Shin Yokoyama

Last Updated :2017/11/01

Affiliations, Positions
Research Institute for Nanodevice and Bio Systems, ., Professor
Web Site
E-mail
yokoyama-shinhiroshima-u.ac.jp

Basic Information

Major Professional Backgrounds

  • 2008/05/01, Hiroshima University, Research Institute for Nanodevice and Bio Systems, Professor
  • 1996/05/11, 2008/04/30, Hiroshima University, Research Center for Nanodevices and Systems, Professor
  • 1994/05/01, 1996/03/31, Hiroshima University, Research Center for Integrated Systems, Professor
  • 1989/11/01, 1994/04/30, Hiroshima University, Research Center for Integrated Systems, Associate Professor
  • 1989/08/16, 1989/10/31, University of Tsukuba, Institute of Materials Science, Associate Professor
  • 1985/10/01, 1989/08/15, University of Tsukuba, Institute of Materials Science, Lecturer
  • 1981/04/01, 1985/09/30, Hiroshima University, Faculty of Engineering, Research Associate

Educational Backgrounds

  • Hiroshima University, Graduate School of Engineering, Department of Materials Engineering, Japan, 1978/04, 1981/03
  • Hiroshima University, Graduate School of Engineering, Department of Electric Engineering, Japan, 1976/04, 1978/03
  • Hiroshima University, Faculty of Engineering, Department of Electronic Engineering, Japan, 1972/04, 1976/03

Academic Degrees

  • Doctor of Engineering, Hiroshima University
  • Master of Engineering, Hiroshima University

Educational Activity

  • Graduate School of Advanced Sciences of Matter:Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter:Semiconductor Electronics and Integration Science

In Charge of Primary Major Programs

  • Electronic Devices and Systems

Research Fields

  • Engineering;Electrical and electronic engineering;Electron device / Electronic equipment

Research Keywords

  • Semiconductor Engineering
  • LSI
  • elecronic devices
  • ultrasmall devices
  • Optical Intrerconnection
  • biosensor

Affiliated Academic Societies

  • Japan Society of Applied Physics, 1976
  • The Institute of Electronics, Information and Communication Engineers, 1986
  • Japan Association of Aerosol Science and Technology, 1996/.4

Educational Activity

Course in Charge

  1. 2017, Liberal Arts Education Program1, First Semester, technology and human society
  2. 2017, Undergraduate Education, Second Semester, Semiconductor Process Engineering
  3. 2017, Graduate Education (Master's Program) , First Semester, Special Lecture on Advanced Sciences of Matter
  4. 2017, Graduate Education (Master's Program) , First Semester, Introduction of the Electronics
  5. 2017, Graduate Education (Master's Program) , Year, Seminar on Integrated Circuits and Process Engineering
  6. 2017, Graduate Education (Master's Program) , First Semester, LSI Devices and Process Engineering
  7. 2017, Graduate Education (Master's Program) , First Semester, Optoelectronic Systems
  8. 2017, Graduate Education (Master's Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration Science I
  9. 2017, Graduate Education (Master's Program) , Year, Advanced Study in Semiconductor Electronics and Integration Science I
  10. 2017, Graduate Education (Master's Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration Science I
  11. 2017, Graduate Education (Master's Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration Science I
  12. 2017, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration ScienceII
  13. 2017, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration ScienceII
  14. 2017, Graduate Education (Doctoral Program) , Year, Advanced Study in Semiconductor Electronics and Integration ScienceII
  15. 2017, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration ScienceII
  16. 2017, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration ScienceII
  17. 2017, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration ScienceII
  18. 2017, Graduate Education (Doctoral Program) , Intensive, Advanced Study in Semiconductor Electronics and Integration ScienceII

