三宅 正尭MASATAKA MIYAKE

Last Updated :2023/01/05

所属・職名
HiSIM研究センター 准教授
ホームページ
メールアドレス
masataka-miyakehiroshima-u.ac.jp
自己紹介
回路シミュレーション向けの半導体デバイスモデルの研究。

基本情報

主な職歴

  • 2010年04月01日, 2011年03月31日, 広島大学, HiSIM研究センター, 助教
  • 2011年04月01日, 2013年04月30日, 広島大学, HiSIM研究センター, 講師
  • 2013年05月01日, 広島大学, HiSIM研究センター, 准教授

学位

  • 博士(工学) (広島大学)
  • 修士(工学) (広島大学)

教育担当

  • 【学士課程】 工学部 : 第二類(電気電子・システム情報系) : 電子システムプログラム
  • 【博士課程前期】 先進理工系科学研究科 : 先進理工系科学専攻 : 量子物質科学プログラム
  • 【博士課程後期】 先進理工系科学研究科 : 先進理工系科学専攻 : 量子物質科学プログラム

担当主専攻プログラム

  • 電子システムプログラム

研究分野

  • 工学 / 電気電子工学 / 電子デバイス・電子機器
  • 工学 / 電気電子工学 / 電力工学・電力変換・電気機器
  • 総合理工 / 計算科学 / 計算科学

研究キーワード

  • コンパクトモデリング

所属学会

  • IEEE Power Electronics Society, 2010年
  • IEEE Electron Devices Society, 2011年
  • IEEE Industry Applications Society, 2011年

教育活動

授業担当

  1. 2022年, 修士課程・博士課程前期, 3ターム, パワーエレクトロニクス特論
  2. 2022年, 修士課程・博士課程前期, セメスター(前期), 電子工学セミナーA
  3. 2022年, 修士課程・博士課程前期, セメスター(後期), 電子工学セミナーB
  4. 2022年, 修士課程・博士課程前期, 年度, 電子工学プレゼンテーション演習
  5. 2022年, 修士課程・博士課程前期, 1ターム, 電子工学特別演習A
  6. 2022年, 修士課程・博士課程前期, 2ターム, 電子工学特別演習A
  7. 2022年, 修士課程・博士課程前期, 3ターム, 電子工学特別演習B
  8. 2022年, 修士課程・博士課程前期, 4ターム, 電子工学特別演習B
  9. 2022年, 修士課程・博士課程前期, 年度, 量子物質科学特別研究
  10. 2022年, 博士課程・博士課程後期, 年度, 量子物質科学特別研究

研究活動

学術論文(★は代表的な論文)

