横山 新Shin Yokoyama

Last Updated :2017/10/02

所属・職名
ナノデバイス・バイオ融合科学研究所 ナノ集積科学研究部門 教授
ホームページ
メールアドレス
yokoyama-shinhiroshima-u.ac.jp

基本情報

主な職歴

  • 2008年05月01日, 広島大学, ナノデバイス・バイオ融合科学研究所, 教授
  • 1996年05月11日, 2008年04月30日, 広島大学, ナノデバイス・システム研究センター, 教授
  • 1994年05月01日, 1996年03月31日, 広島大学, 集積化システム研究センター, 教授
  • 1989年11月01日, 1994年04月30日, 広島大学, 集積化システム研究センター, 助教授
  • 1989年08月16日, 1989年10月31日, 筑波大学, 物質工学系, 助教授
  • 1985年10月01日, 1989年08月15日, 筑波大学, 物質工学系, 講師
  • 1981年04月01日, 1985年09月30日, 広島大学, 工学部, 助手

学歴

  • 広島大学, 工学研究科, 材料工学専攻, 日本, 1978年04月, 1981年03月
  • 広島大学, 工学研究科, 電気工学専攻, 日本, 1976年04月, 1978年03月
  • 広島大学, 工学部, 電子工学科, 日本, 1972年04月, 1976年03月

学位

  • 工学博士 (広島大学)
  • 工学修士 (広島大学)

教育担当

  • 先端物質科学研究科:半導体集積科学専攻, 先端物質科学研究科:半導体集積科学専攻

担当主専攻プログラム

  • 電子システムプログラム

研究分野

  • 工学 / 電気電子工学 / 電子デバイス・電子機器

研究キーワード

  • 半導体工学
  • LSI
  • 電子デバイス
  • 極微細デバイス
  • 光配線
  • バイオセンサー

所属学会

教育活動

授業担当

  1. 2017年, 教養教育, セメスター(前期), 科学技術と人間社会[1工二]
  2. 2017年, 学部専門, セメスター(後期), 半導体プロセス工学
  3. 2017年, 修士課程・博士課程前期, セメスター(前期), 先端物質科学特別講義
  4. 2017年, 修士課程・博士課程前期, セメスター(前期), エレクトロニクス概論
  5. 2017年, 修士課程・博士課程前期, 通年, 集積回路・プロセス演習
  6. 2017年, 修士課程・博士課程前期, セメスター(前期), LSI集積化工学
  7. 2017年, 修士課程・博士課程前期, セメスター(前期), 光電融合システム
  8. 2017年, 修士課程・博士課程前期, 年度, 半導体集積科学特別研究 I
  9. 2017年, 修士課程・博士課程前期, 通年, 半導体集積科学特別研究 I
  10. 2017年, 修士課程・博士課程前期, 年度, 半導体集積科学特別研究 I
  11. 2017年, 修士課程・博士課程前期, 年度, 半導体集積科学特別研究 I
  12. 2017年, 博士課程・博士課程後期, 年度, 半導体集積科学特別研究Ⅱ
  13. 2017年, 博士課程・博士課程後期, 年度, 半導体集積科学特別研究Ⅱ
  14. 2017年, 博士課程・博士課程後期, 通年, 半導体集積科学特別研究Ⅱ
  15. 2017年, 博士課程・博士課程後期, 年度, 半導体集積科学特別研究Ⅱ
  16. 2017年, 博士課程・博士課程後期, 年度, 半導体集積科学特別研究Ⅱ
  17. 2017年, 博士課程・博士課程後期, 年度, 半導体集積科学特別研究Ⅱ
  18. 2017年, 博士課程・博士課程後期, 集中, 半導体集積科学特別研究Ⅱ

研究活動

学術論文(★は代表的な論文)

