Hiroyuki Sakaue
Last Updated :2025/04/03
- Affiliations, Positions
- Graduate School of Advanced Science and Engineering, Assistant Professor
- E-mail
- hsakaue
hiroshima-u.ac.jp
- Other Contact Details
- 1-3-1 Kagamiyama, Higashi-Hiroshima, Japan
TEL : (+81)82-424-7683 FAX : (+81)
- Self-introduction
- We investigate the metal nanoparticles for semiconductor devices.
Basic Information
Major Professional Backgrounds
- 2001/04/01, 2020/03/31, Hiroshima University, Graduate School of Advanced Sciences and Matter, Assistant Professor
- 1989/10/01, 2001/03/31, Hiroshima University, Faculty of Engineering, Research Associate
Educational Backgrounds
- Hiroshima University, Graduate School of Engineering, Japan, 1987/04, 1989/03
- Hiroshima University, Faculty of Engineering, Japan, 1983/04, 1987/03
Academic Degrees
- Doctor of Engineering, Hiroshima University
- Master of Engineering, Hiroshima University
Educational Activity
- [Bachelor Degree Program] School of Engineering : Cluster 2(Electrical, Electronic and Systems Engineering) : Program of Electronic Devices and Systems
- [Master's Program] Graduate School of Advanced Science and Engineering : Division of Advanced Science and Engineering : Quantum Matter Program
- [Doctoral Program] Graduate School of Advanced Science and Engineering : Division of Advanced Science and Engineering : Quantum Matter Program
Research Fields
- Engineering;Electrical and electronic engineering;Electronic materials / Electric materials
Research Keywords
- Surface Reaction
- self-organization
- semiconducor surface
- wet treatment
- photovoltaic device
- Matal nano-particle
Affiliated Academic Societies
- The Japan Society of Applied Physics, 1998
- The Surface Science Society of Japan, 2001
Educational Activity
Course in Charge
- 2025, Undergraduate Education, First Semester, Experiments in Electrical Engineering Electronics and System Engineering I
- 2025, Undergraduate Education, First Semester, Experiments in Electrical Engineering Electronics and System Engineering I
- 2025, Undergraduate Education, Second Semester, Experiments in Electrical Engineering Electronics and System Engineering II
- 2025, Undergraduate Education, Second Semester, Experiments in Electrical Engineering Electronics and System Engineering II
- 2025, Undergraduate Education, First Semester, Basic Experiments in Electrical Engineering I
- 2025, Undergraduate Education, First Semester, Basic Experiments in Electrical Engineering I
- 2025, Undergraduate Education, Second Semester, Basic Experiments in Electrical Engineering II
- 2025, Undergraduate Education, Second Semester, Basic Experiments in Electrical Engineering II
- 2025, Undergraduate Education, Year, Graduation Thesis
- 2025, Graduate Education (Master's Program) , First Semester, Seminar on Electronics A
- 2025, Graduate Education (Master's Program) , Second Semester, Seminar on Electronics B
- 2025, Graduate Education (Master's Program) , Academic Year, Academic Presentation in Electronics
- 2025, Graduate Education (Master's Program) , 1Term, Exercises in Electronics A
- 2025, Graduate Education (Master's Program) , 2Term, Exercises in Electronics A
- 2025, Graduate Education (Master's Program) , 3Term, Exercises in Electronics B
- 2025, Graduate Education (Master's Program) , 4Term, Exercises in Electronics B
- 2025, Graduate Education (Master's Program) , Academic Year, Advanced Study in Quantum Matter
Research Activities
Academic Papers
- Chemical Structural Analysis of Diamondlike Carbon Films with Different Electrical Resistivities by X-ray Photoelectron Spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(5), 3376-3379, 200812
- Annealing effect on the chemical structure of diamondlike carbon, JOURNAL OF APPLIED PHYSICS, 104(4), 20080815
- Direct fabrication of nanopores in a metal foil using focused ion beam with in situ measurements of the penetrating ion beam current, REVIEW OF SCIENTIFIC INSTRUMENTS, 80(12), 200912