Research Activities

Academic Papers

  1. Detection of prostate specific antigen using silicon photonic crystal nanocavity resonator, IEEE SPIE Photonics West Proceedings Volume 10111: Quantum Sensing and Nano Electronics and Photonics XIV March 2017. doi:10.1117/12.2251604, Jan 28-Feb.2, 2017, San Francisco, 2017,3
  2. Characteristics of stacked multi-slot ring resonator sensors, Sensor Review, 37(3), 357-363, 2017,7
  3. Temperature Dependence of Resonance Characteristics of Silicon Resonators and Thermal Stability Improvement by Differential Operation Method, Japanese Journal of Applied Physics, 56(4), 04CC06-1-04CC06-5, 2017,4
  4. High-Sensitivity Double-Cavity Silicon Photonic-Crystal Resonator for Label-Free Biosensing, Japanese Journal of Applied Physics, 56(4), 04CM06-1-04CM06-5, 2017, 4
  5. Influence of Surface Smoothing on Spin Seebeck Effect of Ce1Y2Fe5O12 Deposited by Metal Organic Decomposition, Japanese Journal of Applied Pgysics, 56(4), 04CN04-1-04CN04-4, 2017,4
  6. Silicon Photonic Biosensors with MEMS Flow Control, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2017), 367-368, 2017,9
  7. Label Free Detection of Prostate Specific Antigen Using Photonic Crystal Nanocavity Resonator, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2017), 287-288, 2017,9
  8. Optical Waveguides with Memory Effect Using Photochromic Material for Neural Network, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2017), 97-98, 2017,9
  9. Anomalous Nernst Effect of Ni-Al Alloys and Application to Spin Seebeck Devices, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2017), 991-992, 2017,9
  10. Spin Seebeck Devices Using CexY3-xFe5O12 Deposited by Metal Organic Decomposition -Influence of Composition and Long Time Annealing Effect, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2017), 999-1000, 2017,9
  11. MEMS Optical Switches Using Slot Ring Resonator for Low Voltage Operation, Japanese Journal of Applied Physics, 55(4), 04EC15-1-04EC15-5, 2016, March, 29
  12. Magneto-Optical Switching Devices Based on Si Resonators, Japanese Journal of Applied Physics, 55(4), 04EN02-1-04EN02-6, 2016, March, 22
  13. Blockade and Staircase Phenomena of Holes in Mesoscopic Scale lambda-Deoxyribonucleic Acid (DNA) / SiO2/ Si Structure, IEEE Electron Device Letters, 37(2), 224-227, 2016, January, 6
  14. Detection of antibody-antigen reaction by silicon nitride slot-ring biosensors using protein G, OPTICS COMMUNICATIONS, 365, 16-23, APR 15 2016
  15. Design and characterization of MEMS optical devices using slot-ring resonator for low-voltage operation, JAPANESE JOURNAL OF APPLIED PHYSICS, 55(4), 2016,4
  16. Silicon photonic crystal resonators for label free biosensor, JAPANESE JOURNAL OF APPLIED PHYSICS, 55(4), 04EM11-1-04EM11-5, 2016,4
  17. Differential Si ring resonators for label-free biosensing, JAPANESE JOURNAL OF APPLIED PHYSICS, 55(4), 04EM04-1-04EM04-7, 2016,4
  18. Influence of Surface Smoothing on Spin Seebeck Effect of Ce1Y2Fe5O12 Deposited by Metal Organic Decomposition, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2016), 933-934, 2016,9
  19. Thermal Change in Resonance Wavelength of Si Resonator Sensors on Si on Insulator Substrate and Solution by Differential Operation, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2016), 487-488, 2016,9
  20. High Sensitivity and High Quality-Factor Silicon Photonic Crystal Resonator with Double Nanocavities for Label Free Biosensing, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2016), 361-362, 2016,9
  21. Mechanisms of temperature dependence of threshold voltage in high-k/metal gate transistors with different TiN thicknesses, INTERNATIONAL JOURNAL OF ELECTRONICS, 103(4), 629-647, APR 2 2015
  22. Detection of antibody-antigen reaction by silicon nitride slot-ring biosensors using protein G, Optics Communications, 365, 16-23, 2015, December, 10
  23. Mesoscopic Blockade and Staircase Phenomena of Holes in DNA/Si-MOSFET by Gate Voltage Modulation, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2015), 334-335, 2015,9
  24. High Sensitive Biosensor using Si Photonic Crystal Cavity Resonators, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2015), 380-381, 2015,9
  25. Biosensing by Differential Si Ring Resonators Robust to Process Variations, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2015), 840-841, 2015,9
  26. MEMS Optical Switches Using Slot Ring Resonator for Low Voltage Operation, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2015), 598-599, 2015,9
  27. Magneto-Optical Switching Devices Based on Si Photonic Resonators, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2015), 580-581, 2015,9
  28. Proposal of MEMS Optical Device Using Slot-Ring Resonator with Low-Voltage Operation, 11th Int. Conf. on Group IV Photonics, 69-70, 201408
  29. Differential Si Ring-Resonator Biosensors Robust to Process Variations, 11th Int. Conf. on Group IV Photonics, 213-214, 201408
  30. Study of charge retention mechanism for DNA memory FET, IEICE ELECTRONICS EXPRESS, 11(5), 2014
  31. Improvement of Hump Phenomenon of Thin-Film Transistor by SiNX Film, IEICE TRANSACTIONS ON ELECTRONICS, E97C(11), 1112-1116, 2014,11
  32. Multi-Slot Stack-Type Ring Resonator for High Sensitivity Biosensor and Low Voltage Optical Modulator, 10th Int. Conf. on Group IV Photonics, 9-10, 201308
  33. Fabrication and Evaluation of Differential Si Ring Optical Resonator for Biosensors, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2013), 826-827, 2013,9
  34. Mach-Zehnder Interferometer Optical Modulator with Cascade P/N Junctions, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2013), 1004-1005, 2013,9
  35. Optical Modulation Based on Surface Plasmon Resonance Using Metal-Insulator-Semiconductor Structure, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2013), 1008-1009, 2013,9
  36. Silicon Ring Optical Modulator with p/n Junctions Arranged along Waveguide for Low-Voltage Operation, JAPANESE JOURNAL OF APPLIED PHYSICS, 51(4), 2012,4
  37. Electrical Property of DNA Field-Effect Transistor: Charge Retention Property, JAPANESE JOURNAL OF APPLIED PHYSICS, 51(4), 2012,4
  38. Gating electrical transport through DNA molecules that bridge between silicon nanogaps, NANOSCALE, 4(6), 1975-1977, 2012
  39. High Sensitive Biosensores with Slot and Stack-Type Structure using Silicon Nitride Waveguides, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2012), 362-363, 2012,9
  40. Differential Si Ring Optical Resonator Biosensors, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2012), 1097-1098, 2012,9
