坂上 弘之Hiroyuki Sakaue

Last Updated :2020/04/02

所属/職名
大学院先進理工系科学研究科/助教
メールアドレス
hsakauehiroshima-u.ac.jp
その他連絡先
東広島市鏡山1-3-1 先端物質科学研究科301A号室
TEL:082-424-7683

基本情報

主な職歴

  • 2001年04月01日, 広島大学, 大学院先端物質科学研究科, 助教
  • 1989年10月01日, 2001年03月31日, 広島大学, 工学部, 助手

学歴

  • 広島大学, 工学研究科, 材料工学, 日本, 1987年04月, 1989年03月
  • 広島大学, 工学部, 第二類(電気系), 日本, 1983年04月, 1987年03月

学位

  • 博士(工学)(広島大学)
  • 工学修士(広島大学)

研究分野

  • 工学 / 電気電子工学 / 電子・電気材料工学

研究キーワード

  • 表面反応
  • 自己組織化
  • 半導体表面
  • 湿式処理
  • 光発電デバイス
  • ダイヤモンド
  • 低誘電率
  • CVD
  • ポーラス
  • エッチング

所属学会

教育活動

授業担当

  1. 2020年, 教養教育, 1ターム, 教養ゼミ
  2. 2020年, 修士課程・博士課程前期, セメスター(前期), 応用量子科学コースセミナー
  3. 2020年, 修士課程・博士課程前期, セメスター(後期), 応用量子科学コースセミナー
  4. 2020年, 修士課程・博士課程前期, セメスター(前期), 電子工学セミナーA
  5. 2020年, 修士課程・博士課程前期, セメスター(後期), 電子工学セミナーB
  6. 2020年, 修士課程・博士課程前期, 年度, 電子工学プレゼンテーション演習
  7. 2020年, 修士課程・博士課程前期, 1ターム, 電子工学特別演習A
  8. 2020年, 修士課程・博士課程前期, 2ターム, 電子工学特別演習A
  9. 2020年, 修士課程・博士課程前期, 3ターム, 電子工学特別演習B
  10. 2020年, 修士課程・博士課程前期, 4ターム, 電子工学特別演習B
  11. 2020年, 修士課程・博士課程前期, 年度, 量子物質科学特別研究

研究活動

学術論文(★は代表的な論文)

