中島 安理Anri Nakajima

Last Updated :2019/12/02

所属・職名
ナノデバイス・バイオ融合科学研究所ナノ集積科学研究部門准教授
メールアドレス
anakajimahiroshima-u.ac.jp

基本情報

学位

  • 理学博士(東北大学)
  • 理学修士(東北大学)

研究分野

  • 総合理工 / 応用物理学 / 応用物性

研究キーワード

  • 単一電子デバイス
  • ゲート絶縁膜
  • 原子層成長

教育活動

授業担当

  1. 2019年, 学部専門, 3ターム, 半導体プロセス工学
  2. 2019年, 修士課程・博士課程前期, 通年, 集積回路・プロセス演習
  3. 2019年, 修士課程・博士課程前期, 年度, 半導体集積科学特別研究 I
  4. 2019年, 博士課程・博士課程後期, 年度, 半導体集積科学特別研究Ⅱ
  5. 2019年, 修士課程・博士課程前期, セメスター(後期), 分子・バイオデバイス工学

研究活動

学術論文(★は代表的な論文)

  1. ★, Fullerene-Containing Electrically Conducting Electron Beam Resist for Ultrahigh Integration of Nanometer Lateral-Scale Organic Electronic Devices, SCIENTIFIC REPORTS, 7巻, JUN 27 2017
  2. ★, Application of Single-Electron Transistor to Biomolecule and Ion Sensors, Appllied Sciences, 6巻, 4号, pp. 94-1-94-4, 2016/4/01
  3. Novel polymer composite having diamond particles and boron nitride platelets for thermal management of electric vehicle motors, JAPANESE JOURNAL OF APPLIED PHYSICS, 55巻, 2号, pp. 027101-1-027101-8, FEB 2016
  4. ★, Memory operation mechanism of fullerene-containing polymer memory, APPLIED PHYSICS LETTERS, 106巻, 10号, pp. 103302-1-103302-5, MAR 9 2015
  5. Dependence of memory characteristics of fullerene-containing polymer on the kind of gate metal, JAPANESE JOURNAL OF APPLIED PHYSICS, 54巻, 10号, OCT 2015
  6. Characteristics of metal-oxide-semiconductor field-effect transistors with a functional gate using trap charging for ultralow power operation, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 31巻, 1号, JAN 2013
  7. Excellent retention characteristics of nanocomposite gate insulator consisting of fullerene-containing polystyrene, APPLIED PHYSICS LETTERS, 103巻, 1号, JUL 1 2013
  8. ★, Biomolecule detection based on Si single-electron transistors for practical use, APPLIED PHYSICS LETTERS, 103巻, 4号, JUL 22 2013
  9. Biomolecule detection based on Si single-electron transistors for highly sensitive integrated sensors on a single chip, APPLIED PHYSICS LETTERS, 100巻, 2号, JAN 9 2012
  10. In-Plane Grain Orientation Alignment of Polycrystalline Silicon Films by Normal and Oblique-Angle Ion Implantations, JAPANESE JOURNAL OF APPLIED PHYSICS, 51巻, 4号, APR 2012
  11. Charge redistribution in a charge storage layer containing C-60 molecules and organic polymers for long electron retention, APPLIED PHYSICS LETTERS, 101巻, 21号, NOV 19 2012
  12. Functional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation, APPLIED PHYSICS LETTERS, 98巻, 5号, JAN 31 2011
  13. Highly sensitive ion detection using Si single-electron transistors, APPLIED PHYSICS LETTERS, 98巻, 12号, MAR 21 2011
  14. Effect of an Ultrathin SiN Cap Layer on the Bias Temperature Instability in Metal-Oxide-Semiconductor Field-Effect Transistors with HfSiON Gate Stacks, JAPANESE JOURNAL OF APPLIED PHYSICS, 49巻, 12号, 2010
  15. ★, Impact of floating dot distribution on memory characteristics of self-aligned dots-on-nanowire memory, JOURNAL OF APPLIED PHYSICS, 105巻, 11号, JUN 1 2009
  16. Conduction Path Fluctuation in Silicon Two-Dimensional Tunnel Junction Array, JAPANESE JOURNAL OF APPLIED PHYSICS, 48巻, 6号, JUN 2009
  17. Fabrication of Si Nanowire Field-Effect Transistor for Highly Sensitive, Label-Free Biosensing, JAPANESE JOURNAL OF APPLIED PHYSICS, 48巻, 6号, JUN 2009
  18. Monte Carlo Simulation of the Two-Dimensional Site Percolation Problem for Designing Sensitive and Quantitatively Analyzable Field-Effect Transistors, JAPANESE JOURNAL OF APPLIED PHYSICS, 48巻, 10号, OCT 2009
  19. Bias temperature instability in metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Si-nitride/SiO(2) stack gate dielectrics, JOURNAL OF APPLIED PHYSICS, 103巻, 8号, APR 15 2008
  20. Silicon single-electron memory having in-plane dot with double gates, JAPANESE JOURNAL OF APPLIED PHYSICS, 47巻, 6号, pp. 4985-4987, JUN 2008
  21. Dependence of charge storage and programming characteristics on dot number of floating dot memory, APPLIED PHYSICS LETTERS, 92巻, 22号, JUN 2 2008