  1. A carrier-transit-delay-based nonquasi-static MOSFET model for circuit simulation and its application to harmonic distortion analysis, IEEE TRANSACTIONS ON ELECTRON DEVICES, 53巻, 9号, pp. 2025-2034, 200609
  2. HiSIM2 circuit simulation - Solving the speed versus accuracy crisis, IEEE CIRCUITS & DEVICES, 22巻, 5号, pp. 29-38, 2006
  3. Laterally diffused metal oxide semiconductor model for device and circuit optimization, JAPANESE JOURNAL OF APPLIED PHYSICS, 47巻, 4号, pp. 2560-2563, 200804
  4. Frequency dependence of measured metal oxide semiconductor field-effect transistor distortion characteristic, JAPANESE JOURNAL OF APPLIED PHYSICS, 47巻, 4号, pp. 2610-2615, 200804
  5. Capability of Electrothermal Simulation for Automotive Power Application Using Novel Laterally Diffused Metal Oxide Semiconductor Model, JAPANESE JOURNAL OF APPLIED PHYSICS, 48巻, 4号, 200904
  6. Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation, IEICE TRANSACTIONS ON ELECTRONICS, E92C巻, 5号, pp. 608-615, 200905
  7. Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors, IEICE TRANSACTIONS ON ELECTRONICS, E92C巻, 6号, pp. 777-784, 200906
  8. Effect of Carrier Transit Delay on Complementary Metal-Oxide-Semiconductor Switching Performance, JAPANESE JOURNAL OF APPLIED PHYSICS, 49巻, 4号, 2010
  9. Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors, JAPANESE JOURNAL OF APPLIED PHYSICS, 50巻, 4号, 201104
  10. Modeling of Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor for Accurate Prediction of Junction Condition on Device Characteristics, JAPANESE JOURNAL OF APPLIED PHYSICS, 50巻, 4号, 201104
  11. Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS Devices, IEEE TRANSACTIONS ON ELECTRON DEVICES, 58巻, 7号, pp. 2072-2080, 201107
  12. Compact Modeling of Expansion Effects in LDMOS, IEICE TRANSACTIONS ON ELECTRONICS, E95C巻, 11号, pp. 1817-1823, 201211
  13. Analysis and Modeling of Geometry Dependent Thermal Resistance in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors, JAPANESE JOURNAL OF APPLIED PHYSICS, 52巻, 4号, 201304
  14. The Second-Generation of HiSIM_HV Compact Models for High-Voltage MOSFETs, IEEE TRANSACTIONS ON ELECTRON DEVICES, 60巻, 2号, pp. 653-661, 201302
  15. Modeling of the Impurity-Gradient Effect in High-Voltage Laterally Diffused MOSFETs, IEEE TRANSACTIONS ON ELECTRON DEVICES, 60巻, 2号, pp. 684-690, 201302
  16. Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation, IEICE TRANSACTIONS ON ELECTRONICS, E96C巻, 5号, pp. 744-751, 201305
  17. Compact Modeling of Floating-Base Effect in Injection-Enhanced Insulated-Gate Bipolar Transistor Based on Potential Modification by Accumulated Charge, JAPANESE JOURNAL OF APPLIED PHYSICS, 52巻, 4号, 201304
  18. Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions, IEICE TRANSACTIONS ON ELECTRONICS, E96C巻, 10号, pp. 1339-1347, 201310
  19. Compact Modeling of SOI MOSFETs With Ultrathin Silicon and BOX Layers, IEEE TRANSACTIONS ON ELECTRON DEVICES, 61巻, 2号, pp. 255-265, 201402
  20. Compact modeling of injection-enhanced insulated-gate bipolar transistor for accurate circuit switching prediction, JAPANESE JOURNAL OF APPLIED PHYSICS, 53巻, 4号, 201404
  21. Compact Modeling of Injection Enhanced Insulated Gate Bipolar Transistor Valid for Optimization of Switching Frequency, IEICE TRANSACTIONS ON ELECTRONICS, E97C巻, 10号, pp. 1021-1027, 201410
  22. Degradation of 4H-SiC IGBT threshold characteristics due to SiC/SiO2 interface defects, SOLID-STATE ELECTRONICS, 101巻, pp. 126-130, 201411
  23. Compact modeling of injection-enhanced insulated-gate bipolar transistor for accurate circuit switching prediction, Jpn. J. Appl. Phys., 53巻, 4号, 20140314
  24. Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation, IEICE transactions on electronics, 96巻, 5号, pp. 744-751, 20130501
