Hiroyuki Sakaue

Last Updated :2021/04/06

Affiliations, Positions
Graduate School of Advanced Science and Engineering, Assistant Professor
E-mail
hsakauehiroshima-u.ac.jp
Other Contact Details
1-3-1 Kagamiyama, Higashi-Hiroshima, Japan
TEL : (+81)82-424-7683 FAX : (+81)

Basic Information

Major Professional Backgrounds

  • 2001/04/01, 2020/03/31, Hiroshima University, Graduate School of Advanced Sciences and Matter, Assistant Professor
  • 1989/10/01, 2001/03/31, Hiroshima University, Faculty of Engineering, Research Associate

Educational Backgrounds

  • Hiroshima University, Graduate School of Engineering, Japan, 1987/04, 1989/03
  • Hiroshima University, Faculty of Engineering, Japan, 1983/04, 1987/03

Academic Degrees

  • Doctor of Engineering, Hiroshima University
  • Master of Engineering, Hiroshima University

Research Fields

  • Engineering;Electrical and electronic engineering;Electronic materials / Electric materials

Research Keywords

  • Surface Reaction
  • self-organization
  • semiconducor surface
  • wet treatment
  • photovoltaic device
  • diamond
  • low dielectric constant
  • CVD
  • porous
  • Etching

Affiliated Academic Societies

Educational Activity

Course in Charge

  1. 2021, Undergraduate Education, 1Term, Experiments in Electrical Engineering Electronics and System Engineering I
  2. 2021, Undergraduate Education, 2Term, Experiments in Electrical Engineering Electronics and System Engineering I
  3. 2021, Undergraduate Education, 3Term, Experiments in Electrical Engineering Electronics and System Engineering II
  4. 2021, Undergraduate Education, 4Term, Experiments in Electrical Engineering Electronics and System Engineering II
  5. 2021, Undergraduate Education, 1Term, Basic Experiments in Electrical Engineering I
  6. 2021, Undergraduate Education, 2Term, Basic Experiments in Electrical Engineering I
  7. 2021, Undergraduate Education, 3Term, Basic Experiments in Electrical Engineering II
  8. 2021, Undergraduate Education, 4Term, Basic Experiments in Electrical Engineering II
  9. 2021, Graduate Education (Master's Program) , First Semester, Seminar on Electronics A
  10. 2021, Graduate Education (Master's Program) , Second Semester, Seminar on Electronics B
  11. 2021, Graduate Education (Master's Program) , Academic Year, Academic Presentation in Electronics
  12. 2021, Graduate Education (Master's Program) , 1Term, Exercises in Electronics A
  13. 2021, Graduate Education (Master's Program) , 2Term, Exercises in Electronics A
  14. 2021, Graduate Education (Master's Program) , 3Term, Exercises in Electronics B
  15. 2021, Graduate Education (Master's Program) , 4Term, Exercises in Electronics B
  16. 2021, Graduate Education (Master's Program) , Academic Year, Advanced Study in Quantum Matter

