SEIICHI MIYAZAKI

Last Updated :2025/03/26

Affiliations, Positions
Research Executive Vice President
E-mail
semiya1hiroshima-u.ac.jp
Self-introduction
Seiichi Miyazaki is a graduate of Hiroshima University's School of Enginieering.He specializes in semiconductor engineering.He has engaged in research on materials,processes,and device for about 40 years,and in his research on interfacial evaluation and control aimed at enhancing the functionality and reliability of MOS devices,he has accumulated achievements in the determination of energy band alignments in various MOS structures, high-sensitivity measurements of the density and energy distribution of defect states, and quantitative evaluation of interfacial dipoles. In addition, as fundamental research for the functional enhancement of MOS devices,he has promoted the self-assembled formation of Si-Ge quantum dots and their practical appliication of devices,and developed fundamental elemental technologies indeispensable for device implementation,such as technologies for high-density integration of quantum dots, dot size distribution and position control,control of electronic states by impurity doping,modulation of potential profile in quantum dots by introduction of Ge cores, controls of density of states and work-function by silicidation,potential measurement of charged and discharged dots,and more.He made pioneering demonstrations of room-temperature,multi-level memory operations in floating-gate transistors using quantum dots as charge strorage nodes,and also pioneered the developments of light-emitting and electron-demission devices utilizing high-density 3D integrated structures of Si-Ge quantum dots. Since April 2024,he has served as Executive Vice President for Research at Hiroshima University.

Basic Information

Major Professional Backgrounds

  • 2024/04, 2025/03, Hokkaido University, Research Center For Integrated Quantum Electronics, Visiting Professor
  • 2021/04, 2024/03, Nagoya University, Dean, School of Engineering/Graduate School of Engineering
  • 2019/04, 2022/03, Nagoya University, Synchrotron Radiation Research Center, Director
  • 2017/05, 2024/03
  • 2017/04, 2024/03, Nagoya University, Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics, Professor
  • 2017/04, 2019/03, Nagoya University, Graduate School of Engineering
  • 2011/09, 2015/03, University of Tsukuba
  • 2010/10, 2017/11
  • 2010/08, 2024/03, Hiroshima University, Resrarch Institute for Nanodevices
  • 2010/06, 2024/03, Nagoya University, Professor
  • 2009/09, The Japan Society of Applied Physics, Fellow
  • 2002/04, 2010/05, Hiroshima University, Professor
  • 2001/04, 2002/03, Hiroshima University
  • 1992/04, 2001/03, Hiroshima University
  • 1986/04, 1992/03, Hiroshima University, Assistant

Academic Degrees

  • Hiroshima University
  • Doctor of Engineering, Hiroshima University

Affiliated Academic Societies

  • Japan Society of Applied Physics
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  • The Institute of Electronics, Information and Communication Engineers
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  • The Japan Scoiety of Vacuum and Surface Science
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  • The Materials Research Society of Japan
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  • Material Research Society
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  • The Electrochemical Society
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  • Japan Chapter, Electrochemical Society
  • Japanese Society for Engineering Education
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Research Activities

Academic Papers

  1. Electron emission from alignment-controlled multiple stacks of SiGe nanodots embedded in Si structures, Mat. Sci. in Semiconductor Processing, 174, 108227 (5 pages), 202405
  2. Self-assembling mechanism of Si-QDs on thermally-grown SiO2, Jpn. J. Appl. Phys., Accepted Manuscript online 4 March 2024, 202404
  3. Self-assembling formation of Si-QDs on SiO2 line patterns, Jpn. J. Appl. Phys., 63(3), 03SP04 (4 pages), 202403
  4. Formation of β-FeSi2 NDs by SiH4-exposure to Fe-NDs, Jpn. J. Appl. Phys., 63(2), 02SP99 (4 pages), 202402
  5. Formation of ultra-thin nickel silicide on SiO2 using Si/Ni/Si structures for oxidation control, Jpn. J. Appl. Phys., 63(2), 02SP72 (5 pages), 202402
  6. Formation of germanene with free-standing lattice constant, Surface Science, 738, 122382 (6 pages), 202312
  7. Alignment control of self-assembling Si quantum dots, Mat. Sci. in Semiconductor Processing, 162, 107526 (5 pages), 20230801
  8. Layer transfer of ultrathin Ge crystal segregated on Al/Ge(111) structure, Jpn. J. Appl. Phys., 62(SG), SG1007 (8 pages), 202306
  9. Room Temperature Light Emission from Superatom-like Ge–Core/Si–Shell Quantum Dots, Nanomaterials, 13(9), 1475 (8 pages), 20230426
  10. Characterization of magnesium channeled implantation layers in GaN(0001), Jpn. J. Appl. Phys., 62(SC), SC1080 (6 pages), 202304
  11. Formation of ultra-thin NiGe film with single crystalline phase and smooth surface, Jpn. J. Appl. Phys., 62(SC), SC1027 (6 pages), 202304
  12. Evaluation of chemical structure and Si segregation of Al/Si(111), Jpn. J. Appl. Phys., 62(SC), SC1059 (8 pages), 202304
  13. Effects of Cl Passivation on Al2O3/GaN Interface Properties, Jpn. J. Appl. Phys., 62(SA), SA1002 (5 pages), 202301
  14. Study on Electron Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures, IEICE Transactions on Electronics, E105.C(10), 610-615, 20221001
  15. Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots, IEICE Transactions on Electronics, E105.C(10), 616-621, 20221001
  16. 工学教育へ高まる期待, 工学教育（J. of JSEE）, 70(5), 5_1, 20220920
  17. Impact of substrate heating during Al deposition and post annealing on surface morphology, Al crystallinity, and Ge segregation in Al/Ge(111) structure, Jpn. J. Appl. Phys., 61(SH), SH1012 (9 pages), 202207
  18. Characterization of electronic charged states of high density self-aligned Si-based quantum dots evaluated with AFM/Kelvin probe technique, Jpn. J. Appl. Phys., 61(SD), SD1012 (5 pages), 202206
  19. Study on silicidation reaction of Fe nanodots with SiH4, Applied Physics Express, 15(5), 055503 (4 pages), 202205
  20. Characterization of Light Emission Properties of Impurity Doped Ge/Si Core–Shell Quantum Dots, ECS Transactions, 109(4), 335-341, 2022
  21. Effect of substrate temperature on plasma-enhanced self-assembling formation of high-density FePt nanodots, Jpn. J. Appl. Phys., 61(SA), SA1008 (5 pages), 202201
  22. Segregation control for ultrathin Ge layer in Al/Ge(111) system, Jpn. J. Appl. Phys., 61(SA), SA1014 (7 pages), 202201
  23. Single germanene phase formed by segregation through Al(111) thin films on Ge(111), 2D Materials, 8(4), 045039-045039, 202110
  24. Epitaxial growth of massively parallel germanium nanoribbons by segregation through Ag(1 1 0) thin films on Ge(1 1 0), Appl. Surf. Sci., 550, 149236 (7 pages), 20210601
  25. Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal, Jpn. J. Appl. Phys., 60(SB), SBBK05 (6 pages), 202105
  26. Energy band diagram for SiO2/Si system as evaluated from UPS analysis under vacuum ultraviolet with variable incident photon energy, Jpn. J. Appl. Phys., 60(SA), SAAC02 (6 pages), 202101
  27. Impact of Boron Doping and H2 Annealing on Light Emission from Ge/Si Core-Shell Quantum Dots, ECS Transactions, 104(4), 105-112, 2021
  28. Effect of B-doping on photoluminescence properties of Si quantum dots with Ge core, Materials Science in Semiconductor Processing, 120, 105250 (5 pages), 202012
  29. Characterization of photoluminescence from Si quantum dots with B δ-doped Ge core, Materials Science in Semiconductor Processing, 119(15), 105215 (4 pages), 20201115
  30. Crystallization of Ge Thin Films on Sapphire(0001) by Thermal Annealing, ECS Transactions, 98(5), 505-511, 20200922
  31. Characterization of Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots by Using a Magnetic AFM Probe, ECS Transactions, 98(5), 493-498, 20200922
  32. Electron Field Emission from Multiply-Stacked Si Quantum Dots Structures with Graphene Top-Electrode, ECS Transactions, 98(5), 429-434, 20200922
  33. Complex dielectric function of Si oxide as evaluated from photoemission measurements, Jpn. J. Appl. Phys., 59(SM), SMMB04 (8 pages), 202007
  34. Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface, Jpn. J. Appl. Phys., 59(SG), SGGK15 (6 pages), 202004
  35. Impact of surface pre-treatment on Pt-nanodot formation induced by remote H2-plasma exposure, Jpn. J. Appl. Phys., 58(SI), SIIA15 (4 pages), 201908
  36. Effect of H2-dilution in Si-cap formation on photoluminescence intensity of Si quantum dots with Ge core, Jpn. J. Appl. Phys., 58(SI), SIIA01 (4 pages), 201908
  37. Comparative study of photoluminescence properties obtained from SiO2/GaN and Al2O3/GaN structures, Jpn. J. Appl. Phys., 58(SI), SIIB22 (5 pages), 201908
  38. Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots, IEICE Transactions on Electronics, E102.C(6), 458-461, 20190601
  39. Impact of remote plasma oxidation of a GaN surface on photoluminescence properties, Jpn. J. Appl. Phys., 58(SE), SEEC02 (4 pages), 201906
  40. Evaluation of the potential distribution in a multiple stacked Si quantum dots structure by hard X-ray photoelectron spectroscopy, Jpn. J. Appl. Phys., 58(SA), SAAE01 (4 pages), 201902
  41. Photoemission-Based Characterization of Gate Dielectrics and Stack Interfaces, ECS Transactions, 92(4), 11-19, 2019
  42. Characterization of electron charging and transport properties of Si-QDs with phosphorus doped Ge core, Semiconductor Science and Technology, 33(12), 124021, 201812
  43. Activation mechanism of TiOx passivating layer on crystalline Si, Applied Physics Express, 11(10), 102301 (4 pages), 201810
  44. Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N2 ambient, Jpn. J. Appl. Phys., 57(6S1), 06HD08 (5 pages), 201806
  45. Segregated SiGe ultrathin layer formation and surface planarization on epitaxial Ag(111) by annealing of Ag/SiGe(111) with different Ge/(Si + Ge) compositions, Jpn. J. Appl. Phys., 57(4S), 04FJ05 (6 pages), 201804
  46. High Density Formation and Magnetoelectronic Transport Properties of Fe3Si Nanodots, ECS Transactions, 86(7), 131-138, 2018
  47. Impact of phosphorus doping to multiple-stacked Si quantum dots on electron emission properties, Materials Science in Semiconductor Processing, 70, 183-187, 20171101
  48. Magnetoelectronic transport of double stack FePt nanodots, Appl. Phys. Lett, 111(5), 052403 (4 pages), 20170731
  49. Low-temperature formation of crystalline Si:H/Ge:H heterostructures by plasma-enhanced CVD in combination with Ni-nanodots seeding nucleation, Jpn. J. Appl. Phys., 56(6S1), 06GG07 (4 pages), 201706
  50. Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors, IEICE TRANSACTIONS ON ELECTRONICS, E100C(5), 468-474, 201705
  51. Photoemission study on electrical dipole at SiO2/Si and HfO2/SiO2 interfaces, Jpn. J. Appl. Phys., 56(4S), 04CB04 (6 pages), 201704
  52. Nano spin-diodes using FePt-NDs with huge on/off current ratio at room temperature, SCIENTIFIC REPORTS, 6, 33409, 201609
  53. Evaluation of valence band top and electron affinity of SiO2 and Si-based semiconductors using X-ray photoelectron spectroscopy, Jpn. J. Appl. Phys., 55(8S2), 08PC06 (5 pages), 201608
  54. Impact of embedded Mn nanodots on resistive switching characteristics of Si-rich oxides as measured in Ni-electrode metal–insulator–metal diodes, Jpn. J. Appl. Phys., 55(6S1), 06GH07 (5 pages), 201606
  55. Bonding and Electron Energy-Level Alignment at Metal/TiO2 Interfaces: A Density Functional Theory Study, The Journal of Physical Chemistry, 120(10), 5549-5556, 20160317
  56. Photoluminescence study of high density Si quantum dots with Ge core, Journal of Applied Physics, 119(3), 033103 (5 pages), 20160121
  57. Processing and characterization of Si/Ge quantum dots, 2016 IEEE International Electron Devices Meeting (IEDM), 826 (33.2.1)-830 (33.2.4), 2016
  58. Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements, IEICE TRANSACTIONS ON ELECTRONICS, E98C(5), 406-410, 201505
  59. High-Resolution Photoemission Study of High-k Dielectric Bilayer Stack on Ge(100), ECS Transactions, 69(10), 165-170-170, 2015
  60. Application of remote hydrogen plasma to selective processing for Ge-based devices: Crystallization, etching, and metallization, Jpn. J. Appl. Phys., 53(11S), 11RA02 (4 pages), 201411
  61. Effect of electric field concentration using nanopeak structures on the current–voltage characteristics of resistive switching memory, AIP Advances, 4(8), 087110 (7 pages), 201408
  62. High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy, IEICE TRANSACTIONS ON ELECTRONICS, E97C(5), 397-400, 201405
  63. Selective Growth of Self-Assembling Si and SiGe Quantum Dots, IEICE TRANSACTIONS ON ELECTRONICS, E97C(5), 393-396, 201405
  64. Highly-Crystallized Ge:H Film Growth from GeH4 Very High Frequency Inductively-Coupled Plasma: Crystalline Nucleation Initiated by Ni Nanodots, Jpn. J. Appl. Phys, 52(11S), 11NA04 (3 pages)-11NA04-3, 201311
  65. Highly-Crystallized Ge:H Film Growth from GeH4 Very High Frequency Inductively-Coupled Plasma: Crystalline Nucleation Initiated by Ni Nanodots, Jpn. J. Appl. Phys, 52(11S), 11NA04 (3 pages), 201311
  66. Characterization of Local Electronic Transport through Ultrathin Au/Highly-Dense Si Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy, IEICE TRANSACTIONS ON ELECTRONICS, E96C(5), 718-721, 201305
  67. Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System, IEICE TRANSACTIONS ON ELECTRONICS, E96C(5), 708-713, 201305
  68. Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior, IEICE TRANSACTIONS ON ELECTRONICS, E96C(5), 702-707, 201305
  69. X-Ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures, IEICE TRANSACTIONS ON ELECTRONICS, E96C(5), 680-685, 201305
  70. Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer, IEICE TRANSACTIONS ON ELECTRONICS, E96C(5), 674-679, 201305
  71. Characterization of Ultrathin Ta-oxide Films Formed on Ge(100) by ALD and Layer-by-Layer Methods, Journal of Physics: Conference Series, 417(15th International Conference on Thin Films (ICTF-15) 8–11 November 2011, Kyoto, Japan), 012013 (6 pages), 20130301
  72. Determination of Energy Band Alignment in Ultrathin Hf-based Oxide/Pt System, Journal of Physics: Conference Series, 417(15th International Conference on Thin Films (ICTF-15) 8–11 November 2011, Kyoto, Japan), 012012 (6 pages), 20130301
  73. Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Application, MRS Online Proceedings Library, 1510(2), 7-12, 20130228
  74. Photoexcited carrier transfer in a NiSi-nanodots/Si-quantum-dots hybrid floating gate in MOS structures, IEICE Transactions on Electronics, E96-C(5), 694-698, 2013
  75. Study of electron transport characteristics through self-aligned Si-based quantum dots, J. Appl. Phys., 112(10), 104301 (5 pages), 20121121
  76. Evaluation of Charge Trapping Properties of Microcrystalline Germanium Thin Films by Kelvin Force Microscopy, Journal of Non-Crystalline Solids, 358(17), 2086-2089-2089, 20120901
  77. Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering, IEICE TRANSACTIONS ON ELECTRONICS, E95C(5), 879-884, 201205
  78. Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots with High Areal Dot Density, Jpn. J. Appl. Phys, 51(4S), 04DG08 (5 pages), 201204
  79. Formation of High-Density Pt Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing Using Thermal Plasma Jet for Floating Gate Memory, Jpn. J. Appl. Phys., 50(8S2), 08KE06 (4pages)-08KE06-4, 201108
  80. Formation of High-Density Pt Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing Using Thermal Plasma Jet for Floating Gate Memory, Jpn. J. Appl. Phys., 50(8S2), 08KE06 (4pages), 201108
  81. Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor, IEICE TRANSACTIONS ON ELECTRONICS, E94C(5), 730-736, 201105
  82. Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities, IEICE TRANSACTIONS ON ELECTRONICS, E94C(5), 717-723, 201105
  83. Impact of Annealing Ambience on Resistive Switching in Pt/TiO2/Pt Structure, IEICE TRANSACTIONS ON ELECTRONICS, E94C(5), 699-704, 201105
  84. Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell, Jpn. J. Appl. Phys., 50(4S), 04DD04 (4 pages)-0, 201104
  85. Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor Fabrication, Jpn. J. Appl. Phys., 50(3S), 03CB10 (8 pages), 201103
  86. Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures, Key Engineering Materials, 470, 135-139-+, 201102
  87. Formation and Characterization of Silicon-Quantum-Dots/Metal-Silicide-Nanodots Hybrid Stack and its Application to Floating Gate Functional Devices, ECS Transactions, 41(7), 93-98, 2011
  88. Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices, Physica E: Low-dimensional Systems and Nanostructures, 42(10), 2602-2605, 201009
  89. Characterization of Electronic Charged States of Impurity Doped Si Quantum Dots Using Atomic Force Microsope/Kelvin Probe Technique, Jpn. J. Appl. Phys., 49(6R), 065002 (4 pages)-0650024, 201006
  90. Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication, Applied Physics Express, 3(6), 061401 (3 pages), 201006
  91. Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots, IEICE TRANSACTIONS ON ELECTRONICS, E93C(5), 569-572, 201005
  92. Light-Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in Metal–Oxide–Semiconductor Structures, Jpn. J. Appl. Phys., 49(4S), 04DJ04 (4 pages)-04DJ04-4, 201004
  93. Activation of B and As in Ultrashallow Junction During Millisecond Annealing Induced by Thermal Plasma Jet Irradiation, Jpn. J. Appl. Phys., 49(4S), 04DA02 (4 pages), 201004
  94. Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Technique, Jpn. J. Appl. Phys., 49(3S), 03CA08 (4 pages), 201003
  95. Characterization of Interfaces between Chemically Cleaned or Thermally Oxidized Germanium and Metals, ECS Trans., 33(6), 253-262, 2010
  96. Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots, Jpn J Appl Phys, 49(1R), 014001 (4 pages)-014001-4, 201001
  97. Characterization of Interfacial Reaction and Chemical Bonding Features of LaOx/HfO2 Stack Structure Formed on Thermally-grown SiO2/Si(100), Microelectronic Engineering, 86(7-9), 1650-1653, 200907
  98. Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High-k CMOSFETs, IEEE Electron Device Letters, 30(5), 466-468, 200905
  99. Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories, IEICE TRANSACTIONS ON ELECTRONICS, E92C(5), 616-619, 200905
  100. Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application, Solid State Phenomena, 154, 95-100, 200904
  101. Millisecond Rapid Thermal Annealing of Si Wafer Induced by High-Power-Density Thermal Plasma Jet Irradiation and Its Application to Ultrashallow Junction Formation, Jpn. J. Appl. Phys., 48(4S), 04C011 (4 pages), 200904
  102. Temperature Dependence of Capacitance of Si Quantum Dot Floating Gate MOS Capacitor, Journal of Physics: Conference Series, 150(Electronic Quantum Transport), 022071 (4 pages), 20090331
  103. Physics of Nano-contact between Si Quantum Dots and Inversion Layer, ECS Trans., 25(7), 463-469, 2009
  104. The Influence of Defects and Impurities on Electrical Properties of High-k Dielectrics, Materials Science Forum, 608, 55-109, 200812
  105. Formation of Low-Defect-Concentration Polycrystalline Silicon Films by Thermal Plasma Jet Crystallization Technique, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(8), 6949-6952, 200808
  106. Interface properties and effective work function of Sb-predoped fully silicided NiSi gate, SURFACE AND INTERFACE ANALYSIS, 40(6-7), 1126-1130, 200806
  107. Cathode Electron Injection Breakdown Model and Time Dependent Dielectric Breakdown Lifetime Prediction in High-k/Metal Gate Stack p-Type Metal-Oxide-Silicon Field Effect Transistors, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(5), 3326-3331, 200805
  108. Progress on charge distribution in multiply-stacked Si quantum dots/SiO2 structure as evaluated by AFM/KFM, IEICE TRANSACTIONS ON ELECTRONICS, E91C(5), 712-715, 200805
  109. Effect of He Addition on the Heating Characteristics of Substrate Surface Irradiated by Ar Thermal Plasma Jet, Thin Solid Films, 516(11), 3680-3683, 20080401
  110. Nucleation Study of Hydrogenated Microcrystalline Silicon (μc-Si:H) Films Deposited by VHF-ICP, Thin Solid Films, 516(11), 3497-3501, 20080401
  111. Crystallization of Amorphous Ge Films Induced by Semiconductor Diode Laser Annealing, Thin Solid Films, 516(11), 3595-3600, 20080401
  112. Comprehensive analysis of positive and negative bias temperature instabilities in high-k/metal gate stack metal-oxide-silicon field effect transistors with equivalent oxide thickness scaling to sub-1 nm, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 2354-2359, 200804
  113. In-situ measurement of temperature variation in Si wafer during millisecond rapid thermal annealing induced by thermal plasma jet irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 2460-2463, 200804
  114. Self-assembling formation of Ni nanodots on SiO2 induced by remote H-2 plasma treatment and their electrical charging characteristics, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 3099-3102, 200804
  115. Characterization of multistep electron charging and discharging of a silicon quantum dots floating gate by applying pulsed gate biases, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 3103-3106, 200804
  116. Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Annealing and Its Application to Floating Gate Memory, ECS Trans., 16(9), 177-182, 2008
  117. Effect of Annealing on Electronic Characteristics of HfSiON Films fabricated by Damascene Gate Process, ECS Trans., 16(5), 521-526, 2008
  118. In-situ Monitoring of Si Wafer Temperature during Millisecond Rapid Thermal Annealing, ECS Trans., 13(1), 31-36, 2008
  119. Theory of Metal/Dielectric Interfaces -Breakdown of Schottky Barrier Limits-, ECS Trans., 13(2), 21-27, 2008
  120. Practical dual-metal-gate dual-high-k CMOS integration technology for hp 32 nm LSTP utilizing process-friendly TiAlN metal gate, International Electron Device Meeting 2007 (IEDM)(Washington DC), 20.4, 531-534-+, 200712
  121. Charge Injection Characteristics of NiSi-Dots/Silicon-Quantum-Dots Stacked Floating Gate in MOS Capacitors, 3rd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2007)(Sendai), P-08, 35-36, 200711
  122. High Rate Growth of Crystalline Ge Films at Low Temperatures by Controlling 60MHz Inductively-Coupled Plasma of H2-diluted GeH4, 3rd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2007)(Sendai), P-07, 33-34, 200711
  123. Formation of PtSi Nanodots Induced by Remote H2 Plasma, 3rd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2007), Sendai, P-09, 37-38, 200711
  124. Impact of Low Temperature Anneal on Effective Work Function and Chemical Bonding Features for Ru/HfSiON/SiON Gate Stack, Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-V)(Tokyo), OA3-1, 215-216, 200711
  125. Evaluation of Effective Work Function in Ru/HfSiON/SiO2 Gate Stack Structures – Thickness Dependence in Bottom SiO2 layer, Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-V)(Tokyo), P.-47, 181-182, 200711
  126. The Impact of Post Deposition NH3-Anneal on La Oxide Films Formed by MOCVD Using La(DPM)3, Fifth International Symposium on Control of Semiconductor Interfaces, (ISCSI-V)(Tokyo), OA3-8, 227-228, 200711
  127. High Efficiency Dopant Activation Induced by Thermal Plasma Jet Crystallization of Heavily-Phosphorus-Doped Amorphous Si Films, 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V)(Tokyo), OA1, 51-52, 200711
  128. Electroluminescence from Multiple-Stacked Structures of Impurity Doped Si Quantum Dots, 2007 International Conference on Solid State Devices and Materials (SSDM2007)(Tsukuba), E-1-4, 106-107, 200709
  129. Dopant Activation Induced by Thermal Plasma Jet Crystallization of Heavily-Phosphorus-Doped Amorphous Si films, The Fourteenth International Workshop on ACTIVE-MATRIX FLATPANEL DISPLAY AND DEVICES(Awaji), 3-3, 33-36, 200707
  130. Fermi-level pinning position modulation by Al-containing metal gate for cost-effective dual-metal/dual-high-k CMOS, The 2008 Symposium on VLSI Technology(Kyoto), 5A-1, 66-67-+, 200706
  131. Hafnium 4f Core-level Shifts Caused by Nitrogen Incorporation in Hf-based High-k Gate Dielectrics, Jpn. J. Appl. Phys., 46(6A), 3507-3509-3509, 200706
  132. Characterization of Metal/High-k Structures Using Monoenergetic Positron Beams, Jpn. J. Appl. Phys., 46(5B), 3214-3218-3218, 200705
  133. Evaluation of dielectric reliability of ultrathin HfSiOxNy in metal-gate capacitors, IEICE TRANSACTIONS ON ELECTRONICS, E90C(5), 962-967, 200705
  134. Luminescence Study of Multiply-Stacked Structures Consisting of Impurity-Doped Si Quantum Dots and Ultrathin SiO2, The 2007 International Meeting for Future of Electron Devices, Kansai (IMFEDK)(Osaka), PB-5, 121-122, 200704
  135. Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON, Jpn. J. Appl. Phys., 46(4B), 1891-1894-1894, 200704
  136. Ultrarapid Thermal Annealing Induced by DC Arc Discharge Plasma Jet Its Application, 5th International Symposium Nanotechnology (JAPAN NANO 2007)(Tokyo), P3-2, 144-145, 200702
  137. Comparison of Defect Densities in Excimer Laser and Thermal Plasma Jet Crystallized Si Films, 3rd International TFT Conference, Rome, Italy, Jan., 3rd International TFT Conference, Rome, Italy, Jan. 25-26, 2007, P21, pp, 204-207., 200701
  138. Comparison of Defect Densities in Excimer Laser and Thermal Plasma Jet Crystallized Si Films, 3rd International TFT Conference(Italy), P21, 204-207, 200701
  139. Electrical Characteristics of Lightly-Doped Si Films Crystallized by Thermal Plasma Jet Irradiation, Trans. of MRS-J, 32(2), 465-468, 2007
  140. Tight distribution of dielectric characteristics of HfSiON in metal gate devices, ECS Trans., 11(4), 3-11-11, 2007
  141. Vacancy-Type Defects in MOSFETs with High-k Gate Dielectrics Probed by Monoenergetic Positron Beams, ECS Trans., 11(4), 81-90-90, 2007
  142. Role of the Ionicity in Defect Formation in Hf-based Dielectrics, ECS Trans., 11(4), 199-211-211, 2007
  143. Vacancy-fluorine complexes and their impact on the properties of metal-oxide transistors with high-k gate dielectrics studied using monoenergetic positron beams, J. Appl. Phys, 102(5), 054511-1 – 054511-7, 2007
  144. Growth of Si Crystalline in SiOx Films Induced by Millisecond Rapid Thermal Annealing Using Thermal Plasma Jet, 3rd International TFT Conference(Italy), 5a.3(3), 82-85-380, 200701
  145. Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation, Jpn. J. Appl. Phys., 46(3B), 1276-1279-1279, 2007
  146. Control of Substrate Surface Temperature in Millisecond Annealing Technique Using Thermal Plasma Jet, Thin Solid Films, 515(12), 4897-4900-4900, 2007
  147. Theoretical Studies on Metal/High-k Gate Stacks, ECS Trans., 6(1), 191-204-204, 2007
  148. High rate growth of highly-crystallized Ge films on quartz from VHF inductively-coupled plasma of GeH4+H-2, PRICM 6: SIXTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, PTS 1-3, 561-565, 1209-1212, 2007
  149. Characterization of electronic charged states of nickel silicide nanodots using AFM/kelvin probe technique, PRICM 6: SIXTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, PTS 1-3, 561-565, 1213-1216, 2007
  150. Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation, J. Appl. Phys., 100(6), 064501-1 – 064501-5, 2006
  151. High-rate Growth of Highly-crystallized Si Films from VHF Inductively-Coupled Plasma CVD, Thin Solid Films, 511-512, 265-270-270, 2006
  152. The Application of Very High Frequency Inductively-coupled Plasma to High-Rate Growth of Microcrystalline Silicon Films, J. Non-Cryst. Solid, 352(9-20), 911-914-914, 2006
  153. Characterization of HfSiON gate dielectrics using monoenergetic positron beams, J. Appl. Phys., 99(5), 054507-1 – 054507-6, 2006
  154. Analysis of Transient Temperature Profile During Thermal Plasma Jet Annealing of Si Films on Quartz Substrate, Jpn. J. Appl. Phys., 45(5B), 4355-4357-4357, 2006
  155. In-Situ Observation of Rapid Crystalline Growth Induced by Excimer Laser Irradiation to Ge/Si Stacked Structure, Thin Solid Films, 508(1-2), 53-56-56, 2006
  156. Nitridation of Ge(100) Surfaces by Vacuum-ultra violet (VUV) Irradiation in NH3 Ambience, Trans. of the Mat. Res. Soc. of Japan, 31(1), 153-156-156, 2006
  157. Crystallization of Si in Millisecond Time Domain Induced by Thermal Plasma Jet Irradiation, Jpn. J. Appl. Phys., 45(5B), 4313-4320-4320, 2006
  158. Multistep Electron Charging to and Discharging from Silicon-Quantum-Dots Floating Gate in nMOSFETs, Trans. of MRS-J, 31(1), 137-140-140, 2006
  159. Influence of thermal annealing on defect states and chemical structures in ultrathin Al2O3/SiN/poly-Si, Trans. of the Mat. Res. Soc. of Japan, 31(1), 149-152-152, 2006
  160. Physics of Metal/High-k Interfaces, Physics of Metal/High-k Interfaces, 3(3), 129-140-140, 2006
  161. An Unfavorable Effect of Nitrogen Incorporation on Reduction in the Oxygen Vacancy Formation Energy, Trans. of the Mat. Res. Soc. of Japan, 31(1), 129-132, 2006
  162. Characterization of atom diffusion in polycrystalline Si/SiGe/Si stacked gate, IEICE TRANSACTIONS ON ELECTRONICS, E88C(4), 646-650, 200504
  163. Electrical characterization of aluminum-oxynitride stacked gate dielectrics prepared by a layer-by-layer process of chemical vapor deposition and rapid thermal nitridation, IEICE TRANSACTIONS ON ELECTRONICS, E88C(4), 640-645, 200504
  164. High-Rate Growth of Highly-Crystallized Si Films from VHF Inductively-Coupled Plasma CVD, Trans. of MRS-J, 30(1), 279-282, 2005
  165. Fabrication of Polycrystalline Si Thin Film Transistor Using Plasma Jet Crystalliztion Technique, Trans. of MRS-J, 30(1), 283-286, 2005
  166. Electrical Characterization of HfAlOx/SiON Dielectric Gate Capacitors, Trans. of the Mat. Res. Soc. of Japan, 30(1), 205-208, 2005
  167. The Role of Oxygen-related Defects on the Reliabilities of HfO2-based High-k Gate Insulators, Trans. of the Mat. Res. Soc. of Japan, 30(1), 191-195, 2005
  168. Characterization of Charge Trapping and Dielectric Breakdown of HfAlOX/SiON Dielectric Gate Stack, ECS Trans., 1(1), 163-172, 2005
  169. Characterization of Electronic Charged States of Silicon Nanocrystals as a Floating Gate in MOS Structures, Mat. Res. Soc. Symp. Proc., 830, 249-254, 2005
  170. Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots, IEICE Trans. on Electronics, E88-C(4), 709-712-712, 2005
  171. Application of Plasma Jet Crystallization Technique to Fabrication of Thin-Film Transistor, Jpn. J. Appl. Phys., 44(3), L108-L110-L110, 2005
  172. Crystallization of Si Films on Glass Substrate Using Thermal Plasma Jet, Thin Solid Films, 487(1-2), 122-125-125, 2005
  173. A New Crystallization Technique of Si Films on Glass Substrate Using Thermal Plasma Jet, Appl. Surf. Sci., 244(1-4), 8-11-11, 2005
  174. Influence of Substrate dc Bias on Crystallinity of Silicon Films Grown at a High Rate from Inductively-coupled Plasma CVD, Appl. Surf. Sci., 244(1-4), 39-42-42, 2005
  175. Analysis of Leakage Current through Al/HfAlOx/SiONx/Si(100) MOS Capacitors, Trans. of the Mat. Res. Soc. of Japan, 30(1), 197-200, 2005
  176. Praseodymium silicate formed by postdeposition high-temperature annealing, Appl. Phys. Lett., 85(22), 5322-5324-5324, 2004
  177. New Analytical Modeling for Photoinduced Discharge Characteristics of Photoreceptors, Jpn. J. Appl. Phys., 43(8A), 5129-5133-5133, 2004
  178. Influence of Thermal Annealing on Compositional Mixing and Crystallinity of Highly-Selective Grown Si Dots with Ge Core, Appl. Surf. Sci., 224(1-4), 156-159-159, 2004
  179. Electrical Characterization of Ge Microcrystallites by Atomic Force Microscopy Using a Conducting Probe, Thin Solid Films, 457(1), 103-108-108, 2004
  180. Analysis of Soft Breakdown of 2.6-4.9nm-Thick Gate Oxides, Jpn. J. Appl. Phys., 43(10), 6925-6929-6929, 2004
  181. Statistical Analysis of Soft and Hard Breakdown in 1.9-4.8nm-thick Gate Oxides, IEEE Electron Device Lett., IEEE Electron Device Lett, 25(5), 305-307-307, 2004
  182. Influence of Boron and Fluorine Incorporation on the Network Structure of Ultrathin SiO2, Solid State Phenomena, 76-77, 149-152-152, 2001

