Shin Yokoyama

Last Updated :2017/09/01

Affiliations, Positions
Research Institute for Nanodevice and Bio Systems, ., Professor
Web Site
E-mail
yokoyama-shinhiroshima-u.ac.jp

Basic Information

Major Professional Backgrounds

  • 2008/05/01, Hiroshima University, Research Institute for Nanodevice and Bio Systems, Professor
  • 1996/05/11, 2008/04/30, Hiroshima University, Research Center for Nanodevices and Systems, Professor
  • 1994/05/01, 1996/03/31, Hiroshima University, Research Center for Integrated Systems, Professor
  • 1989/11/01, 1994/04/30, Hiroshima University, Research Center for Integrated Systems, Associate Professor
  • 1989/08/16, 1989/10/31, University of Tsukuba, Institute of Materials Science, Associate Professor
  • 1985/10/01, 1989/08/15, University of Tsukuba, Institute of Materials Science, Lecturer
  • 1981/04/01, 1985/09/30, Hiroshima University, Faculty of Engineering, Research Associate

Educational Backgrounds

  • Hiroshima University, Graduate School of Engineering, Department of Materials Engineering, Japan, 1978/04, 1981/03
  • Hiroshima University, Graduate School of Engineering, Department of Electric Engineering, Japan, 1976/04, 1978/03
  • Hiroshima University, Faculty of Engineering, Department of Electronic Engineering, Japan, 1972/04, 1976/03

Academic Degrees

  • Doctor of Engineering, Hiroshima University
  • Master of Engineering, Hiroshima University

Educational Activity

  • Graduate School of Advanced Sciences of Matter:Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter:Semiconductor Electronics and Integration Science

In Charge of Primary Major Programs

  • Electronic Devices and Systems

Research Fields

  • Engineering;Electrical and electronic engineering;Electron device / Electronic equipment

Research Keywords

  • processes
  • LSI
  • elecronic devices
  • ultrasmall devices
  • Optical Intrerconnection
  • biosensor

Affiliated Academic Societies

  • Japan Society of Applied Physics, 1976
  • The Institute of Electronics, Information and Communication Engineers, 1986
  • Japan Association of Aerosol Science and Technology, 1996/.4

Educational Activity

Course in Charge

  1. 2017, Liberal Arts Education Program1, First Semester, technology and human society
  2. 2017, Undergraduate Education, Second Semester, Semiconductor Process Engineering
  3. 2017, Graduate Education (Master's Program) , First Semester, Special Lecture on Advanced Sciences of Matter
  4. 2017, Graduate Education (Master's Program) , First Semester, Introduction of the Electronics
  5. 2017, Graduate Education (Master's Program) , Year, Seminar on Integrated Circuits and Process Engineering
  6. 2017, Graduate Education (Master's Program) , First Semester, LSI Devices and Process Engineering
  7. 2017, Graduate Education (Master's Program) , First Semester, Optoelectronic Systems
  8. 2017, Graduate Education (Master's Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration Science I
  9. 2017, Graduate Education (Master's Program) , Year, Advanced Study in Semiconductor Electronics and Integration Science I
  10. 2017, Graduate Education (Master's Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration Science I
  11. 2017, Graduate Education (Master's Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration Science I
  12. 2017, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration ScienceII
  13. 2017, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration ScienceII
  14. 2017, Graduate Education (Doctoral Program) , Year, Advanced Study in Semiconductor Electronics and Integration ScienceII
  15. 2017, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration ScienceII
  16. 2017, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration ScienceII
  17. 2017, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration ScienceII
  18. 2017, Graduate Education (Doctoral Program) , Intensive, Advanced Study in Semiconductor Electronics and Integration ScienceII