  1. Detection of prostate specific antigen using silicon photonic crystal nanocavity resonator, IEEE SPIE Photonics West Proceedings Volume 10111: Quantum Sensing and Nano Electronics and Photonics XIV March 2017. doi:10.1117/12.2251604, Jan 28-Feb.2, 2017, San Francisco, 2017,3
  2. Characteristics of stacked multi-slot ring resonator sensors, Sensor Review, 37巻, 3号, pp.357-pp.363, 2017,7
  3. Temperature Dependence of Resonance Characteristics of Silicon Resonators and Thermal Stability Improvement by Differential Operation Method, Japanese Journal of Applied Physics, 56巻, 4号, pp.04CC06-1-pp.04CC06-5, 2017,4
  4. High-Sensitivity Double-Cavity Silicon Photonic-Crystal Resonator for Label-Free Biosensing, Japanese Journal of Applied Physics, 56巻, 4号, pp.04CM06-1-pp.04CM06-5, 2017, 4
  5. Influence of Surface Smoothing on Spin Seebeck Effect of Ce1Y2Fe5O12 Deposited by Metal Organic Decomposition, Japanese Journal of Applied Pgysics, 56巻, 4号, pp.04CN04-1-pp.04CN04-4, 2017,4
  6. Silicon Photonic Biosensors with MEMS Flow Control, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2017), pp.367-pp.368, 2017,9
  7. Label Free Detection of Prostate Specific Antigen Using Photonic Crystal Nanocavity Resonator, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2017), pp.287-pp.288, 2017,9
  8. Optical Waveguides with Memory Effect Using Photochromic Material for Neural Network, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2017), pp.97-pp.98, 2017,9
  9. Anomalous Nernst Effect of Ni-Al Alloys and Application to Spin Seebeck Devices, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2017), pp.991-pp.992, 2017,9
  10. Spin Seebeck Devices Using CexY3-xFe5O12 Deposited by Metal Organic Decomposition -Influence of Composition and Long Time Annealing Effect, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2017), pp.999-pp.1000, 2017,9
  11. MEMS Optical Switches Using Slot Ring Resonator for Low Voltage Operation, Japanese Journal of Applied Physics, 55巻, 4号, pp.04EC15-1-pp.04EC15-5, 2016, March, 29
  12. Magneto-Optical Switching Devices Based on Si Resonators, Japanese Journal of Applied Physics, 55巻, 4号, pp.04EN02-1-pp.04EN02-6, 2016, March, 22
  13. Blockade and Staircase Phenomena of Holes in Mesoscopic Scale lambda-Deoxyribonucleic Acid (DNA) / SiO2/ Si Structure, IEEE Electron Device Letters, 37巻, 2号, pp.224-pp.227, 2016, January, 6
  14. Detection of antibody-antigen reaction by silicon nitride slot-ring biosensors using protein G, OPTICS COMMUNICATIONS, 365巻, pp.16-pp.23, APR 15 2016
  15. Design and characterization of MEMS optical devices using slot-ring resonator for low-voltage operation, JAPANESE JOURNAL OF APPLIED PHYSICS, 55巻, 4号, 2016,4
  16. Silicon photonic crystal resonators for label free biosensor, JAPANESE JOURNAL OF APPLIED PHYSICS, 55巻, 4号, pp.04EM11-1-pp.04EM11-5, 2016,4
  17. Differential Si ring resonators for label-free biosensing, JAPANESE JOURNAL OF APPLIED PHYSICS, 55巻, 4号, pp.04EM04-1-pp.04EM04-7, 2016,4
  18. Influence of Surface Smoothing on Spin Seebeck Effect of Ce1Y2Fe5O12 Deposited by Metal Organic Decomposition, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2016), pp.933-pp.934, 2016,9
  19. Thermal Change in Resonance Wavelength of Si Resonator Sensors on Si on Insulator Substrate and Solution by Differential Operation, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2016), pp.487-pp.488, 2016,9
  20. High Sensitivity and High Quality-Factor Silicon Photonic Crystal Resonator with Double Nanocavities for Label Free Biosensing, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2016), pp.361-pp.362, 2016,9
  21. Mechanisms of temperature dependence of threshold voltage in high-k/metal gate transistors with different TiN thicknesses, INTERNATIONAL JOURNAL OF ELECTRONICS, 103巻, 4号, pp.629-pp.647, APR 2 2015
  22. Detection of antibody-antigen reaction by silicon nitride slot-ring biosensors using protein G, Optics Communications, 365巻, pp.16-pp.23, 2015, December, 10
  23. Mesoscopic Blockade and Staircase Phenomena of Holes in DNA/Si-MOSFET by Gate Voltage Modulation, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2015), pp.334-pp.335, 2015,9
  24. High Sensitive Biosensor using Si Photonic Crystal Cavity Resonators, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2015), pp.380-pp.381, 2015,9
  25. Biosensing by Differential Si Ring Resonators Robust to Process Variations, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2015), pp.840-pp.841, 2015,9
  26. MEMS Optical Switches Using Slot Ring Resonator for Low Voltage Operation, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2015), pp.598-pp.599, 2015,9
  27. Magneto-Optical Switching Devices Based on Si Photonic Resonators, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2015), pp.580-pp.581, 2015,9
  28. Proposal of MEMS Optical Device Using Slot-Ring Resonator with Low-Voltage Operation, 11th Int. Conf. on Group IV Photonics, pp.69-pp.70, 201408
  29. Differential Si Ring-Resonator Biosensors Robust to Process Variations, 11th Int. Conf. on Group IV Photonics, pp.213-pp.214, 201408
  30. Study of charge retention mechanism for DNA memory FET, IEICE ELECTRONICS EXPRESS, 11巻, 5号, 2014
  31. Improvement of Hump Phenomenon of Thin-Film Transistor by SiNX Film, IEICE TRANSACTIONS ON ELECTRONICS, E97C巻, 11号, pp.1112-pp.1116, 2014,11
  32. Multi-Slot Stack-Type Ring Resonator for High Sensitivity Biosensor and Low Voltage Optical Modulator, 10th Int. Conf. on Group IV Photonics, pp.9-pp.10, 201308
  33. Fabrication and Evaluation of Differential Si Ring Optical Resonator for Biosensors, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2013), pp.826-pp.827, 2013,9
  34. Mach-Zehnder Interferometer Optical Modulator with Cascade P/N Junctions, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2013), pp.1004-pp.1005, 2013,9
  35. Optical Modulation Based on Surface Plasmon Resonance Using Metal-Insulator-Semiconductor Structure, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2013), pp.1008-pp.1009, 2013,9
  36. Silicon Ring Optical Modulator with p/n Junctions Arranged along Waveguide for Low-Voltage Operation, JAPANESE JOURNAL OF APPLIED PHYSICS, 51巻, 4号, 2012,4
  37. Electrical Property of DNA Field-Effect Transistor: Charge Retention Property, JAPANESE JOURNAL OF APPLIED PHYSICS, 51巻, 4号, 2012,4
  38. Gating electrical transport through DNA molecules that bridge between silicon nanogaps, NANOSCALE, 4巻, 6号, pp.1975-pp.1977, 2012
  39. High Sensitive Biosensores with Slot and Stack-Type Structure using Silicon Nitride Waveguides, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2012), pp.362-pp.363, 2012,9
  40. Differential Si Ring Optical Resonator Biosensors, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2012), pp.1097-pp.1098, 2012,9
  41. Strain imaging of a Cu2S switching device, CURRENT APPLIED PHYSICS, 11巻, 6号, pp.1364-pp.1367, 2011,11
  42. Sensitivity Improvement of Biosensors Using Si Ring Optical Resonators, JAPANESE JOURNAL OF APPLIED PHYSICS, 50巻, 4号, 2011,4
  43. Detection of Antigen-Antibody Reaction Using Si Ring Optical Resonators Functionalized with an Immobilized Antibody-Binding Protein, JAPANESE JOURNAL OF APPLIED PHYSICS, 50巻, 4号, 2011,4
  44. A Study of Mach-Zehnder Interferometer Type Optical Modulator Applicable to an Accelerometer, JAPANESE JOURNAL OF APPLIED PHYSICS, 50巻, 4号, 2011,4
  45. Design and Simulation of Silicon Ring Optical Modulator with p/n Junctions along Circumference, JAPANESE JOURNAL OF APPLIED PHYSICS, 50巻, 4号, 2011,4
  46. Electrical Property of DNA FET -Charge Retention Property-, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2011), pp.134-pp.135, 2011,9
  47. Acceleration Sensor Based on CMOS Inverter Having Force Balanced Movable Gate Electrode, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2011), pp.420-pp.421, 2011,9
  48. Band-to-Band Tunneling Transistor for Application to Bio Sensor, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2011), pp.410-pp.411, 2011,9
  49. Low-operation Voltage and High-speed Silicon Ring Optical Modulator with p/n Junctions along Waveguide, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2011), pp.817-pp.818, 2011,9
