横山 新Shin Yokoyama

Last Updated :2017/08/01

所属・職名
ナノデバイス・バイオ融合科学研究所 ナノ集積科学研究部門 教授
ホームページ
メールアドレス
yokoyama-shinhiroshima-u.ac.jp

基本情報

主な職歴

  • 2008年05月01日, 広島大学, ナノデバイス・バイオ融合科学研究所, 教授
  • 1996年05月11日, 2008年04月30日, 広島大学, ナノデバイス・システム研究センター, 教授
  • 1994年05月01日, 1996年03月31日, 広島大学, 集積化システム研究センター, 教授
  • 1989年11月01日, 1994年04月30日, 広島大学, 集積化システム研究センター, 助教授
  • 1989年08月16日, 1989年10月31日, 筑波大学, 物質工学系, 助教授
  • 1985年10月01日, 1989年08月15日, 筑波大学, 物質工学系, 講師
  • 1981年04月01日, 1985年09月30日, 広島大学, 工学部, 助手

学歴

  • 広島大学, 工学研究科, 材料工学専攻, 日本, 1978年04月, 1981年03月
  • 広島大学, 工学研究科, 電気工学専攻, 日本, 1976年04月, 1978年03月
  • 広島大学, 工学部, 電子工学科, 日本, 1972年04月, 1976年03月

学位

  • 工学博士 (広島大学)
  • 工学修士 (広島大学)

教育担当

  • 先端物質科学研究科:半導体集積科学専攻, 先端物質科学研究科:半導体集積科学専攻

担当主専攻プログラム

  • 電子システムプログラム

研究分野

  • 工学 / 電気電子工学 / 電子デバイス・電子機器

研究キーワード

  • プロセス
  • LSI
  • 電子デバイス
  • 極微細デバイス
  • 光配線
  • バイオセンサー

所属学会

教育活動

授業担当

  1. 2017年, 教養教育, セメスター(前期), 科学技術と人間社会[1工二]
  2. 2017年, 学部専門, セメスター(後期), 半導体プロセス工学
  3. 2017年, 修士課程・博士課程前期, セメスター(前期), 先端物質科学特別講義
  4. 2017年, 修士課程・博士課程前期, セメスター(前期), エレクトロニクス概論
  5. 2017年, 修士課程・博士課程前期, 通年, 集積回路・プロセス演習
  6. 2017年, 修士課程・博士課程前期, セメスター(前期), LSI集積化工学
  7. 2017年, 修士課程・博士課程前期, セメスター(前期), 光電融合システム
  8. 2017年, 修士課程・博士課程前期, 年度, 半導体集積科学特別研究 I
  9. 2017年, 修士課程・博士課程前期, 通年, 半導体集積科学特別研究 I
  10. 2017年, 修士課程・博士課程前期, 年度, 半導体集積科学特別研究 I
  11. 2017年, 修士課程・博士課程前期, 年度, 半導体集積科学特別研究 I
  12. 2017年, 博士課程・博士課程後期, 年度, 半導体集積科学特別研究Ⅱ
  13. 2017年, 博士課程・博士課程後期, 年度, 半導体集積科学特別研究Ⅱ
  14. 2017年, 博士課程・博士課程後期, 通年, 半導体集積科学特別研究Ⅱ
  15. 2017年, 博士課程・博士課程後期, 年度, 半導体集積科学特別研究Ⅱ
  16. 2017年, 博士課程・博士課程後期, 年度, 半導体集積科学特別研究Ⅱ
  17. 2017年, 博士課程・博士課程後期, 年度, 半導体集積科学特別研究Ⅱ
  18. 2017年, 博士課程・博士課程後期, 集中, 半導体集積科学特別研究Ⅱ

研究活動

学術論文(★は代表的な論文)

