SHUHEI AMAKAWA

Last Updated :2021/04/06

Affiliations, Positions
Graduate School of Advanced Science and Engineering, Associate Professor
E-mail
amakawahiroshima-u.ac.jp

Basic Information

Academic Degrees

  • MPhil, University of Cambridge
  • Ph.D., The University of Tokyo
  • Master of Engineering, The University of Tokyo

Research Fields

  • Engineering;Electrical and electronic engineering;Communication / Network engineering
  • Engineering;Electrical and electronic engineering;Measurement engineering
  • Engineering;Electrical and electronic engineering;Electron device / Electronic equipment

Educational Activity

Course in Charge

  1. 2021, Undergraduate Education, 1Term, Electromagnetic Wave Propagation
  2. 2021, Undergraduate Education, 2Term, Semiconductor Device Engineering
  3. 2021, Graduate Education (Master's Program) , First Semester, Seminar on Electronics A
  4. 2021, Graduate Education (Master's Program) , Second Semester, Seminar on Electronics B
  5. 2021, Graduate Education (Master's Program) , Academic Year, Academic Presentation in Electronics
  6. 2021, Graduate Education (Master's Program) , 1Term, Exercises in Electronics A
  7. 2021, Graduate Education (Master's Program) , 2Term, Exercises in Electronics A
  8. 2021, Graduate Education (Master's Program) , 3Term, Exercises in Electronics B
  9. 2021, Graduate Education (Master's Program) , 4Term, Exercises in Electronics B
  10. 2021, Graduate Education (Master's Program) , Academic Year, Advanced Study in Quantum Matter
  11. 2021, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Quantum Matter

