SHIN-ICHIRO KUROKI

Last Updated :2021/04/05

Affiliations, Positions
Research Institute for Nanodevice and Bio Systems, Professor
Web Site
E-mail
skurokihiroshima-u.ac.jp
Other Contact Details
1-4-2 Kagamiyama, Higashi-Hiroshima, Japan
TEL : (+81)82-424-6267 FAX : (+81)82-424-3499
Self-introduction
Our laboratory has been conducting research on Silicon-Carboide Harsh Environment Electronics and Silicon Thin-Film Transistors.

Basic Information

Major Professional Backgrounds

  • 2002/04/01, 2005/03/31, Hiroshima University, Research Center for Nanodevices and Systems, Researcher
  • 2005/04/01, 2007/03/31, Tohoku University, Graduate School of Engineering, Assistant Professor
  • 2007/04/01, 2012/03/31, Tohoku University, Graduate School of Engineering, Assistant Professor
  • 2013/10, 2014/01, KTH Royal Institute of Technology, Visiting Researcher
  • 2012/04/01, 2019/02/28, Hiroshima University, Research Institute for Nanodevice and Bio Systems, Associate Professor
  • 2016/06, 2017/02, KTH Royal Institute of Technology, Visiting Researcher
  • 2019/03/01, Hiroshima University, Research Institute for Nanodevice and Bio Systems, Professor
  • 2019/04/01, Research Institute for Nanodevice and Bio Systems, Vice Director
  • 2019/04/01, Graduate School of Advanced Sciences of Matter, Hiroshima University, Vice Director
  • 2019/04/01, Nanotechnology Platform Program of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan, Hiroshima University Director

Educational Backgrounds

  • Hiroshima University, Graduate School, Division of Natural Science, Department of Physics, Japan, 1999/04, 2002/03

Academic Degrees

  • Ph.D., Hiroshima University
  • Master of Science, Hiroshima University

Educational Activity

  • 【Master's Program】Graduate School of Advanced Science and Engineering : Division of Advanced Science and Engineering : Quantum Matter Program
  • 【Doctoral Program】Graduate School of Advanced Science and Engineering : Division of Advanced Science and Engineering : Quantum Matter Program

In Charge of Primary Major Programs

  • Electronic Devices and Systems
  • Information Engineering

Research Fields

  • Engineering;Electrical and electronic engineering;Electron device / Electronic equipment

Research Keywords

  • Silicon Carbide Integrated Circuits and Devices/ Silicon Carbide Power Semiconductor Devices and Module / Silicon Thin Film Transistor / Nephron Chip / Harsh Environments Electronics

Affiliated Academic Societies

  • The Japan Society of Applied Physics
  • IEEE Institute of Electrical and Electronics Engineers/ Electron Devices Society
  • The Electrochemical Society (ECS)

Educational Activity

Course in Charge

  1. 2021, Undergraduate Education, 1Term, Logic System Design
  2. 2021, Graduate Education (Master's Program) , 1Term, LSI Devices and Process Engineering
  3. 2021, Graduate Education (Master's Program) , 1Term, Introduction of the Electronics
  4. 2021, Graduate Education (Master's Program) , First Semester, Seminar on Electronics A
  5. 2021, Graduate Education (Master's Program) , Second Semester, Seminar on Electronics B
  6. 2021, Graduate Education (Master's Program) , Academic Year, Academic Presentation in Electronics
  7. 2021, Graduate Education (Master's Program) , 1Term, Exercises in Electronics A
  8. 2021, Graduate Education (Master's Program) , 2Term, Exercises in Electronics A
  9. 2021, Graduate Education (Master's Program) , 3Term, Exercises in Electronics B
  10. 2021, Graduate Education (Master's Program) , 4Term, Exercises in Electronics B
  11. 2021, Graduate Education (Master's Program) , 1Term, LSI Devices and Process Engineering
  12. 2021, Graduate Education (Master's Program) , 1Term, Introduction of the Electronics
  13. 2021, Graduate Education (Master's Program) , Academic Year, Advanced Study in Quantum Matter
  14. 2021, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Quantum Matter