  1. Quantitative analysis of adsorbed water on a germanium oxide surface, 13th European Vacuum Conference, 2014,9,8
  2. Influence of surface hydrophobicity on self-spreading of lipid bilayer, 11th International Conference on Nano-Molecular Electronics, 2014,12,17
  3. Density of immobilized quantum dots by a self-assembled monolayer, 11th International Conference on Nano-Molecular Electronics, 2014,12,17
  4. Disorder into 2D ordered PCBM structures brought by additional deposition of CuPc, 11th International Conference on Nano-Molecular Electronics, 2014,12,17
  5. Chemical Structural Analysis of Diamondlike Carbon Films with Different Electrical Resistivities by X-ray Photoelectron Spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS, 47巻, 5号, pp. 3376-3379, MAY 2008
  6. Annealing effect on the chemical structure of diamondlike carbon, JOURNAL OF APPLIED PHYSICS, 104巻, 4号, AUG 15 2008
  7. Direct fabrication of nanopores in a metal foil using focused ion beam with in situ measurements of the penetrating ion beam current, REVIEW OF SCIENTIFIC INSTRUMENTS, 80巻, 12号, DEC 2009
  8. Flipping Behavior of a Porphyrin Derivative Molecule on a Au(111) Reconstructed Surface, JOURNAL OF PHYSICAL CHEMISTRY C, 115巻, 25号, pp. 12414-12418, JUN 30 2011
  9. Flipping Behavior of a Porphyrin Derivative Molecule on a Au(111) Reconstructed Surface, JOURNAL OF PHYSICAL CHEMISTRY C, 115巻, 25号, pp. 12414-12418, JUN 30 2011
  10. Simple Method of Synthesizing Nickel-Nitrilotriacetic Acid Gold Nanoparticles with a Narrow Size Distribution for Protein Labeling, JAPANESE JOURNAL OF APPLIED PHYSICS, 50巻, 9号, SEP 2011
  11. Simple Method of Synthesizing Nickel-Nitrilotriacetic Acid Gold Nanoparticles with a Narrow Size Distribution for Protein Labeling, JAPANESE JOURNAL OF APPLIED PHYSICS, 50巻, 9号, SEP 2011
  12. Climbing Rates of Microtubules Propelled by Dynein after Collision with Microfabricated Walls, JAPANESE JOURNAL OF APPLIED PHYSICS, 51巻, 2号, FEB 2012
  13. Digital Chemical Vapor Deposition of SiO2 Using a Repetitive Reaction of Triethylsilane/Hydrogen and Oxidation, Jpn. J. Appl. Phys., 30巻, pp. L124-L127, 19910401
  14. SiプロセスとSi-H-FTIR-ATRによる表面反応過程の研究-, 表面科学, 13巻, pp. 358-364, 19920401
  15. Si Etching Employing Steady-State Magnetron Plasma with Magnet at Anode Centered in Cylindrical Reactor, Jpn. J. Appl. Phys., 31巻, 12B号, pp. 4338-4342, 19921201
  16. Aluminum-Selective Chemical Vapor Deposition Induced by Hydrogen Desorption on Silicon, Jpn. J. Appl. Phys., 35巻, 2B号, pp. 1010-1013, 19960201
  17. Excimer Laser Induced Pattern Projection Etching of Aluminum, Symp. on Dry Process, 19880401
  18. Digital Etching of Silicon, 1990 3rd Micro Process Conf., 19900401
  19. Study on Reaction Mechanism of Al Selective CVD with in-situ XPS Measurement, 1990 3rd Micro Process Conf., 19900401
  20. Conformable CVD of SiO_2_ into Deep Trench Using the Digral Method, 22nd (1990 International) Conf. on Solid State Devices and Materials, 19900401
  21. Conformal Chemical Vapor Deposition of Insulator Films Employig Digital Method, Symp. on Dry Process, 19900401
  22. In-situ X-ray Photoelectron Spectrocopy Observation on Reactive Etched Surface of Indium-Tin Oxide Film Employing Alcohol Gas, Symp. on Dry Process, 19910401
  23. Diagnostic of Hydrogen Role on Si Surface Reaction processes Employing in-situ FTIR-ATR, 1991 4th International Microprocess Conf., 19910701
  24. Excimer Laser Enhanced Reactive Ion Etching, Laser Advanced Materials Processing(LAMP’92), 19920401
  25. Si Etching Employing Steady-State Magnetron Plasma with Magnet at Anode Centered in Cylindrical Reactor, 5th International MicroProcess Conf., 19920401
  26. Digital CVD of Si Oxide/Nitride and Study on its Surface Reaction, Mat. Res. Soc. Fall Meeting, 19920401
  27. Spontaneous Etching of SiO_2_ Employing Downstream Plasma, 183rd Meeting of Electrochem. Soc., 19930401
  28. Reflective Absorption Spectroscopy of Reaction Process of Silicon Surface with Fluorine Radicals, 7th Intern. MicroProcess Conf., 19940701
  29. Low Energy Bias Sputtering Filling of SiO2 into High Aspect Ratio Trench Employing Axially Confined Helicon Wave Plasma, 1994 International Conf. on Solid State Devices and Materials, pp. 643-645, 19940801