  25. Compact Modeling of Floating-Base Effect in Injection-Enhanced Insulated-Gate Bipolar Transistor Based on Potential Modification by Accumulated Charge, Jpn J Appl Phys, 52巻, 4号, pp. 04CP07-04CP07-5, 20130425
  26. Analysis and Modeling of Geometry Dependent Thermal Resistance in Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors, Jpn J Appl Phys, 52巻, 4号, pp. 04CC29-04CC29-5, 20130425
  27. Dynamic-Carrier-Distribution-Based Compact Modeling of p–i–n Diode Reverse Recovery Effects (Special Issue : Solid State Devices and Materials (1)), Jpn J Appl Phys, 51巻, 2号, pp. 02BP06-02BP06-4, 20120225
  28. Unified Reaction--Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect, Jpn J Appl Phys, 51巻, 2号, pp. 02BC07-02BC07-5, 20120225
  29. EV/HV電気回路シミュレーション用HiSIM-IGBTモデル開発, 電気学会研究会資料. SPC, 半導体電力変換研究会, 2011巻, 158号, pp. 91-95, 20111027
  30. EV/HV電気回路シミュレーション用HiSIM-IGBTモデル開発, 電気学会研究会資料. EDD, 電子デバイス研究会, 2011巻, 66号, pp. 91-95, 20111027
  31. 回路シミュレーション用IGBTモデル"HiSIM-IGBT"(プロセス・デバイス・回路シミュレーション及び一般), 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス, 109巻, 278号, pp. 23-27, 20091105
  32. Degradation of 4H-SiC IGBT threshold characteristics due to SiC/SiO2 interface defects, SOLID-STATE ELECTRONICS, 101巻, pp. 126-130, 2014
  33. Compact Modeling of Injection Enhanced Insulated Gate Bipolar Transistor Valid for Optimization of Switching Frequency, IEICE TRANSACTIONS ON ELECTRONICS, E97C巻, 10号, pp. 1021-1027, 2014
  34. ★, Modeling of SiC IGBT Turn-Off Behavior Valid for Over 5-kV Circuit Simulation, IEEE TRANSACTIONS ON ELECTRON DEVICES, 60巻, 2号, pp. 622-629, 2013
  35. ★, HiSIM-IGBT: A Compact Si-IGBT Model for Power Electronic Circuit Design, IEEE TRANSACTIONS ON ELECTRON DEVICES, 60巻, 2号, pp. 571-579, 2013
  36. Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors, Jpn J Appl Phys, 50巻, 4号, pp. 04DC12-04DC12-4, 20110425
  37. Surface-Potential-Based Metal–Oxide–Silicon-Varactor Model for RF Applications, Jpn J Appl Phys, 46巻, 4号, pp. 2091-2095, 20070430
  38. HiSIM2: Advanced MOSFET model valid for RF circuit simulation, IEEE TRANSACTIONS ON ELECTRON DEVICES, 53巻, 9号, pp. 1994-2007, 2006
  39. A carrier-transit-delay-based nonquasi-static MOSFET model for circuit simulation and its application to harmonic distortion analysis, IEEE TRANSACTIONS ON ELECTRON DEVICES, 53巻, 9号, pp. 2025-2034, 2006
  40. Laterally diffused metal oxide semiconductor model for device and circuit optimization, JAPANESE JOURNAL OF APPLIED PHYSICS, 47巻, 4号, pp. 2560-2563, 2008
  41. Frequency dependence of measured metal oxide semiconductor field-effect transistor distortion characteristic, JAPANESE JOURNAL OF APPLIED PHYSICS, 47巻, 4号, pp. 2610-2615, 2008
  42. Capability of Electrothermal Simulation for Automotive Power Application Using Novel Laterally Diffused Metal Oxide Semiconductor Model, JAPANESE JOURNAL OF APPLIED PHYSICS, 48巻, 4号, 2009
  43. Effect of Carrier Transit Delay on Complementary Metal-Oxide-Semiconductor Switching Performance, JAPANESE JOURNAL OF APPLIED PHYSICS, 49巻, 4号, 2010
  44. Modeling of Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor for Accurate Prediction of Junction Condition on Device Characteristics, JAPANESE JOURNAL OF APPLIED PHYSICS, 50巻, 4号, 2011
  45. Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS Devices, IEEE TRANSACTIONS ON ELECTRON DEVICES, 58巻, 7号, pp. 2072-2080, 2011
  46. Unified Reaction-Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect, JAPANESE JOURNAL OF APPLIED PHYSICS, 51巻, 2号, 2012
  47. Compact Modeling of Expansion Effects in LDMOS, IEICE TRANSACTIONS ON ELECTRONICS, E95C巻, 11号, pp. 1817-1823, 2012
  48. The Second-Generation of HiSIM_HV Compact Models for High-Voltage MOSFETs, IEEE TRANSACTIONS ON ELECTRON DEVICES, 60巻, 2号, pp. 653-661, 2013
  49. Modeling of the Impurity-Gradient Effect in High-Voltage Laterally Diffused MOSFETs, IEEE TRANSACTIONS ON ELECTRON DEVICES, 60巻, 2号, pp. 684-690, 2013
