角屋 豊Yutaka Kadoya

Last Updated :2017/10/02

所属・職名
大学院先端物質科学研究科 量子物質科学講座 教授
メールアドレス
kdhiroshima-u.ac.jp

基本情報

主な職歴

  • 2004年04月01日, 広島大学大学院先端物質科学研究科教授, 大学院先端物質科学研究科, 広島大学教授
  • 2001年04月01日, 2004年03月31日, 広島大学大学院先端物質科学研究科助教授, 大学院先端物質科学研究科, 広島大学助教授
  • 1998年04月01日, 2001年03月31日, 広島大学工学部助教授, 工学部, 広島大学助教授
  • 1994年04月01日, 1998年03月31日, 広島大学工学部助手, 工学部, 広島大学助手

学位

  • 博士(工学) (東京大学)
  • 工学修士 (京都大学)

教育担当

  • 工学部:第二類(電気・電子・システム・情報系), 先端物質科学研究科:量子物質科学専攻, 先端物質科学研究科:量子物質科学専攻

研究分野

  • 総合理工 / ナノ・マイクロ科学 / ナノマイクロシステム
  • 総合理工 / 応用物理学 / 光工学・光量子科学
  • 総合理工 / 応用物理学 / 応用物理学一般
  • 工学 / 電気電子工学 / 電子デバイス・電子機器

研究キーワード

  • ナノ構造の光物性とデバイス
  • THz電磁波
  • 量子光学
  • 半導体
  • 分子線エピタキシ

所属学会

教育活動

授業担当

  1. 2017年, 学部専門, セメスター(後期), 光半導体素子工学
  2. 2017年, 学部専門, セメスター(後期), 光波工学
  3. 2017年, 修士課程・博士課程前期, セメスター(前期), 応用量子科学コースセミナー
  4. 2017年, 修士課程・博士課程前期, セメスター(後期), 応用量子科学コースセミナー
  5. 2017年, 修士課程・博士課程前期, セメスター(前期), 先端物質科学特別講義
  6. 2017年, 修士課程・博士課程前期, 年度, 量子物質科学特別研究Ⅰ
  7. 2017年, 修士課程・博士課程前期, 通年, 量子物質科学特別研究Ⅰ
  8. 2017年, 修士課程・博士課程前期, 年度, 量子物質科学特別研究Ⅰ
  9. 2017年, 修士課程・博士課程前期, 年度, 量子物質科学特別研究Ⅰ
  10. 2017年, 博士課程・博士課程後期, 年度, 量子物質科学特別研究II
  11. 2017年, 博士課程・博士課程後期, 年度, 量子物質科学特別研究II
  12. 2017年, 博士課程・博士課程後期, 通年, 量子物質科学特別研究II
  13. 2017年, 博士課程・博士課程後期, 年度, 量子物質科学特別研究II
  14. 2017年, 博士課程・博士課程後期, 年度, 量子物質科学特別研究II
  15. 2017年, 博士課程・博士課程後期, 年度, 量子物質科学特別研究II

研究活動

学術論文(★は代表的な論文)

