Seiichirou Higashi

Last Updated :2019/04/09

Affiliations, Positions
Graduate School of Advanced Sciences of Matter, ., Professor
E-mail
sehigahiroshima-u.ac.jp

Basic Information

Academic Degrees

  • Doctor of Engineering, Tokyo University of Agriculture and Technology
  • Master of Science, Kyushu University

Research Fields

  • Interdisciplinary science and engineering;Applied physics;Plasma electronics
  • Engineering;Electrical and electronic engineering;Electron device / Electronic equipment

Research Keywords

  • low-temperautre process technology
  • thin-film transistor
  • polycrystalline silicon

Educational Activity

Course in Charge

  1. 2019, Undergraduate Education, 4Term, Electronic Material Engineering
  2. 2019, Undergraduate Education, 1Term, Solid State Physics
  3. 2019, Graduate Education (Master's Program) , Year, Seminar on Integrated Circuits and Process Engineering
  4. 2019, Graduate Education (Master's Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration Science I
  5. 2019, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Semiconductor Electronics and Integration ScienceII

Research Activities

Academic Papers

  1. Activation of As Atoms in Ultrashallow Junction during Milli- and Microsecond Annealing Induced by Thermal-Plasma-Jet Irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(4), 201104
  2. Native Oxidation Growth on Ge(111) and (100) Surfaces, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(4), 201104
  3. Formation of High-Density Pt Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing Using Thermal Plasma Jet for Floating Gate Memory, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(8), 201108
  4. The Impact of Y Addition into TiO2 on Electronic States and Resistive Switching Characteristics, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(6), 201106
  5. Impact of Annealing Ambience on Resistive Switching in Pt/TiO2/Pt Structure, IEICE TRANSACTIONS ON ELECTRONICS, E94C(5), 699-704, 201105
  6. Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities, IEICE TRANSACTIONS ON ELECTRONICS, E94C(5), 717-723, 201105
  7. X-ray Photoelectron Spectroscopy Study of Interfacial Reactions between Metal and Ultrathin Ge Oxide, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(10), 201110
  8. Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium-Yttrium Mixed Oxide, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(10), 201110
  9. Fabrication of High-Performance Thin-Film Transistors on Glass Substrate by Atmospheric Pressure Micro-Thermal-Plasma-Jet-Induced Lateral Crystallization Technique, JAPANESE JOURNAL OF APPLIED PHYSICS, 51(2), 201202
  10. Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering, IEICE TRANSACTIONS ON ELECTRONICS, E95C(5), 879-884, 201205
  11. Evaluation of Chemical Bonding Features and Resistance Switching Behaviors of Ultrathin Si Oxide Dielectric Sandwiched Between Pt Electrodes, JAPANESE JOURNAL OF APPLIED PHYSICS, 51(6), 201206
  12. High-Quality SiO2/Si Interface Formation and Its Application to Fabrication of Low-Temperature-Processed Polycrystalline Si Thin-Film Transistor, Japanese Journal of Applied Physics, 41(6A), 3646-3650, 20020601
  13. Pulsed-Laser-Induced Microcrystallization and Amorphization of Silicon Thin Films, Japanese Journal of Applied Physics, 40(2A), 480-485, 20010201
  14. Low Temperature Formation of Device Quality SiO2/Si Interfaces Using Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition, Japanese Journal of Applied Physics, 40(6A), 4171-4175, 20010601
  15. Electrical Properties of Pulsed Laser Crystallized Lightly Doped Polycrystalline Silicon Films, Japanese Journal of Applied Physics, 38(8A), L857-L860, 19990801
  16. Improvement of Electrical Properties of Pulsed Laser Crystallized Silicon Films by Oxygen Plasma Treatment, Japanese Journal of Applied Physics, 39(4A), 1656-1659, 20000401
  17. Development of High-Performance Polycrystalline Silicon Thin-Film Transistors (TFTs) Using Defect Control Process Technologies, IEEE Electron Device Letters, 23(7), 407-409, 20020701
  18. Stress in Pulsed-Laser Crystallized Silicon Films, Japanese Journal of Applied Physics, 40(2A), 731-735, 20010201
  19. Heat Treatment with High-Pressure H2O Vapor of Pulsed Laser Crystallized Silicon Films, Japanese Journal of Applied Physics, 39(7A), 3883-3887
  20. Electrical Properties of Pulsed Laser Crystallized Silicon Films, European Journal of Applied Physiology, 38(4A), 1892-1897, 19990401