- Flipping Behavior of a Porphyrin Derivative Molecule on a Au(111) Reconstructed Surface, JOURNAL OF PHYSICAL CHEMISTRY C, 115(25), 12414-12418, 20110630
- Flipping Behavior of a Porphyrin Derivative Molecule on a Au(111) Reconstructed Surface, JOURNAL OF PHYSICAL CHEMISTRY C, 115(25), 12414-12418, 20110630
- Simple Method of Synthesizing Nickel-Nitrilotriacetic Acid Gold Nanoparticles with a Narrow Size Distribution for Protein Labeling, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(9), 201109
- Simple Method of Synthesizing Nickel-Nitrilotriacetic Acid Gold Nanoparticles with a Narrow Size Distribution for Protein Labeling, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(9), 201109
- Climbing Rates of Microtubules Propelled by Dynein after Collision with Microfabricated Walls, JAPANESE JOURNAL OF APPLIED PHYSICS, 51(2), 201202
- Digital Chemical Vapor Deposition of SiO2 Using a Repetitive Reaction of Triethylsilane/Hydrogen and Oxidation, Jpn. J. Appl. Phys., 30, L124-L127, 19910401
- Si Etching Employing Steady-State Magnetron Plasma with Magnet at Anode Centered in Cylindrical Reactor, Jpn. J. Appl. Phys., 31(12B), 4338-4342, 19921201
- Aluminum-Selective Chemical Vapor Deposition Induced by Hydrogen Desorption on Silicon, Jpn. J. Appl. Phys., 35(2B), 1010-1013, 19960201
- Excimer Laser Induced Pattern Projection Etching of Aluminum, Symp. on Dry Process, 19880401
- Digital Etching of Silicon, 1990 3rd Micro Process Conf., 19900401
- Study on Reaction Mechanism of Al Selective CVD with in-situ XPS Measurement, 1990 3rd Micro Process Conf., 19900401
- Conformable CVD of SiO_2_ into Deep Trench Using the Digral Method, 22nd (1990 International) Conf. on Solid State Devices and Materials, 19900401
- Conformal Chemical Vapor Deposition of Insulator Films Employig Digital Method, Symp. on Dry Process, 19900401
- In-situ X-ray Photoelectron Spectrocopy Observation on Reactive Etched Surface of Indium-Tin Oxide Film Employing Alcohol Gas, Symp. on Dry Process, 19910401
- Diagnostic of Hydrogen Role on Si Surface Reaction processes Employing in-situ FTIR-ATR, 1991 4th International Microprocess Conf., 19910701
- Excimer Laser Enhanced Reactive Ion Etching, 19920401
- Si Etching Employing Steady-State Magnetron Plasma with Magnet at Anode Centered in Cylindrical Reactor, 5th International MicroProcess Conf., 19920401
- Digital CVD of Si Oxide/Nitride and Study on its Surface Reaction, Mat. Res. Soc. Fall Meeting, 19920401
- Spontaneous Etching of SiO_2_ Employing Downstream Plasma, 183rd Meeting of Electrochem. Soc., 19930401
- Reflective Absorption Spectroscopy of Reaction Process of Silicon Surface with Fluorine Radicals, 7th Intern. MicroProcess Conf., 19940701
- Low Energy Bias Sputtering Filling of SiO2 into High Aspect Ratio Trench Employing Axially Confined Helicon Wave Plasma, 1994 International Conf. on Solid State Devices and Materials, 643-645, 19940801
- Study of Fluorination Process of H-terminated Si Surface by Xenon Fluoride Exposure, The 8th Intern. MicroProcess Conf., 172-173, 19950701
- Al-Selective CVD Induced by Hydrogen Desorption on Si, 1995 International Conf. on Solid State Devices and Materials, 926-928, 19950801
- Highly Selective SiO2 Etching Using CF4/C2H4, Jpn. J. Appl. Phys., 36(4B), 2477-2481, 19970401
- Scanning Tunneling Microscopy Observation on the Atomic structures of Step Edges and Etch Pits on NH4F-Treated Si(111) Surface, 1996 International Conf. on Solid State Devices and Materials, 392-394, 19960801
- Highly Selective SiO2 Etching Using CF4/C2H4, Proc. of Symp. on Dry Process, 141-146, 19961101
- Al Nano-Structure Formation using Selective Reactivity of Step/Terrace Structure of Hydrogen-terminated Si(111) Surface, 4th International Symp. on Atomically Controlled Surfaces and Interfaces, 345, 19971001
