MASATAKA MIYAKE

Last Updated :2021/04/14

Affiliations, Positions
HiSIM Research Center, Associate Professor
Web Site
E-mail
masataka-miyakehiroshima-u.ac.jp
Self-introduction
Research on compact models of power semiconductor devices for circuit simulation and its application to power electronic converters.

Basic Information

Major Professional Backgrounds

  • 2010/04/01, 2011/03/31, Hiroshima University, HiSIM Research Center, Assistant Professor
  • 2011/04/01, 2013/04/30, Hiroshima University, HiSIM Research Center, Lecturer
  • 2013/05/01, Hiroshima University, HiSIM Research Center, Associate Professor

Academic Degrees

  • Doctor of Engineering, Hiroshima University
  • Master of Engineering, Hiroshima University

Educational Activity

  • 【Master's Program】Graduate School of Advanced Science and Engineering : Division of Advanced Science and Engineering : Quantum Matter Program
  • 【Doctoral Program】Graduate School of Advanced Science and Engineering : Division of Advanced Science and Engineering : Quantum Matter Program

In Charge of Primary Major Programs

  • Electronic Devices and Systems

Research Fields

  • Engineering;Electrical and electronic engineering;Electron device / Electronic equipment
  • Engineering;Electrical and electronic engineering;Power engineering / Power conversion / Electric machinery
  • Interdisciplinary science and engineering;Computational science;Computational science

Research Keywords

  • compact modeling
  • IGBT
  • power diode

Affiliated Academic Societies

  • IEEE Power Electronics Society, 2010
  • IEEE Electron Devices Society, 2011
  • IEEE Industry Applications Society, 2011

Educational Activity

Course in Charge

  1. 2021, Graduate Education (Master's Program) , First Semester, Seminar on Electronics A
  2. 2021, Graduate Education (Master's Program) , Second Semester, Seminar on Electronics B
  3. 2021, Graduate Education (Master's Program) , Academic Year, Academic Presentation in Electronics
  4. 2021, Graduate Education (Master's Program) , 1Term, Exercises in Electronics A
  5. 2021, Graduate Education (Master's Program) , 2Term, Exercises in Electronics A
  6. 2021, Graduate Education (Master's Program) , 3Term, Exercises in Electronics B
  7. 2021, Graduate Education (Master's Program) , 4Term, Exercises in Electronics B
  8. 2021, Graduate Education (Master's Program) , Academic Year, Advanced Study in Quantum Matter
  9. 2021, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Quantum Matter