  1. Temperature Dependence of Resonance Characteristics of Silicon Resonators and Thermal Stability Improvement by Differential Operation Method, Japanese Journal of Applied Physics, 56巻, 4号, pp.04CC06-1-pp.04CC06-5, 2017,4
  2. High-Sensitivity Double-Cavity Silicon Photonic-Crystal Resonator for Label-Free Biosensing, Japanese Journal of Applied Physics, 56巻, 4号, pp.04CM06-1-pp.04CM06-5, 2017, 4
  3. Influence of Surface Smoothing on Spin Seebeck Effect of Ce1Y2Fe5O12 Deposited by Metal Organic Decomposition, Japanese Journal of Applied Pgysics, 56巻, 4号, pp.04CN04-1-pp.04CN04-4, 2017,4
  4. MEMS Optical Switches Using Slot Ring Resonator for Low Voltage Operation, Japanese Journal of Applied Physics, 55巻, 4号, pp.04EC15-1-pp.04EC15-5, 2016, March, 29
  5. Magneto-Optical Switching Devices Based on Si Resonators, Japanese Journal of Applied Physics, 55巻, 4号, pp.04EN02-1-pp.04EN02-6, 2016, March, 22
  6. Blockade and Staircase Phenomena of Holes in Mesoscopic Scale lambda-Deoxyribonucleic Acid (DNA) / SiO2/ Si Structure, IEEE Electron Device Letters, 37巻, 2号, pp.224-pp.227, 2016, January, 6
  7. Detection of antibody-antigen reaction by silicon nitride slot-ring biosensors using protein G, OPTICS COMMUNICATIONS, 365巻, pp.16-pp.23, APR 15 2016
  8. Design and characterization of MEMS optical devices using slot-ring resonator for low-voltage operation, JAPANESE JOURNAL OF APPLIED PHYSICS, 55巻, 4号, APR 2016
  9. Silicon photonic crystal resonators for label free biosensor, JAPANESE JOURNAL OF APPLIED PHYSICS, 55巻, 4号, pp.04EM11-1-pp.04EM11-5, APR 2016
  10. Differential Si ring resonators for label-free biosensing, JAPANESE JOURNAL OF APPLIED PHYSICS, 55巻, 4号, pp.04EM04-1-pp.04EM04-7, APR 2016
  11. Mechanisms of temperature dependence of threshold voltage in high-k/metal gate transistors with different TiN thicknesses, INTERNATIONAL JOURNAL OF ELECTRONICS, 103巻, 4号, pp.629-pp.647, APR 2 2015
  12. Detection of antibody-antigen reaction by silicon nitride slot-ring biosensors using protein G, Optics Communications, 365巻, pp.16-pp.23, 2015, December, 10
  13. Proposal of MEMS Optical Device Using Slot-Ring Resonator with Low-Voltage Operation, 11th Int. Conf. on Group IV Photonics, pp.69-pp.70, 201408
  14. Differential Si Ring-Resonator Biosensors Robust to Process Variations, 11th Int. Conf. on Group IV Photonics, pp.213-pp.214, 201408
  15. Study of charge retention mechanism for DNA memory FET, IEICE ELECTRONICS EXPRESS, 11巻, 5号, 2014
  16. Improvement of Hump Phenomenon of Thin-Film Transistor by SiNX Film, IEICE TRANSACTIONS ON ELECTRONICS, E97C巻, 11号, pp.1112-pp.1116, NOV 2014
  17. Multi-Slot Stack-Type Ring Resonator for High Sensitivity Biosensor and Low Voltage Optical Modulator, 10th Int. Conf. on Group IV Photonics, pp.9-pp.10, 201308
  18. Silicon Ring Optical Modulator with p/n Junctions Arranged along Waveguide for Low-Voltage Operation, JAPANESE JOURNAL OF APPLIED PHYSICS, 51巻, 4号, APR 2012
  19. Electrical Property of DNA Field-Effect Transistor: Charge Retention Property, JAPANESE JOURNAL OF APPLIED PHYSICS, 51巻, 4号, APR 2012
  20. Gating electrical transport through DNA molecules that bridge between silicon nanogaps, NANOSCALE, 4巻, 6号, pp.1975-pp.1977, 2012
  21. Strain imaging of a Cu2S switching device, CURRENT APPLIED PHYSICS, 11巻, 6号, pp.1364-pp.1367, NOV 2011
  22. Sensitivity Improvement of Biosensors Using Si Ring Optical Resonators, JAPANESE JOURNAL OF APPLIED PHYSICS, 50巻, 4号, APR 2011
  23. Detection of Antigen-Antibody Reaction Using Si Ring Optical Resonators Functionalized with an Immobilized Antibody-Binding Protein, JAPANESE JOURNAL OF APPLIED PHYSICS, 50巻, 4号, APR 2011
  24. A Study of Mach-Zehnder Interferometer Type Optical Modulator Applicable to an Accelerometer, JAPANESE JOURNAL OF APPLIED PHYSICS, 50巻, 4号, APR 2011
  25. Design and Simulation of Silicon Ring Optical Modulator with p/n Junctions along Circumference, JAPANESE JOURNAL OF APPLIED PHYSICS, 50巻, 4号, APR 2011
  26. Selective Detection of Antigen-Antibody Reaction Using Si Ring Optical Resonators, JAPANESE JOURNAL OF APPLIED PHYSICS, 49巻, 4号, 2010
  27. Reduction in Operation Voltage of Silicon Ring Optical Modulator Using High-k (Ba,Sr)TiO3 Cladding Layer, JAPANESE JOURNAL OF APPLIED PHYSICS, 49巻, 4号, 2010
  28. Fabrication of Si Nanowire Field-Effect Transistor for Highly Sensitive, Label-Free Biosensing, JAPANESE JOURNAL OF APPLIED PHYSICS, 48巻, 6号, JUN 2009
  29. Optical modulator using metal-oxide-semiconductor type Si ring resonator, OPTICAL REVIEW, 16巻, 3号, pp.247-pp.251, MAY 2009
  30. Si Ring Optical Resonators for Integrated On-Chip Biosensing, JAPANESE JOURNAL OF APPLIED PHYSICS, 48巻, 4号, APR 2009
  31. Characterization of Ge Photodiodes Fabricated on Vicinal Si Substrate, JAPANESE JOURNAL OF APPLIED PHYSICS, 48巻, 4号, APR 2009
  32. Magneto-optic effect in amorphous Bi3Fe5O12 waveguides sputtered at room temperature, JAPANESE JOURNAL OF APPLIED PHYSICS, 47巻, 4号, pp.2915-pp.2920, APR 2008
  33. Photoelastic effect in silicon ring resonators, JAPANESE JOURNAL OF APPLIED PHYSICS, 47巻, 4号, pp.2910-pp.2914, APR 2008
  34. Imprint property of optical Mach-Zehnder interferometers using (Ba,Sr)TiO3 sputter-deposited at 450 degrees C, JAPANESE JOURNAL OF APPLIED PHYSICS, 47巻, 4号, pp.2897-pp.2901, APR 2008
  35. Fabrication of tunneling dielectric thin-film transistor with very thin SiNx films onto source and drain, IEICE ELECTRONICS EXPRESS, 4巻, 14号, pp.442-pp.447, JUL 25 2007
  36. Transient response in monolithic Mach-Zehnder optical modulator using (Ba,Sr)TiO3 film sputtered at low temperature on silicon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46巻, 4B号, pp.2462-pp.2466, APR 2007
  37. Compact multimode optical ring resonators for interconnection on silicon chips, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46巻, 4B号, pp.2364-pp.2368, APR 2007
  38. Effect of H-2 addition during Cu thin-film sputtering, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45巻, 12号, pp.9058-pp.9062, DEC 2006
  39. Optical properties of amorphous Ba0.7Sr0.3TiO3 thin films obtained by metal organic decomposition technique, THIN SOLID FILMS, 515巻, 4号, pp.2326-pp.2331, DEC 5 2006
  40. Fabrication of spin-coated optical waveguides for optically interconnected LSI and influence of fabrication process on underlying metal-oxide-semiconductor capacitors, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45巻, 4B号, pp.3498-pp.3503, APR 2006
  41. Design and simulation of ring resonator optical switches using electro-optic materials, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45巻, 4B号, pp.3493-pp.3497, APR 2006
  42. Structural and optical properties of electro-optic material: Sputtered (Ba,Sr)TiO3, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45巻, 4B号, pp.3488-pp.3492, APR 2006
  43. Groove-buried optical waveguides based on metal organic solution-derived amorphous Ba0.7Sr0.3TiO3 thin films, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45巻, 4B号, pp.3482-pp.3487, APR 2006
  44. Monolithically integrated optical modulator based on polycrystalline Ba0.7Sr0.3TiO3 thin films, APPLIED PHYSICS LETTERS, 88巻, 16号, APR 17 2006
  45. Fabrication of high-density diamond nanotips by electron beam lithography, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45巻, 3A号, pp.1771-pp.1774, MAR 2006
