VAN CUONG VUONG

Last Updated :2024/07/03

Affiliations, Positions
Research Institute for Nanodevices, Assistant Professor (Special Appointment)
E-mail
vuongvancuonghiroshima-u.ac.jp
Self-introduction
He received the B.S. in Education of Physics from Hanoi National University of Education in 2007, in 2010, he received M.S. degrees in Electronics and Telecommunication Technology from the Vietnam National University, Hanoi, Vietnam, and he got Ph.D. degree Semiconductor Electronics and Integration Science from Hiroshima University, Hiroshima, Japan, in 2020. From 2007, he has become a Lecturer at Faculty of Physics in Hanoi National University of Education. Since 2020, he has been an Assistant Professor with the Research Institute for Nano Device and Bio Systems in Hiroshima University, Hiroshima, Japan. His field of research is process technology, device design, high temperature as well as high radiation reliability of analog and digital integrated electronic circuits based on SiC.

Basic Information

Major Professional Backgrounds

  • 2020, Hiroshima University, Research Institute for Nanodevice and Bio Systems, Assistant Professor
  • 2008, Hanoi National University of Education, Lecturer

Educational Backgrounds

  • Hanoi National University of Education, Faculty of Physics, Bachelor of Science in Physics, Vietnam, 2003, 2007
  • University of Engineering and Technology, Electronics and Telecommunications, Electronics and Telecommunications, Vietnam, 2008, 2010
  • Hiroshima University, Semiconductor Electronic and Integration Science, Advanced Science of Matter, Japan, 2017, 2020

Academic Degrees

  • Vietnam National University

Research Fields

  • Engineering;Electrical and electronic engineering;Electron device / Electronic equipment

Research Keywords

  • Silicon Carbide Integrated Circuits and Devices/ Silicon Carbide Power Semiconductor Devices and Module/Harsh Environments Electronics

Affiliated Academic Societies

  • The Japan Society of Applied Physics

Research Activities

Academic Papers

  1. ★, Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model, Japanese Journal of Applied Physics, 63(1), 015503-1-015503-9, 20240112
    Link to Paper Search Results by DOI
  2. ★, Amplifier Based on 4H-SiC MOSFET Operation at 500oC for Harsh Environment Applications, IEEE TRANSACTIONS ON ELECTRON DEVICES, 69(8), 4194-4199, 20220629
  3. CF4:O2 surface etching for the improvement of contact resistance and high-temperature reliability in Ni/Nb ohmic contacts on n-type 4H-SiC, Japanese Journal of Applied Physics, 59(5), 056501-1-056501-6, 202004
  4. Influence of Ni and Nb thickness on low specific contact resistance and high-temperature reliability of ohmic contacts to 4H-SiC, Japanese Journal of Applied Physics, 58(11), 116501-1-116501-8, 2019
  5. High-temperature reliability of Ni/Nb ohmic contacts on 4H-SiC for harsh environment applications, Thin Solid Films, 669, 306-314, 2019
  6. High-temperature reliability of integrated circuit based on 4H-SiC MOSFET with Ni/Nb ohmic contacts for harsh environment applications, JAPANESE JOURNAL OF APPLIED PHYSICS, 59(12), 20201201

