横川 凌RYO YOKOGAWA
Last Updated :2025/03/04
- 所属・職名
- 広島大学 助教
- メールアドレス
- yokogawa
hiroshima-u.ac.jp
- 自己紹介
- 次世代電子・熱電発電デバイス実現へ向けた半導体材料の物性評価、作製に関する研究を行っています。主にIV族半導体であるSiやGeを研究対象にしており、微細化や混晶化すると原子スケールで何が生じているかを明らかにしつつ、低消費電力化かつ無給電発電デバイスの創成を目指しています。
基本情報
主な職歴
- 2024年12月, 広島大学, 半導体産業技術研究所, 助教
- 2020年04月, 2024年11月, 明治大学, 理工学部 電気電子生命学科, 助教
- 2020年04月, 2021年03月, 公益財団法人高輝度光科学研究センター(JASRI), 客員研究員
- 2017年04月, 2020年03月, 日本学術振興会, 特別研究員DC1
学歴
- 明治大学, 理工学研究科, 電気工学専攻博士後期課程, 2017年04月, 2020年03月
- 明治大学, 理工学研究科, 電気工学専攻博士前期課程, 2015年04月, 2017年03月
- 明治大学, 理工学部, 電気電子生命学科, 2011年04月, 2015年03月
学位
- 修士(工学) (明治大学)
- 博士(工学) (明治大学)
研究キーワード
- 結晶工学
- フォノンエンジニアリング
- 熱電発電デバイス
- Siナノワイヤ
- シリコンゲルマニウム(SiGe)
- ラマン分光法
- X線非弾性散乱法
研究活動
学術論文(★は代表的な論文)
- Temperature and Ge fraction dependence of broad peaks observed in Ge-rich SiGe Raman spectra by oil-immersion Raman spectroscopy, Japanese Journal of Applied Physics, 63巻, 12号, pp. 125504-125504, 202412
- Evaluation of Band Structure of Single Crystalline Si-Rich SiSn thin Film, ECS Transactions, 114巻, 2号, pp. 225-232, 20240927
- Optical Properties of Multilayered Staggered SiGe Nanodots Depending on Si Spacer Growth Temperature, ECS Transactions, 114巻, 2号, pp. 207-214, 20240927
- Determination of Ge-fraction-shift coefficients for Raman spectroscopy in all vibration modes investigated by single-crystalline bulk SiGe and its application to strain evaluation in SiGe film grown on substrate, Japanese Journal of Applied Physics, 63巻, 3号, pp. 035503-035503, 202403
- Strain and optical characteristics analyses of three-dimentional self-ordered multilayered SiGe nanodots by photoluminescence and Raman spectroscopy, Japanese Journal of Applied Physics, 63巻, 3号, pp. 03SP31-03SP31, 202402
- Local thermal conductivity properties of a SiGe nanowire observed by laser power sweep Raman spectroscopy, Japanese Journal of Applied Physics, 63巻, 2号, pp. 02SP68-02SP68, 202401
- Strain distributions in carbon-doped silicon nanowires along [110] and [100] investigated by X-ray diffraction, Japanese Journal of Applied Physics, 63巻, 1号, pp. 01SP11-01SP11, 202312
- Evaluation of Anisotropic Biaxial Stress in Extremely-Thin Body (100) Silicon-Germanium-on-Insulator p-Type Metal-Oxide-Semiconductor Field-Effect-Transistor by Oil-Immersion Raman Spectroscopy, ECS Transactions, 112巻, 1号, pp. 37-43, 202309
- Temperature Dependence of Raman Peak Shift in Single-Crystalline Silicon-Germanium, ECS Journal of Solid State Science and Technology, 12巻, 6号, pp. 064004-064004, 202306
- Analysis of InGaAs/InP p-I-n Photodiode Failed by Electrostatic Discharge, Journal of Electronic Materials, 52巻, 8号, pp. 5150-5158, 20230524
- Evaluation of Strain-Relaxation of Carbon-Doped Silicon Nanowires and Its Crystal Orientation Dependence Using X-Ray Diffraction Reciprocal Space Mapping, Journal of Electronic Materials, 52巻, 8号, pp. 5140-5149, 20230523
- Inelastic X-ray Scattering Measurement on Single-Crystalline GeSn Thin Film, Journal of Electronic Materials, 52巻, 8号, pp. 5128-5133, 20230508
- Conformal deposition of WS2 layered film by low-temperature metal-organic chemical vapor deposition, Japanese Journal of Applied Physics, 62巻, SG号, pp. SG1048-SG1048, 202305
