中島 安理Anri Nakajima

Last Updated :2024/11/05

所属・職名
半導体産業技術研究所　准教授
メールアドレス
anakajimahiroshima-u.ac.jp

基本情報

学位

  • 理学博士　(東北大学)
  • 理学修士　(東北大学)

研究分野

  • 総合理工 / 応用物理学 / 応用物性

研究キーワード

  • 単一電子デバイス
  • ゲート絶縁膜
  • 原子層成長

教育活動

授業担当

  1. 2024年, 学部専門, ３ターム, 半導体プロセス工学
  2. 2024年, 学部専門, 通年, 卒業論文
  3. 2024年, 修士課程・博士課程前期, セメスター（前期）, 電子工学セミナーA
  4. 2024年, 修士課程・博士課程前期, セメスター（後期）, 電子工学セミナーB
  5. 2024年, 修士課程・博士課程前期, 年度, 電子工学プレゼンテーション演習
  6. 2024年, 修士課程・博士課程前期, １ターム, 電子工学特別演習A
  7. 2024年, 修士課程・博士課程前期, ２ターム, 電子工学特別演習A
  8. 2024年, 修士課程・博士課程前期, ３ターム, 電子工学特別演習B
  9. 2024年, 修士課程・博士課程前期, ４ターム, 電子工学特別演習B
  10. 2024年, 修士課程・博士課程前期, ２ターム, 分子・バイオデバイス工学
  11. 2024年, 修士課程・博士課程前期, 年度, 量子物質科学特別研究
  12. 2024年, 博士課程・博士課程後期, 年度, 量子物質科学特別研究