  21. High Quality Gate-SiOx and SiOx/Si Interface Formation at Low Temperature Using Plasma-Enhanced Chemical Vapor Deposition, Jpn. J. Appl. Phys., 42, L814-L817, 20030401
  22. Effect of Chemical Composition of SiOx Films on Rapid Formation of Si Nanocrystals Induced by Thermal Plasma Jet Irradiation, Phys. Status Solidi, C7(3-4), 732-734, 2010
  23. Characterization of Interfaces between Chemically-Cleaned or Thermally-Oxidized Germanium and Metals, ECS Trans, 33(6), 253-262, 2010
  24. Formation of Pseudo-Expitaxial Ge Films on Si(100) by Droplet of Ge Microliquid, ECS Trans, 33(6), 165-170, 2010
  25. Control of Schottky Barrier Height at Al/p-Ge Junctions by Ultrathin Layer Insertion, ECS Trans, 50(9), 449.-457, 2012
  26. Grain Growth Control during Micro-Thermal-Plasma-Jet Irradiation Using Amorphous Si Strips and Slit Masks, ECS Trans, 50(8), 29-34, 2012
  27. Kinetics of thermally oxidation of Ge(100) surface, J. Phys.Conf. Series, 417(1), 2013
  28. Layer Transfer and Simultaneous Activation of Phosphorous Atoms in Silicon Films by Near-Infrared Semiconductor Diode Laser Irradiation, Mat. Res. Soc.Symp. Proc., 1426, 275-280, 2012
  29. Layer Transfer and Simultaneous Crystallization of Amorphous Si Films with Mid-Air Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation, ECS Trans, 50(8), pp. 43-48, 20121001
  30. Electrical characterization of Ge microcrystallites by atomic force microscopy using a conducting probe, THIN SOLID FILMS, 457(1), 103-108, 20040601
  31. Impact of rapid thermal O-2 anneal on dielectric stack structures of hafnium aluminate and silicon dioxide formed on Si(100), JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(11B), 7831-7836, 200411
  32. Characterization of interfacial oxide layers in heterostructures of hafnium oxides formed on NH3-nitrided Si(100), JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(11B), 7890-7894, 200411
  33. Characterization of atom diffusion in polycrystalline Si/SiGe/Si stacked gate, IEICE TRANSACTIONS ON ELECTRONICS, E88C(4), 646-650, 200504
  34. Application of plasma jet crystallization technique to fabrication of thin-film transistor, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 44(1-7), L108-L110, 2005
  35. Characterization of germanium nanocrystallites grown on SiO2 by a conductive AFM probe technique, IEICE TRANSACTIONS ON ELECTRONICS, E88C(4), 705-708, 200504
  36. A new crystallization technique of Si films on glass substrate using thermal plasma jet, APPLIED SURFACE SCIENCE, 244(1-4), 8-11, 20050515
  37. Formation of microcrystalline germanium (mu c-Ge : H) films from inductively coupled plasma CVD, APPLIED SURFACE SCIENCE, 244(1-4), 12-15, 20050515
  38. Influence of substrate dc bias on crystallinity of silicon films grown at a high rate from inductively-coupled plasma CVD, APPLIED SURFACE SCIENCE, 244(1-4), 39-42, 20050515
  39. Control of the nucleation density of Si quantum dots by remote hydrogen plasma treatment, APPLIED SURFACE SCIENCE, 244(1-4), 75-78, 20050515
  40. Pulsed laser crystallization of very thin silicon films, THIN SOLID FILMS, 487(1-2), 63-66, 20050901
  41. Crystallization of Si films on glass substrate using thermal plasma jet, THIN SOLID FILMS, 487(1-2), 122-125, 20050901
  42. Pulsed laser annealing of thin silicon films, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(4A), 2437-2440, 200604
  43. In-situ observation of rapid crystalline growth induced by excimer laser irradiation to Ge/Si stacked structure, THIN SOLID FILMS, 508(1-2), 53-56, 20060605
  44. Characterization of electronic charged states of P-doped Si quantum dots using AFM/Kelvin probe, THIN SOLID FILMS, 508(1-2), 186-189, 20060605
  45. Decay characteristics of electronic charged states of Si quantum dots as evaluated by an AFM/Kelvin probe technique, THIN SOLID FILMS, 508(1-2), 190-194, 20060605
  46. Crystallization of Si in millisecond time domain induced by thermal plasma jet irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(5B), 4313-4320, 200605
  47. Analysis of transient temperature profile during thermal plasma jet annealing of si films on quartz substrate, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(5B), 4355-4357, 200605
  48. Control of substrate surface temperature in millisecond annealing technique using thermal plasma jet, THIN SOLID FILMS, 515(12), 4897-4900, 20070423
  49. Growth of crystallized ge films from VHF inductively-coupled plasma of H-2-diluted GeH4, THIN SOLID FILMS, 515(12), 4971-4974, 20070423