- Self-Organization of Periodic Step/Terrace Structure on Hydrogen-Terminated Si Surface, JRCAT International Workshop on Science and Technology of Hydrogen-Terminated Silicon Surfaces, 11-12, 19971101
- Wafer-Scale Self-Organization of Periodic Step/Terrace Structure on Hydrogen-Terminated Si Surface, 1998 International Conf.on Solid State Devices and Materials, 434-435, 19980901
- Perfect Control of Hydrogen-Terminated Silicon Wafer Surface, Proc.of 9th International Conference on Production Engineering, 871-876, 19990901
- Low Dielectric Constant Porous Diamond Film Composed of Diamond Nano-Particles, Abstracts of Advanced Metallization Conf. US Session(AMC2000), 85-86, 20001001
- Low Dielectric Constant Porous Diamond Film Composed of Diamond Nano-Particles, Abstracts of Advanced Metallization Conf. Asian Session(ADMATA2000), 175-176, 20001001
- Laser-Induced Pattern Projection Etching of Aluminum, Symp. on Dry Process (Tokyo= Nov. 1-2= 1990), pp. 187 - 190, 19881001
- Digital Chemical Vapor Deposition and Etching Technologies for Semiconductor Processing, J. Vac. Sci. Technol. A, 8, pp.1844-1850, 19900401
- Fabrication and Evaluation of Three-Dimensional Optically-Coupled Common Memory, 1994 International Conf. on Solid State Devices and Materials, 965-966, 19940801
- GaAs/Si Optoelectronic Design and Development at Hiroshima University, Semiconductor Characterization, 599-604, 19960401
- Fabrication and Evaluation of Three-Dimensional Optically-Coupled Common Memory, Jpn. J. Appl. Phys., 34(2B), 1246-1248, 19950401
- GaAs/Si Optoelectronic Design and Development at Hiroshima Universit, Proc. Intern. Workshop of Semicon. Character.(Gaithersburg= USA), 599-604, 19950401
- Fabrication and Evaluation of Three-Dimensional Optically-Coupled Common Memory, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 965-966, 19940401
- Digital Chemical Vapor Deposition and Etching Technologies for Semiconductor Processing, J. Vac. Sci. Technol. A, 8(3), 1844-1850, 19900301
- Study on Reaction Mechanism of Aluminum Selective Chemical Vapor Deposition With In-situ Xps Measurement, Jpn. J. Appl. Phys., 29(11), 2657-2661, 19901101
- Atomic Layer Controlled Digital Etching of Silicon, Jpn. J. Appl. Phys., 29(11), 2648-2652, 19901101
- Digital Chemical Vapor Deposition of SiO_2_, Appl. Phys. Lett=, 57(11), 1096-1098, 19901101
- Filling of Si Oxide into a Deep Trench Using Digital CVD Method., Appl. Surf. Sci., 46, 168-174, 19900701
- Low Energy Silicon Etching Technologies, Microelectronic Engineering, 13(1-4), 417-424, 19910301
- Diagnostics of Hydrogen Role in The Si Surface Reaction Processes Employing In-situ Fourier Transform Infrared Attenuated Total Reflection, Jpn. J. Appl. Phys., 30(11B), 3215-3218, 19911101
- In-situ X-Ray Photoelectron Spectroscopy of Reactive-Ion-Etched Surfaces of Indium-Tin Oxide Film Employing Alcohol Gas, Jpn. J. Appl. Phys., 31(6B), 2006-2010, 19920601
- Digital Etching Study and Fabrication of Fine Si Lines and Dots, Thin Solid Films, 225(1/2), 124-129, 19930101
- Recent Development of High Aspect Ratio Processes in ULSI Devices, J. Korean Phys. Soc., 26, S75-S81, 19930401
- Digital Chemical Vapor Deposition of Silicon Oxide/Nitride and Its Surface Reaction Study, Mat. Res. Soc. Symp. Proc.=, 284, 169-180, 19930401
- Al Etching Characteristics Employing Helicon Wave Plasma, Jpn. J. Appl. Phys., 32(6B), 3019-3022, 19930601
- Photoexited Anisotropic Etching of Single-Crystalline Silicon, Jpn. J. Appl. Phys., 32(7B), L1024-L1026, 19930701
- Electromigration Characteristics of Cu and Al Interconnections, Mater Reliab. Microelectron, 4, 441-451, 19940401
- High Intensity Hydogen Lamp Employing Helicon Wave Plasma and Its Application to Si and SiO2 Etching, Appl. Surf. Sci., 79/80, 495-501, 19941201
- Electromigration Characteristics of Cu-Al Precipitate In AlCu Interconnection, Jpn. J. Appl. Phys., 33(7A), 3860-3863, 19940701