Research Activities

Academic Papers

  1. ★, HiSIM-IGBT: A Compact Si-IGBT Model for Power Electronic Circuit Design, IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(2), 571-579, 2013
  2. ★, Modeling of SiC IGBT Turn-Off Behavior Valid for Over 5-kV Circuit Simulation, IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(2), 622-629, 2013
  3. ★, Compact Modeling of the p-i-n Diode Reverse Recovery Effect Valid for both Low and High Current-Density Conditions, IEICE TRANSACTIONS ON ELECTRONICS, E95C(10), 1682-1688, 2012
  4. ★, Compact Modeling of the p-i-n Diode Reverse Recovery Effect Valid for both Low and High Current-Density Conditions, IEICE Trans. Electron., 95(10), 1682-1688, 20121001
  5. Dynamic-Carrier-Distribution-Based Compact Modeling of p--i--n Diode Reverse Recovery Effects, Jpn J Appl Phys, 51(2), 02BP06-02BP06-4, 20120225
  6. Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors, IEICE TRANSACTIONS ON ELECTRONICS, E92C(6), 777-784, 200906
  7. Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors, IEICE Trans. Electron., 92(6), 777-784, 20090601
  8. Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation, IEICE Trans. Electron., 92(5), 608-615, 20090501
  9. Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation, IEICE TRANSACTIONS ON ELECTRONICS, E92C(5), 608-615, 200905
  10. HiSIM2: Advanced MOSFET model valid for RF circuit simulation, IEEE TRANSACTIONS ON ELECTRON DEVICES, 53(9), 1994-2007, 2006
  11. A carrier-transit-delay-based nonquasi-static MOSFET model for circuit simulation and its application to harmonic distortion analysis, IEEE TRANSACTIONS ON ELECTRON DEVICES, 53(9), 2025-2034, 2006
  12. Laterally diffused metal oxide semiconductor model for device and circuit optimization, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 2560-2563, 2008
  13. Frequency dependence of measured metal oxide semiconductor field-effect transistor distortion characteristic, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 2610-2615, 2008
  14. Capability of Electrothermal Simulation for Automotive Power Application Using Novel Laterally Diffused Metal Oxide Semiconductor Model, JAPANESE JOURNAL OF APPLIED PHYSICS, 48(4), 2009
  15. Effect of Carrier Transit Delay on Complementary Metal-Oxide-Semiconductor Switching Performance, JAPANESE JOURNAL OF APPLIED PHYSICS, 49(4), 2010
  16. Modeling of Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor for Accurate Prediction of Junction Condition on Device Characteristics, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(4), 2011
  17. Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS Devices, IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(7), 2072-2080, 2011
  18. Unified Reaction-Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect, JAPANESE JOURNAL OF APPLIED PHYSICS, 51(2), 2012
  19. Compact Modeling of Expansion Effects in LDMOS, IEICE TRANSACTIONS ON ELECTRONICS, E95C(11), 1817-1823, 2012
  20. The Second-Generation of HiSIM_HV Compact Models for High-Voltage MOSFETs, IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(2), 653-661, 2013
  21. Modeling of the Impurity-Gradient Effect in High-Voltage Laterally Diffused MOSFETs, IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(2), 684-690, 2013
  22. Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation, IEICE TRANSACTIONS ON ELECTRONICS, E96C(5), 744-751, 2013
  23. Analysis and Modeling of Geometry Dependent Thermal Resistance in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors, JAPANESE JOURNAL OF APPLIED PHYSICS, 52(4), 2013
  24. Compact Modeling of Floating-Base Effect in Injection-Enhanced Insulated-Gate Bipolar Transistor Based on Potential Modification by Accumulated Charge, JAPANESE JOURNAL OF APPLIED PHYSICS, 52(4), 2013
  25. Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions, IEICE TRANSACTIONS ON ELECTRONICS, E96C(10), 1339-1347, 2013
  26. Compact Modeling of SOI MOSFETs With Ultrathin Silicon and BOX Layers, IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(2), 255-265, 2014
  27. Compact modeling of injection-enhanced insulated-gate bipolar transistor for accurate circuit switching prediction, JAPANESE JOURNAL OF APPLIED PHYSICS, 53(4), 2014
  28. Capability of Electrothermal Simulation for Automotive Power Application Using Novel Laterally Diffused Metal Oxide Semiconductor Model, Jpn J Appl Phys, 48(4), 04C079-04C079-6, 20090425
  29. Effect of Carrier Transit Delay on Complementary Metal–Oxide–Semiconductor Switching Performance, Jpn J Appl Phys, 49(4), 04DC15-04DC15-4, 20100425
  30. Modeling of Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor for Accurate Prediction of Junction Condition on Device Characteristics, Jpn J Appl Phys, 50(4), 04DP03-04DP03-5, 20110425
  31. A carrier-transit-delay-based nonquasi-static MOSFET model for circuit simulation and its application to harmonic distortion analysis, IEEE TRANSACTIONS ON ELECTRON DEVICES, 53(9), 2025-2034, 200609
  32. HiSIM2 circuit simulation - Solving the speed versus accuracy crisis, IEEE CIRCUITS & DEVICES, 22(5), 29-38, 2006
  33. Laterally diffused metal oxide semiconductor model for device and circuit optimization, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 2560-2563, 200804
  34. Frequency dependence of measured metal oxide semiconductor field-effect transistor distortion characteristic, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 2610-2615, 200804