Invited Lecture, Oral Presentation, Poster Presentation

  1. High-Temperature Characterization of Interface and Near-Interface Traps in 4H-SiC MOS Capacitor with Full-Distributed Circuit Model, V. V. Cuong, T. Meguro, S. Ishikawa, H. Sezaki, T. Maeda and S.-I. Kuroki, International Conference on Silicon Carbide and Related Materials (ICSCRM), 2023, Without Invitation, English, International Conference on Silicon Carbide and Related Materials (ICSCRM) Committee, Sorrento, Italia
  2. Gamma-ray irradiation effects on 4H-SiC n/p MOSFETs with POA treatment, T. Ozaki, V. V. Cuong, A. Takeyama, T. Ohshima, K. Kojima, Y. Tanaka and S.-I. Kuroki, International Conference on Silicon Carbide and Related Materials (ICSCRM), 2023, Without Invitation, English, International Conference on Silicon Carbide and Related Materials (ICSCRM) Committee, Sorrento, Italia
  3. 500degC High-Temperature Characteristics of TiN-gate SiC n/p MOSFETs, S. Hiramoto, V. V. Cuong, S. Ishikawa, H. Sezaki, T. Maeda and S.-I. Kuroki, International Conference on Silicon Carbide and Related Materials (ICSCRM), 2023, Without Invitation, English, International Conference on Silicon Carbide and Related Materials (ICSCRM) Committee, Sorrento, Italia
  4. High-Temperature Electronics for Harsh Environment Applications, [17]. V. V. Cuong, T. Meguro, S. Ishikawa, T. Maeda, H. Sezaki, and S.-I. Kuroki, The 24th Takayanagi Kenjiro Memorial Symposium, 2022, With Invitation, English, Shizuoka University, Shizuoka University
  5. Parameter Extraction from Transfer Characteristics Measurement of 4H-SiC MOSFET in Extremely High Temperature Ambient, The 19th International Conference on Silicon Carbide and Related Materials, 2022, Without Invitation, English, The International Conference on Silicon Carbide and Related Materials Committees, Davos, Switzerland
  6. Bias temperature stress instability in 4H-SiC capacitors with different metal gate in extremely high temperature environment, The 19th International Conference on Silicon Carbide and Related Materials, 2022, Without Invitation, English, The International Conference on Silicon Carbide and Related Materials Committees, Davos, Switzerland
  7. Investigation Trap Density in Oxide Layer of 4H-SiC MOS Capacitor During Long-Time Aging at 400degC Ambient, The 69th Japan Society of Applied Physics Spring Meeting, 2022, Without Invitation, English, The Japan Society of Applied Physics, Online
  8. High-Temperature Operation of 4H-SiC MOSFETs Based Differential Amplifier for Harsh Environment Applications, International Workshop on Nanodevice Technologies, 2022, Without Invitation, English, Research Institute for Nanodevices, Hiroshima University, Research Institute for Nanodevices, Hiroshima University
  9. Thermal Reliability of Ni/Nb Ohmic Contact on n-type 4H-SiC at 500degC, The 12th IDEA Collaboration Symposium, 2022, Without Invitation, English, Ministry of Education, Culture, Sports, Science and Technology, Online
  10. Operation of Differential Amplifier based on 4H-SiC MOSFETs at 500degC, The 12th IDEA Collaboration Symposium, 2022, Without Invitation, English, Ministry of Education, Culture, Sports, Science and Technology, Online
  11. 500 degC Operation Characteristics of 4H-SiC MOSFETs Differential Amplifier Circuit for Harsh Environment Applications, Vuong Van Cuong, Tatsuya Meguro, Kazuya Kawamura, Takuma Shima, Shin-Ichiro Kuroki, The 13th European Conference on Silicon Carbide and Related Materials, 2021, With Invitation, English, Committee of European Conference on Silicon Carbide and Related Materials, Tours, France
  12. High-Temperature Reliability of Integrated Electronic Circuit Based on 4H-SiC MOSFET with TiN Metal Gate, Vuong Van Cuong, Tatsuya Meguro, Shin-Ichiro Kuroki, The 13th European Conference on Silicon Carbide and Related Materials, 2021, Without Invitation, English, Committee of European Conference on Silicon Carbide and Related Materials, Tours, France
