Yutaka Kadoya

Last Updated :2017/11/01

Affiliations, Positions
Graduate School of Advanced Sciences of Matter, ., Professor
E-mail
kdhiroshima-u.ac.jp

Basic Information

Major Professional Backgrounds

  • 2004/04/01, "Professor、 Graduate School of Advanced Sciences of Matter、 Hiroshima University", ADSM, Prof.
  • 2001/04/01, 2004/03/31, "Associate Professor、 Graduate School of Advanced Sciences of Matter、 Hiroshima University", ADSM, Ass. Prof.
  • 1998/04/01, 2001/03/31, "Associate Professor、 Faculty of Engineering、 Hiroshima University", Eng., Ass. Prof.
  • 1994/04/01, 1998/03/31, "Reseach Associate、 Faculty of Engineering、 Hiroshima University", Eng., Res. Ass.

Academic Degrees

  • Doctor of Engineering, The University of Tokyo
  • Master of Engineering, Kyoto University

Research Fields

  • Interdisciplinary science and engineering;Nano / Micro science;Nano / Microsystems
  • Interdisciplinary science and engineering;Applied physics;Optical engineering, Photon science
  • Interdisciplinary science and engineering;Applied physics;General applied physics
  • Engineering;Electrical and electronic engineering;Electron device / Electronic equipment

Research Keywords

  • Optics in nano structures and related devices
  • THz electromagnetic wave
  • quantum optics
  • Semiconductor
  • Molecular Beam Epitaxy

Affiliated Academic Societies

Educational Activity

Course in Charge

  1. 2017, Undergraduate Education, Second Semester, Optoelectronic Semiconductor Devices
  2. 2017, Undergraduate Education, Second Semester, Lightwave Engineering
  3. 2017, Graduate Education (Master's Program) , Academic Year, Advanced Study in Quantum Matter I
  4. 2017, Graduate Education (Master's Program) , First Semester, Special Lecture on Advanced Sciences of Matter
  5. 2017, Graduate Education (Master's Program) , First Semester, Seminar on Applied Quantum Sciences
  6. 2017, Graduate Education (Master's Program) , Second Semester, Seminar on Applied Quantum Sciences
  7. 2017, Graduate Education (Master's Program) , Year, Advanced Study in Quantum Matter I
  8. 2017, Graduate Education (Master's Program) , Academic Year, Advanced Study in Quantum Matter I
  9. 2017, Graduate Education (Master's Program) , Academic Year, Advanced Study in Quantum Matter I
  10. 2017, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Quantum MatterII
  11. 2017, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Quantum MatterII
  12. 2017, Graduate Education (Doctoral Program) , Year, Advanced Study in Quantum MatterII
  13. 2017, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Quantum MatterII
  14. 2017, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Quantum MatterII
  15. 2017, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Quantum MatterII