  50. Reduction of Hydrogen Annealing Temperature for Shape Transformation of Si Surface by Very Short Water Rinse, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2011), pp.260-pp.261, 2011,9
  51. Selective Detection of Antigen-Antibody Reaction Using Si Ring Optical Resonators, JAPANESE JOURNAL OF APPLIED PHYSICS, 49巻, 4号, 2010
  52. Reduction in Operation Voltage of Silicon Ring Optical Modulator Using High-k (Ba,Sr)TiO3 Cladding Layer, JAPANESE JOURNAL OF APPLIED PHYSICS, 49巻, 4号, 2010
  53. Electrical Characterisation of Tunneling-Dielectric TFT at Low Temperatures, Abst. 9th Int. Workshop on Low Temperature Electronics (WOLTE-9) (Sao Pauro, June, 2010), pp.67-pp.74, 2010,6
  54. Electrical Characteristic in the Low and High Temperatures for Tunneling-Dielectric TFT, Abst. 2010 Int. Meeting for Future of Electron Devices, Kansai, (IMFEDK2010) (Osaka, May, 2010), pp.78-pp.79, 2010,5
  55. Development of Accelerometer Using Mach-Zehnder Interferometer Type Optical Waveguide,, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2010) (2010), pp.1080-pp.1081, 2010,9
  56. Detection of Antigen-Antibody Reaction Using Si Ring Optical Resonators Functionalized with an Immobilized Antibody-Binding Protein, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2010), pp.537-pp.538, 2010,9
  57. Sensitivity Improvement of Biosensors using Si Ring Optical Resonators, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2010), pp.171-pp.172, 2010,9
  58. Design and Simulation of Silicon Ring Optical Modulator with p/n Junctions along Circumference, Extend. Abst. Int. Conf. on Solid State Devices and Materials (SSDM2010), pp.1076-pp.1077, 2010,9
  59. Si Ring Optical Modulator with Multi-Cascade p/n Junctions, 7th International Conference on Group IV Photonics (Beijing, China, Sept. 1-3, 2010), pp.P2.1, 2010,9
  60. Electrical Characteristic in the Low and High Temperatures for Tunneling-Dielectric TFT, Proc. 6th Int. Thin-Film Transistor Conf. (ITC'10) (Himeji, Jan. 2010), pp.265-pp.268, 2010,1
  61. Fabrication of Si Nanowire Field-Effect Transistor for Highly Sensitive, Label-Free Biosensing, JAPANESE JOURNAL OF APPLIED PHYSICS, 48巻, 6号, 2009,6
  62. Optical modulator using metal-oxide-semiconductor type Si ring resonator, OPTICAL REVIEW, 16巻, 3号, pp.247-pp.251, 2009,5
  63. Si Ring Optical Resonators for Integrated On-Chip Biosensing, JAPANESE JOURNAL OF APPLIED PHYSICS, 48巻, 4号, 2009,4
  64. Characterization of Ge Photodiodes Fabricated on Vicinal Si Substrate, JAPANESE JOURNAL OF APPLIED PHYSICS, 48巻, 4号, APR 2009
  65. Magneto-optic effect in amorphous Bi3Fe5O12 waveguides sputtered at room temperature, JAPANESE JOURNAL OF APPLIED PHYSICS, 47巻, 4号, pp.2915-pp.2920, APR 2008
  66. Photoelastic effect in silicon ring resonators, JAPANESE JOURNAL OF APPLIED PHYSICS, 47巻, 4号, pp.2910-pp.2914, APR 2008
  67. Imprint property of optical Mach-Zehnder interferometers using (Ba,Sr)TiO3 sputter-deposited at 450 degrees C, JAPANESE JOURNAL OF APPLIED PHYSICS, 47巻, 4号, pp.2897-pp.2901, APR 2008
  68. Fabrication of tunneling dielectric thin-film transistor with very thin SiNx films onto source and drain, IEICE ELECTRONICS EXPRESS, 4巻, 14号, pp.442-pp.447, 2007,7,25
  69. Transient response in monolithic Mach-Zehnder optical modulator using (Ba,Sr)TiO3 film sputtered at low temperature on silicon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46巻, 4B号, pp.2462-pp.2466, APR 2007
  70. Compact multimode optical ring resonators for interconnection on silicon chips, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46巻, 4B号, pp.2364-pp.2368, APR 2007
  71. Effect of H2 addition during Cu thin-film sputtering, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45巻, 12号, pp.9058-pp.9062, 2006,12
  72. Optical properties of amorphous Ba0.7Sr0.3TiO3 thin films obtained by metal organic decomposition technique, THIN SOLID FILMS, 515巻, 4号, pp.2326-pp.2331, 2006,12,5
  73. Fabrication of spin-coated optical waveguides for optically interconnected LSI and influence of fabrication process on underlying metal-oxide-semiconductor capacitors, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45巻, 4B号, pp.3498-pp.3503, APR 2006
  74. Design and simulation of ring resonator optical switches using electro-optic materials, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45巻, 4B号, pp.3493-pp.3497, APR 2006
  75. Structural and optical properties of electro-optic material: Sputtered (Ba,Sr)TiO3, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45巻, 4B号, pp.3488-pp.3492, APR 2006
  76. Groove-buried optical waveguides based on metal organic solution-derived amorphous Ba0.7Sr0.3TiO3 thin films, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45巻, 4B号, pp.3482-pp.3487, APR 2006
  77. Monolithically integrated optical modulator based on polycrystalline Ba0.7Sr0.3TiO3 thin films, APPLIED PHYSICS LETTERS, 88巻, 16号, APR 17 2006
  78. Fabrication of high-density diamond nanotips by electron beam lithography, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45巻, 3A号, pp.1771-pp.1774, 2006,3
  79. Plasma-based ion implantation sterilization technique and ion energy estimation, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 23巻, 4号, pp.1018-pp.1021, 2005,7-8
  80. Mechanism of anomalous behavior of metal-oxide-semiconductor capacitors contaminated with organic molecules, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44巻, 3号, pp.1208-pp.1212, 2005,3
  81. Evaluation of front-opening unified pod with attached UV/photocatalyst cleaning unit, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44巻, 2号, pp.1130-pp.1131, 2005,2
  82. 新規変調プラズマによるSiH4/H2プラズマCVDリアクター内のダスト微粒子の抑制, エアロゾル研究, 20巻, 3号, pp.231-pp.237, 20050901
  83. Carrier mobility in metal-oxide-semiconductor field effect transistor with atomic-layer-deposited Si-nitride gate dielectrics, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 44巻, 28-32号, pp.L903-pp.L905, 2005
  84. Contact-hole etching with NH3-added C5F8 pulse-modulated plasma, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44巻, 9A号, pp.6476-pp.6480, 2005,9
  85. Structure and optical band-gap energies of Ba0.5Sr0.5TiO3 thin films fabricated by RF magnetron plasma sputtering, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44巻, 12号, pp.8507-pp.8511, 2005,12
  86. SiO2 hole etching using perfluorocarbon alternative gas with small global greenhouse effect, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43巻, 6A号, pp.3586-pp.3589, 2004,6
  87. Growth and electrical properties of atomic-layer deposited ZrO2/Si-nitride stack gate dielectrics, JOURNAL OF APPLIED PHYSICS, 95巻, 2号, pp.536-pp.542, 2004,1,15
  88. Particle formation and trapping behavior in a TEOS/O-2 plasma and their effects on contamination of a Si wafer, AEROSOL SCIENCE AND TECHNOLOGY, 38巻, 2号, pp.120-pp.127, 2004,2
  89. Investigation of surface contamination on silicon oxide after hydrofluoric acid etching by noncontact capacitance method, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42巻, 12号, pp.7601-pp.7602, 2003,12
  90. Organic contamination dependence of process-induced interface trap generation in ultrathin oxide metal oxide semiconductor transistors, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42巻, 12A号, pp.L1429-pp.L1432, 2003,12,1
  91. Compact branched optical waveguides using high-index-contrast stacked structure, OPTICAL REVIEW, 10巻, 5号, pp.357-pp.360, 2003, 9-10
  92. Evaluation of surface contamination by noncontact capacitance method under UV irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42巻, 9A号, pp.5837-pp.5843, 2003,9
  93. Comparative studies of perfluorocarbon alternative gas plasmas for contact hole etch, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42巻, 9A号, pp.5759-pp.5764, 2003,9
  94. High quality atomic-layer-deposited ultrathin Si-nitride gate dielectrics with low density of interface and bulk traps, APPLIED PHYSICS LETTERS, 83巻, 2号, pp.335-pp.337, 2003,7,14