Research Activities

Academic Papers

  1. Thickness dependencies of SiO2/BaOx layers on interfacial properties of a layered gate dielectric on 4H-SiC, Materials Science in Semiconductor Processing, 121(2021), 105343-1-105343-6, 20200825
  2. CF4:O2 surface etching for the improvement of contact resistance and high-temperature reliability in Ni/Nb ohmic contacts on n-type 4H-SiC, Japanese Journal of Applied Physics, 59, 056501-1-056501-6, 20200429
  3. Thickness Dependences on Interfacial Properties of SiO2/BaO2 layers on 4H-SiC (0001), 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII), WP2-12, 20191127
  4. 4H-SiC Pixel Device with UV Photodiode and MOSFETs for Radiation-Hardened UV Image Sensors, International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019), TH.P.44, 20190929
  5. Suppression of Ion Channeling Effects in 4H-SiC Substrate by Tilt Angle Control of Ion Implantation, The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019), MO.P.33, 20190929
  6. High Temperature Reliability of 4H-SiC Devices and Single Stage 4H-SiC MOSFET Amplifier at 400ºC, The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019), MO.P.33
  7. Pixel Array Integration with SOI-Si photodiode and 4H-SiC MOSFETs for Radiation-Hardened image sensors, The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019), Th.P.30, 20190929
  8. Ni and Nb thickness dependence on low specific contact resistance and high-temperature reliability of ohmic contact to 4H-SiC, Jpn. J. Appl. Phys., 58, 2019
  9. Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer, JAPANESE JOURNAL OF APPLIED PHYSICS, 58(8), 20190801
  10. 4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters, Mat. Sci. Forum, 963, 837-840, 20190719
  11. Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors, Mat. Sci. Forum, 963, 726-729, 20190719
  12. Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs, Mat. Sci. Forum, 963, 613-616, 20190719
  13. Optimization of Ni/Nb Ratio for High-Temperature-Reliable Ni/Nb Silicide Ohmic Contact on 4H-SiC, Mat. Sci. Forum, 963, 498-501, 20190719
  14. Characterization of Ba-Introduced Thin Gate Oxide on 4H-SiC, Mat. Sci. Forum, 963, 451-455, 20190719
  15. Dependence of thin film transistor characteristics on low-angle grain boundaries of (100)-oriented polycrystalline silicon thin films, JAPANESE JOURNAL OF APPLIED PHYSICS, 58(SB), 20190401
  16. Effect of TMCTS silylation treatments on crosslinking density of low-k zeolite porous silica film, JAPANESE JOURNAL OF APPLIED PHYSICS, 58(2), 201902
  17. High-temperature reliability of Ni/Nb ohmic contacts on 4H-SiC for harsh environment applications, THIN SOLID FILMS, 669, 306-314, 20190101
  18. Effect of Low Angle Grain Boundaries on Electron and Hole Mobility, Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials, 1257-1258, 20180909
  19. 4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters, 12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018), TH-01-05, 20180902
  20. Optimization of Ni/Nb Ratio for High-Temperature-Reliable Ni/Nb Silicide Ohmic Contact on 4H-SiC, 12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018), WE-P-CO3, 20180902
  21. Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors, 12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018), TU-P-RQ7, 20160902
  22. Effects of High Gamma-Ray Radiation on 3C-SiC nMOSFETs, 12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018), TU-P-RQ10, 20180902
  23. Hybrid Pixel Devices with SOI-Si photodiode and 4H-SiC MOSFETs for Radiation-Hardened Image Sensors, 12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018), TU-P-RQ11, 20180902
  24. Characterization of Ba-introduced thin gate oxide on 4H-SiC, 12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018), TU-P-SO6, 20180902
  25. Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs, 12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018), MO-P-MO7, 20180902
  26. Crystal orientation control with a continuous-wave laserfor ultra-high mobility silicon thin film transistors, OYO BUTURI, 87(6), 421-425, 201806
  27. Low-parasitic-capacitance self-aligned 4H-SiC nMOSFETs for harsh environment electronics, Mat. Sci. Forum, 924, 971-974, 20180605
  28. 4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts, Mat. Sci. Forum, 924, 423-427, 20180605
  29. Effects of CF4 surface etching on 4H-SiC MOS Capacitors, Mat. Sci. Forum, 924, 465-468, 20180605
  30. Correlation between Field Effect Mobility and Accumulation Conductance at 4H-SiC MOS Interface with Barium, Mat. Sci. Forum, 924, 477-481, 20180605
  31. Electrical properties of Ti-Si-C Ohmic contact on ion-implanted n-type 4H-SiC C face, Mat. Sci. Forum, 924, 409-412, 20180605
  32. Low-k Mesoporous Pure Silica Zeolite Synthesis with the Centrifugation Process of a Zeolite Precursor, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 7(5), N67-N71, 2018
  33. Characterization of p-channel TFTs with (100)-oriented poly-Si thin film formed by multiline beam continuous-wave laser lateral crystallization, International Thin-Film Transistor Conference 2018 (ITC2018), 14
  34. Formation of (100)-oriented large polycrystalline silicon thin films with multiline beam continuous-wave laser lateral crystallization, JAPANESE JOURNAL OF APPLIED PHYSICS, 57(3), 201803
  35. Back-side Illuminated GeSn Photodiode Array on Quartz Substrate Fabricated by Laser-induced Liquid-phase Crystallization for Monolithically-integrated NIR Imager Chip, 2017 International Electron Devices Meeting (IEDM) Technical Digest, 393-396, 201712
  36. Calculation of Seebeck Coefficients for Advanced Heat Transfer Modules, ECS Transaction, 80(5), 57-62, 201710
  37. Peltier Effect of Silicon for Cooling 4H-SiC-based Power Devices, ECS Transaction, 80(5), 77-85, 201710
  38. Low-parasitic-capacitance self-aligned 4H-SiC nMOSFETs for harsh environment electronics, The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017), Washington, D.C., USA, TH.CP.3-1-TH.CP.3-2, 201709
  39. Correlation between field effect mobility and accumulation conductance at 4H-SiC MOS interface with barium, The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017), Washington, D.C., USA, TH.CP.2-1-TH.CP.2-2, 201709
  40. 4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts, The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017), Washington, D.C., USA, WE.DP.4-1-WE.DP.4-2, 201709
  41. Effects of CF4 surface etching on 4H-SiC MOS Capacitors, The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017), Washington, D.C., USA, WE.CP.9-1-WE.CP.9-2, 201709