  22. Electron detrapping characteristics in positive bias temperature stressed n-channel metal-oxide-semiconductor field-effect transistors with ultrathin HfSiON gate dielectrics, APPLIED PHYSICS LETTERS, 91巻, 3号, JUL 16 2007
  23. Improvement in mobility and negative-bias temperature instability in metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Si-nitride/SiO2 stack dielectrics, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46巻, 4B号, pp. 1874-1878, APR 2007
  24. Ar annealing for suppression of gate oxide thinning at shallow trench isolation edge, IEEE ELECTRON DEVICE LETTERS, 28巻, 7号, pp. 562-564, JUL 2007
  25. Electrical characteristics of Si single-electron transistor based on multiple islands, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46巻, 9B号, pp. 6233-6236, SEP 2007
  26. Atomic layer deposition of HfO2 and Si nitride on Ge substrates, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46巻, 12号, pp. 7699-7701, DEC 2007
  27. ★, Mechanism of Static and Dynamic Bias Temperature Instability in p- and n-MOSFETs, ECS transaction, 6巻, 3号, pp. 203-228, 2007
  28. Influence of bulk bias on negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin SiON gate dielectrics, JOURNAL OF APPLIED PHYSICS, 99巻, 6号, MAR 15 2006
  29. Mechanism of dynamic bias temperature instability in p- and nMOSFETs: The effect of pulse waveform, IEEE TRANSACTIONS ON ELECTRON DEVICES, 53巻, 8号, pp. 1805-1814, AUG 2006
  30. Atomic layer deposition of HfO2 using Hf[N(C2H5)(2)](4) and H2O, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45巻, 9A号, pp. 7091-7093, SEP 2006
  31. Cotunneling current in Si single-electron transistor based on multiple islands, APPLIED PHYSICS LETTERS, 89巻, 18号, OCT 30 2006
  32. Interface trap generation induced by charge pumping current under dynamic oxide field stresses, IEEE ELECTRON DEVICE LETTERS, 26巻, 3号, pp. 216-218, MAR 2005
  33. Abnormal enhancement of interface trap generation under dynamic oxide field stress at MHz region, APPLIED PHYSICS LETTERS, 86巻, 8号, FEB 21 2005
  34. Modified direct-current current-voltage method for interface trap density extraction in metal-oxide-semiconductor field-effect-transistor with tunneling gate dielectrics at high temperature, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 44巻, 1-7号, pp. L60-L62, 2005
  35. Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor, APPLIED PHYSICS LETTERS, 86巻, 12号, MAR 21 2005
  36. Enhancement of BTI degradation in pMOSFETs under high-frequency bipolar gate bias, IEEE ELECTRON DEVICE LETTERS, 26巻, 6号, pp. 387-389, JUN 2005
  37. Atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics for future high-speed DRAM with enhanced reliability, IEEE ELECTRON DEVICE LETTERS, 26巻, 8号, pp. 538-540, AUG 2005
  38. Annealing temperature dependence on nickel-germanium solid-state reaction, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 44巻, 24-27号, pp. L753-L755, 2005
  39. Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics, JOURNAL OF APPLIED PHYSICS, 98巻, 11号, DEC 1 2005
  40. Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands, JOURNAL OF APPLIED PHYSICS, 98巻, 12号, DEC 15 2005
  41. Carrier mobility in metal-oxide-semiconductor field effect transistor with atomic-layer-deposited Si-nitride gate dielectrics, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 44巻, 28-32号, pp. L903-L905, 2005
  42. Pulse waveform dependence on AC bias temperature instability in pMOSFETs, IEEE ELECTRON DEVICE LETTERS, 26巻, 9号, pp. 658-660, SEP 2005
  43. Growth and electrical properties of atomic-layer deposited ZrO2/Si-nitride stack gate dielectrics, JOURNAL OF APPLIED PHYSICS, 95巻, 2号, pp. 536-542, JAN 15 2004
  44. Application of highly-doped Si single-electron transistors to an exclusive-NOR operation, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 43巻, 3B号, pp. L418-L420, MAR 15 2004
  45. Organic Contamination Dependence of Process Induced Interface Trap Generation in Ultrathin Oxide Metal Oxide Semiconductor Transistors, Jpn. J. Appl. Phys., 42巻, 12A号, pp. L1429-L1432, 20031201