  95. Phosphorus-assisted low-energy arsenic implantation technology for N-channel metal-oxide-semiconductor field-effect transistor source/drain formation process, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42巻, 5A号, pp.2654-pp.2659, 2003,5
  96. Carrier mobility in p-MOSFET with atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics, IEEE ELECTRON DEVICE LETTERS, 24巻, 7号, pp.472-pp.474, 2003,7
  97. Excellent Contact-Hole Etching with NH3 Added C5F8 Pulse-Modulated Plasma, Extend. Abst. of the Int. Conf. on Solid State Devices and Materials, pp.454-pp.455, 20030901
  98. Organic Contamination Dependence of Process Induced Interface Trap Generation in Ultrathin Oxide Metal Oxide Semiconductor Transistors, Jpn. J. Appl. Phys., 42巻, 12A号, pp.L1429-L1432, 20031201
  99. Atomic-layer-deposited silicon-nitride/SiO2 stack - a highly potential gate dielectrics for advanced CMOS technology, MICROELECTRONICS RELIABILITY, 42巻, 12号, pp.1823-pp.1835, 2002,12
  100. Atomic-layer deposition of ZrO2 with a Si nitride barrier layer, APPLIED PHYSICS LETTERS, 81巻, 15号, pp.2824-pp.2826, 2002,10,7
  101. High-quality NH3-annealed atomic layer deposited Si-nitride/SiO2 stack gate dielectrics for sub-100 nm technology generations, SOLID-STATE ELECTRONICS, 46巻, 10号, pp.1659-pp.1664, 2002,10
  102. Influence of organic contaminant on trap generation in thin SiO2 of metal-oxide-semiconductor capacitors, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 41巻, 7A号, pp.4750-pp.4753, 2002,7
  103. Low-temperature formation of highly reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal-oxide-semiconductor technology, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 20巻, 4号, pp.1406-pp.1409, 2002,7-8
  104. Conduction mechanism of Si single-electron transistor having a one-dimensional regular array of multiple tunnel junctions, APPLIED PHYSICS LETTERS, 81巻, 4号, pp.733-pp.735, 2002,7,22
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  108. Low thermal-budget ultrathin NH3-annealed atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics with excellent reliability, IEEE ELECTRON DEVICE LETTERS, 23巻, 4号, pp.179-pp.181, APR 2002
  109. NH3-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability, APPLIED PHYSICS LETTERS, 80巻, 7号, pp.1252-pp.1254, 2002,2,18
  110. An Effective Method for Obtaining Interface Trap Distribution in MOS capacitors with Tunneling Gate Oxides, Proceedings 2002 IEEE Int. Conf. on Semiconductor Electronics (ICSE 2002), pp.402-pp.406, 20021201
  111. A comparative study of bulk and interface trap generation in ultrathin SiO2 and atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics, Forth Int. Symposium on Control of Semiconductor Interface (ISCSI-IV), pp.A6-3-A6-3, 20021001
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  113. Time-dependent breakdown of ultrathin SiO2 gate dielectrics under static and dynamic stress, Abst. 2nd ECS Int. Semiconductor Technology Conf., pp.Abstract No.71, 20020901
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  120. Effect of light irradiation on native oxidation of silicon surface, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40巻, 4A号, pp.2223-pp.2224, APR 2001
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  124. Low-temperature selective deposition of silicon on silicon nitride by time-modulated disilane flow and formation of silicon narrow wires, APPLIED PHYSICS LETTERS, 79巻, 4号, pp.494-pp.496, 2001,7,23
  125. Low-temperature formation of silicon nitride gate dielectrics by atomic-layer deposition, APPLIED PHYSICS LETTERS, 79巻, 5号, pp.665-pp.667, 2001,7,30
  126. Ultrathin NH3 annealed atomic layer deposited Si-nitride/SiO2 stack gate dielectrics with high reliability, 2001 International Semiconductor Device Research Symposium, pp.26-pp.29, 20011201
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  129. Stacked Optical Branched Waveguides for Optical Interconnection on Si Chip, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.596-pp.597, 20010401
  130. Influence of Organic Contaminantion on Reliability and Trap Generation in MOS Devices, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.176-pp.177, 20010401
  131. Conduction Mechanism in Extremely Thin Poly-Si Wires ---Width Dependence of Coulomb Blockade Effect---, 1994 International Conf. on Solid State Devices and Materials, pp.438-pp.439, 20010401
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  133. Low-temperature selective deposition of silicon by time-modulation exposure of disilane and formation of silicon nanowires, Extend. Abst.2001 Int. Conf. on Solid State Devices and Materials, pp.202-pp.203, 20000401
  134. Fabrication of novel double-barrier MOS transistors with poly-Si dots, Abst. of Intern. Symp. on Formation, Physics and Device Application of Quantum Dot Structures, pp.10-10, 20000401
  135. Atomic-layer-deposited silicon nitride/SiO2 stacked gate dielectrics for highly reliable p-MOSFETs, Applied Physics Letters, 77巻, 18号, pp.2855-pp.2857, 20000101
  136. Comparative Studies of PFC alternative Gas Plasmas for Contact Hole Etch, Proc. of 22th Symp. on Dry Process (2000), pp.199-pp.204, 20001001
  137. Influence of Organic Contaminant on Breakdown Characteristics of MOS Capacitors with Thin SiO2, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.552-pp.553, 20000401
  138. Optimum Atomic Spacing for AlAs Etching in GaAs Epitaxial Lift-Off Technology, Jpn. J. Appl. Phys., 39巻, 5B号, pp.L457-L459, 20000401
  139. Calculation of electrical properties of novel double-barrier metal oxide semiconductor transistors, Jpn. J. Appl. Phys., 38巻, part1,1B号, pp.399-pp.402, 19990101
  140. Characterization of silicon/oxide/nitride layers by X-ray photoelectron spectroscopy, Applied Physics Letters, 75巻, 11号, pp.1535-pp.1537, 19990901
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  142. Evaluation of 300 mm Wafer Boxes with UV/Photoelectron Cleaning Capability, Proc. Int. Symp. on Semicon. Manuf., pp.169-pp.172, 19990401
  143. Atomic-Layer Deposition of Silicon Nitride, J. Korean Physical Soc., 35巻, pp.S71-S75, 19990401
  144. Quantitative evaluation of dopant loss in 5-10 keV As ion implantation for low-resistive, ultrashallow source/drain formation, Jpn. J. Appl. Phys., 38巻, 4B号, pp.2324-pp.2328, 19990401
  145. High-Speed GaAs Epitaxial Lift-Off and Bonding with High Alignment Accuracy Using Sapphire Plate, J. Electrochem. Soc., 146巻, 2号, pp.pp.710-712, 19990401
  146. Calculation of electrical properties of novel double-barrier MOS transistors, Abst. of Intern. Symp. on Formation, Physics and Device Application of Quantum Dot Structures, pp.10-pp.10, 1998,4,1
  147. Threshold voltage fluctuation induced by direct tunnel leakage current through 1.2-2.8nm thick gate oxides for scaled MOSFETs, Tech. Digest IEDM, pp.919-pp.922, 19981201
  148. Reduction of Gaseous Contamination by UV/Photoelectron Method, IEEE Trans. Semicond. Manuf., 11巻, 1号, pp.9-pp.12, 19980401
  149. 光触媒を用いたUV/光電子法による密閉空間の超清浄化, エアロゾル研究, 13巻, 2号, pp.110-pp.118, 19980601
  150. An Experimental Pattern Recognition System Using Bidirectional Optical Bus Lines, Jpn. J. Appl. Phys., 37巻, 3B号, pp.1116-pp.1121, 19980401
  151. Effect of UV/Photoelectron and Photocatalyst Cleaning on the Reliability of Thin Gate Oxides, Proc. of the 44th Meeting of the Institute of Environm. Sci. and Tech., pp.210-pp.214, 19980401
  152. Self-Limiting Atomic-Layer Selective Deposition of Silicon Nitride by Temperature-Controlled Method, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.22-pp.23, 19980401
  153. Design and Fabrication of Optically-Interconnected Kohonen Net for High-Speed Pattern Recognition, Proc. Int. Symp. on Future of Intellectual Integrated Electronics, pp.453-pp.457, 19980401
  154. Atomic-Layer Selective Deposition of Silicon Nitride on Hydrogen-Terminated Si Surfaces, Applied Surface Science, 130-132巻, pp.352-pp.356, 19980401
  155. Dopant loss origins of low energy implanted arsenic and antimony for ultra shallow junction formation, Mat. Res. Soc. Symp. Proc., 532巻, pp.23-pp.28, 1998,4,1
  156. Quantitative Evaluation of Dopant Loss in Low Energy As Implantation for Low-Resistive, Ultra Shallow Source/Drain Formation, 1994 International Conf. on Solid State Devices and Materials, pp.18-pp.19, 19980801
