横川 凌RYO YOKOGAWA

Last Updated :2025/03/04

所属・職名
広島大学　助教
メールアドレス
yokogawahiroshima-u.ac.jp
自己紹介
次世代電子・熱電発電デバイス実現へ向けた半導体材料の物性評価、作製に関する研究を行っています。主にIV族半導体であるSiやGeを研究対象にしており、微細化や混晶化すると原子スケールで何が生じているかを明らかにしつつ、低消費電力化かつ無給電発電デバイスの創成を目指しています。

基本情報

主な職歴

  • 2024年12月, 広島大学, 半導体産業技術研究所, 助教
  • 2020年04月, 2024年11月, 明治大学, 理工学部 電気電子生命学科, 助教
  • 2020年04月, 2021年03月, 公益財団法人高輝度光科学研究センター(JASRI), 客員研究員
  • 2017年04月, 2020年03月, 日本学術振興会, 特別研究員DC1

学歴

  • 明治大学, 理工学研究科, 電気工学専攻博士後期課程, 2017年04月, 2020年03月
  • 明治大学, 理工学研究科, 電気工学専攻博士前期課程, 2015年04月, 2017年03月
  • 明治大学, 理工学部, 電気電子生命学科, 2011年04月, 2015年03月

学位

  • 修士（工学）　(明治大学)
  • 博士（工学）　(明治大学)

研究キーワード

  • 結晶工学
  • フォノンエンジニアリング
  • 熱電発電デバイス
  • Siナノワイヤ
  • シリコンゲルマニウム(SiGe)
  • ラマン分光法
  • X線非弾性散乱法