研究活動

学術論文（★は代表的な論文）

  1. Growth and electrical properties of atomic-layer deposited ZrO2/Si-nitride stack gate dielectrics, JOURNAL OF APPLIED PHYSICS, 95巻, 2号, pp. 536-542, 20040115
    DOIを用いた論文検索結果へのリンク
  2. Application of highly-doped Si single-electron transistors to an exclusive-NOR operation, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 43巻, 3B号, pp. L418-L420, 20040315
    DOIを用いた論文検索結果へのリンク
  3. Interface trap generation induced by charge pumping current under dynamic oxide field stresses, IEEE ELECTRON DEVICE LETTERS, 26巻, 3号, pp. 216-218, 200503
    DOIを用いた論文検索結果へのリンク
  4. Abnormal enhancement of interface trap generation under dynamic oxide field stress at MHz region, APPLIED PHYSICS LETTERS, 86巻, 8号, 20050221
    DOIを用いた論文検索結果へのリンク
  5. Modified direct-current current-voltage method for interface trap density extraction in metal-oxide-semiconductor field-effect-transistor with tunneling gate dielectrics at high temperature, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 44巻, 1-7号, pp. L60-L62, 2005
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  6. Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor, APPLIED PHYSICS LETTERS, 86巻, 12号, 20050321
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  7. Enhancement of BTI degradation in pMOSFETs under high-frequency bipolar gate bias, IEEE ELECTRON DEVICE LETTERS, 26巻, 6号, pp. 387-389, 200506
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  8. Atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics for future high-speed DRAM with enhanced reliability, IEEE ELECTRON DEVICE LETTERS, 26巻, 8号, pp. 538-540, 200508
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  9. Annealing temperature dependence on nickel-germanium solid-state reaction, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 44巻, 24-27号, pp. L753-L755, 2005
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  10. Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics, JOURNAL OF APPLIED PHYSICS, 98巻, 11号, 20051201
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  11. Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands, JOURNAL OF APPLIED PHYSICS, 98巻, 12号, 20051215
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  12. Influence of bulk bias on negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin SiON gate dielectrics, JOURNAL OF APPLIED PHYSICS, 99巻, 6号, 20060315
    DOIを用いた論文検索結果へのリンク
  13. Carrier mobility in metal-oxide-semiconductor field effect transistor with atomic-layer-deposited Si-nitride gate dielectrics, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 44巻, 28-32号, pp. L903-L905, 2005
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  14. Pulse waveform dependence on AC bias temperature instability in pMOSFETs, IEEE ELECTRON DEVICE LETTERS, 26巻, 9号, pp. 658-660, 200509
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  15. Mechanism of dynamic bias temperature instability in p- and nMOSFETs: The effect of pulse waveform, IEEE TRANSACTIONS ON ELECTRON DEVICES, 53巻, 8号, pp. 1805-1814, 200608
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  16. Electron detrapping characteristics in positive bias temperature stressed n-channel metal-oxide-semiconductor field-effect transistors with ultrathin HfSiON gate dielectrics, APPLIED PHYSICS LETTERS, 91巻, 3号, 20070716
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  17. Atomic layer deposition of HfO2 using Hf[N(C2H5)(2)](4) and H2O, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45巻, 9A号, pp. 7091-7093, 200609
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  18. Cotunneling current in Si single-electron transistor based on multiple islands, APPLIED PHYSICS LETTERS, 89巻, 18号, 20061030
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  19. Improvement in mobility and negative-bias temperature instability in metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Si-nitride/SiO2 stack dielectrics, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46巻, 4B号, pp. 1874-1878, 200704
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  20. Ar annealing for suppression of gate oxide thinning at shallow trench isolation edge, IEEE ELECTRON DEVICE LETTERS, 28巻, 7号, pp. 562-564, 200707