  50. Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation, IEICE TRANSACTIONS ON ELECTRONICS, E96C巻, 5号, pp. 744-751, 2013
  51. Analysis and Modeling of Geometry Dependent Thermal Resistance in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors, JAPANESE JOURNAL OF APPLIED PHYSICS, 52巻, 4号, 2013
  52. Compact Modeling of Floating-Base Effect in Injection-Enhanced Insulated-Gate Bipolar Transistor Based on Potential Modification by Accumulated Charge, JAPANESE JOURNAL OF APPLIED PHYSICS, 52巻, 4号, 2013
  53. Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions, IEICE TRANSACTIONS ON ELECTRONICS, E96C巻, 10号, pp. 1339-1347, 2013
  54. Compact Modeling of SOI MOSFETs With Ultrathin Silicon and BOX Layers, IEEE TRANSACTIONS ON ELECTRON DEVICES, 61巻, 2号, pp. 255-265, 2014
  55. Compact modeling of injection-enhanced insulated-gate bipolar transistor for accurate circuit switching prediction, JAPANESE JOURNAL OF APPLIED PHYSICS, 53巻, 4号, 2014
  56. Capability of Electrothermal Simulation for Automotive Power Application Using Novel Laterally Diffused Metal Oxide Semiconductor Model, Jpn J Appl Phys, 48巻, 4号, pp. 04C079-04C079-6, 20090425
  57. Effect of Carrier Transit Delay on Complementary Metal–Oxide–Semiconductor Switching Performance, Jpn J Appl Phys, 49巻, 4号, pp. 04DC15-04DC15-4, 20100425
  58. Modeling of Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor for Accurate Prediction of Junction Condition on Device Characteristics, Jpn J Appl Phys, 50巻, 4号, pp. 04DP03-04DP03-5, 20110425
  59. HiSIM-HV: A Compact Model for Simulation of High-Voltage MOSFET Circuits, IEEE TRANSACTIONS ON ELECTRON DEVICES, 57巻, 10号, pp. 2671-2678, 2010
  60. Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors, JAPANESE JOURNAL OF APPLIED PHYSICS, 50巻, 4号, 2011
  61. Dynamic-Carrier-Distribution-Based Compact Modeling of p-i-n Diode Reverse Recovery Effects, JAPANESE JOURNAL OF APPLIED PHYSICS, 51巻, 2号, 2012
  62. ★, Compact Modeling of the p-i-n Diode Reverse Recovery Effect Valid for both Low and High Current-Density Conditions, IEICE TRANSACTIONS ON ELECTRONICS, E95C巻, 10号, pp. 1682-1688, 2012
  63. Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation, IEICE transactions on electronics, 92巻, 5号, pp. 608-615, 20090501
  64. Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors, IEICE transactions on electronics, 92巻, 6号, pp. 777-784, 20090601
  65. ★, Compact Modeling of the p-i-n Diode Reverse Recovery Effect Valid for both Low and High Current-Density Conditions, IEICE transactions on electronics, 95巻, 10号, pp. 1682-1688, 20121001
  66. Compact Modeling of Expansion Effects in LDMOS, IEICE transactions on electronics, 95巻, 11号, pp. 1817-1823, 20121101
  67. HV-MOSFETのオーバーラップ領域における2次元効果のモデル化(プロセス・デバイス・回路シミュレーション及び一般), 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス, 110巻, 274号, pp. 53-57, 20101104
  68. MOSFETコンパクトモデルと今後の展開 : バルクMOSFETからマルチゲートMOSFETに向けて(プロセス・デバイス・回路シミュレーション及び一般), 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス, 109巻, 278号, pp. 1-6, 20091105
  69. Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation, IEICE Transactions on Electronics, 96巻, 5号, pp. 744-751, 2013
  70. Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions, IEICE Transactions on Electronics, 96巻, 10号, pp. 1339-1347, 2013
  71. Compact Modeling of Injection Enhanced Insulated Gate Bipolar Transistor Valid for Optimization of Switching Frequency, IEICE Transactions on Electronics, 97巻, 10号, pp. 1021-1027, 2014
  72. Laterally Diffused Metal Oxide Semiconductor Model for Device and Circuit Optimization, Jpn J Appl Phys, 47巻, 4号, pp. 2560-2563, 20080425
  73. Frequency Dependence of Measured Metal Oxide Semiconductor Field-Effect Transistor Distortion Characteristic, Jpn J Appl Phys, 47巻, 4号, pp. 2610-2615, 20080425