Invited Lecture, Oral Presentation, Poster Presentation

  1. Impacts of Surface Oxidation on Surface Morphology and Silicidation Reaction in Si/Ni/Si Structures Formed on SiO2, K. Kimura; N. Taoka; A. Ohta; K. Makihara; S. Miyazaki, 16th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 17th International Conference on Plasma-Nano Technology and Science / 13th Asia-Pacific International Symposium on the Basics and Applications of Plasma Technology (ISPlasma 2024 / IC-PLANTS 2024 /APSPT-13 ), 2024/03/04, Nagoya Univ., 04P-P1-40
  2. Study of Dot Size on Electron Emission from Multiple-Stacked Si-QDs, J. Baek; K. Makihara; N. Taoka; S. Miyazaki, 16th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 17th International Conference on Plasma-Nano Technology and Science / 13th Asia-Pacific International Symposium on the Basics and Applications of Plasma Technology (ISPlasma 2024 / IC-PLANTS 2024 /APSPT-13 ), 2024/03/04, Nagoya Univ., 04P-P1-11
  3. Characterization of Chemical and Electronic States of SiO2/P-Type GaN Structures by Photoemission Measurements, H. Toyoda; A. Ohta; N. Taoka; K. Makihara; S. Miyazaki, 16th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 17th International Conference on Plasma-Nano Technology and Science / 13th Asia-Pacific International Symposium on the Basics and Applications of Plasma Technology (ISPlasma 2024 / IC-PLANTS 2024 /APSPT-13 ), 2024/03/04, Nagoya Univ., 04P-P1-04
  4. Self-Assembling Mechanism of Si-QDs on Thermally-Grown SiO2, J. Baek; Y. Imai; R. Tsuji; K. Makihara; S. Miyazaki, 14th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2023/12/15, Tohoku University, Sendai, O-08
  5. Formation of One-Dimensionally Aligned Si-QDs on SiO2 Line Patterns, R. Tsuji; Y. Imai; J. Baek; K. Makihara; S. Miyazaki, 14th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2023/12/15, Tohoku University, Sendai, P-07
  6. Effect of Ni Electrode Formation and Annealing on Crystalline Phases and Chemical Bonding Features of HfZr-oxide layer, Y. Sano; N. Taoka; A. Ohta; K. Makihara; S. Miyazaki, 14th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2023/12/15, Tohoku University, Sendai, P-05
  7. Study on Photoluminescence from β-FeSi2 NDs, H. Saito; K. Makihara; N. Taoka; S. Miyazaki, 14th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2023/12/15, Tohoku University, Sendai, P-03
  8. Impacts of Initial Si/Ni/Si Structure Formed on SiO2 on Surface Morphology and Composition Ratio of Ultra-thin Ni-Silicide Layer, K. Kimura; N. Taoka; A. Ohta; K. Makihara; S. Miyazaki, 14th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2023/12/15, Tohoku University, Sendai, P-01
  9. Formation and Local Electron Charging Properties of One-Dimensionally Self-Aligned Si-QDs, Y. Imai; K. Makihara; Y. Yamamoto; Wei-Chen Wen; M. A. Schuber; J. Baek; R. Tsuji; N. Taoka; A. Ohta; S. Miyazaki, 14th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2023/12/14, Tohoku University, Sendai, O-01
  10. Control of Crystalline Phase and Surface Morphology of Hf-Oxide Layer on Si Substate by Inserting SiO2 Interfacial Layer, Y. Sano; W. Yasuda; N. Taoka; A. Ohta; K. Makihara; S. Miyazaki, International Conference on Materials and Systems for Sustainability 2023 (ICMaSS 2023), 2023/12/02, Nagoya Univ., A3-P-13 (0107)
  11. Characterization of Chemical Bonding Features and Electronic States of Mg-doped GaN(0001) Surface after O2 Annealing, Z. Zhou; A. Ohta; N. Taoka; K. Makihara; S. Miyazaki, International Conference on Materials and Systems for Sustainability 2023 (ICMaSS 2023), 2023/12/02, Nagoya Univ., S2-Ⅰ-4 (0071)
  12. Growth Mechanisms of Self–Assembling Si–QDs on Thermally–Grown SiO2, J. Baek; Y. Imai; R. Tsuji; K. Makihara; S. Miyazaki, 36th International Microprocesses and Nanotechnology Conference (MNC 2023), 2023/11/16, Keio Plaza Hotel Sapporo, 16C-1-4
  13. Evaluation of Electronic States of β-Ga2O3 Surface by Photoemission Spectroscopy, A. Ohta; N. Taoka; K. Makihara; S. Miyazaki, 2023 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY (IWDTF 2023), 2023/10/24, Ishikawa, P-30
  14. Changes of Crystalline Phase in HfZr-oxide Due to Ni Electrode Formation, Y. Sano; N. Taoka; A. Ohta; K. Makihara; S. Miyazaki, 2023 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY (IWDTF 2023), 2023/10/24, Ishikawa, S3-4
  15. Formation and Characterization of Fe-Silicide Nanodots for Optoelectronic Application, S. Miyazaki; K. Makihara, 244th ECS Meeting, 2023/10/11, Gothenburg, G02-1542
  16. Si Diffusion Control by Inserting SiO2 Layer at Hf-Oxide/Si Interface for Transforming Hf-Oxide Crystalline Phase, Y. Sano; W. Yasuda; N. Taoka; A. Ohta; K. Makihara; S. Miyazaki, 2023 International Conference on Solid State Devices and Materials (SSDM 2023), 2023/09/08, Nagoya Congress Center, M-7-03
  17. Formation of b–FeSi2 NDs by SiH4–Exposure to Fe–NDs, H. Saito; K. Makihara; N. Taoka; S. Miyazaki, 2023 International Conference on Solid State Devices and Materials (SSDM 2023), 2023/09/08, Nagoya Congress Center, [M-7-02
  18. Formation of Ultra-thin Nickel Silicide on SiO2 Using a-Si/Ni/a-Si Structures for Oxidation Control, K. Kimura; N. Taoka; A. Ohta; K. Makihara; S. Miyazaki, 2023 International Conference on Solid State Devices and Materials (SSDM 2023), 2023/09/07, Nagoya Congress Center, PS-11-15
  19. Impact of Dot Size on Electron Emission from Multiple-Stacked Si-QDs, K. Makihara; S. Obayashi; Y. Imai; N. Taoka; S. Miyazaki, 2023 International Conference on Solid State Devices and Materials (SSDM 2023), 2023/09/07, Nagoya Congress Center, PS-11-02
  20. Formation of Ultra-thin Nickel Silicide on SiO2 Using a-Si/Ni/a-Si Structures for Oxidation Control, K. Kimura; N. Taoka; A. Ohta; K. Makihara; S. Miyazaki, 2023 International Conference on Solid State Devices and Materials (SSDM 2023), 2023/09/07, Nagoya Congress Center, PS-11-15
  21. Impact of Dot Size on Electron Emission from Multiple-Stacked Si-QDs, K. Makihara; S. Obayashi; Y. Imai; N. Taoka; S. Miyazaki, 2023 International Conference on Solid State Devices and Materials (SSDM 2023), 2023/09/07, Nagoya Congress Center, PS-11-02
  22. Formation of One-Dimensionally Self-Aligned Si-QDs and Their Local Electron Charging Properties, Y. Imai; K. Makihara; Y. Yamamoto; Wei-Chen Wen; M. A. Schuber; J. Baek; R. Tsuji; N. Taoka; A. Ohta; S. Miyazaki, 2023 International Conference on Solid State Devices and Materials (SSDM 2023), 2023/09/07, Nagoya Congress Center, [M-3-04
  23. Self-Assembling Formation of Si-QDs on SiO2 Line-Patterns, R. Tsuji; Y. Imai; J. Baek; K. Makihara; S. Miyazaki, 2023 International Conference on Solid State Devices and Materials (SSDM 2023), 2023/09/07, Nagoya Congress Center, M-3-03
  24. Evaluation of Si and Ge Segregation from Si0.2Ge0.8(111) through Al and Ag Layer, T. Sakai; A. Ohta; N. Taoka; J. Yuhara; K. Makihara; Y. Yamamoto; Wei-chen Wen; S. Miyazaki, 2023 International Conference on Solid State Devices and Materials (SSDM 2023), 2023/09/07, Nagoya Congress Center, [A-3-03
  25. Impact of O2 annealing on Chemical States of Mg doped GaN(0001) Surface, Z. Zhou; A. Ohta; X. Tian; N. Taoka; K. Makihara; S. Miyazaki, 2023 International Conference on Solid State Devices and Materials (SSDM 2023), 2023/09/06, Nagoya Congress Center, [N-1-05
  26. Electron Emission Properties of 3-Dimensional Self-Ordered SiGe Nanodots, L. Li; K. Makihara; Y. Yamamoto; H. Yagi; N. Taoka; B. Tillack; S. Miyazaki, 2023 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD 2023), 2023/07/11, Tokyo Institute of Technology, Yokohama, O-15
  27. Formation and Characterization of Impurity-Doped Ge/Si Core-Shell Quantum Dots, S. Miyazaki, International Conference on PROCESSING & MANUFACTURING OF ADVANCED MATERIALS Processing, Fabrication, Properties, Applications (Thermec'2023), 2023/07/06, Vienna, J8 July-06 15:00 (SESSION-J)
  28. Evaluations of Crystalline Structures and Ferroelectricity of Zr/Hf-Multilayer Structures Formed by Thermal Oxidization, 2023/06/26
  29. Impact of SiH4 exposure to Fe-NDs on silicidation reaction, 2023/06/26
  30. Electron Emission Properties of Multiple-Stacked SiGe-Nanodots/Si Structures, K. Makihara; Y. Yamamoto; H. Yagi; L. Li; N. Taoka; B. Tillack; S. Miyazaki, Interational Conference on Silicon Epitaxy and Heterostructures International SiGe Technology and Device Meeting (ICSI-ISTDM 2023), 2023/05/24, Como, 11:50 – 12:05 (Multilayer Systems)
  31. Formation and luminescence studies of Ge/Si core-shell quantum dots, S. Miyazaki; K. Makihara; Y. Imai, 2023 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC VS TFT 8), 2023/05/15, Grand Park Hotel Otaru (Sapporo), 09:20 – 09:45 (Session: Semiconductor Materials)
  32. Light-emission Properties of High-density Superatom-like Ge-core/Si-shell Quantum Dots, K. Makihara; Y. Yamamoto; Y. Imai; N. Taoka; M; A. Schuber; B. Tillack; S. Miyazaki, The 6th International Conference on Electronics, Communications and Control Engineering (ICECC 2023), 2023/03/25, Fukuoka Institute of Technology, Fukuoka
  33. Impact of O2 Annealing on Electronic States of p-type GaN(0001) Surface, Z. Zhou; X. Tian; A. Ohta; N. Taoka; K. Makihara; S. Miyazaki, 15th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 16th International Conference on Plasma-Nano Technology and Science (ISPlasma 2023 / IC-PLANTS 2023), 2023/03/07, Gihu Univ., 07P-P2-36
  34. Characterization of Light Emission Properties of Superatom-like Ge-core/Si-shell Quantum Dots, K. Makihara; Y. Yamamoto; Y. Imai; N. Taoka; M. A. Schuber; B. Tillack; S. Miyazaki, 15th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 16th International Conference on Plasma-Nano Technology and Science (ISPlasma 2023 / IC-PLANTS 2023), 2023/03/06, Gihu Univ., 06P-P3-46
  35. Electroluminescence from High Density Ge/Si Quantum Dots on Sub-micron Patterned Si Wires, Y. Imai; K. Makihara; N. Taoka; A. Ohta; S. Miyazaki, 15th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 16th International Conference on Plasma-Nano Technology and Science (ISPlasma 2023 / IC-PLANTS 2023), 2023/03/06, Gihu Univ., 06P-P3-45
  36. Control of Surface Flatness and Crystallinity of Al/Si(111) Structure and Formation of Ultrathin Si Layer by Segregation, 2023/02/03
  37. Effect of Thickness of Thin Nickel Silicide Films Formed on SiO2 on Surface Morphology and Crystalline Phases, 2023/02/03
  38. Formation of NiGe Thin Film on SiO2 and Its Electrical and Electronic Properties, 2023/02/03
  39. Study on Device Process for Ultrathin Ge Crystal Formed by Segregation Using Metal-Ge Eutectic Reaction, 2023/02/03
  40. Structural and Light-emission Properties of High-density Superatom-like Ge-core/Si-shell Quantum Dots, 2023/02/03
  41. Study on Electronic Charged States of Ultrahigh Density Self-aligned Si-based Quantum Dots Evaluated with AFM/Kelvin Probe Technique, 2023/02/03
  42. Electronic Charged States of High Density Self-aligned Si-based Quantum Dots as Evaluated by Using an AFM/Kelvin Probe Technique, Y. Imai; K. Makihara; N. Taoka; A. Ohta; S. Miyazaki, 13th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2023/01/24, Tohoku University, Sendai, O-04
  43. Change of Surface Morphology, Chemical Bonding Features and Crystalline Phases of Ultra-thin NixSi1-x Layers Due to Thinning, K. Kimura; N. Taoka; S. Nishimura; A. Ohta; K. Makihara; S. Miyazaki, 13th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2023/01/24, Tohoku University, Sendai, P-03
  44. Formation of Fe-silicide-NDs and Characterization of Their PL Properties, H. Saito; K. Makihara; Y. Hara; S. Fujimori; Y. Imai; N. Taoka; A. Ohta; S. Miyazaki, 13th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2023/01/24, Tohoku University, Sendai, P-06
  45. Ultrathin Si Segregated Layer Formation on Al/Si(111), T. Sakai; A. Ohta; K. Matsushita; N. Taoka; K. Makihara; S. Miyazaki, 13th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2023/01/24, Tohoku University, Sendai, P-09
  46. Formation of Fe3Si Nanodots and Characterization of Their Magnetoelectronic Transport Properties, J. Wu; H. Zhang; K. Makihara; N. Taoka; S. Miyazaki, 13th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2023/01/23, Tohoku University, Sendai, O-03
  47. Fabrication and Characterization of Ge/Si Core-Shell Quantum Dots for Light Emission Devices, K. Makihara; S. Miyazaki, Symposium on Light Emission and Photonics of Group IV Semiconductor Nanostructures (LPGN), 2022/12/14, Nagoya University, 16:45-17:20
  48. High-Density Formation of Fe-Silicide Nanodots and Their Magnetic-Field Dependent Electron Transport Properties, J. Wu; K. Makihara; N. Taoka; S. Miyazaki, The 3rd International Workshop on Advanced Nanomaterials for Future Electron Devices 2022 (IWAN2022), 2022/11/28, Frankfurt (Oder), S1-1
  49. Alignment Control of Si-based Quantum Dots, Y. Imai; K. Makihara; N. Taoka; S. Miyazaki, The 3rd International Workshop on Advanced Nanomaterials for Future Electron Devices 2022 (IWAN2022), 2022/11/28, Frankfurt (Oder), S1-2
  50. Crystalline Phase Control of Hf-oxide Layer due to Si Surface Orientations, W. Yasuda; N. Taoka; A. Ohta; K. Makihara; S. Miyazaki, The 43rd International Symposium on Dry Process (DPS2022), 2022/11/25, Osaka International Convention Center, P-31
  51. Layer Transfer of Ultrathin Ge Layer Segregated on Al/Ge(111), K. Matsushita; A. Ohta; N. Taoka; K. Makihara; S. Miyazaki, 35th International Microprocesses and Nanotechnology Conference (MNC 2022), 2022/11/10, JR Hotel Clement Tokushima, 10D-1-2
  52. Characterization of Light Emission Properties of Impurity Doped Ge/Si Core-Shell Quantum Dots, S. Miyazaki; Y. Imai; K. Makihara, 242nd ECS Meeting (Symposium G03 - SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10), 2022/10/13, Atlanta, GA, G03-1234 (オンデマンド配信、招待講演)
  53. Evaluation of Chemical Structure and Si Segregation of Al/Si(111), T. Sakai; A. Ohta; K. Matsushita; N. Taoka; K. Makihara; S. Miyazaki, 2022 International Conference on Solid State Devices and Materials (SSDM 2022), 2022/09/29, hybrid format (Makuhari Messe, Chiba), B-8-02
  54. Formation of Ultra-thin NiGe film with Mono-crystalline Phase and Smooth Surface, S. Nishimura; N. Taoka; A. Ohta; K. Makihara; S. Miyazaki, 2022 International Conference on Solid State Devices and Materials (SSDM 2022), 2022/09/28, hybrid format (Makuhari Messe, Chiba), B-6-06
  55. Characterization of Magnesium Channeled Implantation Layers in GaN(0001), A. Suyama; H. Kawanowa; H. Minagawa; J. Maekawa; S. Nagamachi; M. Aoki; A. Ohta; K. Makihara; S. Miyazaki, 2022 International Conference on Solid State Devices and Materials (SSDM 2022), 2022/09/27, hybrid format (Makuhari Messe, Chiba), J-1-02
  56. Surface Modification and Wafer Bonding of Ultrathin Ge Segregated Layer formed on Al/Ge(111), K. Matsushita; A. Ohta; N. Taoka; K. Makihara; S. Miyazaki, The 9th International Symposium on Control of Semiconductor Interfaces (ISCSI-IX), 2022/09/07, Nagoya University, WP1-3
  57. Alignment Control of Self-Assembling Si Quantum Dots, Y. Imai; R. Tsuji; K. Makihara; N. Taoka; A. Ohta; S. Miyazaki, The 9th International Symposium on Control of Semiconductor Interfaces (ISCSI-IX), 2022/09/06, Nagoya University, TuA2-4
  58. Dot Size Dependence of Electron Emission from Si-QDs Multiple-Stacked Structures, S. Obayashi; K. Makihara; N. Taoka; A. Ohta; S. Miyazaki, The 9th International Symposium on Control of Semiconductor Interfaces (ISCSI-IX), 2022/09/06, Nagoya University, TuA2-5
  59. Formation of Ultra-thin Nickel Silicide Layer on SiO2 and Control of Crystalline Phase and Surface Roughness, K. Kimura; S. Nishimura; N. Taoka; A. Ohta; K. Makihara; S. Miyazaki, The 9th International Symposium on Control of Semiconductor Interfaces (ISCSI-IX), 2022/09/05, Nagoya University, MP1-5
  60. Structural and Light-emission Properties of High–density Superatom–like Ge–core/Si–shell Quantum Dots, K. Makihara; Y. Yamamoto; Y. Imai; N. Taoka; M. A. Schuber; B. Tillack; S. Miyazaki, The 9th International Symposium on Control of Semiconductor Interfaces (ISCSI-IX), 2022/09/05, Nagoya University, MP2-14
  61. High-Density Formation and Characterization of Fe-Silicide Nanodots on SiO2, J. Wu; H. Zhang; K. Makihara; N. Taoka; A. Ohta; S. Miyazaki, 29th International Conference on Amorphous & Nanocrystaline Ssemiconductors (ICANS 29), 2022/08/24, Nanjing University, 5597
  62. Study on Photoluminescence Properties of Fe-silicide-NDs, H. Saito; K. Makihara; Y. Hara; S. Fujimori; Y. Imai; N. Taoka; A. Ohta; S. Miyazaki, The 6th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2022 (APAC-Silicide 2022), 2022/07/31, オンライン開催, Sun-p-O18
  63. Evaluation of Chemical and Electronic States of Mg-doped GaN(0001) Surfaces, X. Tian; W. Liu; A. Ohta; N. Taoka; K. Makihara; S. Miyazaki, 2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2022), 2022/07/08, オンライン開催, B6-5
  64. Two-Dimensional Ge Crystal Growth by Ge Surface Segregation of Metal/Ge Stack, A. Ohta; S. Miyazaki, 2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2022), 2022/07/07, オンライン開催, A3-1
  65. Impacts of Surface Orientation of Si Substrate on Crystalline Structures and Chemical Composition of Hf-oxide Layers Formed by Post Oxidation, 2022/06/21
  66. Formation of Al(111) Thin Layer on Si(111) and Control of Surface Si Segregation by Thermal Annealing, 2022/06/21
  67. Formation of Ultra-Thin Nickel Silicide Layer with controlled Surface Morphology and Crystalline Phase on SiO2, 2022/06/21
  68. Controls of Crystallinity and Surface Flatness of Al/Ge(111) by Substrate Heating and Ge Surface Segregation by Annealing, 2022/01/28
  69. Effects of HCl cleaning on Al2O3/GaN interface and electrical properties, 2022/01/28
  70. Roles for Si, Oxygen atoms and Oxygen Vacancy in Crystalline Phase Stabilization of HfZr-oxide Layer, N. Taoka; R. Hasegawa; A. Ohta; K. Makihara; S. Miyazaki, 2021 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY (2021 IWDTF), 2021/11/15, On-line virtual
  71. Impact of Substrate Heating on Surface Flattening and Ge Segregation of Al/Ge(111), K. Matsushita; A. Ohta; N. Taoka; S. Hayashi; K. Makihara; S. Miyazaki, 2021 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY (2021 IWDTF), 2021/11/14, On-line virtual
  72. Characterization of Electronic Charged States of High Density Self-aligned Si-based Quantum Dots Evaluated with AFM/Kelvin Probe Technique, Y. Imai; K. Makihara; A. Ohta; N. Taoka; S. Miyazaki, 34th International Microprocesses and Nanotechnology Conference (MNC 2021), 2021/10/27, Online and On-Demand Conference
  73. Study on Silicidation Reaction of Fe-NDs with SiH4, H. Furuhata; K. Makihara; A. Ohta; N. Taoka; S. Miyazaki, 34th International Microprocesses and Nanotechnology Conference (MNC 2021), 2021/10/26, Online and On-Demand Conference
  74. Impact of Boron Doping and H2 Annealing on Light Emission from Ge/Si Core-Shell Quantum Dots, S. Miyazaki; K. Makihara, 240th ECS Meeting (Symposium G02 - Semiconductor Process Integration 12), 2021/10/14, Digital Platform
  75. High Density Formation and Light Emission Characterization of Si Quantum Dots with Ge Core, K. Makihara; S. Miyazaki, The 2nd International Workshop on Advanced Nanomaterials for Future Electron Devices 2021 (IWAN2021), 2021/09/24, ALL-VIRTUAL conference
  76. Study on Silicidation Reaction of Fe-NDs with SiH4 for Light Emission Devices, H. Furuhata; K. Makihara; A. Ohta; N. Taoka; S. Miyazaki, The 2nd International Workshop on Advanced Nanomaterials for Future Electron Devices 2021 (IWAN2021), 2021/09/24, ALL-VIRTUAL conference
  77. Remote Hydrogen Plasma-Assisted Formation and Characterization of High-Density Fe-Silicide Nanodots, J. Wu; Z. He; H. Furuhata; A. Ohta; N. Taoka; K. Makihara; S. Miyazaki, The 2nd International Workshop on Advanced Nanomaterials for Future Electron Devices 2021 (IWAN2021), 2021/09/24, ALL-VIRTUAL conference