  41. Strain imaging of a Cu2S switching device, CURRENT APPLIED PHYSICS, 11(6), 1364-1367, 2011,11
  42. Sensitivity Improvement of Biosensors Using Si Ring Optical Resonators, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(4), 2011,4
  43. Detection of Antigen-Antibody Reaction Using Si Ring Optical Resonators Functionalized with an Immobilized Antibody-Binding Protein, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(4), 2011,4
  44. A Study of Mach-Zehnder Interferometer Type Optical Modulator Applicable to an Accelerometer, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(4), 2011,4
  45. Design and Simulation of Silicon Ring Optical Modulator with p/n Junctions along Circumference, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(4), 2011,4
  46. Electrical Property of DNA FET -Charge Retention Property-, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2011), 134-135, 2011,9
  47. Acceleration Sensor Based on CMOS Inverter Having Force Balanced Movable Gate Electrode, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2011), 420-421, 2011,9
  48. Band-to-Band Tunneling Transistor for Application to Bio Sensor, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2011), 410-411, 2011,9
  49. Low-operation Voltage and High-speed Silicon Ring Optical Modulator with p/n Junctions along Waveguide, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2011), 817-818, 2011,9
  50. Reduction of Hydrogen Annealing Temperature for Shape Transformation of Si Surface by Very Short Water Rinse, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2011), 260-261, 2011,9
  51. Selective Detection of Antigen-Antibody Reaction Using Si Ring Optical Resonators, JAPANESE JOURNAL OF APPLIED PHYSICS, 49(4), 2010
  52. Reduction in Operation Voltage of Silicon Ring Optical Modulator Using High-k (Ba,Sr)TiO3 Cladding Layer, JAPANESE JOURNAL OF APPLIED PHYSICS, 49(4), 2010
  53. Electrical Characterisation of Tunneling-Dielectric TFT at Low Temperatures, Abst. 9th Int. Workshop on Low Temperature Electronics (WOLTE-9) (Sao Pauro, June, 2010), 67-74, 2010,6
  54. Electrical Characteristic in the Low and High Temperatures for Tunneling-Dielectric TFT, Abst. 2010 Int. Meeting for Future of Electron Devices, Kansai, (IMFEDK2010) (Osaka, May, 2010), 78-79, 2010,5
  55. Development of Accelerometer Using Mach-Zehnder Interferometer Type Optical Waveguide,, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2010) (2010), 1080-1081, 2010,9
  56. Detection of Antigen-Antibody Reaction Using Si Ring Optical Resonators Functionalized with an Immobilized Antibody-Binding Protein, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2010), 537-538, 2010,9
  57. Sensitivity Improvement of Biosensors using Si Ring Optical Resonators, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2010), 171-172, 2010,9
  58. Design and Simulation of Silicon Ring Optical Modulator with p/n Junctions along Circumference, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2010), 1076-1077, 2010,9
  59. Si Ring Optical Modulator with Multi-Cascade p/n Junctions, 7th International Conference on Group IV Photonics (Beijing, China, Sept. 1-3, 2010), P2.1, 2010,9
  60. Electrical Characteristic in the Low and High Temperatures for Tunneling-Dielectric TFT, Proc. 6th Int. Thin-Film Transistor Conf. (ITC'10) (Himeji, Jan. 2010), 265-268, 2010,1
  61. Fabrication of Si Nanowire Field-Effect Transistor for Highly Sensitive, Label-Free Biosensing, JAPANESE JOURNAL OF APPLIED PHYSICS, 48(6), 2009,6
  62. Optical modulator using metal-oxide-semiconductor type Si ring resonator, OPTICAL REVIEW, 16(3), 247-251, 2009,5
  63. Si Ring Optical Resonators for Integrated On-Chip Biosensing, JAPANESE JOURNAL OF APPLIED PHYSICS, 48(4), 2009,4
  64. Characterization of Ge Photodiodes Fabricated on Vicinal Si Substrate, JAPANESE JOURNAL OF APPLIED PHYSICS, 48(4), APR 2009
  65. Magneto-optic effect in amorphous Bi3Fe5O12 waveguides sputtered at room temperature, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 2915-2920, APR 2008
  66. Photoelastic effect in silicon ring resonators, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 2910-2914, APR 2008
  67. Imprint property of optical Mach-Zehnder interferometers using (Ba,Sr)TiO3 sputter-deposited at 450 degrees C, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 2897-2901, APR 2008
  68. Fabrication of tunneling dielectric thin-film transistor with very thin SiNx films onto source and drain, IEICE ELECTRONICS EXPRESS, 4(14), 442-447, 2007,7,25
  69. Transient response in monolithic Mach-Zehnder optical modulator using (Ba,Sr)TiO3 film sputtered at low temperature on silicon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(4B), 2462-2466, APR 2007
  70. Compact multimode optical ring resonators for interconnection on silicon chips, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(4B), 2364-2368, APR 2007
  71. Effect of H2 addition during Cu thin-film sputtering, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(12), 9058-9062, 2006,12
  72. Optical properties of amorphous Ba0.7Sr0.3TiO3 thin films obtained by metal organic decomposition technique, THIN SOLID FILMS, 515(4), 2326-2331, 2006,12,5
  73. Fabrication of spin-coated optical waveguides for optically interconnected LSI and influence of fabrication process on underlying metal-oxide-semiconductor capacitors, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(4B), 3498-3503, APR 2006
  74. Design and simulation of ring resonator optical switches using electro-optic materials, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(4B), 3493-3497, APR 2006
  75. Structural and optical properties of electro-optic material: Sputtered (Ba,Sr)TiO3, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(4B), 3488-3492, APR 2006
  76. Groove-buried optical waveguides based on metal organic solution-derived amorphous Ba0.7Sr0.3TiO3 thin films, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(4B), 3482-3487, APR 2006
  77. Monolithically integrated optical modulator based on polycrystalline Ba0.7Sr0.3TiO3 thin films, APPLIED PHYSICS LETTERS, 88(16), APR 17 2006
  78. Fabrication of high-density diamond nanotips by electron beam lithography, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(3A), 1771-1774, 2006,3
  79. Plasma-based ion implantation sterilization technique and ion energy estimation, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 23(4), 1018-1021, 2005,7-8
  80. Mechanism of anomalous behavior of metal-oxide-semiconductor capacitors contaminated with organic molecules, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(3), 1208-1212, 2005,3