  157. Evaluation of Stress Induced Deffects due to Recessed LOCOS Process, Abst. of IUMRS Int. Conf. on Electronic Materials 1998 (IUMRS-ICEM-98), pp.79, 19980801
  158. New Ar-plasma cleaning process for reduction of Al/TiSi2 contact resistance, Jpn. J. Appl. Phys., 37巻, 11号, pp.5902-pp.5905, 19981101
  159. Threshold voltage fluctuation induced by direct tunnel leakage current through 1.2-2.8 nm thick gate oxides for scaled MOSFETs, Int. Electron Devices Meeting 1998. Technical Digest, pp.919-pp.922, 19981201
  160. A study of electrical characteristics improvements in sub-0.1 mu m gate length MOSFETs by low temperature operation, IEICE Trans. Electron., E81-C巻, 12号, pp.1913-pp.1917, 19981201
  161. Atomic-Layer Deposition of Silicon Nitride, Abst. of IUMRS Int. Conf. on Electronic Materials, pp.78-78, 1998,4,1
  162. Influence of Wafer Material on Defect Generation During Deep Submicron LOCOS Process, 1994 International Conf. on Solid State Devices and Materials, pp.579-pp.582, 19970801
  163. Atomic Layer Controlled Deposition of Silicon Nitride and In Situ Growth Observation by Infrared Reflection Absorption Spectroscopy, Applied Surface Science, 112巻, pp.75-pp.81, 19970401
  164. High-Speed GaAs Epitaxial Lift-Off and Bonding with High Alignment Accuracy using Sapphire Plate, Abst. 191st Electrochem. Soc. Meeting, pp.2469-2469, 19970401
  165. Reliability Evaluation of Ultrathin Gate Oxides Grown on Si Wafers Stored in Clean Stocker with a UV/Photoelectron Source, Proc. Int. Symp. on Semicon. Manuf., pp.F-5-F-8, 19970401
  166. Atomic-Layer Selective Deposition of Silicon Nitride on Hydrogen-Terminated Si Surfaces, Abst. 4th Int. Symp. on Atomically Controlled Surf. and Interfaces, pp.314-pp.315, 19970401
  167. Experimental Pattern Recognition System using Bidirectional Optical Bus Lines, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.388-pp.389, 19970401
  168. Heteroepitaxial Layer Overgrowth of GaP on Structured Silicon Surfaces, Abst. 191st Electrochem. Soc. Meeting, pp.499-499, 19970401
  169. Photo-electronic Crossbar Switching Network for Multiprocessor Systems, Appl. of Photonic Tech. 2, Plenum Press, pp.505-pp.510, 19970401
  170. High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits, Jpn. J. Appl. Phys., 36巻, 3号, pp.pp.1554-1557, 19970401
  171. Experimental Pattern Recognition System using Bi-directional Optical Bus Lines, Extended Abstracts of the 1998 Int. Conf. Solid State Devices and Materials(SSDM’98), 19970901
  172. UV/光電子を用いた減圧下での微粒子除去, 空気清浄, 34巻, 1号, pp.11-pp.16, 19960501
  173. High-Efficiency Micromirrors and Branched Optical Waveguides on Silicon Chip, Jpn. J. Appl. Phys., 35巻, 2B号, pp.941-pp.945, 19960401
  174. Control of Fine Particulate and Gaseous Contaminants by UV/Photoelectron Method, IEICE Trans. Electron., E79-C巻, 3号, pp.306-pp.311, 19960401
  175. High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.643-pp.645, 19960401
  176. Reduction of Gaseous Contamination by UV/Photoelectron Method, Proc. Int. Symp. on Semicon. Manuf., pp.192-pp.195, 19960401
  177. Real-Time Study on Heteroepitaxial GaAs and GaP Growth Processes on Structured Si(100) Substrates, Abst. 1996 Fall meeting of Mat. Rec. Soc., pp.M8.2-M8.2, 19960401
  178. ★, Atomic Layer Controlled Deposition of Silicon Nitride with Self-limiting Mechanism, Applied Physics Letters, 68巻, 23号, pp.3257-pp.3259, 19960401
  179. Optically Interconnected Kohonen Net for Pattern Recognition, Jpn. J. Appl. Phys., 35巻, 2B号, pp.pp.1405-1409, 19960401
  180. Optical Interconnection on Silicon LSI Chips, Proc. Photonics West, 2400巻, pp.89-pp.93, 19950401
  181. Test Chip Fabrication of 3D Optically Coupled Common Memory for Parallel Processing System, Proc. Photonics West, 2400巻, pp.8-pp.15, 19950401
  182. GaAs/Si Optoelectronic Design and Development at Hiroshima Universit, Proc. Intern. Workshop of Semicon. Character.(Gaithersburg, USA), pp.599-pp.604, 1995,4,1
  183. Fabrication and Evaluation of Three-Dimensional Optically-Coupled Common Memory, Jpn. J. Appl. Phys., 34巻, 2B号, pp.1246-pp.1248, 19950401
  184. Single-Chip Integration of Light-Emitting Diode, Waveguide and Micromirrors, Jpn. J. Appl. Phys., 34巻, 2B号, pp.1282-pp.1285, 19950401
  185. High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.830-pp.832, 19950401
  186. Optically Interconnected Kohonen Net for Pattern Recognition, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.1075-pp.1076, 19950401
  187. Valence Band Alignment of Ultra-Thin SiO2/Si Interfaces as Determined by High Resolution X-Ray Photoelectron Spectroscopy, Mat. Res. Soc. Symp. Proc., 386巻, pp.249-pp.254, 1995,4,1
  188. Valence Band Alignment at Ultra-Thin SiO2/Si(100) Interfaces Determined by High-Resolution X-Ray Photoelectron Spectroscopy, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.28-pp.30, 19950401
  189. Control of Fine Particulate and Gaseous Contaminants by UV/Photoelectron Method, Proc. Int. Symp. on Semicon. Manuf., pp.60-pp.63, 19950401
  190. Optical Waveguides on Si Chip, J. Vac. Sci. Technol. A, 13巻, 3号, pp.629-pp.635, 19950401
  191. Determination of Valence Band Alignment at Ultra-Thin SiO2/Si Interfaces by H, Jpn. J. Appl. Phys., 34巻, 6A号, pp.L653-L656, 19950401
  192. Fine Particulate Contaminant Control by the UV/Photoelectron Method under a Low Pressure Condition, Review of Scientific Instruments, 66巻, 11号, pp.5348-pp.5351, 19950401
  193. High-Efficiecy Micromirrors and Branched Optical Waveguides on Si Chips, Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials(SSDM'95), pp.830-pp.831, 1995,9,1
  194. Optically Interconnected Kohonen Net for Pattern Recognition, 1994 International Conf. on Solid State Devices and Materials, pp.1075, 19950901
  195. Micron-Size Optical Waveguide for Optoelectronic Integrated Circuits, Jpn. J. Appl. Phys., 33巻, 1B号, pp.822-pp.826, 19940401
  196. New RAM-Bus Memory System with Interchip Optical Interconnection, Jpn. J. Appl. Phys., 33巻, 1B号, pp.848-pp.851, 19940401
  197. Fundamental Characteristics of Optically Coupled Three-Dimensional Common Memory, Optoelectronics Devices and Technologies, 9巻, 1号, pp.119-pp.130, 19940401
  198. He Ion Beam Induced Arsenic Atom Displacement Studied by Medium-Energy Ion Spectroscopy, Mat. Res. Soc. Symp. Proc., 316巻, pp.123-pp.128, 1994,4,1
  199. The Performance Study of Ion Implanter Based Medium Energy Ion Spectroscopy with Solid State Detector, Mat. Res. Soc. Symp. Proc., 324巻, pp.409-pp.414, 1994,4,1
  200. Single Chip Integration of LED, Waveguide and Micromirrors, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.90-pp.92, 19940401
  201. Fabrication and Evaluation of Three-Dimensional Optically-Coupled Common Memory, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.965-pp.966, 19940401
  202. Evaluation of Plasma-Induced Damage by Medium Energy Ion Scattering, Jpn. J. Appl. Phys., 33巻, 4B号, pp.2179-pp.2183, 19940401
  203. Implanted Antimony Precipitation in Silicon Studied by Medium-Energy Ion Scattering, Jpn. J. Appl. Phys., 33巻, 12B号, pp.L1799-L1802, 19940401
  204. Single Chip Integration of LED, Waveguide and Micormirrors, 1994 Intern. Conf. on Solid State Devices and Materials (Yokohama, Aug. 23-26, 1994), pp.90-pp.92, 1994,8,1
  205. Fabrication and Evaluation of Three-Dimensional Optically-Coupled Common Memory, 1994 International Conf. on Solid State Devices and Materials, pp.965-pp.966, 19940801
  206. Helium Ion Beam Induced Arsenic Atom Displacement Studied by Medium-Energy Ion Spectroscopy, Mat. Res. Soc. Symp. Proc., 316巻, pp.123, 19940401
  207. Influence of Sputtering Geometry on Crystallinity of Al(110) Thin Films on Offset (100)Si, Jpn. J. Appl. Phys., 32巻, 2B号, pp.L283-L286, 19930401
  208. Medium Energy Ion Spectroscopy of Very Thin As Implanted Layer in Si, Digest of Papers of 6th Intern. MicroProcess Conf., pp.194-pp.195, 19930401
  209. Effect of Hydrogen and Bias on Single-Crystal Al Growth on Vicinal Si by DC Magnetron Sputtering, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.546-pp.548, 19930401