Research Activities

Academic Papers

  1. Temperature Dependence of Resonance Characteristics of Silicon Resonators and Thermal Stability Improvement by Differential Operation Method, Japanese Journal of Applied Physics, 56(4), 04CC06-1-04CC06-5, 2017,4
  2. High-Sensitivity Double-Cavity Silicon Photonic-Crystal Resonator for Label-Free Biosensing, Japanese Journal of Applied Physics, 56(4), 04CM06-1-04CM06-5, 2017, 4
  3. Influence of Surface Smoothing on Spin Seebeck Effect of Ce1Y2Fe5O12 Deposited by Metal Organic Decomposition, Japanese Journal of Applied Pgysics, 56(4), 04CN04-1-04CN04-4, 2017,4
  4. MEMS Optical Switches Using Slot Ring Resonator for Low Voltage Operation, Japanese Journal of Applied Physics, 55(4), 04EC15-1-04EC15-5, 2016, March, 29
  5. Magneto-Optical Switching Devices Based on Si Resonators, Japanese Journal of Applied Physics, 55(4), 04EN02-1-04EN02-6, 2016, March, 22
  6. Blockade and Staircase Phenomena of Holes in Mesoscopic Scale lambda-Deoxyribonucleic Acid (DNA) / SiO2/ Si Structure, IEEE Electron Device Letters, 37(2), 224-227, 2016, January, 6
  7. Detection of antibody-antigen reaction by silicon nitride slot-ring biosensors using protein G, OPTICS COMMUNICATIONS, 365, 16-23, APR 15 2016
  8. Design and characterization of MEMS optical devices using slot-ring resonator for low-voltage operation, JAPANESE JOURNAL OF APPLIED PHYSICS, 55(4), APR 2016
  9. Silicon photonic crystal resonators for label free biosensor, JAPANESE JOURNAL OF APPLIED PHYSICS, 55(4), 04EM11-1-04EM11-5, APR 2016
  10. Differential Si ring resonators for label-free biosensing, JAPANESE JOURNAL OF APPLIED PHYSICS, 55(4), 04EM04-1-04EM04-7, APR 2016
  11. Mechanisms of temperature dependence of threshold voltage in high-k/metal gate transistors with different TiN thicknesses, INTERNATIONAL JOURNAL OF ELECTRONICS, 103(4), 629-647, APR 2 2015
  12. Detection of antibody-antigen reaction by silicon nitride slot-ring biosensors using protein G, Optics Communications, 365, 16-23, 2015, December, 10
  13. Proposal of MEMS Optical Device Using Slot-Ring Resonator with Low-Voltage Operation, 11th Int. Conf. on Group IV Photonics, 69-70, 201408
  14. Differential Si Ring-Resonator Biosensors Robust to Process Variations, 11th Int. Conf. on Group IV Photonics, 213-214, 201408
  15. Study of charge retention mechanism for DNA memory FET, IEICE ELECTRONICS EXPRESS, 11(5), 2014
  16. Improvement of Hump Phenomenon of Thin-Film Transistor by SiNX Film, IEICE TRANSACTIONS ON ELECTRONICS, E97C(11), 1112-1116, NOV 2014
  17. Multi-Slot Stack-Type Ring Resonator for High Sensitivity Biosensor and Low Voltage Optical Modulator, 10th Int. Conf. on Group IV Photonics, 9-10, 201308
  18. Silicon Ring Optical Modulator with p/n Junctions Arranged along Waveguide for Low-Voltage Operation, JAPANESE JOURNAL OF APPLIED PHYSICS, 51(4), APR 2012
  19. Electrical Property of DNA Field-Effect Transistor: Charge Retention Property, JAPANESE JOURNAL OF APPLIED PHYSICS, 51(4), APR 2012
  20. Gating electrical transport through DNA molecules that bridge between silicon nanogaps, NANOSCALE, 4(6), 1975-1977, 2012
  21. Strain imaging of a Cu2S switching device, CURRENT APPLIED PHYSICS, 11(6), 1364-1367, NOV 2011
  22. Sensitivity Improvement of Biosensors Using Si Ring Optical Resonators, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(4), APR 2011
  23. Detection of Antigen-Antibody Reaction Using Si Ring Optical Resonators Functionalized with an Immobilized Antibody-Binding Protein, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(4), APR 2011
  24. A Study of Mach-Zehnder Interferometer Type Optical Modulator Applicable to an Accelerometer, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(4), APR 2011
  25. Design and Simulation of Silicon Ring Optical Modulator with p/n Junctions along Circumference, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(4), APR 2011
  26. Selective Detection of Antigen-Antibody Reaction Using Si Ring Optical Resonators, JAPANESE JOURNAL OF APPLIED PHYSICS, 49(4), 2010
  27. Reduction in Operation Voltage of Silicon Ring Optical Modulator Using High-k (Ba,Sr)TiO3 Cladding Layer, JAPANESE JOURNAL OF APPLIED PHYSICS, 49(4), 2010
  28. Fabrication of Si Nanowire Field-Effect Transistor for Highly Sensitive, Label-Free Biosensing, JAPANESE JOURNAL OF APPLIED PHYSICS, 48(6), JUN 2009
  29. Optical modulator using metal-oxide-semiconductor type Si ring resonator, OPTICAL REVIEW, 16(3), 247-251, MAY 2009
  30. Si Ring Optical Resonators for Integrated On-Chip Biosensing, JAPANESE JOURNAL OF APPLIED PHYSICS, 48(4), APR 2009
  31. Characterization of Ge Photodiodes Fabricated on Vicinal Si Substrate, JAPANESE JOURNAL OF APPLIED PHYSICS, 48(4), APR 2009
  32. Magneto-optic effect in amorphous Bi3Fe5O12 waveguides sputtered at room temperature, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 2915-2920, APR 2008
  33. Photoelastic effect in silicon ring resonators, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 2910-2914, APR 2008
  34. Imprint property of optical Mach-Zehnder interferometers using (Ba,Sr)TiO3 sputter-deposited at 450 degrees C, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 2897-2901, APR 2008
  35. Fabrication of tunneling dielectric thin-film transistor with very thin SiNx films onto source and drain, IEICE ELECTRONICS EXPRESS, 4(14), 442-447, JUL 25 2007
  36. Transient response in monolithic Mach-Zehnder optical modulator using (Ba,Sr)TiO3 film sputtered at low temperature on silicon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(4B), 2462-2466, APR 2007
  37. Compact multimode optical ring resonators for interconnection on silicon chips, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(4B), 2364-2368, APR 2007
  38. Effect of H-2 addition during Cu thin-film sputtering, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(12), 9058-9062, DEC 2006
  39. Optical properties of amorphous Ba0.7Sr0.3TiO3 thin films obtained by metal organic decomposition technique, THIN SOLID FILMS, 515(4), 2326-2331, DEC 5 2006
  40. Fabrication of spin-coated optical waveguides for optically interconnected LSI and influence of fabrication process on underlying metal-oxide-semiconductor capacitors, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(4B), 3498-3503, APR 2006
  41. Design and simulation of ring resonator optical switches using electro-optic materials, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(4B), 3493-3497, APR 2006
  42. Structural and optical properties of electro-optic material: Sputtered (Ba,Sr)TiO3, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(4B), 3488-3492, APR 2006
  43. Groove-buried optical waveguides based on metal organic solution-derived amorphous Ba0.7Sr0.3TiO3 thin films, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(4B), 3482-3487, APR 2006
  44. Monolithically integrated optical modulator based on polycrystalline Ba0.7Sr0.3TiO3 thin films, APPLIED PHYSICS LETTERS, 88(16), APR 17 2006
  45. Fabrication of high-density diamond nanotips by electron beam lithography, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(3A), 1771-1774, MAR 2006