  1. Multipole surface plasmons in metallic nanohole arrays, PHYSICAL REVIEW B, 91巻, 23号, pp.235406-1-pp.235406-10, JUN 5 2015
  2. Breaking Bullseye's Symmetry for Axial Field Focusing, JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES, 36巻, 5号, pp.455-pp.460, 20150501
  3. 1.5μm帯パルス光励起での低温成長GaAs光伝導アンテナによるテラヘルツ波検出, 応用物理, 83巻, 7号, pp.576-pp.579, 20140701
  4. Radiation pattern of plasmonic nano-antennas in a homogeneous medium, OPTICS EXPRESS, 22巻, 11号, pp.13263-pp.13268, 20140601
  5. Terahertz full horn-antenna characterization, APPLIED PHYSICS LETTERS, 102巻, 14号, pp.141115-1-pp.141115-3, 20130401
  6. Characterization of Terahertz Absorption in Clathrate Compound by Compact Spectroscopic Chip, JAPANESE JOURNAL OF APPLIED PHYSICS, 52巻, 2号, pp.028003-1-pp.028003-2, 20130201
  7. THz wave propagation in two-dimensional metallic photonic crystal with mechanically tunable photonic-bands, OPTICS EXPRESS, 20巻, 16号, pp.17271-pp.17280, 20120701
  8. Design of Two-Dimensional Low-Dielectric Photonic Crystal and Its Terahertz Waveguide Application, JAPANESE JOURNAL OF APPLIED PHYSICS, 51巻, 6号, pp.062201-1-pp.062201-5, 20120601
  9. Mechanical active control of surface plasmon properties, OPTICS EXPRESS, 20巻, 9号, pp.9523-pp.9534, 20120401
  10. Extraordinary carrier multiplication gated by a picosecond electric field pulse, NATURE COMMUNICATIONS, 2巻, pp.594-1-pp.594-6, 20111201
  11. THz Pulse Propagation on Microstrip Discontinuities, JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES, 32巻, 5号, pp.666-pp.672, 20110501
  12. Real-time terahertz near-field microscope, OPTICS EXPRESS, 19巻, 9号, pp.8277-pp.8284, 20110401
  13. Weak measurement of photon polarization by back-action-induced path interference, NEW JOURNAL OF PHYSICS, 13巻, 3号, pp.033041-1-pp.033041-11, 20110301
  14. 固定化したルシフェラーゼによる生物発光反応, 電気学会論文誌C(IEEJ Trans EIS), 131巻, 1号, pp.23-pp.28, 20110101
  15. Dynamical Franz-Keldysh effect in GaAs/AlGaAs multiple quantum wells induced by single-cycle terahertz pulses, APPLIED PHYSICS LETTERS, 97巻, 21号, pp.211902-1-pp.211902-3, 20101101
  16. Improved sensitivity of terahertz detection by GaAs photoconductive antennas excited at 1560 nm, APPLIED PHYSICS LETTERS, 97巻, 20号, pp.201110-1-pp.201110-3, 20101101
  17. Directional control of light by a nano-optical Yagi-Uda antenna, NATURE PHOTONICS, 4巻, 5号, pp.312-pp.315, 20100501
  18. Reconstruction of spatial qutrit states based on realistic measurement operators, PHYSICAL REVIEW A, 80巻, 6号, pp.062102-1-pp.062102-7, 20091201
  19. High-Sensitivity Detection of ATP Using Bioluminescence at an Optical Fiber End, ELECTRONICS AND COMMUNICATIONS IN JAPAN, 92巻, 9号, pp.53-pp.59, 20090901
  20. Measurement and control of spatial qubits generated by passing photons through double slits, PHYSICAL REVIEW A, 78巻, 1号, pp.012307-1-pp.012307-9, 20080701
  21. THz wave propagation on strip lines: Devices, properties, and applications, RADIOENGINEERING, 17巻, 2号, pp.48-pp.55, 20080601
  22. Propagation of terahertz pulses on coplanar strip-lines on low permittivity substrates and a spectroscopy application, APPLIED PHYSICS EXPRESS, 1巻, 1号, pp.012009-1-pp.012009-3, 20080101
  23. 光ファイバー先端での生物発光を利用した高感度ATP検出, 電気学会論文誌C, 10巻, 127号, pp.1498-pp.1503, 20071001
  24. Terahertz conductivity of localized photoinduced carriers in a Mott insulator YTiO3 at low excitation density, contrasted with the metallic nature in a band semiconductor Si, JOURNAL OF PHYSICS-CONDENSED MATTER, 19巻, 40号, pp.406224-1-pp.406224-12, 20071001
  25. Design parameters for a nano-optical Yagi-Uda antenna, NEW JOURNAL OF PHYSICS, 9巻, 7号, pp.217-1-pp.217-12, 20070701
  26. Terahertz wave emission and detection using photoconductive antennas made on low-temperature-grown InGaAs with 1.56 mu m pulse excitation, APPLIED PHYSICS LETTERS, 91巻, 1号, pp.011102-1-pp.011102-3, 20070701
