吉川 公麿TAKAMARO KIKKAWA

Last Updated :2019/11/01

所属・職名
ナノデバイス・バイオ融合科学研究所ナノ集積科学研究部門特任教授
メールアドレス
kikkawathiroshima-u.ac.jp

基本情報

主な職歴

  • 1976年04月01日, 日本電気株式会社, 技術開発
  • 1983年08月01日, マサチューセッツ工科大学, 客員研究員
  • 1988年07月01日, 日本電気(株)マイクロエレクトロニクス研究所, 研究課長
  • 1994年07月01日, 日本電気(株)ULSIデバイス開発研究所, 部長
  • 1998年07月01日, 広島大学ナノデバイス・システム研究センター, 教授
  • 2001年08月01日, (独)産業技術総合研究所, 主任研究員
  • 2007年04月01日, 広島大学ナノデバイス・システム研究センター, センター長
  • 2007年04月01日, 広島大学大学院大学院先端物質科学研究科, 副研究科長
  • 2008年05月01日, 広島大学ナノデバイス・バイオ融合科学研究所, 所長

学歴

  • 静岡大学, 工学研究科, 電子工学, 日本, 1974年04月, 1976年03月
  • 静岡大学, 工学部, 電子工学, 日本, 1970年04月, 1974年03月

学位

  • 博士(工学)(東京工業大学)
  • 工学修士(静岡大学)

研究分野

  • 工学 / 電気電子工学 / 電子デバイス・電子機器

研究キーワード

  • 半導体集積回路
  • 無線配線
  • 誘電体膜
  • アンテナ電波伝搬
  • 生体医工学
  • 乳癌検出システム

研究活動

学術論文(★は代表的な論文)