  30. Study of Fluorination Process of H-terminated Si Surface by Xenon Fluoride Exposure, The 8th Intern. MicroProcess Conf., pp. 172-173, 19950701
  31. Al-Selective CVD Induced by Hydrogen Desorption on Si, 1995 International Conf. on Solid State Devices and Materials, pp. 926-928, 19950801
  32. 固体表面分析(II), 講談社, pp. 482-492, 19950401
  33. Highly Selective SiO2 Etching Using CF4/C2H4, Jpn. J. Appl. Phys., 36巻, 4B号, pp. 2477-2481, 19970401
  34. Scanning Tunneling Microscopy Observation on the Atomic structures of Step Edges and Etch Pits on NH4F-Treated Si(111) Surface, 1996 International Conf. on Solid State Devices and Materials, pp. 392-394, 19960801
  35. Highly Selective SiO2 Etching Using CF4/C2H4, Proc. of Symp. on Dry Process, pp. 141-146, 19961101
  36. Al Nano-Structure Formation using Selective Reactivity of Step/Terrace Structure of Hydrogen-terminated Si(111) Surface, 4th International Symp. on Atomically Controlled Surfaces and Interfaces, pp. 345, 19971001
  37. Self-Organization of Periodic Step/Terrace Structure on Hydrogen-Terminated Si Surface, JRCAT International Workshop on Science and Technology of Hydrogen-Terminated Silicon Surfaces, pp. 11-12, 19971101
  38. Wafer-Scale Self-Organization of Periodic Step/Terrace Structure on Hydrogen-Terminated Si Surface, 1998 International Conf.on Solid State Devices and Materials, pp. 434-435, 19980901
  39. Perfect Control of Hydrogen-Terminated Silicon Wafer Surface, Proc.of 9th International Conference on Production Engineering, pp. 871-876, 19990901
  40. Low Dielectric Constant Porous Diamond Film Composed of Diamond Nano-Particles, Abstracts of Advanced Metallization Conf. US Session(AMC2000), pp. 85-86, 20001001
  41. Low Dielectric Constant Porous Diamond Film Composed of Diamond Nano-Particles, Abstracts of Advanced Metallization Conf. Asian Session(ADMATA2000), pp. 175-176, 20001001
  42. Laser-Induced Pattern Projection Etching of Aluminum, Symp. on Dry Process (Tokyo= Nov. 1-2= 1990), pp. pp. 187 - 190, 19881001
  43. Digital Chemical Vapor Deposition and Etching Technologies for Semiconductor Processing, J. Vac. Sci. Technol. A, 8巻, pp. pp.1844-1850, 19900401
  44. Fabrication and Evaluation of Three-Dimensional Optically-Coupled Common Memory, 1994 International Conf. on Solid State Devices and Materials, pp. 965-966, 19940801
  45. GaAs/Si Optoelectronic Design and Development at Hiroshima University, Semiconductor Characterization, pp. 599-604, 19960401
  46. Fabrication and Evaluation of Three-Dimensional Optically-Coupled Common Memory, Jpn. J. Appl. Phys., 34巻, 2B号, pp. 1246-1248, 19950401
  47. GaAs/Si Optoelectronic Design and Development at Hiroshima Universit, Proc. Intern. Workshop of Semicon. Character.(Gaithersburg= USA), pp. 599-604, 19950401
  48. Fabrication and Evaluation of Three-Dimensional Optically-Coupled Common Memory, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp. 965-966, 19940401
  49. Digital Chemical Vapor Deposition and Etching Technologies for Semiconductor Processing, J. Vac. Sci. Technol. A, 8巻, 3号, pp. 1844-1850, 19900301
  50. Study on Reaction Mechanism of Aluminum Selective Chemical Vapor Deposition With In-situ Xps Measurement, Jpn. J. Appl. Phys., 29巻, 11号, pp. 2657-2661, 19901101
  51. Atomic Layer Controlled Digital Etching of Silicon, Jpn. J. Appl. Phys., 29巻, 11号, pp. 2648-2652, 19901101
  52. Digital Chemical Vapor Deposition of SiO_2_, Appl. Phys. Lett=, 57巻, 11号, pp. 1096-1098, 19901101
  53. Filling of Si Oxide into a Deep Trench Using Digital CVD Method., Appl. Surf. Sci., 46巻, pp. 168-174, 19900701
  54. Low Energy Silicon Etching Technologies, Microelectronic Engineering, 13巻, 1-4号, pp. 417-424, 19910301
  55. Diagnostics of Hydrogen Role in The Si Surface Reaction Processes Employing In-situ Fourier Transform Infrared Attenuated Total Reflection, Jpn. J. Appl. Phys., 30巻, 11B号, pp. 3215-3218, 19911101
  56. In-situ X-Ray Photoelectron Spectroscopy of Reactive-Ion-Etched Surfaces of Indium-Tin Oxide Film Employing Alcohol Gas, Jpn. J. Appl. Phys., 31巻, 6B号, pp. 2006-2010, 19920601
  57. Digital Etching Study and Fabrication of Fine Si Lines and Dots, Thin Solid Films, 225巻, 1/2号, pp. 124-129, 19930101