  27. Detection of terahertz waves using low-temperature-grown InGaAs with 1.56 mu m pulse excitation, APPLIED PHYSICS LETTERS, 90巻, 10号, pp.101119-1-pp.101119-3, 20070501
  28. Terahertz time-domain spectroscopy of photoinduced carriers in YTiO3, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 310巻, 2号, pp.913-pp.915, 20070301
  29. Possible polaron effect in complex terahertz conductivity of electron-doped nanoporous crystal 12CaO center dot 7Al(2)O(3), JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 75巻, 8号, pp.084715-1-pp.084715-6, 20060801
  30. THz spectroscopic characterization of biomolecule/water systems by compact sensor chips, APPLIED PHYSICS LETTERS, 89巻, 4号, pp.041114-1-pp.041114-3, 20060701
  31. Micro-strip-line-based sensing chips for characterization of polar liquids in terahertz regime, APPLIED PHYSICS LETTERS, 88巻, 21号, pp.212511-1-pp.212511-3, 20060501
  32. Propagation characteristics of terahertz electrical signals on micro-strip lines made of optically transparent conductors, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 44巻, 32号, pp.L1011-pp.L1014, 20050801
  33. Terahertz wave detection performance of photoconductive antennas: Role of antenna structure and gate pulse intensity, JOURNAL OF APPLIED PHYSICS, 97巻, 10号, pp.103103-1-pp.103103-6, 20050501
  34. Observation of Jonscher law in ac hopping conduction of the electron-doped nanoporous crystal 12CaO center dot 7Al(2)O(3) in a THz frequency range, PHYSICAL REVIEW B, 70巻, 19号, pp.193104-1-pp.193104-4, 20041101
  35. Evaluation of carrier dynamics in n-AlxGa1-xAs films by terahertz time-domain spectroscopy with characteristic-matrix analysis, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43巻, 10号, pp.7320-pp.7321, 20041001
  36. Generation of extremely weak sub-Poissonian light using high-efficiency light-emitting diodes, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 43巻, 8B号, pp.L1114-pp.L1117, 20040801
  37. Low-frequency spectral enhancement of THz electromagnetic waves emitted from InAs surface with increased excitation intensity, JOURNAL OF APPLIED PHYSICS, 95巻, 4号, pp.2141-pp.2145, 20040201
  38. Broadband photon-number squeezing in light-emitting diodes at low photon-flux levels, APPLIED PHYSICS LETTERS, 83巻, 6号, pp.1113-pp.1115, 20030801
  39. Analysis of mutual communication between qubits by capacitive coupling, PHYSICAL REVIEW A, 67巻, 5号, pp.050301-1-pp.050301-4, 20030501
  40. Effect of static electric field on the beat structures in four-wave mixing signals from semiconductor microcavities, JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 71巻, 10号, pp.2384-pp.2387, 20021001
  41. Wideband sub-Poissonian light generation in light-emitting diodes incorporating a heavily-doped active region, APPLIED PHYSICS LETTERS, 81巻, 18号, pp.3317-pp.3319, 20021001
  42. Theory of photon-number squeezing in a heterojunction LED by the nonlinear backward pump process, PHYSICAL REVIEW B, 65巻, 16号, pp.165326-1-pp.165326-15, 20020401
  43. Photon-number squeezing by the nonlinear backward pump process in a constant-voltage heterojunction LED, PHYSICAL REVIEW B, 65巻, 16号, pp.165325-1-pp.165325-9, 20020401
  44. THz electromagnetic wave radiation from bulk semiconductor microcavities excited by short laser pulses, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 41巻, 3A号, pp.L256-pp.L259, 20020301
  45. Generation of heralded twin-photons in a series-coupled mesoscopic light-emitting diode system, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40巻, 2A号, pp.L85-pp.L88, 20010201