  78. High Density Formation of Fe-based Silicide Nanodots Induced by Remote H2 Plasma, Z. He; J. Wu; K. Makihara; H. Zhang; H. Furuhata; N. Taoka; A. Ohta; S. Miyazaki, 2021/09/23
  79. Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots, J. Wu; K. Makihara; H. Zhang; H. Furuhata; N. Taoka; A. Ohta; S. Miyazaki, 2021/09/23
  80. Study on Electron Emission from Phosphorus delta-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures, K. Makihara; T. Takemoto; S. Obayashi; A. Ohta; N. Taoka; S. Miyazaki, 2021 International Conference on Solid State Devices and Materials (SSDM 2021), 2021/09/07, All-VIRTUAL conference
  81. Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots, J. Wu; K. Makihara; H. Zhang; N. Taoka; A. Ohta; S. Miyazaki, 2021 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2021), 2021/08/26, VIRTUAL conference
  82. Fabrication and Characterization of Multiple Stack Si/Ge Quantum Dots for Light/Electron Emission Devices, S. Miyazaki, 13th International Conference And Expo On Nanotechnology & Nanomaterials (iNanotech 2021), 2021/07/13
  83. Formation and Thickness Control of Ultrathin Ge Layer on Al and Ag/(111) Structures by Thermal Anneal, 2021/06/22
  84. Photoemission-based Characterization of Interface Dipoles and Defect States for Gate Dielectrics, S. Miyazaki, 11th International Conference on Processing and Manufacturing of Advanced Materials (Thermec'2021), 2021/06, Virtual Conference
  85. Segregation Control for Ultrathin Ge Layer in Al/Ge(111) system, A. Ohta; M. Kobayashi; N. Taoka; M. Ikeda; K. Makihara; S. Miyazaki, 13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 14th International Conference on Plasma-Nano Technology and Science (ISPlasma 2021 / IC-PLANTS 2021), 2021/03/10
  86. Influence of Substrate Temperature on Plasma-Enhanced Self-Assembling Formation of High Density FePt-Nanodot, S. Honda; K. Makihara; H. Furuhata; A. Ohta; M. Ikeda; T. Kato; D. Oshima; S. Miyazaki, 13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 14th International Conference on Plasma-Nano Technology and Science (ISPlasma 2021 / IC-PLANTS 2021), 2021/03/09
  87. High-Density Formation of FeSi2 Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma, H. Zhixue, H; Zhang; A. Ohta; M. Ikeda; N. Taoka; K. Makihara; S. Miyazaki, 13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 14th International Conference on Plasma-Nano Technology and Science (ISPlasma 2021 / IC-PLANTS 2021), 2021/03/09
  88. Magnetoelectronic Transport Characteristics of Fe3Si Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma, W. Jialin; H. Zhang; A. Ohta; M. Ikeda; K. Makihara; S. Miyazaki, 13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 14th International Conference on Plasma-Nano Technology and Science (ISPlasma 2021 / IC-PLANTS 2021), 2021/03/09
  89. Characterization of Electron Field Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures, T. Takemoto; T. Niibayashi; K. Makihara; A. Ohta; M. Ikeda; S. Miyazaki, 13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 14th International Conference on Plasma-Nano Technology and Science (ISPlasma 2021 / IC-PLANTS 2021), 2021/03/09
  90. Solid Phase Crystallization of Amorphous Ge Thin Films on Sapphire(0001), H. Sugawa; A. Ohta; N. Taoka; M. Ikeda; K. Makihara; S. Miyazaki, 2021/01/22
  91. Growth of Ultrathin Ge Crystal Layer by Surface Segregation and Flattening of Ag/Ge Structure, A. Ohta; K. Yamada; H. Sugawa; N. Taoka; M. Ikeda; K. Makihara; S. Miyazaki, 2021/01/22
  92. Impacts of Thermal Oxidation Process of Hf/Zr Stacks on Crystalline Phases and Ferroelectric Property, R. Hasegawa; N. Taoka; A. Ohta; K. Makihara; M. Ikeda; S. Miyazaki, 2021/01/22
  93. Crystallization of Ge Thin Films on Sapphire(0001) by Thermal Annealing, Hibiki Sugawa; Akio Ohta; Masato Kobayashi; Noriyuki Taoka; Mitsuhisa Ikeda; Katsunori Makihara; Seiichi Miyazaki, PRiME 2020 (238th Meeting of The Electrochemical Society (ECS)), All-VIRTUAL conference
  94. Characterization of Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots by Using a Magnetic AFM Probe, Jialin Wu; Hai Zhang; Hiroshi Furuhata; Katsunori Makihara; Mitsuhisa Ikeda; Akio Ohta; Seiichi Miyazaki, PRiME 2020 (238th Meeting of The Electrochemical Society (ECS)), All-VIRTUAL conference
  95. Electron Field Emission from Multiply-Stacked Si Quantum Dots Structures with Graphene Top-Electrode, Tomofumi Niibayashi; Tatsuya Takemoto; Katsunori Makihara; Akio Ohta; Mitsuhisa Ikeda; Seiichi Miyazaki, PRiME 2020 (238th Meeting of The Electrochemical Society (ECS)), All-VIRTUAL conference
  96. Growth of Ultrathin Ge Crystal Layer by Surface Segregation and Flattening of Ag/Ge Structure, Akio Ohta; Kenzou Yamada; Hibiki Sugawa; Noriyuki Taoka; Mitsuhisa Ikeda; Katsunori Makihara; an Seiichi Miyazaki, 2020 International Conference on Solid State Devices and Materials (SSDM 2020), 2020/09/28, All-VIRTUAL conference
  97. 金属Zr/Hf構造の熱酸化によるZrHf酸化物の形成と結晶相制御, 2020/09/10
  98. XANAMによるGe量子ドット像の1次元 元素マッピング, 2020/09/09
  99. グラフェン上部電極を用いたSi量子ドット多重集積構造からの電界電子放出 ―コレクタ電極電圧依存性評価, 2020/09/09
  100. Photoemission Study of Chemically-Cleaned GaN Surfaces and GaN-SiO2 Interfaces Formed by Remote Plasma CVD, S. Miyazaki; A. Ohta, Material Research Meeting 2019 (MRM 2020), Yokohama
  101. Light Emission from Multiple Stack Si/Ge Quantum Dots, S. Miyazaki, 7th Global Nanotechnology Congress and Expo: Nanotechnology 2019, Kuala Lumpur
  102. Fabrication of Impurity Doped Si Quantum Dots with Ge Core for Light Emission Devices, K. Makihara; M. Ikeda; S. Miyazaki, 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8), Sendai
  103. Application of Surface Chemical Imaging by XANAM to Ge Surfaces, S. Suzuki; S. Mukai; W. J. Chun; M. Nomura; S. Fujimori; M. Ikeda; K. Makihara; S. Miyazaki; K. Asakura, 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8), Sendai
  104. Characterization of Photoluminescence from Si-QDs with B δ-Doped Ge Core, T. Maehara; S. Fujimori; M. Ikeda; A. Ohta; K. Makihara; S. Miyazaki, 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8), Sendai
  105. High Density Formation and Magnetoelectronic Transport Properties of Magnetic Fe-silicide Nanodots, H. Zhang; X. Liu; K. Makihara; M. Ikeda; A. Ohta; S. Miyazaki, 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8), Sendai
  106. Formation of High Density Fe-silicide Nanodots Induced by Remote Hydrogen Plasma and Characterization of Their Magnetic Properties, J. Wu; H. Furuhata; H. Zhang; Y. Hashimoto; M. Ikeda; A. Ohta; A. Kohno; K. Makihara; S. Miyazaki, 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8), Sendai
  107. Formation of High Density PtAl Nanodots Induced by Remote Hydrogen Plasma Exposure, S. Miyazaki, 41st International Symposium on Dry Process (DPS 2019), Hiroshima
  108. Fabrication and Characterization of Multiple Stack Si/Ge Quantum Dots for Light Emission, S. Miyazaki, 2nd Int. Conf. on Photonics Research: InterPhotonics 2019, Antalya
  109. Impact of Boron Doping into Si Quantum Dots with Ge Core on Their Photoluminescence Properties, S. Fujimori; M. Ikeda; A. Ohta; K. Makihara; S. Miyazaki, International Conference on Materials and Systems for Sustainability 2019 (ICMaSS 2019), Nagoya
  110. Determination of Complex Dielectric Function of Oxide Film from Photoemission Measurements, A. Ohata; M. Ikeda; K. Makihara; S. Miyazaki, International Conference on Materials and Systems for Sustainability 2019 (ICMaSS 2019), Nagoya
  111. Operand Study of Multiple Stacked Si Quantum Dots by Hard X-ray Photoelectron Spectroscopy, M. Ikeda; A. Ohta; K. Makihara; S. Miyazaki, International Conference on Materials and Systems for Sustainability 2019 (ICMaSS 2019), Nagoya
  112. Growth of Hetero-epitaxial Al on Ge(111) and Segregation of Ge Crystal by Annealing, M. Kobayashi; A. Ohta; M. Kurosawa; M. Araidai; M. Ikeda; N. Taoka; T. Shimizu; K. Makihara; S. Miyazaki, 32nd International Microprocesses and Nanotechnology Conference (MNC 2019), Hiroshima
  113. Impact of Boron Doping into Si Quantum Dots with Ge Core on Their Photoluminescence Properties, K. Makihara; S. Fujimori; M. Ikeda; A. Ohta; S. Miyazaki, 32nd International Microprocesses and Nanotechnology Conference (MNC 2019), Hiroshima
  114. Study on Light Emission from Multiple Stack Si/Ge Quantum Dots, S. Miyazaki, World Congress on Lasers, Optics and Photonics, Barcelona
  115. Characterization of Electron Field Emission from Si Quantum Dots with Ge Core/Si Quantum Dots Hybrid Stacked Structures, T. Takemoto; K. Makihara; A. Ohta; M. Ikeda; S. Miyazaki, 2019 International Conference of Solid State of Device and Materials (SSDM 2019), Nagoya University
  116. Characterization of Ni/GaN(0001) Interfaces by Photoemission Measurements, K. Watanabe; A. Ohta; N. Taoka; H. Yamada; M. Ikeda; K. Makihara; M. Shimizu; S.Miyazaki, 2019 International Conference of Solid State of Device and Materials (SSDM 2019), Nagoya University
  117. Growth of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface, M. Kobayashi; A. Ohta; M. Kurosawa; M. Araidai; M. Ikeda; N. Taoka; T. Shimizu; K. Makihara; S. Miyazaki, 2019 International Conference of Solid State of Device and Materials (SSDM 2019), Nagoya University
  118. Impact of Post Deposition Annealing on Chemical Bonding Features and Filled Electronic Defects of AlSiO/GaN(0001) Structure, A. Ohta; D. Kikuta; T. Narita; K. Itoh; K. Makihara; T. Kachi; S. Miyazaki, 2019 International Conference of Solid State of Device and Materials (SSDM 2019), Nagoya University
  119. Formation of high density Fe-silicide nanodots induced by remote H2 plasma and their magnetic properties, Y. Hashimoto; K. Makihara; M. Ikeda; A. Ohta; A. Kohno; S. Miyazaki, The 5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2019 (APAC-Silicide 2019), Seagaia Convention Center, Miyazaki
  120. Characterization of Electron Field Emission of Multiply-Stacked Si-QDs/SiO2 Structures, T. Takemoto; Y. Futamura; M. Ikeda; A. Ohta; K. Makihara; S. Miyazaki, 2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2019), Busan
  121. Effect of B-doping on Photoluminescence Properties of Si-QDs with Ge Core, S. Fujimori; R. Nagai; M. Ikeda; A. Ohta; K. Makihara; S. Miyazaki, 2nd Joint ISTDM / ICSI 2019 Conference; 10th International SiGe Technology and Device Meeting (ISTDM)/ 12th International Conference on Silicon Epitaxy and Heterostructures (ICSI), University of Wisconsin-Madison
  122. Fabrication and Characterization of Multiple Stack Si/Ge Quantum Dots for Light and Electron Emissions, S. Miyazaki, World Chemistry Forum 2019 (WCF-2019), Catalonia Barcelona Plaza, Barcelona
  123. Formation and Characterization of Si Quantum Dots with Ge Core for Electroluminescent Devices, K. Makihara; M. Ikeda; A. Ohta; S. Miyazaki, 2019 Compound Semiconductor Week (CSW), 2019/05/21, Nara, TuB3-3
  124. Photoemission Characterization of Interface Dipoles and Electronic Defect States for Gate Dielectrics, S. Miyazaki; A. Ohta, 2019 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT 7), Kyoto
  125. Photoemission Study of Gate Dielectrics and Stack Interfaces, S. Miyazaki; A. Ohta, 2018 International Conference of Solid State of Device and Materials (SSDM 2018), Tokyo
  126. Formation and Characterization of Si/Ge Quantum Dots for Optoelectronic Application, S. Miyazaki; K. Makihara; M. Ikeda; A. Ohta, International Conference on Processing & Manufacturing of Advanced Materials (Thermec' 2018), Paris
  127. Local Structure of High Performance TiOx Passivating Layer Revealed by Electron Energy Loss Spectroscopy, T. Mochizuki; K. Gotoh; A. Ohta; Y. Kurokawa; S. Miyazaki; T. Yamamoto; N. Usami, 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC-7) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC), WAIKOLOA, HAWAII
  128. Oxidation of GaN surface by remote oxygen plasma, T. Yamamoto; N. Taoka; A. Ohta; N. X. Truyen; H. Yamada; T. Takahashi; M. Ikeda; K. Makihara; M. Shimizu; S. Miyazaki, The 39th International Symposium on Dry Process (DPS 2017), Tokyo Tech Front (Kuramae Kaikan)
  129. Evaluation of Resistive Switching Properties of Si-rich Oxide Embedded with Ti Nanodots by Applying Constant Voltage and Constant Current, A. Ohta; Y. Kato; M. Ikeda; K. Makihara; S. Miyazaki, The 30th International Microprocesses and Nanotechnology Conference (MNC 2017), The Ramada Plaza Jeju Hotel (Jeju, Korea)
  130. Ultrathin Ge Growth on Flat Ag Surface in Hetero-Epitaxial Ag/Ge Structure by Annealing, K. Ito; A. Ohta; M. Kurosawa; M. Araidai; M. Ikeda; K. Makihara; S. Miyazaki, The 30th International Microprocesses and Nanotechnology Conference (MNC 2017), The Ramada Plaza Jeju Hotel (Jeju, Korea)
  131. Ultrathin Ge Growth on Ag Surface by Annealing of Hetero-Epitaxial Ag/Ge(111), A. Ohta; K. Ito; M. Kurosawa; M. Araidai; M. Ikeda; K. Makihara; S. Miyazaki, The 8th International Symposium on Surface Science (ISSS-8), Tsukuba International Congress Center
  132. Characterization of Interfacial Dipoles at Dielectric Stacks by XPS Analysis, S. Miyazaki; A. Ohta; N. Fujimura, The 232nd Meeting of The Electrochemical Society (ECS Meeting), National Harbor MD
  133. Processing and Characterization of High Density Si/Ge Quantum Dots for Electroluminescent Devices, S. Miyazaki; K. Yamada; K. Makihara; M. Ikeda, The 232nd Meeting of The Electrochemical Society (ECS Meeting), National Harbor MD
  134. High Thermal Stability of Abrupt SiO2/GaN Interface with Low Interface State Density, T. X. Nguyen; N. Taoka; A. Ohta; K. Makihara; H. Yamada; T. Takahashi; M. Ikeda; M. Shimizu; S. Miyazaki, SSDM2017
  135. Growth of 2D Crystal of Group-IV Elements on Epitaxial Ag (111), K. Ito; A. Ohta; M. Kurosawa; M. Araidai; M. Ikeda; K. Makihara; S. Miyazaki, SSDM2017
  136. Direct Observation of Electrical Dipole and Atomic Density at High-k Dielectrics/SiO2 Interface, N. Fujimura; A. Ohta; M. Ikeda; K. Makihara; S. Miyazaki, SSDM2017
  137. Challenges in Si-Based Nanotechnology:Fabrication and Characterization of Multistack Si/Ge Quantum Dots for Novel Functional Devices, S. Miyazaki, The 5th International Conference on Advanced Materials Science and Technology 2017 (ICAMST 2017), Makassar
  138. Study of Wet Chemical Treatments of Epitaxial GaN(0001) Surface, L. Peng; A. Ohta; N. X. Truyen; M. Ikeda; K. Makihara; N. Taoka; T.Narita; K. Itoh; D. Kikuta; K. Shiozaki; T.Kachi; S. Miyazaki
  139. Thermal Stability of SiO2/GaN Interface Formed by Remote Plasma CVD
  140. [チュートリアル] 組成・状態分析
  141. Fabrication of Multiple Stack Si/Ge Quantum Dots for Light/Electron Emission Devices, S. Miyazaki; K. Yamada; Y. Nakashima; K. Makihara; A. Ohta; M. Ikeda, The 1st International Semiconductor Conference for Global Challenges (ISCGC-2017), Nanjing
  142. Study of Light Emission from Si Quantum Dots with Ge Core, S. Miyazaki; K. Yamada; M. Ikeda; K. Makihara, Frontiers in Materials Processing Applications, Research and Technology (FiMPART'17), Bordeaux
  143. Magnetoelectronic Transport of Double Stack FePt Nanodots, K. Makihara; T. Kawase; A. Ohta; M. Ikeda; S. Miyazaki, AWAD2017(2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices), Hotel Hyundai (Gyeongju), Gyeongju-si, Korea
  144. Abrupt SiO2/GaN Interface Properties Formed by Remote Plasma Assisted CVD, N. X. Truyen; N. Taoka; A. Ohta; K. Makihara; H. Yamada; T. Takahashi; M. Ikeda; M. Shimizu; S. Miyazaki, 2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2017), Hotel Hyundai (Gyeongju), Gyeongju-si, Korea
  145. Potential Changes and Chemical Bonding Features for Si-MOS Diodes as Evaluated from HAXPES Analysis, A. Ohta; H. Murakami; M. Ikeda; K. Makihara; E. Ikenaga; S. Miyazaki, 20th Conference on Insulating Films on Semiconductors (INFOS 2017), Seminaris SeeHotel Potsdam(Potsdam, Germany)
  146. Evaluation of Energy Distribution of Filled Defects of Si Oxide Thin Films from Total Photoelectron Yield Spectroscopy, A. Ohta, 20th Conference on Insulating Films on Semiconductors (INFOS 2017), Seminaris SeeHotel Potsdam(Potsdam, Germany)
  147. Photoemission study of gate dielectrics on gallium nitride, S. Miyazaki; N. X. Truyen; A. Ohta, ULSIC vs TFT: 6th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, Schloss Hernstein Seminar Hotel, Schloss Hernstein, Hernstein
  148. Fabrication and Magnetoelectronic Transport Fe3Si-Nanodots on Ultrathin SiO2, K. Makihara; H. Zhang; A. Ohta; M. Ikeda; S. Miyazaki, ICSI-10(The 10th International Conference on Silicon Epitaxy and heterostructures), The University of Warwick(Coventry, UK)
  149. Evaluation of Potential Distribution in Multiple Stacked Si Quantum Dots Structure by Hard X-ray Photoelectron Spectroscopy, Y. Nakashima; D. Takeuchi; K. Makihara; A. Ohta; M. Ikeda; S. Miyazaki, ICSI-10(The 10th International Conference on Silicon Epitaxy and heterostructures), The University of Warwick(Coventry, UK)
  150. Characterization of Electroluminescence from Si-QDs with Ge Core, K. Yamada; K. Makihara; A. Ohta; M. Ikeda; S. Miyazaki, ICSI-10(The 10th International Conference on Silicon Epitaxy and heterostructures), The University of Warwick(Coventry, UK)
  151. High Density Formation of and Light Emission from Si Quantum Dots with Ge Core, S. Miyazaki; K. Yamada; M. Ikeda; K. Makihara, 2017MRS SPRING MEETING, PHOENIX CONVENTION CENTER
  152. Total Photoelectron Yield Spectroscopy of Electronic States of GaN Surface, A. Ohta, ISPlasma2017/IC-PLANTS2017
  153. Impact of Thermal Annealing on Mophology and Chemical Bonding Features at Epitaxial Ag(111) Surface Grown on Ge(111), K. Ito; A. Ohta; M. Kurosawa; M. Araidai; M. Ikeda; K. Makihara; S. Miyazaki, ISPlasma2017/IC-PLANTS2017, Kasugai
  154. Potential Change and Electrical Dipole at Ultrathin Oxide/Semiconductor Interfaces as Evaluated by XPS, N. Fujimura; A. Ohta; M. Ikeda; K. Makihara; S. Miyazaki, 10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSJP Core-to-Core Program Joint Seminar
  155. Characterization of Remote Plasma CVD SiO2 on GaN(0001), N. X. Truyen; A. Ohta; M. Ikeda; K. Makihara; S. Miyazaki, 10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSJP Core-to-Core Program Joint Seminar
  156. Formation of Si-based Quantum Dots on Sub-micron patterned Si Substrates, M. Ikeda; L. Gao; K. Yamada; K. Makihara; A. Ohta; S. Miyazaki, 10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSJP Core-to-Core Program Joint Seminar
  157. Total Photoelectron Yield Spectroscopy of Electronic States of Oxide Thin Films and Wide Bandgap Semiconductors, A. Ohta; T. Yamamoto; N. X. Truyen; M. Ikeda; K. Makihara; S. Miyazaki, 10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSJP Core-to-Core Program Joint Seminar
  158. Characterization of Field Electron Emission from Multiply-Stacking Si Quantum Dots, Y. Nakashima; D. Takeuchi; K. Makihara; A. Ohta; M. Ikeda; S. Miyazaki, 10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSJP Core-to-Core Program Joint Seminar
  159. Chemical Analysis of Epitaxial Ag(111) Surface formed on Group-IV Semiconductors, K. Ito; A. Ohta; M. Kurosawa; M. Araidai; M. Ikeda; K. Makihara; S. Miyazaki, 10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSJP Core-to-Core Program Joint Seminar
  160. Luminescence Studies of High Density Si Quantum Dots with Ge core, K. Yamada; M. Ikeda; K. Makihara; S. Miyazaki, 10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSJP Core-to-Core Program Joint Seminar
  161. Evaluation of Dielectric Function of Oxide Thin Films from Photoemission Measurements, T. Yamamoto; A. Ohta; M.Ikeda; K. Makihara; S. Miyazaki, 10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSJP Core-to-Core Program Joint Seminar