- Resistance Oscillations Induced by Direct Current Electromigration, Jpn. J. Appl. Phys., 34(2B), 1030-1036, 19950201
- Fabrication and Evaluation of Three Dimensional Optically Coupled Common Memory, Jpn. J. Appl. Phys., 34(2B), 1246-1248, 19950201
- Fabrication of a Si Nanometer Column PN Junction and Implanted Defect Evaluation by Transmission Electron Microscopy, Jpn. J. Appl. Phys., 35(2B), 1045-1048, 19960201
- Ordered Two-Dimensional Nanowire Array Formation Using Self-Organized Nanoholes of Anodically Oxidized Aluminum, Jpn. J. Appl. Phys., 36(12B), 7791-7795, 19971201
- Scanning Tunneling Microscopy Observation on The Atomic Structures of Step Edges and Etch Pits on a NH4F-Treated Si(111) Surface, Jpn. J. Appl. Phys., 36(3B), 1420-1423, 19970301
- Self-Organization of a Two-Dimensional Array of Gold Nanodots Encapsulated by Alkanethiol, Jpn. J. Appl. Phys., 37(12B), 7198-7201, 19981201
- Self-Organized Gold Nanodots Array On A Silicon Substrate And Its Mechanical Stability, Jpn. J. Appl. Phys., 38(12A), L1488-L1490, 19991201
- Control of Interdot Space and Dot Size in a Two-Dimensional Gold Nanodot Array, Jpn. J. Appl. Phys., 38(4B), L473-L476, 19990401
- Correlation Between Agglomeration of a Thin Film and Reflow Filling in a Contact Hole for Sputtered Al Films, J. Vac. Sci. Technol. B, 17(6), 2553-2558, 19990601
- Two-Dimensional Nanoware Array Formation On Si Substrate Using Self-Organized Nanoholes of Anodically Oxidized Aluminum, Solid State Electron, 43(6), 1143-1146, 19990601
- Electrical Properties of Self-Organized Nanostructures of Alkanethiol-Encapsulated Gold Particles, J. Vac. Sci. Technol. B, 18(6), 2653-2657, 20000601
- Well Size Controlled Colloidal Gold Nanoparticles Dispersed in Organic Solvents, Jpn. J. Appl. Phys., 40(1), 346-349, 20010101
- Formation of A Large Scale Langmuir-Blodgett Monolayer of Alkanethiol-Encapsulated Gold Particles, J. Vac. Sci. Technol. B, 19(1), 115-120, 20010101
- ★, Atomic-Scale Defect Control on Hydrogen-Terminated Silicon Surface at Wafer Scale, Appl. Phys. Lett., 78(3), 309-311, 20010101
- Low Dielectric Constant Porous Diamond Film Composed of Diamond Nano-Particles, Mat. Res. Soc. Symp. Proc., ULSI-XVI, 647-652, 20011001
- Effect of Pd Catalyst Adsorption on Cu Filling Characteristics in Electroless Plating, Mat. Res. Soc. Symp. Proc., ULSI-XVI, 229-234, 20011101
- TEM Observation of the Damages in Heavily Ion-implanted Fine Si Columns, Mat. Res. Soc. Symp. Proc., 354, 641-646., 19950401
- GaAs/Si Optoelectronic Design and Development at Hiroshima University, International Workshop: Semiconductor Characterization, 1-5, 19950401
- Adsorbed Water on a Silicon Wafer Surface Exposed to Atmosphere, Jpn. J. Appl. Phys., 40(11), 6198-6201., 20011101
- Electroless Plating of Cu Initiated by Displacement Reaction on Metal-Nitride Diffusion Barriers, Electrochem. Solid-State Letters, 6(3), C38-C41, 20030301
- Direct Electroless Plating of Copper on Barrier Metals, Proc. of the 2002 Internaional Interconnect Conference, 176-178, 20020501
- Direct Electroless Copper Plating on Barrier Metals without Pd Catalyst, Mat. Res. Soc. Symp. Proc., ULSI-XVII, 185-190, 20020401
- Improved Mechanical Strength of Porous Diamond Film by Silane coupler, Mat. Res. Soc. Symp. Proc., ULSI-XVII, 313-318, 20020401
- DIRECT ELECTROLESS PLATING OF COPPER ON METAL NITRIDE DIFFUSION BARRIERS, The 19th VLSI Multilevel Interconnect Conference, 147-155, 20021101
- Fabrication of two- and three-dimensional structures of nanoparticles using LB method and DNA hybridization, Mat. Res. Soc. Symp. Proc., 704, 47-52, 20020401
- Experimental Condition for a Highly Ordered Monolayer of Gold Nanoparticles Fabrication by the Lagumuir-Blodgett Method, J. Vac. Sci. Technol. B, 19(6), 2045-2049, 20010601