Research Activities

Academic Papers

  1. 300 GHz CMOS Transmitter Module for Terahertz Communication, J102-C(12), 348-355, 20191201
  2. An 80-Gb/s 300-GHz-band single-chip CMOS transceiver, IEEE Journal of Solid-State Circuits, 54(12), 3577-3588, 20191201
  3. An 80-Gb/s 300-GHz-Band Single-Chip CMOS Transceiver, IEEE JOURNAL OF SOLID-STATE CIRCUITS, 54(12), 3577-3588, 201912
  4. Millimeter-wave CMOS amplifier with negative-capacitance feedback using half-wave transformer, International Symposium on Biomedical Engineering, 192-193, 20191114
  5. 300-GHz-band CMOS transmitter and receiver modules with WR-3.4 waveguide interface, IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G), 1-3, 20190815
  6. Theory of 2-port noise parameter transformation by lossless feedback and its application to LNA design, Thailand-Japan Microwave, 1-2, 20190628
  7. Wideband power-line decoupling technique for millimeter-wave CMOS integrated circuits, IEEE International Symposium on Circuits and Systems, 1-4, 20190529
  8. Characteristic impedance determination up to THz frequencies in light of causality, Global Symposium on Millimeter Waves, 50-52, 20190523
  9. 300-GHz wireless data transmission system with low-SNR CMOS RF front end, Global Symposium on Millimeter Waves, 47-49, 20190523
  10. An 80Gb/s 300GHz-band single-chip CMOS transceiver, International Solid-State Circuits Conference, 170-171, 20190219
  11. Causal characteristic impedance determination using calibration comparison and propagation constant, 92nd Automatic RF Techniques Group Microwave Measurement Conference, 1-6, 20190122
  12. 300-GHz CMOS transceiver for terahertz wireless communication, Asia-Pacific Microwave Conference, 1-3, 20181107
  13. Temperature dependence of bandpass filters built of silica-based post-wall waveguide for millimeter-wave applications, European Microwave Conference, 703-706, 20180926
  14. 300-GHz CMOS receiver module with WR-3.4 waveguide interface, European Microwave Conference, 396-399, 20180926
  15. A 239–315 GHz CMOS frequency doubler designed by using a small-signal harmonic model, European Microwave Integrated Circuits Conference, 109-112, 20180924
  16. 79–85 GHz CMOS amplifier with 0.35V supply voltage, European Microwave Integrated Circuits Conference, 37-40, 20180924
  17. 32-Gbit/s CMOS receivers in 300-GHz band, IEICE Transactions on Electronics, E101-C(7), 464-471, 20180701
  18. 300-GHz CMOS transmitter module with built-in waveguide transition on a multilayered glass epoxy PCB, IEEE Radio and Wireless Symposium (RWS), 154-156, 20180116
  19. An E-band hybrid-coupled diplexer built of silica-based post-wall waveguide, European Microwave Conference (EuMC), 819-822, 20171011
  20. Noise-figure optimization of a multi-stage millimeter-wave amplifier with negative capacitance feedback, Thailand-Japan Microwave (TJMW), 1-2, 20170615
  21. How does my microwave/EM simulator define complex-referenced S-parameters?, Vietnam-Japan Microwave (VJMW), 112-115, 20170614
  22. Design of CMOS on-chip antenna in 300-GHz band, 116(486), 95-100, 20170303
  23. Integrated-Circuit Approaches to THz Communications: Challenges, Advances, and Future Prospects, IEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS COMMUNICATIONS AND COMPUTER SCIENCES, E100A(2), 516-523, 201702
  24. A 105Gb/s 300GHz CMOS transmitter, International Solid-State Circuits Conference (ISSCC), 308-309, 2017
  25. DC and RF characterization of RF MOSFET embedding structure, International Conference on Microelectronic Test Structures (ICMTS), 103-107, 2017
  26. Causal transmission line model incorporating frequency-dependent linear resistors, 21st IEEE Workshop on Signal and Power Integrity (SPI), 1-4, 2017
  27. Prescriptions for identifying the definition of complex-referenced S-parameters in commercial EM simulators, The 38th PIERS in St Petersburg, 264-265, 2017
  28. An 80–106 GHz CMOS amplifier with 0.5V supply voltage, IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 308-311, 2017
  29. 56-Gbit/s 16-QAM wireless link with 300-GHz-band CMOS transmitter, IEEE MTT-S International Microwave Symposium (IMS), 1-4, 2017
  30. A 32Gbit/s 16QAM CMOS receiver in 300GHz band, IEEE MTT-S International Microwave Symposium (IMS), 1-4, 2017
  31. A 416-mW 32-Gbit/s 300-GHz CMOS receiver, International Symposium on Radio-Frequency Integration Technology (RFIT), 65-67, 2017
  32. 2.37-dBm-output 288–310 GHz frequency multiplier in 40 nm CMOS, International Symposium on Radio-Frequency Integration Technology (RFIT), 28-30, 2017
  33. A 40 dB peak gain, wideband, low noise intermediate frequency (IF) amplifier, Asia-Pacific Microwave Conference (APMC), 622-625, 2017
  34. A 300 GHz CMOS Transmitter With 32-QAM 17.5 Gb/s/ch Capability Over Six Channels, IEEE JOURNAL OF SOLID-STATE CIRCUITS, 51(12), 3037-3048, 201612
  35. Scattered Reflections on Scattering Parameters -Demystifying Complex-Referenced S Parameters-, IEICE TRANSACTIONS ON ELECTRONICS, E99C(10), 1100-1112, 201610
  36. Compact 141-GHz Differential Amplifier with 20-dB Peak Gain and 22-GHz 3-dB Bandwidth, IEICE TRANSACTIONS ON ELECTRONICS, E99C(10), 1156-1163, 201610
  37. Wireless digital data transmission from a 300 GHz CMOS transmitter, Electronics Letters, 52(15), 1353-1355, 20160721
  38. Millimeter-wave characteristics of coplanar waveguide on GaAs substrate, Thailand-Japan Microwave (TJMW), 20160609
  39. A QAM-capable 300-GHz CMOS transmitter, International Workshop on Smart Wireless Communications (SmartCom), 39-46, 20160517
  40. Design Method of Gain-Boosted Small-Signal Amplifiers with Lossless Reciprocal Feedback, TECHNICAL REPORT OF IEICE, 115(476), 181-186, 20160304
  41. Evaluation of low characteristic impedance transmission line for millimeter-wave decoupling, Technical Report of IEICE, 115(476), 163-167, 20160304
  42. Design of differential type microstrip line-to-waveguide transitions for 300GHz, IEICE Technical Report, 115(476), 169-173, 20160304
  43. Theoretical analysis of a frequency tripler-based mixer, IEICE Technical Report, 115(476), 175-179, 20160304
  44. A 300GHz 40nm CMOS transmitter with 32-QAM 17.5Gb/s/ch capability over 6 channels, International Solid-State Circuits Conference (ISSCC), 342-343, 20160203