  1. Complex permittivities of breast tumor tissues obtained from cancer surgeries, APPLIED PHYSICS LETTERS, 104巻, 25号, 20140623
  2. Three-dimensional confocal imaging for breast cancer detection using CMOS Gaussian monocycle pulse transmitter and 4 x 4 ultra wideband antenna array with impedance matching layer, JAPANESE JOURNAL OF APPLIED PHYSICS, 53巻, 4号, 201404
  3. 5-Gb/s and 10-GHz Center-Frequency Gaussian Monocycle Pulse Transmission Using 65-nm Logic CMOS With On-Chip Dipole Antenna and High-kappa Interposer, IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 4巻, 7号, pp. 1193-1200, 201407
  4. Characteristics of Poly-Si Thin Film Transistors with Highly Biaxially Oriented Linearly Arranged Poly-Si Thin Films Using Double Line Beam Continuous-Wave Laser Lateral Crystallization, ECS Transactions, 64 (10) 39-44 (2014), 64巻, pp. 39-44, 2014
  5. Low-k Mesoporous Pure Silica Zeolite with High Elastic Modulus Using 1,3,5,7-Tetra-Methyl-Cyclo-Tetra-Siloxane and Ultraviolet Treatments, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2巻, 4号, pp. N89-N92, 2013
  6. Advanced DC-SF Cell Technology for 3-D NAND Flash, IEEE TRANSACTIONS ON ELECTRON DEVICES, 60巻, 4号, pp. 1327-1333, 201304
  7. Scaling challenge of Self-Aligned STI cell (SA-STI cell) for NAND flash memories, SOLID-STATE ELECTRONICS, 82巻, pp. 54-62, 201304
  8. Finite Element Model of Surface Acoustic Wave Method for Mechanical Characterization of Patterned Thin Films of the Ultra-Large Scaled Integrated Interconnect, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 13巻, 2号, pp. 1602-1606, 201302
  9. 125 mW 102.4 GS/s Ultra-High-Speed Sampling Circuit for Complementary Metal-Oxide-Semiconductor Breast Cancer Detection System, JAPANESE JOURNAL OF APPLIED PHYSICS, 52巻, 4号, 201304
  10. Ultra-wide band microwave image reconstruction for early breast cancer detection by norm constrained capon beamforming, MATHEMATICAL AND COMPUTER MODELLING, 58巻, 1-2号, pp. 403-408, 201307
  11. A Compact 4 x 4 Planar UWB Antenna Array for 3-D Breast Cancer Detection, IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS, 12巻, pp. 733-736, 2013
  12. IMPROVED BEAMFORMING ALGORITHM FOR IMAGING RECONSTRUCTION FOR EARLY BREAST CANCER DETECTION BY UWB, JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, 22巻, 10号, 201312
  13. Model Pulses for Performance Prediction of Digital Microelectronic Systems, IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2巻, 11号, pp. 1859-1870, 112012
  14. Young's modulus evaluation by SAWs for porous silica low-k film with cesium doping, MICROELECTRONIC ENGINEERING, 88巻, 5号, pp. 666-670, 201105
  15. Wireless inter-chip interconnects, MICROELECTRONIC ENGINEERING, 88巻, 5号, pp. 767-774, 201105
  16. A 800 Mb/s CMOS detection scheme for UWB impulse-radio communication, AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 65巻, 5号, pp. 398-405, 2011
  17. A 5.4-9.2 GHz 19.5 dB Complementary Metal-Oxide-Semiconductor Ultrawide-Band Receiver Front-End Low-Noise Amplifier, JAPANESE JOURNAL OF APPLIED PHYSICS, 50巻, 4号, 201104
  18. Confocal Imaging System Using High-Speed Sampling Circuit and Ultra-Wideband Slot Antenna, JAPANESE JOURNAL OF APPLIED PHYSICS, 50巻, 4号, 201104
  19. Influence of Synthesis Process on Mechanical and Electrical Characteristics of Mesoporous Pure Silica-Zeolite, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 158巻, 6号, pp. H659-H665, 2011
  20. A 1 Gb/s 3.8 pJ/bit Differential Input BPSK Detection Scheme for UWB-IR Communication Using 180 nm CMOS Technology, IEICE TRANSACTIONS ON ELECTRONICS, E94C巻, 2号, pp. 240-247, 201102
  21. Ionic Vibration Spectrum of Nanocrystalline MEL Pure Silica Zeolite Film, JOURNAL OF PHYSICAL CHEMISTRY C, 115巻, 23号, pp. 11569-11574, 20110616
  22. Molecular Bonding Structure of Alkylene-Bridged Organosilicate Glass Films, JOURNAL OF PHYSICAL CHEMISTRY C, 115巻, 26号, pp. 12981-12989, 20110707
  23. A 2 Gb/s 1.8 pJ/bit Differential BPSK UWB-IR Transmitter Using 65 nm CMOS Technology, IEICE TRANSACTIONS ON ELECTRONICS, E94C巻, 6号, pp. 977-984, 201106
  24. 32 GS/s ultra-high-speed UWB sampling circuit for portable imaging system, ELECTRONICS LETTERS, 47巻, 3号, pp. 165-U24, 2011
  25. A 500 Mb/s Differential Input Non-coherent BPSK Receiver for UWB-IR Communication, IEICE TRANSACTIONS ON ELECTRONICS, E94C巻, 4号, pp. 567-574, 201104
  26. Ultralow-k/Cu Damascene Multilevel Interconnects Using High Porosity and High Modulus Self-Assembled Porous Silica, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157巻, 5号, pp. H519-H525, 2010
  27. A 3.5-4.5 GHz Complementary Metal-Oxide-Semiconductor Ultrawideband Receiver Frontend Low-Noise Amplifier with On-Chip Integrated Antenna for Interchip Communication, JAPANESE JOURNAL OF APPLIED PHYSICS, 49巻, 4号, 2010
  28. Confocal Imaging Using Ultra Wideband Antenna Array on Si Substrates for Breast Cancer Detection, JAPANESE JOURNAL OF APPLIED PHYSICS, 49巻, 9号, 2010
  29. Infrared spectroscopic analysis of siloxane network modification of mesoporous silica film by silylation and cesium doping, THIN SOLID FILMS, 519巻, 2号, pp. 674-680, 20101101
  30. Effect of Silylation Hardening on the Electrical Characteristics of Mesoporous Pure Silica Zeolite Film, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156巻, 2号, pp. H98-H105, 2009
  31. A Single-Chip Ultra-Wideband Receiver With Silicon Integrated Antennas for Inter-Chip Wireless Interconnection, IEEE JOURNAL OF SOLID-STATE CIRCUITS, 44巻, 2号, pp. 382-393, 200902
  32. Fabrication of Si Nanowire Field-Effect Transistor for Highly Sensitive, Label-Free Biosensing, JAPANESE JOURNAL OF APPLIED PHYSICS, 48巻, 6号, 200906
  33. Properties of Sr7Nb13O36/Nb2O5/Sr7Nb13O36 Laminated Films for Gigabit Memory Capacitors, JAPANESE JOURNAL OF APPLIED PHYSICS, 48巻, 7号, 200907
  34. Integration of Self-Assembled Porous Silica in Low-k/Cu Damascene Interconnects, JAPANESE JOURNAL OF APPLIED PHYSICS, 48巻, 9号, 200909
  35. Properties of TiO2/LaxTi1-xOy/TiO2 Stacked Thin Films, JAPANESE JOURNAL OF APPLIED PHYSICS, 48巻, 10号, 102009
  36. Quantitative Determination of Complex Dielectric Function of Amorphous Silicon Dioxide on Silicon Substrate from Transmission Spectrum, JAPANESE JOURNAL OF APPLIED PHYSICS, 48巻, 12号, 122009
  37. Influence of the organism interface on the breast cancer detection by UWB, APPLIED SURFACE SCIENCE, 255巻, 2号, pp. 597-599, 20081115
  38. Pure Silica Zeolite Films Prepared by a Vapor Phase Transport Method, JAPANESE JOURNAL OF APPLIED PHYSICS, 47巻, 11号, pp. 8360-8363, 112008
  39. Effect of Water Adsorption on Electrical Characteristics of Porous Silica Films, JAPANESE JOURNAL OF APPLIED PHYSICS, 47巻, 11号, pp. 8364-8368, 112008