Research Activities

Academic Papers

  1. Multipole surface plasmons in metallic nanohole arrays, PHYSICAL REVIEW B, 91(23), 235406-1-235406-10, JUN 5 2015
  2. Breaking Bullseye's Symmetry for Axial Field Focusing, JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES, 36(5), 455-460, 20150501
  3. Radiation pattern of plasmonic nano-antennas in a homogeneous medium, OPTICS EXPRESS, 22(11), 13263-13268, 20140601
  4. Terahertz full horn-antenna characterization, APPLIED PHYSICS LETTERS, 102(14), 141115-1-141115-3, 20130401
  5. Characterization of Terahertz Absorption in Clathrate Compound by Compact Spectroscopic Chip, JAPANESE JOURNAL OF APPLIED PHYSICS, 52(2), 028003-1-028003-2, 20130201
  6. THz wave propagation in two-dimensional metallic photonic crystal with mechanically tunable photonic-bands, OPTICS EXPRESS, 20(16), 17271-17280, 20120701
  7. Design of Two-Dimensional Low-Dielectric Photonic Crystal and Its Terahertz Waveguide Application, JAPANESE JOURNAL OF APPLIED PHYSICS, 51(6), 062201-1-062201-5, 20120601
  8. Mechanical active control of surface plasmon properties, OPTICS EXPRESS, 20(9), 9523-9534, 20120401
  9. Extraordinary carrier multiplication gated by a picosecond electric field pulse, NATURE COMMUNICATIONS, 2, 594-1-594-6, 20111201
  10. THz Pulse Propagation on Microstrip Discontinuities, JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES, 32(5), 666-672, 20110501
  11. Real-time terahertz near-field microscope, OPTICS EXPRESS, 19(9), 8277-8284, 20110401
  12. Weak measurement of photon polarization by back-action-induced path interference, NEW JOURNAL OF PHYSICS, 13(3), 033041-1-033041-11, 20110301
  13. Dynamical Franz-Keldysh effect in GaAs/AlGaAs multiple quantum wells induced by single-cycle terahertz pulses, APPLIED PHYSICS LETTERS, 97(21), 211902-1-211902-3, 20101101
  14. Improved sensitivity of terahertz detection by GaAs photoconductive antennas excited at 1560 nm, APPLIED PHYSICS LETTERS, 97(20), 201110-1-201110-3, 20101101
  15. Directional control of light by a nano-optical Yagi-Uda antenna, NATURE PHOTONICS, 4(5), 312-315, 20100501
  16. Reconstruction of spatial qutrit states based on realistic measurement operators, PHYSICAL REVIEW A, 80(6), 062102-1-062102-7, 20091201
  17. High-Sensitivity Detection of ATP Using Bioluminescence at an Optical Fiber End, ELECTRONICS AND COMMUNICATIONS IN JAPAN, 92(9), 53-59, 20090901
  18. Measurement and control of spatial qubits generated by passing photons through double slits, PHYSICAL REVIEW A, 78(1), 012307-1-012307-9, 20080701
  19. THz wave propagation on strip lines: Devices, properties, and applications, RADIOENGINEERING, 17(2), 48-55, 20080601
  20. Propagation of terahertz pulses on coplanar strip-lines on low permittivity substrates and a spectroscopy application, APPLIED PHYSICS EXPRESS, 1(1), 012009-1-012009-3, 20080101
  21. High Sensitivity Detection of ATP using Bioluminescence at an Optical Fiber End, Trans. IEEE of Japan, 10(127), 1498-1503, 20071001
  22. Terahertz conductivity of localized photoinduced carriers in a Mott insulator YTiO3 at low excitation density, contrasted with the metallic nature in a band semiconductor Si, JOURNAL OF PHYSICS-CONDENSED MATTER, 19(40), 406224-1-406224-12, 20071001
  23. Design parameters for a nano-optical Yagi-Uda antenna, NEW JOURNAL OF PHYSICS, 9(7), 217-1-217-12, 20070701
  24. Terahertz wave emission and detection using photoconductive antennas made on low-temperature-grown InGaAs with 1.56 mu m pulse excitation, APPLIED PHYSICS LETTERS, 91(1), 011102-1-011102-3, 20070701
  25. Detection of terahertz waves using low-temperature-grown InGaAs with 1.56 mu m pulse excitation, APPLIED PHYSICS LETTERS, 90(10), 101119-1-101119-3, 20070501
  26. Terahertz time-domain spectroscopy of photoinduced carriers in YTiO3, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 310(2), 913-915, 20070301
  27. Possible polaron effect in complex terahertz conductivity of electron-doped nanoporous crystal 12CaO center dot 7Al(2)O(3), JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 75(8), 084715-1-084715-6, 20060801
  28. THz spectroscopic characterization of biomolecule/water systems by compact sensor chips, APPLIED PHYSICS LETTERS, 89(4), 041114-1-041114-3, 20060701
  29. Micro-strip-line-based sensing chips for characterization of polar liquids in terahertz regime, APPLIED PHYSICS LETTERS, 88(21), 212511-1-212511-3, 20060501
  30. Propagation characteristics of terahertz electrical signals on micro-strip lines made of optically transparent conductors, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 44(32), L1011-L1014, 20050801
