SHIN-ICHIRO KUROKI

Last Updated :2025/01/11

Affiliations, Positions
Research Institute for Nanodevices, Professor
Web Site
http://www.rnbs.hiroshima-u.ac.jp/index-e.html
E-mail
skurokihiroshima-u.ac.jp
Other Contact Details
1-4-2 Kagamiyama, Higashi-Hiroshima, Japan
TEL : (+81)82-424-6267 FAX : (+81)82-424-3499
Self-introduction
Our laboratory has been conducting research on Silicon-Carboide Harsh Environment Electronics and Silicon Thin-Film Transistors.

Basic Information

Major Professional Backgrounds

  • 2002/04/01, 2005/03/31, Hiroshima University, Research Center for Nanodevices and Systems, Researcher
  • 2005/04/01, 2007/03/31, Tohoku University, Graduate School of Engineering, Assistant Professor
  • 2007/04/01, 2012/03/31, Tohoku University, Graduate School of Engineering, Assistant Professor
  • 2013/10, 2014/01, KTH Royal Institute of Technology, Visiting Researcher
  • 2012/04/01, 2019/02/28, Hiroshima University, Research Institute for Nanodevice and Bio Systems, Associate Professor
  • 2016/06, 2017/02, KTH Royal Institute of Technology, Visiting Researcher
  • 2019/03/01, Hiroshima University, Research Institute for Nanodevice and Bio Systems, Professor
  • 2019/04/01, Research Institute for Nanodevice and Bio Systems, Vice Director
  • 2019/04/01, Graduate School of Advanced Sciences of Matter, Hiroshima University, Vice Director
  • 2019/04/01, Nanotechnology Platform Program of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan, Hiroshima University Director
  • 2021/04/01, MEXT ARIM Japan, Director of HU division

Educational Backgrounds

  • Hiroshima University, Graduate School, Division of Natural Science, Department of Physics, Japan, 1999/04, 2002/03

Academic Degrees

  • Ph.D., Hiroshima University
  • Master of Science, Hiroshima University

Educational Activity

  • [Bachelor Degree Program] School of Engineering : Cluster 2(Electrical, Electronic and Systems Engineering) : Program of Electronic Devices and Systems
  • [Master's Program] Graduate School of Advanced Science and Engineering : Division of Advanced Science and Engineering : Quantum Matter Program
  • [Doctoral Program] Graduate School of Advanced Science and Engineering : Division of Advanced Science and Engineering : Quantum Matter Program

In Charge of Primary Major Programs

  • Electronic Devices and Systems
  • Information Engineering

Research Fields

  • Engineering;Electrical and electronic engineering;Electron device / Electronic equipment

Research Keywords

  • Silicon Carbide Integrated Circuits and Devices/ Silicon Carbide Power Semiconductor Devices and Module / Silicon Thin Film Transistor / Nephron Chip / Harsh Environments Electronics

Affiliated Academic Societies

  • The Japan Society of Applied Physics
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  • IEEE Institute of Electrical and Electronics Engineers/ Electron Devices Society
    Related URL
  • The Electrochemical Society (ECS)
    Related URL

Educational Activity

Course in Charge

  1. 2024, Undergraduate Education, 1Term, Logic System Design
  2. 2024, Undergraduate Education, Year, Graduation Thesis
  3. 2024, Graduate Education (Master's Program) , First Semester, Seminar on Electronics A
  4. 2024, Graduate Education (Master's Program) , Second Semester, Seminar on Electronics B
  5. 2024, Graduate Education (Master's Program) , Academic Year, Academic Presentation in Electronics
  6. 2024, Graduate Education (Master's Program) , 1Term, Exercises in Electronics A
  7. 2024, Graduate Education (Master's Program) , 2Term, Exercises in Electronics A
  8. 2024, Graduate Education (Master's Program) , 3Term, Exercises in Electronics B
  9. 2024, Graduate Education (Master's Program) , 4Term, Exercises in Electronics B
  10. 2024, Graduate Education (Master's Program) , 1Term, LSI Devices and Process Engineering
  11. 2024, Graduate Education (Master's Program) , 1Term, Introduction of the Electronics
  12. 2024, Graduate Education (Master's Program) , Academic Year, Advanced Study in Quantum Matter
  13. 2024, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Quantum Matter
  14. 2024, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Quantum Matter

