Seiichirou Higashi

Last Updated :2024/06/14

Affiliations, Positions
Graduate School of Advanced Science and Engineering, Professor
E-mail
sehigahiroshima-u.ac.jp

Basic Information

Academic Degrees

  • Doctor of Engineering, Tokyo University of Agriculture and Technology
  • Master of Science, Kyushu University

Research Fields

  • Interdisciplinary science and engineering;Applied physics;Plasma electronics
  • Engineering;Electrical and electronic engineering;Electron device / Electronic equipment

Research Keywords

  • low-temperautre process technology
  • thin-film transistor
  • polycrystalline silicon

Educational Activity

Course in Charge

  1. 2024, Undergraduate Education, 1Term, Solid State Physics
  2. 2024, Undergraduate Education, 4Term, Electronic Material Engineering
  3. 2024, Undergraduate Education, Year, Graduation Thesis
  4. 2024, Graduate Education (Master's Program) , First Semester, Seminar on Electronics A
  5. 2024, Graduate Education (Master's Program) , Second Semester, Seminar on Electronics B
  6. 2024, Graduate Education (Master's Program) , Academic Year, Academic Presentation in Electronics
  7. 2024, Graduate Education (Master's Program) , 1Term, Exercises in Electronics A
  8. 2024, Graduate Education (Master's Program) , 2Term, Exercises in Electronics A
  9. 2024, Graduate Education (Master's Program) , 3Term, Exercises in Electronics B
  10. 2024, Graduate Education (Master's Program) , 4Term, Exercises in Electronics B
  11. 2024, Graduate Education (Master's Program) , 1Term, Physics of Semiconductor Devices
  12. 2024, Graduate Education (Master's Program) , Academic Year, Advanced Study in Quantum Matter
  13. 2024, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Quantum Matter