  46. Plasma-based ion implantation sterilization technique and ion energy estimation, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 23巻, 4号, pp.1018-pp.1021, JUL-AUG 2005
  47. Mechanism of anomalous behavior of metal-oxide-semiconductor capacitors contaminated with organic molecules, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44巻, 3号, pp.1208-pp.1212, MAR 2005
  48. Evaluation of front-opening unified pod with attached UV/photocatalyst cleaning unit, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44巻, 2号, pp.1130-pp.1131, FEB 2005
  49. 新規変調プラズマによるSiH4/H2プラズマCVDリアクター内のダスト微粒子の抑制, エアロゾル研究, 20巻, 3号, pp.231-pp.237, 20050901
  50. Carrier mobility in metal-oxide-semiconductor field effect transistor with atomic-layer-deposited Si-nitride gate dielectrics, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 44巻, 28-32号, pp.L903-pp.L905, 2005
  51. Contact-hole etching with NH3-added C5F8 pulse-modulated plasma, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44巻, 9A号, pp.6476-pp.6480, SEP 2005
  52. Structure and optical band-gap energies of Ba0.5Sr0.5TiO3 thin films fabricated by RF magnetron plasma sputtering, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44巻, 12号, pp.8507-pp.8511, DEC 2005
  53. SiO2 hole etching using perfluorocarbon alternative gas with small global greenhouse effect, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43巻, 6A号, pp.3586-pp.3589, JUN 2004
  54. Growth and electrical properties of atomic-layer deposited ZrO2/Si-nitride stack gate dielectrics, JOURNAL OF APPLIED PHYSICS, 95巻, 2号, pp.536-pp.542, JAN 15 2004
  55. Particle formation and trapping behavior in a TEOS/O-2 plasma and their effects on contamination of a Si wafer, AEROSOL SCIENCE AND TECHNOLOGY, 38巻, 2号, pp.120-pp.127, FEB 2004
  56. Particle Formation and Trapping Behavior in a TEOS/O2 Plasma and Their Effects on Contamination of a Si Wafer, Aerosol Sci. Techn., 38巻, 2号, pp.120-pp.127, 20040201
  57. Investigation of surface contamination on silicon oxide after hydrofluoric acid etching by noncontact capacitance method, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42巻, 12号, pp.7601-pp.7602, DEC 2003
  58. Organic contamination dependence of process-induced interface trap generation in ultrathin oxide metal oxide semiconductor transistors, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42巻, 12A号, pp.L1429-pp.L1432, DEC 1 2003
  59. Compact branched optical waveguides using high-index-contrast stacked structure, OPTICAL REVIEW, 10巻, 5号, pp.357-pp.360, SEP-OCT 2003
  60. Evaluation of surface contamination by noncontact capacitance method under UV irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42巻, 9A号, pp.5837-pp.5843, SEP 2003
  61. Comparative studies of perfluorocarbon alternative gas plasmas for contact hole etch, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42巻, 9A号, pp.5759-pp.5764, SEP 2003
  62. High quality atomic-layer-deposited ultrathin Si-nitride gate dielectrics with low density of interface and bulk traps, APPLIED PHYSICS LETTERS, 83巻, 2号, pp.335-pp.337, JUL 14 2003
  63. Phosphorus-assisted low-energy arsenic implantation technology for N-channel metal-oxide-semiconductor field-effect transistor source/drain formation process, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42巻, 5A号, pp.2654-pp.2659, MAY 2003
  64. Carrier mobility in p-MOSFET with atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics, IEEE ELECTRON DEVICE LETTERS, 24巻, 7号, pp.472-pp.474, JUL 2003
  65. Excellent Contact-Hole Etching with NH3 Added C5F8 Pulse-Modulated Plasma, Extend. Abst. of the Int. Conf. on Solid State Devices and Materials, pp.454-pp.455, 20030901
  66. Organic Contamination Dependence of Process Induced Interface Trap Generation in Ultrathin Oxide Metal Oxide Semiconductor Transistors, Jpn. J. Appl. Phys., 42巻, 12A号, pp.L1429-L1432, 20031201
  67. Compact Branched Optical Waveguides Using High-Index-Contrast Stacked Structure, Optical Review, 10巻, 5号, pp.357-pp.360, 20031001
  68. Evaluation of Surface Contamination by Noncontact Capacitance Method under UV Irradiation, Jpn. J. Appl. Phys., 42巻, 9A号, pp.5837-pp.5843, 20030901
  69. Atomic-layer-deposited silicon-nitride/SiO2 stack - a highly potential gate dielectrics for advanced CMOS technology, MICROELECTRONICS RELIABILITY, 42巻, 12号, pp.1823-pp.1835, DEC 2002
  70. Atomic-layer deposition of ZrO2 with a Si nitride barrier layer, APPLIED PHYSICS LETTERS, 81巻, 15号, pp.2824-pp.2826, OCT 7 2002
  71. High-quality NH3-annealed atomic layer deposited Si-nitride/SiO2 stack gate dielectrics for sub-100 nm technology generations, SOLID-STATE ELECTRONICS, 46巻, 10号, pp.1659-pp.1664, OCT 2002
  72. Influence of organic contaminant on trap generation in thin SiO2 of metal-oxide-semiconductor capacitors, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 41巻, 7A号, pp.4750-pp.4753, JUL 2002
  73. Low-temperature formation of highly reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal-oxide-semiconductor technology, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 20巻, 4号, pp.1406-pp.1409, JUL-AUG 2002
  74. Conduction mechanism of Si single-electron transistor having a one-dimensional regular array of multiple tunnel junctions, APPLIED PHYSICS LETTERS, 81巻, 4号, pp.733-pp.735, JUL 22 2002
  75. Fabrication of Si single-electron transistors having double SiO2 barriers, APPLIED PHYSICS LETTERS, 80巻, 24号, pp.4617-pp.4619, JUN 17 2002
  76. Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal-oxide-semiconductor structures, APPLIED PHYSICS LETTERS, 80巻, 21号, pp.3952-pp.3954, MAY 27 2002
  77. Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires, JOURNAL OF APPLIED PHYSICS, 91巻, 8号, pp.5213-pp.5220, APR 15 2002
  78. Low thermal-budget ultrathin NH3-annealed atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics with excellent reliability, IEEE ELECTRON DEVICE LETTERS, 23巻, 4号, pp.179-pp.181, APR 2002
  79. NH3-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability, APPLIED PHYSICS LETTERS, 80巻, 7号, pp.1252-pp.1254, FEB 18 2002
  80. An Effective Method for Obtaining Interface Trap Distribution in MOS capacitors with Tunneling Gate Oxides, Proceedings 2002 IEEE Int. Conf. on Semiconductor Electronics (ICSE 2002), pp.402-pp.406, 20021201
  81. A comparative study of bulk and interface trap generation in ultrathin SiO2 and atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics, Forth Int. Symposium on Control of Semiconductor Interface (ISCSI-IV), pp.A6-3-A6-3, 20021001
  82. Atomic-layer deposition of ZrO2 with a Si nitiride barrier layer, 1994 International Conf. on Solid State Devices and Materials, pp.452-pp.453, 20020901
  83. Time-dependent breakdown of ultrathin SiO2 gate dielectrics under static and dynamic stress, Abst. 2nd ECS Int. Semiconductor Technology Conf., pp.Abstract No.71, 20020901
  84. A novel method for extracting the energy distribution of Si/SiO2 interface traps in ultrathin oxide MOS structures, the Second IEEE Conference on Nanotechnology, 20020801
  85. Atomic-layer-deposition of Si nitride and ZrO2 for gate dielectrics, Abst. AVS Topical Conference on Atomic Layer Deposition (ALD 2002), pp.6-6, 20020801
  86. Atomic-layer-deposited silicon-nitride/SiO2 stack ---- a highly potential gate dielectrics for advanced CMOS technology, Microelectronics Reliability, 42巻, pp.1823-pp.1835, 20021201