Research Activities

Academic Papers

  1. Quantitative analysis of adsorbed water on a germanium oxide surface, 13th European Vacuum Conference, 20140908
  2. Influence of surface hydrophobicity on self-spreading of lipid bilayer, 11th International Conference on Nano-Molecular Electronics, 20141217
  3. Density of immobilized quantum dots by a self-assembled monolayer, 11th International Conference on Nano-Molecular Electronics, 20141217
  4. Disorder into 2D ordered PCBM structures brought by additional deposition of CuPc, 11th International Conference on Nano-Molecular Electronics, 20141217
  5. Chemical Structural Analysis of Diamondlike Carbon Films with Different Electrical Resistivities by X-ray Photoelectron Spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(5), 3376-3379, 200812
  6. Annealing effect on the chemical structure of diamondlike carbon, JOURNAL OF APPLIED PHYSICS, 104(4), 20080815
  7. Direct fabrication of nanopores in a metal foil using focused ion beam with in situ measurements of the penetrating ion beam current, REVIEW OF SCIENTIFIC INSTRUMENTS, 80(12), 200912
  8. Flipping Behavior of a Porphyrin Derivative Molecule on a Au(111) Reconstructed Surface, JOURNAL OF PHYSICAL CHEMISTRY C, 115(25), 12414-12418, 20110630
  9. Flipping Behavior of a Porphyrin Derivative Molecule on a Au(111) Reconstructed Surface, JOURNAL OF PHYSICAL CHEMISTRY C, 115(25), 12414-12418, 20110630
  10. Simple Method of Synthesizing Nickel-Nitrilotriacetic Acid Gold Nanoparticles with a Narrow Size Distribution for Protein Labeling, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(9), 201109
  11. Simple Method of Synthesizing Nickel-Nitrilotriacetic Acid Gold Nanoparticles with a Narrow Size Distribution for Protein Labeling, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(9), 201109
  12. Climbing Rates of Microtubules Propelled by Dynein after Collision with Microfabricated Walls, JAPANESE JOURNAL OF APPLIED PHYSICS, 51(2), 201202
  13. Digital Chemical Vapor Deposition of SiO2 Using a Repetitive Reaction of Triethylsilane/Hydrogen and Oxidation, Jpn. J. Appl. Phys., 30, L124-L127, 19910401
  14. Si Etching Employing Steady-State Magnetron Plasma with Magnet at Anode Centered in Cylindrical Reactor, Jpn. J. Appl. Phys., 31(12B), 4338-4342, 19921201
  15. Aluminum-Selective Chemical Vapor Deposition Induced by Hydrogen Desorption on Silicon, Jpn. J. Appl. Phys., 35(2B), 1010-1013, 19960201
  16. Excimer Laser Induced Pattern Projection Etching of Aluminum, Symp. on Dry Process, 19880401
  17. Digital Etching of Silicon, 1990 3rd Micro Process Conf., 19900401
  18. Study on Reaction Mechanism of Al Selective CVD with in-situ XPS Measurement, 1990 3rd Micro Process Conf., 19900401
  19. Conformable CVD of SiO_2_ into Deep Trench Using the Digral Method, 22nd (1990 International) Conf. on Solid State Devices and Materials, 19900401
  20. Conformal Chemical Vapor Deposition of Insulator Films Employig Digital Method, Symp. on Dry Process, 19900401
  21. In-situ X-ray Photoelectron Spectrocopy Observation on Reactive Etched Surface of Indium-Tin Oxide Film Employing Alcohol Gas, Symp. on Dry Process, 19910401
  22. Diagnostic of Hydrogen Role on Si Surface Reaction processes Employing in-situ FTIR-ATR, 1991 4th International Microprocess Conf., 19910701
  23. Excimer Laser Enhanced Reactive Ion Etching, 19920401
  24. Si Etching Employing Steady-State Magnetron Plasma with Magnet at Anode Centered in Cylindrical Reactor, 5th International MicroProcess Conf., 19920401
  25. Digital CVD of Si Oxide/Nitride and Study on its Surface Reaction, Mat. Res. Soc. Fall Meeting, 19920401
  26. Spontaneous Etching of SiO_2_ Employing Downstream Plasma, 183rd Meeting of Electrochem. Soc., 19930401
  27. Reflective Absorption Spectroscopy of Reaction Process of Silicon Surface with Fluorine Radicals, 7th Intern. MicroProcess Conf., 19940701