  13. 4H-SiC MOSFET based Technology for High-Temperature Electronic Healthcare Applications, Vuong Van Cuong, Tatsuya Meguro, Shin-Ichiro Kuroki, The 6th International Symposium on Biomedical Engineering, 2021, Without Invitation, English, Ministry of Education, Culture, Sports, Science and Technology, Japan, Online
  14. Operation Characteristics at 500 degC of 4H-SiC MOSFET Amplifier After Long Time Aging at 400 degC, Vuong Van Cuong, Tatsuya Meguro, and Shin-Ichiro Kuroki, The 8th Meeting on Advanced Power Semiconductors, 2021, Without Invitation, English, Committee of Advanced Power of Semiconductors, Online
  15. High-Temperature Operation of Differential Amplifier Based on 4H-SiC MOSFETs for Harsh Environment Applications, Van Vuong Cuong, Tatsuya Meguro, Tadashi Sato, Shin-Ichiro Kuroki, The 82nd JSAP Autumn Meeting 2021, 2021, Without Invitation, English, The Japan Society of Applied Physics, Online
  16. High-Temperature Reliability at 400 degC of Integrated Electronic Circuit Based on 4H-SiC MOSFET with TiN Metal Gate, Van Vuong Cuong , Tatsuya Meguro, Shin-Ichiro Kuroki, The 82nd JSAP Autumn Meeting 2021, 2021, Without Invitation, English, The Japan Society of Applied Physics, Online
  17. Thermal Reliability of 4H-SiC Devices and Integrated Circuit Based on 4H-SiC MOSFET at 400ºC, 2019, Without Invitation, English, Research Center for Biomedical Engineering, Shizuoka University, Japan
  18. Improve the High-Temperature Reliability at 500oC of Ni/Nb/4H-SiC Ohmic Contact with CF4:O2 Surface Treatment, The 68th JSAP Spring Meeting, 2021, Without Invitation, English, The Japan Society of Applied Physics (JSAP), Japan
  19. 400oC High-Temperature Reliability of 4H-SiC MOS Capacitor with TiN Metal Gate, The 17th Thin Film Materials and Devices Meeting, 2020, Without Invitation, English, Thin Film Materials and Devices Meeting Organizing Committee, Japan
  20. Characterization of 4H-SiC MOS Capacitors with Different Metal Gates after 400oC High-Temperature Aging Tests, The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019), 2019, Without Invitation, English, ICSCRM organizing committee, Kyoto, Japan
  21. High Temperature Reliability of 4H-SiC Devices and Single Stage 4H-SiC MOSFET Amplifier at 400oC, The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019), 2019, Without Invitation, English, ICSCRM organizing committee, Kyoto, Japan
  22. Optimization of Ni/Nb Ratio for High-Temperature-Reliable Ni/Nb Silicide Ohmic Contact on 4H-SiC, The 12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018), 2018, Without Invitation, English, ECSCRM organizing committee, United Kingdom
  23. Investigation of CF4:O2 Surface Etching in Ni/Nb Ohmic Contact on 4H-SiC for Harsh Environment Applications, The 4th Meeting on Advanced Power Semiconductors, 2019, Without Invitation, English, The Japan Society of Applied Physics (JSAP), Yokahama
  24. High Temperature Reliable Ni/Nb Ohmic Contacts to 4H-SiC for Harsh Environment Applications, International Workshop on Nanodevice Technologies 2018, 2018, Without Invitation, English, Research Institute for Nanodevice and Bio Systems, Hiroshima University, Hiroshima
  25. High-Temperature Reliability of Ni/Nb Ohmic Contacts on 4H-SiC for Harsh Environment Applications, The 65th JSAP Spring Meeting, 2018, Without Invitation, English, The Japan Society of Applied Physics (JSAP), Tokyo
  26. Dependence of Nb Thickness on the Ni/Nb Ohmic Contacts on 4H-SiC for Harsh Environment Applications, The 13th Meeting of The Japan Society of Applied Physics Chugoku Shikoku, 2018, Without Invitation, English, The Japan Society of Applied Physics (JSAP), Hiroshima
  27. Research on 400oC Thermal Stability of Ni/Nb Ohmic Contacts on 4H-SiC for Harsh Environment Applications, The 4th Meeting on Advanced Power Semiconductors, 2017, Without Invitation, English, The Japan Society of Applied Physics (JSAP), Nagoya

Social Activities

History as Peer Reviews of Academic Papers

  1. 2021, Applied Physics Express, Others, Reviewer