  42. Electrical properties of Ti-Si-C Ohmic contact on ion-implanted n-type 4H-SiC C face, The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017), Washington, D.C., USA, TU.CP.7-1-TU.CP.7-2, 201709
  43. Formation of epitaxial Ti-Si-C Ohmic contact on 4H-SiC C face using pulsed-laser annealing, APPLIED PHYSICS LETTERS, 110(25), 20170619
  44. Ultrahigh-performance (100)-oriented polycrystalline silicon thin-film transistors and their microscopic crystal structures, APPLIED PHYSICS EXPRESS, 10(5), 201705
  45. 4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics, Materials Science Forum, 897, 669-672, 20170515
  46. Enhanced-Oxidation and Interface Modification on 4H-SiC(0001) Substrate Using Alkaline Earth Metal, Materials Science Forum, 897, 348-351, 20170515
  47. Low Resistance Ti-Si-C Ohmic Contacts for 4H-SiC Power Devices Using Laser Annealing, Mat. Sci. Forum, 897, 399-402, 20170515
  48. Transient observation of Peltier effect for PtSix-coated n-type silicon; cooler for 4H-SiC-based power devices, ECS Journal of Solid State Science and Technology, 6(3), N3089-N3094, 20170201
  49. High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits, IEEE Transactions on Nuclear Science, 64(2), 852-858, 201702
  50. Low resistance Ti-Si-C ohmic contacts for 4H-SiC power devices using Laser annealing, Abstract book of 11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016), Halkidiki, Greece, 561-562, 201609
  51. Enhanced-oxidation and interface modification on 4H-SiC(0001) substrate using alkaline earth metal, Abstract book of 11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016), Halkidiki, Greece, 557-558, 201609
  52. 4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics, Abstract book of 11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016), Halkidiki, Greece, 537-538, 201609
  53. Characterization of (100)-Dominantly Oriented Poly-Si Thin Film Transistors using Multi-Line Beam Continuous-Wave Laser Lateral Crystallization, ECS Transactions, 75(10), 49-54, 201610
  54. Charge-Trap Inactivation of Multi-Line-Beam CLC poly-Si TFTs using Channel Impurity Doing, PRiME2016, 230th Meeting of ECS, Honolulu, USA, H03-2117-H03-2117, 201610
  55. Characterization of (100)-Dominantly Oriented Poly-Si Thin Film Transistors using Multi-Line Beam Continuous-Wave Laser Lateral Crystallization, PRiME2016, 230th Meeting of ECS, Honolulu, USA, H03-2118-H03-2118, 201610
  56. Formation of amorphous alloys on 4H-SiC with NbNi film using pulsed-laser annealing, Applied Physics Letters, 109, 012101-1-012101-5, 20160707
  57. Characterization of Grapho-Silicidation on n+ 4H-SiC C-Face for Back Side Ohmic Contacts of Power Devices, ECS Journal of Solid State Science and Technology, 5(9), P457-P460, 20160706
  58. 4H-SiC MOSFETs and Logic Inverters for Radiation-Hardened Electronics, International Workshop on Radiation Resistant Sensors and Related Technologies for Nuclear Power Plant Decommissioning (R2SRT2016), 36-37, 2016
  59. 4H-SiC MOSFETs for power and harsh environment electronics, Annual World Congress of Smart Materials 2016-Develop New Path of Smartness, 381-381, 2016
  60. Characterization of 4H-SiC nMOSFETs in Harsh Environments, High-Temperature and High Gamma-Ray Radiation, Mat. Sci. Forum, 858, 864-867, 2016
  61. 4H-SiC nMOSFETs with As-doped S/D and NbNi Silicide ohmic contacts, Mat. Sci. Forum, 858, 573-576, 2016
  62. Low resistance ohmic contact formation on 4H-SiC c-face with NbNi silicidation using nano-second laser annealing, Mat. Sci. Forum, 858, 549-552, 2016
  63. 3D Integration of Si-based Peltier device onto 4H-SiC power device, Mat. Sci. Forum, 858, 1107-1111, 2016
  64. Poly-Si TFTs with One-dimensionally Long Silicon Crystal Grains Using DLB Continuous-wave Laser Lateral Crystallization, iMiD 2015: The 15th International Meeting on Information Display, 250-250, 2015
  65. Characterization of 4H-SiC nMOSFETs in Harsh Environments; High Temperature and High Gamma-Ray Radiation, The International Conference on Silicon Carbide and Related Materials 2015(ICSCRM2015), We-P-60, 2015
  66. 4H-SiC nMOSFETs with As-doped S/D and NbNi silicide ohmic contacts, The International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM2015), Mo-P-26, 2015
  67. Low resistance ohmic contact formation on 4H-SiC c-face with NbNi silicidation using nano-second laser annealing, The International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM2015), Mo-P-21, 2015
  68. 3D Integration of Si-based Peltier device onto 4H-SiC power device, The International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM2015), Mo-P-32, 2015
  69. Characterization of 4H-SiC nMOSFETs with As-doped S/D and NbNi Silicide Contacts After High Gamma-Ray Radiation, Proceedings of The 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA2015), 117-118, 2015
  70. High performance Poly-Si TFTs with Highly Bi-axially Oriented Poly-Si Thin Films Using DLB Continuous-wave Laser Lateral Crystallization, Jpn. J. Appl. Phys, 53, 03CC02 -1-03CC02 -4, 2014
  71. Low resistance Ohmic Contact Formation of Ni Silicide on Partially Si Ion Implanted n+ 4H-SiC, Mat. Sci. Forum, 778-780, 689-692, 2014
  72. Complex permittivities of breast tumor tissues obtained from cancer surgeries, Appl. Phys. Lett., 104, 253702-253702, 2014
  73. Phosphorous ion implantation into NiGe layer for Ohmic contact formation on n-type Ge,, Jpn. J. Appl. Phys, 53, 08LD01-1-3 08LD01-5 , 2014
  74. Characteristics of Poly-Si Thin Film Transistors with Highly Biaxially Oriented Linearly Arranged Poly-Si Thin Films Using Double Line Beam Continuous-Wave Laser Lateral Crystallization, ECS Transactions, 64(10), 39-44, 2014
  75. Characterization of Poly-Si TFTs with Highly Bi-Axially Oriented Poly-Si Thin Films Using DLB Continuous-Wave Laser Lateral Crystallization, 2014 MRS Spring Meeting, A17.06, San Francisco, April 25 , 2014
  76. Leakage Current Reduction of 4H-SiC Schottky Barrier Diode by Using Sacrificial Oxidation, 2014 MRS Spring Meeting, DD6.05, San Francisco, April 23 , 2014
  77. Effect of ozone radical treatment for high-performance poly-Si TFTs, The proceedings of The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD14, 189-192, 2014
  78. Characteristics of Poly-Si Thin Film Transistors with Highly Biaxially Oriented Linearly Arranged Poly-Si Thin Films Using Double Line Beam Continuous-Wave Laser Lateral Crystallization, 226th Meeting of The Electrochemical Society, Q10 Thin Film Transistor 12 (TFT12), 1906, Cancun, Mexico, October 6 , 2014
  79. Area Expansion of Crystallized Si Films on YSZ Layers by Two-step Method in PLA, Proceedings of IDW'14, AMD8-2L, 259-260, 2014
  80. Fabrication of High-Performance Poly-Si TFTs with Highly Biaxially-Oriented Poly-Si Thin Films by Double-Line Beam Continuous-Wave Laser Lateral Crystallization, 114(1), 45-49, 20140410