  28. Low Energy Bias Sputtering Filling of SiO2 into High Aspect Ratio Trench Employing Axially Confined Helicon Wave Plasma, 1994 International Conf. on Solid State Devices and Materials, 643-645, 19940801
  29. Study of Fluorination Process of H-terminated Si Surface by Xenon Fluoride Exposure, The 8th Intern. MicroProcess Conf., 172-173, 19950701
  30. Al-Selective CVD Induced by Hydrogen Desorption on Si, 1995 International Conf. on Solid State Devices and Materials, 926-928, 19950801
  31. Highly Selective SiO2 Etching Using CF4/C2H4, Jpn. J. Appl. Phys., 36(4B), 2477-2481, 19970401
  32. Scanning Tunneling Microscopy Observation on the Atomic structures of Step Edges and Etch Pits on NH4F-Treated Si(111) Surface, 1996 International Conf. on Solid State Devices and Materials, 392-394, 19960801
  33. Highly Selective SiO2 Etching Using CF4/C2H4, Proc. of Symp. on Dry Process, 141-146, 19961101
  34. Al Nano-Structure Formation using Selective Reactivity of Step/Terrace Structure of Hydrogen-terminated Si(111) Surface, 4th International Symp. on Atomically Controlled Surfaces and Interfaces, 345, 19971001
  35. Self-Organization of Periodic Step/Terrace Structure on Hydrogen-Terminated Si Surface, JRCAT International Workshop on Science and Technology of Hydrogen-Terminated Silicon Surfaces, 11-12, 19971101
  36. Wafer-Scale Self-Organization of Periodic Step/Terrace Structure on Hydrogen-Terminated Si Surface, 1998 International Conf.on Solid State Devices and Materials, 434-435, 19980901
  37. Perfect Control of Hydrogen-Terminated Silicon Wafer Surface, Proc.of 9th International Conference on Production Engineering, 871-876, 19990901
  38. Low Dielectric Constant Porous Diamond Film Composed of Diamond Nano-Particles, Abstracts of Advanced Metallization Conf. US Session(AMC2000), 85-86, 20001001
  39. Low Dielectric Constant Porous Diamond Film Composed of Diamond Nano-Particles, Abstracts of Advanced Metallization Conf. Asian Session(ADMATA2000), 175-176, 20001001
  40. Laser-Induced Pattern Projection Etching of Aluminum, Symp. on Dry Process (Tokyo= Nov. 1-2= 1990), pp. 187 - 190, 19881001
  41. Digital Chemical Vapor Deposition and Etching Technologies for Semiconductor Processing, J. Vac. Sci. Technol. A, 8, pp.1844-1850, 19900401
  42. Fabrication and Evaluation of Three-Dimensional Optically-Coupled Common Memory, 1994 International Conf. on Solid State Devices and Materials, 965-966, 19940801
  43. GaAs/Si Optoelectronic Design and Development at Hiroshima University, Semiconductor Characterization, 599-604, 19960401
  44. Fabrication and Evaluation of Three-Dimensional Optically-Coupled Common Memory, Jpn. J. Appl. Phys., 34(2B), 1246-1248, 19950401
  45. GaAs/Si Optoelectronic Design and Development at Hiroshima Universit, Proc. Intern. Workshop of Semicon. Character.(Gaithersburg= USA), 599-604, 19950401
  46. Fabrication and Evaluation of Three-Dimensional Optically-Coupled Common Memory, Extend. Abst. of Int. Conf. on Solid State Devices and Materials, 965-966, 19940401
  47. Digital Chemical Vapor Deposition and Etching Technologies for Semiconductor Processing, J. Vac. Sci. Technol. A, 8(3), 1844-1850, 19900301
  48. Study on Reaction Mechanism of Aluminum Selective Chemical Vapor Deposition With In-situ Xps Measurement, Jpn. J. Appl. Phys., 29(11), 2657-2661, 19901101
  49. Atomic Layer Controlled Digital Etching of Silicon, Jpn. J. Appl. Phys., 29(11), 2648-2652, 19901101
  50. Digital Chemical Vapor Deposition of SiO_2_, Appl. Phys. Lett=, 57(11), 1096-1098, 19901101
  51. Filling of Si Oxide into a Deep Trench Using Digital CVD Method., Appl. Surf. Sci., 46, 168-174, 19900701
  52. Low Energy Silicon Etching Technologies, Microelectronic Engineering, 13(1-4), 417-424, 19910301
  53. Diagnostics of Hydrogen Role in The Si Surface Reaction Processes Employing In-situ Fourier Transform Infrared Attenuated Total Reflection, Jpn. J. Appl. Phys., 30(11B), 3215-3218, 19911101