  162. Evaluation of Inner Potential Change and Electrical Dipole in Ultrathin Oxide Stacked Structure Using XPS Measurements
  163. Photoemission Study of Chemical Bonding Features and Electronic Defect States of Remote Plasma CVD SiO2/GaN Structure
  164. Characterization of Magnetoelectronic Transport through Double Stack FePt Nanodots on Ultrathin SiO2/c-Si by Conductive-probe AFM, S. Miyazaki, ICSPM24
  165. Processing and Characterization of Si/Ge Quantum Dots, S. Miyazaki; K. Makihara; A. Ohta; M. Ikeda, 2016 IEDM(IEEE International Electron Devices Meeting), Hilton San Francisco Union Square(San Francisco, CA)
  166. Magnetoelectronic Transport and Resistive Switching in Double Stack FePt Nanodots on Ultrathin SiO2/c-Si, S. Miyazaki, JSPS Core-to-Core Program Workshop, Julich
  167. Low Temperature Formation of Crystalline Si:H/Ge:H Heterostructures by Plasma Enhanced CVD in Combination with Ni-NDs Seeding Nucleation, K. Makihara; D. Takeuchi; M. Ikeda; A. Ohta; S.Miyazaki, 29th International Microprocesses and Nanotechnology Conference (MNC 2016), ANA Crowne Plaza, Kyoto, Japan
  168. High Density Formation of Ta/TaOxide Core-Shell Nanodots, Y. Wang; D. Takeuchi; A. Ohta; M. Ikeda; K. Makihara; S. Miyazaki, 29th International Microprocesses and Nanotechnology Conference (MNC 2016), ANA Crowne Plaza, Kyoto, Japan
  169. Magnetotransport Properties of FePt Alloy-NDs Stacked Structures, K. Makihara; T. Kawase; A. Ohta; M. Ikeda; S. Miyazaki, SSDM 2016, Tsukuba
  170. Formation and Characterization of Si Quantum Dots with Ge Core for Functional Devices, S. Miyazaki; D. Takeuchi; M. Ikeda; K. Makihara, SSDM 2016, Tsukuba
  171. Evaluation of Potential Change and Electrical Dipole in HfO2/ SiO2/Si Structure, N. Fujimura; A. Ohta; K. Makihara; S. Miyazaki, SSDM 2016, Tsukuba
  172. Formation of Fe3Si-Nanodots on Ultrathin SiO2 Induced by H2-plasma Treatment and Their Magnetic-Field Dependent Electron Transport Properties, H. Zhang; K. Makihara; M. Ikeda; A. Ohta; S. Miyazaki, APAC Silicide 2016
  173. Formation and electron transport properties of Fe3Si nanodots on ultrathin SiO2, H. Zhang; M. Ikeda; K. Makihara; A. Ohta; S. Miyazaki, AWAD2016(2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices)
  174. Embedding of Ti nanodots into SiOx and its impact on resistance switching behaviors, Y. Kato; A. Ohta; M. Ikeda; K. Makihara; S. Miyazaki, AWAD2016(2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices)
  175. High Density Formation of and Light Emission from Silicon Quantum Dots with Ge Core, S. Miyazaki, 11th Workshop on Si-based Optoelectronic Materials and Devices
  176. Impact of Phosphorus Doping to Multiply-Stacking Si Quantum Dots on Electron Emission Properties, D. Takeuchi; K. Makihara; A. Ohta; M. Ikeda; S. Miyazaki, ISCSI-VII/ISTDM 2016
  177. Determination of Energy Band Profile of Thermally-grown SiO2/4H-SiC Structure Using XPS, H. Watanabe; A. Ohta; K. Makihara; S. Miyazaki, ISCSI-VII/ISTDM 2016
  178. Electron Transport Properties of High Density FePt-NDs Stacked Structures, T. Kawase; Y. Mitsuyuki; K. Makihara; A. Ohta; M. Ikeda; S. Miyazaki, ISCSI-VII/ISTDM 2016
  179. Characterization of light emission from Si quantum dots with Ge core, S. Miyazaki, Intern. Conf. on Processing and Manufacturing of Advanced Materials 2016 (THERMEC'2016), Granz
  180. Evaluation of Resistive Switching Properties of Si-rich Oxide Embedded with Ti Based Thin Films and Ti Nano-dots, Y. Kato; A. Ohta; K. Makihara; S. Miyazaki
  181. Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots by Using a Magnetic AFM Probe, H. Zhang; Y. Mitsuyuki; K. Makihara; M. Ikeda; A. Ohta; S. Miyazaki
  182. Evaluation of Electronic States of Thermally-grown SiO2/4H-SiC (II), H. Watanabe; A. Ohta; N. Fujimura; K. Makihara; S. Miyazaki
  183. Effect of Ge Core Size on Photoluminescence from Si Quantum Dots with Ge Core, K. Yamada; K. Kondo; M. Ikeda; K. Makihara; S. Miyazaki
  184. Photoluminescence Mechanism of Si Quantum Dots with Ge Core, K. Kondo; M. Ikeda; K. Makihara; S. Miyazaki
  185. Magnetotransport Properties of FePt Alloy-NDs Stacked Structures, Y. Mitsuyuki; T. Kawase; A. Ohta; M. Ikeda; K. Makihara; S. Miyazaki
  186. Characterization of Chemical Bonding Features of Ultrathin Ge Layer Grown by Ag-Induced Layer-Exchange Method, A. Ohta; M. Kurosawa; M. Araidai; S. Miyazaki, ISPlasma2016 & IC-PLANTS2016
  187. Self-assembling Formation of Ta Nanodots Induced by Remote Hydrogen Plasma from Ge/Ta Bi-layer Stack, Y. Wang; D. Takeuchi; A. Ohta; K. Makihara; M. Ikeda; S. Miyazaki, ISPlasma2016 & IC-PLANTS2016
  188. Impact of Magnetic-Field Application on Electron Charging Characteristics of FePt Nanodots, T. Kawase; Y. Mitsuyuki; A. Ohta; K. Makihara; T. Katou; S. Iwata; S. Miyazaki, ISPlasma2016 & IC-PLANTS2016
  189. Formation of High Density Ta Oxide Nanodots, Y. Wang; D. Takeuchi; A. Ohta; K. Makihara; S. Miyazaki, ISPlasma2016 & IC-PLANTS2016
  190. Effect of Ge Stacked Layer on Ti Nanodots Formation From Metal Thin Films by Remote Hydrogen Plasma Exposure, Y. Kato; A. Ohta; K. Makihara; S. Miyazaki, ISPlasma2016 & IC-PLANTS2016
  191. Cleaning of 4H-SiC(0001) Surface by using Remote Hydrogen Plasma, T. xuan Nguyen; D. Takeuchi; A. Ohta; K. Makihara; S. Miyazaki, ISPlasma2016 & IC-PLANTS2016
  192. High Density Formation and Light Emission Properties of Silicon Quantum Dots with Ge Core, S. Miyazaki, BIT's 2nd Annual World Congress of Smart Materials-2016
  193. 4H-SiC(0001) Surface Modification by Remote Hydrogen Plasma Exposur
  194. Evaluation of Valence Band Top and Electron Affinity of Si, 4H-SiC, and SiO2 Using X-ray Photoelectron Spectroscopy
  195. Effect of Embedding Ti Nanodots into SiOx Film on Its Resistive Switching Properties
  196. Evaluation of Energy Band Diagram and Depth Profile of Electronic Defect State Density for SiO2/4H-SiC Structures
  197. Fabrication and Magnetoelectronic Transport of Double Stack FePt Nanodots on Ultrathin SiO2, S. Miyazaki; Y. Kabeya; Y. Mitsuyuki; K. Makihara, 2015 MRS Fall Meeting & Exhibit
  198. Impact of Embedded MnNanodots on Resistive Switching Properties of Si-rich Oxides, T. Arai; A. Ohta; K. Makihara; S. Miyazaki, 28th International Microprocesses and Nanotechnology Conference(MNC2015)
  199. Evaluation of Valence Band Maximum and Electron Affinity of SiO2 and Si-based Semiconductors Using XPS, N. Fujimura; A. Ohta; K. Makihara; S. Miyazaki, The 2015 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (2015 IWDTF)
  200. Photoemission Study of Thermally-Grown SiO2/4H-SiC Structure., H. Watanabe; A. Ohta; N. Fujimura; K. Makihara; S. Miyazaki, The 2015 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (2015 IWDTF)
  201. Formation of High Density Ti Nanodots and Evaluation of Resistive Switching Properties of SiOx-ReRAMs with Ti Nanodots, Y. Kato; A. Ohta; T. Arai; K. Makihara; S. Miyazaki, The 2015 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (2015 IWDTF)
  202. High Density Formation of Ta Nanodots Induced by Remote Hydrogen Plasma, Y. Wang; D. Takeuchi; K. Makihara; A. Ohta; S. Miyazaki, 68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing
  203. High-Resolution Photoemission Study of High-k Dielectric Bilayer Stack on Ge(100), S. Miyazaki, The 228th ECS Meeting
  204. Resistive Switching Characteristics of Si-Rich Oxides with Embedding Ti Nanodots, Y. Kato; T. Arai; A. Ohta; K. Makihara; S. Miyazaki, The 228th ECS Meeting
  205. Photoemission Study on Chemical Bonding Features and Electronic Defect States of Thermally-Grown SiO2/4H-SiC Structure, H. Watanabe; A. Ohta; K. Makihara; S. Miyazaki, The 228th ECS Meeting
  206. Electronic Defect States in Thermally-grown SiO2/4H-SiC Structure Measured by Total Photoelectron Yield Spectroscopy, A. Ohta; K. Makihara; S. Miyazaki, The 19th Conference on "Insulating Films on Semiconductors"(INFOS 2015)
  207. Electron Transport Properties of High Density FePt-NDs Stacked Structures, Y. Mitsuyuki; K. Makihara; A. Oota; S. Miyazaki, 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015)
  208. Effect of P-doping on Photoluminescence Properties of Si Quantum Dots with Ge Core, K. Kondo, 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015)
  209. High Density Formation and Characterization of CoPt and FePt Nanodots on SiO2, S. Miyazaki, International Conference on Frontiers in Materials Processing Applications Research & Technology (FiMPART'15)
  210. Study on Electroluminescence from Multiply-Stacking Valency Controlled Si Quantum Dots, T. Yamada; K. Makihara; A. Ohta; M. Ikeda; S. Miyazaki, The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)
  211. Impact of Phosphorus Doping to Multiply-Stacking Si Quantum Dots on Electron Field Emission Properties, D. Takeuchi; K. Makihara; A. Ohta; M. Ikeda; S. Miyazaki, The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)
  212. Study on Light Emission from Si Quantum Dots with Ge Core, S. Miyazaki; K. Kondo; K. Makihara, The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)
  213. Characterization of Electron Field Emission from High Density Self-Aligned Si-Based Quantum Dots, D. Takeuchi; K. Makihara; A. Ohta; M. Ikeda; S. Miyazaki, ISPlasma2015/IC-PLANTS2015
  214. Formation and Characterization of High Density FeSi Nanodots on SiO2 Induced by Remote H2 Plasma, K. Makihara; H. Zhang; A. Ohta; S. Miyazaki, ISPlasma2015/IC-PLANTS2015
  215. Impact of Embedded Mn Nanodots on Resistive Switching Characteristics of Si-rich Oxides as Measured in Ni-Electrodes MIM Diodes
  216. Formation and Characterization of High Density FePt Nanodots on SiO2 Induced by Remote Hydrogen Plasma, S. Miyazaki; Y. Kabeya; R. Fukuoka; H. Zhang; K. Makihara; T. Kato; S. Iwata, 2014 MRS Fall Meeting&Exhibit
  217. Luminescence Studies of High Density Si-based Quantum Dots, K. Makihara, JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration (imec)
  218. Study of Electron Field Emission from High Density Self-aligned Si-based Quantum Dots, D. Takeuchi, JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration (imec)
  219. Photoemission Study of High-k Dielectrics Stack on Ge(100) - Determination of Energy Bandgaps and Band Alignments, S. Miyazaki, JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration (imec)
  220. High Density formation of Fe-Silicide Nanodots on SiO2 Induced by Remote H2 Plasma, H. Zhang; K. Makihara; A. Ohta; M. Ikeda; S. Miyazaki, MNC 2014
  221. Characterization of Electron Emission from High Density Self-aligned Si-based Quantum Dots by Conducting-Probe Atomic Force Microscopy, D. Takeuchi; K. Makihara; A. Ohta; M. Ikeda; S. Miyazaki, The 2014 ECS and SMEQ (Sociedad Mexicana de Electroquímica) Joint International Meeting
  222. Pre-Amorphization and Low-Temperature Implantation for Efficient Activation of Implanted As in Ge(100), H. Murakami; S. Hamada; T. Ono; K. Hashimoto; A. Ohta; H. Hanafusa; S. Higashi; S. Miyazaki, The 2014 ECS and SMEQ (Sociedad Mexicana de Electroquímica) Joint International Meeting
  223. Photoluminescence Study of Si Quantum Dots with Ge Core, K. Makihara; K. Kondo; M. Ikeda; A. Ohta; S. Miyazaki, The 2014 ECS and SMEQ (Sociedad Mexicana de Electroquímica) Joint International Meeting
  224. Characterization of Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stack, A. Ohta; H. Murakami; K. Hashimoto; K. Makihara; S. Miyazaki, The 2014 ECS and SMEQ (Sociedad Mexicana de Electroquímica) Joint International Meeting
  225. Materials and Interfaces Characterization for Advanced Ge-Channel Devices: Soft and Hard X-ray Photoemission Measurements, S. Miyazaki, The 1st Material Research Society of Indonesia (MRS-Id) Meeting 2014
  226. Electroluminescence from Multiply-Stack of Doped Si Quantum Dots, T. Yamada; K. Makihara; M. Ikeda; S. Miyazaki, international conference on SOLID STATE DEVICES AND MATERIALS (SSDM2014)
  227. Characterization of Resistance-Switching of Ni Nano-dot/SiOx/Ni Diodes, A. Ohta, The 15th IUMRS-ICA (International Union of Materials Research Societies, International Conference in Asia)
  228. Impact of Remote H2 Plasma on Surface Roughness of 4H-SiC(0001), T. Nguyen, The 15th IUMRS-ICA (International Union of Materials Research Societies, International Conference in Asia)
  229. High Density Formation of Mn and Mn-germanide Nanodots, Y. WEN, The 15th IUMRS-ICA (International Union of Materials Research Societies, International Conference in Asia)
  230. Local Electrical Properties of Si-rich Oxides with Embedding Mn-nanodots by Atomic Force Microscopy Using Conducting-Probe, T. Arai, The 15th IUMRS-ICA (International Union of Materials Research Societies, International Conference in Asia)
  231. Impact of Magnetic-Field Application on Electron Transport Through CoPt Alloy Nanodots, Y. Kabeya, The 15th IUMRS-ICA (International Union of Materials Research Societies, International Conference in Asia)
  232. Resistance-Switching Characteristics of Si-rich Oxide as Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements, A. Ohta; C. Liu; T. Arai; D. Takeuchi; H. Zhang; K. Makihara; S. Miyazaki, 2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2014)
  233. Characterization of electronic charged states of self-aligned coupled Si quantum dots by AFM/KFM Probe Technique, K. Makihara; N. Tsunekawa; M. Ikeda; S. Miyazaki, 7th International Silicon-Germanium Technology and Device Meeting (2014 ISTDM)
  234. Impact of embedded Mn-nanodots on resistive switching in Si-rich oxides, T. Arai; C. Liu; A. Ohta; K. Makihara; S. Miyazaki, 7th International Silicon-Germanium Technology and Device Meeting (2014 ISTDM)
  235. XPS Study of Energy Band Alignment of High-k Dielectric Gate Stack on Ge(100), S. Miyazaki; A. Ohta, 2014 MRS Spring Meetings & Exhibit
  236. Selective Crystallization and Metallizatioin of a-Ge:H Thin Films by Pt-coating and Exposing to Remote H2 Plasma, K. Makihara; M. Ikeda; S. Higashi; S. Miyazaki, 6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2014)
  237. Study on Formation of High Density Fe-Nanodots on Ultrathin SiO2 Induced by Remote H2 Plasma Exposure, H. Zhang; K. Makihara; R. Fukuoka; Y. Kabeya; S. Miyazaki, ISPlasma2014/IC-PLANTS2014
  238. Study on Si/Ge Heterodtructures Formed by PECVD in Combination with Ni-Nds Seeding Nucleation, Y. Lu; K. Makihara; D. Takeuchi; K. Sakaike; M. Akazawa; S. Higashi; S. Miyazaki, ISPlasma2014/IC-PLANTS2014
  239. Alignment Control and Electrical Coupling of Si-based Quantum Dots, K. Makihara; S. Miyazaki, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  240. Formation of High-Density Magnetic Nanodots on Ultrathin SiO2 Induced by Remote H2 Plasma, Y. Kabeya; H. Zhang; R. Fukuoka; K. Makihara; S. Miyazaki, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  241. Electroluminescence from Multiply-Stacking B-doped Si Quantum Dots, T. Yamada; K. Makihara; Y. Suzuki; M. Ikeda; S. Miyazaki, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  242. Evaluation of Chemical Bonding Features and Resistive Switching in TiOx/SiOx Stack in Ti Electrode MIM Diodes, T. Arai; C. Liu; A. Ohta; K. Makihara; S. Miyazaki, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  243. Impact of Pulsed Bias Application on Electroluminescence Properties from One-dimensionally Self-Aligned Si-based Quantum Dots, Y. Suzuki; K. Makihara; M. Ikeda; S. Miyazaki, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  244. Characterization of Local Electronic Transport through Si-Nanocrystals/ Si-Nanocolumnar Structures by Non-contact Conductive Atomic ForceMicroscopy, D. Takeuchi; K. Makihara; M. Ikeda; S. Miyazaki, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  245. High Density Formation of FePt Alloy Nanodots Induced by Remote Hydrogen Plasma and Characterization of Their Magnetic Properties, R. Fukuoka; H. Zhang; K. Makihara; Y. Tokuoka; T. Kato; S. Iwata; S. Miyazaki, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  246. Fabrication of Low-Resistance Shallow Juntion by Low Temperature As+-Ion Implantation to Ge(100)
  247. Impact of Post-Metallization Annealing on Chemical Structures in Ge-MIS Capacitors with HfO2/TaGexOy Dielectrics
  248. Progress in Determination Method of Ultrathin Oxide Bandgaps from Analysis of Energy Loss Signals for Photoelectrons
  249. Optoelectronic Response of Metal-Semiconductor Hybrid Nanodots Floating Gate, S. Miyazaki, 2013 Energy Materials Nanotechnology Fall Meeting (2013 EMN Fall Meeting)
  250. Formation and characterization of hybrid nanodots embedded in gate dielectric for optoelectronic application, S. Miyazaki, International Conference on Processing and Manufacturing of Advanced Materials 2013 (THERMEC'2013)
  251. High density formation of FePt alloy nanodots on SiO2 induced by remote hydrogen plasma, R. Fukuoka; H. Zhang; K. Makihara; Y. Tokuoka; T. Kato; S. Iwata; S. Miyazaki, MORIS2013
  252. Study on As+ Ion Implantation into Ge at Different Substrate Temperatures, T. Ono; K. Hashimoto; A. Ohta; H. Murakami; H. Hanafusa; S. Higashi; S. Miyazaki, 2013 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF 2013)
  253. Impact of Post-Metallization Annealing on Chemical Bonding Features in Ge-MIS Structure with HfO2/TaGexOy Stack, K. Hashimoto; T. Ono; A. Ohta; H Murakami; S. Higashi; S. Miyazaki, 2013 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF 2013)
  254. Formation of One-dimensionally Self-Aligned Si-based Quantum Dots and Its Application to Light Emitting Diodes, K. Makihara; S. Miyazaki, 26th International Microprocesses and Nanotechnology Conference
  255. Characterization of Electron Emission from Si-Nanocrystals/Si-Nanocolumnar Structures by Non-contact Conductive Atomic Force Microscopy, D. Takeuchi; K. Makihara; M. Ikeda; S. Miyazaki; H. Kaki; T. Hayashi, ACSIN-12&ICSPM21
  256. Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-Electrode MIM Diodes, A. Ohta, 224th ECS Meeting
  257. Study On Charge Storage and Optical Response of Hybrid Nanodots Floating Gate Mos Devices for Their Optoelectronic Application, S. Miyazaki, The 224th Electrochemical Society (ECS) Meeting
  258. Study on Electronic Emission through Si-Nanocrystals/ Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy, D. Takeuchi, JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"
  259. Characterization of Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic Application, S. Miyazaki, JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"
  260. Characterization of Electron Transport Through Ultra High Density Array of One- dimensionally Aligned Si-based Quantum Dots, H. Niimi; K. Makihara; M. Ikeda; S. Miyazaki, 2013 International Conference on Solid State Devices and Materials
  261. Transient Characteristics of Electroluminescence from Self-aligned Si-based Quantum Dots, Y. Suzuki; K. Makihara; M. Ikeda; S. Miyazaki, 2013 International Conference on Solid State Devices and Materials
  262. Formation of High Density Fe-Nanodots on Ultrathin SiO2 Induced by Remote H2 Plasma, H. Zhang; R. Fukuoka; Y. Kabeya; K. Makihara; S. Miyazaki, 2013 International Symposium on Dry Process (DPS 2013)
  263. Low Temperature Formation of Crystalline Si/Ge Heterostructures by Plasma Enhanced CVD in Combination with Ni-NDs Seeding Nucleation, Y. Lu; K. Makihara; D. Takeuchi; K. Sakaike; M. Akazawa; M. Ikeda; S. Higashi; S. Miyazaki, The 25th International Conference on Amorphous and Nano-crystalline Semiconductors (ICANS 25)
  264. Characterization of Ultrathin Ta-oixde Films as an Interfacial Control Layer Formed on Ge(100) by ALD and Layer-by-layer Methods, H. Murakami; K. Hashimoto; A. Ohta; K. Mishima; S. Higashi; S. Miyazaki, 2013 NIMS Conference -Structure Control of Atomic/ Molecular Thin Films and Their Applications-