- Scanning Electron Microscope Observation of Heterogeneous Three-Dimensional Nanoparticle Array Using DNA, Jpn. J. Appl. Phys., 40(5B), L521-L523, 20010501
- Computer-Aided Chemistry Estimation Method of Electronic-polarization Dielectric Constant for the Molecular Design of Low-k Materials, Jpn. J. Appl. Phys., 42(1), 157-161, 20030101
- Improved Mechanical Strength of Porous Diamond Film by Silane Coupler, Abstracts of Advanced Metallization Conf. Asian Session (ADMATA2001), 196-197, 20011001
- Low dielectric constant porous diamond films formed by diamond nanoparticles, Appl. Phys. Lett., 83(11), 2226-2228, 20030901
- Improved Mechanical Strength of Porous Diamond Film by Silane Coupler, Abstracts of Advanced Metallization Conf.(AMC2001), 196-197, 20011001
- Highly Adhesive Electroless Cu Layer Formation Using an Ultra Thin Ionized Cluster Beam (ICB)-Pd Catalytic Layer for Sub-100nm Cu Interconnections, Jpn. J. Appl. Phys., 42(10B), L1223-L1225, 20031001
- Suppression of native oxide growth in sputtered TaN films and its application to Cu electroless plating, J. Appl. Phys., 94(7), 4697-4701, 20030701
- Influence of Surface Oxide of Sputtered TaN on Displacement Plating of Cu, Jpn. J. Appl. Phys., 42(4B), 1843-1846, 20030401
- Off- and On-Time Dependences of Electromigration MTF in Pulsed DC Stressing Tests, Mat. Res. Soc. Symp. Proc., ULSI-XVIII, 279-284, 20030401
- Formation of Al Dot Hexagonal Array on Si Using Anodic Oxidation and Selective Etching, Jpn. J. Appl. Phys., 41(3B), L340-L343, 20020301
- Formation of Al Nanodot Array by the Combination of Nano-Indentation and Anodic Oxidation, Mat. Res. Soc. Symp. Proc., 705, 133-138, 20020401
- Fabrication of nanohole array on Si using self-organized porous alumina mask, J. Vac. Sci. Technol. B, 19(5), 1901-1904, 20010501
- Study of a Dielectric Constant Due to Electronic Polarization Using a Semiemprical Molecular Orbital Method I, Jpn. J. Appl. Phys., 40(8), 4829-4836, 20010801
- Wet Treatment for Preparing Atomically Smooth Si(100) Wafer Surface, Abstracts of 9th Int. Conf. on Formation of Semiconductor Interfaces (ICFSI-9), 46, 20030901
- Preparation of Atomic-Scale Level Smooth Si(100) Surface using Wet Treatment, Abstracts of 7th Int. Conf. on Atomically Controlled Surfaces Interfaces and Nanostructures (ACSIN-7), 228, 20031101
- Bottom-up Fill of Copper in High Aspect Ratio Via Holes by Electroless Plating, Technical Digest of IEEE IEDM, 147-150, 20031201
- Electroless Copper Seed Activated by 1nm ICB-Pd Catalytic Layer for Fine Cu Interconnections, Proc. of Int. Conf. On Solid State Devices and Materials 2003, 456-457, 20030901
- Fabrication of Ultra High Density Ferromagnetic Column Arrays by Porous Alumina Template for Magnetic Recording Media, Microprocess and Nanostructure Conf. 2003, 62-63, 20031001
- Formation of 10 nm Continuous Cu Film in a Fine Hole by Electroless Plating for Seed Layer Application, Mat. Res. Soc. Symp. Proc., ULSI-XIX, 567, 20040301
- Wet preparation of defect-free hydrogen-terminated silicon wafer surface and its characterization in atomic-scale, Solid State Phenomena, 76-77, 105-110, 20010401
- Electromigration Reliability Study of a GMR Spin Valve Devices, Mat. Res. Soc. Symp. Proc., 563, 145-150, 19990401
- Aspect Ratio Dependence of Magnetic Hysteresis Property of High Density Co Wire Array Buried In Porous Alumina Template, J. Magnetics and Magnetic Materials, 272-276, 1598-1599, 20040601
- Bottom-up fill of Cu in deep submicron holes by electroless plating, Electrochem. Solid-State Letters, 7, C78-C80, 20040601
- Bottom-up fill for submicrometer copper via holes of ULSIs by electroless plating, J. Electrochem. Soc., 151(12), C781-C785, 20041201
- Effect of additives on hole filling characteristics of electroless copper plating, Jpn. J. Appl. Phys., 43(10), 7000-7001, 20041001
- Thickness dependences of nucleation and annihilation fields of magnetic vortices in submicron supermalloy dots, Jpn. J. Appl. Phys., 42(8), 5038-5039, 20030801