  54. In-situ X-Ray Photoelectron Spectroscopy of Reactive-Ion-Etched Surfaces of Indium-Tin Oxide Film Employing Alcohol Gas, Jpn. J. Appl. Phys., 31(6B), 2006-2010, 19920601
  55. Digital Etching Study and Fabrication of Fine Si Lines and Dots, Thin Solid Films, 225(1/2), 124-129, 19930101
  56. Recent Development of High Aspect Ratio Processes in ULSI Devices, J. Korean Phys. Soc., 26, S75-S81, 19930401
  57. Digital Chemical Vapor Deposition of Silicon Oxide/Nitride and Its Surface Reaction Study, Mat. Res. Soc. Symp. Proc.=, 284, 169-180, 19930401
  58. Al Etching Characteristics Employing Helicon Wave Plasma, Jpn. J. Appl. Phys., 32(6B), 3019-3022, 19930601
  59. Photoexited Anisotropic Etching of Single-Crystalline Silicon, Jpn. J. Appl. Phys., 32(7B), L1024-L1026, 19930701
  60. Electromigration Characteristics of Cu and Al Interconnections, Mater Reliab. Microelectron, 4, 441-451, 19940401
  61. High Intensity Hydogen Lamp Employing Helicon Wave Plasma and Its Application to Si and SiO2 Etching, Appl. Surf. Sci., 79/80, 495-501, 19941201
  62. Electromigration Characteristics of Cu-Al Precipitate In AlCu Interconnection, Jpn. J. Appl. Phys., 33(7A), 3860-3863, 19940701
  63. Resistance Oscillations Induced by Direct Current Electromigration, Jpn. J. Appl. Phys., 34(2B), 1030-1036, 19950201
  64. Fabrication and Evaluation of Three Dimensional Optically Coupled Common Memory, Jpn. J. Appl. Phys., 34(2B), 1246-1248, 19950201
  65. Fabrication of a Si Nanometer Column PN Junction and Implanted Defect Evaluation by Transmission Electron Microscopy, Jpn. J. Appl. Phys., 35(2B), 1045-1048, 19960201
  66. Ordered Two-Dimensional Nanowire Array Formation Using Self-Organized Nanoholes of Anodically Oxidized Aluminum, Jpn. J. Appl. Phys., 36(12B), 7791-7795, 19971201
  67. Scanning Tunneling Microscopy Observation on The Atomic Structures of Step Edges and Etch Pits on a NH4F-Treated Si(111) Surface, Jpn. J. Appl. Phys., 36(3B), 1420-1423, 19970301
  68. Self-Organization of a Two-Dimensional Array of Gold Nanodots Encapsulated by Alkanethiol, Jpn. J. Appl. Phys., 37(12B), 7198-7201, 19981201
  69. Self-Organized Gold Nanodots Array On A Silicon Substrate And Its Mechanical Stability, Jpn. J. Appl. Phys., 38(12A), L1488-L1490, 19991201
  70. Control of Interdot Space and Dot Size in a Two-Dimensional Gold Nanodot Array, Jpn. J. Appl. Phys., 38(4B), L473-L476, 19990401
  71. Correlation Between Agglomeration of a Thin Film and Reflow Filling in a Contact Hole for Sputtered Al Films, J. Vac. Sci. Technol. B, 17(6), 2553-2558, 19990601
  72. Two-Dimensional Nanoware Array Formation On Si Substrate Using Self-Organized Nanoholes of Anodically Oxidized Aluminum, Solid State Electron, 43(6), 1143-1146, 19990601
  73. Electrical Properties of Self-Organized Nanostructures of Alkanethiol-Encapsulated Gold Particles, J. Vac. Sci. Technol. B, 18(6), 2653-2657, 20000601
  74. Well Size Controlled Colloidal Gold Nanoparticles Dispersed in Organic Solvents, Jpn. J. Appl. Phys., 40(1), 346-349, 20010101
  75. Formation of A Large Scale Langmuir-Blodgett Monolayer of Alkanethiol-Encapsulated Gold Particles, J. Vac. Sci. Technol. B, 19(1), 115-120, 20010101
  76. ★, Atomic-Scale Defect Control on Hydrogen-Terminated Silicon Surface at Wafer Scale, Appl. Phys. Lett., 78(3), 309-311, 20010101
  77. Low Dielectric Constant Porous Diamond Film Composed of Diamond Nano-Particles, Mat. Res. Soc. Symp. Proc., ULSI-XVI, 647-652, 20011001
  78. Effect of Pd Catalyst Adsorption on Cu Filling Characteristics in Electroless Plating, Mat. Res. Soc. Symp. Proc., ULSI-XVI, 229-234, 20011101
  79. TEM Observation of the Damages in Heavily Ion-implanted Fine Si Columns, Mat. Res. Soc. Symp. Proc., 354, 641-646., 19950401
  80. GaAs/Si Optoelectronic Design and Development at Hiroshima University, International Workshop: Semiconductor Characterization, 1-5, 19950401