Research Activities

Academic Papers

  1. ★, 4H-SiC Radiation Hardened Static Random Access Memory, IEEE Electron Device Letter, 45(12), 2280-2283, 20240923
    Link to Paper Search Results by DOI
  2. ★, 4H-SiC 64 pixels CMOS image sensors with 3T/4T-APS arrays, APPLIED PHYSICS EXPRESS, 17(8), 20240801
    Link to Paper Search Results by DOI
  3. Thermal stability of TiN gate electrode for 4H-SiC MOSFETs and integrated circuits, JAPANESE JOURNAL OF APPLIED PHYSICS, 63(8), 20240801
    Link to Paper Search Results by DOI
  4. Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model, JAPANESE JOURNAL OF APPLIED PHYSICS, 63(1), 20240101
    Link to Paper Search Results by DOI
  5. Influence of Gate Depletion Layer Width on Radiation Resistance of Silicon Carbide Junction Field-Effect Transistors, Quantum Beam Sci., 7(31), 1-10, 20231011
    Link to Paper Search Results by DOI
  6. Integrated Fabrication Process of Si Microcantilever Using TMAH Solution With Planar Mask, JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 32(3), 290-296, 202306
    Link to Paper Search Results by DOI
  7. Flexible and compact perspiration-monitoring system with 0.18 mu m BCD process and PDMS micro air-flow path, JAPANESE JOURNAL OF APPLIED PHYSICS, 62(SC), 20230401
    Link to Paper Search Results by DOI
  8. Nanowire single-crystal grain and single grain boundary silicon field effect transistors for direct electrical characterization of grain boundaries, Applied Physics Express, 16, 025502-1-025502-4, 20230209
    Link to Paper Search Results by DOI
  9. Integrated 4H-SiC Photosensors With Active Pixel Sensor-Type Circuits for MGy-Class Radiation Hardened CMOS UV Image Sensor, IEEE Electron Device Letters, 44(1), 100-103, 20221202
    Link to Paper Search Results by DOI
  10. Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors, IEEE ELECTRON DEVICE LETTERS, 43(10), 1713-1716, 202210
    Link to Paper Search Results by DOI
  11. Amplifier Based on 4H-SiC MOSFET Operation at 500 degrees C for Harsh Environment Applications, IEEE TRANSACTIONS ON ELECTRON DEVICES, 69(8), 4194-4199, 202208
    Link to Paper Search Results by DOI
  12. Threshold voltage instability and hysteresis in gamma-rays irradiated 4H-SiC junction field effect transistors, JOURNAL OF APPLIED PHYSICS, 131(24), 20220628
    Link to Paper Search Results by DOI
  13. Growth of vanadium doped semi-insulating 4H-SiC epilayer with ultrahigh-resistivity, JOURNAL OF APPLIED PHYSICS, 131(24), 20220628
    Link to Paper Search Results by DOI
  14. Observation of Metal-free Phthalocyanine Adsorbed on SiC Reconstructed Surface, E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 20, 257-260, 20220804
    Link to Paper Search Results by DOI
  15. 500 degrees C high-temperature reliability of Ni/Nb ohmic contact on n-type 4H-SiC, JAPANESE JOURNAL OF APPLIED PHYSICS, 61(3), 20220301
    Link to Paper Search Results by DOI
  16. Characterization of Continuous-Wave Laser Crystallized Silicon Thin Films with Hole-Patterns, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 11(5), 20220501
    Link to Paper Search Results by DOI
  17. Output Characteristics of 4H-SiC Pixel Devices for Radiation Hardened UV CMOS Image Sensors, European Conference on Silicon Carbide and Related Materials 2021, Th-2A-02, 20211028
  18. Output Characteristics of SOI-Si/4H-SiC Hybrid Pixel Device for Radiation Hardend CMOS Image Sensors, European Conference on Silicon Carbide and Related Materials 2021, We-P-29, 20211027
  19. Effects of MOS charges on roll-off characteristics of 4H-SiC short channel n/p MOSFETs, European Conference on Silicon Carbide and Related Materials 2021, We-P-08, 20211027
  20. Coverage Enhancement of Si-SOI/4H-SiC Wafer Direct Bonding by SiO2 insertion, European Conference on Silicon Carbide and Related Materials 2021, Th-P-65, 20211026
  21. High-Selective Deep RIE of 4H-SiC with SiO2 Hard Mask in Cl2/HBr/O2 Plasma Chemistry, European Conference on Silicon Carbide and Related Materials 2021, Th-P-64, 20211026
  22. Thickness dependencies of SiO2/BaOx layers on interfacial properties of a layered gate dielectric on 4H-SiC, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 121, 202101
    Link to Paper Search Results by DOI
  23. High-temperature reliability of integrated circuit based on 4H-SiC MOSFET with Ni/Nb ohmic contacts for harsh environment applications, JAPANESE JOURNAL OF APPLIED PHYSICS, 59(12), 20201201
  24. Characterization of selectively oriented polycrystalline silicon thin films formed by multiline beam continuous-wave laser lateral crystallization with overlapping, JAPANESE JOURNAL OF APPLIED PHYSICS, 59(11), 20201101
  25. Thickness dependencies of SiO2/BaOx layers on interfacial properties of a layered gate dielectric on 4H-SiC, Materials Science in Semiconductor Processing, 121(2021), 105343-1-105343-6, 20200825
    Link to Paper Search Results by DOI
  26. CF4:O-2 surface etching for the improvement of contact resistance and high-temperature reliability in Ni/Nb ohmic contacts on n-type 4H-SiC, JAPANESE JOURNAL OF APPLIED PHYSICS, 59(5), 20200501
  27. CF4:O2 surface etching for the improvement of contact resistance and high-temperature reliability in Ni/Nb ohmic contacts on n-type 4H-SiC, Japanese Journal of Applied Physics, 59, 056501-1-056501-6, 20200429
    Link to Paper Search Results by DOI
  28. Effect of TMCTS silylation treatments on crosslinking density of low-k zeolite porous silica film, JAPANESE JOURNAL OF APPLIED PHYSICS, 58(2), 201902
    Link to Paper Search Results by DOI
  29. Thickness Dependences on Interfacial Properties of SiO2/BaO2 layers on 4H-SiC (0001), 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII), WP2-12, 20191127
  30. Influence of Ni and Nb thickness on low specific contact resistance and high-temperature reliability of ohmic contacts to 4H-SiC, JAPANESE JOURNAL OF APPLIED PHYSICS, 58(11), 20191101
    Link to Paper Search Results by DOI
  31. Radiation hardness of 4H-SiC JFETs in MGy dose ranges, The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019), Th.P.43, 20190929
  32. Pixel Array Integration with SOI-Si photodiode and 4H-SiC MOSFETs for Radiation-Hardened image sensors, The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019), Th.P.30, 20190929
  33. Suppression of Ion Channeling Effects in 4H-SiC Substrate by Tilt Angle Control of Ion Implantation, The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019), MO.P.33, 20190929
  34. High Temperature Reliability of 4H-SiC Devices and Single Stage 4H-SiC MOSFET Amplifier at 400ºC, The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019), MO.P.33, 2019
  35. 4H-SiC Pixel Device with UV Photodiode and MOSFETs for Radiation-Hardened UV Image Sensors, International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019), TH.P.44, 20190929
  36. Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer, JAPANESE JOURNAL OF APPLIED PHYSICS, 58(8), 20190801
    Link to Paper Search Results by DOI
  37. Characterization of Ba-Introduced Thin Gate Oxide on 4H-SiC, Mat. Sci. Forum, 963, 451-455, 20190719
    Link to Paper Search Results by DOI
  38. Optimization of Ni/Nb Ratio for High-Temperature-Reliable Ni/Nb Silicide Ohmic Contact on 4H-SiC, Mat. Sci. Forum, 963, 498-501, 20190719
    Link to Paper Search Results by DOI
  39. Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs, Mat. Sci. Forum, 963, 613-616, 20190719
    Link to Paper Search Results by DOI
  40. Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors, Mat. Sci. Forum, 963, 726-729, 20190719
    Link to Paper Search Results by DOI
  41. 4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters, Mat. Sci. Forum, 963, 837-840, 20190719
    Link to Paper Search Results by DOI
  42. Dependence of thin film transistor characteristics on low-angle grain boundaries of (100)-oriented polycrystalline silicon thin films, JAPANESE JOURNAL OF APPLIED PHYSICS, 58(SB), 20190401
    Link to Paper Search Results by DOI
  43. High-temperature reliability of Ni/Nb ohmic contacts on 4H-SiC for harsh environment applications, THIN SOLID FILMS, 669, 306-314, 20190101
    Link to Paper Search Results by DOI
  44. Ni and Nb thickness dependence on low specific contact resistance and high-temperature reliability of ohmic contact to 4H-SiC, Jpn. J. Appl. Phys., 58, 2019
  45. Effect of Low Angle Grain Boundaries on Electron and Hole Mobility, Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials, 1257-1258, 20180909
  46. Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs, 12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018), MO-P-MO7, 20180902
  47. Characterization of Ba-introduced thin gate oxide on 4H-SiC, 12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018), TU-P-SO6, 20180902
  48. Hybrid Pixel Devices with SOI-Si photodiode and 4H-SiC MOSFETs for Radiation-Hardened Image Sensors, 12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018), TU-P-RQ11, 20180902
  49. Effects of High Gamma-Ray Radiation on 3C-SiC nMOSFETs, 12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018), TU-P-RQ10, 20180902
  50. Optimization of Ni/Nb Ratio for High-Temperature-Reliable Ni/Nb Silicide Ohmic Contact on 4H-SiC, 12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018), WE-P-CO3, 20180902
  51. 4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters, 12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018), TH-01-05, 20180902
  52. Electrical properties of Ti-Si-C Ohmic contact on ion-implanted n-type 4H-SiC C face, Mat. Sci. Forum, 924, 409-412, 20180605
    Link to Paper Search Results by DOI
  53. Correlation between Field Effect Mobility and Accumulation Conductance at 4H-SiC MOS Interface with Barium, Mat. Sci. Forum, 924, 477-481, 20180605
    Link to Paper Search Results by DOI
  54. Effects of CF4 surface etching on 4H-SiC MOS Capacitors, Mat. Sci. Forum, 924, 465-468, 20180605
    Link to Paper Search Results by DOI