  40. Gaussian monocycle pulse transmitter using 0.18 mu m CMOS technology with on-chip integrated antennas for inter-chip UWB communication, IEEE JOURNAL OF SOLID-STATE CIRCUITS, 43巻, 5号, pp. 1303-1312, 200805
  41. Early breast cancer detection by ultrawide band imaging with dispersion consideration, JAPANESE JOURNAL OF APPLIED PHYSICS, 47巻, 4号, pp. 3209-3213, 200804
  42. Effect of phosphorus atom in self-assembled monolayer as a drift barrier for advanced copper interconnects, APPLIED PHYSICS EXPRESS, 1巻, 6号, 200807
  43. Via-shape-control for copper dual-damascene interconnects with low-k organic film, IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 21巻, 2号, pp. 256-262, 200805
  44. Electrical reliabilities of highly cross-linked porous silica film with cesium doping, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 155巻, 11号, pp. G258-G264, 2008
  45. Theoretical investigation of maximum field strength in porous silica dielectric, JAPANESE JOURNAL OF APPLIED PHYSICS, 47巻, 7号, pp. 5314-5319, 200807
  46. Plasma-enhanced-polymerization thin-film as a drift barrier for Cu ions, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46巻, 4B号, pp. 1951-1954, 200704
  47. CoWP as a drift barrier for Cu ions studied by electric measurements, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 154巻, 8号, pp. H672-H674, 2007
  48. Electrical characteristics of mesoporous pure-silica-zeolite film, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46巻, 9A号, pp. 5742-5746, 200709
  49. A Cu electroplating solution for porous Low-k/Cu damascene interconnects, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 154巻, 12号, pp. D692-D696, 2007
  50. Effect of bridging groups of precursors on modulus improvement in plasma-enhanced copolymerized low-k films, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 154巻, 3号, pp. H198-H201, 2007
  51. Recovery processes of CMP-induced damages for copper/porous silica damascene interconnects, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 154巻, 5号, pp. H400-H405, 2007
  52. Novel organosiloxane vapor annealing process for improving properties of porous low-k films, THIN SOLID FILMS, 515巻, 12号, pp. 5019-5024, 20070423
  53. Copper barrier properties of a low-dielectric-constant organocyclosiloxane prepared by plasma-enhanced polymerization, APPLIED PHYSICS LETTERS, 90巻, 18号, 20070430
  54. An organic low-k film deposited by plasma-enhanced copolymerization, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 154巻, 3号, pp. H147-H152, 2007
  55. Plasma-enhanced co-polymerization of organo-siloxane and hydrocarbon for low-k/Cu interconnects, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46巻, 7A号, pp. 4064-4069, 200707
  56. Effect of moisture adsorption on the properties of porous-silica ultralow-k films, MICROELECTRONIC ENGINEERING, 83巻, 11-12号, pp. 2126-2129, 112006
  57. Removal of etching/ashing residues and ashing/wet-clean damage in porous silica low-k films, MICROELECTRONIC ENGINEERING, 83巻, 11-12号, pp. 2142-2145, 112006
  58. Effect of frictional force vector on delamination in Cu/low-k integration, MICROELECTRONIC ENGINEERING, 83巻, 11-12号, pp. 2146-2149, 112006
  59. A 2.4 GHz differential wavelet generator in 0.18 mu m complementary metal-oxide-semiconductor for 1.4 Gbps ultra-wideband impulse radio in wireless inter/intra-chip data communication, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45巻, 4B号, pp. 3279-3285, 200604
  60. Influence of CMP chemicals on the properties of porous silica low-k films, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153巻, 7号, pp. G692-G696, 2006
  61. Measurement and analysis of water adsorption in porous silica films, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153巻, 8号, pp. G759-G764, 2006
  62. Signal transmission characteristics between Si chips with air gap using Si integrated dipole antennas, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45巻, 6A号, pp. 4968-4976, 200606
  63. Influence of Cu electroplating solution on self-assembled porous silica low-k films, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153巻, 9号, pp. G870-G873, 2006
  64. Analysis of transmission characteristics of Gaussian monocycle pulses for silicon integrated antennas, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45巻, 4B号, pp. 3272-3278, 200604
  65. Recovery from plasma-process-induced damage in porous silica low-k films by organosiloxane vapor annealing, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45巻, 8A号, pp. 6231-6235, 200608
  66. Plasma etch rates of porous silica low-k films with different dielectric constants, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45巻, 11号, pp. 8873-8875, 112006
  67. Vapor phase reactions in polymerization plasma for divinyisiloxane-bis-benzocyclobutene film deposition, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 24巻, 6号, pp. 2192-2198, 112006
  68. Dependences of Young's modulus of porous silica low dielectric constant films on skeletal structure and porosity, JOURNAL OF APPLIED PHYSICS, 100巻, 12号, 20061215
  69. Theoretical investigation of dielectric constant and elastic modulus of three-dimensional isotropic porous silica films with cubic and disordered pore arrangements, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44巻, 8号, pp. 5982-5986, 200508
  70. Ultrawideband characteristics of fractal dipole antennas integrated on Si for ULSI wireless interconnects, IEEE ELECTRON DEVICE LETTERS, 26巻, 10号, pp. 767-769, 102005
  71. Theoretical investigation of dielectric constant and elastic modulus of two-dimensional periodic porous silica films with elliptical cylindrical pores, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44巻, 3号, pp. 1161-1165, 200503
  72. Theoretical investigation into effects of pore size and pore position distributions on dielectric constant and elastic modulus of two-dimensional periodic porous silica films, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44巻, 3号, pp. 1166-1168, 200503
  73. Characterization of photosensitive low-k films using electron-beam lithography, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 152巻, 4号, pp. G281-G285, 2005
  74. A CMOS monocycle pulse generation circuit in a ultra-wideband transmitter for intra/inter chip wireless interconnection, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44巻, 4B号, pp. 2104-2108, 200504
  75. Efficient design of integrated antennas on Si for on-chip wireless interconnects in multi-layer metal process, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44巻, 4B号, pp. 2756-2760, 200504
  76. Transmission characteristics of Gaussian monocycle pulses for inter-chip wireless interconnections using integrated antennas, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44巻, 4B号, pp. 2761-2765, 200504