  81. Adsorbed Water on a Silicon Wafer Surface Exposed to Atmosphere, Jpn. J. Appl. Phys., 40(11), 6198-6201., 20011101
  82. Electroless Plating of Cu Initiated by Displacement Reaction on Metal-Nitride Diffusion Barriers, Electrochem. Solid-State Letters, 6(3), C38-C41, 20030301
  83. Direct Electroless Plating of Copper on Barrier Metals, Proc. of the 2002 Internaional Interconnect Conference, 176-178, 20020501
  84. Direct Electroless Copper Plating on Barrier Metals without Pd Catalyst, Mat. Res. Soc. Symp. Proc., ULSI-XVII, 185-190, 20020401
  85. Improved Mechanical Strength of Porous Diamond Film by Silane coupler, Mat. Res. Soc. Symp. Proc., ULSI-XVII, 313-318, 20020401
  86. DIRECT ELECTROLESS PLATING OF COPPER ON METAL NITRIDE DIFFUSION BARRIERS, The 19th VLSI Multilevel Interconnect Conference, 147-155, 20021101
  87. Fabrication of two- and three-dimensional structures of nanoparticles using LB method and DNA hybridization, Mat. Res. Soc. Symp. Proc., 704, 47-52, 20020401
  88. Experimental Condition for a Highly Ordered Monolayer of Gold Nanoparticles Fabrication by the Lagumuir-Blodgett Method, J. Vac. Sci. Technol. B, 19(6), 2045-2049, 20010601
  89. Scanning Electron Microscope Observation of Heterogeneous Three-Dimensional Nanoparticle Array Using DNA, Jpn. J. Appl. Phys., 40(5B), L521-L523, 20010501
  90. Computer-Aided Chemistry Estimation Method of Electronic-polarization Dielectric Constant for the Molecular Design of Low-k Materials, Jpn. J. Appl. Phys., 42(1), 157-161, 20030101
  91. Improved Mechanical Strength of Porous Diamond Film by Silane Coupler, Abstracts of Advanced Metallization Conf. Asian Session (ADMATA2001), 196-197, 20011001
  92. Low dielectric constant porous diamond films formed by diamond nanoparticles, Appl. Phys. Lett., 83(11), 2226-2228, 20030901
  93. Improved Mechanical Strength of Porous Diamond Film by Silane Coupler, Abstracts of Advanced Metallization Conf.(AMC2001), 196-197, 20011001
  94. Highly Adhesive Electroless Cu Layer Formation Using an Ultra Thin Ionized Cluster Beam (ICB)-Pd Catalytic Layer for Sub-100nm Cu Interconnections, Jpn. J. Appl. Phys., 42(10B), L1223-L1225, 20031001
  95. Suppression of native oxide growth in sputtered TaN films and its application to Cu electroless plating, J. Appl. Phys., 94(7), 4697-4701, 20030701
  96. Influence of Surface Oxide of Sputtered TaN on Displacement Plating of Cu, Jpn. J. Appl. Phys., 42(4B), 1843-1846, 20030401
  97. Off- and On-Time Dependences of Electromigration MTF in Pulsed DC Stressing Tests, Mat. Res. Soc. Symp. Proc., ULSI-XVIII, 279-284, 20030401
  98. Formation of Al Dot Hexagonal Array on Si Using Anodic Oxidation and Selective Etching, Jpn. J. Appl. Phys., 41(3B), L340-L343, 20020301
  99. Formation of Al Nanodot Array by the Combination of Nano-Indentation and Anodic Oxidation, Mat. Res. Soc. Symp. Proc., 705, 133-138, 20020401
  100. Fabrication of nanohole array on Si using self-organized porous alumina mask, J. Vac. Sci. Technol. B, 19(5), 1901-1904, 20010501
  101. Study of a Dielectric Constant Due to Electronic Polarization Using a Semiemprical Molecular Orbital Method I, Jpn. J. Appl. Phys., 40(8), 4829-4836, 20010801
  102. Wet Treatment for Preparing Atomically Smooth Si(100) Wafer Surface, Abstracts of 9th Int. Conf. on Formation of Semiconductor Interfaces (ICFSI-9), 46, 20030901
  103. Preparation of Atomic-Scale Level Smooth Si(100) Surface using Wet Treatment, Abstracts of 7th Int. Conf. on Atomically Controlled Surfaces Interfaces and Nanostructures (ACSIN-7), 228, 20031101
  104. Bottom-up Fill of Copper in High Aspect Ratio Via Holes by Electroless Plating, Technical Digest of IEEE IEDM, 147-150, 20031201
  105. Electroless Copper Seed Activated by 1nm ICB-Pd Catalytic Layer for Fine Cu Interconnections, Proc. of Int. Conf. On Solid State Devices and Materials 2003, 456-457, 20030901