    DOIを用いた論文検索結果へのリンク
  21. Electrical characteristics of Si single-electron transistor based on multiple islands, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46巻, 9B号, pp. 6233-6236, 200709
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  22. Atomic layer deposition of HfO2 and Si nitride on Ge substrates, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46巻, 12号, pp. 7699-7701, 200712
    DOIを用いた論文検索結果へのリンク
  23. Bias temperature instability in metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Si-nitride/SiO(2) stack gate dielectrics, JOURNAL OF APPLIED PHYSICS, 103巻, 8号, 20080415
    DOIを用いた論文検索結果へのリンク
  24. Silicon single-electron memory having in-plane dot with double gates, JAPANESE JOURNAL OF APPLIED PHYSICS, 47巻, 6号, pp. 4985-4987, 200806
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  25. Dependence of charge storage and programming characteristics on dot number of floating dot memory, APPLIED PHYSICS LETTERS, 92巻, 22号, 20080602
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  26. ★, Impact of floating dot distribution on memory characteristics of self-aligned dots-on-nanowire memory, JOURNAL OF APPLIED PHYSICS, 105巻, 11号, 20090601
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  27. Conduction Path Fluctuation in Silicon Two-Dimensional Tunnel Junction Array, JAPANESE JOURNAL OF APPLIED PHYSICS, 48巻, 6号, 200906
    DOIを用いた論文検索結果へのリンク
  28. Fabrication of Si Nanowire Field-Effect Transistor for Highly Sensitive, Label-Free Biosensing, JAPANESE JOURNAL OF APPLIED PHYSICS, 48巻, 6号, 200906
    DOIを用いた論文検索結果へのリンク
  29. Monte Carlo Simulation of the Two-Dimensional Site Percolation Problem for Designing Sensitive and Quantitatively Analyzable Field-Effect Transistors, JAPANESE JOURNAL OF APPLIED PHYSICS, 48巻, 10号, 200910
    DOIを用いた論文検索結果へのリンク
  30. Effect of an Ultrathin SiN Cap Layer on the Bias Temperature Instability in Metal-Oxide-Semiconductor Field-Effect Transistors with HfSiON Gate Stacks, JAPANESE JOURNAL OF APPLIED PHYSICS, 49巻, 12号, 2010
    DOIを用いた論文検索結果へのリンク
  31. Functional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation, APPLIED PHYSICS LETTERS, 98巻, 5号, 20110131
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  32. Highly sensitive ion detection using Si single-electron transistors, APPLIED PHYSICS LETTERS, 98巻, 12号, 20110321
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  33. Influence of Organic Contaminantion on Reliability and Trap Generation in MOS Devices, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp. 176-177, 20010401
  34. Fabrication Technologies for Double-SiO2-Barrier MOS Transistor with a Poly-Si Dot, Jpn. J. Appl. Phys., 40巻, 3B号, pp. 2017-2020, 20010301
  35. Low-Temperature Selective Deposition of Silicon by Time-Modulation Exposure of Disilane and Formation of Silicon Nanowires, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp. 202-203, 20000401
  36. Self-Limiting Atomic-Layer Selective Deposition of Silicon Nitride by Temperature-Controlled Method, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, pp. 22-23, 19980401
  37. ★, Si quantum dot formation with low-pressure chemical vapor deposition, Jpn. J. Appl. Phys., 35巻, part2, 2B号, pp. L189-L191, 19960201
  38. Isolated nanometer-size Si dot arrays fabricated using electron-beam lithography, reactive ion etching, and Wet Etching in NH4OH/H2O2/H2O, Jpn. J. Appl. Phys., 33巻, part2, 12B号, pp. L1796-L1798, 19941201
  39. ★, Defect-induced Raman spectra in doped CeO2, Phys. Rev. B, 50巻, 18号, pp. 13297-13307, 19941101
  40. Local-hopping mechanism of the O2- vacancy in stabilized ZrO2 studied by measuring the integrated intensity of quasielastic light scattering, Phys. Rev. B, 49巻, 21号, pp. 14949-14957, 19940601
  41. Interpretation of the temperature dependence of the luminescence intensity, lifetime, and decay profiles in porous Si, Phys. Rev. B, 49巻, 16号, pp. 11005-11009, 19940401
  42. Luminescence spectroscopy of porous Si by selective excitation, J. Phys. Soc. Jpn., 63巻, suppl. B号, pp. 190-202, 19940401
  43. c-Si like phonon structures in the luminescence of porous Si, J. Luminescence, 60＆61巻, pp. 324-326, 19940401