  58. Recent Development of High Aspect Ratio Processes in ULSI Devices, J. Korean Phys. Soc., 26巻, pp. S75-S81, 19930401
  59. Digital Chemical Vapor Deposition of Silicon Oxide/Nitride and Its Surface Reaction Study, Mat. Res. Soc. Symp. Proc.=, 284巻, pp. 169-180, 19930401
  60. Al Etching Characteristics Employing Helicon Wave Plasma, Jpn. J. Appl. Phys., 32巻, 6B号, pp. 3019-3022, 19930601
  61. Photoexited Anisotropic Etching of Single-Crystalline Silicon, Jpn. J. Appl. Phys., 32巻, 7B号, pp. L1024-L1026, 19930701
  62. Electromigration Characteristics of Cu and Al Interconnections, Mater Reliab. Microelectron, 4巻, pp. 441-451, 19940401
  63. High Intensity Hydogen Lamp Employing Helicon Wave Plasma and Its Application to Si and SiO2 Etching, Appl. Surf. Sci., 79/80巻, pp. 495-501, 19941201
  64. Electromigration Characteristics of Cu-Al Precipitate In AlCu Interconnection, Jpn. J. Appl. Phys., 33巻, 7A号, pp. 3860-3863, 19940701
  65. Resistance Oscillations Induced by Direct Current Electromigration, Jpn. J. Appl. Phys., 34巻, 2B号, pp. 1030-1036, 19950201
  66. Fabrication and Evaluation of Three Dimensional Optically Coupled Common Memory, Jpn. J. Appl. Phys., 34巻, 2B号, pp. 1246-1248, 19950201
  67. Fabrication of a Si Nanometer Column PN Junction and Implanted Defect Evaluation by Transmission Electron Microscopy, Jpn. J. Appl. Phys., 35巻, 2B号, pp. 1045-1048, 19960201
  68. Ordered Two-Dimensional Nanowire Array Formation Using Self-Organized Nanoholes of Anodically Oxidized Aluminum, Jpn. J. Appl. Phys., 36巻, 12B号, pp. 7791-7795, 19971201
  69. Scanning Tunneling Microscopy Observation on The Atomic Structures of Step Edges and Etch Pits on a NH4F-Treated Si(111) Surface, Jpn. J. Appl. Phys., 36巻, 3B号, pp. 1420-1423, 19970301
  70. Self-Organization of a Two-Dimensional Array of Gold Nanodots Encapsulated by Alkanethiol, Jpn. J. Appl. Phys., 37巻, 12B号, pp. 7198-7201, 19981201
  71. Self-Organized Gold Nanodots Array On A Silicon Substrate And Its Mechanical Stability, Jpn. J. Appl. Phys., 38巻, 12A号, pp. L1488-L1490, 19991201
  72. Control of Interdot Space and Dot Size in a Two-Dimensional Gold Nanodot Array, Jpn. J. Appl. Phys., 38巻, 4B号, pp. L473-L476, 19990401
  73. Correlation Between Agglomeration of a Thin Film and Reflow Filling in a Contact Hole for Sputtered Al Films, J. Vac. Sci. Technol. B, 17巻, 6号, pp. 2553-2558, 19990601
  74. Two-Dimensional Nanoware Array Formation On Si Substrate Using Self-Organized Nanoholes of Anodically Oxidized Aluminum, Solid State Electron, 43巻, 6号, pp. 1143-1146, 19990601
  75. Electrical Properties of Self-Organized Nanostructures of Alkanethiol-Encapsulated Gold Particles, J. Vac. Sci. Technol. B, 18巻, 6号, pp. 2653-2657, 20000601
  76. Well Size Controlled Colloidal Gold Nanoparticles Dispersed in Organic Solvents, Jpn. J. Appl. Phys., 40巻, 1号, pp. 346-349, 20010101
  77. Formation of A Large Scale Langmuir-Blodgett Monolayer of Alkanethiol-Encapsulated Gold Particles, J. Vac. Sci. Technol. B, 19巻, 1号, pp. 115-120, 20010101
  78. ★, Atomic-Scale Defect Control on Hydrogen-Terminated Silicon Surface at Wafer Scale, Appl. Phys. Lett., 78巻, 3号, pp. 309-311, 20010101
  79. Low Dielectric Constant Porous Diamond Film Composed of Diamond Nano-Particles, Mat. Res. Soc. Symp. Proc., ULSI-XVI巻, pp. 647-652, 20011001
  80. Effect of Pd Catalyst Adsorption on Cu Filling Characteristics in Electroless Plating, Mat. Res. Soc. Symp. Proc., ULSI-XVI巻, pp. 229-234, 20011101
  81. TEM Observation of the Damages in Heavily Ion-implanted Fine Si Columns, Mat. Res. Soc. Symp. Proc., 354巻, pp. 641-646., 19950401
  82. GaAs/Si Optoelectronic Design and Development at Hiroshima University, International Workshop: Semiconductor Characterization, pp. 1-5, 19950401
  83. Adsorbed Water on a Silicon Wafer Surface Exposed to Atmosphere, Jpn. J. Appl. Phys., 40巻, 11号, pp. 6198-6201., 20011101
  84. Electroless Plating of Cu Initiated by Displacement Reaction on Metal-Nitride Diffusion Barriers, Electrochem. Solid-State Letters, 6巻, 3号, pp. C38-C41, 20030301
  85. Evaluation of Temperature Rise Due to Joule Heating and Preliminary Investigation of I’ts Effect on Electromigration Reliability, American Institute of Physics Proceedings, 612巻, pp. 94-104, 20020401