  46. High quality atomic-layer-deposited ultrathin Si-nitride gate dielectrics with low density of interface and bulk traps, APPLIED PHYSICS LETTERS, 83巻, 2号, pp. 335-337, JUL 14 2003
  47. Carrier mobility in p-MOSFET with atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics, IEEE ELECTRON DEVICE LETTERS, 24巻, 7号, pp. 472-474, JUL 2003
  48. ウェハ保管環境のMOSデバイス特性への影響, エアロゾル研究, 17巻, 2号, pp. 96-104, 20020601
  49. Local-hopping mechanism of an oxygen vacancy in ZrO2 doped with Sc3+ studied by measuring quasi-elastic light scattering, Solid State Ionics, 146巻, pp. 133-141, 20020101
  50. NH3-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability, Appl. Phys. Lett=, 80巻, 7号, pp. 1252-1254, 20020201
  51. Low thermal-budget ultrathin NH3-annealed atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics with excellent reliability, IEEE Electron Device Lett., 23巻, 4号, pp. 179-181, 20020401
  52. Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires, J. Appl. Phys., 91巻, 8号, pp. 5213-5220, 20020401
  53. Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal-oxide-semiconductor structures, Appl. Phys. Lett=, 80巻, 21号, pp. 3952-3954, 20020501
  54. Fabrication of Si single-electron transistors having double SiO2 barriers, Appl. Phys. Lett=, 80巻, 24号, pp. 4617-4619, 20020601
  55. Conduction mechanism of Si single-electron transistors having an one-dimensional regular array of multiple tunnel junctions, Appl. Phys. Lett=, 81巻, 4号, pp. 733-735, 20020701
  56. High quality NH3-annealed atomic Layer Deposited Si-nitride/SiO2 Stack Gate Dielectrics for Sub-100nm Technology Generations, Solid State Electron, 46巻, pp. 1657-1662, 20020401
  57. Low-temperature formation of highly-reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal-oxide-semiconductor technology, J. Vac. Sci. & Technol. B, 20巻, 4号, pp. 1406-1409, 20020701
  58. Atomic-layer deposition of ZrO2 with a Si nitiride barrier layer, Appl. Phys. Lett=, 81巻, 15号, pp. 2824-2826, 20021001
  59. Response to "Comment on ’Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal-oxide-semiconductor structures’" [Appl. Phys. Lett. 81, 3681(2002)], Appl. Phys. Lett=, 81巻, 19号, pp. 3683-3684, 20021101
  60. ★, Atomic-layer-deposited silicon-nitride/SiO2 stack ---- a highly potential gate dielectrics for advanced CMOS technology, Microelectronics Reliability, 42巻, pp. 1823-1835, 20021201
  61. Fabrication Technologies for Double-SiO2-Barrier MOS Transistor with a Poly-Si Dot, Jpn. J. Appl. Phys., 40巻, 3B号, pp. 2017-2020, 20010301
  62. Soft-breakdown-suppressed ultra-thin atomic-layer-deposited silicon nitride/SiO2 stack gate dielectrics for advanced complementary metal-oxide-semiconductor technology, Appl. Phys. Lett=, 79巻, 21号, pp. 3488-3490, 20011101
  63. Characterization of atomic-layer-deposited silicon nitride/SiO2 staked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors, J. Vac. Sci. & Technol., B 19巻, 4号, pp. 1138-1143, 20010701
  64. Low-temperature formation of silicon nitride gate dielectrics by atomic-Layer depositon:, Appl. Phys. Lett=, 79巻, 5号, pp. 665-667, 20010701
  65. Self-limiting atomic-layer deposition of Si on SiO2 by alternate supply of Si2H6 and SiCl4:, Appl. Phys. Lett=, 79巻, 5号, pp. 617-619, 20010701
  66. Low-temperature selective deposition of silicon on silicon nitride by time-modulated disilane flow and formation of silicon narrow wires, Appl. Phys. Lett=, 79巻, 4号, pp. 494-496, 20010701
  67. Atomic-layer-deposited silicon nitride/SiO2 stacked gate dielectrics for highly reliable p-MOSFETs, Applied Physics Letters, 77巻, 18号, pp. 2855-2857, 20000101
  68. Characterization of silicon/oxide/nitride layers by X-ray photoelectron spectroscopy, Applied Physics Letters, 75巻, 11号, pp. 1535-1537, 19990901
  69. Si single-electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-alighed process, J. Vac. Sci. & Technol., B17巻, 5号, pp. 2163-2172, 19990401