招待講演、口頭・ポスター発表等

  1. パワエレデバイスから電力システムまでの縦断的なシミュレーションの試み, 造賀 芳文, 三宅 正尭, MATLAB EXPO 2014 Japan, 2014年10月29日, 招待, 日本語, MathWorks, 東京
  2. Compact Modeling of the Reverse Recovery Effect in LDMOS Body Diode, M. Miyake, the 11th Int. Workshop on Compact Modeling (IWCM'14), 2014年01月, 招待, 英語, Singapore
  3. Compact Modeling of the Diode Reverse Recovery Effect for Leading Developments of Power Electronic Applications, M. Miyake, K. Matsuura, and A. Ueno, IEEE 10th Int. Conf. on ASIC (ASICON 2013), 2013年10月, 招待, 英語, IEEE, Shenzhen, China
  4. Surface-Potential-Based Power Device Modeling for Circuit Simulation and Its Applications, M. Miyake, SISPAD 2011 Companion Work Shop 2 on Prospects of Power Electronics and Power Devices, 2011年09月, 通常, 英語, Osaka
  5. Compact Modeling of the Punch-Through Effect in SiC-IGBT for 6.6kV Switching Operation with Improved Performance,, 三宅 正尭, The 9th European Conf. on Silicon Carbide & Related Materials (ECSCRM), 2012年, 通常, 英語
  6. Specific Features of SiC-IGBT with 13kV Switching, 三宅 正尭, The 24th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2012年, 通常, 英語
  7. Temperature Dependence of Switching Performance in IGBT Circuits and Its Compact Modeling, 三宅 正尭, The 23rd International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2011年, 通常, 英語, IEEE, San Diego
  8. Reverse-Recovery-Effect Modeling for p-i-n Diodes, 三宅 正尭, The 9th Int'l Workshop on Compact Modeling (IWCM), 2012年, 通常, 英語
  9. Dynamic-Carrier-Distribution-Based Compact Modeling of P-i-N Diode Reverse Recovery Effect, Junichi Nakashima, Masataka Miyake, Mitiko Miura-Mattausch, Int'l Conf. on Solid State Devices and Materials (SSDM), 2011年, 通常, 英語
  10. Modeling of Local Self-Heating Effect and Effective Temperature for Device Characteristics, 三宅 正尭, The 8th International Workshop on Compact Modeling (IWCM), 2011年, 通常, 英語
  11. The Flexible Compact SOI-MOSFET Model HiSIM-SOI Valid for Any Structural Types, Masataka Miyake, et al., Int'l Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 2011年, 通常, 英語
  12. A study on voltage source converter with synchronizing power for power system stabilization, Yuki Nakamura, Yutaka Sasaki, Yoshifumi Zoka, Naoto Yorino, Shinya Sekizaki, Masataka Miyake, The International Conference on Electrical Engineering (ICEE2015), 2015年07月05日, 通常, 英語, Hong Kong, China
  13. 擬似同期化力インバータを用いた系統安定化, 関崎真也, 中村優希,佐々木豊,造賀芳文,三宅正尭,餘利野直人, 第58回自動制御連合講演会, 2015年11月14日, 通常, 日本語
  14. 系統安定化を目的とした擬似同期化力VSCに関する検討, 中村優希, 伊藤壮汰,関崎真也,佐々木豊,造賀芳文,餘利野直人,三宅正尭, 電気学会 平成27年電力・エネルギー部門大会, 2015年08月25日, 通常, 日本語, 名古屋

社会活動

委員会等委員歴

  1. 平成25年度スマートコミュニティ構想普及支援事業「石内東地区セーフティスマートコミュニティ推進検討委員会」・オブザーバ, 2013年, 2014年

その他社会貢献活動(広大・部局主催含)

  1. Brief Introduction of HiSIM-Diode, 広島大学, HiSIM Forum 2012, 2012年/03月/07日, 2012年/03月/07日, 助言・指導
  2. 回路シミュレーション用MOSFETモデル"HiSIM"の基本と、そのIGBTモデル等への展開およびSiCデバイスへの応用, 大阪大学GCOEプログラムIDERユニット, 大阪大学GCOEプログラムIDERユニットミニセミナー, 2011年/08月, 2011年/08月, 社会人・一般
  3. Surface-Potential-Based Power Device Modeling for Circuit Simulation and Its Applications, SISPAD2011, SISPAD2011 Companion Workshop, 2011年/09月, 2011年/09月

学術雑誌論文査読歴

  1. 2021年, IEEE Transactions on Power Electronics, その他, 1
  2. 2019年, IEEE Transactions on Power Electronics, その他, 1
  3. 2019年, Japanese Journal of Applied Physics, その他, 1
  4. 2018年, IEEE Transactions on Power Electronics, その他, 1
  5. 2018年, Japanese Journal of Applied Physics, その他, 1
  6. 2016年, IEEE Transactions on Power Electronics, その他, 2
  7. 2016年, IEEE Transactions on Electron Devices, その他, 1
  8. 2015年, IEEE Transactions on Power Electronics, その他, 3
  9. 2015年, Japanese Journal of Applied Physics, その他, 2
  10. 2014年, IEEE Transactions on Power Delivery, その他, 1
  11. 2012年, IEEE Transactions on Electron Devices, その他, 2
  12. 2012年, Trans Tech Publications: Materials Science Forum, その他, 2