研究活動

学術論文（★は代表的な論文）

  1. Temperature and Ge fraction dependence of broad peaks observed in Ge-rich SiGe Raman spectra by oil-immersion Raman spectroscopy, Japanese Journal of Applied Physics, 63巻, 12号, pp. 125504-125504, 202412
  2. Evaluation of Band Structure of Single Crystalline Si-Rich SiSn thin Film, ECS Transactions, 114巻, 2号, pp. 225-232, 20240927
  3. Optical Properties of Multilayered Staggered SiGe Nanodots Depending on Si Spacer Growth Temperature, ECS Transactions, 114巻, 2号, pp. 207-214, 20240927
  4. Determination of Ge-fraction-shift coefficients for Raman spectroscopy in all vibration modes investigated by single-crystalline bulk SiGe and its application to strain evaluation in SiGe film grown on substrate, Japanese Journal of Applied Physics, 63巻, 3号, pp. 035503-035503, 202403
  5. Strain and optical characteristics analyses of three-dimentional self-ordered multilayered SiGe nanodots by photoluminescence and Raman spectroscopy, Japanese Journal of Applied Physics, 63巻, 3号, pp. 03SP31-03SP31, 202402
  6. Local thermal conductivity properties of a SiGe nanowire observed by laser power sweep Raman spectroscopy, Japanese Journal of Applied Physics, 63巻, 2号, pp. 02SP68-02SP68, 202401
  7. Strain distributions in carbon-doped silicon nanowires along [110] and [100] investigated by X-ray diffraction, Japanese Journal of Applied Physics, 63巻, 1号, pp. 01SP11-01SP11, 202312
  8. Evaluation of Anisotropic Biaxial Stress in Extremely-Thin Body (100) Silicon-Germanium-on-Insulator p-Type Metal-Oxide-Semiconductor Field-Effect-Transistor by Oil-Immersion Raman Spectroscopy, ECS Transactions, 112巻, 1号, pp. 37-43, 202309
  9. Temperature Dependence of Raman Peak Shift in Single-Crystalline Silicon-Germanium, ECS Journal of Solid State Science and Technology, 12巻, 6号, pp. 064004-064004, 202306
  10. Analysis of InGaAs/InP p-I-n Photodiode Failed by Electrostatic Discharge, Journal of Electronic Materials, 52巻, 8号, pp. 5150-5158, 20230524
  11. Evaluation of Strain-Relaxation of Carbon-Doped Silicon Nanowires and Its Crystal Orientation Dependence Using X-Ray Diffraction Reciprocal Space Mapping, Journal of Electronic Materials, 52巻, 8号, pp. 5140-5149, 20230523
  12. Inelastic X-ray Scattering Measurement on Single-Crystalline GeSn Thin Film, Journal of Electronic Materials, 52巻, 8号, pp. 5128-5133, 20230508
  13. Conformal deposition of WS2 layered film by low-temperature metal-organic chemical vapor deposition, Japanese Journal of Applied Physics, 62巻, SG号, pp. SG1048-SG1048, 202305
  14. Effect of sawing damage on flexibility of crystalline silicon wafers for thin flexible silicon solar cells, Japanese Journal of Applied Physics, 62巻, 1号, 20230101
  15. Non-seed chemical bath deposition of ZnO films in a rotating continuous flow reactor with various carboxylic acids and their application to transparent conductive films, CRYSTENGCOMM, 24巻, 47号, pp. 8294-8302, 202212
  16. レーザーラマン分光法による半導体評価の最前線, レーザー研究, 50巻, 10号, pp. 575-579, 202210
  17. Distribution Evaluation of Optical Properties in Silicon Germanium Films Grown on Silicon Substrates with Graded Silicon Germanium Buffer Layers, ECS Transactions, 109巻, 4号, pp. 367-374, 20220930
  18. Investigation of Band Structure in Strained Single Crystalline Si1-X Sn X , ECS Transactions, 109巻, 4号, pp. 359-366, 20220930
  19. Evaluation of Strained Group IV Semiconductor Devices by Oil-Immersion Raman Spectroscopy, ECS Transactions, 109巻, 4号, pp. 351-357, 202209
  20. Study on phonon lifetime in bulk silicon–germanium through observation of acoustic phonon spectra broadening by inelastic x-ray scattering, Applied Physics Letters, 121巻, 8号, pp. 082105-082105, 20220822
  21. Modification and Characterization of Interfacial Bonding for Thermal Management of Ruthenium Interconnects in Next-Generation Very-Large-Scale Integration Circuits, ACS Applied Materials and Interfaces, 14巻, 5号, pp. 7392-7404, 20220209
  22. Atomic mass dependency of a localized phonon mode in SiGe alloys, AIP Advances, 11巻, 11号, pp. 115225-115225, 202111
  23. Dependency of a localized phonon mode intensity on compositional cluster size in SiGe alloys, AIP Advances, 11巻, 7号, pp. 075017-075017, 202107
  24. Thermal conductivity and inelastic X-ray scattering measurements on SiGeSn polycrystalline alloy, Japanese Journal of Applied Physics, 60巻, SB号, pp. SBBF11-SBBF11, 202105
  25. Phonon properties of group IV materials for thermoelectric applications, 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, 20210408
  26. Effect of Growth Parameters on MoS2Film Quality Deposited by Low-Temperature MOCVD Using I-Pr2DADmo(CO)3and (t-C4H9)2S2, ECS Transactions, 104巻, 3号, pp. 3-15, 2021
  27. Evaluation of Mo(1-x)W xs Alloy Fabricated by Combinatorial Film Deposition, ECS Transactions, 104巻, 3号, pp. 21-28, 2021
  28. Strain evaluation in Ge and Sn implanted Si layers with laser and rapid thermal annealing, Materials Science in Semiconductor Processing, 120巻, pp. 105282-105282, 202012
  29. Origin of carrier lifetime degradation in floating-zone silicon during a high-temperature process for insulated gate bipolar transistor, Japanese Journal of Applied Physics, 59巻, 11号, pp. 115503-1-115503-6, 202011
  30. Evaluation of Thermal Conductivity Characteristics in Polycrystalline Silicon - The Effect of Nanostructure in the Grains, ECS Transactions, 98巻, 5号, pp. 437-446, 202009
  31. Evaluation of Silicon Nitride Film Formed by Atomic Layer Deposition on the Silicon Substrate with Trench Structure Using Angle-Resolved Hard X-ray Photoelectron Spectroscopy, ECS Transactions, 98巻, 3号, pp. 113-120, 202009
  32. Evaluation of Thermal Expansion Coefficient in Ge1-x Sn x Nanowire Using Reciprocal Space Mapping, ECS Transactions, 98巻, 5号, pp. 481-490, 202009
