VUONG VAN CUONGVAN CUONG VUONG

Last Updated :2024/05/07

所属・職名
ナノデバイス研究所　特任助教
メールアドレス
vuongvancuonghiroshima-u.ac.jp
自己紹介
He received the B.S. in Education of Physics from Hanoi National University of Education in 2007, in 2010, he received M.S. degrees in Electronics and Telecommunication Technology from the Vietnam National University, Hanoi, Vietnam, and he got Ph.D. degree Semiconductor Electronics and Integration Science from Hiroshima University, Hiroshima, Japan, in 2020. From 2007, he has become a Lecturer at Faculty of Physics in Hanoi National University of Education. Since 2020, he has been an Assistant Professor with the Research Institute for Nano Device and Bio Systems in Hiroshima University, Hiroshima, Japan. His field of research is process technology, device design, high temperature as well as high radiation reliability of analog and digital integrated electronic circuits based on SiC.

基本情報

主な職歴

  • 2020年, Hiroshima University, Research Institute for Nanodevice and Bio Systems, Assistant Professor
  • 2008年, Hanoi National University of Education, Lecturer

学歴

  • Hanoi National University of Education, 2003年, 2007年
  • University of Engineering and Technology, 2008年, 2010年
  • 広島大学, 2017年, 2020年

学位

  • 修士（Electronics-Telecommunication Technology）　(ベトナム国家大学)

研究分野

  • 工学 / 電気電子工学 / 電子デバイス・電子機器

研究キーワード

  • Silicon Carbide Integrated Circuits and Devices/ Silicon Carbide Power Semiconductor Devices and Module/Harsh Environments Electronics

所属学会

  • The Japan Society of Applied Physics
    関連URL

研究活動

学術論文（★は代表的な論文）

  1. Amplifier Based on 4H-SiC MOSFET Operation at 500oC for Harsh Environment Applications, IEEE TRANSACTIONS ON ELECTRON DEVICES, 69巻, 8号, pp. 4194-4199, 2022
  2. CF4:O2 surface etching for the improvement of contact resistance and high-temperature reliability in Ni/Nb ohmic contacts on n-type 4H-SiC, Japanese Journal of Applied Physics, 59巻, 5号, pp. 056501-1-056501-6, 202004
  3. Influence of Ni and Nb thickness on low specific contact resistance and high-temperature reliability of ohmic contacts to 4H-SiC, Japanese Journal of Applied Physics, 58巻, 11号, pp. 116501-1-116501-8, 2019
  4. High-temperature reliability of Ni/Nb ohmic contacts on 4H-SiC for harsh environment applications, Thin Solid Films, 669巻, pp. 306-314, 2019
  5. High-temperature reliability of integrated circuit based on 4H-SiC MOSFET with Ni/Nb ohmic contacts for harsh environment applications, JAPANESE JOURNAL OF APPLIED PHYSICS, 59巻, 12号, 20201201