  87. Response to "Comment on ’Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal-oxide-semiconductor structures’" [Appl. Phys. Lett. 81, 3681(2002)], Appl. Phys. Lett=, 81巻, 19号, pp.3683-pp.3684, 20021101
  88. Atomic-layer deposition of ZrO2 with a Si nitiride barrier layer, Appl. Phys. Lett=, 81巻, 15号, pp.2824-pp.2826, 20021001
  89. Low-temperature formation of highly-reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal-oxide-semiconductor technology, J. Vac. Sci. & Technol. B, 20巻, 4号, pp.1406-pp.1409, 20020701
  90. ウェハ保管環境のMOSデバイス特性への影響, エアロゾル研究, 17巻, 2号, pp.96-pp.104, 20020401
  91. High quality NH3-annealed atomic Layer Deposited Si-nitride/SiO2 Stack Gate Dielectrics for Sub-100nm Technology Generations, Solid State Electron, 46巻, pp.1657-pp.1662, 20020401
  92. Conduction mechanism of Si single-electron transistors having an one-dimensional regular array of multiple tunnel junctions, Appl. Phys. Lett=, 81巻, 4号, pp.733-pp.735, 20020701
  93. Fabrication of Si single-electron transistors having double SiO2 barriers, Appl. Phys. Lett=, 80巻, 24号, pp.4617-pp.4619, 20020601
  94. Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal-oxide-semiconductor structures, Appl. Phys. Lett=, 80巻, 21号, pp.3952-pp.3954, 20020501
  95. Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires, J. Appl. Phys., 91巻, 8号, pp.5213-pp.5220, 20020401
  96. Low thermal-budget ultrathin NH3-annealed atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics with excellent reliability, IEEE Electron Device Lett., 23巻, 4号, pp.179-pp.181, 20020401
  97. NH3-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability, Appl. Phys. Lett=, 80巻, 7号, pp.1252-pp.1254, 20020201
  98. Evaluation of Surface Contamination by Noncontact Capacitance Method under UV Irradiation, 1994 International Conf. on Solid State Devices and Materials, pp.724-pp.725, 20020901
  99. ウェハ保管環境のMOSデバイス特性への影響, エアロゾル研究, 17巻, 2号, pp.96-pp.104, 20020601
  100. Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires, J. Appl. Phys. Lett., 91巻, 8号, pp.5213-pp.5220, 20020401
  101. Influence of Organic Contaminant on Trap Generation in Thin SiO2 of Metal-Oxide-Semiconductor Capacitors, Jpn. J. Appl. Phys., 41巻, 7A号, pp.4750-pp.4753, 20020701
  102. Soft-breakdown-suppressed ultrathin atomic-layer-deposited silicon-nitride/SiO2 stack gate dielectrics for advanced complementary metal-oxide-semiconductor technology, APPLIED PHYSICS LETTERS, 79巻, 21号, pp.3488-pp.3490, NOV 19 2001
  103. Influence of organic contaminant on breakdown characteristics of MOS capacitors with thin SiO2, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40巻, 4B号, pp.2849-pp.2853, APR 2001
  104. Effect of light irradiation on native oxidation of silicon surface, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40巻, 4A号, pp.2223-pp.2224, APR 2001
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  137. Comparative Studies of PFC alternative Gas Plasmas for Contact Hole Etch, Proc. of 22th Symp. on Dry Process (2000), pp.199-pp.204, 20001001
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  139. Low-Temperature Selective Deposition of Silicon by Time-Modulation Exposure of Disilane and Formation of Silicon Nanowires, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.202-pp.203, 20000401
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  144. Calculation of Electrical Properties of Novel Double-Barrier Metal Oxide Semiconductor Transistor, Jpn. J. Appl. Phys., 38巻, 1B号, pp.399-pp.402, 19990401
  145. Evaluation of 300 mm Wafer Boxes with UV/Photoelectron Cleaning Capability, Proc. Int. Symp. on Semicon. Manuf., pp.169-pp.172, 19990401
  146. Atomic-Layer Deposition of Silicon Nitride, J. Korean Physical Soc., 35巻, pp.S71-S75, 19990401
  147. Quantitative evaluation of dopant loss in 5-10 keV As ion implantation for low-resistive, ultrashallow source/drain formation, Jpn. J. Appl. Phys., 38巻, 4B号, pp.2324-pp.2328, 19990401
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  150. Calculation of electrical properties of novel double-barrier MOS transistors, Abst. of Intern. Symp. on Formation= Physics and Device Application of Quantum Dot Structures, pp.10-10, 19980401
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  152. Reduction of Gaseous Contamination by UV/Photoelectron Method, IEEE Trans. Semicond. Manuf., 11巻, 1号, pp.9-pp.12, 19980401
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  154. An Experimental Pattern Recognition System Using Bidirectional Optical Bus Lines, Jpn. J. Appl. Phys., 37巻, 3B号, pp.1116-pp.1121, 19980401
  155. Effect of UV/Photoelectron and Photocatalyst Cleaning on the Reliability of Thin Gate Oxides, Proc. of the 44th Meeting of the Institute of Environm. Sci. and Tech., pp.210-pp.214, 19980401
  156. Self-Limiting Atomic-Layer Selective Deposition of Silicon Nitride by Temperature-Controlled Method, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.22-pp.23, 19980401
  157. Design and Fabrication of Optically-Interconnected Kohonen Net for High-Speed Pattern Recognition, Proc. Int. Symp. on Future of Intellectual Integrated Electronics, pp.453-pp.457, 19980401
  158. Atomic-Layer Selective Deposition of Silicon Nitride on Hydrogen-Terminated Si Surfaces, Applied Surface Science, 130-132巻, pp.352-pp.356, 19980401
  159. Dopant loss origins of low energy implanted arsenic and antimony for ultra shallow junction formation, Mat. Res. Soc. Symp. Proc.=, 532巻, pp.23-pp.28, 19980401
  160. Quantitative Evaluation of Dopant Loss in Low Energy As Implantation for Low-Resistive, Ultra Shallow Source/Drain Formation, 1994 International Conf. on Solid State Devices and Materials, pp.18-pp.19, 19980801
  161. Evaluation of Stress Induced Deffects due to Recessed LOCOS Process, Abst. of IUMRS Int. Conf. on Electronic Materials 1998 (IUMRS-ICEM-98), pp.79, 19980801
  162. New Ar-plasma cleaning process for reduction of Al/TiSi2 contact resistance, Jpn. J. Appl. Phys., 37巻, 11号, pp.5902-pp.5905, 19981101
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  164. A study of electrical characteristics improvements in sub-0.1 mu m gate length MOSFETs by low temperature operation, IEICE Trans. Electron., E81-C巻, 12号, pp.1913-pp.1917, 19981201
  165. Threshold Voltage Fluctuation Induced by Direct Tunnel Leakage Current through 1.2-2.8 nm Thick Gate Oxides for Scaled MOSFETs, Tech. Digest Int. Electron Devices Meeting, pp.pp. 919--922, 19981201
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  168. Atomic Layer Controlled Deposition of Silicon Nitride and In Situ Growth Observation by Infrared Reflection Absorption Spectroscopy, Applied Surface Science, 112巻, pp.75-pp.81, 19970401
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  171. Reliability Evaluation of Ultrathin Gate Oxides Grown on Si Wafers Stored in Clean Stocker with a UV/Photoelectron Source, Proc. Int. Symp. on Semicon. Manuf., pp.F-5-F-8, 19970401
  172. Atomic-Layer Selective Deposition of Silicon Nitride on Hydrogen-Terminated Si Surfaces, Abst. 4th Int. Symp. on Atomically Controlled Surf. and Interfaces, pp.314-pp.315, 19970401
  173. Experimental Pattern Recognition System using Bidirectional Optical Bus Lines, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.388-pp.389, 19970401