Research Activities

Academic Papers

  1. Extraction of interfacial thermal resistance across an organic/semiconductor interface using optical-interference contactless thermometry, APPLIED PHYSICS EXPRESS, 17(3), 20240301
    Link to Paper Search Results by DOI
  2. Development of a real-time temperature measurement technique for SiC wafer during ultra-rapid thermal annealing based on optical-interference contactless thermometry (OICT), JAPANESE JOURNAL OF APPLIED PHYSICS, 62(SC), 20230401
    Link to Paper Search Results by DOI
  3. Growth of high-crystallinity silicon films by a combination of intermittent pulse heating and plasma-enhanced chemical vapor deposition, JAPANESE JOURNAL OF APPLIED PHYSICS, 61(SI), 20220701
    Link to Paper Search Results by DOI
  4. Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric-pressure micro thermal plasma jet irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS, 61(SC), 20220501
    Link to Paper Search Results by DOI
  5. Millisecond Annealing by Atmospheric Pressure Thermal Plasma Jet and Direct Imaging of Temperature Distribution using Optical Interference Contactless Thermometry (OICT), ECS Transactions, 104(4), 63-68, 202110
  6. Activation of As Atoms in Ultrashallow Junction during Milli- and Microsecond Annealing Induced by Thermal-Plasma-Jet Irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(4), 201104
    Link to Paper Search Results by DOI
  7. Native Oxidation Growth on Ge(111) and (100) Surfaces, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(4), 201104
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  8. Formation of High-Density Pt Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing Using Thermal Plasma Jet for Floating Gate Memory, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(8), 201108
    Link to Paper Search Results by DOI
  9. The Impact of Y Addition into TiO2 on Electronic States and Resistive Switching Characteristics, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(6), 201106
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  10. Impact of Annealing Ambience on Resistive Switching in Pt/TiO2/Pt Structure, IEICE TRANSACTIONS ON ELECTRONICS, E94C(5), 699-704, 201105
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  11. Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities, IEICE TRANSACTIONS ON ELECTRONICS, E94C(5), 717-723, 201105
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  12. X-ray Photoelectron Spectroscopy Study of Interfacial Reactions between Metal and Ultrathin Ge Oxide, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(10), 201110
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  13. Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium-Yttrium Mixed Oxide, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(10), 201110
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  14. Fabrication of High-Performance Thin-Film Transistors on Glass Substrate by Atmospheric Pressure Micro-Thermal-Plasma-Jet-Induced Lateral Crystallization Technique, JAPANESE JOURNAL OF APPLIED PHYSICS, 51(2), 201202
    Link to Paper Search Results by DOI
  15. Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering, IEICE TRANSACTIONS ON ELECTRONICS, E95C(5), 879-884, 201205
    Link to Paper Search Results by DOI
  16. Evaluation of Chemical Bonding Features and Resistance Switching Behaviors of Ultrathin Si Oxide Dielectric Sandwiched Between Pt Electrodes, JAPANESE JOURNAL OF APPLIED PHYSICS, 51(6), 201206
    Link to Paper Search Results by DOI
  17. High-Quality SiO2/Si Interface Formation and Its Application to Fabrication of Low-Temperature-Processed Polycrystalline Si Thin-Film Transistor, Japanese Journal of Applied Physics, 41(6A), 3646-3650, 20020601
  18. Pulsed-Laser-Induced Microcrystallization and Amorphization of Silicon Thin Films, Japanese Journal of Applied Physics, 40(2A), 480-485, 20010201
  19. Low Temperature Formation of Device Quality SiO2/Si Interfaces Using Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition, Japanese Journal of Applied Physics, 40(6A), 4171-4175, 20010601
  20. Electrical Properties of Pulsed Laser Crystallized Lightly Doped Polycrystalline Silicon Films, Japanese Journal of Applied Physics, 38(8A), L857-L860, 19990801
  21. Improvement of Electrical Properties of Pulsed Laser Crystallized Silicon Films by Oxygen Plasma Treatment, Japanese Journal of Applied Physics, 39(4A), 1656-1659, 20000401
  22. Development of High-Performance Polycrystalline Silicon Thin-Film Transistors (TFTs) Using Defect Control Process Technologies, IEEE Electron Device Letters, 23(7), 407-409, 20020701
  23. Stress in Pulsed-Laser Crystallized Silicon Films, Japanese Journal of Applied Physics, 40(2A), 731-735, 20010201
  24. Heat Treatment with High-Pressure H2O Vapor of Pulsed Laser Crystallized Silicon Films, Japanese Journal of Applied Physics, 39(7A), 3883-3887
  25. Electrical Properties of Pulsed Laser Crystallized Silicon Films, European Journal of Applied Physiology, 38(4A), 1892-1897, 19990401
  26. High Quality Gate-SiOx and SiOx/Si Interface Formation at Low Temperature Using Plasma-Enhanced Chemical Vapor Deposition, Jpn. J. Appl. Phys., 42, L814-L817, 20030401