  55. 4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts, Mat. Sci. Forum, 924, 423-427, 20180605
    Link to Paper Search Results by DOI
  56. Low-parasitic-capacitance self-aligned 4H-SiC nMOSFETs for harsh environment electronics, Mat. Sci. Forum, 924, 971-974, 20180605
    Link to Paper Search Results by DOI
  57. Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors, 12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018), TU-P-RQ7, 20160902
  58. Crystal orientation control with a continuous-wave laserfor ultra-high mobility silicon thin film transistors, OYO BUTURI, 87(6), 421-425, 201806
  59. Formation of (100)-oriented large polycrystalline silicon thin films with multiline beam continuous-wave laser lateral crystallization, JAPANESE JOURNAL OF APPLIED PHYSICS, 57(3), 201803
    Link to Paper Search Results by DOI
  60. Low-k Mesoporous Pure Silica Zeolite Synthesis with the Centrifugation Process of a Zeolite Precursor, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 7(5), N67-N71, 2018
    Link to Paper Search Results by DOI
  61. Characterization of p-channel TFTs with (100)-oriented poly-Si thin film formed by multiline beam continuous-wave laser lateral crystallization, International Thin-Film Transistor Conference 2018 (ITC2018), 14, 2018
  62. Formation of epitaxial Ti-Si-C Ohmic contact on 4H-SiC C face using pulsed-laser annealing, APPLIED PHYSICS LETTERS, 110(25), 20170619
    Link to Paper Search Results by DOI
  63. Enhanced-Oxidation and Interface Modification on 4H-SiC(0001) Substrate Using Alkaline Earth Metal, Materials Science Forum, 897, 348-351, 20170515
    Link to Paper Search Results by DOI
  64. 4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics, Materials Science Forum, 897, 669-672, 20170515
    Link to Paper Search Results by DOI
  65. Low Resistance Ti-Si-C Ohmic Contacts for 4H-SiC Power Devices Using Laser Annealing, Mat. Sci. Forum, 897, 399-402, 20170515
    Link to Paper Search Results by DOI
  66. Transient observation of Peltier effect for PtSix-coated n-type silicon; cooler for 4H-SiC-based power devices, ECS Journal of Solid State Science and Technology, 6(3), N3089-N3094, 20170201
    Link to Paper Search Results by DOI
  67. Back-side Illuminated GeSn Photodiode Array on Quartz Substrate Fabricated by Laser-induced Liquid-phase Crystallization for Monolithically-integrated NIR Imager Chip, 2017 International Electron Devices Meeting (IEDM) Technical Digest, 393-396, 201712
  68. Peltier Effect of Silicon for Cooling 4H-SiC-based Power Devices, ECS Transaction, 80(5), 77-85, 201710
    Link to Paper Search Results by DOI
  69. Calculation of Seebeck Coefficients for Advanced Heat Transfer Modules, ECS Transaction, 80(5), 57-62, 201710
    Link to Paper Search Results by DOI
  70. Electrical properties of Ti-Si-C Ohmic contact on ion-implanted n-type 4H-SiC C face, The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017), Washington, D.C., USA, TU.CP.7-1-TU.CP.7-2, 201709
  71. Effects of CF4 surface etching on 4H-SiC MOS Capacitors, The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017), Washington, D.C., USA, WE.CP.9-1-WE.CP.9-2, 201709
  72. Correlation between field effect mobility and accumulation conductance at 4H-SiC MOS interface with barium, The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017), Washington, D.C., USA, TH.CP.2-1-TH.CP.2-2, 201709
  73. Low-parasitic-capacitance self-aligned 4H-SiC nMOSFETs for harsh environment electronics, The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017), Washington, D.C., USA, TH.CP.3-1-TH.CP.3-2, 201709
  74. 4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts, The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017), Washington, D.C., USA, WE.DP.4-1-WE.DP.4-2, 201709
  75. Ultrahigh-performance (100)-oriented polycrystalline silicon thin-film transistors and their microscopic crystal structures, APPLIED PHYSICS EXPRESS, 10(5), 201705
    Link to Paper Search Results by DOI
  76. High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits, IEEE Transactions on Nuclear Science, 64(2), 852-858, 201702
    Link to Paper Search Results by DOI
  77. Formation of amorphous alloys on 4H-SiC with NbNi film using pulsed-laser annealing, Applied Physics Letters, 109, 012101-1-012101-5, 20160707
    Link to Paper Search Results by DOI
  78. Characterization of Grapho-Silicidation on n+ 4H-SiC C-Face for Back Side Ohmic Contacts of Power Devices, ECS Journal of Solid State Science and Technology, 5(9), P457-P460, 20160706
    Link to Paper Search Results by DOI
  79. Characterization of (100)-Dominantly Oriented Poly-Si Thin Film Transistors using Multi-Line Beam Continuous-Wave Laser Lateral Crystallization, ECS Transactions, 75(10), 49-54, 201610
  80. Characterization of (100)-Dominantly Oriented Poly-Si Thin Film Transistors using Multi-Line Beam Continuous-Wave Laser Lateral Crystallization, PRiME2016, 230th Meeting of ECS, Honolulu, USA, H03-2118-H03-2118, 201610
  81. Charge-Trap Inactivation of Multi-Line-Beam CLC poly-Si TFTs using Channel Impurity Doing, PRiME2016, 230th Meeting of ECS, Honolulu, USA, H03-2117-H03-2117, 201610
  82. 4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics, Abstract book of 11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016), Halkidiki, Greece, 537-538, 201609
  83. Enhanced-oxidation and interface modification on 4H-SiC(0001) substrate using alkaline earth metal, Abstract book of 11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016), Halkidiki, Greece, 557-558, 201609
  84. Low resistance Ti-Si-C ohmic contacts for 4H-SiC power devices using Laser annealing, Abstract book of 11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016), Halkidiki, Greece, 561-562, 201609
  85. Low resistance ohmic contact formation on 4H-SiC c-face with NbNi silicidation using nano-second laser annealing, Mat. Sci. Forum, 858, 549-552, 2016
  86. 4H-SiC nMOSFETs with As-doped S/D and NbNi Silicide ohmic contacts, Mat. Sci. Forum, 858, 573-576, 2016
  87. Characterization of 4H-SiC nMOSFETs in Harsh Environments, High-Temperature and High Gamma-Ray Radiation, Mat. Sci. Forum, 858, 864-867, 2016
  88. 3D Integration of Si-based Peltier device onto 4H-SiC power device, Mat. Sci. Forum, 858, 1107-1111, 2016
  89. 4H-SiC MOSFETs for power and harsh environment electronics, Annual World Congress of Smart Materials 2016-Develop New Path of Smartness, 381-381, 2016
  90. 4H-SiC MOSFETs and Logic Inverters for Radiation-Hardened Electronics, International Workshop on Radiation Resistant Sensors and Related Technologies for Nuclear Power Plant Decommissioning (R2SRT2016), 36-37, 2016
  91. Poly-Si TFTs with One-dimensionally Long Silicon Crystal Grains Using DLB Continuous-wave Laser Lateral Crystallization, iMiD 2015: The 15th International Meeting on Information Display, 250-250, 2015
  92. Characterization of 4H-SiC nMOSFETs in Harsh Environments; High Temperature and High Gamma-Ray Radiation, The International Conference on Silicon Carbide and Related Materials 2015(ICSCRM2015), We-P-60, 2015
  93. 4H-SiC nMOSFETs with As-doped S/D and NbNi silicide ohmic contacts, The International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM2015), Mo-P-26, 2015
  94. Low resistance ohmic contact formation on 4H-SiC c-face with NbNi silicidation using nano-second laser annealing, The International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM2015), Mo-P-21, 2015
  95. 3D Integration of Si-based Peltier device onto 4H-SiC power device, The International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM2015), Mo-P-32, 2015
  96. Characterization of 4H-SiC nMOSFETs with As-doped S/D and NbNi Silicide Contacts After High Gamma-Ray Radiation, Proceedings of The 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA2015), 117-118, 2015
  97. Fabrication of High-Performance Poly-Si TFTs with Highly Biaxially-Oriented Poly-Si Thin Films by Double-Line Beam Continuous-Wave Laser Lateral Crystallization, 114(1), 45-49, 20140410
  98. High performance Poly-Si TFTs with Highly Bi-axially Oriented Poly-Si Thin Films Using DLB Continuous-wave Laser Lateral Crystallization, Jpn. J. Appl. Phys, 53, 03CC02 -1-03CC02 -4, 2014
  99. Low resistance Ohmic Contact Formation of Ni Silicide on Partially Si Ion Implanted n+ 4H-SiC, Mat. Sci. Forum, 778-780, 689-692, 2014
  100. Complex permittivities of breast tumor tissues obtained from cancer surgeries, Appl. Phys. Lett., 104, 253702-253702, 2014
  101. Phosphorous ion implantation into NiGe layer for Ohmic contact formation on n-type Ge,, Jpn. J. Appl. Phys, 53, 08LD01-1-3 08LD01-5 , 2014
  102. Characteristics of Poly-Si Thin Film Transistors with Highly Biaxially Oriented Linearly Arranged Poly-Si Thin Films Using Double Line Beam Continuous-Wave Laser Lateral Crystallization, ECS Transactions, 64(10), 39-44, 2014
  103. Characterization of Poly-Si TFTs with Highly Bi-Axially Oriented Poly-Si Thin Films Using DLB Continuous-Wave Laser Lateral Crystallization, 2014 MRS Spring Meeting, A17.06, San Francisco, April 25 , 2014
  104. Leakage Current Reduction of 4H-SiC Schottky Barrier Diode by Using Sacrificial Oxidation, 2014 MRS Spring Meeting, DD6.05, San Francisco, April 23 , 2014
  105. Effect of ozone radical treatment for high-performance poly-Si TFTs, The proceedings of The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD14, 189-192, 2014
  106. Characteristics of Poly-Si Thin Film Transistors with Highly Biaxially Oriented Linearly Arranged Poly-Si Thin Films Using Double Line Beam Continuous-Wave Laser Lateral Crystallization, 226th Meeting of The Electrochemical Society, Q10 Thin Film Transistor 12 (TFT12), 1906, Cancun, Mexico, October 6 , 2014
  107. Area Expansion of Crystallized Si Films on YSZ Layers by Two-step Method in PLA, Proceedings of IDW'14, AMD8-2L, 259-260, 2014