  106. Fabrication of Ultra High Density Ferromagnetic Column Arrays by Porous Alumina Template for Magnetic Recording Media, Microprocess and Nanostructure Conf. 2003, 62-63, 20031001
  107. Formation of 10 nm Continuous Cu Film in a Fine Hole by Electroless Plating for Seed Layer Application, Mat. Res. Soc. Symp. Proc., ULSI-XIX, 567, 20040301
  108. Wet preparation of defect-free hydrogen-terminated silicon wafer surface and its characterization in atomic-scale, Solid State Phenomena, 76-77, 105-110, 20010401
  109. Electromigration Reliability Study of a GMR Spin Valve Devices, Mat. Res. Soc. Symp. Proc., 563, 145-150, 19990401
  110. Aspect Ratio Dependence of Magnetic Hysteresis Property of High Density Co Wire Array Buried In Porous Alumina Template, J. Magnetics and Magnetic Materials, 272-276, 1598-1599, 20040601
  111. Bottom-up fill of Cu in deep submicron holes by electroless plating, Electrochem. Solid-State Letters, 7, C78-C80, 20040601
  112. Bottom-up fill for submicrometer copper via holes of ULSIs by electroless plating, J. Electrochem. Soc., 151(12), C781-C785, 20041201
  113. Effect of additives on hole filling characteristics of electroless copper plating, Jpn. J. Appl. Phys., 43(10), 7000-7001, 20041001
  114. Thickness dependences of nucleation and annihilation fields of magnetic vortices in submicron supermalloy dots, Jpn. J. Appl. Phys., 42(8), 5038-5039, 20030801
  115. Self-organization of a porous alumina nanohole array using a sulfuric/oxalic acid mixture as electrolyte, Electrochem. Solid-State Letters, 7(3), E15-E17, 20040301
  116. Wet treatment for preparing atomically smooth Si(100) wafer surface, Appl. Surf. Sci., 234, 439-444, 20040601
  117. Nano-patterning of Organic Molecules on H-terminated Si Surface by AFM, 8th International Conf. on Atomically Controlled Surfaces, Interfaces and Nanostructures, 114, 20050601
  118. Nanometer-Scale Control of Film Thickness and Pattern Width of Alkyl SAM on H-Terminated Si(111) Surface, International Symp. on Surface Science and Nanotechnology, 536, 20051101
  119. Epitaxial Growth of Cu Nanodot Arrays Using an AAO Template on a Si Substrate, Electrochem. Solid-State Letters, 9(4), J13-J16, 20060401
  120. Surface Cleaning of PET Films with an Atmospheric Pressure Dielectric Barrier Discharge, Abstracts of 8th Asia-Pacific Conference on Plasma Science and Technology, 197, 20060701
  121. Experimental Study of Temperatures of Atmospheric-Pressure Nonequilibrium Ar/N2 Plasma Jets and Poly (ethyleneterephtalate)-Surface Processing, Jpn. J. Appl. Phys., 46(2), 795-798, 20070201
  122. Fabrication of the Ordered Dangling Bond Rows on Hydrogen Terminated Si(111) Surface with Periodic Step/Terrace Structure, Abstracts of 13th International Conf. on Solid Films and Surfaces, 240 (PIII-55), 20061101
  123. Electrical Characteristics of Low Dielectric Porous Diamond Film Composed by Diamond Nano-particles, Abstracts of 13th International Conf. on Solid Films and Surfaces, 47 (PI-02), 20061101
  124. Large Negative Resistance Property Observed in 3-D Network of DNA and Gold Nanoparticle Formed by DNA Mediated Self-organization, 2004 International Conf. on Solid State Devices and Materials, 114-115, 20040801
  125. Immobilization of Gold Nanoparticles on Silanized Substrate for Sensors Based on Localized Surface Plasmon Resonance, e-J. Surf. Sci. Nanotech., 5, 1-6, 20070101
  126. New method to calibrate binding energy using Au nanocolloids in X-ray photoelectron analysis of diamondlike carbon films with different electrical resistivities, Appl. Surf. Sci., 254, 2666-2670, 20071101
  127. X-ray Photoelectron Analysis of Diamondlike Carbon (DLC) Films with Different Electric Resistivities, The 9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-9), 20071111
  128. PHOTOELECTERON SPECTROSCOPIC ANALYSIS OF CHEMICAL STRUCTURE OF DIAMONDLIKE CARBON WITH DIFFERENT ELECTRICAL RESISTIVITIES, 2008 International Conference on Carbon (CARBON'08), 20080701