  27. Effect of Chemical Composition of SiOx Films on Rapid Formation of Si Nanocrystals Induced by Thermal Plasma Jet Irradiation, Phys. Status Solidi, C7(3-4), 732-734, 2010
  28. Characterization of Interfaces between Chemically-Cleaned or Thermally-Oxidized Germanium and Metals, ECS Trans, 33(6), 253-262, 2010
  29. Formation of Pseudo-Expitaxial Ge Films on Si(100) by Droplet of Ge Microliquid, ECS Trans, 33(6), 165-170, 2010
  30. Control of Grain Growth Using Amorphous Si Strips and Slit Masks Induced by Micro-Thermal-Plasma-Jet Crystallization, 112(18), pp67-70, 20120401
  31. Control of Schottky Barrier Height at Al/Ge Junctions by Ultrathin Layer Insertion, 112(92), pp.53-58, 20120601
  32. Control of Schottky Barrier Height at Al/p-Ge Junctions by Ultrathin Layer Insertion, ECS Trans, 50(9), 449.-457, 2012
  33. Grain Growth Control during Micro-Thermal-Plasma-Jet Irradiation Using Amorphous Si Strips and Slit Masks, ECS Trans, 50(8), 29-34, 2012
  34. Kinetics of thermally oxidation of Ge(100) surface, J. Phys.Conf. Series, 417(1), 2013
  35. Layer Transfer and Simultaneous Activation of Phosphorous Atoms in Silicon Films by Near-Infrared Semiconductor Diode Laser Irradiation, Mat. Res. Soc.Symp. Proc., 1426, 275-280, 2012
  36. Layer Transfer and Simultaneous Crystallization of Amorphous Si Films with Mid-Air Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation, ECS Trans, 50(8), pp. 43-48, 20121001
  37. Electrical characterization of Ge microcrystallites by atomic force microscopy using a conducting probe, THIN SOLID FILMS, 457(1), 103-108, 20040601
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  38. Impact of rapid thermal O-2 anneal on dielectric stack structures of hafnium aluminate and silicon dioxide formed on Si(100), JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(11B), 7831-7836, 200411
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  39. Characterization of interfacial oxide layers in heterostructures of hafnium oxides formed on NH3-nitrided Si(100), JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(11B), 7890-7894, 200411
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  40. Characterization of atom diffusion in polycrystalline Si/SiGe/Si stacked gate, IEICE TRANSACTIONS ON ELECTRONICS, E88C(4), 646-650, 200504
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  41. Application of plasma jet crystallization technique to fabrication of thin-film transistor, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 44(1-7), L108-L110, 2005
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  42. Characterization of germanium nanocrystallites grown on SiO2 by a conductive AFM probe technique, IEICE TRANSACTIONS ON ELECTRONICS, E88C(4), 705-708, 200504
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  43. A new crystallization technique of Si films on glass substrate using thermal plasma jet, APPLIED SURFACE SCIENCE, 244(1-4), 8-11, 20050515
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  44. Formation of microcrystalline germanium (mu c-Ge : H) films from inductively coupled plasma CVD, APPLIED SURFACE SCIENCE, 244(1-4), 12-15, 20050515
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  45. Influence of substrate dc bias on crystallinity of silicon films grown at a high rate from inductively-coupled plasma CVD, APPLIED SURFACE SCIENCE, 244(1-4), 39-42, 20050515
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  46. Control of the nucleation density of Si quantum dots by remote hydrogen plasma treatment, APPLIED SURFACE SCIENCE, 244(1-4), 75-78, 20050515
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  47. Pulsed laser crystallization of very thin silicon films, THIN SOLID FILMS, 487(1-2), 63-66, 20050901
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  48. Crystallization of Si films on glass substrate using thermal plasma jet, THIN SOLID FILMS, 487(1-2), 122-125, 20050901
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  49. Pulsed laser annealing of thin silicon films, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(4A), 2437-2440, 200604
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  50. In-situ observation of rapid crystalline growth induced by excimer laser irradiation to Ge/Si stacked structure, THIN SOLID FILMS, 508(1-2), 53-56, 20060605
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  51. Characterization of electronic charged states of P-doped Si quantum dots using AFM/Kelvin probe, THIN SOLID FILMS, 508(1-2), 186-189, 20060605
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  52. Decay characteristics of electronic charged states of Si quantum dots as evaluated by an AFM/Kelvin probe technique, THIN SOLID FILMS, 508(1-2), 190-194, 20060605
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  53. Crystallization of Si in millisecond time domain induced by thermal plasma jet irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(5B), 4313-4320, 200605
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  54. Analysis of transient temperature profile during thermal plasma jet annealing of si films on quartz substrate, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(5B), 4355-4357, 200605
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  55. Control of substrate surface temperature in millisecond annealing technique using thermal plasma jet, THIN SOLID FILMS, 515(12), 4897-4900, 20070423