  265. High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy, D. Takeuchi; Makihara,M,Ikeda; M. Ikeda; S. Miyazaki; H. Kaki; T. Hayashi, 2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2013)
  266. Selective Growth of Self-Assembling Si and SiGe Quantum Dots, K. Makihara; M. Ikeda; S. Miyazaki, 2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2013)
  267. HAXPES Studies of Chemical Bonding Features of Buried Interfaces for Advanced Ge-channel MIS Devices, S. Miyazaki, 5th International conference on hard X-ray photoelectron spectroscopy(HAXPES 2013)
  268. High Density Formation of CoPt Alloy Nanodots Induced by Remote Hydrogen Plasma and Charging and Magnetizing Characteristics, Science and Technology for Dielectric Thin Films for Electron Devices
  269. High Density Formation of CoPt Alloy Nanodots Induced by Remote H2 Plasma, R. Fukuoka; H. Zhang; Y. Kabeya; K. Makihara; A. Ohta; M. Ikeda; S. Miyazaki, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and
  270. Determination of Bandgap Energy of Thermally-Grown Si- and Ge- Oxides from Energy Loss Spectra of Photoelectrons, A. Ohta; H. Murakami; S. Higashi; S. Miyazaki, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and
  271. Characterization of Electroluminescence from Multiply-Stacked B-doped Si Quantum Dots, T. Yamada; K. Makihara; H. Takami; Y. Suzuki; M. Ikeda; S. Miyazaki, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and
  272. Characterization of Electroluminescence from Self-Aligned Si-Based Quantum Dots Stack by Intermittent Bias Application, K. Makihara; H. Takami; Y. Suzuki; M. Ikeda; S. Miyazaki, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and
  273. Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Devices, S. Miyazaki; K. Makihara; M. Ikeda, JSPS Core-to Core Program Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  274. High Density Formation of Iron Nanodots on SiO2 Induced by Remote Hydrogen Plasma, H. Zhang; R. Fukuoka; Y. Kabeya; K. Makihara; S. Miyazaki, 3rd International Conference on Advanced Engineering Materials and Technology(2013)
  275. High-density Formation and Characterization of Nanodots for Their Electron Device Application, K. Makihara; S. Miyazaki, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  276. Electronic and Optoelectronic Response of Hybrid Nanodots Floating Gate MOS Devices, S. Miyazaki; K. Makihara; M. Ikeda; H. Murakami, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  277. Electroluminescence Study of Self-aligned Si-based Quantum Dots, H. Takami; K. Makihara; M. Ikeda; S. Miyazaki, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  278. Transient Characteristics of Electroluminescence from Self-aligned Si-based Quantum Dots, Y. Suzuki; K. Makihara; H. Takami; M. Ikeda; S. Miyazaki, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  279. Spatially-controlled Charge Storage and Charge Dispersion in High Density Self-aligned Si-based Quantum Dots, N. Tsunekawa; K. Makihara; M. Ikeda; S. Miyazaki, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  280. High Density Formation and Characterization of CoPt Alloy Nanodots as Memory Nodes, R. Fukuoka; H. Zhang; Y. Kabeya; K. Makihara; A. Ohta; S. Miyazaki, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  281. Characterization of Resistive Switching of Si-rich Oxides, M. Fukusima; A. Ohta; K. Makihara; S. Miyazaki, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  282. Characterization of Electron Emission from Si-Nanocrystals/Si-Nanocolumnar Structures by Conductive-Probe Atomic Force Microscopy, D. Takeuchi; K. Makihara; M. Ikeda; S. Miyazaki; H. Kaki; T. Hayashi, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  283. Study on Electronic Emission through Ultrathin Au/High-Dense Si-Nanocolumnar Structures Accompanied with Si-Nanocrystals by Conductive Atomic Force Microscopy, D. Takeuchi; K. Makihara; M. Ikeda; S. Miyazaki; H. Kaki; T. Hayashi, The 6th International Conference on Plasma-Nano Technology & Science
  284. Evaluation of Resistance-Switching Behaviors and Chemical Bonding Features of Si-rich Oxide ReRAMs with TiN Electrode, M. Fukusima; A. Ohta; K. Makihara; S. Miyazaki, The 6th International Conference on Plasma-Nano Technology & Science
  285. Characterization of Resistive Switching of Ultrathin Si-rich Oxide Contacted with TiN Electrodes
  286. Photoemission Study of Rt/SiOx/Pt Structures
  287. Characterization of Chemical Bonding Features of As+-Implanted Ge by X-ray Photoemission Spectroscopy
  288. Study of Chemical Bonding Features of Impurities Implanted into SiC and Their High-Efficient Activation, 2013/01/26
  289. Highly-crystallized Ge:H Film Growth from GeH4 Very High Frequency Inductively-coupled Plasma -Crystalline Nucleation Initiated by Ni-nanodots-, K. Makihara; J. Gao; D. Takeuchi; K. Sakaike; S. Hayashi; M. Ikeda; S. Higashi; S. Miyazaki, 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
  290. Characterization of Electronic Emission Through Au/Si-Nanocolumnar Structures by Conductive-Probe Atomic Force Microscopy, D. Takeuchi; K. Makihara; M. Ikeda; S. Miyazaki; H. Kaki; T. Hayashi, 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
  291. Charging and Magnetizing Characteristics of Co Nanodots Formed by Remote H2-Plasma Induced Migration, R. Fukuoka; K. Makihara; M. Ikeda; S. Miyazaki, 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
  292. Resistive Switching of Si-rich Oxide Dielectric with Ti based Electrodes, A. Ohta; M. Fukusima; K. Makihara; S. Higashi; S. Miyazaki, 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
  293. Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Application, S. Miyazaki, 2012 MRS Fall Meeting & Exhibit
  294. Characterization of Resistance-Switching Properties of SiOx Films Using Pt Nanodots Electrodes, K. Makihara; M. Fukushima; A. Ohta; M. Ikeda; S. Miyazaki, 222nd Electrochemical Society (ECS) Meeting : SiGe & Ge Materials, Processing and Device Symposium
  295. Control of Schottky Barrier Height at Al/p-Ge Junctions by Ultrathin Layer Insertion, A. Ohta; M. Matsui; H. Murakami; S. Higashi; S. Miyazaki, 222nd Electrochemical Society (ECS) Meeting : SiGe & Ge Materials, Processing and Device Symposium
  296. Impact of Ni-nanodots on Crystalline Ge:H Film Growth from GeH4 Very High Frequency Inductively-Coupled Plasma, J. Gao; K. Makihara; M. Ikeda; S. Hayashi; K. Sakaike; S. Higashi; S. Miyazaki, 11th Asia-Pacific Conference on Plasma Science and Technology and 25th Symposium on Plasma Science for Materials (APCPST & SPSM)
  297. Photoemission Study of GeO2/Ge Structure Formed by Thermal Oxidation, H. Murakami; Y.Ono,A.Ohta; S.Higashi; S.Miyazaki, International Union Materials Research Societies - International Conference on Electronic Materials 2012 (IUMRS-ICEM 2012)
  298. XPS Study of Energy Band Alignment between Hf-La Oxides and Si(100), A. Ohta; H. Murakami; S. Higashi; S. Miyazaki, International Union Materials Research Societies - International Conference on Electronic Materials 2012 (IUMRS-ICEM 2012)
  299. Temporal Changes of Charge Distribution in High Density Self-Aligned Si-Based Quantum Dots as Evaluated by AFM/KFM, N. Tsunekawa; K. Makihara; M. Ikeda; S. Miyazaki, International Union Materials Research Societies - International Conference on Electronic Materials 2012 (IUMRS-ICEM 2012)
  300. Dry Oxidation of Germanium (100) and (111) Surfaces - Impact of Oxidation Temperature on Ge Oxide Growth, A. Ohta; S. K. Sahari; M. Ikeda; H. Murakami; S. Higashi; S. Miyazaki, 2012 International Conference on Solid State Devices and Materials (SSDM)
  301. Characterization of Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots, H. Takami; K. Makihara; M. Ikeda; S. Miyazaki, 2012 International Conference on Solid State Devices and Materials (SSDM)
  302. Characterization of As Implanted and Annealed Ge by Photoemission and Electrical Measurements, T. Ono; A. Ohta; H. Murakami; S. Higashi; S. Miyazaki, 2012 International Conference on Solid State Devices and Materials (SSDM)
  303. Charge Storage and Optoelectronic Response of Silicide-Nanodots/Si-Quantum-Dots Hybrid-Floating-Gate MOS Devices, Seiichi Miyazaki; Katsunori Makihara; Mitsuhisa Ikeda, University of Vigo and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
  304. Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer, K.Hashimoto; A.Ohta; H.Murakami; S.Higashi; S.Miyazaki, 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012)
  305. Photoexcited Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures, M.Ikeda; K.Makihara; S.Miyazaki, 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012)
  306. Characterization of Local Electronic Transport through Ultrathin Au/Highly-dense Si Nanocolumar structures by Conducting-Probe Atomic Force Microscopy, D.Takeuchi; A.Ohta; K.Makihara; M.Ikeda; S.Miyazaki; H.Kaki; T. Hayashi, 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012)
  307. Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior, A. Ohta; K. Makihara; M. Ikeda; H. Murakami; S. Higashi; S. Miyazaki, 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012)
  308. Characterization of Resistive Switching of Pt/Si-rich Oxide/TiN System, M. Fukusima; A. Ohta; K. Makihara; S. Miyazaki, 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012)
  309. Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Application, S. Miyazaki, CNSE and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing/Nanotechnology for Ultralarge Scale Integration", 2012/06/08
  310. Study of Electron Transport Characteristics Through Self-Aligned Si-Based Quantum Dots, K.Makihara; C. Liu; M. Ikeda; S. Miyazaki, the 6th International SiGe Technology and Device Meeting (ISTDM 2012)
  311. Highly-crystallized Ge:H Film Growth from GeH4 VHF-ICP -Crystalline Nucleation Initiated by Ni-nanodots-, K. Makihara; J. Gao; K. Sakaike; S. Hayashi; H. Deki; M. Ikeda; S. Higashi; S.Miyazaki, the 6th International SiGe Technology and Device Meeting (ISTDM 2012)
  312. Formation of PtAl-Alloy Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma, K. Makihara; M. Ikeda; A. Ohta; S. Miyazaki, The 5th International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2012)
  313. Evaluation of Charge Trapping Properties of Microcrystalline Germanium Thin Films by Kelvin Force Microscopy, K. Makihara; H. Deki; M. Ikeda; S. Miyazaki, The 5th International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2012)
  314. Formation of High Density Ge Quantum Dots and Their Electrical Properties, M. Ikeda; K. Makihara; A. Ohta; S. Miyazaki, The 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS 2012)
  315. Evaluation of Chemical Structure and Resistance Switching Behaviors of Pt/RF-Sputtered Si Oxide/Pt Diodes, A. Ohta; H. Murakami; S. Higahshi; S. Miyazaki, The 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS 2012)
  316. X-ray Photoemission Study of SiO2/Si/SiGe Heterostructures on Si(100), A. Ohta; K. Makihara; S. Miyazaki; M. Sakuraba; J. Murota, The 5th International Conference on PLAsma-Nano Technology & Science (IC-PLANTS 2012)
  317. Formation of One-Dimensionally Self-Aligned Si-based Quantum Dots on Untrathin SiO2 and Its Application to Light Emitting Diodes, K. Makihara; H. Deki; M. Ikeda; S. Miyazaki, 4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2012)
  318. Thermal Oxidation of Ge Surface - Impact of Oxidation Temperature on Ge Oxide Structure, 2012/01/21
  319. XPS Study of Changes in Chemical Structures at Metal/GeO2 Interfaces with Thermal Annealing, 2012/01/20
  320. Evaluation of Chemical Structure and Resistance-Switching Properties of RF Sputtered Si-rich Oxide Thin Film, 2012/01/20
  321. Control of Interfacial Reaction by Insertion of TaOx Layer to HfO2/Ge Interface, 2012/01/20
  322. Formation of Ultrathin Ta-Oxide Films by ALD and Layeer-by-Layer Methods and Evaluation of Interfacial Oxidation in the Film Formation on Ge, K. Mishima; H. Murakami; A. Ohta; S. K. Sahari; T. Fujioka; S. Higashi; S.Miyazaki, ICTF-15(15th International Conference on Thin Films 2011)
  323. Evaluation of Electronic Properties of Pillar-shaped Si Nanostructures by Conductive Atomic Force Microscop, J. Gao; K. Makihara; A. Ohta; M.Ikeda; S. Miyazaki; H. Kaki; T.Hayash, ICTF-15(15th International Conference on Thin Films 2011)
  324. Formation of PtAl Nanodots Induced by Remote Hydrogen Plasma, K.Makihara; M. Ikeda; A. Ohta; R. Ashihara; S. Higashi; S. Miyazaki, ICTF-15(15th International Conference on Thin Films 2011)
  325. Electrical Charging Characteristics of Hybrid Nanodots Floating Gates in MOS Device, S. Miyazaki; K. Makihara; A. Ohta; M. Ikeda, ICTF-15(15th International Conference on Thin Films 2011)
  326. Determination of Energy Band Alignment in Ultrathin Hf-based Oxide/Pt System, A. Ohta; H. Murakami; S. Higashi; S.Miyazaki, ICTF-15(15th International Conference on Thin Films 2011)
  327. Kinetics of Thermally Oxidation of Ge(100) Surface, S. K. Sahari; A. Ohta; M. Matsui; K. Mishima; H. Murakami; S. Higashi; S. Miyazaki, ICTF-15(15th International conference on Thin Films 2011)
  328. Impact of Oxide Thinning on Resistance Switching Behavior of RF Sputtered SiOx Dielectric Sandwiching with Pt Electrodes, A. Ohta; Y. Goto; S. Nishigaki; H. Murakami; S. Higashi; S. Miyazaki, 24th International Microprocesses and Nanotechnology Conference (MNC 2011)
  329. Formation of Metal-Semiconductor Hybrid Nanodots and Its Application to Functional Floating Gate, S. Miyazaki, BIT's 1st Annual World Congress of Nano-S&T-2011
  330. Formation and Characterization of Silicon-Quantum-Dots/Metal-Silicide-Nanodots Hybrid Stack and Its Application to Floating Gate Functional Devices, S.Miyazaki, 220th Electrochemical Society (ECS) Meeting
  331. Evaluation of Thermally-Grown Ge Oxide on Ge(100) and Ge(111) Surfaces, S. K. Sahari; A. Ohta; M. Matsui; H. Murakami; S. Higashi; S. Miyazaki, 2011 International Conference on Solid State Devices and Materials (SSDM)
  332. Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots with High Areal Dot Density, K. Makihara; H. Deki; M Ikeda; S.Miyazaki, 2011 International Conference on Solid State Devices and Materials (SSDM)
  333. Evaluation of Chemical Bonding Features of Thermally-Grown Ge Oxide/Ge(100) System
  334. Local Electrical Properties of Microcrystalline Germanium Thin Films By Kelvin Force Microscopy, K. Makihara; H. Deki; M Ikeda, S; Miyazaki, 24rd International Conference on Amorphous and Nanocrystalline Semiconductor (ICANS 24)
  335. Formation of Hybrid Nanodots Floating Gate For Functinal Memories, S.Miyazaki, THERMEC2011(International Conference on Processing & Manufactturing of Advanced Materials)
  336. Si LSI - Outlooks for Electronic Materials and Devices -, S.Miyazaki, 30th Electronic Materials Symposium
  337. Electrical Characterization of NiSi-NDs/Si-QDs Hybrid Stacked Floating Gate in MOS Capacitors, K. Makihara; M. Ikeda; A. Ohta; S. Miyazaki, 2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2011)
  338. Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering, A. Ohta; Y. Goto; S. Nishigaki; G. Wei; H. Murakami; S. Higashi; S. Miyazaki, 2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2011)
  339. Impact of Insertion of Ultrathin TaOx Layer at the Pt/TiO2 Interface on Resistive Switching Characteristics, G. Wei; H. Murakami; T. Fujioka; A. Ohta; Y. Goto; S. Higashi; S. Miyazaki, 17th biannual Conference on Insulating Films on Semiconductors 2011 (INFOS2011)
  340. Characterization of Chemical Bonding Features at Metal/GeO2 Interfaces by X-ray Photoelectron Spectroscopy, M. Matsui; H. Murakami; T. Fujioka; A. Ohta; S. Higashi; S. Miyazaki, 17th biannual Conference on Insulating Films on Semiconductors 2011 (INFOS2011)
  341. Characterization of Chemical and Electronic States of Ruthenium, K. Mishima; A. Ohta; H. Murakami; S. Higashi; S. Miyazaki, 6th International Symposium on Control of Semiconductor Interfaces
  342. Evaluation of Thermal Oxidation of Ge(100) and Ge(111) Surfaces, S. K. Sahari; A. Ohta; M. Masafumi; H. Murakami; S. Higashi; S. Miyazaki, 6th International Symposium on Control of Semiconductor Interfaces
  343. Control of Interfacial Reaction at HfO2/Ge Interface by an Insertion of TiOx Layer, H. Murakami; T. Fujioka; A. Ohta; K. Mishima; S. Higashi; S. Miyazaki, 6th International Symposium on Control of Semiconductor Interfaces
  344. Effects of Inserting an Ultrathin TaOx Layer to the Pt/TiO2 Interface on Resistive Switching Characteristics, G. Wei; H. Murakami; T. Fujioka; A. Ohta; Y. Goto; S. Higashi; S. Miyazaki, The 2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK)
  345. [Impact of Insertion of Ultrathin TaOx Layer at the Pt/Tio2 Interface on Resistive Switching Characteristics, G. Wei; H. Murakami; T. Fujioka; A. Ohta; Y. Goto; S. Higashi; S. Miyazaki
  346. Electrical Charging Characteristics of Pt-Nanodots Floating Gate in MOS Capacitors, K. Makihara; N. Morisawa; M. Ikeda; K. Matsumoto; M. Yamane; S. Higashi; S. Miyazaki, The 4th International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2011)
  347. Application of Remote Hydrogen Plasma to Selective Processing for Ge-based Devices -Crystallization, Etching and Metallization, S.Miyazaki, The 4th International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2011)
  348. Formation of Pt-germanide from Pt/a-Ge:H by Remote Hydrogen Plasma Exposure, K. Makihara; T. Matsumoto; T. Fujioka; M. Ikeda; S. Miyazaki, 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011)
  349. Formation of High Density PtSi Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing using Atmospheric Pressure DC Arc Discharge Micro-Thermal Plasma Jet, M. Yamane; M. Ikeda; R. Matsubara; Y. Nishida; K. Makihara; S. Higashi; S. Miyazaki, 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011)
  350. Characterization of Chemical and Electronic States of Ruthenium
  351. Characterization of Chemical Bonding Features at Metal/GeO2 Interface using X-ray Photoelectron Spectroscopy
  352. Formation of Ultra Thin Titanium Oxide on Germanium by Atomic Layer Deposition using TEMAT and O3, T. Fujioka; A. Ohta; H. Murakami; S. Higashi; S. Miyazaki, 2011 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF 2011)
  353. Characterization of Resistance-Switching of SiOx Dielectrics, Y. Goto; A. Ohta; H. Murakami; S. Higashi; S. Miyazaki, 2011 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF 2011)
  354. Impact of Y2O3 Addition of Chemical Bonding Features and Resistance Switching of TiO2, A. Ohta; Y. Goto; G. Wei; H. Murakami; S. Higashi; S. Miyazaki, 2011 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF 2011)
  355. XPS Study of Interfacial Reaction between Metal and Ge Oxide, A. Ohta; T. Fujioka; H. Murakami; S. Higashi; S. Miyazaki, 2011 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF 2011)
  356. Characteristics of Thin Film Transistors Fabricated by Solid Phase Crystallization and High Speed Lateral Crystallization Induced by Micro-Thermal-Plasma-Jet Irradiation, S. Hayashi; S. Higashi; H. Murakami; S. Miyazaki, The 17th International Display Workshop (IDW)
  357. Efficient Activation of As Atoms in Ultra Shallow Junction by Thermal Plasma Jet Induced Microsecond Annealing, 2010 International Symposium on Dry Process
  358. Formation of High Density Pt Nanodots on SiO 16:35–16:55 2 Induced by Millisecond Rapid Thermal Annealing using Thermal Plasma Jet, 2010 International Symposium on Dry Process
  359. Fabrication and Characterization of Hybrid Nanodots for Floating Gate Application, International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