  31. Terahertz wave detection performance of photoconductive antennas: Role of antenna structure and gate pulse intensity, JOURNAL OF APPLIED PHYSICS, 97(10), 103103-1-103103-6, 20050501
  32. Observation of Jonscher law in ac hopping conduction of the electron-doped nanoporous crystal 12CaO center dot 7Al(2)O(3) in a THz frequency range, PHYSICAL REVIEW B, 70(19), 193104-1-193104-4, 20041101
  33. Evaluation of carrier dynamics in n-AlxGa1-xAs films by terahertz time-domain spectroscopy with characteristic-matrix analysis, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(10), 7320-7321, 20041001
  34. Generation of extremely weak sub-Poissonian light using high-efficiency light-emitting diodes, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 43(8B), L1114-L1117, 20040801
  35. Low-frequency spectral enhancement of THz electromagnetic waves emitted from InAs surface with increased excitation intensity, JOURNAL OF APPLIED PHYSICS, 95(4), 2141-2145, 20040201
  36. Broadband photon-number squeezing in light-emitting diodes at low photon-flux levels, APPLIED PHYSICS LETTERS, 83(6), 1113-1115, 20030801
  37. Analysis of mutual communication between qubits by capacitive coupling, PHYSICAL REVIEW A, 67(5), 050301-1-050301-4, 20030501
  38. Effect of static electric field on the beat structures in four-wave mixing signals from semiconductor microcavities, JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 71(10), 2384-2387, 20021001
  39. Wideband sub-Poissonian light generation in light-emitting diodes incorporating a heavily-doped active region, APPLIED PHYSICS LETTERS, 81(18), 3317-3319, 20021001
  40. Theory of photon-number squeezing in a heterojunction LED by the nonlinear backward pump process, PHYSICAL REVIEW B, 65(16), 165326-1-165326-15, 20020401
  41. Photon-number squeezing by the nonlinear backward pump process in a constant-voltage heterojunction LED, PHYSICAL REVIEW B, 65(16), 165325-1-165325-9, 20020401
  42. THz electromagnetic wave radiation from bulk semiconductor microcavities excited by short laser pulses, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 41(3A), L256-L259, 20020301
  43. Generation of heralded twin-photons in a series-coupled mesoscopic light-emitting diode system, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(2A), L85-L88, 20010201
  44. Photon-number squeezing in a light-emitting diode driven by a constant-voltage source: Pump regulation by the non-coulombic effect, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 39(11B), L1167-L1170, 20001101
  45. Squeezing of photon-number fluctuations in the frequency range wider than 300 MHz in light-emitting diodes at room temperature, JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 17(7), 1257-1262, 20000701
  46. Beating structure on the spectrally resolved four-wave mixing: Polarization dependence, JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 69(7), 2349-2353, 20000701
  47. Beat structure in spectrally resolved four-wave mixing under crosslinear polarization in GaAs quantum wells, PHYSICA E, 7(3-4), 572-575, 20000501
  48. THz electromagnetic wave radiation from semiconductor microcavities in nonperturbative regime, Physica B, 272(1-4), 467-471, 19991201
  49. Influence of the backward-pump process on photon-number squeezing in a constant-current-driven heterojunction LED : Transition from thermionic emission to diffusion limits, Physical Review B, 60(24), 16686-16700, 19990701
  50. THz electromagnetic wave radiation from coherent oscillation of exciton population in high-Q semiconductor microcavities, Applied Physics Letters, 74(25), 3839-3841, 19990601
  51. Controlled spontaneous emissions from current-driven semiconductor microcavity triodes, Applied Physics Letters, 74(9), 1278-1280, 19990301
  52. Wideband deep penetration of photon-number fluctuations into the quantum regime in series-coupled light-emitting diodes, Optics Letters, 24(1), 40-42, 19990101
  53. Ultra clean etching of GaAs by HCl gas and in-situ overgrowth of (Al)GaAs by molecular beam epitaxy, Journal of Applied Physics, 83(1), 567-576, 19980101
  54. Wide-band suppression of photon-number fluctuations in a high-speed light-emitting diode driven by a constant-current source, Applied Physics Letters, 72(3), 284-286, 19980101
  55. Nonlinear optical responses of exciton-microcavity coupled system in weak and intermediate coupling regime, Journal of Luminescence, 72-74, 297-299, 19970601
  56. Electron-and photon-manipulation in microcavities and practical applications, Superlattices and Microstructures, 22(1), 97-107, 19970301