  77. Skeletal silica characterization in porous-silica low-dielectric-constant films by infrared spectroscopic ellipsometry, JOURNAL OF APPLIED PHYSICS, 97巻, 11号, 2005
  78. Influence of humidity on electrical characteristics of self-assembled porous silica low-k films, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 152巻, 7号, pp. G560-G566, 2005
  79. Influence of slurry chemistry on frictional force in copper chemical mechanical polishing, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 152巻, 9号, pp. G695-G697, 2005
  80. Molecular orbital calculation of the elastic modulus and the dielectric constant for ultra low-k organic polymers, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43巻, 2号, pp. 504-507, 200402
  81. Mechanical property determination of thin porous low-k films by twin-transducer laser generated surface acoustic waves, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43巻, 2号, pp. 508-513, 200402
  82. Control of pore structures in periodic porous silica low-k films, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43巻, 4A号, pp. 1323-1326, 200404
  83. Nondestructive characterization of a series of periodic porous silica films by in situ spectroscopic ellipsometry in a vapor cell, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43巻, 4A号, pp. 1327-1329, 200404
  84. Role of frictional force on the polishing rate of Cu chemical mechanical polishing, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43巻, 4B号, pp. 1813-1819, 200404
  85. A novel photosensitive porous low-k interlayer dielectric film, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43巻, 4B号, pp. 1820-1824, 200404
  86. Characteristics of Si integrated antenna for inter-chip wireless interconnection, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43巻, 4B号, pp. 2283-2287, 200404
  87. Effect of high-resistivity Si substrate on antenna transmission gain for on-chip wireless interconnects, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43巻, 4B号, pp. 2297-2301, 200404
  88. Mechanical property and network structure of porous silica films, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43巻, 5A号, pp. 2453-2456, 200405
  89. Structural and electrical properties of ultralow-k, disordered mesoporous silica films synthesized using nonionic templates, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 151巻, 10号, pp. F248-F251, 2004
  90. Influence of bottom electrodes and interface layers on (Ba,Sr)TiO3 thin film leakage current, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43巻, 8A号, pp. 5221-5230, 200408
  91. Transient capacitance spectroscopy of copper-ion-drifted methylsilsesquiazane-methylsilsesquioxane interlayer dielectrics, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43巻, 12号, pp. 8026-8027, 122004
  92. Effects of Surfactants on the properties of ordered periodic porous silica films, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42巻, 4B号, pp. 1840-1842, 200304
  93. Low-k dielectric film Patterning by X-ray lithography, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42巻, 4B号, pp. 1907-1910, 200304
  94. Mechanical properties of periodic porous silica low-k films determined by the twin-transducer surface acoustic wave technique, REVIEW OF SCIENTIFIC INSTRUMENTS, 74巻, 10号, pp. 4539-4541, 102003
  95. Robust self-assembled monolayer as diffusion barrier for copper metallization, APPLIED PHYSICS LETTERS, 83巻, 25号, pp. 5181-5183, 20031222
  96. Organic contamination dependence of process-induced interface trap generation in ultrathin oxide metal oxide semiconductor transistors, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42巻, 12A号, pp. L1429-L1432, 20031201
  97. Direct observation of electromigration and induced stress in Cu nanowire, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42巻, 12A号, pp. L1433-L1435, 20031201
  98. ★, Direct patterning of photosensitive low-dielectric-constant films using electron beam lithography, Appl. Phys. Lett=, 78巻, 17号, pp. 2557-2559, 20010401
  99. Current and Future Low-k Dielectrics for Cu interconnects, Technical Digest of Internatinal Electron Devices Meeting= IEEE= New York=, pp. 253-256, 20000401
  100. Inductive-coulped RF magnetron palsma deposition of BST for decoupling capacitors, International conference on solido-state materials and devices (Japanes Society of Applied Physics), pp. 158-159, 20000401
  101. Copper ion drift rates in porous methylsilsesquiazane dielectric film, International conference on solido-state materials and devices (Japanes Society of Applied Physics), pp. 34-35, 20000401
  102. Measurement of Copper Drift in Methylsilsesquioxane Dielectric Films, International conference on solido-state materials and devices (Japanes Society of Applied Physics), pp. 504-505, 19990401
  103. A New Cobalt Salicide Technology for 0.15 um CMOS Devices, IEEE Trans. on Electron Devices, 45巻, 11号, pp. 2312-2318, 19980401
  104. Cleaning of CHF3 Plasma-Etched SiO2/SiN/Cu Via Structures with Dilute Hydrofluoric Acid Solutions, Journal of Electrochemical Society, 144巻, 7号, pp. 2565-2572, 19970401
  105. Low contact resistance metallization for gigabit scale DRAM using fully dry cleaning by Ar/H2 ECR plasma, IEEE Trans. on Electron Devices, ED-44巻, pp. 588-594, 19970401
  106. Dual Damascene Interconnects with 0.28μm-Vias Using In-sith Copper Doped Aluminum Chemical Vapor Deposition, Technical Digest of Internatinal Electron Devices Meeting= IEEE= New York=, pp. 781-784, 19970401
  107. Ultra-Low Resistance Direct Contact Cu Via Technology Using In-situ Chemical Vapor Cleaning, Technical Digest of International Electron Devices Meeting (IEEE= New York= 1997), pp. 59-60, 19970401
  108. Epitaxial cobalt silicide formation using high temperature sputtering and vacuum annealing, Transactions of the Materials Reserch Society of Japan, vol.440巻, pp. 435-440, 19970401
  109. Al-Ge-Cu multilevel damascene process using low-temperature reflow sputtering and chemical mechanical polishing, IEEE Trans. Electron Devices, 43巻, 5号, pp. 739-745, 19960401
  110. Electromigration characteristics for Al-Ge-Cu, J. Electrochem. Soc., 143巻, 3号, pp. 1088-1092, 19960401
  111. Barrier metal free copper damascene interconnection technology using atmospheric copper reflow and nitrogen doping in SiOF film, Technical Digest of Internatinal Electron Devices Meeting= IEEE= New York=, pp. 365-368, 19960401
  112. A novel TiN/Ti contact plug technology for gigabit scale DRAM using Ti-PECVD and TiN-LPCVD, Technical Digest of International Electron Devices Meeting (IEEE= New York= 1996), pp. 361-364, 19960401