  46. Plasma-based ion implantation sterilization technique and ion energy estimation, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 23(4), 1018-1021, JUL-AUG 2005
  47. Mechanism of anomalous behavior of metal-oxide-semiconductor capacitors contaminated with organic molecules, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(3), 1208-1212, MAR 2005
  48. Evaluation of front-opening unified pod with attached UV/photocatalyst cleaning unit, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(2), 1130-1131, FEB 2005
  49. Carrier mobility in metal-oxide-semiconductor field effect transistor with atomic-layer-deposited Si-nitride gate dielectrics, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 44(28-32), L903-L905, 2005
  50. Contact-hole etching with NH3-added C5F8 pulse-modulated plasma, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(9A), 6476-6480, SEP 2005
  51. Structure and optical band-gap energies of Ba0.5Sr0.5TiO3 thin films fabricated by RF magnetron plasma sputtering, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(12), 8507-8511, DEC 2005
  52. SiO2 hole etching using perfluorocarbon alternative gas with small global greenhouse effect, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(6A), 3586-3589, JUN 2004
  53. Growth and electrical properties of atomic-layer deposited ZrO2/Si-nitride stack gate dielectrics, JOURNAL OF APPLIED PHYSICS, 95(2), 536-542, JAN 15 2004
  54. Particle formation and trapping behavior in a TEOS/O-2 plasma and their effects on contamination of a Si wafer, AEROSOL SCIENCE AND TECHNOLOGY, 38(2), 120-127, FEB 2004
  55. Particle Formation and Trapping Behavior in a TEOS/O2 Plasma and Their Effects on Contamination of a Si Wafer, Aerosol Sci. Techn., 38(2), 120-127, 20040201
  56. Investigation of surface contamination on silicon oxide after hydrofluoric acid etching by noncontact capacitance method, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(12), 7601-7602, DEC 2003
  57. Organic contamination dependence of process-induced interface trap generation in ultrathin oxide metal oxide semiconductor transistors, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42(12A), L1429-L1432, DEC 1 2003
  58. Compact branched optical waveguides using high-index-contrast stacked structure, OPTICAL REVIEW, 10(5), 357-360, SEP-OCT 2003
  59. Evaluation of surface contamination by noncontact capacitance method under UV irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(9A), 5837-5843, SEP 2003
  60. Comparative studies of perfluorocarbon alternative gas plasmas for contact hole etch, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(9A), 5759-5764, SEP 2003
  61. High quality atomic-layer-deposited ultrathin Si-nitride gate dielectrics with low density of interface and bulk traps, APPLIED PHYSICS LETTERS, 83(2), 335-337, JUL 14 2003
  62. Phosphorus-assisted low-energy arsenic implantation technology for N-channel metal-oxide-semiconductor field-effect transistor source/drain formation process, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(5A), 2654-2659, MAY 2003
  63. Carrier mobility in p-MOSFET with atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics, IEEE ELECTRON DEVICE LETTERS, 24(7), 472-474, JUL 2003
  64. Excellent Contact-Hole Etching with NH3 Added C5F8 Pulse-Modulated Plasma, Extend. Abst. of the Int. Conf. on Solid State Devices and Materials, 454-455, 20030901
  65. Compact Branched Optical Waveguides Using High-Index-Contrast Stacked Structure, Optical Review, 10(5), 357-360, 20031001
  66. Evaluation of Surface Contamination by Noncontact Capacitance Method under UV Irradiation, Jpn. J. Appl. Phys., 42(9A), 5837-5843, 20030901
  67. Atomic-layer-deposited silicon-nitride/SiO2 stack - a highly potential gate dielectrics for advanced CMOS technology, MICROELECTRONICS RELIABILITY, 42(12), 1823-1835, DEC 2002
  68. Atomic-layer deposition of ZrO2 with a Si nitride barrier layer, APPLIED PHYSICS LETTERS, 81(15), 2824-2826, OCT 7 2002
  69. High-quality NH3-annealed atomic layer deposited Si-nitride/SiO2 stack gate dielectrics for sub-100 nm technology generations, SOLID-STATE ELECTRONICS, 46(10), 1659-1664, OCT 2002
  70. Influence of organic contaminant on trap generation in thin SiO2 of metal-oxide-semiconductor capacitors, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 41(7A), 4750-4753, JUL 2002
  71. Low-temperature formation of highly reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal-oxide-semiconductor technology, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 20(4), 1406-1409, JUL-AUG 2002
  72. Conduction mechanism of Si single-electron transistor having a one-dimensional regular array of multiple tunnel junctions, APPLIED PHYSICS LETTERS, 81(4), 733-735, JUL 22 2002
  73. Fabrication of Si single-electron transistors having double SiO2 barriers, APPLIED PHYSICS LETTERS, 80(24), 4617-4619, JUN 17 2002
  74. Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal-oxide-semiconductor structures, APPLIED PHYSICS LETTERS, 80(21), 3952-3954, MAY 27 2002
  75. Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires, JOURNAL OF APPLIED PHYSICS, 91(8), 5213-5220, APR 15 2002
  76. Low thermal-budget ultrathin NH3-annealed atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics with excellent reliability, IEEE ELECTRON DEVICE LETTERS, 23(4), 179-181, APR 2002
  77. NH3-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability, APPLIED PHYSICS LETTERS, 80(7), 1252-1254, FEB 18 2002
  78. An Effective Method for Obtaining Interface Trap Distribution in MOS capacitors with Tunneling Gate Oxides, Proceedings 2002 IEEE Int. Conf. on Semiconductor Electronics (ICSE 2002), 402-406, 20021201
  79. A comparative study of bulk and interface trap generation in ultrathin SiO2 and atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics, Forth Int. Symposium on Control of Semiconductor Interface (ISCSI-IV), A6-3-A6-3, 20021001
  80. Atomic-layer deposition of ZrO2 with a Si nitiride barrier layer, 1994 International Conf. on Solid State Devices and Materials, 452-453, 20020901
  81. Time-dependent breakdown of ultrathin SiO2 gate dielectrics under static and dynamic stress, Abst. 2nd ECS Int. Semiconductor Technology Conf., Abstract No.71, 20020901
  82. A novel method for extracting the energy distribution of Si/SiO2 interface traps in ultrathin oxide MOS structures, the Second IEEE Conference on Nanotechnology, 20020801
  83. Atomic-layer-deposition of Si nitride and ZrO2 for gate dielectrics, Abst. AVS Topical Conference on Atomic Layer Deposition (ALD 2002), 6-6, 20020801
  84. Atomic-layer-deposited silicon-nitride/SiO2 stack ---- a highly potential gate dielectrics for advanced CMOS technology, Microelectronics Reliability, 42, 1823-1835, 20021201
  85. Atomic-layer deposition of ZrO2 with a Si nitiride barrier layer, Appl. Phys. Lett=, 81(15), 2824-2826, 20021001
  86. Low-temperature formation of highly-reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal-oxide-semiconductor technology, 20(4), 1406-1409, 20020701
  87. High quality NH3-annealed atomic Layer Deposited Si-nitride/SiO2 Stack Gate Dielectrics for Sub-100nm Technology Generations, Solid State Electron, 46, 1657-1662, 20020401