  81. Low-k Mesoporous Pure Silica Zeolite with High Elastic Modulus Using 1,3,5,7-Tetra-Methyl-Cyclo-Tetra-Siloxane and Ultraviolet Treatments, ECS J. Solid State Sci. Technol, 2(4), N89-N92, 2013
  82. High performance poly-Si Thin Film Transistor with One-dimensionally Long Si Grains Using DLB Continuous-wave Laser Lateral Crystallization, The proceedings of The Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices , AM-FPD13, 199-202, 2013
  83. Low-k Mesoporous Pure Silica Zeolite Synthesis with Centrifugation Process of Zeolite Precursor, Extended Abstracts of 2013 International Conference on Solid State Devices and Materials, 858-859, 2013
  84. Low Ohmic Contact Formation of Ni Silicide on Partially Si Ion Implanted n+ 4H-SiC, Technical digest of The International Conference on Silicon Carbide and Related Materials 2013, ICSCRM2013, Mo-P40-62, 2013
  85. Phosphorous Ion Implantation into NiGe Layer for Ohmic Contact Formation on n-Ge, 2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY, IWDTF13, 101-102, 2013
  86. Tri-Gate Polycrystalline Silicon Thin Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization for Improvement of Electron Transport Properties, Jpn. J. Appl. Phys., 51, 02BJ03-1-02BJ03-6, 2012
  87. Tri-Gate Polycrystalline Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization with Improved Electron Transport Properties, Jpn J Appl Phys, 51(2), 02BJ03-02BJ03-6, 20120225
  88. In-Plane Grain Orientation Alignment of Polycrystalline Si Films by Normal and Oblique-Angle Ion-Implantations, Jpn. J. Appl. Phys., 51(4), 04DH03-1-04DH03-4, 2012
  89. Cu Single Damascene Integration of an Organic Nonporous Ultralow-k Fluorocarbon Dielectric Deposited by Microwave-Excited Plasma-Enhanced CVD, IEEE Trans. Electron Devices, 59(5), 1445-1453, 2012
  90. Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow-k Dielectric Fluorocarbon on Advanced Cu Interconnects, Jpn. J. Appl. Phys., 51, 05EC03-1-05EC03-6, 2012
  91. A novel chemically, thermally and electrically robust Cu interconnect structure with an organic non-porous ultralow-k dielectric fluorocarbon (k=2.2), Proceeding of 2012 IEEE Symposium on VLSI Technology, 119-120, 2012
  92. Layered Low-k Porous Silica Zeolite Films for Inter-Metal Dielectrics with High Elastic Modulus, Extended Abstracts of 2012 International Conference on Solid State Devices and Materials, 58-59, 2012
  93. Advanced Direct-polish Process on Organic Non-Porous Ultra Low-k Fluorocarbon Dielectric on Cu Interconnects, ECS Transactions, 34(1), 653-658, 2011
  94. Strain-Induced Back Channel Electron Mobility Enhancement in Polycrystalline Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization, Jpn. J. Appl. Phys., 50, 04DH10-1-04DH10-5 , 2011
  95. Electrical Characteristics of Novel Non-porous Low-k Dielectric Fluorocarbon on Cu Interconnects for 22nm Generation and Beyond, Jpn. J. Appl. Phys., 50, 05EB02-1-05EB02-5, 2011
  96. Seed-Free Fabrication of Highly Bi-Axially Oriented Poly-Si Thin Films by Continuous-Wave Laser Crystallization with Double-Line Beams, J. Electrochem. Soc., 158(9), H924-H930, 2011
  97. Carrier transport and its variation of laser-lateral-crystallized Poly-Si TFTs, Electron. Lett., 47(24), 1336-1338, 2011
  98. Bi-Axially Orientation-Controlled Si Thin Films on Glass Substrates by Double-Line-Beam CW Laser Annealing, Conference Proceedings of EUROSOI 2011, VII Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits, 51-52, 2011
  99. Cu damascene Interconnects with an Organic Low-k Fluorocarbon Dielectric Deposited by Microwave Excited Plasma Enhanced CVD, IEEE International Interconnect Technology Conference 2011, 82-82, 2011
  100. Crystal Growth of Highly Biaxially-Oriented Poly-Si Thin Films by W-Line Beam Continuous-Wave Laser Lateral Crystallization, The proceedings of The Eighteenth International Workshop on Active-Matrix Flatpanel Displays and Devices , AM-FPD11, 215-216, 2011
  101. Alignment of In-plane Crystallographic Grain Orientations in Polycrystalline Si Films by Normal and Oblique-Angle Ion-Implantations, Extended Abstracts of 2011 International Conference on Solid State Devices and Materials, 300-301, 2011
  102. Tri-Gate Poly-Si TFTs Fabricated by CW Laser Lateral Crystallization for Improvement of Electron Transport Properties, Extended Abstracts of 2011 International Conference on Solid State Devices and Materials, 1215-1216, 2011
  103. Ferroelectric Properties of Lead Zirconate Titanate Thin Film on Glass Substrate Crystallized by Continuous-Wave Green Laser Annealing, Jpn. J. Appl. Phys, 49, 04DH14-1-04DH14-4 , 2010
  104. Enhancement of Current Drivability of Nanograting Polycrystalline Silicon Thin-Film Transistors, Jpn. J. Appl. Phys, 49, 04DJ11-1-04DJ11-5, 2010
  105. Highly Reliable and Drivability-Enhanced MOS Transistors with Rounded Nanograting Channels, IEICE Transactions on Electronics, E93-C(11), 1638-1644, 2010
  106. One-dimensionally Long Silicon Grain Formation by Continuous-Wave Green Laser and Its Applications, THE PROCEEDINGS OF THE 6th INTERNATIONAL THIN-FILM TRANSISTOR CONFERENCE, 28-31, 2010
  107. Strain-Induced Back Channel Electron Mobility Enhancement in Poly-Si TFTs Formed by Continuous-Wave Laser Lateral Crystallization, Extended Abstracts of 2010 International Conference on Solid State Devices and Materials, 1307-1308, 2010
  108. Electrical Characteristics of Novel Non-porous Low-k Dielectric Fluorocarbon on Cu Interconnects for 22 nm Generation and Beyond, Advanced Metalization Conference 2010: 20 th Asian Session, 54-55, 2010
  109. Development of Direct-polish Process on Non-porous Ultra Low-k Dielectric/Cu Interconnects for 22nm Generation and Beyond, 2010 International Conference on Planarization/CMP Technology, 51-54, 2010
  110. Evaluation of Internal Strain and Electron Mobility in poly-Si TFTs Formed by CW Laser Lateral Crystallization, Technical report of IEICE. SDM, 110(241), 41-44, 20101014
  111. Roughness Reduction in Polycrystalline Silicon Thin Films Formed by Continuous-Wave Laser Lateral Crystallization with Cap SiO2 Thin Films, Jpn. J. Appl. Phys., 48, 04C129-1-04C129-4, 2009
  112. Low-Temperature Recrystallization of Ferroelectric Lead Zirconate Titanate Thin Films on Glass Substrate Using Continuous-Wave Green Laser, Jpn. J. Appl. Phys, 48, 04C142-1-04C142-4, 2009
  113. Research on High Performance Poly-Si TFTs with One-dimensionally long grain and reduced surface roughness, Proceedings of SOIM-GCOE08, 207-207, 2009
  114. Ion-Implanted Boron Activation in a Preamorphized Si Layer by Microwave Annealing, Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, 330-331, 2009