  113. Phase transformations of titanium sicilicide induced by high temperature sputtering, Proceedings of Materials Research Society Fall Meeting=( Materials Reseach Society= Pittsburgh= PA= 1995), pp. 272-272, 19960401
  114. Observation of sidewall contamination in submicron holes by thermal desorption spectroscopy, Journal of Vac. Sci. Technol. A=, 13,巻, .6号, pp. 2197-2200,, 19950401
  115. Thermal desorption spectroscopic analysis for residual chlorine on Al-Si-Cu after ECR plasma etching, Journal of Vac. Sci. Technol. A=, 13巻, 6号, pp. 2935-2938, 19950401
  116. Reactive ion etching of silicon oxynitride formed by plasma-enhanced chemical vapor deposition, Journal of Vac. Sci. Technol. A=, 13巻, .4号, pp. 1447-1450, 19950401
  117. Alリフローによるコンタクト埋めこみ特性に与えるコンタクト形状およびリフロー下地膜の影響, 電子情報通信学会論文誌D・I, J78-C-II,巻, 5号, pp. 273-280, 19950401
  118. コンタクト底部のSi表面状態によるコンタクト抵抗の劣化, 電子情報通信学会論文誌D・I, J78-C-II巻, 5号, pp. 244-250, 19950401
  119. Direct analysis of contamination in submicron contact holes by thermal desorption spectroscopy, Journal of Vac. Sci. Technol. A=, 13巻, 1号, pp. 42-46, 19950401
  120. W/Ti self-aligned silicidation process for 0.25 um CMOS, NEC Journal of Research and Development, .36巻, 1号, pp. 114-121, 19950401
  121. An advanced technique for fabrication hemispherical grained (HSG) silicon storage electrodes, IEEE Transaction on Electron Devices, 42巻, 2号, pp. 295-300, 19950401
  122. Deep Subhalf-micron contact filling technology using control etching and collimated Ti sputtering techniques, Electrochemical Society (Hawai= Oct. 3-8= 2004), 142巻, 2号, pp. 664-668, 19950401
  123. Low contact resistance metallization for giga bit scale DRAMs using fully dry cleaning by Ar/H2 ECR plasma, Technical Digest of Internatinal Electron Devices Meeting= IEEE= New York=, pp. 695-698, 19950401
  124. A new cobalt salicide technology for 0.15um CMOS using high temperature sputtering and in-situ vacuum annealing, Technical Digest of International Electron Devices Meeting ( IEEE= New York= 1995), pp. 445-448, 19950401
  125. Sub-quarter micron titanium salicide technology with in-situ silicidation using high temperature sputtering, Proceedings of the Symposium on VLSI Technology=( IEEE= NewYork= 1995)=, pp. 57-58, 19950401
  126. 0.35 um Technologies in Japan, Proceedings of Materials Research Society Fall Meeting=( Materials Reseach Society= Pittsburgh= PA= 1995), pp. 199-208, 19950401
  127. Self-aligned tungsten strapped source drain and gate technology realizing the lowest sheet resistance for sub-quarter micron CMOS, Technical Digest of Internatinal Electron Devices Meeting= IEEE= New York=, pp. 493-496, 19940401
  128. Aluminum Germanium Copper multilevel damascene process using low temperature reflow sputtering and chemical mechanical polishing, Technical Digest of International Electron Devices Meeting ( IEEE= New York= 1994), pp. 101-104, 19940401
  129. Multilevel planarized-trench aluminum (PTA) interconnection using reflow sputtering and chemical mechanical polishing, Technical Digest of International Electron Devices Meeting ( IEEE= New York= 1995), pp. 285-288, 19940401
  130. A capacitor over bit line stacked capacitor cell usign local interconnect layer for 64 MbDRAM, IEICE Trans. Electron., E76-C巻, 4号, pp. 548-555, 19930401
  131. Study of submicron SrTiO3 patterning, Japanese Journal of Applied Physics, 32巻, (1B)号, pp. 376-379, 19930401
  132. Aluminum-arsenide precipitation in an arsenic-implanted aluminum thin film., Applied Physics Letters, 63巻, 11号, pp. 1495-1497, 19930401
  133. The influence of hydrogen evolution from plasma-deposited silicon? nitride on underlying aluminum deformations, Journal of Fisheries Science and Technology, 11巻, 2号, pp. 228-233, 19930401
  134. Effect of ion implantation on aluminum void suppression, Journal of Applied Physics, 73巻, 5号, pp. 2505-2509, 19930401
  135. A quarter-micron interconnection technology using TiN/Al-Si-Cu/TiN/Al-Si-Cu/TiN/Ti multilayer structure, IEEE Transaction on Electron Devices, ED-40巻, 2号, pp. 296-302, 19930401
  136. ★, Quarter-micron interconnection technologies for 256-Mbit DRAMs, Japanese Journal of Applied Physics, 32巻, 1号, pp. 338-345, 19930401
  137. ★, Device application and structure observation for hemispherical-grained Si, Journal of Applied Physics, 71,巻, pp. 3538-3543, 19920401
  138. The influence of underlying metals on the hydrogen evolution from plasma-deposited silicon nitride films, Journal of Applied Physics, 71巻, 2号, pp. 958-965, 19920401
  139. Low temperature etching of 0.2 um Al patterns using SiO2 mask, Japanese Journal of Applied Physics, l.31巻, 12B,号, pp. 4376-4380, 19920401
  140. Dependence of residual chlorine amount on Al grain size, Japanese Journal of Applied Physics, 31巻, 6B号, pp. 2041-2044, 19920401
  141. A new abrasive-free chemical-mechanical-polishing technique for aluminum metallization of ULSI devices, Technical Digest of Internatinal Electron Devices Meeting= IEEE= New York=, pp. 976-978, 19920401
  142. A quarter-micron planarized interconnection technology with self-aligned plug, Technical Digest of International Electron Devices Meeting =( IEEE= New York), pp. 305-308, 19920401
  143. A new cylindrical capacitor using hemispherical grained Si (HSG-Si) for 256 Mb DRAMs, Technical Digest of International Electron Devices Meeting =( IEEE= New York), pp. 259-262, 19920401
  144. Hemispherical grained silicon (HSG-Si) formation on in-situ phosphorous? doped amorphous-Si using the seeding method, Extended Abstracts of the 21st Conference on Solid State Devices and Materials, pp. .422-424, 19920401
  145. Submicron SrTiO3 patterning by reactive ion etching with Cl2 and SF6, Extended Abstracts of the 19th Conference on Solid State Devices and Materials, pp. 554-566, 19920401
  146. Ultra-thin? oxide/nitride/oxide/nitride multilayer films for megabit DRAM capacitors, Extended Abstracts of Conference on Solid State Devices and Materials=( Japan Society of Applied Physics= Tokyo), pp. 67-69., 19920401
  147. 0.2 um low-temperature Al etching using SiO2 mask, Digest of MicroProcess= (Japan Society of Applied Physics= Tokyo), pp. 144-145, 19920401
  148. A stacked capacitor with (BaxSr1-x)TiO3 for 256 MDRAM, Technical Digest of International Electron Devices Meeting =( IEEE= New York), pp. 823-826, 19910401
  149. Influence of halogen plasma atomosphere on SiO2 etching characteristics, Japanese Journal of Applied Physics, l.30巻, .11B号, pp. 3174-3177, 19910401
  150. Amorphous-deposited polycrystalline silicon for contact hole plugs, Applied Physics Letters, 58巻, pp. 610-612, 19910401
  151. After-corrosion suppression using low-temperature Al-Si-Cu Etching, Japanese Journal of Applied Physics, 30巻, 7号, pp. 1567-1570, 19910401