  45. Quintic mixer: A subharmonic up-conversion mixer for THz transmitter supporting complex digital modulation, IEEE MTT-S International Microwave Symposium (IMS), 1-3, 2016
  46. CMOS 300-GHz 64-QAM transmitter, IEEE MTT-S International Microwave Symposium (IMS), 1-4, 2016
  47. System-level evaluation of 300GHz CMOS wireless transmitter using cubic mixer, International Symposium on Radio-Frequency Integration Technology (RFIT), 1-3, 2016
  48. 14.4-dB CMOS D-band low-noise amplifier with 22.6-mW power consumption utilizing bias-optimization technique, International Symposium on Radio-Frequency Integration Technology (RFIT), 1-3, 2016
  49. A 300-GHz 64-QAM CMOS transmitter with 21-Gb/s maximum per-channel data rate, European Microwave Integrated Circuits Conference (EuMIC), 193-196, 2016
  50. Power spectrum analysis of a tripler-based 300-GHz CMOS upconversion mixer, European Microwave Conference (EuMC), 345-348, 2016
  51. Graphical approach to analysis and design of gain-boosted near-fmax feedback amplifiers, European Microwave Conference (EuMC), 1039-1042, 2016
  52. 続S パラメータ利用の落とし穴:VNA キャリブレーションとは何か(穴にはまった人からの報告), MWEワークショップダイジェスト, 1-6, 2016
  53. Compact 141-GHz differential amplifier with 20-dB peak gain and 22-GHz 3-dB bandwidth, IEICE Technical Report, 115(387), 1-6, 20151221
  54. Tehrahertz CMOS Design for Low-Power and High-Speed Wireless Communication, IEICE TRANSACTIONS ON ELECTRONICS, E98C(12), 1091-1104, 201512
  55. Demystifying S parameters: Confusion surrounding S-parameter definitions, MWE 2015 Workshop Digest, 20151127
  56. 124-GHz CMOS quadrature voltage-controlled oscillator with fundamental injection locking, Asian Solid-State Circuits Conference (A-SSCC), 77-80, 20151110
  57. Modeling of wideband decoupling power line for millimeter-wave CMOS circuits, International Symposium on Radio-Frequency Integration Technology (RFIT), 151-153, 20150828
  58. Compact 138-GHz amplifier with 18-dB peak gain and 27-GHz 3-dB bandwidth, International Symposium on Radio-Frequency Integration Technology (RFIT), 55-57, 20150827
  59. Comparative analysis of on-chip transmission line de-embedding techniques, International Symposium on Radio-Frequency Integration Technology (RFIT), 91-93, 20150827
  60. Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz, International Symposium on Radio-Frequency Integration Technology (RFIT), 94-96, 20150827
  61. Parasitic conscious 54 GHz divide-by-4 injection-locked frequency divider, International Symposium on Radio-Frequency Integration Technology (RFIT), 103-105, 20150827
  62. Power line decoupling up to 325 GHz in CMOS, Vietnam-Japan Microwave (VJMW), 20150810
  63. Power line decoupling up to 325 GHz in CMOS, Thailand-Japan Microwave (TJMW), 20150808
  64. Low-loss silicabased bandpass filter for 60-GHz applications, Thailand-Japan Microwave (TJMW), 20150807
  65. Recent progress and prospects of terahertz CMOS, IEICE Electron. Express, 12(13), 1-7, 20150710
  66. Compact and low-loss bandpass filter realized in silica-based post-wall waveguide for 60-GHz applications, IEEE MTT-S International Microwave Symposium (IMS), 20150521
  67. Wideband CMOS decoupling power line for millimeter-wave applications, IEEE MTT-S International Microwave Symposium (IMS), 20150521
  68. Compact 160-GHz amplifier with 15-dB peak gain and 41-GHz 3-dB bandwidth, IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 7-10, 20150519
  69. 300-GHz MOSFET model extracted by an accurate cold-bias de-embedding technique, IEEE MTT-S International Microwave Symposium (IMS), 20150519
  70. Tips for precise on-wafer measurement in the terahertz region, 84(5), 453-457, 20150501
  71. Characterization of wideband decoupling power line with extremely low characteristic impedance for millimeter-wave CMOS circuits, International Conference on Microelectronic Test Structures (ICMTS), 2015(-), 220-223, 20150323
  72. Systematic calibration procedure of process parameters for electromagnetic field analysis of millimeter-wave CMOS devices, International Conference on Microelectronic Test Structures (ICMTS), 2015(-), 230-234, 20150323
  73. C-2-55 A Millimeter-wave Bandpass Filter with Microstrip-Interface Realized by Post-Wall Waveguide, Proceedings of the IEICE General Conference, 2015(1), 20150224
  74. Design of CMOS resonating push-push frequency doubler, IEICE Wabun Rombunshi C, J97-C(12), 484-491, 20141201
  75. On-wafer transmission line measurement above 100 GHz, Thailand-Japan Microwave (TJMW), 2014(-), 1-2, 20141127
  76. Millimeterwave CMOS transmission-line-to-waveguide transition for 220–325 GHz, Thailand-Japan Microwave (TJMW), 2014(-), 1-2, 20141127
  77. Theory of gain and stability of small-signal amplifiers with lossless reciprocal feedback, Asia-Pacific Microwave Conference (APMC), 2014(-), 1184-1186, 20141107
  78. Analytical design of small-signal amplifier with maximum gain in conditionally stable region, Asia-Pacific Microwave Conference (APMC), 2014(-), 774-776, 20141107
  79. 79 GHz CMOS power amplifier considering time- and temperature-degradation model, Asia-Pacific Microwave Conference (APMC), 2014(-), 637-639, 20141107
  80. C-2-1 Relationship between Size of Buffer and Maximum Oscillation Frequency in Ring Oscillator, Proceedings of the Society Conference of IEICE, 2014(1), 20140909
  81. C-2-22 Multi-Stage CMOS Amplifier with Flat Gain Response, Proceedings of the Society Conference of IEICE, 2014(1), 20140909
  82. C-2-39 CMOS transmission Line-to-Waveguide Transitions with coaxial structure, Proceedings of the Society Conference of IEICE, 2014(1), 20140909
  83. C-2-70 Injection-Locked-Oscillator-Based Phase Shifter with High Phase Resolution, Proceedings of the Society Conference of IEICE, 2014(1), 20140909
  84. C-12-31 Evaluation of Uncertainty at On-Wafer Measurement of CMOS Millimeter-Wave Integrated Circuits, Proceedings of the Society Conference of IEICE, 2014(2), 20140909
  85. Diode modeling with lossy nonlinear capacitance model, International Conference on Solid State Devices and Materials (SSDM), 2014(-), 96-97, 20140901
  86. Design of CMOS resonating push-push frequency doubler, International Meeting for Future Electron Devices Kansai (IMFEDK), 2014(-), 1-2, 20140619
  87. Design of millimeter-wave CMOS transmission-line-to-waveguide transitions, International Meeting for Future Electron Devices Kansai (IMFEDK), 2014(-), 1-2, 20140619