  86. Direct Electroless Plating of Copper on Barrier Metals, Proc. of the 2002 Internaional Interconnect Conference, pp. 176-178, 20020501
  87. Direct Electroless Copper Plating on Barrier Metals without Pd Catalyst, Mat. Res. Soc. Symp. Proc., ULSI-XVII巻, pp. 185-190, 20020401
  88. Improved Mechanical Strength of Porous Diamond Film by Silane coupler, Mat. Res. Soc. Symp. Proc., ULSI-XVII巻, pp. 313-318, 20020401
  89. DIRECT ELECTROLESS PLATING OF COPPER ON METAL NITRIDE DIFFUSION BARRIERS, The 19th VLSI Multilevel Interconnect Conference, pp. 147-155, 20021101
  90. Fabrication of two- and three-dimensional structures of nanoparticles using LB method and DNA hybridization, Mat. Res. Soc. Symp. Proc., 704巻, pp. 47-52, 20020401
  91. Experimental Condition for a Highly Ordered Monolayer of Gold Nanoparticles Fabrication by the Lagumuir-Blodgett Method, J. Vac. Sci. Technol. B, 19巻, 6号, pp. 2045-2049, 20010601
  92. Scanning Electron Microscope Observation of Heterogeneous Three-Dimensional Nanoparticle Array Using DNA, Jpn. J. Appl. Phys., 40巻, 5B号, pp. L521-L523, 20010501
  93. Computer-Aided Chemistry Estimation Method of Electronic-polarization Dielectric Constant for the Molecular Design of Low-k Materials, Jpn. J. Appl. Phys., 42巻, 1号, pp. 157-161, 20030101
  94. Improved Mechanical Strength of Porous Diamond Film by Silane Coupler, Abstracts of Advanced Metallization Conf. Asian Session (ADMATA2001), pp. 196-197, 20011001
  95. Low dielectric constant porous diamond films formed by diamond nanoparticles, Appl. Phys. Lett., 83巻, 11号, pp. 2226-2228, 20030901
  96. Improved Mechanical Strength of Porous Diamond Film by Silane Coupler, Abstracts of Advanced Metallization Conf.(AMC2001), pp. 196-197, 20011001
  97. Highly Adhesive Electroless Cu Layer Formation Using an Ultra Thin Ionized Cluster Beam (ICB)-Pd Catalytic Layer for Sub-100nm Cu Interconnections, Jpn. J. Appl. Phys., 42巻, 10B号, pp. L1223-L1225, 20031001
  98. Suppression of native oxide growth in sputtered TaN films and its application to Cu electroless plating, J. Appl. Phys., 94巻, 7号, pp. 4697-4701, 20030701
  99. Influence of Surface Oxide of Sputtered TaN on Displacement Plating of Cu, Jpn. J. Appl. Phys., 42巻, 4B号, pp. 1843-1846, 20030401
  100. Off- and On-Time Dependences of Electromigration MTF in Pulsed DC Stressing Tests, Mat. Res. Soc. Symp. Proc., ULSI-XVIII巻, pp. 279-284, 20030401
  101. Formation of Al Dot Hexagonal Array on Si Using Anodic Oxidation and Selective Etching, Jpn. J. Appl. Phys., 41巻, 3B号, pp. L340-L343, 20020301
  102. Formation of Al Nanodot Array by the Combination of Nano-Indentation and Anodic Oxidation, Mat. Res. Soc. Symp. Proc., 705巻, pp. 133-138, 20020401
  103. Fabrication of nanohole array on Si using self-organized porous alumina mask, J. Vac. Sci. Technol. B, 19巻, 5号, pp. 1901-1904, 20010501
  104. Study of a Dielectric Constant Due to Electronic Polarization Using a Semiemprical Molecular Orbital Method I, Jpn. J. Appl. Phys., 40巻, 8号, pp. 4829-4836, 20010801
  105. Wet Treatment for Preparing Atomically Smooth Si(100) Wafer Surface, Abstracts of 9th Int. Conf. on Formation of Semiconductor Interfaces (ICFSI-9), pp. 46, 20030901
  106. Preparation of Atomic-Scale Level Smooth Si(100) Surface using Wet Treatment, Abstracts of 7th Int. Conf. on Atomically Controlled Surfaces Interfaces and Nanostructures (ACSIN-7), pp. 228, 20031101
  107. Bottom-up Fill of Copper in High Aspect Ratio Via Holes by Electroless Plating, Technical Digest of IEEE IEDM, pp. 147-150, 20031201
  108. Electroless Copper Seed Activated by 1nm ICB-Pd Catalytic Layer for Fine Cu Interconnections, Proc. of Int. Conf. On Solid State Devices and Materials 2003, pp. 456-457, 20030901
  109. Fabrication of Ultra High Density Ferromagnetic Column Arrays by Porous Alumina Template for Magnetic Recording Media, Microprocess and Nanostructure Conf. 2003, pp. 62-63, 20031001
  110. Formation of 10 nm Continuous Cu Film in a Fine Hole by Electroless Plating for Seed Layer Application, Mat. Res. Soc. Symp. Proc., ULSI-XIX巻, pp. 567, 20040301