  108. Low-k Mesoporous Pure Silica Zeolite with High Elastic Modulus Using 1,3,5,7-Tetra-Methyl-Cyclo-Tetra-Siloxane and Ultraviolet Treatments, ECS J. Solid State Sci. Technol, 2(4), N89-N92, 2013
  109. High performance poly-Si Thin Film Transistor with One-dimensionally Long Si Grains Using DLB Continuous-wave Laser Lateral Crystallization, The proceedings of The Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices , AM-FPD13, 199-202, 2013
  110. Low-k Mesoporous Pure Silica Zeolite Synthesis with Centrifugation Process of Zeolite Precursor, Extended Abstracts of 2013 International Conference on Solid State Devices and Materials, 858-859, 2013
  111. Low Ohmic Contact Formation of Ni Silicide on Partially Si Ion Implanted n+ 4H-SiC, Technical digest of The International Conference on Silicon Carbide and Related Materials 2013, ICSCRM2013, Mo-P40-62, 2013
  112. Phosphorous Ion Implantation into NiGe Layer for Ohmic Contact Formation on n-Ge, 2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY, IWDTF13, 101-102, 2013
  113. Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow-k Dielectric Fluorocarbon on Advanced Cu Interconnects, Jpn J Appl Phys, 51(5), 05EC03-05EC03-6, 20120525
  114. In-Plane Grain Orientation Alignment of Polycrystalline Silicon Films by Normal and Oblique-Angle Ion Implantations, Jpn J Appl Phys, 51(4), 04DH03-04DH03-4, 20120425
  115. Formation of Biaxially-Oriented Poly-Si Thin Films by Double-Line Beam Continuous-Wave Laser Lateral Crystallization for High-Performance TFT, 112(18), 27-32, 20120420
  116. Formation of Biaxially-Oriented Poly-Si Thin Films by Double-Line Beam Continuous-Wave Laser Lateral Crystallization for High-Performance TFT, 112(19), 27-32, 20120420
  117. Formation of Biaxially-Oriented Poly-Si Thin Films by Double-Line Beam Continuous-Wave Laser Lateral Crystallization for High-Performance TFT, Technical report of IEICE. SDM, 112(18), 27-32, 20120420
  118. Tri-Gate Polycrystalline Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization with Improved Electron Transport Properties, Jpn J Appl Phys, 51(2), 02BJ03-02BJ03-6, 20120225
  119. Tri-Gate Polycrystalline Silicon Thin Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization for Improvement of Electron Transport Properties, Jpn. J. Appl. Phys., 51, 02BJ03-1-02BJ03-6, 2012
  120. In-Plane Grain Orientation Alignment of Polycrystalline Si Films by Normal and Oblique-Angle Ion-Implantations, Jpn. J. Appl. Phys., 51(4), 04DH03-1-04DH03-4, 2012
  121. Cu Single Damascene Integration of an Organic Nonporous Ultralow-k Fluorocarbon Dielectric Deposited by Microwave-Excited Plasma-Enhanced CVD, IEEE Trans. Electron Devices, 59(5), 1445-1453, 2012
  122. Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow-k Dielectric Fluorocarbon on Advanced Cu Interconnects, Jpn. J. Appl. Phys., 51, 05EC03-1-05EC03-6, 2012
  123. A novel chemically, thermally and electrically robust Cu interconnect structure with an organic non-porous ultralow-k dielectric fluorocarbon (k=2.2), Proceeding of 2012 IEEE Symposium on VLSI Technology, 119-120, 2012
  124. Layered Low-k Porous Silica Zeolite Films for Inter-Metal Dielectrics with High Elastic Modulus, Extended Abstracts of 2012 International Conference on Solid State Devices and Materials, 58-59, 2012
  125. Electrical Characteristics of Novel Non-porous Low-$k$ Dielectric Fluorocarbon on Cu Interconnects for 22 nm Generation and Beyond, Jpn J Appl Phys, 50(5), 05EB02-05EB02-5, 20110525
  126. Strain-Induced Back Channel Electron Mobility Enhancement in Polycrystalline Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization, Jpn J Appl Phys, 50(4), 04DH10-04DH10-5, 20110425
  127. Strain-induced back channel electron mobility enhancement in polycrystalline silicon thin-film transistors fabricated by continuous-wave laser lateral crystallization (Special issue: Solid state devices and materials), Japanese journal of applied physics, 50(4), 04DH10-1〜5, 201104
  128. Advanced Direct-polish Process on Organic Non-Porous Ultra Low-k Fluorocarbon Dielectric on Cu Interconnects, ECS Transactions, 34(1), 653-658, 2011
  129. Strain-Induced Back Channel Electron Mobility Enhancement in Polycrystalline Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization, Jpn. J. Appl. Phys., 50, 04DH10-1-04DH10-5 , 2011
  130. Electrical Characteristics of Novel Non-porous Low-k Dielectric Fluorocarbon on Cu Interconnects for 22nm Generation and Beyond, Jpn. J. Appl. Phys., 50, 05EB02-1-05EB02-5, 2011
  131. Seed-Free Fabrication of Highly Bi-Axially Oriented Poly-Si Thin Films by Continuous-Wave Laser Crystallization with Double-Line Beams, J. Electrochem. Soc., 158(9), H924-H930, 2011
  132. Carrier transport and its variation of laser-lateral-crystallized Poly-Si TFTs, Electron. Lett., 47(24), 1336-1338, 2011
  133. Bi-Axially Orientation-Controlled Si Thin Films on Glass Substrates by Double-Line-Beam CW Laser Annealing, Conference Proceedings of EUROSOI 2011, VII Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits, 51-52, 2011
  134. Cu damascene Interconnects with an Organic Low-k Fluorocarbon Dielectric Deposited by Microwave Excited Plasma Enhanced CVD, IEEE International Interconnect Technology Conference 2011, 82-82, 2011
  135. Crystal Growth of Highly Biaxially-Oriented Poly-Si Thin Films by W-Line Beam Continuous-Wave Laser Lateral Crystallization, The proceedings of The Eighteenth International Workshop on Active-Matrix Flatpanel Displays and Devices , AM-FPD11, 215-216, 2011
  136. Alignment of In-plane Crystallographic Grain Orientations in Polycrystalline Si Films by Normal and Oblique-Angle Ion-Implantations, Extended Abstracts of 2011 International Conference on Solid State Devices and Materials, 300-301, 2011
  137. Tri-Gate Poly-Si TFTs Fabricated by CW Laser Lateral Crystallization for Improvement of Electron Transport Properties, Extended Abstracts of 2011 International Conference on Solid State Devices and Materials, 1215-1216, 2011
  138. Highly Reliable and Drivability-Enhanced MOS Transistors with Rounded Nanograting Channels, IEICE Trans. Electron., 93(11), 1638-1644, 20101101
  139. Evaluation of Internal Strain and Electron Mobility in poly-Si TFTs Formed by CW Laser Lateral Crystallization, Technical report of IEICE. SDM, 110(241), 41-44, 20101014
  140. Fabrication of Highly Crystalline-Oriented Poly-Si Thin Films by using Double-Line-Beam CLC for High Performance LPTS-TFT, Technical report of IEICE. SDM, 110(241), 45-48, 20101014
  141. Integration of Novel Non-porous Low-k Dielectric Fluorocarbon into Advanced Cu Interconnects, Technical report of IEICE. SDM, 110(241), 53-56, 20101014
  142. Ferroelectric Properties of Lead Zirconate Titanate Thin Film on Glass Substrate Crystallized by Continuous-Wave Green Laser Annealing, Jpn J Appl Phys, 49(4), 04DH14-04DH14-4, 20100425
  143. Enhancement of Current Drivability of Nanograting Polycrystalline Silicon Thin-Film Transistors, Jpn J Appl Phys, 49(4), 04DJ11-04DJ11-5, 20100425
  144. Tribological Study of Direct-polish Process on Non-porous Ultra Low-k Dielectric / Cu Interconnects, Proceedings of JSPE Semestrial Meeting, 2010(0), 133-134, 2010
  145. Tribological Study of Direct-polish Process on Non-porous Ultra Low-k Dielectric / Cu Interconnects, Proceedings of JSPE Semestrial Meeting, 2010(0), 133-134, 2010
  146. Ferroelectric Properties of Lead Zirconate Titanate Thin Film on Glass Substrate Crystallized by Continuous-Wave Green Laser Annealing, Jpn. J. Appl. Phys, 49, 04DH14-1-04DH14-4 , 2010
  147. Enhancement of Current Drivability of Nanograting Polycrystalline Silicon Thin-Film Transistors, Jpn. J. Appl. Phys, 49, 04DJ11-1-04DJ11-5, 2010
  148. Highly Reliable and Drivability-Enhanced MOS Transistors with Rounded Nanograting Channels, IEICE Transactions on Electronics, E93-C(11), 1638-1644, 2010
  149. One-dimensionally Long Silicon Grain Formation by Continuous-Wave Green Laser and Its Applications, THE PROCEEDINGS OF THE 6th INTERNATIONAL THIN-FILM TRANSISTOR CONFERENCE, 28-31, 2010
  150. Strain-Induced Back Channel Electron Mobility Enhancement in Poly-Si TFTs Formed by Continuous-Wave Laser Lateral Crystallization, Extended Abstracts of 2010 International Conference on Solid State Devices and Materials, 1307-1308, 2010
  151. Electrical Characteristics of Novel Non-porous Low-k Dielectric Fluorocarbon on Cu Interconnects for 22 nm Generation and Beyond, Advanced Metalization Conference 2010: 20 th Asian Session, 54-55, 2010
  152. Development of Direct-polish Process on Non-porous Ultra Low-k Dielectric/Cu Interconnects for 22nm Generation and Beyond, 2010 International Conference on Planarization/CMP Technology, 51-54, 2010
  153. Current Voltage Characteristics of Si-MESFET on SOI Substrate, Technical report of IEICE. SDM, 109(257), 27-30, 20091022
  154. Crystallization of Amorphous Silicon Film on Glass Substrate by Heated Gas Beam Annealing, Technical report of IEICE. SDM, 109(257), 47-50, 20091022
  155. Roughness Reduction in Polycrystalline Silicon Thin Films Formed by Continuous-Wave Laser Lateral Crystallization with Cap SiO2 Thin Films, Jpn J Appl Phys, 48(4), 04C129-04C129-4, 20090425
  156. Low-Temperature Recrystallization of Ferroelectric Lead Zirconate Titanate Thin Films on Glass Substrate Using Continuous-Wave Green Laser, Jpn J Appl Phys, 48(4), 04C142-04C142-4, 20090425
  157. Roughness Reduction in Polycrystalline Silicon Thin Films Formed by Continuous-Wave Laser Lateral Crystallization with Cap SiO2 Thin Films, Jpn. J. Appl. Phys., 48, 04C129-1-04C129-4, 2009
  158. Low-Temperature Recrystallization of Ferroelectric Lead Zirconate Titanate Thin Films on Glass Substrate Using Continuous-Wave Green Laser, Jpn. J. Appl. Phys, 48, 04C142-1-04C142-4, 2009
  159. Research on High Performance Poly-Si TFTs with One-dimensionally long grain and reduced surface roughness, Proceedings of SOIM-GCOE08, 207-207, 2009