  360. Geometry Dependencies of Switching Characteristics of Anodic Porous Alumina for ReRAM, S. Otsuka; R. Takeda; T. Shimizu; S. Shingubara; K. Makihara; S. Miyazaki; T. Watanabe; Y. Takano; K. Takase, 23rd International Microprocesses and Nanotechnology Conference (MNC)
  361. The Impact of Y2O3 Addition into TiO2 on Electronic States and Resistive Switching Characteristics, A. Ohta; Y. Goto; G. Wei; K. Makihara; H. Murakami; S. Higashi; S. Miyazaki, 23rd International Microprocesses and Nanotechnology Conference (MNC)
  362. Self-Align Formation of Si Quantum Dots, 218th ECS Meeting(Las Vegas)
  363. Characterization of Interfaces between Chemically-Cleaned or Thermally-Oxidized Germanium and Metals, 218th ECS Meeting(Las Vegas)
  364. Formation of Pseudo-Expitaxial Ge Films on Si(100) by Droplet of Ge Microliquid, 218th ECS Meeting(Las Vegas)
  365. Formation of Pt-germanide from Pt/a-Ge:H by Remote Hydrogen Plasma Treatment at Atmosphere Temperature, K. Makihara; Y. Miyazaki; T. Fujioka; T. Matsumoto; M. Ikeda; S. Miyazaki, 7th International Conference on Reactive Plasmas / 28th Symposium on Plasma Processing / 63rd Gaseous Electronics Conference (ICRP-7 / SPP-28 / GEC-63)
  366. Contribution of Carbon to Growth of Boron-Containing Cluster in Heavily B-doped Silicon, 2010 International Conference on Solid State Devices and Materials(Tokyo)
  367. Collective Tunneling Model in Charge Trap Type NVM Cell, 2010 International Conference on Solid State Devices and Materials(Tokyo)
  368. Efficient Activation of As in Ultrashallow Junction Induced by Thermal Plasma JetMicrosecond Annealing, 2010 International Conference on Solid State Devices and Materials(Tokyo)
  369. Study on Native Oxidation of Ge (111) and (100) Surfaces, 2010 International Conference on Solid State Devices and Materials(Tokyo)
  370. Multistep Electron Injection in a PtSi-Nanodots/Silicon-Quantum-Dots HybridFloating Gate in nMOSFETs, 2010 International Conference on Solid State Devices and Materials(Tokyo)
  371. Characterization of La- and Mg-Diffused HfO2/SiO2 Stack Structures of for Next Generation Gate Dielectrics, S.Miyazaki, 7th Pacific Rim International Conference on Advanced Materials and Processing(PRICM7)
  372. Collective Tunneling Model between Two-Dimensional Electron Gas to Si-Nano-Dot, 30th International Conference on the Physics of Semiconductors (ICPS2010)
  373. High Speed Lateral Crystallization of Amorphous Silicon Films Using Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistors, 2010 The Sixteenth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD'10)
  374. Improvement of Low Temperature Deposited Gate SiO2 Films' Reliability by Atmospheric Pressure Discharge Thermal-Plasma-Jet-Induced Millisecond Annealing, 2010 The Sixteenth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD'10)
  375. The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure, 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2010)
  376. Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Defect State Densities, 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2010)
  377. Formation of PtAl Nanodots Induced by Remote Hydrogen Plasma, International Symposium on Technology Evoluation for Silicon Nano-Electronics (ISTESNE)
  378. Formation and Characterization of Hybrid Nanodots Stack Structure and Its Application to Floating Gate Memories, International Symposium on Technology Evoluation for Silicon Nano-Electronics (ISTESNE)
  379. Multistep Electron Injection in PtSi-Nanodots/Silicon-Quantum-Dots Hybrid Floating Gate in MOS Structures, International Symposium on Technology Evoluation for Silicon Nano-Electronics (ISTESNE)
  380. Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures, International Symposium on Technology Evoluation for Silicon Nano-Electronics (ISTESNE)
  381. Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure, International Symposium on Technology Evoluation for Silicon Nano-Electronics (ISTESNE)
  382. High Density Formation of Ge Quantum Dots on SiO2, 5th International SiGe Technology and Device Meeting (ISTDM2010)
  383. Determination of Valence Band Alignment in SiO2/Si/Si0.55Ge0.45/Si(100) Heterostructures, 5th International SiGe Technology and Device Meeting (ISTDM2010)
  384. Optical Response of Si-Quantum- Dots/NiSi-Nanodots Hybrid Stacked Floating Gate, International Meeting for Future of Electron Devices, Kansai, (IMFEDK)
  385. Chemical Bonding Features at TiO2/Pt Interface and Their Impact on Resistance-Switching Properties, International Meeting for Future of Electron Devices, Kansai, (IMFEDK)
  386. Growth of Large Crystalline Grains by High Speed Scanning of Melting Zone Formed by Micro-Thermal-Plasma-Jet Irradiation to Amorphous Silicon Films, 2010 MRS Spring Meeting
  387. Temporal Change in the Native Oxidation of Chemically-cleaned Ge(100) Surfaces
  388. The Effect of Anneal Ambient on Resistive Switching Properties with Pt/TiO2/Pt Structure
  389. The Effect of Anneal Ambient on Resistive Switching Properties with Pt/TiO2/Pt Structure
  390. Charging and magnetizing Characteristics of Co Nanodots, The 3rd International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2010)
  391. Selective Crystallization and Etching of a-Ge:H Thin Films by Exposing to Remote H2 Plasma, 2nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2010)
  392. Formation of Hybrid Nanodots Floating Gate for Functional Memories –Charge Strage Characteristics and Optical Response–, 5th International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2010)
  393. Evaluation of Valence Band Offsets for SiO2/Si/SiGe0.5/Si Heterostructures Using by X-ray Photoelectron Spectroscopy, 5th International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2010)
  394. Charge Storage and Optical Response of Hybrid Nanodots Floating Gate For Functional Memories, 2009 MRS Fall Meeting
  395. Charge Injection Characteristics of NiSi-Nanodots/Silicon-Quantum-Dots Hybrid Floating Gate in MOS Structures, 2009 International Microprocesses and Nanotechnology Conference (MNC2009)
  396. Impact of Surface Pre-Treatment on Metal Migration Induced by Remote H2-Plasma Treatment, 2009 International Microprocesses and Nanotechnology Conference (MNC2009)
  397. Pseude-Epitaxial Growth of Silicon Microliquid Dropped on Hydrogen Terminated Silicon Wafer Surface, 19th International Photovoltaic Science and Engineering Conference and Exhibition (PVSEC-19)
  398. Activation of B and As in Ultra Shallow Junction with Heating and Cooling Rates Controlled Millisecond Annealing Induced by Thermal Plasma Jet, 2009 International Conference on Solid State Devices and Materials (SSDM)
  399. New Tunneling Model with Dependency of Temperature Measured in Si Nano-Dot Floating Gate MOS Capacitor, 2009 International Conference on Solid State Devices and Materials (SSDM)
  400. Light Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid FG in MOS Structure, 2009 International Conference on Solid State Devices and Materials (SSDM)
  401. Hole Tunnel Currents in TiN/HfSiOxN/SiO2/p-Si(100) MOS Capacitors, 2009 International Conference on Solid State Devices and Materials (SSDM)
  402. Evaluation of Effective Work Function of Pt on Bi-layer High-k/SiO2 Stack Structure using by Backside X-ray Photoelectron Spectroscopy, 2009 International Conference on Solid State Devices and Materials (SSDM)
  403. Formation of Cobalt and Cobalt-silicide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma, International Symposium on Dry Process (DPS2009)
  404. Formation of High Quality SiO2 and SiO2/Si Interface using Thermal Plasma Jet Induced Millisecond Annealing and Post-Metallization Annealing, International Symposium on Dry Process (DPS2009)
  405. Formation of Si Quantum Dots/Silicide Nanodots Stack Structure and Its Memory Application, 1st International Workshop on Si based nano-electronics and photonics (SiNEP-09)
  406. Formation of High Density Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Memory Application, International Conference on Processing and Manufacturing of Advanced Materials, Pricessing, Fabrication, Proreties, Applications (THERMEC'2009)
  407. Effect of Chemical Composition of SiOx Films on Rapid Formation of Si Nanocrystals Induced by Thermal Plasma Jet Irradiation, 23rd International Conference on Amorphous and Nanocrystalline Semiconductor (ICANS 23)
  408. Control of Growth Orientation during Rapid Solidification of Si Microliquid, 23th International Conference on Amorphous and Nanocrystalline Simiconductores (ICANS23)
  409. Fabrication of Metal Silicide Nanodots and Hybrid Stacked Structure in Combination with Silicon Quantum Dots for Floating Gate Application
  410. Fabrication of Metal Silicide Nanodots and Hybrid Stacked Structure in Combination with Silicon Quantum Dots for Floating Gate Application, The 3rd Asian Physucs Symposium (APS 2009)
  411. Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices, 14th International Conference on Modulated Semiconductor (MSS-14)
  412. Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices, 14th International Conference on Modulated Semiconductor (MSS-14)
  413. Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots, The 18th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-18)
  414. Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots, The 18th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-18)
  415. Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Technique, 2009 The Sixteenth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD'09)
  416. Characterization of Interfacial Reaction and Chemical Bonding Features of LaOx/HfO2 Stack Structure Formed on Thermally-grown SiO2/Si(100), 16th biannual Conference on Insulating Films on Semiconductors 2009 (INFOS2009)
  417. Electrical Detection of Silicon Binding Protein-Protein A using a p-MOSFET Sensor, 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2009)
  418. Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots, 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2009)
  419. Formation Mechanism of Metal Nanodots Induced by Remote Plasma Exposure, The European Materials Research Society (E-MRS) 2009 Spring Meeting
  420. Formation and Characterization of Hybrid Nanodot Stack Structure for Floating Gate Application, 6th International Conference on Silicon Epitaxiy and Heterostructures (ICSI-6)
  421. Formation and Characterization of Hybrid Nanodot Stack Structure for Floating Gate Application, 6th International Conference on Silicon Epitaxiy and Heterostructures (ICSI-6)
  422. Electrical Charging Characteristics of NiSi-Nanodots Floating Gate, International Meeting for Future of Electron Devices, Kansai, (IMFEDK)
  423. Si Nanocrystals Formation in SiO2/SiOx/SiO2 Stack Structure by Thermal Plasma Jet Annealing and Its Application to Floating Gate Memory, Material Research Society Spring Meeting
  424. Sugakawa and S. Miyazaki, Si Nanocrystals Formation in SiO2/SiOx/SiO2 Stack Structure by Thermal Plasma Jet Annealing and Its Application to Floating Gate Memory, 2009 MRS Spring Meeting
  425. Surface Potential Changes Induced by Physisorption of Silica Binding Protein-Protein A on Thermally Grown SiO2/Si(111) Surface
  426. New Insight into Tunneling Process between Quantum Dot and Electron Gas, America Physical Society 2009 March Meeting
  427. Temperature Dependence of Electron Tunneling between Quantum Dots and Electron Gas, America Physical Society 2009 March Meeting
  428. New Insight into Tunneling Process between Quantum Dot and Electron Gas, America Physical Society 2009 March Meeting
  429. Temperature Dependence of Electron Tunneling between Quantum Dots and Electron Gas, America Physical Society 2009 March Meeting
  430. Temperature Dependence of Electron Tunneling from Two Dimensional Electron Gas to Quantum Dots, The Second International Symposium on Interdisciplinary Materials Science (ISIMS-2009)
  431. Temperature Dependence of Electron Tunneling from Two Dimensional Electron Gas to Quantum Dots, The Second International Symposium on Interdisciplinary Materials Science (ISIMS-2009)
  432. A Novel Millisecond Crystallization Technique Using Si Micro Liquid, The 5th International Thin-Film Transistor Conference 2009, Ecole Polytechnique
  433. Improvement of Bond Structure and Electrical Properties of Low-Temperature Deposited SiO2 Films by Thermal Plasma Jet Induced Millisecond Annealing, Plasma Science Symposium 2009 and 26th Symposium on Plasma Processing (PSS-2009/SPP-26)
  434. Impact of Remote Plasma Treatment on Formation of Metal Nanodots on Ultrathin SiO2, The 2nd International Conference on Plasma-Nano Technology & Science
  435. Temperature Dependence of Electron Transport between Quantum Dots and Electron Gas, International Symposium on Nanoscale Transport and Technology
  436. Plasma-enhanced Self-assembling Formation of Metallic Nanodots on Ultrathin SiO2 for Floating Gate Application, International Union Material Research Society (IUMRS) - International Conference in Asia, Nagoya
  437. Capacitance measurements on quantum dots coupled to a two-dimensional electron system, 13th Advanced Heterostructures and Nanostructures Workshop
  438. Theoretical investigation of quantum dot coupled to a two-dimensional electron system, 13th Advanced Heterostructures and Nanostructures Workshop
  439. Generation of High Density Thermal Plasma Jet and Its Application to Millisecond Annealing of Si Wafer Surface for Shallow Junction Formation, H. Furukawa; S. Higashi; T. Okada; H. Murakami; S. Miyazaki, 30th International Symposium on Dry Process (DPS 2008), 2008/11, Tokyo
  440. Metal Nanodots Formation Induced by Remote Plasma Treatment -Comparison between the effects of H2 and rare gas plasmas-, International Union Material Research Society - International Conference in Asia 2008 (IUMRS-ICA 2008)
  441. Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique, International Union Material Research Society - International Conference in Asia 2008 (IUMRS-ICA 2008)
  442. La-Oxide Thin Films Formed by MOCVD Using La(TMOD)3, International Union Material Research Society - International Conference in Asia 2008 (IUMRS-ICA 2008)
  443. XPS Study of TiAlN/HfSiON Gate Stack - Impact of Al Redistribution on Effective Work Function Change -, A. Ohta; T. Mori; H. Yoshinaga; H. Murakami; S. Miyazaki; M. Kadoshima; Y. Nara, 2008 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF), 2008/11/06, Tokyo
  444. Characterization of Chemical Bonding Features in HfGdxOy film formed by MOCVD using DPM precursors, D. Kanme; A. Ohta; R. Yougauchi; H. Murakami; S. Higashi; S. Miyazaki, 2008 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF), 2008/11/05, Tokyo
  445. Characterization of Chemical Bonding Features and Electronic States of Ni-Silicide Nanodots Formed by a Remote H2-Plasma Assisted Technique, The 4th Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA-4)
  446. Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO2, 214th Electrochemical Society (ECS) Meeting : SiGe & Ge Materials, Processing and Device Symposium
  447. Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Annealing and Its Application to Floating Gate Memory, The Electrochemical Society 214th Meeting
  448. Formation of Ultra High Density Si-based Quantum Dots on Ultrathin SiO2, K. Makihara; A. Kawanami; M. Ikeda; S. Higashi; S. Miyazaki, 4th International WorkShop on New Group IV Semiconductor Nanoelectronics (SiGe(C)2008), 2008/09/27, Sendai
  449. AFM/KFM Detection of Si-tagged ProteinA on HF-last Si(100), Thermally Grown SiO2 and Si-QDs Surfaces, K. Makihara; M. Ikeda; S. Higashi; Y. Hata; A. Kuroda; S. Miyazaki, 4th International WorkShop on New Group IV Semiconductor Nanoelectronics (SiGe(C)2008), 2008/09/27, Sendai
  450. Formation of Metallic Nanodots on Ultrathin Gate Oxide Induced by H2-plasma Treatment and Its Application to Floating Gate Memories, S. Miyazaki; M. Ikeda; K. Makihara; K. Shimanoe; R. Matsumoto, 4th International WorkShop on New Group IV Semiconductor Nanoelectronics (SiGe(C)2008), 2008/09/27, Sendai
  451. Millisecond Rapid Thermal Annealing of Si Wafer Induced by High Density Thermal Plasma Jet Irradiation, H. Furukawa; S. Higashi; T. Okada; H. Murakami; S. Miyazaki, 2008 International Conference on Solid State Devices and Materials (SSDM 2008), 2008/09/26, Tsukuba
  452. Photoemission Study of Chemical Bonding Features and Electronic States of Ultrathin HfTixOy/Pt System, A. Ohta; H. Murakami; S. Higashi; S. Miyazaki; M. Tanioku; M. Horikawa; A. Ogishima, 2008 International Conference on Solid State Devices and Materials (SSDM 2008), 2008/09/25, Tsukuba
  453. Charge Injection and Emission Characteristics of Hybrid Floating Gate Stack Consisting of NiSi-Nanodots and Silicon-Quantum-Dots, M. Ikeda; R. Matsumoto; K. Shimanoe; K. Makihara; S. Miyazaki, 2008 International Conference on Solid State Devices and Materials (SSDM 2008), 2008/09/24, Tsukuba
  454. Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application, S. Miyazaki; M. Ikeda; K. Makihara; K. Shimanoe, The European Materials Research Society (E-MRS) 2008 Fall Meeting, 2008/09, Warszawa
  455. Photoluminescent Properties of Thermal Plasma Jet Annealed SiOx Films Prepared by Plasma Enhanced Chemical Vapor Deposition, 1st International Conference on Microelectronics and Plasma Technology (ICMAP)
  456. Characteristics tunneling of Si quantum dot floating gate at low temperature and in magnetic fields, 25th International Conference on Low Temperature Physics, Amsterdam
  457. Electrical Properties of Highly Crystallized Ge:H Thin Films Grown from VHF Inductively-Coupled Plasma of H2-diluted GeH4, H. Kaku; K. Makihara; M. Ikeda; S. Higashi; S. Miyazaki, 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2008), 2008/07/11, Sapporo
  458. Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories, K. Shimanoe; K. Makihara; M. Ikeda; S. Miyazaki, 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2008), 2008/07/10, Sapporo
  459. Electrical Detection of Si-Tagged Proteins on HF-last Si(100) and Thermally Grown SiO2 Surfaces, S. Mahboob; K. Makihara; H. Kaku; M. Ikeda; S. Higashi; S. Miyazaki; A. Kuroda, 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2008), 2008/07/10, Sapporo
  460. Application of Thermal Plasma Jet Annealing to Channel Crystallization and Doping for Thin Film Transistor Fabrication, H. Kaku; S. Higashi; T. Yorimoto; T. Okada; H.Furukawa; S. Miyazaki, 2008 The Fifteenth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD'08), 2008/07, Tokyo
  461. Formation of metal and silicide nanodots on ultathin gate oxide induced by H2-plasma, 17th World Interfinish Congress & Exposition with 9th International Conference on Advanced Surface Engineerring (9th ICASE)
  462. Formation of Ni- and Pt-Nanodots Induced by Remote Hydrogen Plasma Treatment and Their Application to Floating Gate MOS Memories, M. Ikeda; K. Shimanoe; R. Matsumoto; K. Makihara; S. Miyazaki, The 2008 International Meeting for Future of Electron Devices, Kansai (IMFEDK), 2008/05, Osaka
  463. In-situ Monitoring of Si Wafer Temperature during Millisecond Rapid Thermal Annealing, The Electrochemical Society 213th Meeting
  464. Photoemission Study of Metal/HfSiON Gate Stack, The 213th Electrochemical Society (ECS) Meeting
  465. Characterization of Thermal Stability of HfO2/SiON/Ge(100) Stacked Structure by using Photoemission Spectroscopy, A. Ohta; H. Nakagawa; H. Murakami; S. Higashi; S. Miyazaki, 4th International SiGe Technology and Device Meeting (ISTDM2008), 2008/05, Hsinchu, Taiwan
  466. Photoemission Study of Ultrathin Germanium Oxide/Ge(100) Interfaces, H. Murakami; M. Miura; A. Ohta; R. Yougauchi; S. Higashi; S. Miyazaki, 4th International SiGe Technology and Device Meeting (ISTDM2008), 2008/05, Hsinchu, Taiwan