  44. ★, Observation of phonon structures in porous Si luminescence, Phys. Rev. Lett., 70巻, 23号, pp. 3659-3662, 19930601
  45. Microstructure of porous silicon, Appl. Phys. Lett., 62巻, 21号, pp. 2631-2633, 19930501
  46. c-Si-like phonon structures in the luminescence of porous Si:, 9th International Conference on Luminescence and Optical Spectroscopy of Condensed Matter, pp. M5-21, 19930401
  47. Quantum-size effect from photoluminescence of low-temperature-oxidized porous Si, Jpn. J. Appl. Phys., 32巻, part1, 1B号, pp. 415-418, 19930101
  48. ★, Photoluminescence of porous Si, oxidized then deoxidized chemically, Appl. Phys. Lett=, 61巻, 1号, pp. 46-48, 19920701
  49. The evidence of quantum size effect from photoluminescence of low temperature oxdized porous Si, 1994 International Conf. on Solid State Devices and Materials, pp. 472-474, 19920801
  50. Local structures in the superionic conductor Y3+-doped CeO2 studied using site-selective spectroscopy, Phys. Rev. B, 44巻, 10号, pp. 4862-4871, 19910401
  51. Soft-breakdown-suppressed ultra-thin atomic-layer-deposited silicon nitride/SiO2 stack gate dielectrics for advanced complementary metal-oxide-semiconductor technology, Appl. Phys. Lett=, 79巻, 21号, pp. 3488-3490, 20011101
  52. Characterization of atomic-layer-deposited silicon nitride/SiO2 staked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors, J. Vac. Sci. ＆ Technol., B 19巻, 4号, pp. 1138-1143, 20010701
  53. Low-temperature formation of silicon nitride gate dielectrics by atomic-Layer depositon:, Appl. Phys. Lett=, 79巻, 5号, pp. 665-667, 20010701
  54. Self-limiting atomic-layer deposition of Si on SiO2 by alternate supply of Si2H6 and SiCl4:, Appl. Phys. Lett=, 79巻, 5号, pp. 617-619, 20010701
  55. Low-temperature selective deposition of silicon on silicon nitride by time-modulated disilane flow and formation of silicon narrow wires, Appl. Phys. Lett=, 79巻, 4号, pp. 494-496, 20010701
  56. Conduction mechanism in extremely thin poly-Si wires---width dependence of Coulomb blockade effect---, Extend. Abst.2001 Int. Conf. on Solid State Devices and Materials, pp. 438-439, 20010901
  57. Atomic-layer-deposited silicon nitride/SiO2 stacked gate dielectrics for highly reliable p-MOSFETs, Applied Physics Letters, 77巻, 18号, pp. 2855-2857, 20000101
  58. Fabrication of novel double-barrier MOS transistors with poly-Si dots, Abst. of Intern. Symp. on Formation= Physics and Device Application of Quantum Dot Structures, pp. 10-10, 20000401
  59. Characterization of silicon/oxide/nitride layers by X-ray photoelectron spectroscopy, Applied Physics Letters, 75巻, 11号, pp. 1535-1537, 19990901
  60. Si single-electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-alighed process, J. Vac. Sci. ＆ Technol., B17巻, 5号, pp. 2163-2172, 19990401
  61. Microstructure and electrical properties of Sb nanocrystals formed in thin, thermally grown SiO2 layers by low-energy ion implantation, J. Vac. Sci. ＆ Technol., B 17巻, 4号, pp. 1317-1322, 19990401
  62. Calculation of electrical properties of novel double-barrier metal oxide semiconductor transistors, Jpn. J. Appl. Phys., 38巻, part1,1B号, pp. 399-402, 19990101
  63. Silicon single-electron memory using ultra-small floating gate, Fujitsu Science ＆ Technical Journal, 34巻, 2号, pp. 142-152, 19980401
  64. Coulomb blockade in Sb nanocrystals formed in thin, thermally grown SiO2 layers by low-energy ion implantation, Appl. Phys. Lett=, 73巻, 8号, pp. 1071-1073, 19980401
  65. ★, Microstructure and electrical properties of Sn nanocrystals in thin, thermally grown SiO2 layers formed via low energy ion implantation, J. Appl. Phys., 84巻, 3号, pp. 1316-1320, 19980401
  66. Theoretical analysis of write errors and number of stored electrons for ten-nanoscale Si floating-dot memory, Jpn. J. Appl. Phys., 37巻, part2, 6B号, pp. L709-L711, 19980601
  67. Calculation of electrical properties of novel double-barrier MOS transistors, Abst. of Intern. Symp. on Formation= Physics and Device Application of Quantum Dot Structures, pp. 10-10, 19980401
  68. Observation of periodic current oscillations in vertical sub-100 nm MOS-PDBFETs with wide channels, 1999 Silicon Nanoelectronics Workshop (Kyoto= June 12-13= 1999), pp. 27-28, 19980601