  160. Ion-Implanted Boron Activation in a Preamorphized Si Layer by Microwave Annealing, Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, 330-331, 2009
  161. Highly-(001)-Oriented Ferroelectric PZT Thin Films on Glass by CW Green-Laser Crystallization, Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, 885-886, 2009
  162. Continuous Manipulation of Micro Particles by Use of Asymmetric Electrodes Array, Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, 673-674, 2009
  163. The Drivability Enhancement of Poly-Si TFTs by use of Nanograting Substrate, Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, 581-582, 2009
  164. Planarization of CW laser crystallized Si thin films by chemical mechanical polishing using slurry with ethyl alcohol, Technical report of IEICE. SDM, 108(236), 13-15, 20081002
  165. C-10-24 Current Voltage Characteristics of Scaled n-type SOI-MESFETs, Proceedings of the Society Conference of IEICE, 2008(2), 20080902
  166. Analysis of Continuous-Wave Laser Lateral Crystallized Polycrystalline Silicon Thin Films with Large Tensile Strain, Jpn J Appl Phys, 47(4), 3046-3049, 20080425
  167. Analysis of Drivability Enhancement Factors in Nanograting Metal–Oxide–Semiconductor Field-Effect Transistors, Jpn J Appl Phys, 47(4), 3081-3085, 20080425
  168. Analysis of Continuous-Wave Laser Lateral Crystallized Polycrystalline Silicon Thin Films with Large Tensile Strain, Jpn J Appl Phys, 47(4), 3046-3049, 20080425
  169. Analysis of Continuous-Wave Laser Lateral Crystallized Polycrystalline Silicon Thin Films with Large Tensile Strain, Jpn. J. Appl. Phys., 47, 3046-3049, 2008
  170. Analysis of Drivability Enhancement Factors in Nanograting Metal-Oxide-Semiconductor Field-Effect Transistors, Jpn. J. Appl. Phys, 47, 3081-3085, 2008
  171. Crystallinity and Internal Strain of One-Dimensionally Long Si Grains by CW Laser Lateral Crystallization, ECS Transactions, 16(9), 145-151, 2008
  172. Morphology Control of Ferroelectric PZT Thin Films Crystallized On Glass with Continuous-Wave Green Laser, Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 140-141, 2008
  173. Roughness Reduction Technique for High Performance Poly-Si TFTs by CW Laser Lateral Crystallization with Cap SiO2 Thin Films, Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 140-141, 2008
  174. Carrier Transport Mechanism in Poly-Si TFTs with One-Dimensionally Long Grains, Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 766-767, 2008
  175. Crystallinity and Internal Strain of One-Dimensionally Long Si Grains by CW Laser Lateral Crystallization, 214th ECS Meeting, E13, 2276-2276, 2008
  176. Research on Poly-Si TFTs with One-dimensionally long grains formed by CW laser lateral crystallization, Proceedings of SOIM-GCOE08, 59-60, 2008
  177. Influence of strain effects on characteristics of nanograting channel MOSFET, Proceedings of SOIM-GCOE08, 216-216, 2008
  178. Modulation of Dielectric Constant on Mechanically Strained SrTiO_3 MIM Capacitor, Technical report of IEICE. SDM, 107(245), 23-24, 20070927
  179. The Drivability Enhancement Mechanisms in Nano-grating MOSFETs, 2007, 204-205, 20070919
  180. Lateral Recrystallized Si Thin Films with Large Tensile Strain for High Performance Thin Film Transistors, 2007, 566-567, 20070919
  181. Characteristics of Nano-Grating N-Channel MOSFETs for Improved Current Drivability(Semiconductor Materials and Devices), IEICE transactions on electronics, 90(9), 1830-1836, 20070901
  182. Enlargement of Crystal Grains in Thin Silicon Films by Continuous-Wave Laser Irradiation, Jpn J Appl Phys, 46(4), 2501-2504, 20070430
  183. Advantages of Nano-Grating Si Substrates in CMOS-FET Characteristics, ECS Transactions, 11(6), 467-472, 2007
  184. Self-seeding Crystallization of Silicon Thin Films Using Continuous-Wave Laser, ECS Transactions, 2(10), 71-75, 2007
  185. Nano-Grating Channel MOSFETs for Improved Current Drivability, ECS Transactions, 2(10), 83-89, 2007
  186. Enlargement of Crystal Grains in Thin Silicon Films by Continuous-Wave Laser Irradiation, Jpn. J. Appl. Phys., 46(4B), 2501-2504, 2007
  187. Characteristics of Nano-Grating N-Channel MOSFETs for Improved Current Drivability, IEICE TRANS. ELECTRON, E90-C(9), 1830-1836, 2007
  188. Permittivity Enhancement of Mechanically Strained SrTiO3 MIM Capacitor, ECS Transactions, 11(3), 293-299, 2007
  189. The Drivability Enhancement Mechanisms in Nano-grating MOSFETs, Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials, 204-205, 2007
  190. Lateral Recrystallized Si Thin Films with Large Tensile Strain for High Performance Thin Film Transistors, Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials, 566-567, 2007
  191. Permittivity Enhancement of Mechanically Strained SrTiO3 MIM Capacitor, 212th ECS Meeting, E3, 1101-1101, 2007
  192. Advantages of Nano-Grating Si Substrates in CMOS-FET Characteristics, 212th ECS Meeting, E9, 1322-1322, 2007
  193. Enlargement of Crystal-Grains in Thin Silicon Films Using Continuous-Wave Laser Irradiation, 2006, 696-697, 20060913
  194. Large Grain Growth of Silicon Thin Films by using CW Green Laser, 106(138), 119-122, 20060626
  195. Large Grain Growth of Silicon Thin Films by using CW Green Laser(Session 6A Silicon Devices III,AWAD2006), Technical report of IEICE. SDM, 106(138), 119-122, 20060626
  196. Crystallization Enhancement of Ferroelectric PZT Thin Films by using Continuous-Wave Laser(Session 9A Silicon Devices VI), Technical report of IEICE. SDM, 106(138), 277-280, 20060626
  197. Large Grain Growth of Silicon Thin Films by using CW Green Laser(Session 6A Silicon Devices III,AWAD2006), IEICE technical report. Electron devices, 106(137), 119-122, 20060626
  198. Crystallization Enhancement of Ferroelectric PZT Thin Films by using Continuous-Wave Laser(Session 9A Silicon Devices VI,AWAD2006), IEICE technical report. Electron devices, 106(137), 277-280, 20060626
  199. Large Grain Growth of Silicon Thin Films by using CW Green Laser, 106(138), 119-122, 20060626
  200. Large Grain Growth of Silicon Thin Films by using CW Green Laser(Session 6A Silicon Devices III,AWAD2006), Technical report of IEICE. SDM, 106(138), 119-122, 20060626
  201. Measurement and Analysis of Water Adsorption in Porous Silica Films, J. Electrochem. Soc., 153(8), G759-G764, 2006
  202. Large Grain Growth of Silicon Thin Films by using CW Green Laser, IEICE Technical Report, ED2006-79, SDM2006-87, 119-122, 2006
  203. Crystallization Enhancement of Ferroelectric PZT Thin Films, IEICE Technical Report, ED2006-112, SDM2006-120, 277-280, 2006
  204. Self-seeding Crystallization of Silicon Thin Films Using Continuous-Wave Laser, 209th Electrochem. Soc. Meeting, 354-354, 2006
  205. Drivability Enhancement of MOS Transistors Fabricated on Nano-grating Silicon Wafers, 209th Electrochem. Soc. Meeting, 360-360, 2006
  206. Large Grain Growth of Silicon Thin Films By using CW Green Laser, 2006 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 119-122, 2006
  207. Crystallization Enhancement of Ferroelectric PZT Thin Films by using Continuous-Wave Laser, 2006 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 277-280, 2006
  208. Enlargement of Crystal Grains in Thin Silicon Films by Continuous-Wave Laser Irradiation, Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, 696-697, 2006
  209. High-Density Microbubble Formation by Utilizing the Specific Additives for Chemical-less degreasing Process, Abstracts of MRS Meeting, A3, 65-65, 2006
  210. Characterization of Photosensitive Low-k Films Using Electron-Beam Lithography, J. Electrochem. Soc., 152(4), G281-G285, 2005
  211. Influence of Humidity on Electrical Characteristics of Self-Assembled Porous Silica Low-k Films, J. Electrochem. Soc., 152(7), G560-G566, 2005
  212. A Novel Photosensitive Porous Low-$k$ Interlayer Dielectric Film, Jpn J Appl Phys, 43(4), 1820-1824, 20040415
  213. A Novel Photosensitive Porous Low-$k$ Interlayer Dielectric Film, Jpn J Appl Phys, 43(4), 1820-1824, 20040415
  214. A Novel Photosensitive Porous Low-k Interlayer Dielectric Film, Japanese Journal of Applied Physics, 43(4), 1820-1824, 2004
  215. A Novel Photosensitive Porous Low-k Interlayer Dielectric Film, Jpn. J. Appl. Phys., 43(4B), 1820-1824, 2004
  216. Photosensitive Porous Low-k Interlayer Dielectric Film, Proceedings of SPIE, Optics East 2004: Sensors, Nanotechnologies and Application, 5592, 170-174, 2004
  217. Low-$k$ Dielectric Film Patterning by X-Ray Lithography, Jpn J Appl Phys, 42(4), 1907-1910, 20030415
  218. Low-k Dielectric Film Patterning by X-Ray Lithography, Japanese Journal of Applied Physics, 42(4), 1907-1910, 2003
  219. Low-k Dielectric Film Patterning by X-Ray Lithography, J. Appl. Phys., 42(4B), 1907-1910, 2003
  220. Characterization of Photosensitive Low-k Films using Electron-Beam Lithography, Abstract of the 2003 Material Research Society Spring Meeting, 127-127, 2003
  221. A Novel Photosensitive Porous Low-k Interlayer Dielectric Film, Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials, 468-469, 2003
  222. Influence of Humidity on Electrical Characteristics of Porous Silica Films, Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials, 478-479, 2003
  223. Noncommutative Deformation Invariant Quantum Field Theory, Soryushiron Kenkyu, 104(5), 20020220
  224. Calculation of the Pontrjagin class for U(1) instantons on non-commutative R4, J. High Energy Phys., 8, 28-28, 2002
  225. Direct Patterning of Low-k Dielectric Films using X-ray Lithography,, Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, 464-465, 2002
  226. The 't Hooft-Berknoff Equation and The Bilocal Auxiliary Field Method, Soryushiron Kenkyu, 103(5), E99-E100, 20010820
  227. Noncommutative Cohomological Field Theory and GMS Soliton, J. Math. Phys., 43, 872-896, 2001
  228. Elongated U(1) Instantons on Noncommutative R4, J. High Energy Phys., 11, 68-68, 2001
  229. MAG Topological Field Theory and Quark Confinement : review, Soryushiron Kenkyu, 98(6), F2-F3, 19990320