  50. Evaluation of dielectric reliability of ultrathin HfSiOxNy in metal-gate capacitors, IEICE TRANSACTIONS ON ELECTRONICS, E90C(5), 962-967, 200705
  51. Melting and solidification of microcrystalline Si films induced by semiconductor diode laser irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(3B), 1276-1279, 200703
  52. Characterization of chemical bonding features and defect state density in HfSiOxNy/SiO2 gate stack, MICROELECTRONIC ENGINEERING, 84(9-10), 2386-2389, 2007
  53. Nucleation study of hydrogenated microcrystalline silicon (mu c-Si : H) films deposited by VHF-ICP, THIN SOLID FILMS, 516(11), 3497-3501, 20080401
  54. Crystallization of amorphous Ge films induced by semiconductor diode laser annealing, THIN SOLID FILMS, 516(11), 3595-3600, 20080401
  55. Effect of He addition on the heating characteristics of substrate surface irradiated by Ar thermal plasma jet, THIN SOLID FILMS, 516(11), 3680-3683, 20080401
  56. In-situ measurement of temperature variation in Si wafer during millisecond rapid thermal annealing induced by thermal plasma jet irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 2460-2463, 200804
  57. Self-assembling formation of Ni nanodots on SiO2 induced by remote H-2 plasma treatment and their electrical charging characteristics, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 3099-3102, 200804
  58. Characterization of multistep electron charging and discharging of a silicon quantum dots floating gate by applying pulsed gate biases, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 3103-3106, 200804
  59. Growth of Si crystalline in SiOx films induced by millisecond rapid thermal annealing using thermal plasma jet, SOLID-STATE ELECTRONICS, 52(3), 377-380, 200803
  60. Progress on charge distribution in multiply-stacked Si quantum dots/SiO2 structure as evaluated by AFM/KFM, IEICE TRANSACTIONS ON ELECTRONICS, E91C(5), 712-715, 200805
  61. Formation of Low-Defect-Concentration Polycrystalline Silicon Films by Thermal Plasma Jet Crystallization Technique, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(8), 6949-6952, 200808
  62. Low temperature high-rate growth of crystalline Ge films on quartz and crystalline Si substrates from VHF inductively-coupled plasma of GeH(4), THIN SOLID FILMS, 517(1), 216-218, 20081103
  63. Impact of impurity doping into Si quantum dots with Ge core on their electrical charging characteristics, THIN SOLID FILMS, 517(1), 306-308, 20081103
  64. Millisecond Rapid Thermal Annealing of Si Wafer Induced by High-Power-Density Thermal Plasma Jet Irradiation and Its Application to Ultrashallow Junction Formation, JAPANESE JOURNAL OF APPLIED PHYSICS, 48(4), 200904
  65. Characterization of interfacial reaction and chemical bonding features of LaOx/HfO2 stack structure formed on thermally-grown SiO2/Si(100), MICROELECTRONIC ENGINEERING, 86(7-9), 1650-1653, 2009
  66. Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication, APPLIED PHYSICS EXPRESS, 3(6), 2010
  67. Formation of High-Quality SiO2 and SiO2/Si Interface by Thermal-Plasma-Jet-Induced Millisecond Annealing and Postmetallization Annealing, JAPANESE JOURNAL OF APPLIED PHYSICS, 49(8), 201008
  68. Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Technique, JAPANESE JOURNAL OF APPLIED PHYSICS, 49(3), 2010
  69. Activation of B and As in Ultrashallow Junction During Millisecond Annealing Induced by Thermal Plasma Jet Irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS, 49(4), 2010
  70. Formation mechanism of metal nanodots induced by remote plasma exposure, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 12(3), 626-630, 201003
  71. Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor Fabrication, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(3), 201103
  72. Characterization of chemical bonding features at metal/GeO2 Interfaces by X-ray photoelectron spectroscopy, MICROELECTRONIC ENGINEERING, 88(7), 1549-1552, 201107
  73. Impact of insertion of ultrathin TaOx, layer at the Pt/TiO2 interface on resistive switching characteristics, MICROELECTRONIC ENGINEERING, 88(7), 1152-1154, 201107
  74. Direct observation of grain growth from molten silicon formed by micro-thermal-plasma-jet irradiation, APPLIED PHYSICS LETTERS, 101(17), 20121022
  75. Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer, IEICE TRANSACTIONS ON ELECTRONICS, E96C(5), 674-679, 201305
  76. Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior, IEICE TRANSACTIONS ON ELECTRONICS, E96C(5), 702-707, 201305