  81. Evaluation of front-opening unified pod with attached UV/photocatalyst cleaning unit, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(2), 1130-1131, 2005,2
  82. Carrier mobility in metal-oxide-semiconductor field effect transistor with atomic-layer-deposited Si-nitride gate dielectrics, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 44(28-32), L903-L905, 2005
  83. Contact-hole etching with NH3-added C5F8 pulse-modulated plasma, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(9A), 6476-6480, 2005,9
  84. Structure and optical band-gap energies of Ba0.5Sr0.5TiO3 thin films fabricated by RF magnetron plasma sputtering, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(12), 8507-8511, 2005,12
  85. SiO2 hole etching using perfluorocarbon alternative gas with small global greenhouse effect, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(6A), 3586-3589, 2004,6
  86. Growth and electrical properties of atomic-layer deposited ZrO2/Si-nitride stack gate dielectrics, JOURNAL OF APPLIED PHYSICS, 95(2), 536-542, 2004,1,15
  87. Particle formation and trapping behavior in a TEOS/O-2 plasma and their effects on contamination of a Si wafer, AEROSOL SCIENCE AND TECHNOLOGY, 38(2), 120-127, 2004,2
  88. Investigation of surface contamination on silicon oxide after hydrofluoric acid etching by noncontact capacitance method, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(12), 7601-7602, 2003,12
  89. Organic contamination dependence of process-induced interface trap generation in ultrathin oxide metal oxide semiconductor transistors, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42(12A), L1429-L1432, 2003,12,1
  90. Compact branched optical waveguides using high-index-contrast stacked structure, OPTICAL REVIEW, 10(5), 357-360, 2003, 9-10
  91. Evaluation of surface contamination by noncontact capacitance method under UV irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(9A), 5837-5843, 2003,9
  92. Comparative studies of perfluorocarbon alternative gas plasmas for contact hole etch, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(9A), 5759-5764, 2003,9
  93. High quality atomic-layer-deposited ultrathin Si-nitride gate dielectrics with low density of interface and bulk traps, APPLIED PHYSICS LETTERS, 83(2), 335-337, 2003,7,14
  94. Phosphorus-assisted low-energy arsenic implantation technology for N-channel metal-oxide-semiconductor field-effect transistor source/drain formation process, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(5A), 2654-2659, 2003,5
  95. Carrier mobility in p-MOSFET with atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics, IEEE ELECTRON DEVICE LETTERS, 24(7), 472-474, 2003,7
  96. Excellent Contact-Hole Etching with NH3 Added C5F8 Pulse-Modulated Plasma, Extend. Abst. of the Int. Conf. on Solid State Devices and Materials, 454-455, 20030901
  97. Atomic-layer-deposited silicon-nitride/SiO2 stack - a highly potential gate dielectrics for advanced CMOS technology, MICROELECTRONICS RELIABILITY, 42(12), 1823-1835, 2002,12
  98. Atomic-layer deposition of ZrO2 with a Si nitride barrier layer, APPLIED PHYSICS LETTERS, 81(15), 2824-2826, 2002,10,7
  99. High-quality NH3-annealed atomic layer deposited Si-nitride/SiO2 stack gate dielectrics for sub-100 nm technology generations, SOLID-STATE ELECTRONICS, 46(10), 1659-1664, 2002,10
  100. Influence of organic contaminant on trap generation in thin SiO2 of metal-oxide-semiconductor capacitors, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 41(7A), 4750-4753, 2002,7
  101. Low-temperature formation of highly reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal-oxide-semiconductor technology, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 20(4), 1406-1409, 2002,7-8
  102. Conduction mechanism of Si single-electron transistor having a one-dimensional regular array of multiple tunnel junctions, APPLIED PHYSICS LETTERS, 81(4), 733-735, 2002,7,22
  103. Fabrication of Si single-electron transistors having double SiO2 barriers, APPLIED PHYSICS LETTERS, 80(24), 4617-4619, 2002,6,17
  104. Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal-oxide-semiconductor structures, APPLIED PHYSICS LETTERS, 80(21), 3952-3954, 2002,5,27
  105. Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires, JOURNAL OF APPLIED PHYSICS, 91(8), 5213-5220, APR 15 2002
  106. Low thermal-budget ultrathin NH3-annealed atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics with excellent reliability, IEEE ELECTRON DEVICE LETTERS, 23(4), 179-181, APR 2002
  107. NH3-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability, APPLIED PHYSICS LETTERS, 80(7), 1252-1254, 2002,2,18
  108. An Effective Method for Obtaining Interface Trap Distribution in MOS capacitors with Tunneling Gate Oxides, Proceedings 2002 IEEE Int. Conf. on Semiconductor Electronics (ICSE 2002), 402-406, 20021201
  109. A comparative study of bulk and interface trap generation in ultrathin SiO2 and atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics, Forth Int. Symposium on Control of Semiconductor Interface (ISCSI-IV), A6-3-A6-3, 20021001
  110. Atomic-layer deposition of ZrO2 with a Si nitiride barrier layer, 2002 International Conf. on Solid State Devices and Materials, 452-453, 2002,9,1
  111. Time-dependent breakdown of ultrathin SiO2 gate dielectrics under static and dynamic stress, Abst. 2nd ECS Int. Semiconductor Technology Conf., Abstract No.71, 20020901
  112. A novel method for extracting the energy distribution of Si/SiO2 interface traps in ultrathin oxide MOS structures, the Second IEEE Conference on Nanotechnology, 20020801
  113. Atomic-layer-deposition of Si nitride and ZrO2 for gate dielectrics, Abst. AVS Topical Conference on Atomic Layer Deposition (ALD 2002), 6-6, 20020801
  114. Soft-breakdown-suppressed ultrathin atomic-layer-deposited silicon-nitride/SiO2 stack gate dielectrics for advanced complementary metal-oxide-semiconductor technology, APPLIED PHYSICS LETTERS, 79(21), 3488-3490, 2001,11,19
  115. Influence of organic contaminant on breakdown characteristics of MOS capacitors with thin SiO2, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40(4B), 2849-2853, APR 2001
  116. Effect of light irradiation on native oxidation of silicon surface, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40(4A), 2223-2224, APR 2001
  117. Fabrication technologies for Double-SiO2-barrier metal-oxide-semiconductor transistor with a poly-Si dot, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40(3B), 2017-2020, 2001,3
  118. Characterization of atomic-layer-deposited silicon nitride/SiO2 stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 19(4), 1138-1143, 2001,7-8