  69. Coulomb blockade in Sb nanocrystals in thin SiO2 film formed by using low-energy ion implantation, Silicon Nanoelectronics Workshop 1998, pp. 11-12, 19980601
  70. 極薄酸化膜中のSn ナノクリスタルの形成と単一電子帯電効果の観測, J81-C-II巻, 2号, pp. 274-275, 19980401
  71. Formation of Sn nanocrystals in SiO2 film using low-energy ion implantation, Appl. Phys. Lett=, 71巻, 25号, pp. 3652-3654, 19971201
  72. Formation of Sb nanocrystals in SiO2 film using ion implantation followed by thermal annealing, Jpn. J. Appl. Phys., 36巻, part2,11B号, pp. L1552-L1554, 19971101
  73. ★, Si single electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process, Appl. Phys. Lett=, 71巻, 3号, pp. 353-355, 19970701
  74. Single electron charging of Sn nanocrystals in thin SiO2 film formed by low energy ion implantation, Technical Digest of the 1997 IEEE International Electron Devices Meeting, pp. 159-162, 19971201
  75. Si single electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process, 1999 Silicon Nanoelectronics Workshop (Kyoto= June 12-13= 1999), pp. 26-27, 19970601
  76. ★, Room temperature operation of Si single-electron memory with self-aligned floating dot gate, Appl. Phys. Lett=, 70巻, 13号, pp. 1742-1744, 19970301
  77. ★, Microstructure and optical absorption properties of Si nanocrystals fabricated with low-pressure chemical-vapor deposition, J. Appl. Phys., 80巻, 7号, pp. 4006-4011, 19961001
  78. Room temperature operation of Si single-electron memory with self-aligned floating dot gate, Technical Digest of the 1997 IEEE International Electron Devices Meeting, pp. 952-954, 19961201
  79. Site-selective spectroscopy of Eu3+ in YSZ and Y3+-doped CeO2, Solid State Ionics, 40/41巻, pp. 316-319, 19900401
  80. Investigations of valence charge of Tb ions in ZrO2-Tb4O7 mixed conductor using XANES measurements, Solid State Ionics, 35巻, pp. 323-327, 19890401
  81. Site-selective spectroscopy of Eu3+ in YSZ and Y3+-doped CeO2, 7th Internantional Conference on Solid State Ionics=, pp. 258, 19891101
  82. Determination of ionic diffusion coefficients and activation energies in (ZrO2)1-x(YbO1.5)x system by using quasielastic light scattering, Solid State Ionics, 28-30巻, pp. 512-517, 19880401
  83. Raman and hyper-Raman scattering in oxide ion conductors, 6th International Conference on Solid State Ionics, pp. 147, 19870901
  84. ウェハ保管環境のMOSデバイス特性への影響, エアロゾル研究, 17巻, 2号, pp. 96-104, 20020601
  85. Local-hopping mechanism of an oxygen vacancy in ZrO2 doped with Sc3+ studied by measuring quasi-elastic light scattering, Solid State Ionics, 146巻, pp. 133-141, 20020101
  86. NH3-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability, Appl. Phys. Lett=, 80巻, 7号, pp. 1252-1254, 20020201
  87. Low thermal-budget ultrathin NH3-annealed atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics with excellent reliability, IEEE Electron Device Lett., 23巻, 4号, pp. 179-181, 20020401
  88. Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires, J. Appl. Phys., 91巻, 8号, pp. 5213-5220, 20020401
  89. Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal-oxide-semiconductor structures, Appl. Phys. Lett=, 80巻, 21号, pp. 3952-3954, 20020501
  90. Fabrication of Si single-electron transistors having double SiO2 barriers, Appl. Phys. Lett=, 80巻, 24号, pp. 4617-4619, 20020601
  91. Conduction mechanism of Si single-electron transistors having an one-dimensional regular array of multiple tunnel junctions, Appl. Phys. Lett=, 81巻, 4号, pp. 733-735, 20020701
  92. High quality NH3-annealed atomic Layer Deposited Si-nitride/SiO2 Stack Gate Dielectrics for Sub-100nm Technology Generations, Solid State Electron, 46巻, pp. 1657-1662, 20020401
  93. Low-temperature formation of highly-reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal-oxide-semiconductor technology, J. Vac. Sci. ＆ Technol. B, 20巻, 4号, pp. 1406-1409, 20020701
  94. Atomic-layer deposition of ZrO2 with a Si nitiride barrier layer, Appl. Phys. Lett=, 81巻, 15号, pp. 2824-2826, 20021001
  95. Response to "Comment on ’Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal-oxide-semiconductor structures’" [Appl. Phys. Lett. 81, 3681(2002)], Appl. Phys. Lett=, 81巻, 19号, pp. 3683-3684, 20021101