  77. Layer Transfer and Simultaneous Crystallization Technique for Amorphous Si Films with Midair Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation and Its Application to Thin-Film Transistor Fabrication, JAPANESE JOURNAL OF APPLIED PHYSICS, 52(5), 201305
  78. Leading Wave Crystallization Induced by Micro-Thermal-Plasma-Jet Irradiation of Amorphous Silicon Films, JAPANESE JOURNAL OF APPLIED PHYSICS, 52(5), 201305
  79. Investigation of silicon grain structure and electrical characteristics of TFTs fabricated using different crystallized silicon films by atmospheric pressure micro-thermal-plasma-jet irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS, 53(3), 201403
  80. Highly-Crystallized Ge:H Film Growth from GeH4 Very High Frequency Inductively-Coupled Plasma: Crystalline Nucleation Initiated by Ni Nanodots, JAPANESE JOURNAL OF APPLIED PHYSICS, 52(11), 201311
  81. Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide Resistive Random Access Memories with Ti-Based Electrodes, JAPANESE JOURNAL OF APPLIED PHYSICS, 52(11), 201311
  82. Fabricating metal-oxide-semiconductor field-effect transistors on a polyethylene terephthalate substrate by applying low-temperature layer transfer of a single-crystalline silicon layer by meniscus force, APPLIED PHYSICS LETTERS, 103(23), 20131202
  83. Low-temperature layer transfer of midair cavity silicon films to a poly(ethylene terephthalate) substrate by meniscus force, JAPANESE JOURNAL OF APPLIED PHYSICS, 53(1), 201401
  84. A technique for local area transfer and simultaneous crystallization of amorphous silicon layer with midair cavity by irradiation with near-infrared semiconductor diode laser, JAPANESE JOURNAL OF APPLIED PHYSICS, 53(4), 201404
  85. Fabrication of N-channel single crystalline silicon (100) thin-film transistors on glass substrate by meniscus force-mediated layer transfer technique, JAPANESE JOURNAL OF APPLIED PHYSICS, 53(10), 201410
  86. Improvement in Characteristic Variability of TFTs Using Grain Growth Control by Micro Thermal Plasma Jet Irradiation on a-Si Strips, JOURNAL OF DISPLAY TECHNOLOGY, 10(11), 950-955, 201411
  87. Investigations on crack generation mechanism and crack reduction by buffer layer insertion in thermal-plasma-jet crystallization of amorphous silicon films on glass substrate, JAPANESE JOURNAL OF APPLIED PHYSICS, 54(1), 201501
  88. Meniscus-force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substrates, JAPANESE JOURNAL OF APPLIED PHYSICS, 54(4), 04DA08-1-04DA08-5, 201504
  89. High-efficiency impurity activation by precise control of cooling rate during atmospheric pressure thermal plasma jet annealing of 4H-SiC wafer, JAPANESE JOURNAL OF APPLIED PHYSICS, 54(6), 06GC01-1-06GC01-8, 201506
  90. Pre-Amorphization and Low-Temperature Implantation for Efficient Activation of Implanted As in Ge(100), ECS Trans, 64(6), 423-429, 20141001
  91. Fabricating High-Performance Silicon Thin-Film Transistor by Meniscus Force Mediated Layer Transfer Technique, ECS Trans, 64(10), 17-22, 20141001
  92. Effect of Grain Growth Control by Atmospheric Micro-Thermal- Plasma-Jet Crystallization of Amorphous Silicon Strips on TFT Characteristics, ECS Trans, 64(10), 23-29, 20141001
  93. Formation of silicon-on-insulator layer with midair cavity for meniscus force-mediated layer transfer and high-performance transistor fabrication on glass, JAPANESE JOURNAL OF APPLIED PHYSICS, 54(8), 086503-1-086503-7, 201508
  94. High-temperature and high-speed oxidation of 4H-SiC by atmospheric pressure thermal plasma jet, JAPANESE JOURNAL OF APPLIED PHYSICS, 56(4), 201704
  95. Generation of ultra high-power thermal plasma jet and its application to crystallization of amorphous silicon films, JAPANESE JOURNAL OF APPLIED PHYSICS, 56(6), 201706
  96. Extremely high-power-density atmospheric-pressure thermal plasma jet generated by the nitrogen-boosted effect, JAPANESE JOURNAL OF APPLIED PHYSICS, 57(6), 201806
  97. Estimation of Phosphorus-implanted 4H-SiC Layer Recrystallization by EBSD Pattern Analysis, Mat. Sci. Forum, 821-823, 391-394, 2015
  98. Properties of Al Ohmic Contacts to n-type 4H-SiC Employing a Phosphorus-Doped and Crystallized Amorphous-Silicon Interlayer, Mat. Sci. Forum, 778-780, 649-652, 2014
  99. XPS Study of Energy Band Alignment between Hf-La Oxides and Si(100), Trans. Mat. Res. Soc. Jpn.,, 38(3), 353-357, 2013
  100. Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM Diodes, ECS Trans.,, 58(9), 293-300, 2013