  119. Self-limiting atomic-layer deposition of Si on SiO2 by alternate supply of Si2H6 and SiCl4, APPLIED PHYSICS LETTERS, 79(5), 617-619, 2001,7,30
  120. Low-temperature selective deposition of silicon on silicon nitride by time-modulated disilane flow and formation of silicon narrow wires, APPLIED PHYSICS LETTERS, 79(4), 494-496, 2001,7,23
  121. Low-temperature formation of silicon nitride gate dielectrics by atomic-layer deposition, APPLIED PHYSICS LETTERS, 79(5), 665-667, 2001,7,30
  122. Ultrathin NH3 annealed atomic layer deposited Si-nitride/SiO2 stack gate dielectrics with high reliability, 2001 International Semiconductor Device Research Symposium, 26-29, 20011201
  123. Soft breakdown free atomic-layer-deposited silicon-nitride/SiO2 stack gate dielectrics, Technical Digest of the 2001 IEEE International Electron Devices Meeting, 133-136, 20011201
  124. Stacked Optical Branched Waveguides for Optical Interconnection on Si Chip, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 596-597, 20010401
  125. Influence of Organic Contaminantion on Reliability and Trap Generation in MOS Devices, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 176-177, 20010401
  126. Conduction Mechanism in Extremely Thin Poly-Si Wires ---Width Dependence of Coulomb Blockade Effect---, 1994 International Conf. on Solid State Devices and Materials, 438-439, 20010401
  127. Characterization of atomic-layer-deposited silicon nitride/SiO2 stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors, J. Vac. Sci. Tech. B., 19, 1138-1143, 20001001
  128. Low-temperature selective deposition of silicon by time-modulation exposure of disilane and formation of silicon nanowires, Extend. Abst.2001 Int. Conf. on Solid State Devices and Materials, 202-203, 20000401
  129. Fabrication of novel double-barrier MOS transistors with poly-Si dots, Abst. of Intern. Symp. on Formation, Physics and Device Application of Quantum Dot Structures, 10-10, 20000401
  130. Atomic-layer-deposited silicon nitride/SiO2 stacked gate dielectrics for highly reliable p-MOSFETs, Applied Physics Letters, 77(18), 2855-2857, 20000101
  131. Comparative Studies of PFC alternative Gas Plasmas for Contact Hole Etch, Proc. of 22th Symp. on Dry Process (2000), 199-204, 20001001
  132. Influence of Organic Contaminant on Breakdown Characteristics of MOS Capacitors with Thin SiO2, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 552-553, 20000401
  133. Optimum Atomic Spacing for AlAs Etching in GaAs Epitaxial Lift-Off Technology, Jpn. J. Appl. Phys., 39(5B), L457-L459, 20000401
  134. Calculation of electrical properties of novel double-barrier metal oxide semiconductor transistors, Jpn. J. Appl. Phys., 38(part1,1B), 399-402, 19990101
  135. Characterization of silicon/oxide/nitride layers by X-ray photoelectron spectroscopy, Applied Physics Letters, 75(11), 1535-1537, 19990901
  136. Evaluation of 300 mm Wafer Boxes with UV/Photoelectron Cleaning Capability, Proc. Int. Symp. on Semicon. Manuf., 169-172, 19990401
  137. Atomic-Layer Deposition of Silicon Nitride, J. Korean Physical Soc., 35, S71-S75, 19990401
  138. Quantitative evaluation of dopant loss in 5-10 keV As ion implantation for low-resistive, ultrashallow source/drain formation, Jpn. J. Appl. Phys., 38(4B), 2324-2328, 19990401
  139. High-Speed GaAs Epitaxial Lift-Off and Bonding with High Alignment Accuracy Using Sapphire Plate, J. Electrochem. Soc., 146(2), pp.710-712, 19990401
  140. Calculation of electrical properties of novel double-barrier MOS transistors, Abst. of Intern. Symp. on Formation, Physics and Device Application of Quantum Dot Structures, 10-10, 1998,4,1
  141. Threshold voltage fluctuation induced by direct tunnel leakage current through 1.2-2.8nm thick gate oxides for scaled MOSFETs, Tech. Digest IEDM, 919-922, 19981201
  142. Reduction of Gaseous Contamination by UV/Photoelectron Method, IEEE Trans. Semicond. Manuf., 11(1), 9-12, 19980401
  143. An Experimental Pattern Recognition System Using Bidirectional Optical Bus Lines, Jpn. J. Appl. Phys., 37(3B), 1116-1121, 19980401
  144. Effect of UV/Photoelectron and Photocatalyst Cleaning on the Reliability of Thin Gate Oxides, Proc. of the 44th Meeting of the Institute of Environm. Sci. and Tech., 210-214, 19980401
  145. Self-Limiting Atomic-Layer Selective Deposition of Silicon Nitride by Temperature-Controlled Method, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 22-23, 19980401
  146. Design and Fabrication of Optically-Interconnected Kohonen Net for High-Speed Pattern Recognition, Proc. Int. Symp. on Future of Intellectual Integrated Electronics, 453-457, 19980401
  147. Atomic-Layer Selective Deposition of Silicon Nitride on Hydrogen-Terminated Si Surfaces, Applied Surface Science, 130-132, 352-356, 19980401
  148. Dopant loss origins of low energy implanted arsenic and antimony for ultra shallow junction formation, Mat. Res. Soc. Symp. Proc., 532, 23-28, 1998,4,1
  149. Quantitative Evaluation of Dopant Loss in Low Energy As Implantation for Low-Resistive, Ultra Shallow Source/Drain Formation, 1994 International Conf. on Solid State Devices and Materials, 18-19, 19980801
  150. Evaluation of Stress Induced Deffects due to Recessed LOCOS Process, Abst. of IUMRS Int. Conf. on Electronic Materials 1998 (IUMRS-ICEM-98), 79, 19980801
  151. New Ar-plasma cleaning process for reduction of Al/TiSi2 contact resistance, Jpn. J. Appl. Phys., 37(11), 5902-5905, 19981101
  152. Threshold voltage fluctuation induced by direct tunnel leakage current through 1.2-2.8 nm thick gate oxides for scaled MOSFETs, Int. Electron Devices Meeting 1998. Technical Digest, 919-922, 19981201
  153. A study of electrical characteristics improvements in sub-0.1 mu m gate length MOSFETs by low temperature operation, IEICE Trans. Electron., E81-C(12), 1913-1917, 19981201
  154. Atomic-Layer Deposition of Silicon Nitride, Abst. of IUMRS Int. Conf. on Electronic Materials, 78-78, 1998,4,1
  155. Influence of Wafer Material on Defect Generation During Deep Submicron LOCOS Process, 1994 International Conf. on Solid State Devices and Materials, 579-582, 19970801
  156. Atomic Layer Controlled Deposition of Silicon Nitride and In Situ Growth Observation by Infrared Reflection Absorption Spectroscopy, Applied Surface Science, 112, 75-81, 19970401
  157. High-Speed GaAs Epitaxial Lift-Off and Bonding with High Alignment Accuracy using Sapphire Plate, Abst. 191st Electrochem. Soc. Meeting, 2469-2469, 19970401
  158. Reliability Evaluation of Ultrathin Gate Oxides Grown on Si Wafers Stored in Clean Stocker with a UV/Photoelectron Source, Proc. Int. Symp. on Semicon. Manuf., F-5-F-8, 19970401