  88. Conduction mechanism of Si single-electron transistors having an one-dimensional regular array of multiple tunnel junctions, Appl. Phys. Lett=, 81(4), 733-735, 20020701
  89. Fabrication of Si single-electron transistors having double SiO2 barriers, Appl. Phys. Lett=, 80(24), 4617-4619, 20020601
  90. Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal-oxide-semiconductor structures, Appl. Phys. Lett=, 80(21), 3952-3954, 20020501
  91. Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires, J. Appl. Phys., 91(8), 5213-5220, 20020401
  92. Low thermal-budget ultrathin NH3-annealed atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics with excellent reliability, IEEE Electron Device Lett., 23(4), 179-181, 20020401
  93. NH3-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability, Appl. Phys. Lett=, 80(7), 1252-1254, 20020201
  94. Evaluation of Surface Contamination by Noncontact Capacitance Method under UV Irradiation, 1994 International Conf. on Solid State Devices and Materials, 724-725, 20020901
  95. Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires, J. Appl. Phys. Lett., 91(8), 5213-5220, 20020401
  96. Influence of Organic Contaminant on Trap Generation in Thin SiO2 of Metal-Oxide-Semiconductor Capacitors, Jpn. J. Appl. Phys., 41(7A), 4750-4753, 20020701
  97. Soft-breakdown-suppressed ultrathin atomic-layer-deposited silicon-nitride/SiO2 stack gate dielectrics for advanced complementary metal-oxide-semiconductor technology, APPLIED PHYSICS LETTERS, 79(21), 3488-3490, NOV 19 2001
  98. Influence of organic contaminant on breakdown characteristics of MOS capacitors with thin SiO2, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40(4B), 2849-2853, APR 2001
  99. Effect of light irradiation on native oxidation of silicon surface, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40(4A), 2223-2224, APR 2001
  100. Fabrication technologies for Double-SiO2-barrier metal-oxide-semiconductor transistor with a poly-Si dot, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40(3B), 2017-2020, MAR 2001
  101. Characterization of atomic-layer-deposited silicon nitride/SiO2 stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 19(4), 1138-1143, JUL-AUG 2001
  102. Self-limiting atomic-layer deposition of Si on SiO2 by alternate supply of Si2H6 and SiCl4, APPLIED PHYSICS LETTERS, 79(5), 617-619, JUL 30 2001
  103. Low-temperature selective deposition of silicon on silicon nitride by time-modulated disilane flow and formation of silicon narrow wires, APPLIED PHYSICS LETTERS, 79(4), 494-496, JUL 23 2001
  104. Low-temperature formation of silicon nitride gate dielectrics by atomic-layer deposition, APPLIED PHYSICS LETTERS, 79(5), 665-667, JUL 30 2001
  105. Ultrathin NH3 annealed atomic layer deposited Si-nitride/SiO2 stack gate dielectrics with high reliability, 2001 International Semiconductor Device Research Symposium, 26-29, 20011201
  106. Soft breakdown free atomic-layer-deposited silicon-nitride/SiO2 stack gate dielectrics, Technical Digest of the 2001 IEEE International Electron Devices Meeting, 133-136, 20011201
  107. Influence of Organic Contamination on Reliability and Trap Generation in MOS Devices, 1994 International Conf. on Solid State Devices and Materials, 176-177, 20010401
  108. Fabrication technologies for double-SiO2-barrier metal-oxide-semiconductor transistor with a poly-Si dot:, Jpn. J. Appl. Phys., 40(part1,3B), 2017-2020, 20010301
  109. Conduction mechanism in extremely thin poly-Si wires---width dependence of Coulomb blockade effect---, Extend. Abst.2001 Int. Conf. on Solid State Devices and Materials, 438-439, 20010901
  110. Influence of organic contamination on reliability and trap generation in MOS deveices:, 1994 International Conf. on Solid State Devices and Materials, 176-177, 20010901
  111. Low-temperature selective deposition of silicon on silicon nitride by time-modulated disilane flow and formation of silicon narrow wires, Appl. Phys. Lett=, 79(4), 494-496, 20010701
  112. Self-limiting atomic-layer deposition of Si on SiO2 by alternate supply of Si2H6 and SiCl4:, Appl. Phys. Lett=, 79(5), 617-619, 20010701
  113. Low-temperature formation of silicon nitride gate dielectrics by atomic-Layer depositon:, Appl. Phys. Lett=, 79(5), 665-667, 20010701
  114. Characterization of atomic-layer-deposited silicon nitride/SiO2 staked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors, B 19(4), 1138-1143, 20010701
  115. Soft breakdown suppressed ultra-thin atomic-layer-deposited Silicon Nitride/SiO2 stack gate dielectrics for advanced complementary metal-oside-semiconductor technology, Appl. Phys. Lett=, 79(21), 3488-3490, 20011101
  116. Fabrication Technologies for Double-SiO2-Barrier MOS Transistor with a Poly-Si Dot, Jpn. J. Appl. Phys., 40(3B), 2017-2020, 20010301
  117. Stacked Optical Branched Waveguides for Optical Interconnection on Si Chip, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 596-597, 20010401
  118. Influence of Organic Contaminantion on Reliability and Trap Generation in MOS Devices, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 176-177, 20010401
  119. Conduction Mechanism in Extremely Thin Poly-Si Wires ---Width Dependence of Coulomb Blockade Effect---, 1994 International Conf. on Solid State Devices and Materials, 438-439, 20010401
  120. Effect of Light Irradiation on Native Oxidation of Silicon Surface, Jpn. J. Appl. Phys., 40(4A), 2223-2224, 20010401
  121. Influence of Organic Contaminant on Breakdown Characteristics of MOS Capacitors with Thin SiO2, Jpn. J. Appl. Phys., 40(4B), 2849-2853, 20010401
  122. Low-Temperature Selective Deposition of Silicon on Silicon Nitride by Time-Modulated Disilane Flow and Formation of Silicon Narrow Wires, Appl. Phys. Lett=, 79(4), 494-496, 20010701
  123. Self-Limiting Atomic-Layer Deposition of Si on SiO2 by Alternate Supply of Si2H6 and SiCl4, Appl. Phys. Lett=, 79(5), 617-619, 20010401
  124. Optimum atomic spacing for AlAs etching in GaAs epitaxial lift-off technology, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 39(5B), L457-L459, MAY 15 2000
  125. Atomic-layer-deposited silicon-nitride/SiO2 stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors, APPLIED PHYSICS LETTERS, 77(18), 2855-2857, OCT 30 2000
  126. Atomic-layer-deposited silicon-nitride/SiO2 stacked gate dielectriocs for highly reliable p-metal-oxide-semiconductor field-effect transistors, Applied Physics Letters, 77(18), 2855-2857, 20000401
  127. Characterization of atomic-layer-deposited silicon nitride/SiO2 stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors, J. Vac. Sci. Tech. B., 19, 1138-1143, 20001001
  128. Low-temperature selective deposition of silicon by time-modulation exposure of disilane and formation of silicon nanowires, Extend. Abst.2001 Int. Conf. on Solid State Devices and Materials, 202-203, 20000401
  129. Fabrication of novel double-barrier MOS transistors with poly-Si dots, Abst. of Intern. Symp. on Formation= Physics and Device Application of Quantum Dot Structures, 10-10, 20000401
