広島大学

Basic Information

Academic Degrees

• Doctor of Science, Kanazawa University
• Master of Science, Ibaraki University

Research Fields

• Engineering;Electrical and electronic engineering;Electron device / Electronic equipment

Research Activities

Academic Papers

1. Influence of the Gate Voltage or the Base Pair Ratio Modulation on the A-DNA FET Performance, IEICE TRANSACTIONS ON ELECTRONICS, E107C(3), 76-79, 202403
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2. Integrated Fabrication Process of Si Microcantilever Using TMAH Solution With Planar Mask, JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 32(3), 290-296, 202306
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3. Ambipolar Conduction of lambda-DNA Transistor Fabricated on SiO2/Si Structure, IEICE TRANSACTIONS ON ELECTRONICS, E105C(8), 369-374, 202208
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4. Evaluation of front-opening unified pod with attached UV/photocatalyst cleaning unit, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(2), 1130-1131, 200502
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5. Mobility and number fluctuations in MOS structures, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(4B), 2198-2200, 200504
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6. Fabrication of high-density diamond nanotips by electron beam lithography, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(3A), 1771-1774, 200603
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7. Fabrication of spin-coated optical waveguides for optically interconnected LSI and influence of fabrication process on underlying metal-oxide-semiconductor capacitors, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(4B), 3498-3503, 200604
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8. Proposal of a metal-oxide-semiconductor silicon optical modulator based on inversion-carrier absorption, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 2906-2909, 200804
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9. Fabrication of Si Nanowire Field-Effect Transistor for Highly Sensitive, Label-Free Biosensing, JAPANESE JOURNAL OF APPLIED PHYSICS, 48(6), 200906
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10. An Infrared Silicon Optical Modulator of Metal-Oxide-Semiconductor Capacitor Based on Accumulation-Carrier Absorption, JAPANESE JOURNAL OF APPLIED PHYSICS, 48(4), 200904
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11. Potentiality of Metal-Oxide-Semiconductor Silicon Optical Modulator Based on Free Carrier Absorption, JAPANESE JOURNAL OF APPLIED PHYSICS, 48(11), 200911
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12. Proposal of a silicon optical modulator based on surface plasmon resonance, Proceedings of SPIE, 8431, 2012
13. Fullerene-Containing Electrically Conducting Electron Beam Resist for Ultrahigh Integration of Nanometer Lateral-Scale Organic Electronic Devices, SCIENTIFIC REPORTS, 7, 20170627
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14. Influence of surface smoothing on spin Seebeck effect of Ce1Y2Fe5O12 deposited by metal organic decomposition, JAPANESE JOURNAL OF APPLIED PHYSICS, 56(4), 201704
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15. Anomalous Nernst effect of Ni-Al alloys and application to spin Seebeck devices, JAPANESE JOURNAL OF APPLIED PHYSICS, 57(4), 201804
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16. Long annealing effect on spin Seebeck devices fabricated using CexY3-xFe5O12 deposited by metal-organic decomposition, JAPANESE JOURNAL OF APPLIED PHYSICS, 57(4), 201804
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