  159. Atomic-Layer Selective Deposition of Silicon Nitride on Hydrogen-Terminated Si Surfaces, Abst. 4th Int. Symp. on Atomically Controlled Surf. and Interfaces, 314-315, 19970401
  160. Experimental Pattern Recognition System using Bidirectional Optical Bus Lines, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 388-389, 19970401
  161. Heteroepitaxial Layer Overgrowth of GaP on Structured Silicon Surfaces, Abst. 191st Electrochem. Soc. Meeting, 499-499, 19970401
  162. Photo-electronic Crossbar Switching Network for Multiprocessor Systems, Appl. of Photonic Tech. 2, Plenum Press, 505-510, 19970401
  163. High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits, Jpn. J. Appl. Phys., 36(3), pp.1554-1557, 19970401
  164. Experimental Pattern Recognition System using Bi-directional Optical Bus Lines, 19970901
  165. High-Efficiency Micromirrors and Branched Optical Waveguides on Silicon Chip, Jpn. J. Appl. Phys., 35(2B), 941-945, 19960401
  166. Control of Fine Particulate and Gaseous Contaminants by UV/Photoelectron Method, IEICE Trans. Electron., E79-C(3), 306-311, 19960401
  167. High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 643-645, 19960401
  168. Reduction of Gaseous Contamination by UV/Photoelectron Method, Proc. Int. Symp. on Semicon. Manuf., 192-195, 19960401
  169. Real-Time Study on Heteroepitaxial GaAs and GaP Growth Processes on Structured Si(100) Substrates, Abst. 1996 Fall meeting of Mat. Rec. Soc., M8.2-M8.2, 19960401
  170. Atomic Layer Controlled Deposition of Silicon Nitride with Self-limiting Mechanism, Applied Physics Letters, 68(23), 3257-3259, 19960401
  171. Optically Interconnected Kohonen Net for Pattern Recognition, Jpn. J. Appl. Phys., 35(2B), pp.1405-1409, 19960401
  172. Optical Interconnection on Silicon LSI Chips, Proc. Photonics West, 2400, 89-93, 19950401
  173. Test Chip Fabrication of 3D Optically Coupled Common Memory for Parallel Processing System, Proc. Photonics West, 2400, 8-15, 19950401
  174. GaAs/Si Optoelectronic Design and Development at Hiroshima Universit, Proc. Intern. Workshop of Semicon. Character.(Gaithersburg, USA), 599-604, 1995,4,1
  175. Fabrication and Evaluation of Three-Dimensional Optically-Coupled Common Memory, Jpn. J. Appl. Phys., 34(2B), 1246-1248, 19950401
  176. Single-Chip Integration of Light-Emitting Diode, Waveguide and Micromirrors, Jpn. J. Appl. Phys., 34(2B), 1282-1285, 19950401
  177. High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 830-832, 19950401
  178. Optically Interconnected Kohonen Net for Pattern Recognition, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 1075-1076, 19950401
  179. Valence Band Alignment of Ultra-Thin SiO2/Si Interfaces as Determined by High Resolution X-Ray Photoelectron Spectroscopy, Mat. Res. Soc. Symp. Proc., 386, 249-254, 1995,4,1
  180. Valence Band Alignment at Ultra-Thin SiO2/Si(100) Interfaces Determined by High-Resolution X-Ray Photoelectron Spectroscopy, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 28-30, 19950401
  181. Control of Fine Particulate and Gaseous Contaminants by UV/Photoelectron Method, Proc. Int. Symp. on Semicon. Manuf., 60-63, 19950401
  182. Optical Waveguides on Si Chip, J. Vac. Sci. Technol. A, 13(3), 629-635, 19950401
  183. Determination of Valence Band Alignment at Ultra-Thin SiO2/Si Interfaces by H, Jpn. J. Appl. Phys., 34(6A), L653-L656, 19950401
  184. Fine Particulate Contaminant Control by the UV/Photoelectron Method under a Low Pressure Condition, Review of Scientific Instruments, 66(11), 5348-5351, 19950401
  185. High-Efficiecy Micromirrors and Branched Optical Waveguides on Si Chips, Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials(SSDM'95), 830-831, 1995,9,1
  186. Micron-Size Optical Waveguide for Optoelectronic Integrated Circuits, Jpn. J. Appl. Phys., 33(1B), 822-826, 19940401
  187. New RAM-Bus Memory System with Interchip Optical Interconnection, Jpn. J. Appl. Phys., 33(1B), 848-851, 19940401
  188. Fundamental Characteristics of Optically Coupled Three-Dimensional Common Memory, Optoelectronics Devices and Technologies, 9(1), 119-130, 19940401
  189. He Ion Beam Induced Arsenic Atom Displacement Studied by Medium-Energy Ion Spectroscopy, Mat. Res. Soc. Symp. Proc., 316, 123-128, 1994,4,1
  190. The Performance Study of Ion Implanter Based Medium Energy Ion Spectroscopy with Solid State Detector, Mat. Res. Soc. Symp. Proc., 324, 409-414, 1994,4,1
  191. Single Chip Integration of LED, Waveguide and Micromirrors, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 90-92, 19940401
  192. Fabrication and Evaluation of Three-Dimensional Optically-Coupled Common Memory, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 965-966, 19940401
  193. Evaluation of Plasma-Induced Damage by Medium Energy Ion Scattering, Jpn. J. Appl. Phys., 33(4B), 2179-2183, 19940401
  194. Implanted Antimony Precipitation in Silicon Studied by Medium-Energy Ion Scattering, Jpn. J. Appl. Phys., 33(12B), L1799-L1802, 19940401
  195. Single Chip Integration of LED, Waveguide and Micormirrors, 1994 Intern. Conf. on Solid State Devices and Materials (Yokohama, Aug. 23-26, 1994), 90-92, 1994,8,1
  196. Fabrication and Evaluation of Three-Dimensional Optically-Coupled Common Memory, 1994 International Conf. on Solid State Devices and Materials, 965-966, 19940801
  197. Helium Ion Beam Induced Arsenic Atom Displacement Studied by Medium-Energy Ion Spectroscopy, Mat. Res. Soc. Symp. Proc., 316, 123, 19940401
  198. Influence of Sputtering Geometry on Crystallinity of Al(110) Thin Films on Offset (100)Si, Jpn. J. Appl. Phys., 32(2B), L283-L286, 19930401
  199. Medium Energy Ion Spectroscopy of Very Thin As Implanted Layer in Si, Digest of Papers of 6th Intern. MicroProcess Conf., 194-195, 19930401
  200. Effect of Hydrogen and Bias on Single-Crystal Al Growth on Vicinal Si by DC Magnetron Sputtering, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 546-548, 19930401
  201. Medium Energy Ion Spectroscopy of Ultra-Thin As+ Implanted Layers: The Effect of Reversible Site Change of As Atoms, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 582-584, 19930401
  202. Micron-Size Optical Waveguide for Optoelectronic Integrated Circuits, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 1047-1049, 19930401
  203. New RAM-Bus Memory System with Interchip Optical Interconnection, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 673-675, 19930401
  204. Evaluation of Plasma-Induced Damage by Medium Energy Ion Scattering, Porc. of 15th Symp. on Dry Process, 73-78, 19930401