  101. Determination of Energy Band Alignment in Ultrathin Hf-based Oxide/Pt System, J. Phys. Conf. Ser.,, 417(1)
  102. Characterization of Ultrathin Ta-oxide Films Formed on Ge(100) by ALD and Layer-by-Layer Methods, J. Phys,Conf. Ser.,, 417(1), 2013
  103. Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories, IEICE Trans. on Electronics, E92-C(5), 616-619, 2009
  104. Surface Potential Changes Induced by Physisorption of Si-tagged Protein A on HF-last Si(100) and Thermally Grown SiO2 surface, ECS Trans.,, 19(22), 35-43, 2009
  105. Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique, Trans. MRS-J.,, 34(2), 309-312, 2009
  106. Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Annealing and Its Application to Floating Gate Memory, ECS Trans.,, 16(9), 177-182, 2008
  107. In-situ Monitoring of Si Wafer Temperature during Millisecond Rapid Thermal Annealing, ECS Trans.,, 13(1), 31-36, 2008
  108. Evaluation of Chemical Bonding Features and Resistance Switching Behaviors of Ultrathin Si Oxide Dielectric Sandwiched Between Pt Electrodes, JAPANESE JOURNAL OF APPLIED PHYSICS, 51(6S), 2012
  109. Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO2, ECS. Trans.,, 16(10), 255-260, 2008
  110. Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots, Solid State Phenomena, 121-123, 557-560, 2007
  111. Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique, Mat. Sci. Forum, 561-565, 1213-1216, 2007
  112. High Rate Growth of Highly-Crystallized Ge Films on Quartz from VHF Inductively-Coupled Plasma of GeH4 + H2, Mat. Sci. Forum, 561-565, 1209-1212, 2007
  113. Electrical Characteristics of Lightly-Doped Si Films Crsytallized by Thermal Plasma Jet Irradiation, Trans. Mat. Res. Soc. Jpn.,, 32, 465-468, 2007
  114. Fabrication of Polycrystalline Si Thin Film Transistor Using Plasma Jet Crystalliztion Technique, Trans. Mat. Res. Soc. Jpn.,, 30, 283-286, 2005
  115. Study of Charged States of Si Quantum Dots with Ge Core, Electrochem. Soc. Trans.,, 3(7), 257-262, 2006
  116. Fabrication of Multiply-Stacked Si Quantum Dots for Floating Gate MOS Devices, Trans. Mat. Res. Soc. Jpn.,, 31, 133-136, 2006
  117. Multistep Electron Charging to and Discharging from Silicon-Quantum-Dots Floating Gate in nMOSFETs, Trans. Mat. Res. Soc. Jpn.,, 31, 137-140, 2006
  118. Characterization of FUSI-PtSi Formed on Ultrathin HfO2/Si(100) by Photoelectron Spectroscopy, Trans. Mat. Res. Soc. Jpn.,, 31, 145-148, 2006
  119. Nitridation of Ge(100) Surfaces by Vacuum-ultra violet (VUV) Irradiation in NH3 Ambience, Trans. Mat. Res. Soc. Jpn.,, 31, 153-156, 2006
  120. Impact of Nitrogen Incorporation into Yittrium Oxide on Chemical Bonding Features and Electrical Properties, Trans. Mat. Res. Soc. Jpn.,, 31, 157-160, 2006
  121. Photoemission Study of Ultrathin HfSiON/Si(100) Systems, Trans. Mat. Res. Soc. Jpn.,, 31, 125-128, 2006
  122. Photoemission Study of Ultrathin GeO2/Ge Heterostructures Formed by UV-O3 Oxidation, J. of Surf. Sci. and Nanotech.,, 4, 174-179, 2006
  123. Electrical Characterization of HfAlOx/SiON Dielectric Gate Capacitors, Trans. Mat. Res. Soc. Jpn.,, 30, 205-208, 2005
  124. Characterization of Charge Trapping and Dielectric Breakdown of HfAlOX/SiON Dielectric Gate Stack, Electrochem. Soc. Trans.,, 1(1), 163-172, 2005
  125. Single-grain Si TFTs with ECR-PECVD gate SiO2, IEEE Trans. Electron Devices,, 51, 500-502, 2004
  126. Defect control Process Technologies for High-Performance Polycrystalline Si Thin-Film Transistor Fabrication, Solid State Phenomena, 93, 49-54, 2003
  127. Analysis of free-carrier optical absorption used for characterization of microcrystalline silicon films, Solar Energy Mat. & Solar Cells, 66, 389-395, 2001
  128. Characterization of pulsed laser crystallization of silicon thin film, Solar Energy Mat. & Solar Cells, 66, 381-387, 2001
  129. Reduction of defects of polycrystalline silicon thin films by heat treatment with high-pressure H2O vapor, Solar Energy Mat. & Solar Cells, 66, 577-583, 2001
  130. Stochastic Electron Acceleration by an Electron Cyclotron Wave Propagating in an Inhomogeneous Magnetic Field, J. Phys. Soc. Jpn.,, 65(9), 2860-2866, 1996
  131. New Microwave Launcher for Producing ECR Plasmas without Window Contamination I. Excitation of Electron Cyclotron Wave, JAPANESE JOURNAL OF APPLIED PHYSICS, 32(4), 1818-1821, 1993
  132. Overdense Plasma Production Using Electron Cyclotron Waves, J. Phys. Soc. Jpn.,, 60(5), 1600-1607, 1991