  111. Wet preparation of defect-free hydrogen-terminated silicon wafer surface and its characterization in atomic-scale, Solid State Phenomena, 76-77巻, pp. 105-110, 20010401
  112. Electromigration Reliability Study of a GMR Spin Valve Devices, Mat. Res. Soc. Symp. Proc., 563巻, pp. 145-150, 19990401
  113. 自己組織化ポーラスアルミナ・ナノホール配列に埋め込み形成した強磁性体ナノ構造体の結晶構造解析, 文部科学省 ナノテクノロジー総合支援プロジェクト Spring-8研究成果報告書, 3巻, pp. 42-44, 20040601
  114. Aspect Ratio Dependence of Magnetic Hysteresis Property of High Density Co Wire Array Buried In Porous Alumina Template, J. Magnetics and Magnetic Materials, 272-276巻, pp. 1598-1599, 20040601
  115. Bottom-up fill of Cu in deep submicron holes by electroless plating, Electrochem. Solid-State Letters, 7巻, pp. C78-C80, 20040601
  116. Bottom-up fill for submicrometer copper via holes of ULSIs by electroless plating, J. Electrochem. Soc., 151巻, 12号, pp. C781-C785, 20041201
  117. Effect of additives on hole filling characteristics of electroless copper plating, Jpn. J. Appl. Phys., 43巻, 10号, pp. 7000-7001, 20041001
  118. Thickness dependences of nucleation and annihilation fields of magnetic vortices in submicron supermalloy dots, Jpn. J. Appl. Phys., 42巻, 8号, pp. 5038-5039, 20030801
  119. Self-organization of a porous alumina nanohole array using a sulfuric/oxalic acid mixture as electrolyte, Electrochem. Solid-State Letters, 7巻, 3号, pp. E15-E17, 20040301
  120. Wet treatment for preparing atomically smooth Si(100) wafer surface, Appl. Surf. Sci., 234巻, pp. 439-444, 20040601
  121. Nano-patterning of Organic Molecules on H-terminated Si Surface by AFM, 8th International Conf. on Atomically Controlled Surfaces, Interfaces and Nanostructures, pp. 114, 20050601
  122. Nanometer-Scale Control of Film Thickness and Pattern Width of Alkyl SAM on H-Terminated Si(111) Surface, International Symp. on Surface Science and Nanotechnology, pp. 536, 20051101
  123. Epitaxial Growth of Cu Nanodot Arrays Using an AAO Template on a Si Substrate, Electrochem. Solid-State Letters, 9巻, 4号, pp. J13-J16, 20060401
  124. Surface Cleaning of PET Films with an Atmospheric Pressure Dielectric Barrier Discharge, Abstracts of 8th Asia-Pacific Conference on Plasma Science and Technology, pp. 197, 20060701
  125. Experimental Study of Temperatures of Atmospheric-Pressure Nonequilibrium Ar/N2 Plasma Jets and Poly (ethyleneterephtalate)-Surface Processing, Jpn. J. Appl. Phys., 46巻, 2号, pp. 795-798, 20070201
  126. Fabrication of the Ordered Dangling Bond Rows on Hydrogen Terminated Si(111) Surface with Periodic Step/Terrace Structure, Abstracts of 13th International Conf. on Solid Films and Surfaces, pp. 240 (PIII-55), 20061101
  127. Electrical Characteristics of Low Dielectric Porous Diamond Film Composed by Diamond Nano-particles, Abstracts of 13th International Conf. on Solid Films and Surfaces, pp. 47 (PI-02), 20061101
  128. Large Negative Resistance Property Observed in 3-D Network of DNA and Gold Nanoparticle Formed by DNA Mediated Self-organization, 2004 International Conf. on Solid State Devices and Materials, pp. 114-115, 20040801
  129. Immobilization of Gold Nanoparticles on Silanized Substrate for Sensors Based on Localized Surface Plasmon Resonance, e-J. Surf. Sci. Nanotech., 5巻, pp. 1-6, 20070101
  130. New method to calibrate binding energy using Au nanocolloids in X-ray photoelectron analysis of diamondlike carbon films with different electrical resistivities, Appl. Surf. Sci., 254巻, pp. 2666-2670, 20071101
  131. X線光電子分光法を用いたダイヤモンドライクカーボンの化学構造解析, 炭素, pp. 280-289, 20081001
  132. X-ray Photoelectron Analysis of Diamondlike Carbon (DLC) Films with Different Electric Resistivities, The 9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-9), 20071111
  133. PHOTOELECTERON SPECTROSCOPIC ANALYSIS OF CHEMICAL STRUCTURE OF DIAMONDLIKE CARBON WITH DIFFERENT ELECTRICAL RESISTIVITIES, 2008 International Conference on Carbon (CARBON'08), 20080701
  134. Activation energy of flipping behavior of porphyrin derivative molecule on Au(111), Abs. 5th International Meeting on Molecular Electronics, pp. 326, 20101201
  135. Controlled motion of dynein-microtubule system by patterned resist polymer, Abs. 9th International Conference on Nano-Molecular Electronics, pp. 83, 20101201