  33. Evaluation of Temperature and Germanium Concentration Dependence of EXAFS Oscillations in Si-Rich Silicon Germanium Thin Films, ECS Transactions, 98巻, 5号, pp. 473-479, 202009
  34. Observation of an Unidentified Phonon Peak in SiGe Alloys and Superlattices Using Molecular Dynamics Simulation, ECS Transactions, 98巻, 5号, pp. 533-546, 202009
  35. Evaluation of Strain-Shift Coefficients for SiSn by Raman Spectroscopy, ECS Transactions, 98巻, 5号, pp. 291-300, 202009
  36. Evaluation of Phonon Dispersion Relation for Bulk Silicon Germanium by Inelastic X-ray Scattering, ECS Transactions, 98巻, 5号, pp. 465-472, 202009
  37. Quantification of Ge fraction using local vibrational modes in Raman spectra of silicon germanium by oil-immersion Raman spectroscopy, Japanese Journal of Applied Physics, 59巻, 7号, pp. 075502-075502, 20200701
  38. Anomalous low energy phonon dispersion in bulk silicon-germanium observed by inelastic x-ray scattering, Applied Physics Letters, 116巻, 24号, pp. 242104-242104, 20200615
  39. Evaluation of Sawing Damage for Thin Flexible Silicon Solar Cells, Conference Record of the IEEE Photovoltaic Specialists Conference, 2020-June巻, pp. 0875-0880, 20200614
  40. Phonon dispersion of bulk Ge-rich SiGe: inelastic X-ray scattering studies, Japanese Journal of Applied Physics, 59巻, 6号, pp. 061003-1-061003-6, 202006
  41. Stress evaluation induced by wiggling silicon nitride fine pattern using Raman spectroscopy, Japanese Journal of Applied Physics, 59巻, SI号, pp. SIIF03-1-SIIF03-6, 202006
  42. Thermal conductivity characteristics in polycrystalline silicon with different average sizes of grain and nanostructures in the grains by UV Raman spectroscopy, Japanese Journal of Applied Physics, 59巻, 7号, pp. 075501-1-075501-7, 202005
  43. Anisotropic biaxial stress evaluation in metal-organic chemical vapor deposition grown Ge1-xSnx mesa structure by oil-immersion Raman spectroscopy, Thin Solid Films, 697巻, pp. 137797-1-137797-5, 202003
  44. Anisotropic Biaxial Strain Evaluation in Carbon-Doped Silicon Using Water-Immersion Raman Spectroscopy, ECS Transactions, 92巻, 4号, pp. 33-39, 201907
  45. Ultra-Thin Lightweight Bendable Crystalline Si Solar Cells for Solar Vehicles, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1131-1134, 201906
  46. Evaluation of thermal conductivity characteristics in Si nanowire covered with oxide by UV Raman spectroscopy, Japanese Journal of Applied Physics, 58巻, SD号, pp. SDDF04-1-SDDF04-5, 201906
  47. Evaluations of minority carrier lifetime in floating zone Si affected by Si insulated gate bipolar transistor processes, Japanese Journal of Applied Physics, 58巻, SB号, pp. SBBD07-1-SBBD07-6, 201904
  48. Determination of phonon deformation potentials and strain-shift coefficients in Ge-rich Si1-xGex using bulk Ge-rich Si1-xGex crystals and oil-immersion Raman spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS, 57巻, 10号, pp. 106601-1-106601-6, 201810
  49. Strain Evaluation of Laser-annealed SiGe Thin Layers, ECS Transactions, 86巻, 7号, pp. 59-65, 201809
  50. Determination of Phonon Deformation Potentials in Carbon-doped Silicon, ECS Transactions, 86巻, 7号, pp. 419-425, 201809
  51. Evaluation of Anisotropic Three-Dimensional Strain Relaxation in Stripe-Shaped Ge1-xSnx Mesa Structure, ECS Transactions, 86巻, 7号, pp. 329-336, 201809
  52. Evaluation of Laterally Graded Silicon Germanium Wires for Thermoelectric Devices Fabricated by Rapid Melting Growth, ECS Transactions, 86巻, 7号, pp. 87-93, 201809
  53. Evaluation of Anisotropic Biaxial Stress Induced Around Trench Gate of Si Power Transistor Using Water-Immersion Raman Spectroscopy, Journal of Electronic Materials, 47巻, pp. 1-6, 20180503
  54. Miniaturized planar Si-nanowire micro-thermoelectric generator using exuded thermal field for power generation, Science and Technology of Advanced Materials, 19巻, 1号, pp. 443-453, 201805
  55. Probing spatial heterogeneity in silicon thin films by Raman spectroscopy, Scientific Reports, 7巻, pp. 16549-1-16549-8, 201711
  56. Local anisotropic strain evaluation in thin Ge epitaxial film using SiGe stressor template grown on Ge substrate by selective ion implantation, Japanese Journal of Applied Physics, 56巻, 11号, pp. 110313-1-110313-4, 20171101
  57. Enhanced nickelidation rate in silicon nanowires with interfacial lattice disorder, Journal of Applied Physics, 122巻, 14号, pp. 144305-1-144305-7, 201710
  58. Evaluation of controlled strain in silicon nanowire by UV Raman spectroscopy, Japanese Journal of Applied Physics, 56巻, 6号, pp. 06GG10-1-06GG10-5, 20170601
  59. Biaxial stress evaluation in GeSn film epitaxially grown on Ge substrate by oil-immersion Raman spectroscopy, Japanese Journal of Applied Physics, 55巻, 9号, pp. 091301-1-091301-4, 20160901
  60. Origin of additional broad peaks in Raman spectra from thin germanium-rich silicon-germanium films, Applied Physics Express, 9巻, 7号, pp. 071301-1-071301-4, 20160701
  61. In-plane biaxial strain evaluation induced in Ge1-xSnx films using oil-immersion raman spectroscopy, ECS Transactions, 75巻, 8号, pp. 589-597, 2016
  62. Crystallinity evaluation of low temperature polycrystalline silicon thin film using UV/visible Raman spectroscopy, ECS Transactions, 72巻, 4号, pp. 249-255, 2016
  63. Evaluation of anisotropic biaxial stress in Si1-xGex/Ge mesa-structure by oil-immersion raman spectroscopy, ECS Transactions, 66巻, 4号, pp. 39-45, 2015
  64. On the origin of the gate oxide failure evaluated by Raman spectroscopy, ECS Transactions, 66巻, 4号, pp. 237-243, 2015
  65. Evaluation of Anisotropic Biaxial Stress in Thin Strained-SiGe Layer Using Surface Enhanced Raman Spectroscopy, ECS Transactions, 64巻, 6号, pp. 841-847, 201410