  88. Evaluation of CMOS differential transmission lines as two-port networks with on-chip baluns in millimeter-wave band, 83rd Automatic RF Techniques Group Conference (ARFTG), 2014(-), 1-5, 20140606
  89. E-Band 65 nm CMOS Low-Noise Amplifier Design Using Gain-Boost Technique, IEICE TRANSACTIONS ON ELECTRONICS, E97-C(6), 476-485, 20140601
  90. Design of well-behaved low-loss millimetre-wave CMOS transmission lines, 18th IEEE Workshop on Signal and Power Integrity (SPI), 2014(-), 1-4, 20140512
  91. Small signal model considering hot-carrier effect for millimeter-wave frequencies, 7th Global Symposium on Millimeter-Waves (GSMM), 2014(-), 131-132, 20140501
  92. Gain-boosted E-band low-noise amplifier, 7th Global Symposium on Millimeter-Waves (GSMM), 2014(-), 117-118, 20140501
  93. C-12-50 Diode Modeling with Lossy Nonlinear Capacitance Model, Proceedings of the IEICE General Conference, 2014(2), 20140304
  94. C-2-1 Temperature Compensation of CMOS Power Amplifier for 79GHz Radar System, Proceedings of the IEICE General Conference, 2014(1), 20140304
  95. C-2-36 Study for Gain of Small-Signal Amplifier at Conditionally Stable Region, Proceedings of the IEICE General Conference, 2014(1), 20140304
  96. C-2-61 The Effect on the Device Evaluation Results of Measurement Variability in the Millimeter-wave CMOS On-Chip De-embedding, Proceedings of the IEICE General Conference, 2014(1), 20140304
  97. C-2-92 CMOS Microstrip Line-to-WR3.4 Waveguide Transitions, Proceedings of the IEICE General Conference, 2014(1), 20140304
  98. C-2-103 Study of Dummy Generation Method for Transmission Line on CMOS Circuit, Proceedings of the IEICE General Conference, 2014(1), 20140304
  99. Characterization of low-characteristic-impedance decoupling transmission line, IEICE technical report. Microwaves, 113(460), 29-34, 20140225
  100. On-wafer de-embedding pattern design for reduced uncertainty under an area constraint, IEICE technical report. Microwaves, 113(460), 35-40, 20140225
  101. Matching circuit for CMOS millimeter-wave frequency doubler, IEICE technical report. Microwaves, 113(460), 41-46, 20140225
  102. Consideration about Extremely High Frequency CMOS Amplification Circuit which is Wideband, IEICE technical report. Microwaves, 113(460), 47-51, 20140225
  103. Diode Modeling with Lossy Nonlinear Capacitance Model, Technical report of IEICE. ICD, 113(419), 20140121
  104. Design of CMOS Transmission Line-to-Waveguide Transitions from Milimeter Wave, Technical report of IEICE. ICD, 113(419), 20140121
  105. Drain Matching CMOS Millimeter-wave Frequency Doubler, Technical report of IEICE. ICD, 113(419), 20140121
  106. Modeling of Short-Millimeter-Wave CMOS Transmission Line with Lossy Dielectrics with Specific Absorption Spectrum, IEICE TRANSACTIONS ON ELECTRONICS, E96-C(10), 1311-1318, 20131001
  107. Relations of Gain and Stability in terms of the Parameter μ, Proceedings of the Society Conference of IEICE, 2013(1), 20130903
  108. Design of Matching Network with a Transformer, Proceedings of the Society Conference of IEICE, 2013(1), 20130903
  109. C-2-37 Design for Maximum FOM of 79GHz Power Amplifier with Temperature Compensation, Proceedings of the Society Conference of IEICE, 2013(1), 20130903
  110. Selection of Process Parameters in Electromagnetic Field Analysis, Proceedings of the Society Conference of IEICE, 2013(1), 20130903
  111. Study on the Structure of CMOS Transmission Lines for Short-Millimeter-Wave Band, Proceedings of the Society Conference of IEICE, 2013(1), 20130903
  112. Study on the Length of THRU Used in CMOS On-Chip Deembedding, Proceedings of the Society Conference of IEICE, 2013(1), 20130903
  113. A Study of Modeling of Non-linear Capacitors in the Diode, Proceedings of the Society Conference of IEICE, 2013(2), 20130903
  114. Study on the Length ofthe Zero-Ohm Transmission Line in Millimeter-Wave CMOS Circuits, Proceedings of the Society Conference of IEICE, 2013(2), 20130903
  115. On the length of THRU standard for TRL de-embedding on Si substrate above 110 GHz, International Conference on Microelectronic Test Structures (ICMTS), 2013(-), 81-86, 20130301
  116. Scattering matrix normalized to a nondiagonal reference impedance matrix, IEICE technical report. Microwaves, 112(459), 37-38, 20130227
  117. An inductorless cascaded phase-locked loop with pulse injection locking technique in 90 nm CMOS, International Journal of Microwave Science and Technology, 2013(584341), 1-11, 20130121
  118. On the choice of cascade de-embedding methods for on-wafer S-parameter measurement, International Symposium on Radio-Frequency Integration Technology (RFIT), 2012(-), 137-139, 20121101
  119. Characteristic impedance determination technique for CMOS on-wafer transmission line with large substrate loss, 79th Automatic RF Techniques Group Conf. (ARFTG), 2012(-), -, 20120601
  120. RF signal generator using time domain harmonic suppression technique in 90 nm CMOS, IEICE Electronics Express, 9(4), 270-275, 20120225
  121. 1.2–17.6 GHz ring-oscillator-based phase-locked loop with injection locking in 65 nm complementary metal oxide semiconductor, Japanese Journal of Applied Physics, 51(2S), 02BE03, 20120220
  122. High frequency transmission characteristics of the interconnects stacked into the 3D IC configuration, The Journal of Japan Institute for Interconnecting and Packaging Electronic Circuits, 14(6), 501-506, 20110901
  123. A study of digitally controllable radio frequency micro electro mechanical systems inductor, Jpn. J. Appl. Phys. (JJAP), 50(5), 05EE01, 20110501
  124. Challenges and Opportunities of RF CMOS in Wireless Communication, The Journal of the Institute of Electronics, Information, and Communication Engineers, 94(5), 427-432, 20110501
  125. Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(4), 20110420
  126. Modeling of Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor for Accurate Prediction of Junction Condition on Device Characteristics, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(4), 20110420
  127. Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors, Jpn. J. Appl. Phys. (JJAP), 50, 04DC12, 20110401
  128. Modeling of Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor for Accurate Prediction of Junction Condition on Device Characteristics, Jpn. J. Appl. Phys. (JJAP), 50, 1-5, 20110401