  205. Medium-Energy Ion Spectroscopy Using Ion Implanter, Jpn. J. Appl. Phys., 32(7A), L962-L965, 19930401
  206. 3 V Operation of 70 nm Gate Length MOSFET with New Double Punchthrough Stopper Structure, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 490-492, 19920401
  207. Parallel Data Inspection Operation in Three-Dimensional Content Addressable Memory with Optical Interconnection, 1992 Intern. Conf. on Solid State Devices and Materials (Tsukuba, Aug. 26-28, 1992), 592-594, 1992,8,1
  208. Atomic Layer Growth of Bi-Sr-Ca-Cu-O by Molecular Beam Epitaxy Using Ozone under UV Irradiation, Jpn. J. Appl. Phys., 30(1B), L106-L109, 19910401
  209. Design of Optically Coupled Three Dimensional Content Addressable Memory, Jpn. J. Appl. Phys., 30(3A), L338-L341, 19910401
  210. Single Crystal Growth of Al(110) on Si(100) by Ultra-High-Vacuum Sputtering System, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 757-758, 19910401
  211. Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Superconducting Films by Molecular Beam Epitaxy, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 435-437, 19910401
  212. A Novel Fabrication Technology for Optically Interconnected Three Dimensional LSI by Wafer Aligning and Bonding Technique, Int. Semicon. Device Research Symposium, 327-330, 19910401
  213. Single-Crystal Growth of Al(110) on Vicinal Si(100) in Ultra-High-Vacuum Sputtering System, Jpn. J. Appl. Phys., 30(12B), 3685-3690, 19910401
  214. Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Superconducting Films by Molecular Beam Epitaxy, Jpn. J. Appl. Phys., 30(12B), 3900-3903, 19910401
  215. Coupled Monte Carlo-Energy Relaxation Analysis of Hot-Carrier Light Emission in Metal Oxide Semiconductor Field Effect Transistors, Jpn. J. Appl. Phys., 30(12B), 3666-3670, 19910401
  216. Chemical Bonding Features of Fluorine and Boron in BF2+-Ion-Implanted Si, Extend. Abst. of Conf. on Solid State Devices and Materials, 421-424, 19900401
  217. Design of Optically Coupled Three Dimensional Content Addressable Memory, Extend. Abst. of Conf. on Solid State Devices and Materials, 765-768, 19900401
  218. Atomic Layer Growth of Bi-Sr-Ca-Cu-O by Molecular Beam Epitaxy Using Ozone under UV Irradiation, Extend. Abst. of Conf. on Solid State Devices and Materials, 929-932, 19900401
  219. Two-Dimensional Device Simulation for Poly-Silicon Thin Film Transistor, 1994 International Conf. on Solid State Devices and Materials, 1003-1006, 19900401
  220. Two-Dimensional Device Simulation for Avalanche Induced Short Channel Effect in Poly-Si TFT, Tech. Digest Int. Electron Devices Meeting, 859-862, 19900401
  221. Chemical Bonding Features of Fluorine and Boron in BF2+-Ion-Implanted Si)., Jpn. J. Appl. Phys., 29(12), L2349-L2352, 19900401
  222. Two-Dimensional Device Simulation for Poly-Silicon Thin Film Transistor, Jpn. J. Appl. Phys., 29(12), L2388-L2391, 19900401
  223. Chemical Bonding Features of Fluorine in BF2+ implanted Si, the 3rd Symp. on Ion Sources and Ion-Assisted Technology: Special Seminar (Tokyo, June 4-6, 1990), 187-194, 1990,6,1
  224. Low-Temperature Selective Growth of GaAs by Alternately Supplying Molecular Beam Epitaxy, J. Cryst. Growth, 95(1-4), 32-34, 19890401
  225. Lateral Control of Impurity-Induced Disordering of AlAs/GaAs Superlattice, Nuclear Instr. and Methods in Phys. Research, B39(1-4), 441-444, 19890401
  226. Antiphase Defect Reduction Mechanism in MBE Grown GaAs on Si, Mat. Res. Soc. Symp. Proc.=, 116, 261-263, 19890401
  227. Anisotropic Lateral Growth of GaAs in Molecular Beam Epitaxy, Proc. 16th Int. Symp. on GaAs and Related Compounds, 147-152, 19890401
  228. Solid-Phase Epitaxy of Molecular Beam Deposited Amorphous GaAs on Si, Appl. Phys. Lett, 54(25), 2562-2564, 19890401
  229. Low Temperature Growth of GaAs on Si by Migration Enhanced Molecular Beam Epitaxy, Extend. Abst. of Conf. on Solid State Devices and Materials, 147-150, 19870401
  230. Solid-Phase Crystal Growth of Molecular-Beam-Deposited Amorphous GaAs, J. Appl. Phys., 62(5), 1808-1814, 19870401
  231. Preparation of Y-Ba-Cu-O Thin Films by RF-Magnetron Sputtering, Jpn. J. Appl. Phys., 26(9), L1484-L1486, 19870401
  232. A New Method of Measuring Internal Stress in Thin Films Deposited on Silicon by Raman Spectroscopy, Jpn. J. Appl. Phys., 24(1), 866-867, 19850401
  233. Laser-Assisted Chemical Vapor Deposition of Stoichiometric Boron Nitrid, Extend. Abst. of Conf. on Solid State Devices and Materials, 169-172, 19850401
  234. Anisotropic Etching of SiO2 by Excimer Laser Irradiation, Porc. of Dry Process Symp., 39-43, 19850401
  235. Laser-Induced Photochemical Etching of GaAs and Its Characterization by X-Ray Photoelectron Spectroscopy and Luminescence, Proc. 16th Int. Symp. on GaAs and Related Compounds, 325-330, 19850401
  236. Laser-Induced Photochemical Etching of SiO2 Studied by X-Ray Photoelectron Spectroscopy, Appl. Phys. Lett., 47(4), 389-391, 19850401
  237. Characterization of Photochemical Processing, J Vac Sci Technol B, 3(5), 1445-1449, 19850401
  238. Dependence of Interface State Density on the Atomic Roughness at the Si/SiO2 Interface, Surf. Sci., 142(1-3), 545-555, 19840401
  239. Laser-Induced Chemical Dry Etching of SiO2, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 451-454, 19840401
  240. Granular Si-Rich Oxide and Si-Rich Nitride Films Deposited by Plasma CVD, Porc. of Dry Process Symp., 35-40, 19830401
  241. Characterization of Plasma-Enhanced Chemically-Vapor-Deposited Silicon-Rich Silicon Dioxide/Thermal Silicon Dioxide Dual Dielectric System, J. Appl. Phys., 54(12), 7058-7065, 19830401
  242. Interface Barrier Heights in Metal-Aluminum Nitride-Silicon Structure by Internal Photoemission, J. Appl. Phys., 53(5), 3694-3697, 19820401
  243. Internal Photoemission in the Anodic Oxide/GaAs Interface, Appl. Phys. Lett., 38(2), 97-99, 19810401
  244. Electron Spin Resonance in Discharge-Produced Silicon Nitride, Jpn. J. Appl. Phys., 20(1), L35-L37, 19810401
  245. Optical Emission Spectroscopy of the SiH4-NH3-H2 Plasma During the Growth of Silicon Nitride, Jpn. J. Appl. Phys., 20(2), L117-L120, 19810401
  246. Characterization of Plasma Deposited SiN Films, Proc. of Symp. on Plasma Processing, 13-25, 19810401
  247. Characterization of Plasma-Deposited Silicon Nitride Films, J. Appl. Phys., 51(10), 5470-5474, 19800401
  248. GaAs MOS Structures with Al2O3 Grown by Molecular Beam Reaction under UV Excitation, Thin Solid Films, 56(1-2), 81-88, 19790401
  249. GaAs MOS Structures with Al2O3 Grown by Molecular Beam Reaction, Surface Science, 86(8), 835-840, 1979,4,1
  250. Surface States in GaAs Tunnel MIS Structures, Phys. Stat. Sol. (a), 42(2), 483-488, 1977,4,1