  152. Initial stage of thermal-oxidation reactions on Cl-adsorbed Si surfaces, Surface Science, 256巻, pp. 361-369, 19910401
  153. Chlorine/silicon surface reaction under heating, Surface Science, 250,巻, pp. 235-242, 19910401
  154. Influence of O2 and oxide on Cl/Si surface reactions, Surface Science, 247巻, pp. 21-31, 19910401
  155. Thermal reaction of WSix thin films with underlying Al films, Journal of Applied Physics, 70巻, 4号, pp. 2370-2375, 19910401
  156. Device application and growth mechanism for hemi-spherical grained Si, Material Research Society Symposium Proceedings= vol.219= ( Material Research Society= Pittsburgh= 1991), pp. 401-406, 19910401
  157. The dependence of residual chlorine amount on Al grain size, Proceedings of Symposium on Dry process ( Institute of Electrical Engineers of Japan= Tokyo= 1991), pp. .123-128, 19910401
  158. An advanced fabrication technology of hemispherical grained (HSG) poly-Si for high capacitance storage electrode, Extended Abstracts of Conference on Solid State Devices and Materials=(Japan Society of Applied Physics= Tokyo= 1991)=, pp. 478-480, 19910401
  159. Direct analysis for the contamination in contact and via holes after dry etching using thermal desorption spectroscopy, Extended Abstracts of Conference on Solid State Devices and Materials=(Japan Society of Applied Physics= Tokyo= 1992)=, pp. 562-564, 19910401
  160. Al-Ge reflow sputtering for submicron contact-hole filling, Proceedings of VLSI Multilevel Interconnection Conference, pp. 163-166, 19910401
  161. A quarter-micron interconnection technology using TiN/Al-Si-Cu/TiN/Al-Si-Cu/TiN/Ti alternated layers, Technical Digest of International Electron Devices Meeting =( IEEE= New York), pp. 281-284, 19910401
  162. Properties of a poly-Si/GaAs layered structure on Si for Si heterojunction bipolar transistor, Journal of Electronic Materials, .19巻, 8号, pp. 795-799, 19900401
  163. A capacitor-over-bit-line (COB) cell with a hemispherical grain storage node for 64Mb DRAMs, Technical Digest of International Electron Devices Meeting =( IEEE= New York), pp. 655-658, 19900401
  164. Initital oxidation reaction on Cl-adsorbed Si surfaces, Extended Abstracts of Conference on Solid State Devices and Materials=( Japan Society of Applied Physics= Tokyo), pp. 1111-1114, 19900401
  165. After-corrosion suppression using low-temperature Al-Si-Cu Etching, Proceedings of Symposium on Dry process ( Institute of Electrical Engineers of Japan= Tokyo= 1991), pp. 141-146, 19900401
  166. 0.25 um contact hole filling by Al-Ge reflow sputtering, Proceedings of the Symposium on VLSI Technology=, pp. 35-36, 19900401
  167. Poly-Si/GaAs layered structure on Si as a wide? bandgap emitter for Si heterojunction, Extended Abstracts of Conference on Solid State Devices and Materials=( Japan Society of Applied Physics= Tokyo), pp. 369-372, 19890401
  168. The hydrogen evolution in plasma-deposited silicon nitride/aluminum-alloy layered structures, Abstracts of Electronic Materials Conference (The Metallurgical Society= Pennsylvania= 1989)=, pp. E31, 19890401
  169. Comparison of refractory metal and silicide capping effect on aluminum metallizations, Proceedings of IEEE VLSI Multilevel Interconnection Conference= ( IEEE= New York), pp. 463-469, 19890401
  170. A new polyimide siloxane film for interlayer dielectrics in sub-micron multilevel interconnection, Proceedings of IEEE VLSI Multilevel Interconnection Conference= ( IEEE= New York), pp. 279-285, 19880401
  171. Hydrogen evolution in aluminum plasma deposited silicon nitride layered structures bipolar transistor, Applied Physics Letters, 50巻, 21号, pp. 1527-1529, 19870401
  172. Dielectric film blisters and aluminum film deformations in multilevel metallization, Abstracts of The Metallurgical Society Fall Meeting= ( The Metallurgical Society= Pennsylvania= 1986)., 19860401
  173. Hillock-free metallization using electron cyclotron resonance palsma CVD films’, Proceedings of the Symposium on Reduced Temperature, Proceedings of the Symposium on Reduced Temperature Processing for VLSI= ( The Electrochemical Society= New Jersey), pp. 235-246, 19860401
  174. Effects of Si3N4 and Al films on the passivation of poly-Si films, Abstracts? of the? Device Research Conference ( IEEE= New York)=, pp. VB-4., 19840401
  175. A new complementary transistor structure for analog integrated circuits, Technical digest of International Electron Devices Meeting, pp. .65-68., 19800401
  176. Effects of thin conductive film mask on ion implantation, Journal of the Electrochemical Society, 125巻, 11号, pp. 1830-1833, 19780401
  177. 多層配線技術とスケーリング, 電子情報通信学会論文誌D・I, pp. 105-117, 20000401
  178. ★, ULSIの微細化と多層配線技術への課題, 応用物理第68巻第11号, pp. 1215-1225, 19990401
  179. ULSI配線のための金属薄膜形成技術, 応用物理 第64巻第11号, pp. 1150-1151, 19950401
  180. 平坦化層間絶縁膜形成技術, 電気化学57, pp. 281, 19890401
  181. ウェハ保管環境のMOSデバイス特性への影響, エアロゾル研究, 17巻, 2号, pp. 96-104, 20020601
  182. High transmission gain integrated antenna on extremely high resistivity Si for ULSI wireless interconnect, IEEE Electron Devices Letters, 23巻, 12号, pp. 731-733, 20021201
  183. Characteristics of integrated antenna on Si for on-chip wireless interconnect, Japanese Journal of Applied Physics, 42巻, 4B号, pp. 2204-2209, 20030401
  184. Measurement of copper drift in methylsilsesquiazane-methylsilsesquioxane dielectric films, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 39巻, 4B号, pp. 2189-2193, 200004
  185. Multilayer interconnect technology for scaling, ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 84巻, 4号, pp. 26-40, 2001
  186. Direct patterning of photosensitive low-dielectric-constant films using electron-beam lithography, APPLIED PHYSICS LETTERS, 78巻, 17号, pp. 2557-2559, 20010423
  187. Energy band structure of Ru/(Ba,Sr)TiO3/Si capacitor deposited by inductively-coupled plasma-assisted radio-frequency-magnetron plasma sputtering, APPLIED PHYSICS LETTERS, 81巻, 15号, pp. 2821-2823, 20021007
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  189. High transmission gain integrated antenna on extremely high resistivity si for ULSI wireless interconnect, IEEE ELECTRON DEVICE LETTERS, 23巻, 12号, pp. 731-733, 122002
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  191. Dependences of Young's modulus of porous silica low dielectric constant films on skeletal structure and porosity, JOURNAL OF APPLIED PHYSICS, 100巻, 12号, 2006
  192. Study on the Interfacial Adhesion Property of Low-k Thin Film by the Surface Acoustic Waves with Cohesive Zone Model, Applied Surface Science, 2015
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著書等出版物