  129. 2.4-10 GHz low-noise injection-locked ring voltage controlled oscillator in 90 nm complementary metal oxide semiconductor, Jpn. J. Appl. Phys. (JJAP), 50(4), 04DE03 (1-5), 20110401
  130. C-12-11 An Inductorless Phase-Locked Loop with an Injection Locking Technique, Proceedings of the IEICE General Conference, 2011(2), 20110228
  131. C-12-23 A Study of Inverter-based RF CMOS Low Noise Amplifier Scalability in CMOS Process, Proceedings of the IEICE General Conference, 2011(2), 20110228
  132. C-12-36 A High Voltage CMOS Charge Pump Circuit for MEMS Electrostatic Actuators, Proceedings of the IEICE General Conference, 2011(2), 20110228
  133. Interconnect design challenges in nano CMOS circuit, Key Engineering Materials, 470, 224-230, 20110201
  134. RF CMOS Integrated Circuit: History, Current Status and Future Prospects, IEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS COMMUNICATIONS AND COMPUTER SCIENCES, E94-A(2), 556-567, 20110201
  135. High-frequency half-integral subharmonic locked ring-VCO-based scalable PLL in 90 nm CMOS, Asia-Pacific Microwave Conference, 586-589, 20101201
  136. Development of High-Frequency Inductors Using Wafer-Level Packaging Technology and Its Circuit Application, The transactions of the Institute of Electronics, Information and Communication Engineers. C, J93-C(11), 477-484, 20101101
  137. A Fusion of CMOS Integrated Circuit with MEMS, The Journal of the Institute of Electronics, Information, and Communication Engineers, 93(11), 928-932, 20101101
  138. Digitally controllable RF MEMS inductor, Advanced Metallization Conference, 20101001
  139. RF signal generator based on time-to-analog converter using multi-ring oscillators in 90nm CMOS, International Conference on Solid State Devices and Materials, 103-104, 20100901
  140. Wide-frequency-range low-noise injection-locked ring VCO for UWB applications in 90 nm CMOS, International Conference on Solid State Devices and Materials, 109-110, 20100901
  141. Inductorless 8.9mW 25 Gb/s 1:4 DEMUX and 4mW 13 Gb/s 4:1 MUX in 90 nm CMOS, J. Semicond. Technol. Sci., 10(3), 404-407, 20100901
  142. Universal relationship between settling time of floating-body SOI MOSFETs and the substrate current in their body-tied counterparts, International Conference on Solid State Devices and Materials, 1013-1014, 20100901
  143. C-12-15 A Study of High-Speed Low-Power MUX/DEMUX in chips, Proceedings of the Society Conference of IEICE, 2010(2), 20100831
  144. C-12-31 Investigation of RF Signal Generator Using CMOS Multi-Ring Oscillators, Proceedings of the Society Conference of IEICE, 2010(2), 20100831
  145. C-12-32 A Scalable Wideband Ring-VCO with Injection Locking, Proceedings of the Society Conference of IEICE, 2010(2), 20100831
  146. C-12-36 A Low-Phase-Noise Ring-VCO-Based PLL with Injection Locking, Proceedings of the Society Conference of IEICE, 2010(2), 20100831
  147. C-12-37 CMOS Inverter-based Wideband LNA in 65nm Technology, Proceedings of the Society Conference of IEICE, 2010(2), 20100831
  148. C-12-43 CMOS Power Amplifier in 65nm Technology, Proceedings of the Society Conference of IEICE, 2010(2), 20100831
  149. C-12-44 Measurement results of Wideband RF 2 Step Gain Amplifier, Proceedings of the Society Conference of IEICE, 2010(2), 20100831
  150. C-12-50 Low-power wireless pH sensing FM transmitter IC with Ion Sensitive Field Effect Transistor, Proceedings of the Society Conference of IEICE, 2010(2), 20100831
  151. Wideband, high-linearity low-noise amplifier design in sub-micrometer CMOS technology, Progress In Electromagnetics Research Symposium, 727-728, 20100701
  152. A wearably small low-power wireless pH sensor module incorporating an ion-sensitive field-effect transistor field-effect transistor, International Meeting on Chemical Sensors, 378, 20100701
  153. Physical design challenge in nanoscale CMOS RF circuit, International Symposium on Technology Evolution for Silicon Nano-Electronics, 39, 20100601
  154. Interconnect challenges in nano CMOS circuit, International Symposium on Technology Evolution for Silicon Nano-Electronics, 28, 20100601
  155. Radio frequency micro electro mechanical systems inductor configurations for achieving large inductance variations and high Q-factors, Japanese Journal of Applied Physics, 49, 05FG02, 20100501
  156. Design of on-chip high speed interconnect on complementary metal oxide semiconductor 180 nm technology, Japanese Journal of Applied Physics, 49, 04DE14, 20100401
  157. A thru-only de-embedding method for on-wafer characterization of multiport networks, Advanced Microwave Circuits and Systems, 13-32, 20100401
  158. Design of on-chip high speed interconnect on complementary metal oxide semiconductor 180 nm technology, Japanese Journal of Applied Physics, 49, 04DE14, 20100401
  159. C-12-2 A Digital Based Scalable QPSK RF Modulator, Proceedings of the IEICE General Conference, 2010(2), 20100302
  160. C-12-3 Investigation of CMOS QPSK RF Signal Generator using Injection Locking, Proceedings of the IEICE General Conference, 2010(2), 20100302
  161. C-12-12 Wide-Band, Linear Low Noise Amplifier Design, Proceedings of the IEICE General Conference, 2010(2), 20100302
  162. C-12-13 Study of High-Gain and Wideband RF Variable Gain Amplifier based on CMOS Inverter Topology, Proceedings of the IEICE General Conference, 2010(2), 20100302
  163. C-12-17 A 2.8-11 GHz Wideband Differential Ring-VCO, Proceedings of the IEICE General Conference, 2010(2), 20100302
  164. C-12-58 A Study of MUX/DEMUX With Clocked Inverter Type D-FF, Proceedings of the IEICE General Conference, 2010(2), 20100302
  165. C-12-59 Performance Comparison of High-Speed Digital Signal Transmission Characteristics between RC Line and Transmission Line, Proceedings of the IEICE General Conference, 2010(2), 20100302
  166. A-1-42 Wireless pH sensor module with an ISFET, Proceedings of the IEICE General Conference, 2010, 20100302
  167. A Universal Equivalent Circuit Model for Ceramic Capacitors, IEICE Trans. Electron., 93(3), 347-354, 20100301
  168. Highly energy-efficient on-chip pulsed-current-mode transmission line interconnect, Solid State Circuit Technologies, 263-280, 20100101
  169. Inter-Chip Wiring Technology for 3-D LSI, Electrochemistry, 77(9), 812-817, 20090905
