Seiichirou Higashi

Last Updated :2017/09/01

Affiliations, Positions
Graduate School of Advanced Sciences of Matter, ., Professor
E-mail
sehigahiroshima-u.ac.jp

Basic Information

Academic Degrees

  • Doctor of Engineering, Tokyo University of Agriculture and Technology
  • Master of Science, Kyushu University

Research Fields

  • Interdisciplinary science and engineering;Applied physics;Plasma electronics
  • Engineering;Electrical and electronic engineering;Electron device / Electronic equipment

Research Keywords

  • low-temperautre process technology
  • thin-film transistor
  • polycrystalline silicon

Educational Activity

Course in Charge

  1. 2017, Undergraduate Education, First Semester, Solid State Physics
  2. 2017, Undergraduate Education, First Semester, Exercise of Electromagnetism I
  3. 2017, Undergraduate Education, Second Semester, Electronic Material Engineering
  4. 2017, Graduate Education (Master's Program) , Year, Seminar on Integrated Circuits and Process Engineering
  5. 2017, Graduate Education (Master's Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration Science I
  6. 2017, Graduate Education (Master's Program) , Year, Advanced Study in Semiconductor Electronics and Integration Science I
  7. 2017, Graduate Education (Master's Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration Science I
  8. 2017, Graduate Education (Master's Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration Science I
  9. 2017, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration ScienceII
  10. 2017, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration ScienceII
  11. 2017, Graduate Education (Doctoral Program) , Year, Advanced Study in Semiconductor Electronics and Integration ScienceII
  12. 2017, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration ScienceII
  13. 2017, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration ScienceII
  14. 2017, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration ScienceII

Research Activities

Academic Papers

  1. Activation of As Atoms in Ultrashallow Junction during Milli- and Microsecond Annealing Induced by Thermal-Plasma-Jet Irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(4), APR 2011
  2. Investigation of silicon grain structure and electrical characteristics of TFTs fabricated using different crystallized silicon films by atmospheric pressure micro-thermal-plasma-jet irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS, 53(3), MAR 2014
  3. Low-temperature layer transfer of midair cavity silicon films to a poly(ethylene terephthalate) substrate by meniscus force, JAPANESE JOURNAL OF APPLIED PHYSICS, 53(1), JAN 2014
  4. Investigations on crack generation mechanism and crack reduction by buffer layer insertion in thermal-plasma-jet crystallization of amorphous silicon films on glass substrate, JAPANESE JOURNAL OF APPLIED PHYSICS, 54(1), JAN 2015
  5. Meniscus-force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substrates, JAPANESE JOURNAL OF APPLIED PHYSICS, 54(4), 04DA08-1-04DA08-5, APR 2015
  6. High-efficiency impurity activation by precise control of cooling rate during atmospheric pressure thermal plasma jet annealing of 4H-SiC wafer, JAPANESE JOURNAL OF APPLIED PHYSICS, 54(6), 06GC01-1-06GC01-8, JUN 2015
  7. Formation of silicon-on-insulator layer with midair cavity for meniscus force-mediated layer transfer and high-performance transistor fabrication on glass, JAPANESE JOURNAL OF APPLIED PHYSICS, 54(8), 086503-1-086503-7, AUG 2015