  46. Photon-number squeezing in a light-emitting diode driven by a constant-voltage source: Pump regulation by the non-coulombic effect, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 39巻, 11B号, pp.L1167-pp.L1170, 20001101
  47. Squeezing of photon-number fluctuations in the frequency range wider than 300 MHz in light-emitting diodes at room temperature, JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 17巻, 7号, pp.1257-pp.1262, 20000701
  48. Beating structure on the spectrally resolved four-wave mixing: Polarization dependence, JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 69巻, 7号, pp.2349-pp.2353, 20000701
  49. Beat structure in spectrally resolved four-wave mixing under crosslinear polarization in GaAs quantum wells, PHYSICA E, 7巻, 3-4号, pp.572-pp.575, 20000501
  50. 「サブポアソン光-光子数揺らぎへの挑戦」日本物理学会誌 Vol.55, No.3 (2000) pp.180-188., 55巻, 3号, pp.180-pp.188, 20000301
  51. THz electromagnetic wave radiation from semiconductor microcavities in nonperturbative regime, Physica B, 272巻, 1-4号, pp.467-pp.471, 19991201
  52. Influence of the backward-pump process on photon-number squeezing in a constant-current-driven heterojunction LED : Transition from thermionic emission to diffusion limits, Physical Review B, 60巻, 24号, pp.16686-pp.16700, 19990701
  53. THz electromagnetic wave radiation from coherent oscillation of exciton population in high-Q semiconductor microcavities, Applied Physics Letters, 74巻, 25号, pp.3839-pp.3841, 19990601
  54. Controlled spontaneous emissions from current-driven semiconductor microcavity triodes, Applied Physics Letters, 74巻, 9号, pp.1278-pp.1280, 19990301
  55. Wideband deep penetration of photon-number fluctuations into the quantum regime in series-coupled light-emitting diodes, Optics Letters, 24巻, 1号, pp.40-pp.42, 19990101
  56. Ultra clean etching of GaAs by HCl gas and in-situ overgrowth of (Al)GaAs by molecular beam epitaxy, Journal of Applied Physics, 83巻, 1号, pp.567-pp.576, 19980101
  57. Wide-band suppression of photon-number fluctuations in a high-speed light-emitting diode driven by a constant-current source, Applied Physics Letters, 72巻, 3号, pp.284-pp.286, 19980101
  58. Nonlinear optical responses of exciton-microcavity coupled system in weak and intermediate coupling regime, Journal of Luminescence, 72-74巻, pp.297-pp.299, 19970601
  59. Electron-and photon-manipulation in microcavities and practical applications, Superlattices and Microstructures, 22巻, 1号, pp.97-pp.107, 19970301
  60. Effect of oxygen incorporation at AlGaAs/GaAs interfaces on the electrical properties of two-dimensional electron gas, Applied Physics Letters, 70巻, 5号, pp.595-pp.597, 19970201
  61. Influence of Photon Reabsorption on the Transfer Efficiency of Output Intensity in Semiconductor Microcavities, IEEE Photonics Technol. Lett., 9巻, 2号, pp.179-pp.181, 19970201
  62. Coherent Control of Terahertz Generation in a DC-Biased Semiconductor Microcavity, IEEE Journal of Selected Topics in Quantum Electronics, 2巻, 3号, pp.720-pp.723, 19960901
  63. Electronic States in Edge Quantum Wires on GaAs/AlGaAs Facet Structures, Japanese Journal of Applied Physics, 35巻, 3号, pp.1886-pp.1889, 19960301
  64. Oscillator strength dependence of cavity-polariton mode splitting in semiconductor microcavities, Applied Physics Letters, 68巻, 3号, pp.281-pp.283, 19960101
  65. Transport properties of two-dimensional electron gas in AlGaAs/GaAs selectively doped heterojunctions with embedded InAs quantum dots, Applied Physics Letters, 67巻, 23号, pp.3444-pp.3446, 19951201
  66. Effect of intense intersubband optical excitation on the electron distribution in GaAs/AlAs quantum wells, Japanese Journal of Applied Physics, 34巻, 11号, pp.5989-pp.5992, 19951101
  67. Fabrication of 10-Nanometer-scale GaAs Dot Structures by In Situ Selective Gas Etching with Self-Assembled InAs Dots as a Mask, Japanese Journal of Applied Physics, 34巻, 9B号, pp.L1198-pp.L1201, 19950901