  170. C-12-16 Inductorless Wideband RF CMOS Low-Noise Amplifier based CMOS Inveter, Proceedings of the Society Conference of IEICE, 2009(2), 20090901
  171. C-12-17 Evaluation of a CMOS-Inverter-Based Wideband Variable Gain Amplifier, Proceedings of the Society Conference of IEICE, 2009(2), 20090901
  172. C-12-22 Investigation of CMOS RF Signal Generator Based on Time To Analog Converter, Proceedings of the Society Conference of IEICE, 2009(2), 20090901
  173. C-12-23 A Scalable Wideband RF QPSK Modulator, Proceedings of the Society Conference of IEICE, 2009(2), 20090901
  174. C-12-25 Frequency Tuning Range broadening of CMOS I/Q Ring-VCO, Proceedings of the Society Conference of IEICE, 2009(2), 20090901
  175. C-12-52 4:1 MUX Design for On-Chip Serial Transmission, Proceedings of the Society Conference of IEICE, 2009(2), 20090901
  176. C-12-53 Performance comparison of transmission characteristics between on-chip transmission line and RC line adapting capacitive pre-emphasis technique, Proceedings of the Society Conference of IEICE, 2009(2), 20090901
  177. RF CMOS Integrated Circuit : Reconfigurability and Scalability, IEICE technical report, 109(155), 165-166, 20090722
  178. Inter-Chip Wiring Technology for 3-D LSI, 73, 57-60, 20090709
  179. Physical design challenges to nano-CMOS circuits, IEICE Electronics Express, 6(11), 703-720, 20090701
  180. C-12-26 Design of Coplanar-Strip Differential Transmission Line on Si Substrate, Proceedings of the IEICE General Conference, 2009(2), 20090304
  181. C-12-60 Investigation of Scalable Wideband RF CMOS Low Noise Amplifier Using Inveter Construction, Proceedings of the IEICE General Conference, 2009(2), 20090304
  182. C-12-50 Investigation of CMOS LC-VCO on Process Generation Relativity, Proceedings of the IEICE General Conference, 2009(2), 20090304
  183. C-12-33 Design of an On-Chip Low-Jitter Inverter Buffer Using Feedback Resister, Proceedings of the IEICE General Conference, 2009(2), 20090304
  184. C-12-29 A Comparison of On-chip/Off-chip Inductors for Enhancement of Performance of RF CMOS Circuits, Proceedings of the IEICE General Conference, 2009(2), 20090304
  185. C-2-14 A CMOS-Inverter-Based Wideband Variable Gain Amplifier, Proceedings of the Society Conference of IEICE, 2008(1), 20080902
  186. C-12-45 RF CMOS Low Noise Amplifier Dependencies on Process Generation, Proceedings of the Society Conference of IEICE, 2008(2), 20080902
  187. C-2-57 Dependence on Process Generation of CMOS RF Power Amplifier, Proceedings of the Society Conference of IEICE, 2008(2), 20080902
  188. A-1-12 Wide Band CMOS Differential Type Ring VCO, Proceedings of the Society Conference of IEICE, 2008, 20080902
  189. Layout-aware compact model of MOSFET characteristics variations induced by STI stress, IEICE Transactions on Electronics, E91-C(7), 1142-1150, 20080701
  190. Single-parameter nonadiabatic quantized charge pumping, Physical Review B, 77, 153301, 20080401
  191. 21401 Challenges in LSI scaling in light of interconnect resource requirements, 2008(14), 381-382, 20080313
  192. C-2-86 An Effective Attenuation that Includes Crosstalk from Wirings with Various Attenuation Characteristics, Proceedings of the Society Conference of IEICE, 2007(1), 20070829
  193. A wire-length distribution that models moderate-angled sectioning and underoccupancy of core area, Proceedings of the IEICE General Conference, 2007, 20070307
  194. Single-electron logic based on multiple-tunnel junctions, Mesoscopic Tunneling Devices, 2004, 71-104, 20040801
  195. Nanosilicon for single-electron devices, Current Applied Physics, 4, 98-101, 20040401
  196. Cross-coupling in Coulomb blockade circuits: Bidirectional electron pump, Journal of Applied Physics, 94(5), 3194-3200, 20030901
  197. Characteristics of two Coulomb blockade transistors separated by an island to which an oscillating potential is applied: theory and experiment, Applied Physics Letters, 79(4), 533-535, 20010701
  198. Nanoscale Coulomb blockade memory and logic devices, Nanotechnology, 12(2), 155-159, 20010601
  199. Analysis of multiphase clocked electron pumps consisting of single-electron transistors, Journal of Applied Physics, 89(9), 5001-5008, 20010501
  200. Charging and retention times in silicon-floating-dot-single-electron memory, Japanese Journal of Applied Physics, 40(3B), 2041-2045, 20010301
  201. Scaling of the single-electron tunnelling current through ultrasmall tunnel junctions, Journal of Physics: Condensed Matter, 12(32), 7223-7228, 20000801
  202. Circuit simulator aiming at single-electron integration, Japanese Journal of Applied Physics, 37(3B), 1478-1482, 19980301
  203. Single-electron circuit simulation, IEICE Transactions on Electronics, E81-C(1), 21-29, 19980125
  204. Proposal of a Schottky-barrier SET aiming at a future integrated device, IEICE Transactions on Electronics, E80-C(7), 881-885, 19970701
  205. Correlated electron-hole transport in capacitively-coupled one-dimensional tunnel junction arrays, Japanese Journal of Applied Physics, 36(6B), 4166-4171, 19970601
  206. Estimation of cotunneling in single-electron logic and its suppression, Japanese Journal of Applied Physics, 35(2B), 1146-1150, 19960201
  207. Cotunneling-tolerant single-electron logic, Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials (SSDM), 207-209, 19950901
  208. Highly configurable cylindrical-resonator-based bandpass filter built of silica-based post-wall waveguide and its application to compact E-band hybrid-coupled diplexer, IEEE International Microwave Symposium, 726-729, 201906
  209. A 6-mW-DC-power 300-GHz CMOS receiver for near-field wireless communications, IEEE International Microwave Symposium, 504-507, 201906
  210. A -40-dBc integrated-phase-noise 45-GHz sub-sampling PLL with 3.9-dBm output and 2.1% DC-to-RF efficiency, IEEE Radio Frequency Integrated Circuits Symposium, 175-178, 201906
  211. A 37-GHz-input divide-by-36 injection-locked frequency divider with 1.6-GHz lock range, Asian Solid-State Circuits Conference, 219-222, 201811
  212. Half-mode-like parasitic transmission found in millimeter-wave bandpass filters realized in post-wall waveguide, European Microwave Conference in Central Europe, 1-4, 201905
  213. A 300-uW K-band oscillator with high-Q open-stub capacitor in 55-nm CMOS DDC, International Symposium on Radio-Frequency Integration Technology, 1-3, 201808