  115. Highly-(001)-Oriented Ferroelectric PZT Thin Films on Glass by CW Green-Laser Crystallization, Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, 885-886, 2009
  116. Continuous Manipulation of Micro Particles by Use of Asymmetric Electrodes Array, Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, 673-674, 2009
  117. The Drivability Enhancement of Poly-Si TFTs by use of Nanograting Substrate, Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, 581-582, 2009
  118. Current Voltage Characteristics of Si-MESFET on SOI Substrate, Technical report of IEICE. SDM, 109(257), 27-30, 20091022
  119. Crystallization of Amorphous Silicon Film on Glass Substrate by Heated Gas Beam Annealing, Technical report of IEICE. SDM, 109(257), 47-50, 20091022
  120. Analysis of Continuous-Wave Laser Lateral Crystallized Polycrystalline Silicon Thin Films with Large Tensile Strain, Jpn. J. Appl. Phys., 47, 3046-3049, 2008
  121. Analysis of Drivability Enhancement Factors in Nanograting Metal-Oxide-Semiconductor Field-Effect Transistors, Jpn. J. Appl. Phys, 47, 3081-3085, 2008
  122. Crystallinity and Internal Strain of One-Dimensionally Long Si Grains by CW Laser Lateral Crystallization, ECS Transactions, 16(9), 145-151, 2008
  123. Morphology Control of Ferroelectric PZT Thin Films Crystallized On Glass with Continuous-Wave Green Laser, Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 140-141, 2008
  124. Roughness Reduction Technique for High Performance Poly-Si TFTs by CW Laser Lateral Crystallization with Cap SiO2 Thin Films, Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 140-141, 2008
  125. Carrier Transport Mechanism in Poly-Si TFTs with One-Dimensionally Long Grains, Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 766-767, 2008
  126. Crystallinity and Internal Strain of One-Dimensionally Long Si Grains by CW Laser Lateral Crystallization, 214th ECS Meeting, E13, 2276-2276, 2008
  127. Research on Poly-Si TFTs with One-dimensionally long grains formed by CW laser lateral crystallization, Proceedings of SOIM-GCOE08, 59-60, 2008
  128. Influence of strain effects on characteristics of nanograting channel MOSFET, Proceedings of SOIM-GCOE08, 216-216, 2008
  129. Planarization of CW laser crystallized Si thin films by chemical mechanical polishing using slurry with ethyl alcohol, Technical report of IEICE. SDM, 108(236), 13-15, 20081002
  130. Advantages of Nano-Grating Si Substrates in CMOS-FET Characteristics, ECS Transactions, 11(6), 467-472, 2007
  131. Self-seeding Crystallization of Silicon Thin Films Using Continuous-Wave Laser, ECS Transactions, 2(10), 71-75, 2007
  132. Nano-Grating Channel MOSFETs for Improved Current Drivability, ECS Transactions, 2(10), 83-89, 2007
  133. Enlargement of Crystal Grains in Thin Silicon Films by Continuous-Wave Laser Irradiation, Jpn. J. Appl. Phys., 46(4B), 2501-2504, 2007
  134. Characteristics of Nano-Grating N-Channel MOSFETs for Improved Current Drivability, IEICE TRANS. ELECTRON, E90-C(9), 1830-1836, 2007
  135. Permittivity Enhancement of Mechanically Strained SrTiO3 MIM Capacitor, ECS Transactions, 11(3), 293-299, 2007
  136. The Drivability Enhancement Mechanisms in Nano-grating MOSFETs, Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials, 204-205, 2007
  137. Lateral Recrystallized Si Thin Films with Large Tensile Strain for High Performance Thin Film Transistors, Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials, 566-567, 2007
  138. Permittivity Enhancement of Mechanically Strained SrTiO3 MIM Capacitor, 212th ECS Meeting, E3, 1101-1101, 2007
  139. Advantages of Nano-Grating Si Substrates in CMOS-FET Characteristics, 212th ECS Meeting, E9, 1322-1322, 2007
  140. C-10-24 Current Voltage Characteristics of Scaled n-type SOI-MESFETs, Proceedings of the Society Conference of IEICE, 2008(2), 20080902
  141. Modulation of Dielectric Constant on Mechanically Strained SrTiO_3 MIM Capacitor, Technical report of IEICE. SDM, 107(245), 23-24, 20070927
  142. Measurement and Analysis of Water Adsorption in Porous Silica Films, J. Electrochem. Soc., 153(8), G759-G764, 2006
  143. Large Grain Growth of Silicon Thin Films by using CW Green Laser, IEICE Technical Report, ED2006-79, SDM2006-87, 119-122, 2006
  144. Crystallization Enhancement of Ferroelectric PZT Thin Films, IEICE Technical Report, ED2006-112, SDM2006-120, 277-280, 2006
  145. Self-seeding Crystallization of Silicon Thin Films Using Continuous-Wave Laser, 209th Electrochem. Soc. Meeting, 354-354, 2006
  146. Drivability Enhancement of MOS Transistors Fabricated on Nano-grating Silicon Wafers, 209th Electrochem. Soc. Meeting, 360-360, 2006
  147. Large Grain Growth of Silicon Thin Films By using CW Green Laser, 2006 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 119-122, 2006
  148. Crystallization Enhancement of Ferroelectric PZT Thin Films by using Continuous-Wave Laser, 2006 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 277-280, 2006
  149. Enlargement of Crystal Grains in Thin Silicon Films by Continuous-Wave Laser Irradiation, Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, 696-697, 2006
  150. High-Density Microbubble Formation by Utilizing the Specific Additives for Chemical-less degreasing Process, Abstracts of MRS Meeting, A3, 65-65, 2006
  151. Characterization of Photosensitive Low-k Films Using Electron-Beam Lithography, J. Electrochem. Soc., 152(4), G281-G285, 2005
  152. Influence of Humidity on Electrical Characteristics of Self-Assembled Porous Silica Low-k Films, J. Electrochem. Soc., 152(7), G560-G566, 2005
  153. A Novel Photosensitive Porous Low-k Interlayer Dielectric Film, Jpn. J. Appl. Phys., 43(4B), 1820-1824, 2004
  154. A Novel Photosensitive Porous Low-$k$ Interlayer Dielectric Film, Jpn J Appl Phys, 43(4), 1820-1824, 20040415
  155. Photosensitive Porous Low-k Interlayer Dielectric Film, Proceedings of SPIE, Optics East 2004: Sensors, Nanotechnologies and Application, 5592, 170-174, 2004
  156. Low-k Dielectric Film Patterning by X-Ray Lithography, J. Appl. Phys., 42(4B), 1907-1910, 2003
  157. Characterization of Photosensitive Low-k Films using Electron-Beam Lithography, Abstract of the 2003 Material Research Society Spring Meeting, 127-127, 2003
  158. A Novel Photosensitive Porous Low-k Interlayer Dielectric Film, Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials, 468-469, 2003
  159. Influence of Humidity on Electrical Characteristics of Porous Silica Films, Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials, 478-479, 2003
  160. Calculation of the Pontrjagin class for U(1) instantons on non-commutative R4, J. High Energy Phys., 8, 28-28, 2002