  35. Capability of Electrothermal Simulation for Automotive Power Application Using Novel Laterally Diffused Metal Oxide Semiconductor Model, JAPANESE JOURNAL OF APPLIED PHYSICS, 48(4), 200904
  36. Effect of Carrier Transit Delay on Complementary Metal-Oxide-Semiconductor Switching Performance, JAPANESE JOURNAL OF APPLIED PHYSICS, 49(4), 2010
  37. Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(4), 201104
  38. Modeling of Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor for Accurate Prediction of Junction Condition on Device Characteristics, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(4), 201104
  39. Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS Devices, IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(7), 2072-2080, 201107
  40. Compact Modeling of Expansion Effects in LDMOS, IEICE TRANSACTIONS ON ELECTRONICS, E95C(11), 1817-1823, 201211
  41. Analysis and Modeling of Geometry Dependent Thermal Resistance in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors, JAPANESE JOURNAL OF APPLIED PHYSICS, 52(4), 201304
  42. The Second-Generation of HiSIM_HV Compact Models for High-Voltage MOSFETs, IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(2), 653-661, 201302
  43. Modeling of the Impurity-Gradient Effect in High-Voltage Laterally Diffused MOSFETs, IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(2), 684-690, 201302
  44. Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation, IEICE TRANSACTIONS ON ELECTRONICS, E96C(5), 744-751, 201305
  45. Compact Modeling of Floating-Base Effect in Injection-Enhanced Insulated-Gate Bipolar Transistor Based on Potential Modification by Accumulated Charge, JAPANESE JOURNAL OF APPLIED PHYSICS, 52(4), 201304
  46. Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions, IEICE TRANSACTIONS ON ELECTRONICS, E96C(10), 1339-1347, 201310
  47. Compact Modeling of SOI MOSFETs With Ultrathin Silicon and BOX Layers, IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(2), 255-265, 201402
  48. Compact modeling of injection-enhanced insulated-gate bipolar transistor for accurate circuit switching prediction, JAPANESE JOURNAL OF APPLIED PHYSICS, 53(4), 201404
  49. Compact Modeling of Injection Enhanced Insulated Gate Bipolar Transistor Valid for Optimization of Switching Frequency, IEICE TRANSACTIONS ON ELECTRONICS, E97C(10), 1021-1027, 201410
  50. Degradation of 4H-SiC IGBT threshold characteristics due to SiC/SiO2 interface defects, SOLID-STATE ELECTRONICS, 101, 126-130, 201411
  51. Compact modeling of injection-enhanced insulated-gate bipolar transistor for accurate circuit switching prediction, Jpn. J. Appl. Phys., 53(4), 20140314
  52. Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation, 96(5), 744-751, 20130501
  53. Compact Modeling of Floating-Base Effect in Injection-Enhanced Insulated-Gate Bipolar Transistor Based on Potential Modification by Accumulated Charge, Jpn J Appl Phys, 52(4), 04CP07-04CP07-5, 20130425
  54. Analysis and Modeling of Geometry Dependent Thermal Resistance in Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors, Jpn J Appl Phys, 52(4), 04CC29-04CC29-5, 20130425
  55. Unified Reaction--Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect, Jpn J Appl Phys, 51(2), 02BC07-02BC07-5, 20120225
  56. Development of the HiSIM-IGBT model for EV/HV electric circuit simulation, 2011(158), 91-95, 20111027
  57. Development of the HiSIM-IGBT model for EV/HV electric circuit simulation, 2011(66), 91-95, 20111027
  58. HiSIM-IGBT : A Compact IGBT Model for Circuit Simulation, Technical report of IEICE. SDM, 109(278), 23-27, 20091105
  59. Degradation of 4H-SiC IGBT threshold characteristics due to SiC/SiO2 interface defects, SOLID-STATE ELECTRONICS, 101, 126-130, 2014
  60. Compact Modeling of Injection Enhanced Insulated Gate Bipolar Transistor Valid for Optimization of Switching Frequency, IEICE TRANSACTIONS ON ELECTRONICS, E97C(10), 1021-1027, 2014
  61. Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors, Jpn J Appl Phys, 50(4), 04DC12-04DC12-4, 20110425
  62. Surface-Potential-Based Metal–Oxide–Silicon-Varactor Model for RF Applications, Jpn J Appl Phys, 46(4), 2091-2095, 20070430
  63. HiSIM-HV: A Compact Model for Simulation of High-Voltage MOSFET Circuits, IEEE TRANSACTIONS ON ELECTRON DEVICES, 57(10), 2671-2678, 2010
  64. Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(4), 2011
  65. Dynamic-Carrier-Distribution-Based Compact Modeling of p-i-n Diode Reverse Recovery Effects, JAPANESE JOURNAL OF APPLIED PHYSICS, 51(2), 2012
  66. Compact Modeling of Expansion Effects in LDMOS, IEICE Trans. Electron., 95(11), 1817-1823, 20121101
  67. Modeling of 2D Bias Control in Overlap Region of High-Voltage MOSFETs, Technical report of IEICE. SDM, 110(274), 53-57, 20101104
  68. Compact MOSFET Model and Its Perspective : from bulk-MOSFETs to MG-MOSFETs, Technical report of IEICE. SDM, 109(278), 1-6, 20091105
  69. Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation, IEICE Trans. Electron., 96(5), 744-751, 2013
  70. Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions, IEICE Trans. Electron., 96(10), 1339-1347, 2013
  71. Compact Modeling of Injection Enhanced Insulated Gate Bipolar Transistor Valid for Optimization of Switching Frequency, IEICE Trans. Electron., 97(10), 1021-1027, 2014
  72. Laterally Diffused Metal Oxide Semiconductor Model for Device and Circuit Optimization, Jpn J Appl Phys, 47(4), 2560-2563, 20080425
  73. Frequency Dependence of Measured Metal Oxide Semiconductor Field-Effect Transistor Distortion Characteristic, Jpn J Appl Phys, 47(4), 2610-2615, 20080425