  210. Medium Energy Ion Spectroscopy of Ultra-Thin As+ Implanted Layers: The Effect of Reversible Site Change of As Atoms, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.582-pp.584, 19930401
  211. Micron-Size Optical Waveguide for Optoelectronic Integrated Circuits, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.1047-pp.1049, 19930401
  212. New RAM-Bus Memory System with Interchip Optical Interconnection, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.673-pp.675, 19930401
  213. Evaluation of Plasma-Induced Damage by Medium Energy Ion Scattering, Porc. of 15th Symp. on Dry Process, pp.73-pp.78, 19930401
  214. Medium-Energy Ion Spectroscopy Using Ion Implanter, Jpn. J. Appl. Phys., 32巻, 7A号, pp.L962-L965, 19930401
  215. 3 V Operation of 70 nm Gate Length MOSFET with New Double Punchthrough Stopper Structure, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.490-pp.492, 19920401
  216. Hot Carrier Degradation in 73 nm Gate Length MOSFET’s with New Double Punchthrough Stopper Structure, Tech. Digest Int. Electron Devices Meeting, pp.1019-pp.1022, 19920401
  217. 光インターコネクションを有する3次元メモリLSI, 電子情報通信学会論文誌D・I, J75-C-1巻, 5号, pp.257-pp.268, 19920501
  218. Parallel Data Inspection Operation in Three-Dimensional Content Addressable Memory with Optical Interconnection, 1992 Intern. Conf. on Solid State Devices and Materials (Tsukuba, Aug. 26-28, 1992), pp.592-pp.594, 1992,8,1
  219. Atomic Layer Growth of Bi-Sr-Ca-Cu-O by Molecular Beam Epitaxy Using Ozone under UV Irradiation, Jpn. J. Appl. Phys., 30巻, 1B号, pp.L106-L109, 19910401
  220. Design of Optically Coupled Three Dimensional Content Addressable Memory, Jpn. J. Appl. Phys., 30巻, 3A号, pp.L338-L341, 19910401
  221. Single Crystal Growth of Al(110) on Si(100) by Ultra-High-Vacuum Sputtering System, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.757-pp.758, 19910401
  222. Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Superconducting Films by Molecular Beam Epitaxy, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.435-pp.437, 19910401
  223. Coupled Monte Carlo-Energy Relaxation Analysis of Hot-Carrier Light Emission in MOSFET’s, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.459-pp.461, 19910401
  224. A Novel Fabrication Technology for Optically Interconnected Three Dimensional LSI by Wafer Aligning and Bonding Technique, Int. Semicon. Device Research Symposium, pp.327-pp.330, 19910401
  225. Single-Crystal Growth of Al(110) on Vicinal Si(100) in Ultra-High-Vacuum Sputtering System, Jpn. J. Appl. Phys., 30巻, 12B号, pp.3685-pp.3690, 19910401
  226. Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Superconducting Films by Molecular Beam Epitaxy, Jpn. J. Appl. Phys., 30巻, 12B号, pp.3900-pp.3903, 19910401
  227. Coupled Monte Carlo-Energy Relaxation Analysis of Hot-Carrier Light Emission in Metal Oxide Semiconductor Field Effect Transistors, Jpn. J. Appl. Phys., 30巻, 12B号, pp.3666-pp.3670, 19910401
  228. Chemical Bonding Features of Fluorine and Boron in BF2+-Ion-Implanted Si, Extend. Abst. of Conf. on Solid State Devices and Materials, pp.421-pp.424, 19900401
  229. Design of Optically Coupled Three Dimensional Content Addressable Memory, Extend. Abst. of Conf. on Solid State Devices and Materials, pp.765-pp.768, 19900401
  230. Atomic Layer Growth of Bi-Sr-Ca-Cu-O by Molecular Beam Epitaxy Using Ozone under UV Irradiation, Extend. Abst. of Conf. on Solid State Devices and Materials, pp.929-pp.932, 19900401
  231. Two-Dimensional Device Simulation for Poly-Silicon Thin Film Transistor, 1994 International Conf. on Solid State Devices and Materials, pp.1003-pp.1006, 19900401
  232. Two-Dimensional Device Simulation for Avalanche Induced Short Channel Effect in Poly-Si TFT, Tech. Digest Int. Electron Devices Meeting, pp.859-pp.862, 19900401
  233. Chemical Bonding Features of Fluorine and Boron in BF2+-Ion-Implanted Si)., Jpn. J. Appl. Phys., 29巻, 12号, pp.L2349-L2352, 19900401
  234. Two-Dimensional Device Simulation for Poly-Silicon Thin Film Transistor, Jpn. J. Appl. Phys., 29巻, 12号, pp.L2388-L2391, 19900401
  235. Chemical Bonding Features of Fluorine in BF2+ implanted Si, the 3rd Symp. on Ion Sources and Ion-Assisted Technology: Special Seminar (Tokyo, June 4-6, 1990), pp.187-pp.194, 1990,6,1
  236. ★, Low-Temperature Selective Growth of GaAs by Alternately Supplying Molecular Beam Epitaxy, J. Cryst. Growth, 95巻, 1-4号, pp.32-pp.34, 19890401
  237. Lateral Control of Impurity-Induced Disordering of AlAs/GaAs Superlattice, Nuclear Instr. and Methods in Phys. Research, B39巻, 1-4号, pp.441-pp.444, 19890401
  238. Antiphase Defect Reduction Mechanism in MBE Grown GaAs on Si, Mat. Res. Soc. Symp. Proc.=, 116巻, pp.261-pp.263, 19890401
  239. Anisotropic Lateral Growth of GaAs in Molecular Beam Epitaxy, Proc. 16th Int. Symp. on GaAs and Related Compounds, pp.147-pp.152, 19890401
  240. Solid-Phase Epitaxy of Molecular Beam Deposited Amorphous GaAs on Si, Appl. Phys. Lett, 54巻, 25号, pp.2562-pp.2564, 19890401
  241. Low Temperature Growth of GaAs on Si by Migration Enhanced Molecular Beam Epitaxy, Extend. Abst. of Conf. on Solid State Devices and Materials, pp.147-pp.150, 19870401
  242. Solid-Phase Crystal Growth of Molecular-Beam-Deposited Amorphous GaAs, J. Appl. Phys., 62巻, 5号, pp.1808-pp.1814, 19870401
  243. Preparation of Y-Ba-Cu-O Thin Films by RF-Magnetron Sputtering, Jpn. J. Appl. Phys., 26巻, 9号, pp.L1484-L1486, 19870401
  244. レーザ誘起エッチング及びCVD, レーザー研究, 13巻, 2号, pp.148-pp.155, 19850201
  245. A New Method of Measuring Internal Stress in Thin Films Deposited on Silicon by Raman Spectroscopy, Jpn. J. Appl. Phys., 24巻, 1号, pp.866-pp.867, 19850401
  246. Laser-Assisted Chemical Vapor Deposition of Stoichiometric Boron Nitrid, Extend. Abst. of Conf. on Solid State Devices and Materials, pp.169-pp.172, 19850401
  247. Anisotropic Etching of SiO2 by Excimer Laser Irradiation, Porc. of Dry Process Symp., pp.39-pp.43, 19850401
  248. Laser-Induced Photochemical Etching of GaAs and Its Characterization by X-Ray Photoelectron Spectroscopy and Luminescence, Proc. 16th Int. Symp. on GaAs and Related Compounds, pp.325-pp.330, 19850401
  249. ★, Laser-Induced Photochemical Etching of SiO2 Studied by X-Ray Photoelectron Spectroscopy, Appl. Phys. Lett., 47巻, 4号, pp.389-pp.391, 19850401
  250. Characterization of Photochemical Processing, J Vac Sci Technol B, 3巻, 5号, pp.1445-pp.1449, 19850401
  251. Dependence of Interface State Density on the Atomic Roughness at the Si/SiO2 Interface, Surf. Sci., 142巻, 1-3号, pp.545-pp.555, 19840401
  252. Laser-Induced Chemical Dry Etching of SiO2, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp.451-pp.454, 19840401
  253. Granular Si-Rich Oxide and Si-Rich Nitride Films Deposited by Plasma CVD, Porc. of Dry Process Symp., pp.35-pp.40, 19830401
  254. Characterization of Plasma-Enhanced Chemically-Vapor-Deposited Silicon-Rich Silicon Dioxide/Thermal Silicon Dioxide Dual Dielectric System, J. Appl. Phys., 54巻, 12号, pp.7058-pp.7065, 19830401
  255. Interface Barrier Heights in Metal-Aluminum Nitride-Silicon Structure by Internal Photoemission, J. Appl. Phys., 53巻, 5号, pp.3694-pp.3697, 19820401
  256. Internal Photoemission in the Anodic Oxide/GaAs Interface, Appl. Phys. Lett., 38巻, 2号, pp.97-pp.99, 19810401
  257. ★, Electron Spin Resonance in Discharge-Produced Silicon Nitride, Jpn. J. Appl. Phys., 20巻, 1号, pp.L35-L37, 19810401
  258. Optical Emission Spectroscopy of the SiH4-NH3-H2 Plasma During the Growth of Silicon Nitride, Jpn. J. Appl. Phys., 20巻, 2号, pp.L117-L120, 19810401
  259. Characterization of Plasma Deposited SiN Films, Proc. of Symp. on Plasma Processing, pp.13-pp.25, 19810401
  260. ★, Characterization of Plasma-Deposited Silicon Nitride Films, J. Appl. Phys., 51巻, 10号, pp.5470-pp.5474, 19800401
  261. GaAs MOS Structures with Al2O3 Grown by Molecular Beam Reaction under UV Excitation, Thin Solid Films, 56巻, 1-2号, pp.81-pp.88, 19790401
  262. GaAs MOS Structures with Al2O3 Grown by Molecular Beam Reaction, Surface Science, 86巻, 8号, pp.835-pp.840, 1979,4,1
  263. Surface States in GaAs Tunnel MIS Structures, Phys. Stat. Sol. (a), 42巻, 2号, pp.483-pp.488, 1977,4,1