- Effect of sawing damage on flexibility of crystalline silicon wafers for thin flexible silicon solar cells, Japanese Journal of Applied Physics, 62巻, 1号, 20230101
- Non-seed chemical bath deposition of ZnO films in a rotating continuous flow reactor with various carboxylic acids and their application to transparent conductive films, CRYSTENGCOMM, 24巻, 47号, pp. 8294-8302, 202212
- レーザーラマン分光法による半導体評価の最前線, レーザー研究, 50巻, 10号, pp. 575-579, 202210
- Distribution Evaluation of Optical Properties in Silicon Germanium Films Grown on Silicon Substrates with Graded Silicon Germanium Buffer Layers, ECS Transactions, 109巻, 4号, pp. 367-374, 20220930
- Investigation of Band Structure in Strained Single Crystalline Si1-X Sn X , ECS Transactions, 109巻, 4号, pp. 359-366, 20220930
- Evaluation of Strained Group IV Semiconductor Devices by Oil-Immersion Raman Spectroscopy, ECS Transactions, 109巻, 4号, pp. 351-357, 202209
- Study on phonon lifetime in bulk silicon–germanium through observation of acoustic phonon spectra broadening by inelastic x-ray scattering, Applied Physics Letters, 121巻, 8号, pp. 082105-082105, 20220822
- Modification and Characterization of Interfacial Bonding for Thermal Management of Ruthenium Interconnects in Next-Generation Very-Large-Scale Integration Circuits, ACS Applied Materials and Interfaces, 14巻, 5号, pp. 7392-7404, 20220209
- Atomic mass dependency of a localized phonon mode in SiGe alloys, AIP Advances, 11巻, 11号, pp. 115225-115225, 202111
- Dependency of a localized phonon mode intensity on compositional cluster size in SiGe alloys, AIP Advances, 11巻, 7号, pp. 075017-075017, 202107
- Thermal conductivity and inelastic X-ray scattering measurements on SiGeSn polycrystalline alloy, Japanese Journal of Applied Physics, 60巻, SB号, pp. SBBF11-SBBF11, 202105
- Phonon properties of group IV materials for thermoelectric applications, 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, 20210408
- Effect of Growth Parameters on MoS2Film Quality Deposited by Low-Temperature MOCVD Using I-Pr2DADmo(CO)3and (t-C4H9)2S2, ECS Transactions, 104巻, 3号, pp. 3-15, 2021
- Evaluation of Mo(1-x)W xs Alloy Fabricated by Combinatorial Film Deposition, ECS Transactions, 104巻, 3号, pp. 21-28, 2021
- Strain evaluation in Ge and Sn implanted Si layers with laser and rapid thermal annealing, Materials Science in Semiconductor Processing, 120巻, pp. 105282-105282, 202012
- Origin of carrier lifetime degradation in floating-zone silicon during a high-temperature process for insulated gate bipolar transistor, Japanese Journal of Applied Physics, 59巻, 11号, pp. 115503-1-115503-6, 202011
- Evaluation of Thermal Conductivity Characteristics in Polycrystalline Silicon - The Effect of Nanostructure in the Grains, ECS Transactions, 98巻, 5号, pp. 437-446, 202009
- Evaluation of Silicon Nitride Film Formed by Atomic Layer Deposition on the Silicon Substrate with Trench Structure Using Angle-Resolved Hard X-ray Photoelectron Spectroscopy, ECS Transactions, 98巻, 3号, pp. 113-120, 202009
- Evaluation of Thermal Expansion Coefficient in Ge1-x Sn x Nanowire Using Reciprocal Space Mapping, ECS Transactions, 98巻, 5号, pp. 481-490, 202009