  129. Activation energy of flipping behavior of porphyrin derivative molecule on Au(111), Abs. 5th International Meeting on Molecular Electronics, 326, 20101201
  130. Controlled motion of dynein-microtubule system by patterned resist polymer, Abs. 9th International Conference on Nano-Molecular Electronics, 83, 20101201
  131. Flipping behavior of porphyrin derivative molecule on Au (111), Abs. 9th International Conference on Nano-Molecular Electronics, 148, 20101201
  132. Chemical Structures of Ge (111) Surface Treated by Hydrogen Halide Aqueous Solutions, The 15th International Conf. on Solid Films and Surfaces (ICSFS-15, Beijing), -, 20101001
  133. Controlled motion of dynein-microtubule system by patternd resist polymer, Abs. 9th International Conference on Nano-Molecular Electronics, 83, 20101201
  134. Flipping behavior of porphyrin derivative molecule on Au (111), Abs. 9th International Conference on Nano-Molecular Electronics, 148, 20101201
  135. Fabrication of dimer of silver nanoparticles for surface enhanced raman scattering, Colloids and Materials 2011, -(-), P3.95, 20110501
  136. Electrical properties of self-organized nanostructures of alkanethiol-encapsulated gold particles, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 18(6), 2653-2657, 2000
  137. Atomic-scale defect control on hydrogen-terminated silicon surface at wafer scale, APPLIED PHYSICS LETTERS, 78(3), 309-311, 20010115
  138. Formation of a large-scale Langmuir-Blodgett monolayer of alkanethiol-encapsulated gold particles, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 19(1), 115-120, 2001
  139. Well-size-controlled colloidal gold nanoparticles dispersed in organic solvents, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40(1), 346-349, 200101
  140. Wet preparation of defect-free hydrogen-terminated silicon wafer surface and its characterization in atomic-scale, ULTRA CLEAN PROCESSING OF SILICON SURFACES 2000, 76-77, 105-110, 2001
  141. Study of a dielectric constant due to electronic polarization using a semiempirical molecular orbital method I, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40(8), 4829-4836, 200108
  142. Scanning electron microscope observation of heterogeneous three-dimensional nanoparticle arrays using DNA, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(5B), L521-L523, 20011215
  143. Fabrication of nanohole array on Si using self-organized porous alumina mask, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 19(5), 1901-1904, 2001
  144. Adsorbed water on a silicon wafer surface exposed to atmosphere, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 40(11), 6198-6201, 200111
  145. Experimental conditions for a highly ordered monolayer of gold nanoparticles fabricated by the Langmuir-Blodgett method, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 19(6), 2045-2049, 2001
  146. Formation of Al dot hexagonal array on Si using anodic oxidation and selective etching, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 41(3B), L340-L343, 20020315
  147. Optical spectroscopic studies of the dispersibility of gold nanoparticle solutions, JOURNAL OF APPLIED PHYSICS, 92(12), 7486-7490, 20021215
  148. Electroless plating of copper on metal-nitride diffusion barriers initiated by displacement plating, ELECTROCHEMICAL AND SOLID STATE LETTERS, 6(3), C38-C41, 200303
  149. Computer-aided chemistry estimation method of electronic-polarization dielectric constants for the molecular design of low-k materials, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(1), 157-161, 200301
  150. Influence of surface oxide of sputtered TaN on displacement plating of Cu, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(4B), 1843-1846, 200304
  151. Suppression of native oxide growth in sputtered TaN films and its application to Cu electroless plating, JOURNAL OF APPLIED PHYSICS, 94(7), 4697-4701, 20031001
