MASATAKA MIYAKE

Last Updated :2024/09/02

Affiliations, Positions
Research Institute for Nanodevices, Associate Professor
Web Site
https://www.rnbs.hiroshima-u.ac.jp/en/
E-mail
masataka-miyakehiroshima-u.ac.jp
Self-introduction
Research on Wireless Communication Networks

Basic Information

Major Professional Backgrounds

  • 2010/04/01, 2011/03/31, Hiroshima University, HiSIM Research Center, Assistant Professor
  • 2011/04/01, 2013/04/30, Hiroshima University, HiSIM Research Center, Lecturer
  • 2013/05/01, 2024/03/31, Hiroshima University, HiSIM Research Center, Associate Professor
  • 2024/04/01, Hiroshima University, Research Institute for Semiconductor Engineering, Associate Professor

Academic Degrees

  • Doctor of Engineering, Hiroshima University
  • Master of Engineering, Hiroshima University

Educational Activity

  • [Bachelor Degree Program] School of Engineering : Cluster 2(Electrical, Electronic and Systems Engineering) : Program of Electronic Devices and Systems
  • [Master's Program] Graduate School of Advanced Science and Engineering : Division of Advanced Science and Engineering : Quantum Matter Program
  • [Doctoral Program] Graduate School of Advanced Science and Engineering : Division of Advanced Science and Engineering : Quantum Matter Program

In Charge of Primary Major Programs

  • Electronic Devices and Systems

Research Fields

  • Engineering;Electrical and electronic engineering;Communication / Network engineering

Research Keywords

  • wireless communication networks, wireless signal processing, wireless communication architecture, radio-wave propagation, disaster resistance, space applications

Affiliated Academic Societies

  • IEEE Power Electronics Society, 2010
  • IEEE Electron Devices Society, 2011
  • IEEE Industry Applications Society, 2011

Educational Activity

Course in Charge

  1. 2024, Undergraduate Education, Year, Graduation Thesis
  2. 2024, Graduate Education (Master's Program) , 3Term, Advanced Power Electronics
  3. 2024, Graduate Education (Master's Program) , First Semester, Seminar on Electronics A
  4. 2024, Graduate Education (Master's Program) , Second Semester, Seminar on Electronics B
  5. 2024, Graduate Education (Master's Program) , Academic Year, Academic Presentation in Electronics
  6. 2024, Graduate Education (Master's Program) , 1Term, Exercises in Electronics A
  7. 2024, Graduate Education (Master's Program) , 2Term, Exercises in Electronics A
  8. 2024, Graduate Education (Master's Program) , 3Term, Exercises in Electronics B
  9. 2024, Graduate Education (Master's Program) , 4Term, Exercises in Electronics B
  10. 2024, Graduate Education (Master's Program) , Academic Year, Advanced Study in Quantum Matter
  11. 2024, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Quantum Matter