Publications such as books

  1. 2019/08/19, Design of Terahertz CMOS Integrated Circuits for High-Speed Wireless Communication, IET, 2019, Scholarly Book, Joint work, English, M. Fujishima and S. Amakawa, 1785613871

Invited Lecture, Oral Presentation, Poster Presentation

  1. Theoretical study of optimal feedback LNA design, K. Ono, S. Amakawa, International Symposium on Radio-Frequency Integration Technology (RFIT), 2020/09/04, Without Invitation, English
  2. Sub-THz CMOS transmission lines: Properties, characterization, and modeling, Shuhei Amakawa, International Symposium on Radio-Frequency Integration Technology (RFIT), 2020/09/02, With Invitation, English, IEEE
  3. Design theory of low-noise amplifier realizing the minimum noise measure using lossless feedback, Kosuke Ono, Takeshi Yoshida, Shuhei Amakawa, 2020/03/17, Without Invitation, Japanese
  4. CMOS circuit technology enabling terahertz wireless communications, Shuhei Amakawa, 2020/03/17, With Invitation, Japanese
  5. Theory of 2-port noise parameter transformation by lossless feedback and its application to LNA design, Kosuke Ono and Shuhei Amakawa, HISS, 2019/11/30, Without Invitation, Japanese
  6. 300-GHz-band CMOS transmitter and receiver modules with WR-3.4 waveguide interface, Shuhei Amakawa, IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G), 2019/08/15, With Invitation, English
  7. Wideband power-line decoupling technique for millimeter-wave CMOS integrated circuits, IEEE International Symposium on Circuits and Systems (ISCAS), 2019/05/29, With Invitation, English
  8. Characteristic impedance determination up to THz frequencies in light of causality, Global Symposium on Millimeter Waves (GSMM), 2019/05/23, With Invitation, English
  9. Feedback network design for transistor operating near its performance limit, Shuhei Amakawa, Emerging Technologies 2018 (ETCMOS), 2018/05/10, With Invitation, English, Whistler, Canada
  10. How does my microwave/EM simulator define complex-referenced S-parameters?, Shuhei Amakawa, Vietnam-Japan Microwave, 2017/06/14, With Invitation, English, Hanoi, Vietnam
  11. An 80–106 GHz CMOS amplifier with 0.5V supply voltage, Shuhei Amakawa, K. Katayama,K. Takano, T. Yoshida, M. Fujishima, K. Hisamitsu, and H. Takatsuka, IEEE Radio Frequency Integrated Circuits Symposium, 2017/06/06, Without Invitation, English, IEEE, Honolulu, Hawaii
  12. Prescriptions for identifying the definition of complex-referenced S-parameters in commercial EM simulators, Shuhei Amakawa, Yuya Kobayashi, The 38th PIERS in St Petersburg, 2017/05/22, Without Invitation, English, St. Petersburg
  13. 300GHz CMOS: From high-frequency measurement and device modelling to circuit design, Shuhei Amakawa, 2016/10/10, With Invitation, English, Cambridge, UK
  14. Graphical approach to analysis and design of gain-boosted near-fmax feedback amplifiers, Shuhei Amakawa, Y. Ito, European Microwave Conference, 2016/10/04, Without Invitation, English, London, UK
  15. A QAM-capable 300-GHz CMOS transmitter, Shuhei Amakawa, K. Katayama, K. Takano, S. Hara, A. Kasamatsu, K. Mizuno, K. Takahashi, T. Yoshida, and M. Fujishima, International Workshop on Smart Wireless Communications (SmartCom), 2016/05/17, With Invitation, English, Oulu, Finland
  16. Concepts and methods in on-wafer RF and microwave measurements, Shuhei Amakawa, International Conference on Microelectronic Test Structures (ICMTS), 2016/03/28, With Invitation, English, Yokohama
  17. Demystifying S parameters: Confusion surrounding S-parameter definitions, Shuhei Amakawa, MWE 2015, 2015/11/27, With Invitation, Japanese
  18. Comparative analysis of on-chip transmission line de-embedding techniques, Shuhei Amakawa, K. Katayama, K. Takano, T. Yoshida and M. Fujishima, International Symposium on Radio-Frequency Integration Technology (RFIT), 2015/08/27, Without Invitation, English, Sendai, Japan
  19. Power line decoupling up to 325 GHz in CMOS, Shuhei Amakawa, R. Goda, K. Katayama, K. Takano, T. Yoshida, and M. Fujishima, Vietnam-Japan Microwave (VJMW), 2015/08/10, With Invitation, English, Ho Chi Minh City, Vietnam
  20. Power line decoupling up to 325 GHz in CMOS, Shuhei Amakawa, R. Goda, K. Katayama, K. Takano, T. Yoshida, and M. Fujishima, Thailand-Japan Microwave (TJMW), 2015/08/08, With Invitation, English, Bangkok, Thailand
  21. Wideband CMOS decoupling power line for millimeter-wave applications, Shuhei Amakawa, R. Goda, K. Katayama, K. Takano, T. Yoshida, and M. Fujishima, IEEE MTT-S International Microwave Symposium (IMS), 2015/05/21, Without Invitation, English, IEEE MTT-S, Phoenix, Arizona
  22. On-wafer transmission line measurement above 100 GHz, Shuhei Amakawa, Amakawa, Shuhei; Katayama, Kosuke; Takano, Kyoya; Yoshida, Takeshi; Fujishima, Minoru, Thailand-Japan Microwave (TJMW), 2014/11/27, With Invitation, English, Bangkok, Thailand, It is well known that very long transmission lines are required to cover low frequencies by the thru-reflect-line (TRL) calibration algorithm, which also provides a solid foundation for propagation constant measurement. An obvious corollary might seem that only short lines are required to measure the propagation constant at high frequencies. Experimental results up to 325 GHz suggest that that is not the case. Very long lines are actually required to reliably evaluate the attenuation constant, especially above 100 GHz.
  23. Theory of gain and stability of small-signal amplifiers with lossless reciprocal feedback, Shuhei Amakawa, Asia-Pacific Microwave Conference (APMC), 2014/11/07, Without Invitation, English, Sendai, Japan, The gain and the stability of composite amplifiers consisting of a core 2-port amplifier and a lossless reciprocal embedding network is studied theoretically with particular interest in the design of near-fmax amplifiers. Design equations for finding an optimal embedding network that gives the highest MAG (maximum available gain) under a given stability requirement are presented. How such an embedding network could be synthesized is briefly sketched.
  24. Design of well-behaved low-loss millimetre-wave CMOS transmission lines, Shuhei Amakawa, 18th IEEE Workshop on Signal and Power Integrity (SPI), 2014/05/12, Without Invitation, English, Ghent, Belgium, It is a challenge to design single-mode transmission lines for above 100 GHz following strict design rules of modern CMOS processes. This paper reports characteristics of three types of microstrip lines in 65nm CMOS up to 325 GHz, designed with or without using an auto-dummy exclusion layer. The lowestloss design among the three is a shielded microstrip protected with an exclusion layer. The metal density requirement is met, as is commonly done, by placing sidewalls as far from the signal line as allowed by the design rules. The other two designs are microstrips without sidewalls or the exclusion layer. One of them has high-density auto dummy fill inserted by the foundry and shows significantly higher attenuation than the shielded microstrip. The other is filled with low-density fill that prevents auto dummy fill from being inserted. It is only marginally lossier than the shielded microstrip. The microstrips without sidewalls are found to exhibit more well-behaved attenuation especially above 100 GHz. The frequency dependence of the attenuation of the shielded microstrip, on the other hand, exhibits ripples, indicating possible presence of spurious modes. Attenuation constants estimated by multiline TRL (thru-reflect-line) from lines of various lengths indicate that the longest line measured should be very long, perhaps 2mm or longer, for the estimates to be reliable.