  130. Atomic-layer-deposited silicon nitride/SiO2 stacked gate dielectrics for highly reliable p-MOSFETs, Applied Physics Letters, 77(18), 2855-2857, 20000101
  131. Comparative Studies of PFC alternative Gas Plasmas for Contact Hole Etch, Proc. of 22th Symp. on Dry Process (2000), 199-204, 20001001
  132. Influence of Organic Contaminant on Breakdown Characteristics of MOS Capacitors with Thin SiO2, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 552-553, 20000401
  133. Low-Temperature Selective Deposition of Silicon by Time-Modulation Exposure of Disilane and Formation of Silicon Nanowires, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 202-203, 20000401
  134. Optimum Atomic Spacing for AlAs Etching in GaAs Epitaxial Lift-Off Technology, Jpn. J. Appl. Phys., 39(5B), L457-L459, 20000401
  135. Calculation of electrical properties of novel double-barrier metal oxide semiconductor transistors, Jpn. J. Appl. Phys., 38(part1,1B), 399-402, 19990101
  136. Characterization of silicon/oxide/nitride layers by X-ray photoelectron spectroscopy, Applied Physics Letters, 75(11), 1535-1537, 19990901
  137. Calculation of Electrical Properties of Novel Double-Barrier Metal Oxide Semiconductor Transistor, Jpn. J. Appl. Phys., 38(1B), 399-402, 19990401
  138. Evaluation of 300 mm Wafer Boxes with UV/Photoelectron Cleaning Capability, Proc. Int. Symp. on Semicon. Manuf., 169-172, 19990401
  139. Atomic-Layer Deposition of Silicon Nitride, J. Korean Physical Soc., 35, S71-S75, 19990401
  140. Quantitative evaluation of dopant loss in 5-10 keV As ion implantation for low-resistive, ultrashallow source/drain formation, Jpn. J. Appl. Phys., 38(4B), 2324-2328, 19990401
  141. High-Speed GaAs Epitaxial Lift-Off and Bonding with High Alignment Accuracy Using Sapphire Plate, J. Electrochem. Soc., 146(2), pp.710-712, 19990401
  142. Self-limiting atomic-layer selective deposition of silicon nitride by temperature-controlled method, 1994 International Conf. on Solid State Devices and Materials, 22-23, 19980401
  143. Calculation of electrical properties of novel double-barrier MOS transistors, Abst. of Intern. Symp. on Formation= Physics and Device Application of Quantum Dot Structures, 10-10, 19980401
  144. Threshold voltage fluctuation induced by direct tunnel leakage current through 1.2-2.8nm thick gate oxides for scaled MOSFETs, Tech. Digest IEDM, 919-922, 19981201
  145. Reduction of Gaseous Contamination by UV/Photoelectron Method, IEEE Trans. Semicond. Manuf., 11(1), 9-12, 19980401
  146. An Experimental Pattern Recognition System Using Bidirectional Optical Bus Lines, Jpn. J. Appl. Phys., 37(3B), 1116-1121, 19980401
  147. Effect of UV/Photoelectron and Photocatalyst Cleaning on the Reliability of Thin Gate Oxides, Proc. of the 44th Meeting of the Institute of Environm. Sci. and Tech., 210-214, 19980401
  148. Self-Limiting Atomic-Layer Selective Deposition of Silicon Nitride by Temperature-Controlled Method, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 22-23, 19980401
  149. Design and Fabrication of Optically-Interconnected Kohonen Net for High-Speed Pattern Recognition, Proc. Int. Symp. on Future of Intellectual Integrated Electronics, 453-457, 19980401
  150. Atomic-Layer Selective Deposition of Silicon Nitride on Hydrogen-Terminated Si Surfaces, Applied Surface Science, 130-132, 352-356, 19980401
  151. Dopant loss origins of low energy implanted arsenic and antimony for ultra shallow junction formation, Mat. Res. Soc. Symp. Proc.=, 532, 23-28, 19980401
  152. Quantitative Evaluation of Dopant Loss in Low Energy As Implantation for Low-Resistive, Ultra Shallow Source/Drain Formation, 1994 International Conf. on Solid State Devices and Materials, 18-19, 19980801
  153. Evaluation of Stress Induced Deffects due to Recessed LOCOS Process, Abst. of IUMRS Int. Conf. on Electronic Materials 1998 (IUMRS-ICEM-98), 79, 19980801
  154. New Ar-plasma cleaning process for reduction of Al/TiSi2 contact resistance, Jpn. J. Appl. Phys., 37(11), 5902-5905, 19981101
  155. Threshold voltage fluctuation induced by direct tunnel leakage current through 1.2-2.8 nm thick gate oxides for scaled MOSFETs, Int. Electron Devices Meeting 1998. Technical Digest, 919-922, 19981201
  156. A study of electrical characteristics improvements in sub-0.1 mu m gate length MOSFETs by low temperature operation, IEICE Trans. Electron., E81-C(12), 1913-1917, 19981201
  157. Threshold Voltage Fluctuation Induced by Direct Tunnel Leakage Current through 1.2-2.8 nm Thick Gate Oxides for Scaled MOSFETs, Tech. Digest Int. Electron Devices Meeting, pp. 919--922, 19981201
  158. An Experimental Pattern Recognition System Using Bidirectional Optical Bus Lines, Jap. J. Appl. Phys., 37Part I(3B), 1116-1121, 19980401
  159. Influence of Wafer Material on Defect Generation During Deep Submicron LOCOS Process, 1994 International Conf. on Solid State Devices and Materials, 579-582, 19970801
  160. Atomic Layer Controlled Deposition of Silicon Nitride and In Situ Growth Observation by Infrared Reflection Absorption Spectroscopy, Applied Surface Science, 112, 75-81, 19970401
  161. High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits, Jpn. J. Appl. Phys., 36(3), 1554-1557, 19970401
  162. High-Speed GaAs Epitaxial Lift-Off and Bonding with High Alignment Accuracy using Sapphire Plate, Abst. 191st Electrochem. Soc. Meeting, 2469-2469, 19970401
  163. Reliability Evaluation of Ultrathin Gate Oxides Grown on Si Wafers Stored in Clean Stocker with a UV/Photoelectron Source, Proc. Int. Symp. on Semicon. Manuf., F-5-F-8, 19970401
  164. Atomic-Layer Selective Deposition of Silicon Nitride on Hydrogen-Terminated Si Surfaces, Abst. 4th Int. Symp. on Atomically Controlled Surf. and Interfaces, 314-315, 19970401
  165. Experimental Pattern Recognition System using Bidirectional Optical Bus Lines, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 388-389, 19970401
  166. Heteroepitaxial Layer Overgrowth of GaP on Structured Silicon Surfaces, Abst. 191st Electrochem. Soc. Meeting, 499-499, 19970401
  167. Photo-electronic Crossbar Switching Network for Multiprocessor Systems, Appl. of Photonic Tech. 2= Plenum Press, 505-510, 19970401
  168. High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits, Jpn. J. Appl. Phys., 36(3), pp.1554-1557, 19970401
  169. Photo-Electric Crossbar Switches for Multi-Processor Systems, Applications of Photonics Technology, 505-510, 19970401
  170. Experimental Pattern Recognition System using Bi-directional Optical Bus Lines, 19970901
  171. High-Efficiency Micromirrors and Branched Optical Waveguides on Silicon Chip, Jpn. J. Appl. Phys., 35(2B), 941-945, 19960401
  172. Optically Interconnected Kohonen Net for Pattern Recognition, Jpn. J. Appl. Phys., 35(2B), 1405-1409, 19960401
  173. Control of Fine Particulate and Gaseous Contaminants by UV/Photoelectron Method, IEICE Trans. Electron., E79-C(3), 306-311, 19960401
  174. High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 643-645, 19960401
  175. Reduction of Gaseous Contamination by UV/Photoelectron Method, Proc. Int. Symp. on Semicon. Manuf., 192-195, 19960401