Invited Lecture, Oral Presentation, Poster Presentation

  1. Compact Modeling of the Reverse Recovery Effect in LDMOS Body Diode, M. Miyake, the 11th Int. Workshop on Compact Modeling (IWCM'14), 2014/01, With Invitation, English, Singapore
  2. Compact Modeling of the Diode Reverse Recovery Effect for Leading Developments of Power Electronic Applications, M. Miyake, K. Matsuura, and A. Ueno, IEEE 10th Int. Conf. on ASIC (ASICON 2013), 2013/10, With Invitation, English, IEEE, Shenzhen, China
  3. Surface-Potential-Based Power Device Modeling for Circuit Simulation and Its Applications, M. Miyake, SISPAD 2011 Companion Work Shop 2 on Prospects of Power Electronics and Power Devices, 2011/09, Without Invitation, English, Osaka
  4. Compact Modeling of the Punch-Through Effect in SiC-IGBT for 6.6kV Switching Operation with Improved Performance,, Masataka Miyake, The 9th European Conf. on Silicon Carbide & Related Materials (ECSCRM), 2012, Without Invitation, English
  5. Specific Features of SiC-IGBT with 13kV Switching, Masataka Miyake, The 24th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2012, Without Invitation, English
  6. Temperature Dependence of Switching Performance in IGBT Circuits and Its Compact Modeling, Masataka Miyake, The 23rd International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2011, Without Invitation, English, IEEE, San Diego
  7. Reverse-Recovery-Effect Modeling for p-i-n Diodes, Masataka Miyake, The 9th Int'l Workshop on Compact Modeling (IWCM), 2012, Without Invitation, English
  8. Dynamic-Carrier-Distribution-Based Compact Modeling of P-i-N Diode Reverse Recovery Effect, Junichi Nakashima, Masataka Miyake, Mitiko Miura-Mattausch, Int'l Conf. on Solid State Devices and Materials (SSDM), 2011, Without Invitation, English
  9. Modeling of Local Self-Heating Effect and Effective Temperature for Device Characteristics, Masataka Miyake, The 8th International Workshop on Compact Modeling (IWCM), 2011, Without Invitation, English
  10. The Flexible Compact SOI-MOSFET Model HiSIM-SOI Valid for Any Structural Types, Masataka Miyake, et al., Int'l Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 2011, Without Invitation, English
  11. A study on voltage source converter with synchronizing power for power system stabilization, Yuki Nakamura, Yutaka Sasaki, Yoshifumi Zoka, Naoto Yorino, Shinya Sekizaki, Masataka Miyake, The International Conference on Electrical Engineering (ICEE2015), 2015/07/05, Without Invitation, English, Hong Kong, China
  12. 擬似同期化力インバータを用いた系統安定化, 関崎真也, 中村優希,佐々木豊,造賀芳文,三宅正尭,餘利野直人, 第58回自動制御連合講演会, 2015/11/14, Without Invitation, Japanese
  13. 系統安定化を目的とした擬似同期化力VSCに関する検討, 中村優希, 伊藤壮汰,関崎真也,佐々木豊,造賀芳文,餘利野直人,三宅正尭, 電気学会 平成27年電力・エネルギー部門大会, 2015/08/25, Without Invitation, Japanese, Nagoya

Social Activities

History as Peer Reviews of Academic Papers

  1. 2015, IEEE Transactions on Power Electronics, Others, 3
  2. 2016, IEEE Transactions on Power Electronics, Others, 1
  3. 2014, IEEE Transactions on Power Delivery, Others, 1
  4. 2015, Japanese Journal of Applied Physics, Others, 2