  161. Direct Patterning of Low-k Dielectric Films using X-ray Lithography,, Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, 464-465, 2002
  162. Noncommutative Cohomological Field Theory and GMS Soliton, J. Math. Phys., 43, 872-896, 2001
  163. Elongated U(1) Instantons on Noncommutative R4, J. High Energy Phys., 11, 68-68, 2001
  164. Large Grain Growth of Silicon Thin Films by using CW Green Laser, 106(138), 119-122, 20060626
  165. Enlargement of Crystal-Grains in Thin Silicon Films Using Continuous-Wave Laser Irradiation, 2006, 696-697, 20060913
  166. The Drivability Enhancement Mechanisms in Nano-grating MOSFETs, 2007, 204-205, 20070919
  167. Lateral Recrystallized Si Thin Films with Large Tensile Strain for High Performance Thin Film Transistors, 2007, 566-567, 20070919
  168. Highly Reliable and Drivability-Enhanced MOS Transistors with Rounded Nanograting Channels, IEICE Trans. Electron., 93(11), 1638-1644, 20101101
  169. Formation of Biaxially-Oriented Poly-Si Thin Films by Double-Line Beam Continuous-Wave Laser Lateral Crystallization for High-Performance TFT, 112(18), 27-32, 20120420
  170. Formation of Biaxially-Oriented Poly-Si Thin Films by Double-Line Beam Continuous-Wave Laser Lateral Crystallization for High-Performance TFT, 112(19), 27-32, 20120420
  171. Large Grain Growth of Silicon Thin Films by using CW Green Laser(Session 6A Silicon Devices III,AWAD2006), Technical report of IEICE. SDM, 106(138), 119-122, 20060626
  172. Crystallization Enhancement of Ferroelectric PZT Thin Films by using Continuous-Wave Laser(Session 9A Silicon Devices VI), Technical report of IEICE. SDM, 106(138), 277-280, 20060626
  173. Large Grain Growth of Silicon Thin Films by using CW Green Laser(Session 6A Silicon Devices III,AWAD2006), IEICE technical report. Electron devices, 106(137), 119-122, 20060626
  174. Crystallization Enhancement of Ferroelectric PZT Thin Films by using Continuous-Wave Laser(Session 9A Silicon Devices VI,AWAD2006), IEICE technical report. Electron devices, 106(137), 277-280, 20060626
  175. The 't Hooft-Berknoff Equation and The Bilocal Auxiliary Field Method, Soryushiron Kenkyu, 103(5), E99-E100, 20010820
  176. Noncommutative Deformation Invariant Quantum Field Theory, Soryushiron Kenkyu, 104(5), 20020220
  177. MAG Topological Field Theory and Quark Confinement : review, Soryushiron Kenkyu, 98(6), F2-F3, 19990320
  178. Characteristics of Nano-Grating N-Channel MOSFETs for Improved Current Drivability(Semiconductor Materials and Devices), IEICE transactions on electronics, 90(9), 1830-1836, 20070901
  179. Fabrication of Highly Crystalline-Oriented Poly-Si Thin Films by using Double-Line-Beam CLC for High Performance LPTS-TFT, Technical report of IEICE. SDM, 110(241), 45-48, 20101014
  180. Integration of Novel Non-porous Low-k Dielectric Fluorocarbon into Advanced Cu Interconnects, Technical report of IEICE. SDM, 110(241), 53-56, 20101014
  181. Formation of Biaxially-Oriented Poly-Si Thin Films by Double-Line Beam Continuous-Wave Laser Lateral Crystallization for High-Performance TFT, Technical report of IEICE. SDM, 112(18), 27-32, 20120420
  182. Low-k Dielectric Film Patterning by X-Ray Lithography, Japanese Journal of Applied Physics, 42(4), 1907-1910, 2003
  183. A Novel Photosensitive Porous Low-k Interlayer Dielectric Film, Japanese Journal of Applied Physics, 43(4), 1820-1824, 2004
  184. Tribological Study of Direct-polish Process on Non-porous Ultra Low-k Dielectric / Cu Interconnects, Proceedings of JSPE Semestrial Meeting, 2010(0), 133-134, 2010
  185. Low-$k$ Dielectric Film Patterning by X-Ray Lithography, Jpn J Appl Phys, 42(4), 1907-1910, 20030415
  186. Enlargement of Crystal Grains in Thin Silicon Films by Continuous-Wave Laser Irradiation, Jpn J Appl Phys, 46(4), 2501-2504, 20070430
  187. Analysis of Continuous-Wave Laser Lateral Crystallized Polycrystalline Silicon Thin Films with Large Tensile Strain, Jpn J Appl Phys, 47(4), 3046-3049, 20080425
  188. Analysis of Drivability Enhancement Factors in Nanograting Metal–Oxide–Semiconductor Field-Effect Transistors, Jpn J Appl Phys, 47(4), 3081-3085, 20080425
  189. Roughness Reduction in Polycrystalline Silicon Thin Films Formed by Continuous-Wave Laser Lateral Crystallization with Cap SiO2 Thin Films, Jpn J Appl Phys, 48(4), 04C129-04C129-4, 20090425
  190. Low-Temperature Recrystallization of Ferroelectric Lead Zirconate Titanate Thin Films on Glass Substrate Using Continuous-Wave Green Laser, Jpn J Appl Phys, 48(4), 04C142-04C142-4, 20090425
  191. Ferroelectric Properties of Lead Zirconate Titanate Thin Film on Glass Substrate Crystallized by Continuous-Wave Green Laser Annealing, Jpn J Appl Phys, 49(4), 04DH14-04DH14-4, 20100425
  192. Enhancement of Current Drivability of Nanograting Polycrystalline Silicon Thin-Film Transistors, Jpn J Appl Phys, 49(4), 04DJ11-04DJ11-5, 20100425
  193. Strain-Induced Back Channel Electron Mobility Enhancement in Polycrystalline Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization, Jpn J Appl Phys, 50(4), 04DH10-04DH10-5, 20110425
  194. In-Plane Grain Orientation Alignment of Polycrystalline Silicon Films by Normal and Oblique-Angle Ion Implantations, Jpn J Appl Phys, 51(4), 04DH03-04DH03-4, 20120425
  195. Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow-k Dielectric Fluorocarbon on Advanced Cu Interconnects, Jpn J Appl Phys, 51(5), 05EC03-05EC03-6, 20120525
  196. Strain-induced back channel electron mobility enhancement in polycrystalline silicon thin-film transistors fabricated by continuous-wave laser lateral crystallization (Special issue: Solid state devices and materials), Japanese journal of applied physics, 50(4), 04DH10-1〜5, 201104
  197. Electrical Characteristics of Novel Non-porous Low-$k$ Dielectric Fluorocarbon on Cu Interconnects for 22 nm Generation and Beyond, Jpn J Appl Phys, 50(5), 05EB02-05EB02-5, 20110525
  198. A Novel Photosensitive Porous Low-$k$ Interlayer Dielectric Film, Jpn J Appl Phys, 43(4), 1820-1824, 20040415
  199. Large Grain Growth of Silicon Thin Films by using CW Green Laser, 106(138), 119-122, 20060626
  200. Large Grain Growth of Silicon Thin Films by using CW Green Laser(Session 6A Silicon Devices III,AWAD2006), Technical report of IEICE. SDM, 106(138), 119-122, 20060626
  201. Tribological Study of Direct-polish Process on Non-porous Ultra Low-k Dielectric / Cu Interconnects, Proceedings of JSPE Semestrial Meeting, 2010(0), 133-134, 2010
  202. Analysis of Continuous-Wave Laser Lateral Crystallized Polycrystalline Silicon Thin Films with Large Tensile Strain, Jpn J Appl Phys, 47(4), 3046-3049, 20080425