  96. ★, Atomic-layer-deposited silicon-nitride/SiO2 stack ---- a highly potential gate dielectrics for advanced CMOS technology, Microelectronics Reliability, 42巻, pp. 1823-1835, 20021201
  97. Soft breakdown free atomic-layer-deposited silicon-nitride/SiO2 stack gate dielectrics, Technical Digest of the 2001 IEEE International Electron Devices Meeting, pp. 133-136, 20011201
  98. Ultrathin NH3 annealed atomic layer deposited Si-nitride/SiO2 stack gate dielectrics with high reliability, 2001 International Semiconductor Device Research Symposium, pp. 26-29, 20011201
  99. Atomic-layer-deposition of Si nitride and ZrO2 for gate dielectrics, Abst. AVS Topical Conference on Atomic Layer Deposition (ALD 2002), pp. 6-6, 20020801
  100. A novel method for extracting the energy distribution of Si/SiO2 interface traps in ultrathin oxide MOS structures, the Second IEEE Conference on Nanotechnology, 20020801
  101. Time-dependent breakdown of ultrathin SiO2 gate dielectrics under static and dynamic stress, Abst. 2nd ECS Int. Semiconductor Technology Conf., pp. Abstract No.71, 20020901
  102. A comparative study of bulk and interface trap generation in ultrathin SiO2 and atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics, Forth Int. Symposium on Control of Semiconductor Interface (ISCSI-IV), pp. A6-3-A6-3, 20021001
  103. An Effective Method for Obtaining Interface Trap Distribution in MOS capacitors with Tunneling Gate Oxides, Proceedings 2002 IEEE Int. Conf. on Semiconductor Electronics (ICSE 2002), pp. 402-406, 20021201
  104. Organic Contamination Dependence of Process Induced Interface Trap Generation in Ultrathin Oxide Metal　Oxide　Semiconductor Transistors, Jpn. J. Appl. Phys., 42巻, 12A号, pp. L1429-L1432, 20031201
  105. High quality atomic-layer-deposited ultrathin Si-nitride gate dielectrics with low density of interface and bulk traps, APPLIED PHYSICS LETTERS, 83巻, 2号, pp. 335-337, 20030714
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  106. Carrier mobility in p-MOSFET with atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics, IEEE ELECTRON DEVICE LETTERS, 24巻, 7号, pp. 472-474, 200307
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  107. Biomolecule detection based on Si single-electron transistors for highly sensitive integrated sensors on a single chip, APPLIED PHYSICS LETTERS, 100巻, 2号, 20120109
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  108. In-Plane Grain Orientation Alignment of Polycrystalline Silicon Films by Normal and Oblique-Angle Ion Implantations, JAPANESE JOURNAL OF APPLIED PHYSICS, 51巻, 4号, 201204
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  109. Charge redistribution in a charge storage layer containing C-60 molecules and organic polymers for long electron retention, APPLIED PHYSICS LETTERS, 101巻, 21号, 20121119
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  110. Characteristics of metal-oxide-semiconductor field-effect transistors with a functional gate using trap charging for ultralow power operation, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 31巻, 1号, 201301
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  111. Excellent retention characteristics of nanocomposite gate insulator consisting of fullerene-containing polystyrene, APPLIED PHYSICS LETTERS, 103巻, 1号, 20130701
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  112. ★, Biomolecule detection based on Si single-electron transistors for practical use, APPLIED PHYSICS LETTERS, 103巻, 4号, 20130722
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  113. ★, Memory operation mechanism of fullerene-containing polymer memory, APPLIED PHYSICS LETTERS, 106巻, 10号, pp. 103302-1-103302-5, 20150309
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  114. Dependence of memory characteristics of fullerene-containing polymer on the kind of gate metal, JAPANESE JOURNAL OF APPLIED PHYSICS, 54巻, 10号, 201510
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  115. Novel polymer composite having diamond particles and boron nitride platelets for thermal management of electric vehicle motors, JAPANESE JOURNAL OF APPLIED PHYSICS, 55巻, 2号, pp. 027101-1-027101-8, 201602
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