  174. Heteroepitaxial Layer Overgrowth of GaP on Structured Silicon Surfaces, Abst. 191st Electrochem. Soc. Meeting, pp.499-499, 19970401
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  177. Photo-Electric Crossbar Switches for Multi-Processor Systems, Applications of Photonics Technology, pp.505-pp.510, 19970401
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  179. UV/光電子を用いた減圧下での微粒子除去, 空気清浄, 34巻, 1号, pp.11-pp.16, 19960501
  180. High-Efficiency Micromirrors and Branched Optical Waveguides on Silicon Chip, Jpn. J. Appl. Phys., 35巻, 2B号, pp.941-pp.945, 19960401
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  182. Control of Fine Particulate and Gaseous Contaminants by UV/Photoelectron Method, IEICE Trans. Electron., E79-C巻, 3号, pp.306-pp.311, 19960401
  183. High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.643-pp.645, 19960401
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  195. Optical Interconnection on Silicon LSI Chips, Proceedings of Photonics West, 2400巻, pp.89-pp.93, 19950401
  196. GaAs/Si Optoelectronic Design and Development at Hiroshima University, International Workshop: Semiconductor Characterization, pp.1-pp.5, 19950401
  197. Fabrication and Evaluation of Three Dimensional Optically Coupled Common Memory, Jpn. J. Appl. Phys., 34巻, 2B号, pp.1246-pp.1248, 19950201
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  199. Test Chip Fabrication of 3D Optically Coupled Common Memory for Parallel Processing System, Proc. Photonics West, 2400巻, pp.8-pp.15, 19950401
  200. GaAs/Si Optoelectronic Design and Development at Hiroshima Universit, Proc. Intern. Workshop of Semicon. Character.(Gaithersburg= USA), pp.599-pp.604, 19950401
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  202. Single-Chip Integration of Light-Emitting Diode, Waveguide and Micromirrors, Jpn. J. Appl. Phys., 34巻, 2B号, pp.1282-pp.1285, 19950401
  203. High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.830-pp.832, 19950401
  204. Optically Interconnected Kohonen Net for Pattern Recognition, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.1075-pp.1076, 19950401
  205. Valence Band Alignment of Ultra-Thin SiO2/Si Interfaces as Determined by High Resolution X-Ray Photoelectron Spectroscopy, Mat. Res. Soc. Symp. Proc.=, 386巻, pp.249-pp.254, 19950401
  206. Valence Band Alignment at Ultra-Thin SiO2/Si(100) Interfaces Determined by High-Resolution X-Ray Photoelectron Spectroscopy, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.28-pp.30, 19950401
  207. Control of Fine Particulate and Gaseous Contaminants by UV/Photoelectron Method, Proc. Int. Symp. on Semicon. Manuf., pp.60-pp.63, 19950401
  208. Optical Waveguides on Si Chip, J. Vac. Sci. Technol. A, 13巻, 3号, pp.629-pp.635, 19950401
  209. Determination of Valence Band Alignment at Ultra-Thin SiO2/Si Interfaces by H, Jpn. J. Appl. Phys., 34巻, 6A号, pp.L653-L656, 19950401
  210. Fine Particulate Contaminant Control by the UV/Photoelectron Method under a Low Pressure Condition, Review of Scientific Instruments, 66巻, 11号, pp.5348-pp.5351, 19950401
  211. Optical Interconection on Silicon LSI Chips, Proceesing of Photonics West’95, 19950401
  212. High-Efficiecy Micromirrors and Branched Optical Waveguides on Si Chips, Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials (SSDM’95)=, pp.830, 19950901
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  216. Single-Chip Integration of Light-Emitting Diode, Waveguide and Micormirrors, Jpn. J. Appl. Phys., 34巻, 2B号, pp.pp.1282-1285, 19950401
  217. Micron-Size Optical Waveguide for Optoelectronic Integrated Circuits, Jpn. J. Appl. Phys., 33巻, 1B号, pp.822-pp.826, 19940401
  218. New RAM-Bus Memory System with Interchip Optical Interconnection, Jpn. J. Appl. Phys., 33巻, 1B号, pp.848-pp.851, 19940401
  219. Fundamental Characteristics of Optically Coupled Three-Dimensional Common Memory, Optoelectronics Devices and Technologies, 9巻, 1号, pp.119-pp.130, 19940401
  220. He Ion Beam Induced Arsenic Atom Displacement Studied by Medium-Energy Ion Spectroscopy, Mat. Res. Soc. Symp. Proc.=, 316巻, pp.123-pp.128, 19940401
  221. The Performance Study of Ion Implanter Based Medium Energy Ion Spectroscopy with Solid State Detector, Mat. Res. Soc. Symp. Proc.=, 324巻, pp.409-pp.414, 19940401
  222. Single Chip Integration of LED, Waveguide and Micromirrors, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.90-pp.92, 19940401
  223. Fabrication and Evaluation of Three-Dimensional Optically-Coupled Common Memory, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.965-pp.966, 19940401
  224. Evaluation of Plasma-Induced Damage by Medium Energy Ion Scattering, Jpn. J. Appl. Phys., 33巻, 4B号, pp.2179-pp.2183, 19940401
  225. Implanted Antimony Precipitation in Silicon Studied by Medium-Energy Ion Scattering, Jpn. J. Appl. Phys., 33巻, 12B号, pp.L1799-L1802, 19940401
  226. Single Chip Integration of LED, Waveguide and Micormirrors, 1994 Intern. Conf. on Solid State Devices and Materials (Yokohama= Aug. 23-26= 1994), pp.pp. 90-92, 19940801
  227. Fabrication and Evaluation of Three-Dimensional Optically-Coupled Common Memory, 1994 International Conf. on Solid State Devices and Materials, pp.965-pp.966, 19940801
  228. Helium Ion Beam Induced Arsenic Atom Displacement Studied by Medium-Energy Ion Spectroscopy, Mat. Res. Soc. Symp. Proc.=, 316巻, pp.123, 19940401
  229. Influence of Sputtering Geometry on Crystallinity of Al(110) Thin Films on Offset (100)Si, Jpn. J. Appl. Phys., 32巻, 2B号, pp.L283-L286, 19930401
  230. Medium Energy Ion Spectroscopy of Very Thin As Implanted Layer in Si, Digest of Papers of 6th Intern. MicroProcess Conf., pp.194-pp.195, 19930401
  231. Effect of Hydrogen and Bias on Single-Crystal Al Growth on Vicinal Si by DC Magnetron Sputtering, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.546-pp.548, 19930401
  232. Medium Energy Ion Spectroscopy of Ultra-Thin As+ Implanted Layers: The Effect of Reversible Site Change of As Atoms, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.582-pp.584, 19930401
  233. Micron-Size Optical Waveguide for Optoelectronic Integrated Circuits, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.1047-pp.1049, 19930401
  234. New RAM-Bus Memory System with Interchip Optical Interconnection, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.673-pp.675, 19930401
  235. Evaluation of Plasma-Induced Damage by Medium Energy Ion Scattering, Porc. of 15th Symp. on Dry Process, pp.73-pp.78, 19930401
  236. Medium-Energy Ion Spectroscopy Using Ion Implanter, Jpn. J. Appl. Phys., 32巻, 7A号, pp.L962-L965, 19930401
  237. 3 V Operation of 70 nm Gate Length MOSFET with New Double Punchthrough Stopper Structure, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.490-pp.492, 19920401
  238. Parallel Data Inspection Operation in Three Dimensional Content Addressable Memory with Optical Interconnection, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.592-pp.594, 19920401
  239. Hot Carrier Degradation in 73 nm Gate Length MOSFET’s with New Double Punchthrough Stopper Structure, Tech. Digest Int. Electron Devices Meeting, pp.1019-pp.1022, 19920401
  240. 光インターコネクションを有する3次元メモリLSI, 電子情報通信学会論文誌D・I, J75-C-1巻, 5号, pp.257-pp.268, 19920501