- Self-organization of a porous alumina nanohole array using a sulfuric/oxalic acid mixture as electrolyte, Electrochem. Solid-State Letters, 7(3), E15-E17, 20040301
- Wet treatment for preparing atomically smooth Si(100) wafer surface, Appl. Surf. Sci., 234, 439-444, 20040601
- Nano-patterning of Organic Molecules on H-terminated Si Surface by AFM, 8th International Conf. on Atomically Controlled Surfaces, Interfaces and Nanostructures, 114, 20050601
- Nanometer-Scale Control of Film Thickness and Pattern Width of Alkyl SAM on H-Terminated Si(111) Surface, International Symp. on Surface Science and Nanotechnology, 536, 20051101
- Epitaxial Growth of Cu Nanodot Arrays Using an AAO Template on a Si Substrate, Electrochem. Solid-State Letters, 9(4), J13-J16, 20060401
- Surface Cleaning of PET Films with an Atmospheric Pressure Dielectric Barrier Discharge, Abstracts of 8th Asia-Pacific Conference on Plasma Science and Technology, 197, 20060701
- Experimental Study of Temperatures of Atmospheric-Pressure Nonequilibrium Ar/N2 Plasma Jets and Poly (ethyleneterephtalate)-Surface Processing, Jpn. J. Appl. Phys., 46(2), 795-798, 20070201
- Fabrication of the Ordered Dangling Bond Rows on Hydrogen Terminated Si(111) Surface with Periodic Step/Terrace Structure, Abstracts of 13th International Conf. on Solid Films and Surfaces, 240 (PIII-55), 20061101
- Electrical Characteristics of Low Dielectric Porous Diamond Film Composed by Diamond Nano-particles, Abstracts of 13th International Conf. on Solid Films and Surfaces, 47 (PI-02), 20061101
- Large Negative Resistance Property Observed in 3-D Network of DNA and Gold Nanoparticle Formed by DNA Mediated Self-organization, 2004 International Conf. on Solid State Devices and Materials, 114-115, 20040801
- Immobilization of Gold Nanoparticles on Silanized Substrate for Sensors Based on Localized Surface Plasmon Resonance, e-J. Surf. Sci. Nanotech., 5, 1-6, 20070101
- New method to calibrate binding energy using Au nanocolloids in X-ray photoelectron analysis of diamondlike carbon films with different electrical resistivities, Appl. Surf. Sci., 254, 2666-2670, 20071101
- X-ray Photoelectron Analysis of Diamondlike Carbon (DLC) Films with Different Electric Resistivities, The 9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-9), 20071111
- PHOTOELECTERON SPECTROSCOPIC ANALYSIS OF CHEMICAL STRUCTURE OF DIAMONDLIKE CARBON WITH DIFFERENT ELECTRICAL RESISTIVITIES, 2008 International Conference on Carbon (CARBON'08), 20080701
- Activation energy of flipping behavior of porphyrin derivative molecule on Au(111), Abs. 5th International Meeting on Molecular Electronics, 326, 20101201
- Controlled motion of dynein-microtubule system by patterned resist polymer, Abs. 9th International Conference on Nano-Molecular Electronics, 83, 20101201
- Flipping behavior of porphyrin derivative molecule on Au (111), Abs. 9th International Conference on Nano-Molecular Electronics, 148, 20101201
- Chemical Structures of Ge (111) Surface Treated by Hydrogen Halide Aqueous Solutions, The 15th International Conf. on Solid Films and Surfaces (ICSFS-15, Beijing), -, 20101001
- Controlled motion of dynein-microtubule system by patternd resist polymer, Abs. 9th International Conference on Nano-Molecular Electronics, 83, 20101201
- Flipping behavior of porphyrin derivative molecule on Au (111), Abs. 9th International Conference on Nano-Molecular Electronics, 148, 20101201
- Fabrication of dimer of silver nanoparticles for surface enhanced raman scattering, Colloids and Materials 2011, -(-), P3.95, 20110501
- Electrical properties of self-organized nanostructures of alkanethiol-encapsulated gold particles, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 18(6), 2653-2657, 2000
- Atomic-scale defect control on hydrogen-terminated silicon surface at wafer scale, APPLIED PHYSICS LETTERS, 78(3), 309-311, 20010115