  68. Self-formation of 100 nm scale wire structures during molecular beam epitaxial growth of AlGaAs on patterned substrates, Journal of Crystal Growth, 150巻, 1-4号, pp.317-pp.321, 19950501
  69. Effect of Ionized Impurities at Heterointerface on Concentration and Mobility of Two-Dimensional Electrons in Selectively Doped Heterojunction Structures, Japanese Journal of Applied Physics, 33巻, 9A号, pp.4859-pp.4862, 19940901
  70. Control of electron population by intersubband optical excitation in potential-inserted double quantum well structures, Applied Physics Letters, 65巻, 4号, pp.424-pp.426, 19940701
  71. Ultrahigh-Vacuum In-Situ Patterning and MBE Overgrowth of GaAs and AlGaAs Using an InAs Mask Layer, Nanostructures and Quantum Effects= Springer-Verlag, pp.189-pp.193, 19940401
  72. Quantitative study of oxygen incorporation on MBE-grown AlAs surfaces during growth interruption and its effect on nonradiative recombination in GaAs/AlAs quantum wells, Institute of Physics Conference Series No. 136= IOP Publishing. Ltd., pp.517-pp.522, 19940401
  73. Oxygen incorporation in GaAs/AlGaAs interfaces grown by molecular beam epitaxy, CONTROL OF SEMICONDUCTOR INTERFACE= Elsevier Science B. V., pp.93-pp.96, 19940401
  74. Etching of InAs in HCl Gas and Selective Removal of InAs Layer on GaAs in Ultrahigh-Vacuum Processing System, Japanese Journal of Applied Physics, 32巻, 10B号, pp.L1496-L1499, 19931001
  75. Detection of oxygen incorporated in molecular-beam epitaxy grown GaAs-on-AlAs interfaces and AlAs layers by secondary ion mass spectrometry, Applied Physics Letters, 63巻, 14号, pp.1924-pp.1926, 19931001
  76. Electron beam-enhanced etching of InAs in Cl2 gas and novel in situ patterning of GaAs with an InAs mask layer, Applied Physics Letters, 63巻, 13号, pp.1789-pp.1791, 19930901
  77. Formation of high mobility two-dimensional electron gas at etch-regrown AlGaAs/GaAs interface prepared by chlorine gas etching and MBE in an UHV multichamber system, Journal of Crystal Growth, 127巻, 1-4号, pp.877-pp.880, 19930401
  78. Incorporation of silicon during MBE growth of GaAs on(111)A substrates, Journal of Crystal Growth, 127巻, 1-4号, pp.871-pp.876, 19930401
  79. Molecular-beam-epitaxial growth of n-AlGaAs on clean Cl2-gas etched GaAs surfaces and the formation of high mobility two-dimensional electron gas at the etch-regrown interfaces, Applied Physics Letters, 61巻, 14号, pp.1658-pp.1660, 19921001
  80. Electrical properties and dopant incorporation mechanisms of Si doped GaAs and (AlGa) As grown on (111) A GaAs surfaces by MBE, Journal of Crystal Growth, 111巻, 1-4号, pp.280-pp.283, 19910601
  81. Crystal structure of low-temperature-grownIn0.45Ga0.55As on anInPsubstrate, Journal of Crystal Growth, 425巻, pp.99-pp.101, 20150601
  82. InP基板上低温成長InxGa1-xAsの結晶構造の成長温度およびアニール温度依存性, 日本材料学会誌『材料』, 64巻, 9号, pp.696-pp.700, 20150901
  83. Effect of thermal annealing on the crystallization of low-temperature-grown In0.42Ga0.58As on InP substrate, JAPANESE JOURNAL OF APPLIED PHYSICS, 55巻, 11号, NOV 2016
  84. Estimation of the Number of Quantum Dots Immobilized on an Ultra-flat Au Surface, NANOSCALE RESEARCH LETTERS, 12巻, APR 26 2017
  85. Light-induced electron localization in a quantum Hall system, Nature Physics, 13巻, 7号, pp.688-pp.692

著書等出版物

  1. 2007年11月, テラヘルツ技術総覧 , NGTコーポレーション, 2007年, 11, 単行本(学術書), 共編著, 9784990371302, 700
  2. 1998年09月, OPTICAL PROPERTIES OF LOW-DIMENSIONAL MATERIALS II , Confinement95= World Scientific Publishing, 1998年, 09, 単行本(学術書), 共編著
  3. 2005年06月, Terahertz Optoelectronics , Springer Verlag, 2005年, 06, 単行本(学術書), 共編著, kazuhiko hirakawa , 387
  4. 2006年11月, 光学実務資料集 , 情報機構, 2006年, 11, 単行本(一般書), 共編著, 559