  241. Parallel Data Inspection Operation in Three-Dimensional Content Addressable Memory with Optical Interconnection, 1992 Intern. Conf. on Solid State Devices and Materials (Tsukuba= Aug. 26-28= 1992), pp.pp. 592-594, 19920801
  242. Atomic Layer Growth of Bi-Sr-Ca-Cu-O by Molecular Beam Epitaxy Using Ozone under UV Irradiation, Jpn. J. Appl. Phys., 30巻, 1B号, pp.L106-L109, 19910401
  243. Design of Optically Coupled Three Dimensional Content Addressable Memory, Jpn. J. Appl. Phys., 30巻, 3A号, pp.L338-L341, 19910401
  244. Single Crystal Growth of Al(110) on Si(100) by Ultra-High-Vacuum Sputtering System, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.757-pp.758, 19910401
  245. Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Superconducting Films by Molecular Beam Epitaxy, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.435-pp.437, 19910401
  246. Coupled Monte Carlo-Energy Relaxation Analysis of Hot-Carrier Light Emission in MOSFET’s, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.459-pp.461, 19910401
  247. A Novel Fabrication Technology for Optically Interconnected Three Dimensional LSI by Wafer Aligning and Bonding Technique, Int. Semicon. Device Research Symposium, pp.327-pp.330, 19910401
  248. Single-Crystal Growth of Al(110) on Vicinal Si(100) in Ultra-High-Vacuum Sputtering System, Jpn. J. Appl. Phys., 30巻, 12B号, pp.3685-pp.3690, 19910401
  249. Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Superconducting Films by Molecular Beam Epitaxy, Jpn. J. Appl. Phys., 30巻, 12B号, pp.3900-pp.3903, 19910401
  250. Coupled Monte Carlo-Energy Relaxation Analysis of Hot-Carrier Light Emission in Metal Oxide Semiconductor Field Effect Transistors, Jpn. J. Appl. Phys., 30巻, 12B号, pp.3666-pp.3670, 19910401
  251. Chemical Bonding Features of Fluorine and Boron in BF2+-Ion-Implanted Si, Extend. Abst. of Conf. on Solid State Devices and Materials, pp.421-pp.424, 19900401
  252. Design of Optically Coupled Three Dimensional Content Addressable Memory, Extend. Abst. of Conf. on Solid State Devices and Materials, pp.765-pp.768, 19900401
  253. Atomic Layer Growth of Bi-Sr-Ca-Cu-O by Molecular Beam Epitaxy Using Ozone under UV Irradiation, Extend. Abst. of Conf. on Solid State Devices and Materials, pp.929-pp.932, 19900401
  254. Two-Dimensional Device Simulation for Poly-Silicon Thin Film Transistor, 1994 International Conf. on Solid State Devices and Materials, pp.1003-pp.1006, 19900401
  255. Two-Dimensional Device Simulation for Avalanche Induced Short Channel Effect in Poly-Si TFT, Tech. Digest Int. Electron Devices Meeting, pp.859-pp.862, 19900401
  256. Chemical Bonding Features of Fluorine and Boron in BF2+-Ion-Implanted Si)., Jpn. J. Appl. Phys., 29巻, 12号, pp.L2349-L2352, 19900401
  257. Two-Dimensional Device Simulation for Poly-Silicon Thin Film Transistor, Jpn. J. Appl. Phys., 29巻, 12号, pp.L2388-L2391, 19900401
  258. Chemical Bonding Features of Fluorine and Boron in BF2+-Ion-Implanted Si, Jpn. J. Appl. Phys., 29巻, pp.pp.L2349-L2352, 19900401
  259. Chemical Bonding Features of Fluorine in BF2+ implanted Si, the 3rd Symp. on Ion Sources and Ion-Assisted Technology: Special Seminar (Tokyo= June 4-6= 1990), pp.pp. 187 - 194, 19900601
  260. The Chemical Bonding Features of Fluorine and Boron in BF2+ Ion Implanted Si, the 22nd Conf. on Solid State Devices and Materials (Sendai= Aug. 22-24= 1990), pp.pp. 421 - 424, 19900801
  261. ★, Low-Temperature Selective Growth of GaAs by Alternately Supplying Molecular Beam Epitaxy, J. Cryst. Growth, 95巻, 1-4号, pp.32-pp.34, 19890401
  262. Lateral Control of Impurity-Induced Disordering of AlAs/GaAs Superlattice, Nuclear Instr. and Methods in Phys. Research, B39巻, 1-4号, pp.441-pp.444, 19890401
  263. Antiphase Defect Reduction Mechanism in MBE Grown GaAs on Si, Mat. Res. Soc. Symp. Proc.=, 116巻, pp.261-pp.263, 19890401
  264. Anisotropic Lateral Growth of GaAs in Molecular Beam Epitaxy, Proc. 16th Int. Symp. on GaAs and Related Compounds, pp.147-pp.152, 19890401
  265. Solid-Phase Epitaxy of Molecular Beam Deposited Amorphous GaAs on Si, Appl. Phys. Lett=, 54巻, 25号, pp.2562-pp.2564, 19890401
  266. Atomic-Layer Deposition of Silicon Nitride, Abst. of IUMRS Int. Conf. on Electronic Materials, pp.78-78, 19880401
  267. Low Temperature Growth of GaAs on Si by Migration Enhanced Molecular Beam Epitaxy, Extend. Abst. of Conf. on Solid State Devices and Materials, pp.147-pp.150, 19870401
  268. Solid-Phase Crystal Growth of Molecular-Beam-Deposited Amorphous GaAs, J. Appl. Phys., 62巻, 5号, pp.1808-pp.1814, 19870401
  269. Preparation of Y-Ba-Cu-O Thin Films by RF-Magnetron Sputtering, Jpn. J. Appl. Phys., 26巻, 9号, pp.L1484-L1486, 19870401
  270. レーザ誘起エッチング及びCVD, レーザー研究, 13巻, 2号, pp.148-pp.155, 19850201
  271. A New Method of Measuring Internal Stress in Thin Films Deposited on Silicon by Raman Spectroscopy, Jpn. J. Appl. Phys., 24巻, 1号, pp.866-pp.867, 19850401
  272. Laser-Assisted Chemical Vapor Deposition of Stoichiometric Boron Nitrid, Extend. Abst. of Conf. on Solid State Devices and Materials, pp.169-pp.172, 19850401
  273. Anisotropic Etching of SiO2 by Excimer Laser Irradiation, Porc. of Dry Process Symp., pp.39-pp.43, 19850401
  274. Laser-Induced Photochemical Etching of GaAs and Its Characterization by X-Ray Photoelectron Spectroscopy and Luminescence, Proc. 16th Int. Symp. on GaAs and Related Compounds, pp.325-pp.330, 19850401
  275. ★, Laser-Induced Photochemical Etching of SiO2 Studied by X-Ray Photoelectron Spectroscopy, Appl. Phys. Lett=, 47巻, 4号, pp.389-pp.391, 19850401
  276. Characterization of Photochemical Processing, J Vac Sci Technol B, 3巻, 5号, pp.1445-pp.1449, 19850401
  277. Dependence of Interface State Density on the Atomic Roughness at the Si/SiO2 Interface, Surf. Sci., 142巻, 1-3号, pp.545-pp.555, 19840401
  278. Laser-Induced Chemical Dry Etching of SiO2, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.451-pp.454, 19840401
  279. Granular Si-Rich Oxide and Si-Rich Nitride Films Deposited by Plasma CVD, Porc. of Dry Process Symp., pp.35-pp.40, 19830401
  280. Characterization of Plasma-Enhanced Chemically-Vapor-Deposited Silicon-Rich Silicon Dioxide/Thermal Silicon Dioxide Dual Dielectric System, J. Appl. Phys., 54巻, 12号, pp.7058-pp.7065, 19830401
  281. Interface Barrier Heights in Metal-Aluminum Nitride-Silicon Structure by Internal Photoemission, J. Appl. Phys., 53巻, 5号, pp.3694-pp.3697, 19820401
  282. Internal Photoemission in the Anodic Oxide/GaAs Interface, Appl. Phys. Lett=, 38巻, 2号, pp.97-pp.99, 19810401
  283. ★, Electron Spin Resonance in Discharge-Produced Silicon Nitride, Jpn. J. Appl. Phys., 20巻, 1号, pp.L35-L37, 19810401
  284. Optical Emission Spectroscopy of the SiH4-NH3-H2 Plasma During the Growth of Silicon Nitride, Jpn. J. Appl. Phys., 20巻, 2号, pp.L117-L120, 19810401
  285. Characterization of Plasma Deposited SiN Films, Proc. of Symp. on Plasma Processing, pp.13-pp.25, 19810401
  286. ★, Characterization of Plasma-Deposited Silicon Nitride Films, J. Appl. Phys., 51巻, 10号, pp.5470-pp.5474, 19800401
  287. GaAs MOS Structures with Al2O3 Grown by Molecular Beam Reaction under UV Excitation, Thin Solid Films, 56巻, 1-2号, pp.81-pp.88, 19790401
  288. GaAs MOS Structures with Al2O3 Grown by Molecular Beam Reaction, Surface Science, 86巻, 8号, pp.835-pp.840, 19790401
  289. Surface States in GaAs Tunnel MIS Structures, Phys. Stat. Sol. (a), 42巻, 2号, pp.483-pp.488, 19770401