Invited Lecture, Oral Presentation, Poster Presentation

  1. (Invited) SiC Harsh Environment Electronics, Shin-Ichiro Kuroki, The 3rd Technical Workshop on IoT for Harsh Environment Applications, 2020/02/18, With Invitation, Japanese, Aichi Science and Technology Foundation, Nagoya, Japan
  2. (Panel Discussion/ Panelist) Advanced sensing and robotics for harsh radiation field, Shin-Ichiro Kuroki, Fukushima Research Conference "Radiation Hradness and Smartness in Remote Technology for Nuclear Decommissioning" organized by JAEA-CLADS, 2018/11/27, With Invitation, English, Japan Atomic Energy Agency, Tomioka, Futaba-gun, Fukushima
  3. (Invited)Approach to realizing radiation-hardened devices, Shin-Ichiro Kuroki, Fukushima Research Conference "Radiation Hradness and Smartness in Remote Technology for Nuclear Decommissioning" organized by JAEA-CLADS, 2018/11/26, With Invitation, English, Japan Atomic Energy Agency, Tomioka, Futaba-gun, Fukushima
  4. (Invited)SiC Harsh Environment Electronics and SOR-X ray measurement and analysis, Shin-Ichiro Kuroki, The 6th workshop for next generation advanced devices/ The 32nd Spring-8 workshop for advanced technologies, 2018/11/19, With Invitation, Japanese, Japan Synchrotron Radiation Research Institute(JASRI)/ SPring8, Tokyo
  5. (Invited/ Tutorial) Power Electronics and Wide-Bandgap Semiconductors, Shin-Ichiro Kuroki, Thin Film Materials and Devices Meeting, 2011/11/09, With Invitation, Japanese, Thin Film Materials and Devices Meeting Organizing Committee, Kyoto
  6. (Invited) 4H-SiC MOSFETs and Logic Inverters for Harsh Environment Electronics, Shin-Ichiro Kuroki, 19th Takayanagi Kenjiro Memorial Symposium, 2017/11/21, With Invitation, English, Research Institute of Electronics, Shizuoka University, Hamamatsu, Shizuoka
  7. (Invited) Peltier Effect of Silicon for cooling 4H-SiC-based power devices, Y. Furubayashi, T. Tanehira, K. Yonemori, S. Miyoshi, and S-I. Kuroki, 232nd Electrochemical Society Meeting, 2017/10/03, With Invitation, English, The Electrochemical Society, National Harbor, MD, USA
  8. (Invited) (211) and (100) Surface Oriented Poly-Si Thin Film Transistors with Continuous-Wave Laser Lateral Crystallization, Shin-Ichiro Kuroki, Thi Thuy Nguyen, and Mitsuhisa Hiraiwa, Shin-Ichiro Kuroki, Thi Thuy Nguyen, and Mitsuhisa Hiraiwa, The 17th International Meeting on Information Display (iMID2017), Busan, Korea, 2017/08/30, With Invitation, English, Busan, Korea
  9. (Invited seminar) 4H-SiC MOSFETs and Logic Inverters for Harsh Environment Electronics, Shin-Ichiro Kuroki, IEEE Sweden, 2017/01/30, With Invitation, English, IEEE Sweden, Kista, Sweden
  10. (Invited) 4H-SiC MOSFETs and Logic Inverters for Radiation-Hardened Electronics, Shin-Ichiro Kuroki, International Workshop on Radiation Resistant Sensors and Related Technologies for Nuclear Power Plant Decommissioning (R2SRT2016), 2016/04, With Invitation, English, Iwaki, Fukushima
  11. (Invited) 4H-SiC MOSFETs for power and harsh environment electronics, Shin-Ichiro. Kuroki, Annual World Congress of Smart Materials 2016-Develop New Path of Smartness, 2016/03, With Invitation, English, Singapore
  12. (Invited) Poly-Si TFTs with One-dimensionally Long Silicon Crystal Grains Using DLB Continuous-wave Laser Lateral Crystallization, Shin-Ichiro Kuroki, iMiD 2015: The 15th International Meeting on Information Display, 2015/08, With Invitation, English, Daegu, Korea
  13. (Invited) Formation of Biaxially-Oriented Poly-Si Thin Films by Double-Line Beam Continuous-Wave Laser Lateral Crystallization for High-Performance TFT, Shin-Ichiro Kuroki, IEICE technical report. Silicon devices and materials, 2012/04, With Invitation, Japanese
  14. (Invited) One-dimensionally Long Silicon Grain Formation by Continuous-Wave Green Laser and Its Applications., Shin-Ichiro Kuroki, THE 6th INTERNATIONAL THIN-FILM TRANSISTOR CONFERENCE (January 28-29, 2011, Hyogo)., 2010/01, With Invitation, English
  15. (Invited) Continuous-Wave laser lateral crystallization and TFT characteristics, Shin-Ichiro Kuroki, Japan Society of Appplied Physics, 58th Spring Meeting, 2011/03, With Invitation, Japanese

Awards

  1. 2013/03/06, Marubun Research Promotion Fundation, Grant for International Exchange and Research, Marubun Research Promotion Fundation, Research on Silicon Carbide Integrated Circuits with High-Radiation Hardness
  2. 2012/07/04, AM-FPD '11 Poster Award, AM-FPD Organizing Committee Chair(AM-FPD組織委員会 委員長),AM-FPD Award Committee Chair(AM-FPD Award委員会 委員長)

Patented

  1. Patent, 2019/08/16
  2. Patent, 2020/01/07

External Funds

Acceptance Results of Competitive Funds

  1. JSAP KAKENHI Grant-in-Aid for Scientific Research (A), Research on Silicon-Carbide IoT Platform for Harsh Environment Applications, 2020/04/01, 2023/03/31
  2. The Special Coordination Fund for Promoting Science and Technology (KAKENHI B), Silicon Carbide Harsh Environment Electronics, 2017/04, 2020/03
  3. Nuclear Energy S&T and Human Resource Development Project (through concentrating wisdom), Radiation-hardened Semiconductor Image Sensor, 2016/10, 2019/03
  4. Grant-in-Aid for Scientific Research, MEXT KAKENHI for international joint research, High radiation resistant CMOS integrated circuits using Wide-Band Gap SiC Semiconductor, 2016, 2017
  5. KAKENHI, 2013, 2015
  6. KAKENHI, Green LSI Technology Using High-Performance TFT Fabricated by Area-Selective Processing, 2011, 2013
  7. KAKENHI, Orientation-Aligned Si Nano-wires Formed by Multiple-Channeling Ion-Implantation, 2009, 2011
  8. KAKENHI, 2007, 2008
  9. KAKENHI, Control of 3D-Crystallization of Silicon Films on Insulating Substrates and Its Application to Thin Film Transistors, 2007, 2008
  10. KAKENHI, Basic Research on TFT Active-Matrix Artificial Kidney, 2005, 2009