著書等出版物

  1. 2001年06月, シリコン熱酸化膜のホットエレクトロン耐性に及ぼす有機ガス汚染の影響 , 社団法人 電子情報通信学会, 2001年, 06, 調査報告書, 共著, 横山 新 芝原 健太郎 中島 安理 吉川 公麿 角南英夫 , 6
  2. 1998年04月, 二重障壁極微細MOSトランジスタの電気伝導 , 電子情報通信学会, 1998年, 04, 調査報告書, 共著, 羽田野剛司 野村明弘 吉田昌義 中島 安理 芝原 健太郎 横山 新 , 5
  3. 2002年10月, クリーンルーム設計と運転・維持管理、第11章クリーンルームの技術動向と今後の展望 第1節スーパークリーンルーム , (株)情報機構、, 2002年, 10, 単行本(一般書), 共編著, 横山 新 藤井敏昭 , 12
  4. 2001年06月, p-MOSFETのための原子層成長Si窒化膜/SiO2スタックゲート絶縁膜の研究 , 社団法人 電子情報通信学会, 2001年, 06, 調査報告書, 共著, 吉元隆史 木寺俊郎 QuaziD.M.Khosru 中島 安理 横山 新 , 6
  5. 2002年,6月, Bipolar Voltage Pulse Induced Current - A Means for Reliable Extraction of Interface Trap Distribution in Ultrathin Oxides MOS Structure , 電子情報通信学会, 2002年, 06, 調査報告書, 共著, quazi d.m.khosru 中島 安理 横山 新 , 6