著書等出版物

  1. 2001年06月, シリコン熱酸化膜のホットエレクトロン耐性に及ぼす有機ガス汚染の影響 , 社団法人 電子情報通信学会, 2001年, 06, 調査報告書, 共著, 横山 新 芝原 健太郎 中島 安理 吉川 公麿 角南英夫 , 6
  2. 1998年04月, 二重障壁極微細MOSトランジスタの電気伝導 , 電子情報通信学会, 1998年, 04, 調査報告書, 共著, 羽田野剛司 野村明弘 吉田昌義 中島 安理 芝原 健太郎 横山 新 , 5
  3. 2002年10月, クリーンルーム設計と運転・維持管理、第11章クリーンルームの技術動向と今後の展望 第1節スーパークリーンルーム , (株)情報機構、, 2002年, 10, 単行本(一般書), 共編著, 横山 新 藤井敏昭 , 12
  4. 2001年06月, p-MOSFETのための原子層成長Si窒化膜/SiO2スタックゲート絶縁膜の研究 , 社団法人 電子情報通信学会, 2001年, 06, 調査報告書, 共著, 吉元隆史 木寺俊郎 QuaziD.M.Khosru 中島 安理 横山 新 , 6
  5. 2002年06月, Bipolar Voltage Pulse Induced Current - A Means for Reliable Extraction of Interface Trap Distribution in Ultrathin Oxides MOS Structure , 電子情報通信学会, 2002年, 06, 調査報告書, 共著, quazi d.m.khosru 中島 安理 横山 新 , 6