Social Activities

History as Committee Members

  1. The Japan Society of Applied Physics, Advanced Power Semiconductors Division, Executive Board, 2020/04, 2021/03, The Japan Society of Applied Physics
  2. The Japan Society of Applied Physics, Thin Film and Surface Physics Division, The 48th Executive Board, 2020/04, 2021/03, The Japan Society of Applied Physics
  3. Thin Film Materials and Devices Meeting, Organizing and Executive Committee, 2020/01, 2020/12, Thin Film Materials and Devices Meeting
  4. 2020 International Conference on Solid State Devices and Materials(SSDM), Program committee, 2020/01, 2020/12, SSDM2020 Organizing Committee
  5. Electron Devices' Interface Technologies Workshop Executive and Program Committee, 2020/01, 2021/01, Electron Devices' Interface Technologies Workshop
  6. The Japan Society of Applied Physics Secretary of Advanced Power Semiconductor Division, Annual Symposium, Executive committee chair, 2019/05, 2019/12
  7. ICSCRM2019 Executive Committee, 2018/08, 2019/12, International Conference on Silicon Carbide and Related Materials 2019(ICSCRM2019)
  8. 2019 International Conference on Solid State Devices and Materials(SSDM), Program committee, 2019/04, 2019/12, SSDM2019 Organizing Committee
  9. The 41th International Symposium on Dry Process (DPS2019), Executive Committee, 2019/02, 2019/12, The 41th International Symposium on Dry Process (DPS2019), Organizing Committee
  10. Electron Devices' Interface Technologies Workshop Executive and Program Committee, 2019/01, 2020/01, Electron Devices' Interface Technologies Workshop
  11. Thin Film Materials and Devices Meeting, Organizing and Executive Committee, 2019/01, 2019/12, Thin Film Materials and Devices Meeting
  12. The Japan Society of Applied Physics, Advanced Power Semiconductors Division, Executive Board, 2019/04, 2020/03, The Japan Society of Applied Physics
  13. The Japan Society of Applied Physics, Thin Film and Surface Physics Division, The 48th Executive Board, 2019/04, 2020/03, The Japan Society of Applied Physics
  14. The Japan Society of Applied Physics, Thin Film and Surface Physics Division, The 47th Executive Board, 2018/04, 2019/03, The Japan Society of Applied Physics
  15. The Japan Society of Applied Physics, Thin Film and Surface Physics Division, The 46th Executive Board, 2017/04, 2018/03, The Japan Society of Applied Physics, Thin Film and Surface Physics Division
  16. 2018 International Conference on Solid State Devices and Materials (SSDM 2018), 2018/01, 2018/12
  17. Executive Committee, 2017/10, 2018/09, THE 25th INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AMFPD2018)
  18. Program Committee and Session Chair, 2017/07, 2018/10, 14th International Conference on Atomically Controlled Suerfaces, Interfaces and Nanostructures (ACSIN-14)
  19. Executive Committee, 2016/10, 2017/09, THE 24th INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AMFPD2017)
  20. Scientific Committee, 2016/10, 2017/06, INTERNATIONAL CONFERENCE on ADVANCEMENTS in NUCLEAR INSTRUMENTATION MEASUREMENT METHODS and their APPLICATIONS (ANIMMA2017)
  21. The Japan Society of Applied Physics, Chuugoku-Sekoku Section, Section Committee, 2017/04, The Japan Society of Applied Physics, Chuugoku-Sekoku Section
  22. Organizing Committee, 2017/01, 2017/12, Thin Film Materials and Devices Meeting
  23. Organizing and Executive Committee, 2016/10, 2017/03, International Workshop on Nanodevice Technologies 2017
  24. Organizing Committee, 2016/01, 2016/12, Thin Film Materials and Devices Meeting
  25. Executive Committee, 2015/10, 2016/09, AM-FPD Organizing Committee
  26. Executive Committee, 2015/10, 2015/10, 6th Thin Film Photovoltaic Cell Seminar
  27. The Japan Society of Applied Physics, Chuugoku-Sekoku Section, Section Secretary, 2015/04, 2017/03, The Japan Society of Applied Physics
  28. Program Committee Chair, 2014/10, 2015/09, AM-FPD Organizing Committee
  29. Program Committee Chair, 2015/01, 2015/12, Thin Film Materials and Devices Meeting
  30. Organizing and Executive Committee, 2014/07, 2015/03, International Workshop on Nanodevice Technologies 2015
  31. Executive Committee Chair, 2014/01, 2014/12, Thin Film Materials and Devices Meeting
  32. Japan Section /Section Officer, 2013/10, The Electrochemical Society (ECS) Japan section
  33. Program Committee Chair, 2013/10, 2014/09, AM-FPD Organizing Committee
  34. Program Committee, 2012/10, 2013/09, AM-FPD Organizing Committee
  35. Investigating Committe on Power Semiconductor Electronics for Industries in Chugoku, Japan, 2012/05, 2013/03, Chugoku Industrial Innovation Center
  36. Organizing Committee, 2012/04, Thin Film Materials and Devices Meeting
  37. Program Committee, 2011/12, 2012/11, 2012 International Conference on Solid State Devices and Materials (SSDM 2012)
  38. Program Committee, 2011/10, 2012/09, AM-FPD Organizing Committee
  39. Section Secretary/Treasurer, 2011/09, 2013/08, The Electrochemical Society (ECS) Japan section
  40. Program Committee, 2010/12, 2011/11, 2011 International Conference on Solid State Devices and Materials (SSDM 2011)

Other Social Contributions

  1. The 3rd Interational Symposium on Biomedical Engineering (ISBE2018), Organizing and Steering committee, Research Institute for Nanodevice and Bio Systems, The 3rd Interational Symposium on Biomedical Engineering (ISBE2018), 2018/11/08, 2018/11/09, Satake Memorial Hall, Hiroshima University, Planner, Lecture, Researchesrs
  2. International Workshop on Nanodevices Technology 2018, Organizing and Steering committee, Research Institute for Nanodevice and Bio Systems, International Workshop on Nanodevices Technology 2018, 2018/03/02, 2018/03/02, Satake hall, Hiroshima University, Planner, Seminar or workshop, Researchesrs
  3. International Workshop on Nanodevices Technology 2017, Organizing and Steering committee, Research Institute for Nanodevice and Bio Systems, Hiroshima University, 2017/03/02, 2017/03/02, Planner, Seminar or workshop, Researchesrs