  176. Real-Time Study on Heteroepitaxial GaAs and GaP Growth Processes on Structured Si(100) Substrates, Abst. 1996 Fall meeting of Mat. Rec. Soc., M8.2-M8.2, 19960401
  177. Atomic Layer Controlled Deposition of Silicon Nitride with Self-limiting Mechanism, Applied Physics Letters, 68(23), 3257-3259, 19960401
  178. High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips, JJAP, 35-I(2B), 941-945, 19960201
  179. Optically Interconnected Kohonen Net for Pattern Recognition, JJAP, 35-I(2B), 1405-1409, 19960201
  180. GaAs/Si Optoelectronic Design and Development at Hiroshima University, Semiconductor Characterization, 599-604, 19960401
  181. High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits, 1996 Intern. Conf. on Solid State Devices and Materials (Yokohama= Aug. 26-29= 1996), pp. 643-645, 19960801
  182. Optically Interconnected Kohonen Net for Pattern Recognition, Jpn. J. Appl. Phys., 35(2B), pp.1405-1409, 19960401
  183. High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips, Jpn. J. Appl. Phys., 35(2B), pp.941-945, 19960401
  184. Fine Particulate Contaminant Control by UV/Photoelectron Method under Low Pressure Condition, Rev. Scientific Inst., 66(11), 5348-5351, 19951101
  185. Optically Interconnected Kohonen Net for Pattern Recognition, 1994 International Conf. on Solid State Devices and Materials, 1075-1076, 19950401
  186. Optical Interconnection on Silicon LSI Chips, Proceedings of Photonics West, 2400, 89-93, 19950401
  187. GaAs/Si Optoelectronic Design and Development at Hiroshima University, International Workshop: Semiconductor Characterization, 1-5, 19950401
  188. Fabrication and Evaluation of Three Dimensional Optically Coupled Common Memory, Jpn. J. Appl. Phys., 34(2B), 1246-1248, 19950201
  189. Optical Interconnection on Silicon LSI Chips, Proc. Photonics West, 2400, 89-93, 19950401
  190. Test Chip Fabrication of 3D Optically Coupled Common Memory for Parallel Processing System, Proc. Photonics West, 2400, 8-15, 19950401
  191. GaAs/Si Optoelectronic Design and Development at Hiroshima Universit, Proc. Intern. Workshop of Semicon. Character.(Gaithersburg= USA), 599-604, 19950401
  192. Fabrication and Evaluation of Three-Dimensional Optically-Coupled Common Memory, Jpn. J. Appl. Phys., 34(2B), 1246-1248, 19950401
  193. Single-Chip Integration of Light-Emitting Diode, Waveguide and Micromirrors, Jpn. J. Appl. Phys., 34(2B), 1282-1285, 19950401
  194. High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 830-832, 19950401
  195. Optically Interconnected Kohonen Net for Pattern Recognition, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 1075-1076, 19950401
  196. Valence Band Alignment of Ultra-Thin SiO2/Si Interfaces as Determined by High Resolution X-Ray Photoelectron Spectroscopy, Mat. Res. Soc. Symp. Proc.=, 386, 249-254, 19950401
  197. Valence Band Alignment at Ultra-Thin SiO2/Si(100) Interfaces Determined by High-Resolution X-Ray Photoelectron Spectroscopy, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 28-30, 19950401
  198. Control of Fine Particulate and Gaseous Contaminants by UV/Photoelectron Method, Proc. Int. Symp. on Semicon. Manuf., 60-63, 19950401
  199. Optical Waveguides on Si Chip, J. Vac. Sci. Technol. A, 13(3), 629-635, 19950401
  200. Determination of Valence Band Alignment at Ultra-Thin SiO2/Si Interfaces by H, Jpn. J. Appl. Phys., 34(6A), L653-L656, 19950401
  201. Fine Particulate Contaminant Control by the UV/Photoelectron Method under a Low Pressure Condition, Review of Scientific Instruments, 66(11), 5348-5351, 19950401
  202. Optical Interconection on Silicon LSI Chips, 19950401
  203. High-Efficiecy Micromirrors and Branched Optical Waveguides on Si Chips, 830, 19950901
  204. Optically Interconnected Kohonen Net for Pattern Recognition, 1995 Intern. Conf. on Solid State Devices and Materials (Osaka, Aug. 21-24, 1995), pp. 1075-1076, 19950801
  205. High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips, 1994 International Conf. on Solid State Devices and Materials, pp. 830-832, 19950801
  206. Single-Chip Integration of Light-Emitting Diode, Waveguide and Micormirrors, Jpn. J. Appl. Phys., 34(2B), pp.1282-1285, 19950401
  207. Micron-Size Optical Waveguide for Optoelectronic Integrated Circuits, Jpn. J. Appl. Phys., 33(1B), 822-826, 19940401
  208. New RAM-Bus Memory System with Interchip Optical Interconnection, Jpn. J. Appl. Phys., 33(1B), 848-851, 19940401
  209. Fundamental Characteristics of Optically Coupled Three-Dimensional Common Memory, Optoelectronics Devices and Technologies, 9(1), 119-130, 19940401
  210. He Ion Beam Induced Arsenic Atom Displacement Studied by Medium-Energy Ion Spectroscopy, Mat. Res. Soc. Symp. Proc.=, 316, 123-128, 19940401
  211. The Performance Study of Ion Implanter Based Medium Energy Ion Spectroscopy with Solid State Detector, Mat. Res. Soc. Symp. Proc.=, 324, 409-414, 19940401
  212. Single Chip Integration of LED, Waveguide and Micromirrors, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 90-92, 19940401
  213. Fabrication and Evaluation of Three-Dimensional Optically-Coupled Common Memory, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 965-966, 19940401
  214. Evaluation of Plasma-Induced Damage by Medium Energy Ion Scattering, Jpn. J. Appl. Phys., 33(4B), 2179-2183, 19940401
  215. Implanted Antimony Precipitation in Silicon Studied by Medium-Energy Ion Scattering, Jpn. J. Appl. Phys., 33(12B), L1799-L1802, 19940401
  216. Single Chip Integration of LED, Waveguide and Micormirrors, 1994 Intern. Conf. on Solid State Devices and Materials (Yokohama= Aug. 23-26= 1994), pp. 90-92, 19940801
  217. Fabrication and Evaluation of Three-Dimensional Optically-Coupled Common Memory, 1994 International Conf. on Solid State Devices and Materials, 965-966, 19940801
  218. Helium Ion Beam Induced Arsenic Atom Displacement Studied by Medium-Energy Ion Spectroscopy, Mat. Res. Soc. Symp. Proc.=, 316, 123, 19940401
  219. Influence of Sputtering Geometry on Crystallinity of Al(110) Thin Films on Offset (100)Si, Jpn. J. Appl. Phys., 32(2B), L283-L286, 19930401
  220. Medium Energy Ion Spectroscopy of Very Thin As Implanted Layer in Si, Digest of Papers of 6th Intern. MicroProcess Conf., 194-195, 19930401
  221. Effect of Hydrogen and Bias on Single-Crystal Al Growth on Vicinal Si by DC Magnetron Sputtering, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 546-548, 19930401
  222. Medium Energy Ion Spectroscopy of Ultra-Thin As+ Implanted Layers: The Effect of Reversible Site Change of As Atoms, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 582-584, 19930401
  223. Micron-Size Optical Waveguide for Optoelectronic Integrated Circuits, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 1047-1049, 19930401
  224. New RAM-Bus Memory System with Interchip Optical Interconnection, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 673-675, 19930401
  225. Evaluation of Plasma-Induced Damage by Medium Energy Ion Scattering, Porc. of 15th Symp. on Dry Process, 73-78, 19930401
  226. Medium-Energy Ion Spectroscopy Using Ion Implanter, Jpn. J. Appl. Phys., 32(7A), L962-L965, 19930401