招待講演、口頭・ポスター発表等

  1. Integrated Differential Si-Ring Resonator Biosensors for Selective Detection of Antigen-Antibody Reaction, 横山 新, 谷口智哉、池田 丈、黒田章夫, OPTICS & PHOTONICS International Congress 2016, 2016年05月17日, 招待, 英語, 横浜 パシフィコ横浜
  2. シリコンフォトニクスによる光スイッチおよびバイオセンサー, 横山 新, 東京都市大学 私立大学戦略的研究基盤形成支援事業「ゲルマニウムを基幹材料とするナノエレクトロニクス先端融合研究基盤の形成」キックオフシンポジウム, 2015年12月14日, 招待, 日本語, 東京都市大学総合研究所, 東京都市大学総合研究所 コンファレンスホール, Si光共振器(リングおよびフォトニック結晶)を用いた光スイッチおよびバイオセンサーに関する研究成果を紹介する。光スイッチは、p/n接合の順・逆バイアス動作、及び磁気光学材料Bi3Fe5O12 (BIG) を被着させた磁気応答型光スイッチ、及び差動型Siリング共振器バイオセンサーについて述べる。
  3. 集積化光バイオセンサ, 横山 新, 谷口智哉, 池田 丈, 黒田章夫, 応用物理学会第55回光波センシング技術研究会講演会, 2015年06月09日, 招待, 日本語, 応用物理学会光波センシング技術研究会, 東京 理科大学 神楽坂キャンパス 森戸記念館, シリコンリング共振器バイオセンサーに関する研究紹介, プレプリント, 講演予稿集
  4. Si Ring Resonator and Photonic Crystal Resonator Biosensors, Shin Yokoyama, Takeshi Ikeda, Akio Kuroda, Third International Symposium on Semiconductor Materials and Devices, 2015年02月04日, 通常, 英語, Anna University, India, Anna University, Chennai, India, Biosensors using Si Ring Resonator and Photonic Crystal Resonator are introduced., プレプリント
  5. 広島大学ナノデバイス・バイオ融合科学研究所の研究紹介, 横山 新, 中島 安理、黒木 伸一郎, 日本材料学会講演会, 2015年01月24日, 招待, 日本語, 広島大学東広島キャンパス学士会館, 広島大学ナノデバイス・バイオ融合科学研究所における材料関連の研究紹介, 発表資料
  6. Siリングおよびフォトニック結晶共振器バイオセンサー, 横山 新, 横山 新, 池田 丈, 黒田 章夫, 第22回シリコン・フォトニクス研究会, 2015年01月22日, 招待, 日本語, 電子情報通信学会シリコン・フォトニクス時限研究専門委員会, 東広島市, シリコンリングおよびフォトニック共振器バイオセンサーの紹介, プレプリント
  7. Optical Switches and Biosensors using Silicon Photonics, Shin Yokoyama, Yoshiteru Amemiya, Tetsuo Tabei, Takeshi Ikeda, and Akio Kuroda, 第75回応用物理学会秋季学術講演会, 2014年09月20日, 招待, 英語, 応用物理学会, 北海道大学, シリコンフォトニクスを用いたバイオセンサーおよび光スイッチの研究成果発表, プレプリント
  8. シリコンフォトニクスを用いた光共振器集積化バイオセンサー, 横山 新, 池田 丈, 黒田章夫, 電子情報通信学会, 2014年03月18日, 招待, 日本語, 電子情報通信学会, 新潟大学, シリコンリング共振器バイオセンサーの紹介, プレプリント, 予稿集
  9. ナノデバイス・バイオ融合科学研究所における バイオ関連研究の紹介, 横山 新, 吉川公麿,中島安理,小出哲士, 第11回プラズモニクスシンポジウム, 2014年01月24日, 招待, 日本語, プラズモニクス研究会, 広島大学東広島キャンパス, 広島大学ナノデバイス・バイオ融合科学研究所のバイオ関連の研究現状を紹介した。, プレプリント
  10. シリコンフォトニクスを用いた集積化バイオセンサー, 横山 新, 第3回フォトニックデバイス・応用技術研究会, 2013年10月09日, 招待, 日本語, 一般財団法人光産業技術振興協会, 上智大学, シリコンフォトニクスを利用したバイオセンサーの研究紹介
  11. Siリング光共振器を用いたバイオセンサ, 横山 新, 池田 丈,黒田章夫, 電子情報通信学会総合大会, 2011年03月14日, 招待, 日本語, 電子情報通信学会, 東京都市大学, Siリング光共振器を用いたバイオセンサについて発表した, 発表資料, 予稿集
  12. Silicon Nanodevices and Their Bio Application, Shin Yokoyama, T. Kikkawa, A. Nakajima, The 7th nano Bio Chemistry Symposium, Hirhoshima University, 2010年12月04日, 招待, 英語, Hiroshima University, 広島大学東広島キャンパス, シリコンナノデバイスとそのバイオ応用に関する発表, プレプリント, 予稿集
  13. LSI配線の課題と光配線, 横山 新, 雨宮嘉照, 電子情報通信学会研究会, 2010年11月29日, 招待, 日本語, 電子情報通信学会, 九州大学, 現在のLSIの問題点として,長距離(グローバル)金属配線技術の増大する配線遅延と消費電力を指摘し,その解決法として,伝送線路,定在波発振法,光配線を紹介した., プレプリント, 信学技法IEICE Technical Report CPM2010-128, ICD2010-87(2010-11). pp. 25-30.
  14. チップ内光配線, 横山 新, 電子情報通信学会総合大会, 2009年03月19日, 招待, 日本語, 電子情報通信学会, 愛媛大学, Siリング共振器を用いたチップ内光配線について報告した。, プレプリント, 信学技報
  15. LSI配線とシリコンフォトニクス, 横山 新, 2009年01月30日, 招待, 日本語
  16. LSI配線技術とシリコンフォトニクス, 横山 新, 2008年07月18日, 招待, 日本語
  17. LSI配線技術とシリコンフォトニクス, 横山 新, 2008年07月10日, 招待, 日本語
  18. LSI配線技術とシリコンフォトニクス, 横山 新, 2008年02月21日, 招待, 日本語
  19. ナノデバイスにおける薄膜成長技術の諸問題, 横山 新, 日本化学工学会, 2001年04月, 招待, 日本語
  20. Atomic-Layer Deposition of Silicon Nitride, 横山 新, "IUMRS Int. Conf. on Electronic Materials 1998 (IUMRS-ICEM-98) (Cheju, Korea)", 1998年08月, 招待, 英語
  21. Optical Waveguides on Si Chips, 横山 新, "The 41st National Symposium, American Vacuum Society (Denver, Colorado)", 1995年10月, 招待, 英語
  22. Three-Dimensional and Two-Dimensional Optical Interconnections in Si LSI, 横山 新, "International Research Workshop on Future Information Processing Technologies (Porvoo, Finland)", 1995年09月, 招待, 英語
  23. GaAs/Si Optoelectronic Design and Development at Hiroshima University, 横山 新, "Intern. Workshop of Semiconductor Characterization: Present Status and Future Needs (Gaithersburg, USA)", 1995年01月, 招待, 英語

受賞

  1. 2006年08月, 日本エアロゾル学会論文賞, 日本エアロゾル学会会長・奥山喜久夫, 新規変調プラズマによるSiH4/H2プラズマリアクター内のダスト微粒子の抑制
  2. 2001年07月, 日本エアロゾル学会論文賞, 日本エアロゾル学会会長・岩坂泰信, 半導体搬送ボックスのUV/光電子法によるクリーン化とMOSデバイス」評価
  3. 2000年08月, 日本エアロゾル学会特別賞(井伊谷賞), 日本エアロゾル学会会長・笠原三紀夫, 半導体表面清浄化技術における自然光の作用と表面制御ー光遮断によるSiウェハの自然酸化抑制ー
  4. 2000年04月, 日本空気清浄協会会長奨励賞, 日本空気清浄協会会長・吉澤晋, UV/光電子・光触媒クリーン化法のMOSキャパシタ電気特性への影響ー容器材質依存性ー

取得

  1. 特許権, 特許4215812, 2008年11月14日, 光集積回路装置
  2. 特許権, 特許4227667, 2008年12月05日, 光ニューラルネットワーク
  3. 特許権, 特許4315247, 2009年05月29日, 炭素を含む材料から成る突起を形成する方法、炭素を含む材料から成る突起を有する基板生産物、および電子放出素子
  4. 特許権, 特許4392051, 2009年10月16日, 発光素子およびその製造方法
  5. 特許権, 特許4392052, 2009年10月16日, 発光素子およびその製造方法
  6. 特許権, 特許4427589, 2009年12月18日, 光集積回路装置
  7. 特許権, 特許4445556, 2010年01月22日, 発光素子およびその製造方法
  8. 特許権, US:7720389, 2010年05月18日, 光集積回路装置
  9. 特許権, 特許4596451, 2010年10月01日, 突起構造の形成方法、突起構造、および電子放出素子
  10. 特許権, US:7847225, 2010年12月07日, 光ニューラルネットワーク
  11. 特許権, US:7907847, 2011年03月15日, 光集積回路装置
  12. 特許権, US:8044382, 2011年10月25日, 発光素子およびその製造方法
  13. 特許権, US:8330141, 2012年12月11日, 発光素子およびその製造方法
  14. 特許権, US:8368046, 2013年02月05日, 発光素子およびその製造方法
  15. 特許権, US:8470693, 2013年06月25日, 量子ドットの製造方法
  16. 特許権, 特許5480512, 2014年02月21日, 光検出器およびそれを備えた光集積回路装置
  17. 特許権, 台湾特許発明第153080号, 基板表面酸化防止の方法および装置(防止基板表面酸化之方法及装置)
  18. 特許権, 8980658, 2015年03月17日, 発光素子およびその製造方法

社会活動

委員会等委員歴

  1. 代議員, 2014年02月, 2016年01月, 公益社団法人応用物理学会
  2. 代議員, 2012年02月, 2014年01月, 公益社団法人応用物理学会
  3. 校内理事, 2012年08月, 2014年06月, (社)広島工業会
  4. 応用物理学会教育企画委員会委員, 2016年.4月, 応用物理学会