- Formation of a large-scale Langmuir-Blodgett monolayer of alkanethiol-encapsulated gold particles, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 19(1), 115-120, 2001
- Well-size-controlled colloidal gold nanoparticles dispersed in organic solvents, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40(1), 346-349, 200101
- Wet preparation of defect-free hydrogen-terminated silicon wafer surface and its characterization in atomic-scale, ULTRA CLEAN PROCESSING OF SILICON SURFACES 2000, 76-77, 105-110, 2001
- Study of a dielectric constant due to electronic polarization using a semiempirical molecular orbital method I, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40(8), 4829-4836, 200108
- Scanning electron microscope observation of heterogeneous three-dimensional nanoparticle arrays using DNA, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(5B), L521-L523, 20011215
- Fabrication of nanohole array on Si using self-organized porous alumina mask, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 19(5), 1901-1904, 2001
- Adsorbed water on a silicon wafer surface exposed to atmosphere, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 40(11), 6198-6201, 200111
- Experimental conditions for a highly ordered monolayer of gold nanoparticles fabricated by the Langmuir-Blodgett method, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 19(6), 2045-2049, 2001
- Formation of Al dot hexagonal array on Si using anodic oxidation and selective etching, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 41(3B), L340-L343, 20020315
- Optical spectroscopic studies of the dispersibility of gold nanoparticle solutions, JOURNAL OF APPLIED PHYSICS, 92(12), 7486-7490, 20021215
- Electroless plating of copper on metal-nitride diffusion barriers initiated by displacement plating, ELECTROCHEMICAL AND SOLID STATE LETTERS, 6(3), C38-C41, 200303
- Computer-aided chemistry estimation method of electronic-polarization dielectric constants for the molecular design of low-k materials, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(1), 157-161, 200301
- Influence of surface oxide of sputtered TaN on displacement plating of Cu, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(4B), 1843-1846, 200304
- Suppression of native oxide growth in sputtered TaN films and its application to Cu electroless plating, JOURNAL OF APPLIED PHYSICS, 94(7), 4697-4701, 20031001
- Thickness dependences of nucleation and annihilation fields of magnetic vortices in submicron supermalloy dots, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(8), 5038-5039, 200308
- Self-organization of a porous alumina nanohole array using a sulfuric/oxalic acid mixture as electrolyte, ELECTROCHEMICAL AND SOLID STATE LETTERS, 7(3), E15-E17, 2004
- Low dielectric constant porous diamond films formed by diamond nanoparticles, APPLIED PHYSICS LETTERS, 83(11), 2226-2228, 20030915
- Highly adhesive electroless Cu layer formation using an ultra thin ionized cluster beam (ICB)-Pd catalytic layer for sub-100 nm Cu interconnections, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 42(10B), L1223-L1225, 20031015
- Effects of the surface pressure on the formation of Langmuir-Blodgett monolayer of nanoparticles, LANGMUIR, 20(6), 2274-2276, 20040316
- Bottom-up fill of copper in deep submicrometer holes by electroless plating, ELECTROCHEMICAL AND SOLID STATE LETTERS, 7(6), C78-C80, 2004
- Aspect ratio dependence of hysteresis property of high density Co wire array buried in porous alumina template, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 272, 1598-1599, 200412
- Wet treatment for preparing atomically smooth Si(100) wafer surface, APPLIED SURFACE SCIENCE, 234(1-4), 439-444, 20040715
- Effect of additives on hole filling characteristics of electroless copper plating, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(10), 7000-7001, 200410