Publications such as books

  1. 2002/,6, Bipolar Voltage Pulse Induced Current - A Means for Reliable Extraction of Interface Trap Distribution in Ultrathin Oxides MOS Structure , 2002, 06, 6

Invited Lecture, Oral Presentation, Poster Presentation

  1. Integrated Differential Si-Ring Resonator Biosensors for Selective Detection of Antigen-Antibody Reaction, Shin Yokoyama, Tomoya Taniguchi, Takeshi Ikeda, and Akio Kuroda, OPTICS & PHOTONICS International Congress 2016, 2016/05/17, With Invitation, Yokohama City, Japan
  2. Integrated Optical Biosensors, Shin Yokoyama, Tomoya Taniguchi, Takeshi Ikeda, and Akio Kuroda, 2015/06/09, With Invitation, Tokyo University of Science, Introduction about Si ring resonator biosensor., 講演予稿集
  3. Si Ring Resonator and Photonic Crystal Resonator Biosensors, Shin Yokoyama, Takeshi Ikeda, Akio Kuroda, Third International Symposium on Semiconductor Materials and Devices, 2015/02/04, Without Invitation, Anna University, India, Anna University, Chennai, India, Biosensors using Si Ring Resonator and Photonic Crystal Resonator are introduced.
  4. Introduction of Research at Research Institute for Nanodevice and Bio Systems, Shin Yokoyama, Anri Nakajima, Shinnichiro Kuroki, 2015/01/24, With Invitation, Hiroshima University Higashihiroshima campus, Introduction of Research concering Materials Science at Research Institute for Nanodevice and Bio Systems
  5. Si Ring Resonator and Photonic Crystal Resonator Biosensors, Shin Yokoyama, Takeshi Ikeda, Akio Kuroda, Techinical Meeting on Silicon Photonics, 2015/01/22, With Invitation, The Institute of Electronics, Information and Communication Engineers, Higashihiroshima City, Introduction of Si ring and photonic crystal resonator biosensors
  6. Optical Switches and Biosensors using Silicon Photonics, Shin Yokoyama, Yoshiteru Amemiya, Tetsuo Tabei, Takeshi Ikeda, and Akio Kuroda, The Japan Society od Applied Physics, Autum Meeting, 2014/09/20, With Invitation, The Japan Society od Applied Physics, Hokkaido University, Introduction about biosensors and optical switches using Si photonics
  7. Integrated Optical-Resonator Biosensors Using Silicon Photonics, Shin Yokoyama, Takeshi ikeda, Akio Kuroda, 2014 IEICE General Conference, 2014/03/18, With Invitation, The Institute of Electronics, Information and Communication Engineers, Niigata University, Japan, Introduction of Si ring biosensors, 予稿集
  8. Introduction of Bio Related Studies at Research Institute for Nanodevice and Bio Systems, Hiroshima University, Shin Yokoyama, T. Kikkawa, A. Nakajima, T. Koide, The 11th Symposium on Plasmonics, 2014/01/24, With Invitation, Plasmonics Research Group, Hiroshima University, Higashihiroshima Campus, interoduction of Bio Related Studies are introduced.
  9. Biosensors using silicon photonics, Shin Yokoyama, The society of photonic devices and application technologies, 2013/10/09, With Invitation, OPTOELECTRONICS INDUSTRY AND TECHNOLOGY DEVELOPMENT ASSOCIATION, Sophia University, Introduction of biosensors using silicon photonicc
  10. Biosensors using Si ring optical resonators, Shin Yokoyama, T. Ikeda, A. Kuroda, 2011 IEICE General Conference, 2011/03/14, With Invitation, The Institute of Electronics, Information and Communication Engineers, Tokyo City University, Presentation concerning Si ring resonator biosensors, 予稿集
  11. Silicon Nanodevices and Their Bio Application, Shin Yokoyama, T. Kikkawa, A. Nakajima, The 7th nano Bio Chemistry Symposium, Hirhoshima University, 2010/12/04, With Invitation, Hiroshima University, Hiroshima University, Higashihiroshima Campus, Presentation Concerning Silicon Nanodevices and Their Bio Application, 予稿集
  12. Problems of on-chip interconnection and optical interconnection, Shin Yokoyama, Yoshiteru Amemiya, 2010/11/29, With Invitation, The Institute of Electronics, information and Communication Engineers, Kyushu University, The problems of current LSI with metal interconnection are pointed out, i.e., increasing signal delay and power dissipation of global metal interconnection. Some of possible solutions, transmission line, standing-wave signal distribution method and optical interconnection are explained., 信学技法IEICE Technical Report CPM2010-128, ICD2010-87(2010-11). pp. 25-30.
  13. On-Chip Optical Interconnection, Shin Yokoyama, 2009 IEICE General Conference, 2009/03/19, With Invitation, The Institute of Electronics, Information and Communication Engineers, Ehime University, On-chip optical interconnection using Si ring resonators are introduced., 信学技報
  14. Atomic-Layer Deposition of Silicon Nitride, Shin Yokoyama, "IUMRS Int. Conf. on Electronic Materials 1998 (IUMRS-ICEM-98) (Cheju, Korea)", 1998/08, With Invitation, Cheju, Korea
  15. Optical Waveguides on Si Chips, Shin Yokoyama, 1995/10, With Invitation, Denver, Colorado
  16. Three-Dimensional and Two-Dimensional Optical Interconnections in Si LSI, Shin Yokoyama, 1995/09, With Invitation, Porvoo, Finland
  17. GaAs/Si Optoelectronic Design and Development at Hiroshima University, Shin Yokoyama, 1995/01, With Invitation, Gaithersburg, USA

Patented

  1. Patent, JP4215812, 2008/11/14
  2. Patent, JP4227667, 2008/12/05
  3. Patent, JP4315247, 2009/05/29
  4. Patent, JP4392051, 2009/10/16
  5. Patent, JP4392052, 2009/10/16
  6. Patent, JP4427589, 2009/12/18
  7. Patent, JP4445556, 2010/01/22
  8. Patent, US:7720389, 2010/05/18
  9. Patent, JP4596451, 2010/10/01
  10. Patent, US:7847225, 2010/12/07
  11. Patent, US:7907847, 2011/03/15
  12. Patent, US:8044382, 2011/10/25
  13. Patent, US:8330141, 2012/12/11
  14. Patent, US:8368046, 2013/02/05
  15. Patent, US:8470693, 2013/06/25
  16. Patent, JP5480512, 2014/02/21
  17. Patent, 台湾JP発明第153080号
  18. Patent, 8980658, 2015/03/17