  1. 2000年12月, 次世代ULSI多層配線の新材料・プロセス技術 監修・吉川公麿 , 技術情報協会, 2000年, 12, 吉川 公麿
  2. 2000年02月, 「TiSi2プロセス」「次世代配線材料プロセス」、 次世代ULSIプロセス技術 廣瀬全孝編 , リアライズ社, 2000年, 02, 吉川 公麿
  3. 1999年12月, 「メタライゼーション」 半導体大辞典 監修・菅野卓雄 川西剛 , 工業調査会, 1999年, 12, 吉川 公麿
  4. 1998年07月, [ロジックデバイスへの適用」 半導体平坦化CMP技術 土肥俊郎他編 , 工業調査会, 1998年, 07, 吉川 公麿
  5. 1995年08月, 「サブハーフミクロン多層配線技術」19ーデバイスとプロセス その9、半導体研究41巻、西澤潤一編 , 工業調査会, 1995年, 08, 吉川 公麿
  6. 1984年01月, ’Improved Transistor Structure in Power Integrated Circuits’, Power Integrated Circuits? (edited by Paolo Antognetti) , McGraw-Hill Book Company, 1984年, 1, 吉川 公麿
  7. 2001年06月, シリコン熱酸化膜のホットエレクトロン耐性に及ぼす有機ガス汚染の影響 , 社団法人 電子情報通信学会, 2001年, 06, 調査報告書, 共著, 横山 新 芝原 健太郎 中島 安理 吉川 公麿 角南英夫 , 6
  8. 2004年, Silicide Technology for Integrated Circuits, Cobalt silicide technology, The Institute of Electrica and Engineers, 2004年, 1, 単行本(学術書), 共著, English, T. Kikkawa, K. Inoue, K. Imai, 0 6341 52 8, 279, 17