- Evaluation of Temperature and Germanium Concentration Dependence of EXAFS Oscillations in Si-Rich Silicon Germanium Thin Films, ECS Transactions, 98巻, 5号, pp. 473-479, 202009
- Observation of an Unidentified Phonon Peak in SiGe Alloys and Superlattices Using Molecular Dynamics Simulation, ECS Transactions, 98巻, 5号, pp. 533-546, 202009
- Evaluation of Strain-Shift Coefficients for SiSn by Raman Spectroscopy, ECS Transactions, 98巻, 5号, pp. 291-300, 202009
- Evaluation of Phonon Dispersion Relation for Bulk Silicon Germanium by Inelastic X-ray Scattering, ECS Transactions, 98巻, 5号, pp. 465-472, 202009
- Quantification of Ge fraction using local vibrational modes in Raman spectra of silicon germanium by oil-immersion Raman spectroscopy, Japanese Journal of Applied Physics, 59巻, 7号, pp. 075502-075502, 20200701
- Anomalous low energy phonon dispersion in bulk silicon-germanium observed by inelastic x-ray scattering, Applied Physics Letters, 116巻, 24号, pp. 242104-242104, 20200615
- Evaluation of Sawing Damage for Thin Flexible Silicon Solar Cells, Conference Record of the IEEE Photovoltaic Specialists Conference, 2020-June巻, pp. 0875-0880, 20200614
- Phonon dispersion of bulk Ge-rich SiGe: inelastic X-ray scattering studies, Japanese Journal of Applied Physics, 59巻, 6号, pp. 061003-1-061003-6, 202006
- Stress evaluation induced by wiggling silicon nitride fine pattern using Raman spectroscopy, Japanese Journal of Applied Physics, 59巻, SI号, pp. SIIF03-1-SIIF03-6, 202006
- Thermal conductivity characteristics in polycrystalline silicon with different average sizes of grain and nanostructures in the grains by UV Raman spectroscopy, Japanese Journal of Applied Physics, 59巻, 7号, pp. 075501-1-075501-7, 202005
- Anisotropic biaxial stress evaluation in metal-organic chemical vapor deposition grown Ge1-xSnx mesa structure by oil-immersion Raman spectroscopy, Thin Solid Films, 697巻, pp. 137797-1-137797-5, 202003
- Anisotropic Biaxial Strain Evaluation in Carbon-Doped Silicon Using Water-Immersion Raman Spectroscopy, ECS Transactions, 92巻, 4号, pp. 33-39, 201907
- Ultra-Thin Lightweight Bendable Crystalline Si Solar Cells for Solar Vehicles, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1131-1134, 201906
- Evaluation of thermal conductivity characteristics in Si nanowire covered with oxide by UV Raman spectroscopy, Japanese Journal of Applied Physics, 58巻, SD号, pp. SDDF04-1-SDDF04-5, 201906
- Evaluations of minority carrier lifetime in floating zone Si affected by Si insulated gate bipolar transistor processes, Japanese Journal of Applied Physics, 58巻, SB号, pp. SBBD07-1-SBBD07-6, 201904
- Determination of phonon deformation potentials and strain-shift coefficients in Ge-rich Si1-xGex using bulk Ge-rich Si1-xGex crystals and oil-immersion Raman spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS, 57巻, 10号, pp. 106601-1-106601-6, 201810
- Strain Evaluation of Laser-annealed SiGe Thin Layers, ECS Transactions, 86巻, 7号, pp. 59-65, 201809
- Determination of Phonon Deformation Potentials in Carbon-doped Silicon, ECS Transactions, 86巻, 7号, pp. 419-425, 201809
- Evaluation of Anisotropic Three-Dimensional Strain Relaxation in Stripe-Shaped Ge1-xSnx Mesa Structure, ECS Transactions, 86巻, 7号, pp. 329-336, 201809