  136. Flipping behavior of porphyrin derivative molecule on Au (111), Abs. 9th International Conference on Nano-Molecular Electronics, pp. 148, 20101201
  137. Chemical Structures of Ge (111) Surface Treated by Hydrogen Halide Aqueous Solutions, The 15th International Conf. on Solid Films and Surfaces (ICSFS-15, Beijing), pp. -, 20101001
  138. Controlled motion of dynein-microtubule system by patternd resist polymer, Abs. 9th International Conference on Nano-Molecular Electronics, pp. 83, 20101201
  139. Flipping behavior of porphyrin derivative molecule on Au (111), Abs. 9th International Conference on Nano-Molecular Electronics, pp. 148, 20101201
  140. Fabrication of dimer of silver nanoparticles for surface enhanced raman scattering, Colloids and Materials 2011, -巻, -号, pp. P3.95, 20110501
  141. Electrical properties of self-organized nanostructures of alkanethiol-encapsulated gold particles, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 18巻, 6号, pp. 2653-2657, NOV-DEC 2000
  142. Atomic-scale defect control on hydrogen-terminated silicon surface at wafer scale, APPLIED PHYSICS LETTERS, 78巻, 3号, pp. 309-311, JAN 15 2001
  143. Formation of a large-scale Langmuir-Blodgett monolayer of alkanethiol-encapsulated gold particles, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 19巻, 1号, pp. 115-120, JAN-FEB 2001
  144. Well-size-controlled colloidal gold nanoparticles dispersed in organic solvents, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40巻, 1号, pp. 346-349, JAN 2001
  145. Wet preparation of defect-free hydrogen-terminated silicon wafer surface and its characterization in atomic-scale, ULTRA CLEAN PROCESSING OF SILICON SURFACES 2000, 76-77巻, pp. 105-110, 2001
  146. Study of a dielectric constant due to electronic polarization using a semiempirical molecular orbital method I, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40巻, 8号, pp. 4829-4836, AUG 2001
  147. Scanning electron microscope observation of heterogeneous three-dimensional nanoparticle arrays using DNA, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40巻, 5B号, pp. L521-L523, MAY 15 2001
  148. Fabrication of nanohole array on Si using self-organized porous alumina mask, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 19巻, 5号, pp. 1901-1904, SEP-OCT 2001
  149. Adsorbed water on a silicon wafer surface exposed to atmosphere, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 40巻, 11号, pp. 6198-6201, NOV 2001
  150. Experimental conditions for a highly ordered monolayer of gold nanoparticles fabricated by the Langmuir-Blodgett method, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 19巻, 6号, pp. 2045-2049, NOV-DEC 2001
  151. Formation of Al dot hexagonal array on Si using anodic oxidation and selective etching, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 41巻, 3B号, pp. L340-L343, MAR 15 2002
  152. Optical spectroscopic studies of the dispersibility of gold nanoparticle solutions, JOURNAL OF APPLIED PHYSICS, 92巻, 12号, pp. 7486-7490, DEC 15 2002
  153. Electroless plating of copper on metal-nitride diffusion barriers initiated by displacement plating, ELECTROCHEMICAL AND SOLID STATE LETTERS, 6巻, 3号, pp. C38-C41, MAR 2003
  154. Computer-aided chemistry estimation method of electronic-polarization dielectric constants for the molecular design of low-k materials, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42巻, 1号, pp. 157-161, JAN 2003
  155. Influence of surface oxide of sputtered TaN on displacement plating of Cu, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42巻, 4B号, pp. 1843-1846, APR 2003
  156. Suppression of native oxide growth in sputtered TaN films and its application to Cu electroless plating, JOURNAL OF APPLIED PHYSICS, 94巻, 7号, pp. 4697-4701, OCT 1 2003
  157. Thickness dependences of nucleation and annihilation fields of magnetic vortices in submicron supermalloy dots, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42巻, 8号, pp. 5038-5039, AUG 2003
  158. Self-organization of a porous alumina nanohole array using a sulfuric/oxalic acid mixture as electrolyte, ELECTROCHEMICAL AND SOLID STATE LETTERS, 7巻, 3号, pp. E15-E17, 2004
  159. Low dielectric constant porous diamond films formed by diamond nanoparticles, APPLIED PHYSICS LETTERS, 83巻, 11号, pp. 2226-2228, SEP 15 2003