招待講演、口頭・ポスター発表等

  1. ULSIの微細化と多層配線技術への課題, 吉川 公麿, 応用物理学会学術講演会, 2000年09月, 招待, 日本語
  2. Current and future low- dielectrics for Cu interconnects, 吉川 公麿, International Electron Devices Meeting, 2000年12月, 招待, 日本語
  3. A photosensitive low-k interlauer dielectric film for ULIs, 吉川 公麿, International Conference on Solid-State and Integrated Circuit Technology, 2001年10月, 招待, 日本語
  4. ULSI多層配線技術の課題, 吉川 公麿, 電子情報通信学会技術研究報告, 2001年01月, 招待, 日本語
  5. Advanced Interconnect Technologies for ULSI Scaling, 吉川 公麿, International Conference on VLSI and CAD, 1999年10月, 招待, 日本語
  6. ULSI Scaling and Interconnect Technology, 吉川 公麿, Advanced Metallization Conference, 1999年10月, 招待, 日本語
  7. VLSI Interconnect Process Integration, 吉川 公麿, International Conference on Solid-State and Integrated Circuit Technology, 1998年10月, 招待, 日本語
  8. Recent progress of salicide technologies for subquarter micron CMOS, 吉川 公麿, Int Electron Devices & Materials Symp, 1996年12月, 招待, 日本語
  9. Recent developments in quarter-micronn interconnect technologies for 256-Mbit DRAMs, 吉川 公麿, Conference on Advanced Metallization for ULSI Applications, 1993年10月, 招待, 日本語
  10. 0.35 um Technologies in Japan, 吉川 公麿, Materials Research Society Fall Meeting, 1996年11月, 招待, 日本語
  11. Quartermicron interconnection technologies for 256 MDRAMs, 吉川 公麿, International Conference on Solid-State Devices and Materials, 1992年09月, 招待, 日本語
  12. Al-Si-Cu/TiN multilayer interconnection and Al-Ge reflow sputtering technologies for quarter-micron devices, 吉川 公麿, "SPIE-The International Society for Optical Engineering Fall Meeting,", 1992年09月, 招待, 日本語

受賞

  1. 2009年09月08日, 応用物理学会 フェロー表彰証, 社団法人応用物理学会会長, 半導体集積回路配線技術の研究開発が評価
  2. 2010年01月01日, 米国電気電子学会 フェロー表彰証, 米国電気電子学会, 半導体集積回路配線技術への貢献が評価
  3. 2008年08月, 応用物理学会 中国四国支部貢献賞, 応用物理学会中国四国支部支部長, 超先端半導体集積回路における多層配線技術の研究
  4. 2000年09月, 応用物理学会論文賞, 応用物理学会, ULSIの微細化と多層配線技術への課題
  5. 2004年10月, The Sevefnth International Conference on Solid-State and Integrated Circuit Technology Best Poster Paper Award, International Conference on -State and Integrated Circuit Te, Young's modulus characterization for the fragile low-k films by the improved surface accoustic wave technique

取得

  1. 特許権, 特許4742262, 2011年05月20日, 無線通信システム、送信装置、受信装置
  2. 特許権, 特許5224454, 2013年03月22日, 異常組織検出装置