Invited Lecture, Oral Presentation, Poster Presentation

  1. 3MGy Gamma-ray radiation effects on 4H-SiC active pixel sensors, K. Hachimata, T. Meguro, A. Takeyama, T. Ohshima, K. Kojima, Y. Tanaka, and S.-I Kuroki, JSAP Advanced Power Semiconductors Division 11th Annual Meeting, 2024/11/24, Without Invitation, Japanese
  2. High-Temperature Operation of Gate Driver Circuits Based on 4H-SiC MOSFETs for High-Power Applications, Vuong Van Cuong, Tatsuya Meguro, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, and Shin-Ichiro Kuroki, JSAP Advanced Power Semiconductors Division 11th Annual Meeting, 2024/11/24, Without Invitation, Japanese
  3. SiC CMOS Active Pixel Sensors with Embedded UV Photodiode, K. Tanigawa, T. Meguro, A. Takeyama, T. Ohshima, K. Kojima, Y. Tanaka, and S.-I Kuroki, JSAP Advanced Power Semiconductors Division 11th Annual Meeting, 2024/11/24, Without Invitation, Japanese
  4. Fabrication of the planer SiC gate-all-around JFET, T.Amemiya, M.Yamamoto, H.Umezawa, K.Nakayama, T.Kuroiwa, S.Kuroki and Y.Tanaka, JSAP Advanced Power Semiconductors Division 11th Annual Meeting, 2024/11/24, Without Invitation, Japanese
  5. VTH Characterization of Wet-POA treated 4H-SiC p-MOSFET, S. Higashi, V.V. Cuong, S-I. Kuroki, JSAP Advanced Power Semiconductors Division 11th Annual Meeting, 2024/11/24, Without Invitation, Japanese
  6. Characterization of Ni and Ni/Nb ohmic contact microstructures on 4H-SiC, Nguyen Anh Dung, Vuong Van Cuong, Shin-Ichiro Kuroki, JSAP Advanced Power Semiconductors Division 11th Annual Meeting, 2024/11/24, Without Invitation, Japanese
  7. SiC CMOS Active Pixel Sensors with Embedded UV Photodiode, K. Tanigawa, T. Meguro, A. Takeyama, T. Ohshima, K. Kojima, Y. Tanaka, and S.-I Kuroki, International Conference on Silicon Carbide and Related Materials (ICSCRM2024), 2024/09/30, Without Invitation, English, Raleigh, NC, USA
  8. Fabrication of the planer SiC gate-all-around JFET with channel dose modulation, T.Amemiya, M.Yamamoto, H.Umezawa, K.Nakayama, T.Kuroiwa, Y.Tanaka and S.Kuroki, International Conference on Silicon Carbide and Related Materials (ICSCRM2024), 2024/09/30, Without Invitation, English, Raleigh, NC, USA
  9. Electrical Characteristics of N-Channel 4H-SiC MOSFET Under Positive-Bias Stress at 300degC Ambient, V. V. Cuong, S. Ishikawa, T. Maeda, H. Sezaki., and S.-I. Kuroki, International Conference on Silicon Carbide and Related Materials (ICSCRM2024), 2024/09/30, Without Invitation, English, Raleigh, NC, USA
  10. Switching Characteristics of Gate Driver Circuit Based on 4H-SiC MOSFETs at 500degC, V. V. Cuong, S. Ishikawa, T. Maeda, H. Sezaki., and S.-I. Kuroki, International Conference on Silicon Carbide and Related Materials (ICSCRM2024), 2024/09/30, Without Invitation, English, Raleigh, NC, USA
  11. Dependence of Gate Oxide Thickness on High-Temperature Characteristics of 4H-SiC MOSFET, V. V. Cuong, S. Ishikawa, T. Maeda, H. Sezaki., and S.-I. Kuroki, International Conference on Silicon Carbide and Related Materials (ICSCRM2024), 2024/09/30, Without Invitation, English, Raleigh, NC, USA
  12. Vth Reduction Characterization of Wet-POA treated 4H-SiC p MOSFET, S. Higashi, V.V. Cuong, S-I. Kuroki, International Conference on Silicon Carbide and Related Materials (ICSCRM2024), 2024/09/30, Without Invitation, English, Raleigh, NC, USA
  13. High-Temperature Reliability of Ni/Ti/Nb Ohmic Contact on p-type 4H-SiC, Ha Thi Vu, Vuong Van Cuong, Shin-Ichiro Kuroki, 2024 JSAP 85th Autumn Meeting, Without Invitation, English
  14. 500degC High-Temperature Characteristics of TiN-gate SiC n/p MOSFETs, Shion Hiramoto, V. Van Cuong, Seiji Ishikawa, Hiroshi Sezaki, Tomonori Maeda, and Shin-Ichiro Kuroki, International Conference on Silicon Carbide and Related Materials (ICSCRM 2023), 2023/09/21, Without Invitation, English, Sorrento, Italy
  15. Gamma-ray irradiation effects on 4H-SiC n/p MOSFETs with POA treatment, T. Ozaki, V. Van Cuong, A. Takeyama, T. Ohshima, K. Kojima, Y. Tanaka, and S-I. Kuroki, International Conference on Silicon Carbide and Related Materials (ICSCRM 2023), 2023/09/21, Without Invitation, English, Sorrento, Italy
  16. SiC Sample-and-Hold Circuit for SiC CMOS Image Sensors, T. Okamura, T. Meguro, A. Takeyama, T. Ohshima, Y. Tanaka, and S.-I. Kuroki, International Conference on Silicon Carbide and Related Materials (ICSCRM 2023), 2023/09/18, Without Invitation, English, Sorrento, Italy
  17. Radiation Dose Response of 4H-SiC UV Sensor for MGy-Class Radiation Hardened CMOS UV Imager, T. Meguro, M. Tsutsumi, A. Takeyama, T. Ohshima, Y. Tanaka,and S.-I. Kuroki, International Conference on Silicon Carbide and Related Materials (ICSCRM 2023), 2023/09/21, Without Invitation, English, Sorrento, Italy
  18. Extremely Temperature Characterization of Interface and Near-Interface Traps in 4H-SiC MOS Capacitor with Full-Distributed Circuit Model, Vuong Van Cuong, Kaho Koyanagi, Tatusya Meguro, Seiji Ishikawa, Hiroshi Sezaki, Tomonori Maeda, and Shin-Ichiro Kuroki, International Conference on Silicon Carbide and Related Materials (ICSCRM 2023), 2023/09/20, Without Invitation, English, Sorrento, Italy
  19. 500degC Operation of 4H-SiC SRAM, Shin-Ichiro Kuroki, T. Kai, K. Kojima, A. Takeyama, T. Ohshima, Y. Tanaka, International Conference on Silicon Carbide and Related Materials (ICSCRM 2023), 2023/09/18, Without Invitation, English, Sorrento, Italy
  20. Real-Time UV Imaging using 4H-SiC 64 Pixels CMOS Image Sensors, S.-I. Kuroki, M. Tsutsumi, T. Meguro, A. Takeyama, T. Ohshima, Y. Tanaka, and S.-I. Kuroki, International Conference on Silicon Carbide and Related Materials (ICSCRM 2023), 2023/09/18, Without Invitation, English, Sorrento, Italy
  21. (Invited) SiC CMOS Image Sensors and Integrated Circuits for Extreme Environment Applications, Shin-Ichiro Kuroki, Tatsuya Meguro, Vuong Van Cuong, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, Kazutoshi Kojima, and Yasunori Tanaka, 2023/09/01, With Invitation, Japanese, Advanced Power Semiconductors Division, Japan Society of Applied Physics, Tokyo
  22. (Invited) SiC CMOS Integrated Circuits and Image Sensors for Extreme Environment Applications, Shin-Ichiro Kuroki, Tatsuya Meguro, Vuong Van Cuong, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, Kazutoshi Kojima, and Yasunori Tanaka, The 4th International Workshop on Advanced Materials and Devices 2023 (IWAMD 2023), 2023/08/11, With Invitation, English, The 4th International Workshop on Advanced Materials and Devices 2023 (IWAMD 2023), Thai Nguyen, Vietnam
  23. (Invited) SiC CMOS Integrated Circuits and Image Sensors for Extreme Environment Applications, Shin-Ichiro Kuroki, Toya Kai, Masayuki Tsutsumi, Tatsuya Meguro, Vuong Van Cuong,Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, Kazutoshi Kojima, Yasunori Tanaka, IEEE Electron Devices Technology and Manufacturing Conference (IEEE EDTM 2023), 2023/03/10, With Invitation, English, IEEE Institute of Electrical and Electronics Engineers, Seoul, Korea
  24. Threshold voltage instability in gamma-rays irradiated 4H-SiC junction field effect transistors, Akinori Takeyama, Takahiro Makino, Yasunori Tanaka, Shin-Ichiro Kuroki, and Takeshi Ohshima, JSAP Advanced Power Semiconductor Division the 9th conference, 2022/12/20, Without Invitation, Japanese
  25. 2MGy radiation effects of 4H-SiC pixel devices, Masayuki Tsutsumi, Tatsuya Meguro, Akinori Takeyama, Takeshi Ohsima, Yasunori Tanaka, Shin-Ichiro Kuroki, JSAP Advanced Power Semiconductor Division the 9th conference, 2022/12/20, Without Invitation, Japanese
  26. Noise Margin Evaluation of 4H-SiC CMOS SRAM, Toya Kai, Kazutoshi Kojima, Takeshi Ohshima, Yasunori Tanaka, Shin-Ichiro Kuroki, JSAP Advanced Power Semiconductor Division the 9th conference, 2022/12/20, Without Invitation, Japanese, Advanced Power Semiconductor Division, The Japan Society of Applied Physics, Fukuoka
  27. 200degC operation of 4H-SiC CMOS UV image sensor's pixel devices, Masayuki Tsutsumi, Tatsuya Meguro, Akinori Takeyama, Takeshi Ohsima, Yasunori Tanaka, Shin-Ichiro Kuroki, 2022 JSAP autumn meeting, 2022/09/22, Without Invitation, Japanese, Sendai
  28. p/n channel operations of well-less MOSFETs with 4H-SiC Semi-Insulating substrate, Toya Kai, Kazutoshi Kojima, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki, JSAP 2022 Autumn Conference, 2022/09/20, Without Invitation, Japanese, Sendai
  29. Operating Characteristics of 4H-SiC 3T/4T- Active Pixel Sensors, Masayuki Tsutsumi, Tatsuya Meguro, Akinori Takeyama, Takeshi Ohsima, Yasunori Tanaka, and Shin-Ichiro Kuroki, International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM2022), 2022/09/15, Without Invitation, English, Davos, Switzerland
  30. Bias temperature stress instability in 4H-SiC capacitors with different metal gate in extremely high temperature environment, Vuong Van Cuong, Kaho Koyanagi, Tatusya Meguro,Shin-Ichiro Kuroki, International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM2022), 2022/09/15, Without Invitation, English, Davos, Switzerland