  467. Selective Growth of Self-Assembling Si and SiGe Quantum Dots, K. Makihara; A. Kawanami; M. Ikeda; S. Higashi; S. Miyazaki, 4th International SiGe Technology and Device Meeting (ISTDM2008), 2008/05, Hsinchu, Taiwan
  468. Formation of Low-Defect-Concentration Polycrystalline Si Films by Thermal Plasma Jet Crystallization and Their application to Thin-Film Transistor, Material Research Society Spring Meeting
  469. High Rate Growth of Highly Crystallized Ge:H Thin Films from VHF Inductively-Coupled Plasma of GeH4, The 1st International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2008)
  470. Photoluminescent Properties of SiOx Films Formed by Plasma Enhanced Chemical Vapor Deposition, The 1st International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2008)
  471. Impact of Annealing condition on the Efficiency of Dopant Activation Induced by Thermal Plasma Jet Crystallization of Heavily-Phosphorus-Doped Amorphous Si films, The 1st International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2008)
  472. Formation of Source and Drain for Polycrystalline Si Thin Film Transistors Using Thermal Plasma Jet Induced Impurity Activation, H. Kaku; S. Higashi; T. Yorimoto; T. Okada; H. Furukawa; H. Murakami; S. Miyazaki, International TFT Conference 2008, 2008/01, Seoul, Korea
  473. Practical dual-metal-gate dual-high-k CMOS integration technology for hp 32 nm LSTP utilizing process-friendly TiAlN metal gate, M. Kadoshima; T. Matsuki; M. Sato; T. Aminaka; E. Kurosawa; A. Ohta; H. Yoshinaga; S. Miyazaki; K. Shiraishi; K. Yamabe; K. Yamada; T. Aoyama; Y. Nara; Y. Ohji, International Electron Device Meeting 2007 (IEDM), 2007/12, Washington DC
  474. Photoemission Study of Metal/High-k Dielectric Gate Stack, The 38th IEEE Semiconductor Interface Specialists Conference (SISC)
  475. Photoemission Study of Chemical Bonding Features and Electronic States of Ultrathin HfLaxOy Film, International Conference of Atomic Control Surface and Interface-9 (ACSIN-9)
  476. High Rate Growth of Highly-Crystallized Ge Films on Quartz from VHF Inductively-Coupled Plasma of GeH4 + H2, The Sixth Pacific Rim International Conference on Advanced Materials and Processing (PRICM6)
  477. Electron Charging and Discharging Characteristics of Si-Based Quantum Dots and Their Application of Floating Gate MOS Memories, 3rd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2007)
  478. Self-Assembling Formation of Si-Based Quantum Dots and Control of Their Electronic Charged States for Multivalued MOS Memories, 10th International Conference on Advanced Materials - International Union of Materials Research Societies
  479. Improvement in Fermi-Level Pinning of p-MOS Metal Gate Electodes on HfSiON by Employing Ru Gate Electrodes, The 212th Electrochemical Society (ECS) Meeting
  480. Characterization of Electoronic Charged States of Si-Based Quantum Dots for Floating Gate Application, 212th Electrochemical Society (ECS) Meeting
  481. Rapid Phase Transformation of Amorphous Ge Films Induced by Semiconductor Diode Laser Irradiation, Laser Processing for Semiconductor Devices : sciences and technology (LPSD)
  482. Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique, The Sixth Pacific Rim International Conference on Advanced Materials and Processing (PRICM6)
  483. Control of 60MHz Inductively-Coupled Plasma of H2-Diluted GeH4 for High Rate Growth of Crystalline Ge Films at Low Temperatures, 22nd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS22)
  484. High Efficiency Activation of Phosphorus Atoms Induced by Thermal Plasma Jet Crystallization of Doped Amorphous Si Films, High Efficiency Activation of Phosphorus Atoms Induced by Thermal Plasma Jet Crystallization of Doped Amorphous Si Films
  485. Formation of Ni Nanodots Induced by Remote Hydrogen Plasma, The European Materials Research Society (E-MRS) 2007 Spring Meeting
  486. Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories, 5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5)
  487. Theoretical Studies on Metal/High-k Gate Stacks, The 211th Electrochemical Society (ECS) Meeting, Illinois
  488. Electrical Characteristics of Lightly-Doped Si Films Crystallized by Thermal Plasma Jet Irradiation, T. Yorimoto; S. Higashi; H. Kaku; T. Okada; H. Murakami; S. Miyazaki; M. Maki; T. Sameshima, Material Research Society Japan
  489. Effect of He Addition on the Heating Characteristics of Substrate Surface Irradiated by Ar Thermal Plasma Jet, T. Okada; S. Higashi; H. Kaku; N. Koba; H. Murakami; S. Miyazaki, International Symposium on Dry Process (DPS 2006)
  490. Crystallization of Amorphous Ge Films Induced by Semiconductor Diode Laser Annealing, K. Sakaike; S. Higashi; H. Kaku; T. Sakata; H. Murakami; S. Miyazaki, International Symposium on Dry Process (DPS 2006)
  491. Nucleation Study of Hydrogenated Microcrystalline Silicon (μc-Si:H) Films Deposited by VHF-ICP, T. Karakawa; S. Higashi; H. Murakami; S. Miyazaki, T. Karakawa, S. Higashi, H. Murakami, S. Miyazaki
  492. A New Insight into Control of Fermi Level Pinning in TiN/HfSiON Gate Stack, A. Ohta; S. Miyazaki; Y. Akasaka; H. Watanabe; K. Shiraishi; K. Yamada; S. Inumiya; Y. Nara, 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF)
  493. Characterization of Dielectric Stack Structures of Hafnium Silicate and Silicon Oxynitride formed on Si(100), A. Ohta; H. Nakagawa; H. Murakami; S. Higashi; S. Miyazaki; T. Kawahara; K. Torii; Y. Nara, 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF)
  494. Photoemission Study of HfO2/Ge(100) Stacked Structures, H. Nakagawa; A. Ohta; H. Murakami; S. Higashi; S. Miyazaki, 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF)
  495. Analysis of Leakage Current through Ultrathin HfSiOxN/SiO2 Stack Gate Dielectric Capacitors with TiN/W/TiN Gate, Y. Pei; A. Ohta; H. Murakami; S. Higashi; S. Miyazaki; T. Akasaka; Y. Nara, 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF)
  496. Study of Charged states of Si Quantum Dots with Ge Core, K. Makihara; M. Ikeda; S. Higashi; S. Miyazaki, 210th Electrochemical Society (ECS) Meeting : SiGe & Ge Materials, Processing, and Device Symposium
  497. Physics of Metal/High-k Interfaces, T. Nakayama; K. Shiraishi; S. Miyazaki; Y. Akasaka; K. Torii; P. Ahme; K. Ohmori; N. Umezawa; H. Watanabe; T. Chikyow; Y. Nara; A. Ohta; H. Iwai; K. Yamada; T. Nakaoka, 210th Electrochemical Society(ECS) Meeting
  498. Depth Profiling of Chemical and Electronic Structures and Defects of Ultrathin HfSiON on Si(100), S. Miyazaki; A. Ohta; Pei, S; Inumiya; Y. Nara; K. Yamada, 210th Electrochemical Society (ECS) Meeting
  499. Characterization of Electronic Charged States of Si-based Quantum Dots for Multi-valued MOS Memories, S. Miyazaki; K. Makihara; M. Ikeda, 8th International Conference on Solid-State and Integrated-Circuit Technology
  500. Characterization of Chemical Bonding Features of Silicon Oxynitride Films Formed on Ge(100) Surfaces, H. Nakagawa; A. Ohta; H. Murakami; S. Higashi; S. Miyazaki, Second Int. Workshop on New Group Ⅳ Semiconductor Nanoelectronics (SiGe(C)2006)
  501. Formation of Highly-Crystallized Ge:H Films form VHF Inductively-Coupled Plasma of GeH4, T. Sakata; K. Makihara; S. Higashi; S. Miyazaki, 2nd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2006)
  502. Semiconductor Diode Laser Annealing of Amorphous Ge Films, K. Sakaike; S. Higashi; H. Kaku; T. Sakata; H. Murakami; S. Miyazaki, 2nd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2006)
  503. Control of Electronic Charged States of Si-based Quantum Dots for Floating Gate Application, S. Miyazaki; K. Makihara; M. Ikeda, 2nd International Workshop in New Group IV Semiconductor Nanoelectronics (SiGe(C)2006)
  504. Evaluation of Chemical Structures and Work Function of NiSi near the Interface between Nickel Silicide and SiO2, A. Ohta; H. Yoshinaga; H. Murakami; D. Azuma; Y. Munetaka; S. Higashi; S. Miyazaki; T. Aoyama; K. Hosaka; K. Shibahara, 2006 International Conference of Solid State of Device and Materials (SSDM2006)
  505. Characterization of Electronic Charged States of Impurity Doped Si Quantum Dots Using AFM/Kelvin Probe Technique, K. Makihara; Y. Kawaguchi; H. Murakami; S. Higashi; S. Miyazaki, International Union Material Research Society - International Conference in Asia (IUMRS-ICA 2006)
  506. Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation, K. Sakaike; S. Higashi; H. Kaku; H. Murakami; S. Miyazaki, 2006 International Workshop on ACTIVE-MATRIX FLATPANEL DISPLAY AND DEVICES (AM-FPD'06)
  507. Phosphorus Doping to Si Quantum Dots and Its Floating Gate Application, K. Makihara; Y. Kawaguchi; M. Ikeda; H. Murakami; S. Higashi; S. Miyazaki, 2006 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2006)
  508. Influences of Nitrogen Incorporation on Electronic Structure and Electrical Properties of Ultrathin Hafnium Silicate, S. Miyazaki; A. Ohta; S. Inumiya; Y. Nara, The European Materials Research Society (E-MRS) 2006 Spring Meeting
  509. Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories, S. Miyazaki; M. Ikeda; K. Makihara, 209th Electrochemical Society-International Symposium on Nanoscale Devices and Materials
  510. Impact of He Addition on the Substrate Surface Temperature During Rapid Thermal Annealing Induced by Ar Thermal Plasma Jet Irradiation, T. Okada; S. Higashi; N. Koba; H. Kaku; H. Murakami; S. Miyazaki, 8th International Conference on Advanced Surface Engineering
  511. Charging and Discharging Characteristics of P-doped Si Quantum Dots Floating Gate, K. Makihara; T. Nagai; M. Ikeda; Y. Kawaguchi; H. Murakami; S. Higashi; S. Miyazaki, The 2006 International Meeting for Future of Electron Devices, Kansai (IMFEDK)
  512. Correlation between Annealing Temperature and Crystallinity of Si Films Prepared by Thermal Plasma Jet Crystallization Technique, H. Kaku; S. Higashi; T. Okada; H. Murakami; S. Miyazaki, Material Research Society Spring Meeting
  513. Direct Observation of Millisecond Phase Transformation in a-Si Films Induced by Thermal Plasma Jet Irradiation, H. Kaku; S. Higashi; T. Okada; H. Murakami; S. Miyazaki, Int. TFT Conference
  514. Self-Assembling Formation of Si Quantum Dots and its Application to Floating Gate MOS Devices, M. Ikeda; S. Miyazaki, Japan-Korea Special Symposium on Evaluation and Outlook of Oxide Nonvolatile Memories, in The 16th Symposium of The Materials Research Society of Japan
  515. Characterization of Sb-Doped Fully-Silicided NiSi/SiO2/Si MOS Structure, T. Hosoi; K. Sano; M. Hino; A. Ohta; K. Makihara; H. Kaku; S. Miyazaki; K. Shibahara, 2005 International Semiconductor Device Research Symposium
  516. Growth of Crystallized Ge Films from VHF-Inductively Coupled Plasma of H2-Diluted GeH4, T. Sakata; K. Makihara; S. Higashi; S. Miyazaki, 2005 International Symposium on Dry Process (DPS 2005)
  517. Control of Substrate Surface Temperature in Millisecond Annealing Technique Using Thermal Plasma Jet, T. Okada; S. Higashi; H. Kaku; N. Koba; H. Murakami; S. Miyazaki, 2005 International Symposium on Dry Process (DPS 2005)
  518. Photoemission Study of Ultrathin GeO2/Ge Heterostructures Formed by UV-O3 Oxidation, A. Ohta; H. Murakami; S. Higashi; S. Miyazaki, 4th International Symposium on Surface Science and Nanotechnology (ISSS-4)
  519. Control of Discrete Charged States in Si-Based Quantum Dots and Its Application to Floating Gate Memories, S. Miyazaki, The 4th International Symposium Surface Science and Nanotechnology
  520. Self-Assembling Formation of Si-based Quantum Dots and Control of Their Electric Charged States for Multi-valued Memories, S. Miyazaki, SPIE Conference on Nanofabrication: Technologies, Devices, and Applications II (SA111) at Optics East
  521. Electron Charging and Discharging Characteristics of Si-based Quantum Dots Floating Gate, S. Miyazaki, The Second International Symposium on Point Defects and Nonstoichiometry (ISPN-2)
  522. Characterization of MultiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases, T. Nagai; M. Ikeda; Y. Shimizu; S. Higashi; S. Miyazaki, 2005 International Conference on Solid State Devices and Materials (SSDM2005)
  523. The Application of Very High Frequency Inductively-Coupled Plasma to High-Rate Growth of Microcrystalline Silicon Films, S. Miyazaki; N. Kosku, 21st International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS21)
  524. Analysis of Transient Temperature Profile During Thermal Plasma Jet Annealing of Si Films on Quartz Substrate, T. Okada; S. Higashi; H. Kaku; H. Murakami; S. Miyazaki, 2005 International Workshop on Active-Matrix Liquid-Crystal Displays (AM-LCD 05)
  525. Experimental Evidence of Coulombic Interaction among Stored Charges in Single Si Dot as Detected By AFM/Kelvin Probe Technique, J. Nishitani; K. Makihara; Y. Darma; H. Murakami; S. Higashi; S. Miyazaki, 2005 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2005)
  526. The Application of Multiple-Stacked Si Quantum Dots to Light Emitting Diodes, K. Makihara; Y. Kawaguchi; H. Murakami; S. Higashi; S. Miyazaki, 2005 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2005)
  527. Characterization of Chemical Bonding Features of NH3-Annealed Hafnium Oxides Formed on Si(100), H. Nakagawa; F. Takeno; A. Ohta; H. Murakami; S. Higashi; S. Miyazaki, 8th Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-8)
  528. Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots, J. Xu; K. Makihara; H. Deki; Y. Kawaguchi; H. Murakami; S. Higashi; S. Miyazaki, 2005 China International Conference on Nanoscience & Technology
  529. Fabrication of Multiply-Stacked Structures Consisting of Si-QDs with Ultrathin SiO2 and Its Application of Light Emitting Diodes, K. Makihara; J. Xu; H. Deki; Y. Kawaguchi; H. Murakami; S. Higashi; S. Miyazaki, First International Workshop in New GroupIV Semiconductor Nanoelectronics (SiGe(C)2005)
  530. Control of Charged States of Silicon-Based Quantum Dots and Its Application to Floating Gate MOS Memories, S. Miyazaki, First International Workshop on New Group IV Semiconductor Nanoelectronics (SiGe(C)2005)
  531. Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique, J. Nishitani; K. Makihara; M. Ikeda; H. Murakami; S. Higasi; S. Miyazaki, Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4)
  532. Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/KFM Probe, K. Makihara; J. Xu; M. Ikeda; H. Murakami; S. Higasi; S. Miyazaki, Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4)
  533. In-situ Observation of Rapid Crystalline Growth Induced by Excimer Laser Irradiation to Ge/Si Stacked Structure, A. Yamashita; Y. Okamoto; S. Higashi; S. Miyazaki; H. Watakabe; T. Sameshima, Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4)
  534. Light Emitting Devices from Multilayered Si Quantum Dots Structures, K. Makihara; J. Xu; H. Deki; Y. Kawaguchi; H. Murakami; S. Higashi; S. Miyazaki, The 2005 International Meeting for Future of Electron Devices, Kansai (IMFEDK)
  535. Fabrication of Polycrystalline Si Thin Film Transistor using Plasma Jet Crystallization Technique, H. Kaku; S. Higashi; T. Okada; H. Murakami; S. Miyazaki; H. Watakabe; N. Andoh; T. Sameshima, The 2005 International Meeting for Future of Electron Devices, Kansai (IMFEDK)
  536. High Rate Growth of Crystalline Si and Ge Films from Inductively-Coupled Plasma, S. Miyazaki, SREN 2005 International Conference on Solar Renewable Energy News, Low Energy Buildings, Research of Historical Artifacts
  537. Fabrication of Multiple-Stacked Si Quantum Dots and Its Application to Light Emitting Diodes, K. Makihara; Y. Kawaguchi; M. Ikeda; H. Murakami; S. Higashi; S. Miyazaki, The 4th International Symposium on Nanotechnology
  538. Characterization of Charged States of Silicon-based Quantum Dots and Its Application to Floating Gate MOS Memories, S. Miyazaki, International Union of Materials Research Societies-Int. conf. in Asia-
  539. Fabrication of Multiply-Stacked Structures of Si Quantum-Dots Embedded in SiO2 by Combination of Low-Pressure CVD with Remote Plasma Treatments, K. Makihara; H.Nakagawa; M.Ikeda; H.Murakami; S.Higashi; S.Miyazaki, 2004 International Microprocesses and Nanotechnology Conference
  540. Electrical Charging Characteristics of Silicon Dots Floating Gates in MOS Devices, S. Miyazaki, 7th China-Japan Symposium on Thin Films
  541. Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories, T. Nagai; M. Ikeda; H. Murakami; S. Higashi; S. Miyazaki, 2004 International Conference on Solid State Devices and Materials (SSDM2004)
  542. Evaluation of Electronic Defect States at Poly-Si/HfO2 interface by Photoelectron Yield Spectroscopy, M. Sugimura; A. Ohta; H. Nakagawa; T. Shibaguchi; S. Higashi; S. Miyazaki, 2004 International Conference on Solid State Devices and Materials (SSDM2004)
  543. Crystallization of Si Films on Glass Substrate Using Thermal Plasma Jet, S. Higashi; H. Kaku; H. Taniguchi; H. Murakami; S. Miyazaki, International Conference on Polycrystalline Semiconductors 2004 (POLYSE2002)
  544. Crystallization of Si Thin Film Using Thermal Plasma Jet and Its Application to Thin-Film Transistor Fabrication, S. Higashi; H. Kaku; H. Murakami; S. Miyazaki; M. Asami; H. Watakabe; N. Ando; T. Sameshima, 2004 International Workshop on Active-Matrix Liquid-Crystal Displays (AM-LCD 04)
  545. Characterization of germanium nanocrystallites grown on quartz by a conductive AFM probe technique, K. Makihara; Y. Okamoto; H. Murakami; S. Higashi; S. Miyazaki, 2004 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2004)
  546. Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots, T. Shibaguchi; M. Ikeda; H. Murakami; S. Miyazaki, 2004 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2004)
  547. Characterization of Atom Diffustion in Polycrystalline Si/SiO2/Si Stacked Gate, H. Murakami; Y. Moriwaki; M. Fujitake; D. Azuma; S. Higashi; S. Miyazaki, 2004 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2004)
  548. Control of the Nucleation Density of Si Quantum Dots by Remote Hydrogen Plasma Treatment, K. Makihara; H. Deki; H. Murakami; S. Higasi; S. Miyazaki, 12th Int. Conf. on Solid Films and Surface (ICSFS-12)
  549. Formation of Microcrystalline Germanium (μc-Ge:H) Films From Inductively-Coupled Plasma CVD, Y. Okamoto; K. Makihara; S. Higasi; S. Miyazaki, 12th International Conference on Solid Films and Surface (ICSFS-12)
  550. A new crystallization technique of Si films on glass substrate using thermal plasma jet, H. Kaku; S. Higashi; H. Taniguchi; H. Murakami; S. Miyazaki, 12th International Conference on Solid Films and Surfaces (ICSFS-12)
  551. Influence of Substrate DC Bias on Crystallinity of Si Films Grown at a High Rate from Inductively-Coupled Plasma CVD, N. Kosku; H. Murakami; S. Higashi; S. Miyazaki, 12th International Conference on Solid Films and Surfaces (ICSFS-12)
  552. Impact of Rapid Thermal O2-Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide formed on Si(100), A. Ohta; S. Miyazaki; H. Murakami; T. Kawahara; K. Torii, 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF)
  553. Characterization of Interfacial Oxide Layers in Heterostructures of Hafnium Oxides Formed on NH3-nitrided Si(100), H. Nakagawa; A. Ohta; F. Takeno; S. Nagamachi; H. Murakami; S. Higashi; S. Miyazaki, 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF)
  554. Charging/Discharging Characteristics of Silicon Quantum Dots and Their Application to Memory Devices, S. Miyazaki, The 2004 Joint Conference of The 7th International Conference on Advanced Surface Enginnering (ASE2004) and The 2nd International Conference on Surface and Interface Science and Engineering (SISE 2004) FSISE