  152. Thickness dependences of nucleation and annihilation fields of magnetic vortices in submicron supermalloy dots, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(8), 5038-5039, 200308
  153. Self-organization of a porous alumina nanohole array using a sulfuric/oxalic acid mixture as electrolyte, ELECTROCHEMICAL AND SOLID STATE LETTERS, 7(3), E15-E17, 2004
  154. Low dielectric constant porous diamond films formed by diamond nanoparticles, APPLIED PHYSICS LETTERS, 83(11), 2226-2228, 20030915
  155. Highly adhesive electroless Cu layer formation using an ultra thin ionized cluster beam (ICB)-Pd catalytic layer for sub-100 nm Cu interconnections, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 42(10B), L1223-L1225, 20031015
  156. Effects of the surface pressure on the formation of Langmuir-Blodgett monolayer of nanoparticles, LANGMUIR, 20(6), 2274-2276, 20040316
  157. Bottom-up fill of copper in deep submicrometer holes by electroless plating, ELECTROCHEMICAL AND SOLID STATE LETTERS, 7(6), C78-C80, 2004
  158. Aspect ratio dependence of hysteresis property of high density Co wire array buried in porous alumina template, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 272, 1598-1599, 200412
  159. Wet treatment for preparing atomically smooth Si(100) wafer surface, APPLIED SURFACE SCIENCE, 234(1-4), 439-444, 20040715
  160. Effect of additives on hole filling characteristics of electroless copper plating, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(10), 7000-7001, 200410
  161. Bottom-up fill for submicrometer copper via holes of ULSIs by electroless plating, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 151(12), C781-C785, 2004
  162. Contact resistance reduction using vacuum loadlock system and plasma dry cleaning, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(6A), 3860-3863, 200506
  163. Characterization of electroless-plated Cu film over Pd catalytic layer formed by an ionized cluster beam, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 152(10), C684-C687, 2005
  164. Fabrication of carbon nanotube and nanorod arrays using nanoporous templates, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(7A), 5289-5291, 200507
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  166. Bottom-up copper fill with addition of mercapto alkyl carboxylic acid in electroless plating, ELECTROCHIMICA ACTA, 51(12), 2442-2446, 20060225
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  169. Surface Analysis of Carbon-Hydrogen Bonds in Diamondlike Carbon Films by X-ray Photoelectron Spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS, 48(9), 200909
  170. X-ray photoelectron analysis of surface functional groups on diamond-like carbon films by gas-phase chemical derivatization method, SURFACE AND INTERFACE ANALYSIS, 42(2), 77-87, 201002
  171. Study of Adsorption Behavior of Disulfide on the Surface of Au Nanoparticle by X-ray Photoelectron Spectroscopy, JAPANESE JOURNAL OF APPLIED PHYSICS, 52(8), 201308
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  173. Self-Spreading of Lipid Bilayer on a Hydrophobic Surface Made by Self-Assembled Monolayer with Short Alkyl Chain, Journal of Nanoscience and Nanotechnology, 16(4), 3426-3430, 20160413
  174. Intermixing behaviors of PCBM with CuPc on Au(111) surface, Chemical Physics Letters, 661, 215-218, 20160906
  175. Intermixing behaviors of PCBM with CuPc on Au(111) surface, CHEMICAL PHYSICS LETTERS, 661, 215-218, 20160916
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Invited Lecture, Oral Presentation, Poster Presentation

  1. Fabrication of Ag substrate immobilized Ag nano-particles for high sensitivity Raman scattering spectroscopy, Koudai Tokiyasu, Hitoshi Suzuki, Hiroyuki Sakaue, Koudai Tokiyasu, Hitoshi Suzuki, Hiroyuki Sakaue, 32nd International Microprocesses and Nanotechnology Conference (MNC2019), 2019/10/28, Without Invitation, English, Hiroshima