  31. Bipolar Characteristics of Vanadium-doped 4H-SiC Semi-Insulating Layer for Well-less CMOS Circuits, Toya Kai, Kazutoshi Kojima, Takeshi Ohshima, Yasunori Tanaka, Shin-Ichiro Kuroki, International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM2022), 2022/09/13, Without Invitation, English, Davos, Switzerland
  32. Noise Margins and BTI Characteristics of 4H-SiC CMOS Circuits in High-Temperature Environment, Takuma Shima, Toya Kai, Kazutoshi Kojima, Takeshi Ohshima, Yasunori Tanaka, Shin-Ichiro Kuroki, International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM2022), 2022/09/13, Without Invitation, English, Davos, Switzerland
  33. Impact of conductivity type of vanadium doped 4H-SiC epilayer on semi-insulating characteristics, Kazutoshi Kojima Shinichiro Sato, Takeshi Ohshima and Shin-Ichiro Kuroki, International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM2022), 2022/09/13, Without Invitation, English, Davos, Switzerland
  34. Parameter Extraction from Transfer Characteristics Measurement of 4H-SiC MOSFET in Extremely High Temperature Ambient, Vuong Van Cuong, Tatusya Meguro, Seiji Ishikawa, Hiroshi Sezaki, Tomonori Maeda, Shin-Ichiro Kuroki, International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM2022), 2022/09/13, Without Invitation, English, Davos, Switzerland
  35. (Invited) Research and Development on SiC Extreme-Environment Electronics, Shin-Ichiro Kuroki, Takuma Shima, Tatsuya Meguro, Vuong Van Cuong, Akinori Takeyama Takahiro Makino, Takeshi Ohshima, Kazutoshi Kojima, Yasunori Tanaka, IEICE Symposium, 2022/03/16, With Invitation, Japanese, IEICE, Online
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  36. (Invited) SiC Extreme-Environment Electronics: From Nuclear Power Station to New Medical Applications, Shin-Ichiro Kuroki, International Workshop on Nanodevice Technologies 2022, in Memory of M. Hirose (IWNT2022), 2022/03/11, With Invitation, English, RNBS, Hiroshima University, Online
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  37. (Invited) High temperature operation of SiC MOSFET integrated circuits and its SiC/metal interface reliability, Shin-Ichiro Kuroki, Vuong Van Cuong, Takuma Shima, Touya Kai, Tatsuya Meguro, The Japan Society of Applied Physics, Advanced Power Semiconductors Division, The 9th workshop, "High temperature Integrated Circuit", 2022/03/10, With Invitation, Japanese, The Japan Society of Applied Physics, Advanced Power Semiconductors Division, Online
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  38. (Invited) SiC Integrated Circuits and Pixel Devices for Extreme-Environment Applications, Shin-Ichiro Kuroki, Takuma Shima, Tatsuya Meguro, Vuong Van Cuong, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, Kazutoshi Kojima, Yasunori Tanaka, The Institute of Electrical Engineers of Japan, 2022/03/09, With Invitation, Japanese, The Institute of Electrical Engineers of Japan, Online
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  39. (Invited) Research on SiC Extreme Environment Electronics, Shin-Ichiro Kuroki, IEICE The 2nd CoE symposium, 2021/12/07, With Invitation, Japanese, IEICE, Virtual Symposium
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  40. (Invited)Development of Radiation Resistant Silicon Carbide Semiconductor Devices, Takeshi Ohshima, Akinori Takeyama, Takahiro Makino, Shin-Ichiro Kuroki, Yasunori Tanaka, The 82nd JSAP Autumn Meeting 2021, Symposium "Decommissioning of Fukushima Dai-ichi Nuclear Reactors, and Fukushima's Rehabilitation -What and How We Can Contribute as JSAP Specialists?-", 2021/09/10, With Invitation, Japanese, The Japan Society of Applied Physics (JSAP), Virtual Conference
  41. (Invited)(100)-Surface-Oriented Poly-Si Thin Film Transistors by using Continuous-Wave Laser Lateral Crystallization, Shin-Ichiro Kuroki, Thi Thuy Nguyen, THERMEC2021, INTERNATIONAL CONFERENCE ON PROCESSING & MANUFACTURING OF ADVANCED MATERIALS, 2021/05/10, With Invitation, English, Wien, Austria /Virtual Conference
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  42. (Invited) Research on SiC Image Sensors for High Radiation Environments, Shin-Ichiro Kuroki, Tatsuya Meguro, kenta Nishigaito, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, Yasunori Tanaka, Japan Society of Applied Physics, Advanced Power Semiconductors Division, The 19th meeting, 2021/04/27, With Invitation, Japanese, Japan Society of Applied Physics, Advanced Power Semiconductors Division, Online
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  43. (Invited) SiC Harsh Environment Electronics, Shin-Ichiro Kuroki, The 3rd Technical Workshop on IoT for Harsh Environment Applications, 2020/02/18, With Invitation, Japanese, Aichi Science and Technology Foundation, Nagoya, Japan
  44. (Panel Discussion/ Panelist) Advanced sensing and robotics for harsh radiation field, Shin-Ichiro Kuroki, Fukushima Research Conference "Radiation Hradness and Smartness in Remote Technology for Nuclear Decommissioning" organized by JAEA-CLADS, 2018/11/27, With Invitation, English, Japan Atomic Energy Agency, Tomioka, Futaba-gun, Fukushima
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  45. (Invited)Approach to realizing radiation-hardened devices, Shin-Ichiro Kuroki, Fukushima Research Conference "Radiation Hradness and Smartness in Remote Technology for Nuclear Decommissioning" organized by JAEA-CLADS, 2018/11/26, With Invitation, English, Japan Atomic Energy Agency, Tomioka, Futaba-gun, Fukushima
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  46. (Invited)SiC Harsh Environment Electronics and SOR-X ray measurement and analysis, Shin-Ichiro Kuroki, The 6th workshop for next generation advanced devices/ The 32nd Spring-8 workshop for advanced technologies, 2018/11/19, With Invitation, Japanese, Japan Synchrotron Radiation Research Institute(JASRI)/ SPring8, Tokyo
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  47. (Invited/ Tutorial) Power Electronics and Wide-Bandgap Semiconductors, Shin-Ichiro Kuroki, Thin Film Materials and Devices Meeting, 2011/11/09, With Invitation, Japanese, Thin Film Materials and Devices Meeting Organizing Committee, Kyoto
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  48. (Invited) 4H-SiC MOSFETs and Logic Inverters for Harsh Environment Electronics, Shin-Ichiro Kuroki, 19th Takayanagi Kenjiro Memorial Symposium, 2017/11/21, With Invitation, English, Research Institute of Electronics, Shizuoka University, Hamamatsu, Shizuoka
  49. (Invited) Peltier Effect of Silicon for cooling 4H-SiC-based power devices, Y. Furubayashi, T. Tanehira, K. Yonemori, S. Miyoshi, and S-I. Kuroki, 232nd Electrochemical Society Meeting, 2017/10/03, With Invitation, English, The Electrochemical Society, National Harbor, MD, USA
  50. (Invited) (211) and (100) Surface Oriented Poly-Si Thin Film Transistors with Continuous-Wave Laser Lateral Crystallization, Shin-Ichiro Kuroki, Thi Thuy Nguyen, and Mitsuhisa Hiraiwa, Shin-Ichiro Kuroki, Thi Thuy Nguyen, and Mitsuhisa Hiraiwa, The 17th International Meeting on Information Display (iMID2017), Busan, Korea, 2017/08/30, With Invitation, English, Busan, Korea
  51. (Invited seminar) 4H-SiC MOSFETs and Logic Inverters for Harsh Environment Electronics, Shin-Ichiro Kuroki, IEEE Sweden, 2017/01/30, With Invitation, English, IEEE Sweden, Kista, Sweden
  52. (Invited) 4H-SiC MOSFETs and Logic Inverters for Radiation-Hardened Electronics, Shin-Ichiro Kuroki, International Workshop on Radiation Resistant Sensors and Related Technologies for Nuclear Power Plant Decommissioning (R2SRT2016), 2016/04, With Invitation, English, Iwaki, Fukushima
  53. (Invited) 4H-SiC MOSFETs for power and harsh environment electronics, Shin-Ichiro. Kuroki, Annual World Congress of Smart Materials 2016-Develop New Path of Smartness, 2016/03, With Invitation, English, Singapore
  54. (Invited) Poly-Si TFTs with One-dimensionally Long Silicon Crystal Grains Using DLB Continuous-wave Laser Lateral Crystallization, Shin-Ichiro Kuroki, iMiD 2015: The 15th International Meeting on Information Display, 2015/08, With Invitation, English, Daegu, Korea
  55. (Invited) Formation of Biaxially-Oriented Poly-Si Thin Films by Double-Line Beam Continuous-Wave Laser Lateral Crystallization for High-Performance TFT, Shin-Ichiro Kuroki, IEICE technical report. Silicon devices and materials, 2012/04, With Invitation, Japanese
  56. (Invited) One-dimensionally Long Silicon Grain Formation by Continuous-Wave Green Laser and Its Applications., Shin-Ichiro Kuroki, THE 6th INTERNATIONAL THIN-FILM TRANSISTOR CONFERENCE (January 28-29, 2011, Hyogo)., 2010/01, With Invitation, English
  57. (Invited) Continuous-Wave laser lateral crystallization and TFT characteristics, Shin-Ichiro Kuroki, Japan Society of Appplied Physics, 58th Spring Meeting, 2011/03, With Invitation, Japanese