Research Activities

Academic Papers

  1. A carrier-transit-delay-based nonquasi-static MOSFET model for circuit simulation and its application to harmonic distortion analysis, IEEE TRANSACTIONS ON ELECTRON DEVICES, 53(9), 2025-2034, 200609
    Link to Paper Search Results by DOI
  2. HiSIM2 circuit simulation - Solving the speed versus accuracy crisis, IEEE CIRCUITS & DEVICES, 22(5), 29-38, 2006
    Link to Paper Search Results by DOI
  3. Laterally diffused metal oxide semiconductor model for device and circuit optimization, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 2560-2563, 200804
    Link to Paper Search Results by DOI
  4. Frequency dependence of measured metal oxide semiconductor field-effect transistor distortion characteristic, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 2610-2615, 200804
    Link to Paper Search Results by DOI
  5. Capability of Electrothermal Simulation for Automotive Power Application Using Novel Laterally Diffused Metal Oxide Semiconductor Model, JAPANESE JOURNAL OF APPLIED PHYSICS, 48(4), 200904
    Link to Paper Search Results by DOI
  6. ★, Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation, IEICE TRANSACTIONS ON ELECTRONICS, E92C(5), 608-615, 200905
    Link to Paper Search Results by DOI
  7. ★, Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors, IEICE TRANSACTIONS ON ELECTRONICS, E92C(6), 777-784, 200906
    Link to Paper Search Results by DOI
  8. Effect of Carrier Transit Delay on Complementary Metal-Oxide-Semiconductor Switching Performance, JAPANESE JOURNAL OF APPLIED PHYSICS, 49(4), 2010
    Link to Paper Search Results by DOI
  9. Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(4), 201104
    Link to Paper Search Results by DOI
  10. Modeling of Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor for Accurate Prediction of Junction Condition on Device Characteristics, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(4), 201104
    Link to Paper Search Results by DOI
  11. Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS Devices, IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(7), 2072-2080, 201107
    Link to Paper Search Results by DOI
  12. Compact Modeling of Expansion Effects in LDMOS, IEICE TRANSACTIONS ON ELECTRONICS, E95C(11), 1817-1823, 201211
    Link to Paper Search Results by DOI
  13. Analysis and Modeling of Geometry Dependent Thermal Resistance in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors, JAPANESE JOURNAL OF APPLIED PHYSICS, 52(4), 201304
    Link to Paper Search Results by DOI
  14. The Second-Generation of HiSIM_HV Compact Models for High-Voltage MOSFETs, IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(2), 653-661, 201302
    Link to Paper Search Results by DOI
  15. Modeling of the Impurity-Gradient Effect in High-Voltage Laterally Diffused MOSFETs, IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(2), 684-690, 201302
    Link to Paper Search Results by DOI
  16. Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation, IEICE TRANSACTIONS ON ELECTRONICS, E96C(5), 744-751, 201305
    Link to Paper Search Results by DOI
  17. Compact Modeling of Floating-Base Effect in Injection-Enhanced Insulated-Gate Bipolar Transistor Based on Potential Modification by Accumulated Charge, JAPANESE JOURNAL OF APPLIED PHYSICS, 52(4), 201304
    Link to Paper Search Results by DOI
  18. Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions, IEICE TRANSACTIONS ON ELECTRONICS, E96C(10), 1339-1347, 201310
    Link to Paper Search Results by DOI
  19. Compact Modeling of SOI MOSFETs With Ultrathin Silicon and BOX Layers, IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(2), 255-265, 201402
    Link to Paper Search Results by DOI
  20. Compact modeling of injection-enhanced insulated-gate bipolar transistor for accurate circuit switching prediction, JAPANESE JOURNAL OF APPLIED PHYSICS, 53(4), 201404
    Link to Paper Search Results by DOI
  21. Compact Modeling of Injection Enhanced Insulated Gate Bipolar Transistor Valid for Optimization of Switching Frequency, IEICE TRANSACTIONS ON ELECTRONICS, E97C(10), 1021-1027, 201410
    Link to Paper Search Results by DOI
  22. Degradation of 4H-SiC IGBT threshold characteristics due to SiC/SiO2 interface defects, SOLID-STATE ELECTRONICS, 101, 126-130, 201411
    Link to Paper Search Results by DOI
  23. Development of the HiSIM-IGBT model for EV/HV electric circuit simulation, 2011(158), 91-95, 20111027
  24. Development of the HiSIM-IGBT model for EV/HV electric circuit simulation, 2011(66), 91-95, 20111027
  25. HiSIM-IGBT : A Compact IGBT Model for Circuit Simulation, Technical report of IEICE. SDM, 109(278), 23-27, 20091105
  26. ★, Modeling of SiC IGBT Turn-Off Behavior Valid for Over 5-kV Circuit Simulation, IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(2), 622-629, 2013
    Link to Paper Search Results by DOI
  27. ★, HiSIM-IGBT: A Compact Si-IGBT Model for Power Electronic Circuit Design, IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(2), 571-579, 2013
    Link to Paper Search Results by DOI
  28. ★, Surface-Potential-Based Metal–Oxide–Silicon-Varactor Model for RF Applications, Jpn J Appl Phys, 46(4), 2091-2095, 20070430
  29. HiSIM2: Advanced MOSFET model valid for RF circuit simulation, IEEE TRANSACTIONS ON ELECTRON DEVICES, 53(9), 1994-2007, 2006
  30. Unified Reaction-Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect, JAPANESE JOURNAL OF APPLIED PHYSICS, 51(2), 2012
  31. HiSIM-HV: A Compact Model for Simulation of High-Voltage MOSFET Circuits, IEEE TRANSACTIONS ON ELECTRON DEVICES, 57(10), 2671-2678, 2010
  32. Dynamic-Carrier-Distribution-Based Compact Modeling of p-i-n Diode Reverse Recovery Effects, JAPANESE JOURNAL OF APPLIED PHYSICS, 51(2), 2012
  33. ★, Compact Modeling of the p-i-n Diode Reverse Recovery Effect Valid for both Low and High Current-Density Conditions, IEICE TRANSACTIONS ON ELECTRONICS, E95C(10), 1682-1688, 2012
    Link to Paper Search Results by DOI
  34. Modeling of 2D Bias Control in Overlap Region of High-Voltage MOSFETs, Technical report of IEICE. SDM, 110(274), 53-57, 20101104
  35. Compact MOSFET Model and Its Perspective : from bulk-MOSFETs to MG-MOSFETs, Technical report of IEICE. SDM, 109(278), 1-6, 20091105