招待講演、口頭・ポスター発表等

  1. Integrated Differential Si-Ring Resonator Biosensors for Selective Detection of Antigen-Antibody Reaction, 横山 新, 谷口智哉、池田 丈、黒田章夫, OPTICS & PHOTONICS International Congress 2016, 2016年05月17日, 招待, 英語, 横浜 パシフィコ横浜
  2. シリコンフォトニクスによる光スイッチおよびバイオセンサー, 横山 新, 東京都市大学 私立大学戦略的研究基盤形成支援事業「ゲルマニウムを基幹材料とするナノエレクトロニクス先端融合研究基盤の形成」キックオフシンポジウム, 2015年12月14日, 招待, 日本語, 東京都市大学総合研究所, 東京都市大学総合研究所 コンファレンスホール, Si光共振器(リングおよびフォトニック結晶)を用いた光スイッチおよびバイオセンサーに関する研究成果を紹介する。光スイッチは、p/n接合の順・逆バイアス動作、及び磁気光学材料Bi3Fe5O12 (BIG) を被着させた磁気応答型光スイッチ、及び差動型Siリング共振器バイオセンサーについて述べる。
  3. 集積化光バイオセンサ, 横山 新, 谷口智哉, 池田 丈, 黒田章夫, 応用物理学会第55回光波センシング技術研究会講演会, 2015年06月09日, 招待, 日本語, 応用物理学会光波センシング技術研究会, 東京 理科大学 神楽坂キャンパス 森戸記念館, シリコンリング共振器バイオセンサーに関する研究紹介, プレプリント, 講演予稿集
  4. Si Ring Resonator and Photonic Crystal Resonator Biosensors, Shin Yokoyama, Takeshi Ikeda, Akio Kuroda, Third International Symposium on Semiconductor Materials and Devices, 2015年02月04日, 通常, 英語, Anna University, India, Anna University, Chennai, India, Biosensors using Si Ring Resonator and Photonic Crystal Resonator are introduced., プレプリント
  5. 広島大学ナノデバイス・バイオ融合科学研究所の研究紹介, 横山 新, 中島 安理、黒木 伸一郎, 日本材料学会講演会, 2015年01月24日, 招待, 日本語, 広島大学東広島キャンパス学士会館, 広島大学ナノデバイス・バイオ融合科学研究所における材料関連の研究紹介, 発表資料
  6. Siリングおよびフォトニック結晶共振器バイオセンサー, 横山 新, 横山 新, 池田 丈, 黒田 章夫, 第22回シリコン・フォトニクス研究会, 2015年01月22日, 招待, 日本語, 電子情報通信学会シリコン・フォトニクス時限研究専門委員会, 東広島市, シリコンリングおよびフォトニック共振器バイオセンサーの紹介, プレプリント
  7. Optical Switches and Biosensors using Silicon Photonics, Shin Yokoyama, Yoshiteru Amemiya, Tetsuo Tabei, Takeshi Ikeda, and Akio Kuroda, 第75回応用物理学会秋季学術講演会, 2014年09月20日, 招待, 英語, 応用物理学会, 北海道大学, シリコンフォトニクスを用いたバイオセンサーおよび光スイッチの研究成果発表, プレプリント
  8. シリコンフォトニクスを用いた光共振器集積化バイオセンサー, 横山 新, 池田 丈, 黒田章夫, 電子情報通信学会, 2014年03月18日, 招待, 日本語, 電子情報通信学会, 新潟大学, シリコンリング共振器バイオセンサーの紹介, プレプリント, 予稿集
  9. ナノデバイス・バイオ融合科学研究所における バイオ関連研究の紹介, 横山 新, 吉川公麿,中島安理,小出哲士, 第11回プラズモニクスシンポジウム, 2014年01月24日, 招待, 日本語, プラズモニクス研究会, 広島大学東広島キャンパス, 広島大学ナノデバイス・バイオ融合科学研究所のバイオ関連の研究現状を紹介した。, プレプリント
  10. シリコンフォトニクスを用いた集積化バイオセンサー, 横山 新, 第3回フォトニックデバイス・応用技術研究会, 2013年10月09日, 招待, 日本語, 一般財団法人光産業技術振興協会, 上智大学, シリコンフォトニクスを利用したバイオセンサーの研究紹介
  11. Siリング光共振器を用いたバイオセンサ, 横山 新, 池田 丈,黒田章夫, 電子情報通信学会総合大会, 2011年03月14日, 招待, 日本語, 電子情報通信学会, 東京都市大学, Siリング光共振器を用いたバイオセンサについて発表した, 発表資料, 予稿集
  12. Silicon Nanodevices and Their Bio Application, Shin Yokoyama, T. Kikkawa, A. Nakajima, The 7th nano Bio Chemistry Symposium, Hirhoshima University, 2010年12月04日, 招待, 英語, Hiroshima University, 広島大学東広島キャンパス, シリコンナノデバイスとそのバイオ応用に関する発表, プレプリント, 予稿集
  13. LSI配線の課題と光配線, 横山 新, 雨宮嘉照, 電子情報通信学会研究会, 2010年11月29日, 招待, 日本語, 電子情報通信学会, 九州大学, 現在のLSIの問題点として,長距離(グローバル)金属配線技術の増大する配線遅延と消費電力を指摘し,その解決法として,伝送線路,定在波発振法,光配線を紹介した., プレプリント, 信学技法IEICE Technical Report CPM2010-128, ICD2010-87(2010-11). pp. 25-30.
  14. チップ内光配線, 横山 新, 電子情報通信学会総合大会, 2009年03月19日, 招待, 日本語, 電子情報通信学会, 愛媛大学, Siリング共振器を用いたチップ内光配線について報告した。, プレプリント, 信学技報
  15. LSI配線とシリコンフォトニクス, 横山 新, 2009年01月30日, 招待, 日本語
  16. LSI配線技術とシリコンフォトニクス, 横山 新, 2008年07月18日, 招待, 日本語
  17. LSI配線技術とシリコンフォトニクス, 横山 新, 2008年07月10日, 招待, 日本語
  18. LSI配線技術とシリコンフォトニクス, 横山 新, 2008年02月21日, 招待, 日本語
  19. ナノデバイスにおける薄膜成長技術の諸問題, 横山 新, 日本化学工学会, 2001年04月, 招待, 日本語
  20. Atomic-Layer Deposition of Silicon Nitride, 横山 新, "IUMRS Int. Conf. on Electronic Materials 1998 (IUMRS-ICEM-98) (Cheju, Korea)", 1998年08月, 招待, 英語
  21. Optical Waveguides on Si Chips, 横山 新, "The 41st National Symposium, American Vacuum Society (Denver, Colorado)", 1995年10月, 招待, 英語
  22. Three-Dimensional and Two-Dimensional Optical Interconnections in Si LSI, 横山 新, "International Research Workshop on Future Information Processing Technologies (Porvoo, Finland)", 1995年09月, 招待, 英語
  23. GaAs/Si Optoelectronic Design and Development at Hiroshima University, 横山 新, "Intern. Workshop of Semiconductor Characterization: Present Status and Future Needs (Gaithersburg, USA)", 1995年01月, 招待, 英語

受賞

  1. 2006年08月, 日本エアロゾル学会論文賞, 日本エアロゾル学会会長・奥山喜久夫, 新規変調プラズマによるSiH4/H2プラズマリアクター内のダスト微粒子の抑制
  2. 2001年07月, 日本エアロゾル学会論文賞, 日本エアロゾル学会会長・岩坂泰信, 半導体搬送ボックスのUV/光電子法によるクリーン化とMOSデバイス」評価
  3. 2000年08月, 日本エアロゾル学会特別賞(井伊谷賞), 日本エアロゾル学会会長・笠原三紀夫, 半導体表面清浄化技術における自然光の作用と表面制御ー光遮断によるSiウェハの自然酸化抑制ー
  4. 2000年04月, 日本空気清浄協会会長奨励賞, 日本空気清浄協会会長・吉澤晋, UV/光電子・光触媒クリーン化法のMOSキャパシタ電気特性への影響ー容器材質依存性ー

取得

  1. 特許権, 特許4215812, 2008年11月14日, 光集積回路装置
  2. 特許権, 特許4227667, 2008年12月05日, 光ニューラルネットワーク
  3. 特許権, 特許4315247, 2009年05月29日, 炭素を含む材料から成る突起を形成する方法、炭素を含む材料から成る突起を有する基板生産物、および電子放出素子
  4. 特許権, 特許4392051, 2009年10月16日, 発光素子およびその製造方法
  5. 特許権, 特許4392052, 2009年10月16日, 発光素子およびその製造方法
  6. 特許権, 特許4427589, 2009年12月18日, 光集積回路装置
  7. 特許権, 特許4445556, 2010年01月22日, 発光素子およびその製造方法
  8. 特許権, US:7720389, 2010年05月18日, 光集積回路装置
  9. 特許権, 特許4596451, 2010年10月01日, 突起構造の形成方法、突起構造、および電子放出素子
  10. 特許権, US:7847225, 2010年12月07日, 光ニューラルネットワーク
  11. 特許権, US:7907847, 2011年03月15日, 光集積回路装置
  12. 特許権, US:8044382, 2011年10月25日, 発光素子およびその製造方法
  13. 特許権, US:8330141, 2012年12月11日, 発光素子およびその製造方法
  14. 特許権, US:8368046, 2013年02月05日, 発光素子およびその製造方法
  15. 特許権, US:8470693, 2013年06月25日, 量子ドットの製造方法
  16. 特許権, 特許5480512, 2014年02月21日, 光検出器およびそれを備えた光集積回路装置
  17. 特許権, 台湾特許発明第153080号, 基板表面酸化防止の方法および装置(防止基板表面酸化之方法及装置)
  18. 特許権, 8980658, 2015年03月17日, 発光素子およびその製造方法

社会活動

委員会等委員歴

  1. 代議員, 2014年02月, 2016年01月, 公益社団法人応用物理学会
  2. 代議員, 2012年02月, 2014年01月, 公益社団法人応用物理学会
  3. 校内理事, 2012年08月, 2014年06月, (社)広島工業会