  227. 3 V Operation of 70 nm Gate Length MOSFET with New Double Punchthrough Stopper Structure, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 490-492, 19920401
  228. Parallel Data Inspection Operation in Three Dimensional Content Addressable Memory with Optical Interconnection, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 592-594, 19920401
  229. Parallel Data Inspection Operation in Three-Dimensional Content Addressable Memory with Optical Interconnection, 1992 Intern. Conf. on Solid State Devices and Materials (Tsukuba= Aug. 26-28= 1992), pp. 592-594, 19920801
  230. Atomic Layer Growth of Bi-Sr-Ca-Cu-O by Molecular Beam Epitaxy Using Ozone under UV Irradiation, Jpn. J. Appl. Phys., 30(1B), L106-L109, 19910401
  231. Design of Optically Coupled Three Dimensional Content Addressable Memory, Jpn. J. Appl. Phys., 30(3A), L338-L341, 19910401
  232. Single Crystal Growth of Al(110) on Si(100) by Ultra-High-Vacuum Sputtering System, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 757-758, 19910401
  233. Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Superconducting Films by Molecular Beam Epitaxy, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 435-437, 19910401
  234. A Novel Fabrication Technology for Optically Interconnected Three Dimensional LSI by Wafer Aligning and Bonding Technique, Int. Semicon. Device Research Symposium, 327-330, 19910401
  235. Single-Crystal Growth of Al(110) on Vicinal Si(100) in Ultra-High-Vacuum Sputtering System, Jpn. J. Appl. Phys., 30(12B), 3685-3690, 19910401
  236. Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Superconducting Films by Molecular Beam Epitaxy, Jpn. J. Appl. Phys., 30(12B), 3900-3903, 19910401
  237. Coupled Monte Carlo-Energy Relaxation Analysis of Hot-Carrier Light Emission in Metal Oxide Semiconductor Field Effect Transistors, Jpn. J. Appl. Phys., 30(12B), 3666-3670, 19910401
  238. Chemical Bonding Features of Fluorine and Boron in BF2+-Ion-Implanted Si, Extend. Abst. of Conf. on Solid State Devices and Materials, 421-424, 19900401
  239. Design of Optically Coupled Three Dimensional Content Addressable Memory, Extend. Abst. of Conf. on Solid State Devices and Materials, 765-768, 19900401
  240. Atomic Layer Growth of Bi-Sr-Ca-Cu-O by Molecular Beam Epitaxy Using Ozone under UV Irradiation, Extend. Abst. of Conf. on Solid State Devices and Materials, 929-932, 19900401
  241. Two-Dimensional Device Simulation for Poly-Silicon Thin Film Transistor, 1994 International Conf. on Solid State Devices and Materials, 1003-1006, 19900401
  242. Two-Dimensional Device Simulation for Avalanche Induced Short Channel Effect in Poly-Si TFT, Tech. Digest Int. Electron Devices Meeting, 859-862, 19900401
  243. Chemical Bonding Features of Fluorine and Boron in BF2+-Ion-Implanted Si)., Jpn. J. Appl. Phys., 29(12), L2349-L2352, 19900401
  244. Two-Dimensional Device Simulation for Poly-Silicon Thin Film Transistor, Jpn. J. Appl. Phys., 29(12), L2388-L2391, 19900401
  245. Chemical Bonding Features of Fluorine and Boron in BF2+-Ion-Implanted Si, Jpn. J. Appl. Phys., 29, pp.L2349-L2352, 19900401
  246. Chemical Bonding Features of Fluorine in BF2+ implanted Si, the 3rd Symp. on Ion Sources and Ion-Assisted Technology: Special Seminar (Tokyo= June 4-6= 1990), pp. 187 - 194, 19900601
  247. The Chemical Bonding Features of Fluorine and Boron in BF2+ Ion Implanted Si, the 22nd Conf. on Solid State Devices and Materials (Sendai= Aug. 22-24= 1990), pp. 421 - 424, 19900801
  248. Low-Temperature Selective Growth of GaAs by Alternately Supplying Molecular Beam Epitaxy, J. Cryst. Growth, 95(1-4), 32-34, 19890401
  249. Lateral Control of Impurity-Induced Disordering of AlAs/GaAs Superlattice, Nuclear Instr. and Methods in Phys. Research, B39(1-4), 441-444, 19890401
  250. Antiphase Defect Reduction Mechanism in MBE Grown GaAs on Si, Mat. Res. Soc. Symp. Proc.=, 116, 261-263, 19890401
  251. Anisotropic Lateral Growth of GaAs in Molecular Beam Epitaxy, Proc. 16th Int. Symp. on GaAs and Related Compounds, 147-152, 19890401
  252. Solid-Phase Epitaxy of Molecular Beam Deposited Amorphous GaAs on Si, Appl. Phys. Lett=, 54(25), 2562-2564, 19890401
  253. Atomic-Layer Deposition of Silicon Nitride, Abst. of IUMRS Int. Conf. on Electronic Materials, 78-78, 19880401
  254. Low Temperature Growth of GaAs on Si by Migration Enhanced Molecular Beam Epitaxy, Extend. Abst. of Conf. on Solid State Devices and Materials, 147-150, 19870401
  255. Solid-Phase Crystal Growth of Molecular-Beam-Deposited Amorphous GaAs, J. Appl. Phys., 62(5), 1808-1814, 19870401
  256. Preparation of Y-Ba-Cu-O Thin Films by RF-Magnetron Sputtering, Jpn. J. Appl. Phys., 26(9), L1484-L1486, 19870401
  257. A New Method of Measuring Internal Stress in Thin Films Deposited on Silicon by Raman Spectroscopy, Jpn. J. Appl. Phys., 24(1), 866-867, 19850401
  258. Laser-Assisted Chemical Vapor Deposition of Stoichiometric Boron Nitrid, Extend. Abst. of Conf. on Solid State Devices and Materials, 169-172, 19850401
  259. Anisotropic Etching of SiO2 by Excimer Laser Irradiation, Porc. of Dry Process Symp., 39-43, 19850401
  260. Laser-Induced Photochemical Etching of GaAs and Its Characterization by X-Ray Photoelectron Spectroscopy and Luminescence, Proc. 16th Int. Symp. on GaAs and Related Compounds, 325-330, 19850401
  261. Laser-Induced Photochemical Etching of SiO2 Studied by X-Ray Photoelectron Spectroscopy, Appl. Phys. Lett=, 47(4), 389-391, 19850401
  262. Characterization of Photochemical Processing, J Vac Sci Technol B, 3(5), 1445-1449, 19850401
  263. Dependence of Interface State Density on the Atomic Roughness at the Si/SiO2 Interface, Surf. Sci., 142(1-3), 545-555, 19840401
  264. Laser-Induced Chemical Dry Etching of SiO2, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 451-454, 19840401
  265. Granular Si-Rich Oxide and Si-Rich Nitride Films Deposited by Plasma CVD, Porc. of Dry Process Symp., 35-40, 19830401
  266. Characterization of Plasma-Enhanced Chemically-Vapor-Deposited Silicon-Rich Silicon Dioxide/Thermal Silicon Dioxide Dual Dielectric System, J. Appl. Phys., 54(12), 7058-7065, 19830401
  267. Interface Barrier Heights in Metal-Aluminum Nitride-Silicon Structure by Internal Photoemission, J. Appl. Phys., 53(5), 3694-3697, 19820401
  268. Internal Photoemission in the Anodic Oxide/GaAs Interface, Appl. Phys. Lett=, 38(2), 97-99, 19810401
  269. Electron Spin Resonance in Discharge-Produced Silicon Nitride, Jpn. J. Appl. Phys., 20(1), L35-L37, 19810401
  270. Optical Emission Spectroscopy of the SiH4-NH3-H2 Plasma During the Growth of Silicon Nitride, Jpn. J. Appl. Phys., 20(2), L117-L120, 19810401
  271. Characterization of Plasma Deposited SiN Films, Proc. of Symp. on Plasma Processing, 13-25, 19810401
  272. Characterization of Plasma-Deposited Silicon Nitride Films, J. Appl. Phys., 51(10), 5470-5474, 19800401
  273. GaAs MOS Structures with Al2O3 Grown by Molecular Beam Reaction under UV Excitation, Thin Solid Films, 56(1-2), 81-88, 19790401
  274. GaAs MOS Structures with Al2O3 Grown by Molecular Beam Reaction, Surface Science, 86(8), 835-840, 19790401
  275. Surface States in GaAs Tunnel MIS Structures, Phys. Stat. Sol. (a), 42(2), 483-488, 19770401