  57. Effect of oxygen incorporation at AlGaAs/GaAs interfaces on the electrical properties of two-dimensional electron gas, Applied Physics Letters, 70(5), 595-597, 19970201
  58. Influence of Photon Reabsorption on the Transfer Efficiency of Output Intensity in Semiconductor Microcavities, IEEE Photonics Technol. Lett., 9(2), 179-181, 19970201
  59. Coherent Control of Terahertz Generation in a DC-Biased Semiconductor Microcavity, IEEE Journal of Selected Topics in Quantum Electronics, 2(3), 720-723, 19960901
  60. Electronic States in Edge Quantum Wires on GaAs/AlGaAs Facet Structures, Japanese Journal of Applied Physics, 35(3), 1886-1889, 19960301
  61. Oscillator strength dependence of cavity-polariton mode splitting in semiconductor microcavities, Applied Physics Letters, 68(3), 281-283, 19960101
  62. Transport properties of two-dimensional electron gas in AlGaAs/GaAs selectively doped heterojunctions with embedded InAs quantum dots, Applied Physics Letters, 67(23), 3444-3446, 19951201
  63. Effect of intense intersubband optical excitation on the electron distribution in GaAs/AlAs quantum wells, Japanese Journal of Applied Physics, 34(11), 5989-5992, 19951101
  64. Fabrication of 10-Nanometer-scale GaAs Dot Structures by In Situ Selective Gas Etching with Self-Assembled InAs Dots as a Mask, Japanese Journal of Applied Physics, 34(9B), L1198-L1201, 19950901
  65. Self-formation of 100 nm scale wire structures during molecular beam epitaxial growth of AlGaAs on patterned substrates, Journal of Crystal Growth, 150(1-4), 317-321, 19950501
  66. Effect of Ionized Impurities at Heterointerface on Concentration and Mobility of Two-Dimensional Electrons in Selectively Doped Heterojunction Structures, Japanese Journal of Applied Physics, 33(9A), 4859-4862, 19940901
  67. Control of electron population by intersubband optical excitation in potential-inserted double quantum well structures, Applied Physics Letters, 65(4), 424-426, 19940701
  68. Ultrahigh-Vacuum In-Situ Patterning and MBE Overgrowth of GaAs and AlGaAs Using an InAs Mask Layer, Nanostructures and Quantum Effects= Springer-Verlag, 189-193, 19940401
  69. Quantitative study of oxygen incorporation on MBE-grown AlAs surfaces during growth interruption and its effect on nonradiative recombination in GaAs/AlAs quantum wells, Institute of Physics Conference Series No. 136= IOP Publishing. Ltd., 517-522, 19940401
  70. Oxygen incorporation in GaAs/AlGaAs interfaces grown by molecular beam epitaxy, CONTROL OF SEMICONDUCTOR INTERFACE= Elsevier Science B. V., 93-96, 19940401
  71. Etching of InAs in HCl Gas and Selective Removal of InAs Layer on GaAs in Ultrahigh-Vacuum Processing System, Japanese Journal of Applied Physics, 32(10B), L1496-L1499, 19931001
  72. Detection of oxygen incorporated in molecular-beam epitaxy grown GaAs-on-AlAs interfaces and AlAs layers by secondary ion mass spectrometry, Applied Physics Letters, 63(14), 1924-1926, 19931001
  73. Electron beam-enhanced etching of InAs in Cl2 gas and novel in situ patterning of GaAs with an InAs mask layer, Applied Physics Letters, 63(13), 1789-1791, 19930901
  74. Formation of high mobility two-dimensional electron gas at etch-regrown AlGaAs/GaAs interface prepared by chlorine gas etching and MBE in an UHV multichamber system, Journal of Crystal Growth, 127(1-4), 877-880, 19930401
  75. Incorporation of silicon during MBE growth of GaAs on(111)A substrates, Journal of Crystal Growth, 127(1-4), 871-876, 19930401
  76. Molecular-beam-epitaxial growth of n-AlGaAs on clean Cl2-gas etched GaAs surfaces and the formation of high mobility two-dimensional electron gas at the etch-regrown interfaces, Applied Physics Letters, 61(14), 1658-1660, 19921001
  77. Electrical properties and dopant incorporation mechanisms of Si doped GaAs and (AlGa) As grown on (111) A GaAs surfaces by MBE, Journal of Crystal Growth, 111(1-4), 280-283, 19910601
  78. Crystalstructureoflow-temperature-grownIn0.45Ga0.55As on anInPsubstrate, Journal of Crystal Growth, 425, 99-101, 20150601
  79. Effect of thermal annealing on the crystallization of low-temperature-grown In0.42Ga0.58As on InP substrate, JAPANESE JOURNAL OF APPLIED PHYSICS, 55(11), NOV 2016
  80. Estimation of the Number of Quantum Dots Immobilized on an Ultra-flat Au Surface, NANOSCALE RESEARCH LETTERS, 12, APR 26 2017
  81. Light-induced electron localization in a quantum Hall system, Nature Physics, 13(7), 688-692

Publications such as books

  1. 1998/09, OPTICAL PROPERTIES OF LOW-DIMENSIONAL MATERIALS II , Confinement95= World Scientific Publishing, 1998, 09
  2. 2005/06, Terahertz Optoelectronics , Springer Verlag, 2005, 06, 387