Awards

  1. 2023/12/13, Semicon Japan Academia Award, SEMI Japan, the Top Prize
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  2. 2013/03/06, Marubun Research Promotion Fundation, Grant for International Exchange and Research, Marubun Research Promotion Fundation, Research on Silicon Carbide Integrated Circuits with High-Radiation Hardness
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  3. 2012/07/04, AM-FPD '11 Poster Award, AM-FPD Organizing Committee Chair(AM-FPD組織委員会 委員長)，AM-FPD Award Committee Chair(AM-FPD Award委員会 委員長)

Patented

  1. Patent, 2019/08/16
  2. Patent, 2020/01/07

External Funds

Acceptance Results of Competitive Funds

  1. JSAP KAKENHI Grant-in-Aid for Scientific Research (S), Research on SiC Extreme-Environment Electronics for Exploring Human's New Frontiers, 2024/04/01, 2029/03/31
  2. Fukushima Institute for Research, Education and Innovation (F-REI) Commissioned Project on Advanced Remote Technologies for Reactor Decommissioning and Space Applications, Research and Development of Silicon Carbide MGy-class Radiation-Hardened Image Sensors, 2024/07/01, 2025/03/31
  3. MEXT Advanced Research Infrastructure for Materials and Nanotechnology in Japan, Advanced Research Infrastructure for Materials and Nanotechnology in Japan, 2024/04, 2025/03
  4. Fukushima Institute for Research, Education and Innovation (F-REI) Commissioned Project on Advanced Remote Technologies for Reactor Decommissioning and Space Applications, Research and Development of Silicon Carbide MGy-class Radiation-Hardened Image Sensors, 2024/03/28, 2024/06/30
  5. MEXT Advanced Research Infrastructure for Materials and Nanotechnology in Japan, Advanced Research Infrastructure for Materials and Nanotechnology in Japan, 2023/04, 2024/03
  6. KAKENHI(Grant-in-Aid for Scientific Research (A)), 2020, 2022
  7. Advanced Research Infrastructure for Materials and Nanotechnology in Japan, Advanced Research Infrastructure for Materials and Nanotechnology in Japan, 2022/04, 2023/03
  8. Advanced Research Infrastructure for Materials and Nanotechnology in Japan, Advanced Research Infrastructure for Materials and Nanotechnology in Japan, 2021/04, 2022/03
  9. Advanced Research Infrastructure for Materials and Nanotechnology in Japan, Advanced Research Infrastructure for Materials and Nanotechnology in Japan, 2021/02, 2021/03
  10. The Special Coordination Fund for Promoting Science and Technology (KAKENHI B), Silicon Carbide Harsh Environment Electronics, 2017/04, 2020/03
  11. Nuclear Energy S&T and Human Resource Development Project (through concentrating wisdom), Radiation-hardened Semiconductor Image Sensor, 2016/10, 2019/03
  12. Grant-in-Aid for Scientific Research, MEXT KAKENHI for international joint research, High radiation resistant CMOS integrated circuits using Wide-Band Gap SiC Semiconductor, 2016, 2017
  13. KAKENHI, 2013, 2015
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  14. KAKENHI, Green LSI Technology Using High-Performance TFT Fabricated by Area-Selective Processing, 2011, 2013
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  15. KAKENHI, Orientation-Aligned Si Nano-wires Formed by Multiple-Channeling Ion-Implantation, 2009, 2011
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  16. KAKENHI, 2007, 2008
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  17. KAKENHI, Control of 3D-Crystallization of Silicon Films on Insulating Substrates and Its Application to Thin Film Transistors, 2007, 2008
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  18. KAKENHI, Basic Research on TFT Active-Matrix Artificial Kidney, 2005, 2009
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Social Activities

History as Committee Members

  1. The Japan Society of Applied Physics, Advanced Power Semiconductors Division, Executive Board, 2023/04, 2024/03, The Japan Society of Applied Physics
  2. IEICE Committee on Silicon Devices and Materials, 2024/04/01, 2025/03/31
  3. Thin Film Materials and Devices Meeting, Organizing and Executive Committee, 2023/01, 2023/12, Thin Film Materials and Devices Meeting
  4. IEICE Committee on Silicon Devices and Materials, 2023/04/01, 2024/03/31
  5. The Japan Society of Applied Physics， Advanced Power Semiconductors Division， Executive Board, 2022/04, 2023/03, The Japan Society of Applied Physics
  6. Thin Film Materials and Devices Meeting， Organizing and Executive Committee, 2022/01, 2022/12, Thin Film Materials and Devices Meeting
  7. The Japan Society of Applied Physics， Advanced Power Semiconductors Division， Executive Board, 2021/04, 2022/03, The Japan Society of Applied Physics
  8. Thin Film Materials and Devices Meeting， Organizing and Executive Committee, 2021/01, 2021/12, Thin Film Materials and Devices Meeting
  9. The Japan Society of Applied Physics， Advanced Power Semiconductors Division， Executive Board, 2020/04, 2021/03, The Japan Society of Applied Physics
  10. The Japan Society of Applied Physics， Thin Film and Surface Physics Division， The 48th Executive Board, 2020/04, 2021/03, The Japan Society of Applied Physics
  11. 2020 International Conference on Solid State Devices and Materials(SSDM)， Program committee, 2020/01, 2020/12, SSDM2020 Organizing Committee
  12. Electron Devices' Interface Technologies Workshop Executive and Program Committee, 2020/01, 2021/01, Electron Devices' Interface Technologies Workshop
  13. Thin Film Materials and Devices Meeting， Organizing and Executive Committee, 2020/01, 2020/12, Thin Film Materials and Devices Meeting
  14. The Japan Society of Applied Physics Secretary of Advanced Power Semiconductor Division， Annual Symposium， Executive committee chair, 2019/05, 2019/12
  15. 2019 International Conference on Solid State Devices and Materials(SSDM)， Program committee, 2019/04, 2019/12, SSDM2019 Organizing Committee
  16. The Japan Society of Applied Physics， Advanced Power Semiconductors Division， Executive Board, 2019/04, 2020/03, The Japan Society of Applied Physics
  17. The Japan Society of Applied Physics， Thin Film and Surface Physics Division， The 48th Executive Board, 2019/04, 2020/03, The Japan Society of Applied Physics
  18. The 41th International Symposium on Dry Process (DPS2019)， Executive Committee, 2019/02, 2019/12, The 41th International Symposium on Dry Process (DPS2019)， Organizing Committee
  19. Electron Devices' Interface Technologies Workshop Executive and Program Committee, 2019/01, 2020/01, Electron Devices' Interface Technologies Workshop
  20. Thin Film Materials and Devices Meeting， Organizing and Executive Committee, 2019/01, 2019/12, Thin Film Materials and Devices Meeting
  21. ICSCRM2019 Executive Committee, 2018/08, 2019/12, International Conference on Silicon Carbide and Related Materials 2019(ICSCRM2019)
  22. The Japan Society of Applied Physics， Thin Film and Surface Physics Division， The 47th Executive Board, 2018/04, 2019/03, The Japan Society of Applied Physics
  23. 2018 International Conference on Solid State Devices and Materials (SSDM 2018), 2018/01, 2018/12
  24. Executive Committee, 2017/10, 2018/09, THE 25th INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AMFPD2018)
  25. Program Committee and Session Chair, 2017/07, 2018/10, 14th International Conference on Atomically Controlled Suerfaces， Interfaces and Nanostructures (ACSIN-14)
  26. The Japan Society of Applied Physics， Thin Film and Surface Physics Division， The 46th Executive Board, 2017/04, 2018/03, The Japan Society of Applied Physics， Thin Film and Surface Physics Division
  27. The Japan Society of Applied Physics， Chuugoku-Sekoku Section， Section Committee, 2017/04, The Japan Society of Applied Physics， Chuugoku-Sekoku Section
  28. Organizing Committee, 2017/01, 2017/12, Thin Film Materials and Devices Meeting
  29. Executive Committee, 2016/10, 2017/09, THE 24th INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AMFPD2017)
  30. Organizing and Executive Committee, 2016/10, 2017/03, International Workshop on Nanodevice Technologies 2017
  31. Scientific Committee, 2016/10, 2017/06, INTERNATIONAL CONFERENCE on ADVANCEMENTS in NUCLEAR INSTRUMENTATION MEASUREMENT METHODS and their APPLICATIONS (ANIMMA2017)
  32. Organizing Committee, 2016/01, 2016/12, Thin Film Materials and Devices Meeting
  33. Executive Committee, 2015/10, 2016/09, AM-FPD Organizing Committee
  34. Executive Committee, 2015/10, 2015/10, 6th Thin Film Photovoltaic Cell Seminar
  35. The Japan Society of Applied Physics， Chuugoku-Sekoku Section， Section Secretary, 2015/04, 2017/03, The Japan Society of Applied Physics
  36. Program Committee Chair, 2015/01, 2015/12, Thin Film Materials and Devices Meeting
  37. Program Committee Chair, 2014/10, 2015/09, AM-FPD Organizing Committee
  38. Organizing and Executive Committee, 2014/07, 2015/03, International Workshop on Nanodevice Technologies 2015
  39. Executive Committee Chair, 2014/01, 2014/12, Thin Film Materials and Devices Meeting
  40. Program Committee Chair, 2013/10, 2014/09, AM-FPD Organizing Committee
  41. Japan Section /Section Officer, 2013/10, The Electrochemical Society (ECS) Japan section
  42. Program Committee, 2012/10, 2013/09, AM-FPD Organizing Committee
  43. Investigating Committe on Power Semiconductor Electronics for Industries in Chugoku， Japan, 2012/05, 2013/03, Chugoku Industrial Innovation Center
  44. Organizing Committee, 2012/04, Thin Film Materials and Devices Meeting
  45. Program Committee, 2011/12, 2012/11, 2012 International Conference on Solid State Devices and Materials (SSDM 2012)
  46. Program Committee, 2011/10, 2012/09, AM-FPD Organizing Committee
  47. Section Secretary/Treasurer, 2011/09, 2013/08, The Electrochemical Society (ECS) Japan section
  48. Program Committee, 2010/12, 2011/11, 2011 International Conference on Solid State Devices and Materials (SSDM 2011)

Other Social Contributions

  1. The 3rd Interational Symposium on Biomedical Engineering (ISBE2018), Organizing and Steering committee, Research Institute for Nanodevice and Bio Systems, The 3rd Interational Symposium on Biomedical Engineering (ISBE2018), 2018/11/08, 2018/11/09, Satake Memorial Hall, Hiroshima University, Planner, Lecture, Researchesrs
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  2. International Workshop on Nanodevices Technology 2018, Organizing and Steering committee, Research Institute for Nanodevice and Bio Systems, International Workshop on Nanodevices Technology 2018, 2018/03/02, 2018/03/02, Satake hall, Hiroshima University, Planner, Seminar or workshop, Researchesrs
  3. International Workshop on Nanodevices Technology 2017, Organizing and Steering committee, Research Institute for Nanodevice and Bio Systems, Hiroshima University, 2017/03/02, 2017/03/02, Planner, Seminar or workshop, Researchesrs