Awards

  1. 2017/09/01, IEEE International Symposium on Radio-Frequency Integration Technology RFIT Award, IEEE International Symposium on Radio-Frequency Integration Technology General Chair
  2. 2019/05/23, Global Symposium on Millimeter Waves 2019 (GSMM 2019) Best Paper Award, GSMM2019 General ChairGSMM2019 Award Committee Chair, 300-GHz Wireless Data Transmission System with Low-SNR CMOS RF Front End
  3. 2015, IEEE International Symposium on Radio-Frequency Integration Technology RFIT Award
  4. 2020/02/17, 2020 IEEE International Solid-State Circuits Conference 2019 Demonstration Session Certificate of Recognition, International Solid-State Circuits Conference (2020 ISSCC), An 80Gb/s 300GHz-Band Single-Chip CMOS Transceiver

External Funds

Acceptance Results of Competitive Funds

  1. KAKENHI, 2013, 2014
  2. KAKENHI, Study of substrate bias effect on MOSFET variability, 2007, 2008
  3. KAKENHI, Signal Integrity of Nano-Scale interconnect and Circuit, 2006, 2009
  4. KAKENHI, Development of On-chip Nano-Scale Network Based on Communication Theory, 2004, 2007
  5. KAKENHI, 2016, 2018
  6. Program for Creating STart-ups from Advanced Research and Technology(START), 2016/04/01, 2017/03/31

Social Activities

Organizing Academic Conferences, etc.

  1. 2020 IEEE International Symposium on Radio-Frequency Integration Technology, TPC Subcomittee Chair, 2020/01, 2020/09
  2. Design, Test, Integration & Packaging of MEMS/MOEMS, Programme Committee, 2013/, 2016/
  3. Microwave Workshops & Exhibition, Technical Program Committee, 2016/01, 2016/12
  4. 2017IEEE International Symposium on Radio-Frequency Integration Technology, Technical Program Committee Member, 2016/01, 2017/09
  5. 2018 IEEE International Symposium on Radio-Frequency Integration Technology, Technical Program Committee, 2017/12, 2018/08
  6. 2018 Asia-Pacific Microwave Conference, Technical Program Committee, 2017/11, 2018/12
  7. Design, Test, Integration & Packaging of MEMS/MOEMS 2017, Programme Committee, 2016/, 2017/

History as Peer Reviews of Academic Papers

  1. 2019, IEICE Electronics Express, Others, Reviewer, 1
  2. 2019, IEEE Terahertz Science and Technology, Others, Reviewer, 1
  3. 2019, IEEE Access, Others, Reviewer, 1
  4. 2019, Electronics Letters, Editor, Associate Editor, 25
  5. 2014, IEICE Transactions on Electronics, Editor, Associate Editor
  6. 2014, Japanese Journal of Applied Physics, Reviewer
  7. 2014, IEICE Electronics Express, Reviewer
  8. 2014, IEEE Microwave and Wireless Components Letters, Reviewer
  9. 2014, Electronics Letters, Reviewer, 4
  10. 2015, Electronics Letters, Editor, Associate Editor, 14
  11. 2015, IEEE Sensors Journal, Others, Reviewer, 1
  12. 2015, IEEE Transactions on Circuits and Systems I, Others, Reviewer, 1
  13. 2015, IEICE Electronics Express, Others, Reviewer, 2
  14. 2015, Japanese Journal of Applied Physics, Others, Reviewer, 1
  15. 2015, Microsystem Technologies, Others, Reviewer, 1
  16. 2016, IEICE Transactions on Electronics, Editor, Associate Editor, 2
  17. 2016, IEEE Transactions on Microwave Theory and Techniques, Reviewer, 1
  18. 2016, Electronics Letters, Editor, Associate Editor, 33
  19. 2017, Electronics Letters, Editor, Associate Editor, 42
  20. 2017, IEEE Transactions on Circuits and Systems I, Others, Reviewer, 1
  21. 2017, IEEE Transactions on Microwave Theory and Techniques, Others, Reviewer, 1
  22. 2017, IEICE Electronics Express, Others, Reviewer, 3
  23. 2017, Microsystem Technologies, Others, Reviewer, 1
  24. 2018, Electronics Letters, Editor, Associate Editor, 31