受賞

  1. 2024年12月, スポンサー賞(東レエンジニアリング賞), SEMICON JAPAN アカデミアAward 2024
  2. 2024年09月, 第56回(2024年春季)応用物理学会講演奨励賞, 応用物理学会
  3. 2020年12月, 講演奨励賞, 第四回フォノンエンジニアリング研究会
  4. 2020年06月
  5. 2020年02月, 研究会活性化奨励賞, 電子デバイス界面テクノロジー研究会-材料・プロセス・評価の物理-(第25回)
  6. 2019年01月, 研究会活性化奨励賞, 電子デバイス界面テクノロジー研究会-材料・プロセス・評価の物理-(第24回)
  7. 2017年03月, 大学院長賞, 明治大学大学院
  8. 2015年03月, 電気電子生命学科学業成績優秀賞, 明治大学
  9. 2013年04月, 神保賞, 明治大学

外部資金

競争的資金等の採択状況

  1. 科学研究費助成事業, 斜入射X線非弾性散乱法によるGeおよびSi表面・界面のフォノン散乱解明に関する研究, 2024年04月, 2027年03月
    関連URL
  2. 第14回 一般財団法人キヤノン財団 「新産業を生む科学技術」, 偏析と転写によるゲルマニウムナノシート/絶縁膜積層基板の創出, 2023年04月, 2026年03月
  3. 科学研究費助成事業 若手研究, 温度可変ラマン分光法によるSiGe混晶の微視的な熱伝導機構解明に関する研究, 2021年04月, 2024年03月
    関連URL
  4. 科学研究費助成事業 研究活動スタート支援, 温度可変放射光X線回折による熱電発電Siデバイスの局所領域熱特性評価に関する研究, 2020年09月, 2022年03月
    関連URL
  5. 科学研究費助成事業 特別研究員奨励費, ラマン分光オペランド測定による極微細熱電発電Ｓｉナノワイヤデバイスの熱伝導率評価, 2017年04月, 2020年03月
    関連URL