Publications such as books

  1. THIN FILM TRANSISTORS Materials and processes Volume 2 Polycrystalline Silicon Thin Film Transistors , Kluwer Academic Publisher (Dordrecht), 2004

Invited Lecture, Oral Presentation, Poster Presentation

  1. Atmospheric Pressure Plasma Processing and Layer Transfer Technique for Thin-Film Device Fabrication on Glass and Plastic Substrates, S. Higashi, 2014 Int. Workshop Junction Tech. (IWJT-2014), 2014/05/18, With Invitation, Shanghai, China
  2. Silicon CMOS on glass and plastic - Crystallization and layer transfer approaches -, S. Higashi, Semiconductor Tech. Ultra Large Scale Integrated Circuits and Thin Film Transistors V, 2015/06/14, With Invitation
  3. Activation of Impurity Atoms in 4H-SiC Wafer by Atmospheric Pressure Thermal Plasma Jet Irradiation, S. Higashi, 16th International Workshop on Junction Technology (IWJT2016 ), 2016/05/09, With Invitation, Shanghai, China
  4. Atmospheric pressure micro-thermal-plasma-jet irradiation on amorphous germaniumstrips and its application to thin film transistor fabrication, S. Higashi, H. Harada, T. Nakatani, 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016), 2016/07/04, Without Invitation, Hakodate, Japan
  5. Low Temperature Formation of SiNx Encapsulation Films by Remote Plasma Enhanced Chemical Vapor Deposition, S. Higashi, M. Wei, T. Kanamaru, 24th Int.Display Workshops (IDW'17), 2017/12/06, Without Invitation, Sapporo, Japan
  6. Nitrogen-boosted Atmospheric Pressure Thermal-Plasma-Jet Generation and Its Application to Crystallization of Amorphous Silicon Films on Flexible Glass, S. Higashi, Int. Thin-Film Transistor Conf. (ITC2018), 2018/02/28, With Invitation, Guangzhou, China
  7. Low-Temperature Formation of Single-Crystalline Silicon on Glass and Plastic Substrates and Its Application to MOSFET Fabrication, S. Higashi, K. Sakaike, S. Hayashi, S. Morisaki, M. Akazawa, S. Nakamura, and T. Fukunaga, Int. Display Workshops (IDW'13), 2013/12/04, With Invitation, Sapporo, Japan
  8. Growth Control of Crystalline Silicon during Microsecond Phase Transformation and Its Application to Thin-Film Transistor Fabrication, S. Higashi, S. Hayashi, S. Morisaki, and Y. Fujita, AMFPD13, 2013/06/26, With Invitation, Kyoto, Japan
  9. Application of Atmospheric Pressure Micro-Thermal-Plasma-Jet to Ultra Rapid Thermal Annealing for Semiconductor Device Fabrication, S. Higashi, Int. Workshop Junction Tech. (IWJT-2012), 2012/05/14, With Invitation, Shanghai, China
  10. Rapid Thermal Annealing by Atmospheric Pressure Micro-thermal–Plasma–jet and Its Application to Thin FilmTransistor Fabrication –Crystallization Doping, and Reliability Improvement, S. Higashi, 2012 Mat. Res. Soc. Spring Meeting, 2012/04/09, With Invitation, San Francisco, USA
  11. Fabrication of High Performance TFTs by Atmospheric Pressure Micro-thermal-plasma-jet Induced Lateral Crystallization Technique, S. Higashi, S. Hayashi, Y. Nishida, and R. Matsubara, 2011 Mat. Res. Soc. Spring Meeting, 2011/04/25, Without Invitation, San Francisco, USA
  12. Millisecond Annealing Induced by Atmospheric Pressure Thermal Plasma Jet Irradiation and Its Application to Ultra Shallow Junction Formation, S. Higashi, 2010 Int. Workshop Junction Tech. (IWJT-2010), 2010/05/10, With Invitation, Shanghai, China