Publications such as books

  1. 2002/06, Bipolar Voltage Pulse Induced Current - A Means for Reliable Extraction of Interface Trap Distribution in Ultrathin Oxides MOS Structure , 2002, 06, 6

Invited Lecture, Oral Presentation, Poster Presentation

  1. Integrated Differential Si-Ring Resonator Biosensors for Selective Detection of Antigen-Antibody Reaction, Shin Yokoyama, Tomoya Taniguchi, Takeshi Ikeda, and Akio Kuroda, OPTICS & PHOTONICS International Congress 2016, 2016/05/17, With Invitation, Yokohama City, Japan
  2. Integrated Optical Biosensors, Shin Yokoyama, Tomoya Taniguchi, Takeshi Ikeda, and Akio Kuroda, 2015/06/09, With Invitation, Tokyo University of Science, Introduction about Si ring resonator biosensor., 講演予稿集
  3. Si Ring Resonator and Photonic Crystal Resonator Biosensors, Shin Yokoyama, Takeshi Ikeda, Akio Kuroda, Third International Symposium on Semiconductor Materials and Devices, 2015/02/04, Without Invitation, Anna University, India, Anna University, Chennai, India, Biosensors using Si Ring Resonator and Photonic Crystal Resonator are introduced.
  4. Introduction of Research at Research Institute for Nanodevice and Bio Systems, Shin Yokoyama, Anri Nakajima, Shinnichiro Kuroki, 2015/01/24, With Invitation, Hiroshima University Higashihiroshima campus, Introduction of Research concering Materials Science at Research Institute for Nanodevice and Bio Systems
  5. Si Ring Resonator and Photonic Crystal Resonator Biosensors, Shin Yokoyama, Takeshi Ikeda, Akio Kuroda, Techinical Meeting on Silicon Photonics, 2015/01/22, With Invitation, The Institute of Electronics, Information and Communication Engineers, Higashihiroshima City, Introduction of Si ring and photonic crystal resonator biosensors
  6. Optical Switches and Biosensors using Silicon Photonics, Shin Yokoyama, Yoshiteru Amemiya, Tetsuo Tabei, Takeshi Ikeda, and Akio Kuroda, The Japan Society od Applied Physics, Autum Meeting, 2014/09/20, With Invitation, The Japan Society od Applied Physics, Hokkaido University, Introduction about biosensors and optical switches using Si photonics
  7. Integrated Optical-Resonator Biosensors Using Silicon Photonics, Shin Yokoyama, Takeshi ikeda, Akio Kuroda, 2014 IEICE General Conference, 2014/03/18, With Invitation, The Institute of Electronics, Information and Communication Engineers, Niigata University, Japan, Introduction of Si ring biosensors, 予稿集
  8. Introduction of Bio Related Studies at Research Institute for Nanodevice and Bio Systems, Hiroshima University, Shin Yokoyama, T. Kikkawa, A. Nakajima, T. Koide, The 11th Symposium on Plasmonics, 2014/01/24, With Invitation, Plasmonics Research Group, Hiroshima University, Higashihiroshima Campus, interoduction of Bio Related Studies are introduced.
  9. Biosensors using silicon photonics, Shin Yokoyama, The society of photonic devices and application technologies, 2013/10/09, With Invitation, OPTOELECTRONICS INDUSTRY AND TECHNOLOGY DEVELOPMENT ASSOCIATION, Sophia University, Introduction of biosensors using silicon photonicc
  10. Biosensors using Si ring optical resonators, Shin Yokoyama, T. Ikeda, A. Kuroda, 2011 IEICE General Conference, 2011/03/14, With Invitation, The Institute of Electronics, Information and Communication Engineers, Tokyo City University, Presentation concerning Si ring resonator biosensors, 予稿集
  11. Silicon Nanodevices and Their Bio Application, Shin Yokoyama, T. Kikkawa, A. Nakajima, The 7th nano Bio Chemistry Symposium, Hirhoshima University, 2010/12/04, With Invitation, Hiroshima University, Hiroshima University, Higashihiroshima Campus, Presentation Concerning Silicon Nanodevices and Their Bio Application, 予稿集
  12. Problems of on-chip interconnection and optical interconnection, Shin Yokoyama, Yoshiteru Amemiya, 2010/11/29, With Invitation, The Institute of Electronics, information and Communication Engineers, Kyushu University, The problems of current LSI with metal interconnection are pointed out, i.e., increasing signal delay and power dissipation of global metal interconnection. Some of possible solutions, transmission line, standing-wave signal distribution method and optical interconnection are explained., 信学技法IEICE Technical Report CPM2010-128, ICD2010-87(2010-11). pp. 25-30.
  13. On-Chip Optical Interconnection, Shin Yokoyama, 2009 IEICE General Conference, 2009/03/19, With Invitation, The Institute of Electronics, Information and Communication Engineers, Ehime University, On-chip optical interconnection using Si ring resonators are introduced., 信学技報
  14. Atomic-Layer Deposition of Silicon Nitride, Shin Yokoyama, "IUMRS Int. Conf. on Electronic Materials 1998 (IUMRS-ICEM-98) (Cheju, Korea)", 1998/08, With Invitation, Cheju, Korea
  15. Optical Waveguides on Si Chips, Shin Yokoyama, 1995/10, With Invitation, Denver, Colorado
  16. Three-Dimensional and Two-Dimensional Optical Interconnections in Si LSI, Shin Yokoyama, 1995/09, With Invitation, Porvoo, Finland
  17. GaAs/Si Optoelectronic Design and Development at Hiroshima University, Shin Yokoyama, 1995/01, With Invitation, Gaithersburg, USA

Patented

  1. Patent, JP4215812, 2008/11/14
  2. Patent, JP4227667, 2008/12/05
  3. Patent, JP4315247, 2009/05/29
  4. Patent, JP4392051, 2009/10/16
  5. Patent, JP4392052, 2009/10/16
  6. Patent, JP4427589, 2009/12/18
  7. Patent, JP4445556, 2010/01/22
  8. Patent, US:7720389, 2010/05/18
  9. Patent, JP4596451, 2010/10/01
  10. Patent, US:7847225, 2010/12/07
  11. Patent, US:7907847, 2011/03/15
  12. Patent, US:8044382, 2011/10/25
  13. Patent, US:8330141, 2012/12/11
  14. Patent, US:8368046, 2013/02/05
  15. Patent, US:8470693, 2013/06/25
  16. Patent, JP5480512, 2014/02/21
  17. Patent, 台湾JP発明第153080号
  18. Patent, 8980658, 2015/03/17