  70. Microstructure and electrical properties of Sb nanocrystals formed in thin, thermally grown SiO2 layers by low-energy ion implantation, J. Vac. Sci. & Technol., B 17巻, 4号, pp. 1317-1322, 19990401
  71. Calculation of electrical properties of novel double-barrier metal oxide semiconductor transistors, Jpn. J. Appl. Phys., 38巻, part1,1B号, pp. 399-402, 19990101
  72. Silicon single-electron memory using ultra-small floating gate, Fujitsu Science & Technical Journal, 34巻, 2号, pp. 142-152, 19980401
  73. Coulomb blockade in Sb nanocrystals formed in thin, thermally grown SiO2 layers by low-energy ion implantation, Appl. Phys. Lett=, 73巻, 8号, pp. 1071-1073, 19980401
  74. ★, Microstructure and electrical properties of Sn nanocrystals in thin, thermally grown SiO2 layers formed via low energy ion implantation, J. Appl. Phys., 84巻, 3号, pp. 1316-1320, 19980401
  75. Theoretical analysis of write errors and number of stored electrons for ten-nanoscale Si floating-dot memory, Jpn. J. Appl. Phys., 37巻, part2, 6B号, pp. L709-L711, 19980601
  76. 極薄酸化膜中のSn ナノクリスタルの形成と単一電子帯電効果の観測, J81-C-II巻, 2号, pp. 274-275, 19980401
  77. Formation of Sn nanocrystals in SiO2 film using low-energy ion implantation, Appl. Phys. Lett=, 71巻, 25号, pp. 3652-3654, 19971201
  78. Formation of Sb nanocrystals in SiO2 film using ion implantation followed by thermal annealing, Jpn. J. Appl. Phys., 36巻, part2,11B号, pp. L1552-L1554, 19971101
  79. ★, Si single electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process, Appl. Phys. Lett=, 71巻, 3号, pp. 353-355, 19970701
  80. ★, Room temperature operation of Si single-electron memory with self-aligned floating dot gate, Appl. Phys. Lett=, 70巻, 13号, pp. 1742-1744, 19970301
  81. ★, Si quantum dot formation with low-pressure chemical vapor deposition, Jpn. J. Appl. Phys., 35巻, part2, 2B号, pp. L189-L191, 19960201
  82. ★, Microstructure and optical absorption properties of Si nanocrystals fabricated with low-pressure chemical-vapor deposition, J. Appl. Phys., 80巻, 7号, pp. 4006-4011, 19961001
  83. Isolated nanometer-size Si dot arrays fabricated using electron-beam lithography, reactive ion etching, and Wet Etching in NH4OH/H2O2/H2O, Jpn. J. Appl. Phys., 33巻, part2, 12B号, pp. L1796-L1798, 19941201
  84. ★, Defect-induced Raman spectra in doped CeO2, Phys. Rev. B, 50巻, 18号, pp. 13297-13307, 19941101
  85. Local-hopping mechanism of the O2- vacancy in stabilized ZrO2 studied by measuring the integrated intensity of quasielastic light scattering, Phys. Rev. B, 49巻, 21号, pp. 14949-14957, 19940601
  86. Interpretation of the temperature dependence of the luminescence intensity, lifetime, and decay profiles in porous Si, Phys. Rev. B, 49巻, 16号, pp. 11005-11009, 19940401
  87. Luminescence spectroscopy of porous Si by selective excitation, J. Phys. Soc. Jpn., 63巻, suppl. B号, pp. 190-202, 19940401
  88. c-Si like phonon structures in the luminescence of porous Si, J. Luminescence, 60&61巻, pp. 324-326, 19940401
  89. ★, Observation of phonon structures in porous Si luminescence, Phys. Rev. Lett., 70巻, 23号, pp. 3659-3662, 19930601
  90. Microstructure of porous silicon, Appl. Phys. Lett., 62巻, 21号, pp. 2631-2633, 19930501
  91. Quantum-size effect from photoluminescence of low-temperature-oxidized porous Si, Jpn. J. Appl. Phys., 32巻, part1, 1B号, pp. 415-418, 19930101
  92. ★, Photoluminescence of porous Si, oxidized then deoxidized chemically, Appl. Phys. Lett=, 61巻, 1号, pp. 46-48, 19920701
  93. Local structures in the superionic conductor Y3+-doped CeO2 studied using site-selective spectroscopy, Phys. Rev. B, 44巻, 10号, pp. 4862-4871, 19910401
  94. Site-selective spectroscopy of Eu3+ in YSZ and Y3+-doped CeO2, Solid State Ionics, 40/41巻, pp. 316-319, 19900401
  95. Investigations of valence charge of Tb ions in ZrO2-Tb4O7 mixed conductor using XANES measurements, Solid State Ionics, 35巻, pp. 323-327, 19890401
  96. Determination of ionic diffusion coefficients and activation energies in (ZrO2)1-x(YbO1.5)x system by using quasielastic light scattering, Solid State Ionics, 28-30巻, pp. 512-517, 19880401