- Bottom-up fill for submicrometer copper via holes of ULSIs by electroless plating, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 151(12), C781-C785, 2004
- Contact resistance reduction using vacuum loadlock system and plasma dry cleaning, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(6A), 3860-3863, 200506
- Characterization of electroless-plated Cu film over Pd catalytic layer formed by an ionized cluster beam, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 152(10), C684-C687, 2005
- Fabrication of carbon nanotube and nanorod arrays using nanoporous templates, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(7A), 5289-5291, 200507
- Epitaxial growth of Cu nanodot arrays using an AAO template on a Si substrate, ELECTROCHEMICAL AND SOLID STATE LETTERS, 9(4), J13-J16, 2006
- Bottom-up copper fill with addition of mercapto alkyl carboxylic acid in electroless plating, ELECTROCHIMICA ACTA, 51(12), 2442-2446, 20060225
- Experimental study of temperatures of atmospheric-pressure nonequilibrium Ar/N-2 plasma jets and poly(ethylene terephtalate)-surface processing, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(2), 795-798, 200702
- New method to calibrate binding energy using Au nanocolloids in X-ray photoelectron analysis of diamondlike carbon films with different electrical resistivities, APPLIED SURFACE SCIENCE, 254(9), 2666-2670, 20080228
- Surface Analysis of Carbon-Hydrogen Bonds in Diamondlike Carbon Films by X-ray Photoelectron Spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS, 48(9), 200909
- X-ray photoelectron analysis of surface functional groups on diamond-like carbon films by gas-phase chemical derivatization method, SURFACE AND INTERFACE ANALYSIS, 42(2), 77-87, 201002
- Study of Adsorption Behavior of Disulfide on the Surface of Au Nanoparticle by X-ray Photoelectron Spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS, 52(8), 201308
- Atomic Layer Controlled Digital Etching of Silicon, Japanese Journal of Applied Physics, 29(11), 2648-2652, 1990
- Quantitative analysis of adsorbed water on a germanium oxide surface, 13th European Vacuum Conference, 20140908
- Influence of surface hydrophobicity on self-spreading of lipid bilayer, 11th International Conference on Nano-Molecular Electronics, 20141217
- Density of immobilized quantum dots by a self-assembled monolayer, 11th International Conference on Nano-Molecular Electronics, 20141217
- Disorder into 2D ordered PCBM structures brought by additional deposition of CuPc, 11th International Conference on Nano-Molecular Electronics, 20141217
- Self-Spreading of Lipid Bilayer on a Hydrophobic Surface Made by Self-Assembled Monolayer with Short Alkyl Chain, Journal of Nanoscience and Nanotechnology, 16(4), 3426-3430, 20160413
- Intermixing behaviors of PCBM with CuPc on Au(111) surface, Chemical Physics Letters, 661, 215-218, 20160906
- Intermixing behaviors of PCBM with CuPc on Au(111) surface, CHEMICAL PHYSICS LETTERS, 661, 215-218, 20160916
- Self-Spreading of Lipid Bilayer on a Hydrophobic Surface Made by Self-Assembled Monolayer with Short Alkyl Chain, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 16(4), 3426-3430, 201604
- Fabrication of the sulfur-terminated Ge(111) surface, 15th International Conf. on the Formation of Semiconductor Interfaces, 20151115
- Estimation of the Number of Quantum Dots Immobilized on an Ultra-flat Au Surface, NANOSCALE RESEARCH LETTERS, 12, 20170426
Invited Lecture, Oral Presentation, Poster Presentation
- Fabrication of Ag substrate immobilized Ag nano-particles for high sensitivity Raman scattering spectroscopy, Koudai Tokiyasu, Hitoshi Suzuki, Hiroyuki Sakaue, Koudai Tokiyasu, Hitoshi Suzuki, Hiroyuki Sakaue, 32nd International Microprocesses and Nanotechnology Conference (MNC2019), 2019/10/28, Without Invitation, English, Hiroshima