Awards

  1. 2011/03, ISPlasma2012 Best Presentation Award, ISPlasma2012 Organizing Committee Chair
  2. 2009/09, JSAP Fellow Award, The Japan Society of Applied Physics
  3. 2004/05, Selete Achievement Award, Semiconductor Leading Edge Technologies, Inc.
  4. 2003/04, Jpn. J. Appl. Phys. Editorial Contribution Award, The Japan Society of Applied Physics
  5. 1987/02, Inoue Research Award for Young Scientists, Inoue Foundation for Science

External Funds

Acceptance Results of Competitive Funds

  1. 2021/04, 2024/03
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  2. Grants-in-Aid for Scientific Research, Formation of Self-Aligned Super-Atom-like Si-Ge based Quantum Dots and Characterization of Their Optical and Electrical Properties, 2015/05, 2019/03
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  3. 2015/04, 2016/03
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  4. Grants-in-Aid for Scientific Research, Alignment Control and Electrical Coupling of High-density Si-based Quantum Dots, 2012/04, 2015/03
    Permalink
  5. Grants-in-Aid for Scientific Research, Control of Electronic Properties of One-Dimensionally Self-Aligned Si-Ge based Quantum Dots and Its Electroluminescence, 2009/04, 2012/03
    Permalink
  6. Grants-in-Aid for Scientific Research, Technology Evolution for Silicon Nano-Electronics, 2006/04, 2011/03
    Permalink
  7. Grants-in-Aid for Scientific Research, Integration of silicon-based nano-scalestructure and its functional memory device application, 2006/04, 2010/03
    Permalink
  8. 2006/04, 2009/03
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  9. 2005/04, 2007/03
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  10. 2005/04, 2006/03
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  11. Grants-in-Aid for Scientific Research, Ultra-high Speed Global Interconnects for Inter-chip Communication, 2003/04, 2006/03
    Permalink
  12. Grants-in-Aid for Scientific Research, The fabrication of super atom structure using Si based self-assembled quantum dots and its electron state control, 2003/04, 2006/03
    Permalink
  13. Grants-in-Aid for Scientific Research, Control of Silicon quantum structures and its application to room-temperature device operation, 1998/04, 2001/03
    Permalink
  14. Grants-in-Aid for Scientific Research, Basic Research on Electronic Properties and Memory Effect of Silicon-Quantum-Dot Array and Its Application to Memory Device, 1998/04, 2000/03
    Permalink
  15. 1997/04, 1998/03
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Social Activities

History as Committee Members

  1. Editorial Board Member, 2020/07, 9999, Nanomaterials, Editorial Board Member
  2. Ed. Board Member, 2003, 9999, e-Journal of Surf. Sci. and Nanotechnology, Ed. Board Member(2003－)
  3. International Advisory Committee, 2022, 2022, The 9th International Symposium on Control of Semiconductor Interfaces (ISCSI-IX, September 5-8, 2022, Nagoya University, Japan)
  4. Ed. Member, 2014, 2020, ECS Trans. Vol. 98, No. 5 (2020), Vol. 85, No.16 (2018), Vol.75, No.8 (2016), Vol.64, No. 6 (2014), Ed. Member
  5. Special Section on Fundamental and Applicationof Advanced Semiconductor Devices, Ed. Commitee Member, 2006, 2019, IEICE Trans. on Electronics; E102-C, No. 6 (2019), E101-C, No. 5 (2018), E100-C, No. 5 (2017), E99-C, No. 5 (2016), E98-C, No. 5 (2015), E97-C, No. 5 (2014), E96-C, No. 5 (2013), E95-C, No.5 (2012), E94-C, No.5 (2011), E93-C, No.5 (2010), E92-C, No.5 (2009), E91-C, No.5 (2008), E90-C, No.5 (2007), E89-C, No.5 (2006): Special Section on Fundamental and Applicationof Advanced Semiconductor Devices, Ed. Commitee Member
  6. Managing Gest Editor, 2014, 2014, Thin Solid Films, Vol 557, 30 (2014), Managing Gest Editor
  7. Guest Editor (Head of Guest Editors), 2012, 2012, J. Non-Cryst. Solids, Vol.358, Issue 17 (2012) : Special Issue for Proc. of the 24th Int. Conf. on Amorphous and Nanocrystalline Semiconductors (ICANS 24) Guest Editor (Head of Guest Editors)
  8. Editor, 2011, 2011, Key Engineering Materials, Vol.470 "Technology Evolution for Silicon Nano-Electronics", (2011) Editor
  9. Guest Editor, 2011, 2011, Jpn. J. Appl. Phys. 50, No.1 (2011): Selected Topics in Applied Physics: Technology Evolution for Silicon Nano-Electronics, Guest Editor
  10. Ed. Commitee Member, 2003, 2011, Jpn. J. Appl. Phys. 50, No.4B (2011), 49, No.4B (2010), 48, No.4B (2009), 47, No.4B (2008), 46. No.4B (2007), 45. No.4B (2006), 44. No.4B (2005), 43. No.4B(2004), 42. No.4B (2003): Special Issue for Int. Conf. on Solid State Devices and Material, Ed. Commitee Member
  11. Ed. Commitee Member, 2005, 2005, IEICE Trans. on Electronics: Special Issue 2005-4EC, Ed. Commitee Member
  12. Guest Editor, 2004, 2004, IEICE Trans. on Electronics E87-C, No.1 (2004): Special Section on High-k Gate Dielectrics, Guest Editor
  13. Assoc. Editor, 1998, 2002, Jpn. J. Appl. Phys. Assoc. Editor (1998 － 2002)
  14. Ed. Commitee Chairperson, 2001, 2001, Jpn. J. Appl. Phys. 40, No.4B (2001): Special Issue for 2000 Int. Conf. on Solid State Devices and Material, Ed. Commitee Chairperson