Invited Lecture, Oral Presentation, Poster Presentation

  1. Compact Modeling of the Reverse Recovery Effect in LDMOS Body Diode, M. Miyake, the 11th Int. Workshop on Compact Modeling (IWCM'14), 2014/01, With Invitation, English, Singapore
  2. Compact Modeling of the Diode Reverse Recovery Effect for Leading Developments of Power Electronic Applications, M. Miyake, K. Matsuura, and A. Ueno, IEEE 10th Int. Conf. on ASIC (ASICON 2013), 2013/10, With Invitation, English, IEEE, Shenzhen, China
  3. Surface-Potential-Based Power Device Modeling for Circuit Simulation and Its Applications, M. Miyake, SISPAD 2011 Companion Work Shop 2 on Prospects of Power Electronics and Power Devices, 2011/09, Without Invitation, English, Osaka
  4. Compact Modeling of the Punch-Through Effect in SiC-IGBT for 6.6kV Switching Operation with Improved Performance,, Masataka Miyake, The 9th European Conf. on Silicon Carbide & Related Materials (ECSCRM), 2012, Without Invitation, English
  5. Specific Features of SiC-IGBT with 13kV Switching, Masataka Miyake, The 24th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2012, Without Invitation, English
  6. Temperature Dependence of Switching Performance in IGBT Circuits and Its Compact Modeling, Masataka Miyake, The 23rd International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2011, Without Invitation, English, IEEE, San Diego
  7. Reverse-Recovery-Effect Modeling for p-i-n Diodes, Masataka Miyake, The 9th Int'l Workshop on Compact Modeling (IWCM), 2012, Without Invitation, English
  8. Dynamic-Carrier-Distribution-Based Compact Modeling of P-i-N Diode Reverse Recovery Effect, Junichi Nakashima, Masataka Miyake, Mitiko Miura-Mattausch, Int'l Conf. on Solid State Devices and Materials (SSDM), 2011, Without Invitation, English
  9. Modeling of Local Self-Heating Effect and Effective Temperature for Device Characteristics, Masataka Miyake, The 8th International Workshop on Compact Modeling (IWCM), 2011, Without Invitation, English
  10. The Flexible Compact SOI-MOSFET Model HiSIM-SOI Valid for Any Structural Types, Masataka Miyake, et al., Int'l Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 2011, Without Invitation, English
  11. A study on voltage source converter with synchronizing power for power system stabilization, Yuki Nakamura, Yutaka Sasaki, Yoshifumi Zoka, Naoto Yorino, Shinya Sekizaki, Masataka Miyake, The International Conference on Electrical Engineering (ICEE2015), 2015/07/05, Without Invitation, English, Hong Kong, China
  12. 擬似同期化力インバータを用いた系統安定化, 関崎真也, 中村優希,佐々木豊,造賀芳文,三宅正尭,餘利野直人, 第58回自動制御連合講演会, 2015/11/14, Without Invitation, Japanese
  13. 系統安定化を目的とした擬似同期化力VSCに関する検討, 中村優希, 伊藤壮汰,関崎真也,佐々木豊,造賀芳文,餘利野直人,三宅正尭, 電気学会　平成27年電力・エネルギー部門大会, 2015/08/25, Without Invitation, Japanese, Nagoya

Social Activities

History as Peer Reviews of Academic Papers

  1. 2021, IEEE Transactions on Power Electronics, Others, 1
  2. 2019, IEEE Transactions on Power Electronics, Others, 1
  3. 2019, Japanese Journal of Applied Physics, Others, 1
  4. 2018, IEEE Transactions on Power Electronics, Others, 1
  5. 2018, Japanese Journal of Applied Physics, Others, 1
  6. 2016, IEEE Transactions on Power Electronics, Others, 2
  7. 2016, IEEE Transactions on Electron Devices, Others, 1
  8. 2015, IEEE Transactions on Power Electronics, Others, 3
  9. 2015, Japanese Journal of Applied Physics, Others, 2
  10. 2014, IEEE Transactions on Power Delivery, Others, 1
  11. 2012, IEEE Transactions on Electron Devices, Others, 2
  12. 2012, Trans Tech Publications: Materials Science Forum, Others, 2