  13. Control of Growth Orientation during Rapid Solidification of Si Microliquid, S. Higashi, N. Koba, T. Matsumoto, and S. Miyazaki, 23rd Int. Conf. Amorphous Nanocrystalline Semiconductors (ICANS23), 2009/08/23, Without Invitation, Utrecht, Netherlands
  14. Millisecond Thermal Processing for TFT and ULSI, S. Higashi, Semiconductor Tech. Ultra Large Scale Integrated Circuits and Thin Film Transistors II, 2009/07/05, With Invitation, Xi'an,China
  15. Application of Thermal Plasma Jet to Crystallization of Amorphous Si Films on Glass Substrate and Thin Film Transistor Fabrication, S. Higashi, 6th Asian-European Int. Conf. Plasma Surf. Eng. (AEPSE 2007) Workshop on Flat-panel and Flexible Devices, 2007/09/28, With Invitation, Nagasaki, Japan
  16. Ultrarapid thermal annealing induced by DC arc discharge plasma jet its application, S. Higashi, H. Kaku, T. Okada, H. Murakami, and S. Miyazaki, 5th Int. Symp. Nanotechnol. JAPAN NANO 2007, 2007/02/20, Without Invitation, Tokyo, Japan
  17. Ultrarapid Thermal Annealing Induced by DC Arc Discharge Plasma Jet Irradiation, S. Higashi, H. Kaku, T. Okada, T. Yorimoto, H. Murakami, and S. Miyazaki, Fifth Hiroshima Int. Workshop Nanoelectronics for Tera-Bit Information Processing, 2007/01/29, Without Invitation, Tokyo, Japan
  18. Comparison of Defect Densities in Excimer Laser and Thermal Plasma Jet Crystallized Si Films, S. Higashi, T. Yorimoto, T. Okada, H. Kaku, H. Murakami, and S. Miyazaki, 3rd Int. TFT Conf., 2007/01/25, Without Invitation, Rome, Italy
  19. Ultrarapid Thermal Annealing Induced by Plasma Jet Irradiation and Its Application to Thin Film Transistor Fabrication, S. Higashi, H. Kaku, T. Okada, H. Murakami, and S. Miyazaki, Int. 21st Century COE Symp. Atomistic Fabrication Tech., 2006/10/19, Without Invitation, Osaka, Japan
  20. Rapid Thermal Annealing Technique Using Thermal Plasma Jet and Its Application to Thin Film Transistor Fabrication, S. Higashi, 12th Int. Display Workshop/Asia Display 2005, 2005/12/06, With Invitation, Takamatsu, Japan
  21. Formation of Si Nano-Crystals by Millisecond Annealing of SiOx Films using Thermal Plasma Jet, S. Higashi, T. Okada, N. Fujii, N. Koba, H. Murakami, and S. Miyazaki, Fourth Hiroshima Int. Workshop Nanoelectronics Tera-Bit Information Processing, 2005/09/16, Without Invitation, Hiroshima, Japan
  22. Rapid Thermal Annealing of Thin Films in Millisecond Time Domain Using Thermal Plasma Jet, S. Higashi, AM-LCD 05, 2005/07/06, With Invitation, Kanazawa, Japan
  23. Crystallization of Amorphous Si Films on Glass Substrate Using Plasma Jet and Its Application to Thin Film Transistor Fabrication, S. Higashi, H. Kaku, T. Okada, H. Taniguchi, H. Murakami, and S. Miyazaki, 3rd Hiroshima Int. Workshop Nanoelectronics Tera-Bit Information Processing, 2004/12/06, Without Invitation, Hiroshima, Japan
  24. Crystallization of Si Films on Glass Substrate Using Thermal Plasma Jet, S. Higashi, H. Kaku, H. Taniguchi, H. Murakami, and S. Miyazaki, Int. Conf. Polycrystalline Semiconductors 2004 (POLYSE), 2004/09/05, Without Invitation, Potsdam, Germany
  25. Crystallization of Si Thin Film Using Thermal Plasma Jet and Its Application to Thin-Film Transistor Fabrication, S. Higashi, H. Kaku, H. Murakami, S. Miyazaki, M. Asami, H. Watakabe, N. Ando, and T. Sameshima, AM-LCD 04, 2004/08/25, Without Invitation, Tokyo Japan