招待講演、口頭・ポスター発表等

  1. Parameter Extraction from Transfer Characteristics Measurement of 4H-SiC MOSFET in Extremely High Temperature Ambient, The 19th International Conference on Silicon Carbide and Related Materials, 2022年, 通常, 英語, The International Conference on Silicon Carbide and Related Materials Committees, Davos, Switzerland
  2. Bias temperature stress instability in 4H-SiC capacitors with different metal gate in extremely high temperature environment, The 19th International Conference on Silicon Carbide and Related Materials, 2022年, 通常, 英語, The International Conference on Silicon Carbide and Related Materials Committees, Davos, Switzerland
  3. Investigation Trap Density in Oxide Layer of 4H-SiC MOS Capacitor During Long-Time Aging at 400℃ Ambient, The 69th Japan Society of Applied Physics Spring Meeting, 2022年, 通常, 英語, The Japan Society of Applied Physics, Online
  4. High-Temperature Operation of 4H-SiC MOSFETs Based Differential Amplifier for Harsh Environment Applications, International Workshop on Nanodevice Technologies, 2022年, 通常, 英語, Research Institute for Nanodevices, Hiroshima University, Research Institute for Nanodevices, Hiroshima University
  5. Thermal Reliability of Ni/Nb Ohmic Contact on n-type 4H-SiC at 500℃, The 12th IDEA Collaboration Symposium, 2022年, 通常, 英語, Ministry of Education, Culture, Sports, Science and Technology, Online
  6. Operation of Differential Amplifier based on 4H-SiC MOSFETs at 500℃, The 12th IDEA Collaboration Symposium, 2022年, 通常, 英語, Ministry of Education, Culture, Sports, Science and Technology, Online
  7. 500 degC Operation Characteristics of 4H-SiC MOSFETs Differential Amplifier Circuit for Harsh Environment Applications, Vuong Van Cuong, Tatsuya Meguro, Kazuya Kawamura, Takuma Shima, Shin-Ichiro Kuroki, The 13th European Conference on Silicon Carbide and Related Materials, 2021年, 招待, 英語, Committee of European Conference on Silicon Carbide and Related Materials, Tours, France
  8. High-Temperature Reliability of Integrated Electronic Circuit Based on 4H-SiC MOSFET with TiN Metal Gate, Vuong Van Cuong, Tatsuya Meguro, Shin-Ichiro Kuroki, The 13th European Conference on Silicon Carbide and Related Materials, 2021年, 通常, 英語, Committee of European Conference on Silicon Carbide and Related Materials, Tours, France
  9. 4H-SiC MOSFET based Technology for High-Temperature Electronic Healthcare Applications, Vuong Van Cuong, Tatsuya Meguro, Shin-Ichiro Kuroki, The 6th International Symposium on Biomedical Engineering, 2021年, 通常, 英語, Ministry of Education, Culture, Sports, Science and Technology, Japan, Online
  10. Operation Characteristics at 500 degC of 4H-SiC MOSFET Amplifier After Long Time Aging at 400 degC, Vuong Van Cuong, Tatsuya Meguro, and Shin-Ichiro Kuroki, The 8th Meeting on Advanced Power Semiconductors, 2021年, 通常, 英語, Committee of Advanced Power of Semiconductors, Online
  11. High-Temperature Operation of Differential Amplifier Based on 4H-SiC MOSFETs for Harsh Environment Applications, Van Vuong Cuong, Tatsuya Meguro, Tadashi Sato, Shin-Ichiro Kuroki, The 82nd JSAP Autumn Meeting 2021, 2021年, 通常, 英語, The Japan Society of Applied Physics, Online
  12. High-Temperature Reliability at 400 degC of Integrated Electronic Circuit Based on 4H-SiC MOSFET with TiN Metal Gate, Van Vuong Cuong , Tatsuya Meguro, Shin-Ichiro Kuroki, The 82nd JSAP Autumn Meeting 2021, 2021年, 通常, 英語, The Japan Society of Applied Physics, Online
  13. Thermal Reliability of 4H-SiC Devices and Integrated Circuit Based on 4H-SiC MOSFET at 400ºC, The 4th International Symposium on Biomedical Engineering（ISBE2019）, 2019年, 通常, 英語, Research Center for Biomedical Engineering, Shizuoka University, Japan
  14. Improve the High-Temperature Reliability at 500℃ of Ni/Nb/4H-SiC Ohmic Contact with CF4:O2 Surface Treatment, The 68th JSAP Spring Meeting, 2021年, 通常, 英語, The Japan Society of Applied Physics (JSAP), Japan
  15. 400℃ High-Temperature Reliability of 4H-SiC MOS Capacitor with TiN Metal Gate, The 17th Thin Film Materials and Devices Meeting, 2020年, 通常, 英語, Thin Film Materials and Devices Meeting Organizing Committee, Japan
  16. Characterization of 4H-SiC MOS Capacitors with Different Metal Gates after 400°C High-Temperature Aging Tests, The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019), 2019年, 通常, 英語, ICSCRM organizing committee, Kyoto, Japan
  17. High Temperature Reliability of 4H-SiC Devices and Single Stage 4H-SiC MOSFET Amplifier at 400ºC, The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019), 2019年, 通常, 英語, ICSCRM organizing committee, Kyoto, Japan
  18. Optimization of Ni/Nb Ratio for High-Temperature-Reliable Ni/Nb Silicide Ohmic Contact on 4H-SiC, The 12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018), 2018年, 通常, 英語, ECSCRM organizing committee, United Kingdom
  19. Investigation of CF4:O2 Surface Etching in Ni/Nb Ohmic Contact on 4H-SiC for Harsh Environment Applications, The 4th Meeting on Advanced Power Semiconductors, 2019年, 通常, 英語, The Japan Society of Applied Physics (JSAP), Yokahama
  20. High Temperature Reliable Ni/Nb Ohmic Contacts to 4H-SiC for Harsh Environment Applications, International Workshop on Nanodevice Technologies 2018, 2018年, 通常, 英語, Research Institute for Nanodevice and Bio Systems, Hiroshima University, Hiroshima
  21. Low Specific Contact Resistance TiNb Ohmic Contacts to 4H-SiC with Laser Annealing for Harsh Environment Applications, The 79th Japan Society of Applied Physics Autumn Meeting, 2018年, 通常, 英語, The Japan Society of Applied Physics (JSAP), Nagoya
  22. High-Temperature Reliability of Ni/Nb Ohmic Contacts on 4H-SiC for Harsh Environment Applications, The 65th JSAP Spring Meeting, 2018年, 通常, 英語, The Japan Society of Applied Physics (JSAP), Tokyo
  23. Dependence of Nb Thickness on the Ni/Nb Ohmic Contacts on 4H-SiC for Harsh Environment Applications, The 13th Meeting of The Japan Society of Applied Physics Chugoku Shikoku, 2018年, 通常, 英語, The Japan Society of Applied Physics (JSAP), Hiroshima
  24. Research on 400°C Thermal Stability of Ni/Nb Ohmic Contacts on 4H-SiC for Harsh Environment Applications, The 4th Meeting on Advanced Power Semiconductors, 2017年, 通常, 英語, The Japan Society of Applied Physics (JSAP), Nagoya

社会活動

学術雑誌論文査読歴

  1. 2021年, Applied Physics Express, その他, Reviewer