  160. Highly adhesive electroless Cu layer formation using an ultra thin ionized cluster beam (ICB)-Pd catalytic layer for sub-100 nm Cu interconnections, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 42巻, 10B号, pp. L1223-L1225, OCT 15 2003
  161. Effects of the surface pressure on the formation of Langmuir-Blodgett monolayer of nanoparticles, LANGMUIR, 20巻, 6号, pp. 2274-2276, MAR 16 2004
  162. Bottom-up fill of copper in deep submicrometer holes by electroless plating, ELECTROCHEMICAL AND SOLID STATE LETTERS, 7巻, 6号, pp. C78-C80, 2004
  163. Aspect ratio dependence of hysteresis property of high density Co wire array buried in porous alumina template, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 272巻, pp. 1598-1599, MAY 2004
  164. Wet treatment for preparing atomically smooth Si(100) wafer surface, APPLIED SURFACE SCIENCE, 234巻, 1-4号, pp. 439-444, JUL 15 2004
  165. Effect of additives on hole filling characteristics of electroless copper plating, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43巻, 10号, pp. 7000-7001, OCT 2004
  166. Bottom-up fill for submicrometer copper via holes of ULSIs by electroless plating, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 151巻, 12号, pp. C781-C785, 2004
  167. Contact resistance reduction using vacuum loadlock system and plasma dry cleaning, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44巻, 6A号, pp. 3860-3863, JUN 2005
  168. Characterization of electroless-plated Cu film over Pd catalytic layer formed by an ionized cluster beam, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 152巻, 10号, pp. C684-C687, 2005
  169. Fabrication of carbon nanotube and nanorod arrays using nanoporous templates, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44巻, 7A号, pp. 5289-5291, JUL 2005
  170. Epitaxial growth of Cu nanodot arrays using an AAO template on a Si substrate, ELECTROCHEMICAL AND SOLID STATE LETTERS, 9巻, 4号, pp. J13-J16, 2006
  171. Bottom-up copper fill with addition of mercapto alkyl carboxylic acid in electroless plating, ELECTROCHIMICA ACTA, 51巻, 12号, pp. 2442-2446, FEB 25 2006
  172. Experimental study of temperatures of atmospheric-pressure nonequilibrium Ar/N-2 plasma jets and poly(ethylene terephtalate)-surface processing, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46巻, 2号, pp. 795-798, FEB 2007
  173. New method to calibrate binding energy using Au nanocolloids in X-ray photoelectron analysis of diamondlike carbon films with different electrical resistivities, APPLIED SURFACE SCIENCE, 254巻, 9号, pp. 2666-2670, FEB 28 2008
  174. Surface Analysis of Carbon-Hydrogen Bonds in Diamondlike Carbon Films by X-ray Photoelectron Spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS, 48巻, 9号, SEP 2009
  175. X-ray photoelectron analysis of surface functional groups on diamond-like carbon films by gas-phase chemical derivatization method, SURFACE AND INTERFACE ANALYSIS, 42巻, 2号, pp. 77-87, FEB 2010
  176. Study of Adsorption Behavior of Disulfide on the Surface of Au Nanoparticle by X-ray Photoelectron Spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS, 52巻, 8号, AUG 2013
  177. Atomic Layer Controlled Digital Etching of Silicon, Japanese Journal of Applied Physics, 29巻, 11号, pp. 2648-2652, 1990
  178. Self-Spreading of Lipid Bilayer on a Hydrophobic Surface Made by Self-Assembled Monolayer with Short Alkyl Chain, Journal of Nanoscience and Nanotechnology, 16巻, 4号, pp. 3426-3430, 2016,4,13
  179. Intermixing behaviors of PCBM with CuPc on Au(111) surface, Chemical Physics Letters, 661巻, pp. 215-218, 2016,9,6
  180. Intermixing behaviors of PCBM with CuPc on Au(111) surface, CHEMICAL PHYSICS LETTERS, 661巻, pp. 215-218, SEP 16 2016
  181. Self-Spreading of Lipid Bilayer on a Hydrophobic Surface Made by Self-Assembled Monolayer with Short Alkyl Chain, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 16巻, 4号, pp. 3426-3430, APR 2016
  182. Fabrication of the sulfur-terminated Ge(111) surface, 15th International Conf. on the Formation of Semiconductor Interfaces, 2015.11.15
  183. Estimation of the Number of Quantum Dots Immobilized on an Ultra-flat Au Surface, NANOSCALE RESEARCH LETTERS, 12巻, APR 26 2017