  26. Interface – The Key to High-Performance Poly-Si TFT Fabrication, S. Higashi, D. Abe, K. Miyashita, T. Kawamura, S. Inoue, and T. Shimoda, 2003/05/18, With Invitation, Baltimore USA
  27. Defect control Process Technologies for High-Performance Polycrystalline Si Thin-Film Transistor Fabrication,, S. Higashi, D. Abe, Y. Hiroshima, K. Miyashita, T. Kawamura, S. Inoue, and T. Shimoda, 7th Int. Conf. Polycrystalline Semiconductors VII (POLYSE VII), 2002/09/10, Without Invitation, Nara, Japan
  28. Effect of SiO2/Si Interface Quality on the Performance of Polycrystalline Si Thin-Film Transistor, S. Higashi, D. Abe, Y. Hiroshima, K. Miyashita, T. Kawamura, S. Inoue, and T. Shimoda, AM-LCD 02, 2002/07/10, Without Invitation, Tokyo, Japan
  29. Low Temperature Process Technologies and Their Application to Polycrystalline Si Thin-Film Transistor Fabrication, S. Higashi, D. Abe, S. Inoue, and T. Shimoda, AM-LCD 01, 2001/07/11, Without Invitation, Tokyo, Japan
  30. Pulsed-Laser-Induced Microcrystallization and Amorphization of Silicon Thin Films, S. Higashi, S. Inoue, T. Shimoda and T. Sameshima, AM-LCD 01, 2001/07/11, Without Invitation, Tokyo, Japan
  31. Low Temperature Process Technologies for The Next Generation High Performance Polycrystalline Silicon Thin-Film Transistors, S. Higashi, D. Abe, S. Inoue and T. Shimoda, Mat. Res. Soc. Symp., 2001/04/16, With Invitation, San Francisco, USA
  32. Low Temperature Formation of Device Quality MOS Interface Using SiO Evaporation in Oxygen Radical Atmosphere, S. Higashi, D. Abe, Y. Tsunoda and T. Sameshima, Tech. Pap. AM-LCD 2000, 2000/07/12, Without Invitation, Tokyo, Japan
  33. Electrical Properties of Excimer Laser Crystallized Polycrystalline Silicon Films, S. Higashi, Tech. Pap. AM-LCD 99, 1999/07/14, With Invitation, Tokyo, Japan
  34. A 1.8-in. Poly-Si TFT-LCD for HDTV Projectors with a 5-V Fully Integrated Driver, S. Higashi, Y. Matsueda, S. Takenaka, M. Miyasaka, I. Yudasaka, and H. Ohshima, Society for Information Display 95, 1995/05/16, Without Invitation, Orlando, USA
  35. Low Temperature Process Technologies and "Process Integration," for High Performance Polycrystalline Silicon Thin-Film Transistors, S. Higashi, Electrochem. Soc. Proc, 2000/10/23, With Invitation, Phoenix, USA
  36. Meniscus Force Mediated Transfer of Single-Crystalline Silicon Thin Films on PET Substrate and Its Application to CMOS Circuit Fabrication, S. Higashi, 18th International Meeting on Information Display (IMID2018), 2018/08/28, With Invitation, Busan, Korea

External Funds

Acceptance Results of Competitive Funds

  1. Adaptable and Seamless Technology transfer Program through targetdriven R&D, 2015/01/01, 2015/12/31
  2. Funding Program for Next Generation World-Leading Researchers, 2011/02/10, 2014/03/31
  3. KAKENHI, Control of Electronic Properties of One-Dimensionally Self-Aligned Si-Ge based Quantum Dots and Its Electroluminescence, 2009, 2012
  4. KAKENHI, Noncontact Temperature Measurement During Rapid Thermal Annealing and Investigation on Impurity Activation, 2007, 2009
  5. KAKENHI, Integration of silicon-based nano-scalestructure and its functional memory device application, 2006, 2009
  6. KAKENHI, The fabrication of super atom structure using Si based self-assembled quantum dots and its electron state control, 2003, 2005