- Evaluation of Laterally Graded Silicon Germanium Wires for Thermoelectric Devices Fabricated by Rapid Melting Growth, ECS Transactions, 86巻, 7号, pp. 87-93, 201809
- Evaluation of Anisotropic Biaxial Stress Induced Around Trench Gate of Si Power Transistor Using Water-Immersion Raman Spectroscopy, Journal of Electronic Materials, 47巻, pp. 1-6, 20180503
- Miniaturized planar Si-nanowire micro-thermoelectric generator using exuded thermal field for power generation, Science and Technology of Advanced Materials, 19巻, 1号, pp. 443-453, 201805
- Probing spatial heterogeneity in silicon thin films by Raman spectroscopy, Scientific Reports, 7巻, pp. 16549-1-16549-8, 201711
- Local anisotropic strain evaluation in thin Ge epitaxial film using SiGe stressor template grown on Ge substrate by selective ion implantation, Japanese Journal of Applied Physics, 56巻, 11号, pp. 110313-1-110313-4, 20171101
- Enhanced nickelidation rate in silicon nanowires with interfacial lattice disorder, Journal of Applied Physics, 122巻, 14号, pp. 144305-1-144305-7, 201710
- Evaluation of controlled strain in silicon nanowire by UV Raman spectroscopy, Japanese Journal of Applied Physics, 56巻, 6号, pp. 06GG10-1-06GG10-5, 20170601
- Biaxial stress evaluation in GeSn film epitaxially grown on Ge substrate by oil-immersion Raman spectroscopy, Japanese Journal of Applied Physics, 55巻, 9号, pp. 091301-1-091301-4, 20160901
- Origin of additional broad peaks in Raman spectra from thin germanium-rich silicon-germanium films, Applied Physics Express, 9巻, 7号, pp. 071301-1-071301-4, 20160701
- In-plane biaxial strain evaluation induced in Ge1-xSnx films using oil-immersion raman spectroscopy, ECS Transactions, 75巻, 8号, pp. 589-597, 2016
- Crystallinity evaluation of low temperature polycrystalline silicon thin film using UV/visible Raman spectroscopy, ECS Transactions, 72巻, 4号, pp. 249-255, 2016
- Evaluation of anisotropic biaxial stress in Si1-xGex/Ge mesa-structure by oil-immersion raman spectroscopy, ECS Transactions, 66巻, 4号, pp. 39-45, 2015
- On the origin of the gate oxide failure evaluated by Raman spectroscopy, ECS Transactions, 66巻, 4号, pp. 237-243, 2015
- Evaluation of Anisotropic Biaxial Stress in Thin Strained-SiGe Layer Using Surface Enhanced Raman Spectroscopy, ECS Transactions, 64巻, 6号, pp. 841-847, 201410
受賞
- 2024年12月, スポンサー賞(東レエンジニアリング賞), SEMICON JAPAN アカデミアAward 2024
- 2024年09月, 第56回(2024年春季)応用物理学会講演奨励賞, 応用物理学会
- 2020年12月, 講演奨励賞, 第四回フォノンエンジニアリング研究会
- 2020年06月
- 2020年02月, 研究会活性化奨励賞, 電子デバイス界面テクノロジー研究会-材料・プロセス・評価の物理-(第25回)
- 2019年01月, 研究会活性化奨励賞, 電子デバイス界面テクノロジー研究会-材料・プロセス・評価の物理-(第24回)
- 2017年03月, 大学院長賞, 明治大学大学院
- 2015年03月, 電気電子生命学科学業成績優秀賞, 明治大学
- 2013年04月, 神保賞, 明治大学
外部資金
競争的資金等の採択状況
- 科学研究費助成事業, 斜入射X線非弾性散乱法によるGeおよびSi表面・界面のフォノン散乱解明に関する研究, 2024年04月, 2027年03月
- 第14回 一般財団法人キヤノン財団 「新産業を生む科学技術」, 偏析と転写によるゲルマニウムナノシート/絶縁膜積層基板の創出, 2023年04月, 2026年03月
- 科学研究費助成事業 若手研究, 温度可変ラマン分光法によるSiGe混晶の微視的な熱伝導機構解明に関する研究, 2021年04月, 2024年03月
- 科学研究費助成事業 研究活動スタート支援, 温度可変放射光X線回折による熱電発電Siデバイスの局所領域熱特性評価に関する研究, 2020年09月, 2022年03月
- 科学研究費助成事業 特別研究員奨励費, ラマン分光オペランド測定による極微細熱電発電Siナノワイヤデバイスの熱伝導率評価, 2017年04月, 2020年03月