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  56. Growth of crystallized ge films from VHF inductively-coupled plasma of H-2-diluted GeH4, THIN SOLID FILMS, 515(12), 4971-4974, 20070423
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  57. Evaluation of dielectric reliability of ultrathin HfSiOxNy in metal-gate capacitors, IEICE TRANSACTIONS ON ELECTRONICS, E90C(5), 962-967, 200705
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  58. Melting and solidification of microcrystalline Si films induced by semiconductor diode laser irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(3B), 1276-1279, 200703
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  59. Characterization of chemical bonding features and defect state density in HfSiOxNy/SiO2 gate stack, MICROELECTRONIC ENGINEERING, 84(9-10), 2386-2389, 2007
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  60. Nucleation study of hydrogenated microcrystalline silicon (mu c-Si : H) films deposited by VHF-ICP, THIN SOLID FILMS, 516(11), 3497-3501, 20080401
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  61. Crystallization of amorphous Ge films induced by semiconductor diode laser annealing, THIN SOLID FILMS, 516(11), 3595-3600, 20080401
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  62. Effect of He addition on the heating characteristics of substrate surface irradiated by Ar thermal plasma jet, THIN SOLID FILMS, 516(11), 3680-3683, 20080401
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  63. In-situ measurement of temperature variation in Si wafer during millisecond rapid thermal annealing induced by thermal plasma jet irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 2460-2463, 200804
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  64. Self-assembling formation of Ni nanodots on SiO2 induced by remote H-2 plasma treatment and their electrical charging characteristics, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 3099-3102, 200804
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  65. Characterization of multistep electron charging and discharging of a silicon quantum dots floating gate by applying pulsed gate biases, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 3103-3106, 200804
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  66. Growth of Si crystalline in SiOx films induced by millisecond rapid thermal annealing using thermal plasma jet, SOLID-STATE ELECTRONICS, 52(3), 377-380, 200803
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  67. Progress on charge distribution in multiply-stacked Si quantum dots/SiO2 structure as evaluated by AFM/KFM, IEICE TRANSACTIONS ON ELECTRONICS, E91C(5), 712-715, 200805
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  68. Formation of Low-Defect-Concentration Polycrystalline Silicon Films by Thermal Plasma Jet Crystallization Technique, JAPANESE JOURNAL OF APPLIED PHYSICS, 47(8), 6949-6952, 200808
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  69. Low temperature high-rate growth of crystalline Ge films on quartz and crystalline Si substrates from VHF inductively-coupled plasma of GeH(4), THIN SOLID FILMS, 517(1), 216-218, 20081103
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  70. Impact of impurity doping into Si quantum dots with Ge core on their electrical charging characteristics, THIN SOLID FILMS, 517(1), 306-308, 20081103
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  71. Millisecond Rapid Thermal Annealing of Si Wafer Induced by High-Power-Density Thermal Plasma Jet Irradiation and Its Application to Ultrashallow Junction Formation, JAPANESE JOURNAL OF APPLIED PHYSICS, 48(4), 200904
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  72. Characterization of interfacial reaction and chemical bonding features of LaOx/HfO2 stack structure formed on thermally-grown SiO2/Si(100), MICROELECTRONIC ENGINEERING, 86(7-9), 1650-1653, 2009
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  73. Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication, APPLIED PHYSICS EXPRESS, 3(6), 2010
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  74. Formation of High-Quality SiO2 and SiO2/Si Interface by Thermal-Plasma-Jet-Induced Millisecond Annealing and Postmetallization Annealing, JAPANESE JOURNAL OF APPLIED PHYSICS, 49(8), 201008
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  75. Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Technique, JAPANESE JOURNAL OF APPLIED PHYSICS, 49(3), 2010
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  76. Activation of B and As in Ultrashallow Junction During Millisecond Annealing Induced by Thermal Plasma Jet Irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS, 49(4), 2010
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  77. Formation mechanism of metal nanodots induced by remote plasma exposure, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 12(3), 626-630, 201003
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  78. Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor Fabrication, JAPANESE JOURNAL OF APPLIED PHYSICS, 50(3), 201103
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  79. Characterization of chemical bonding features at metal/GeO2 Interfaces by X-ray photoelectron spectroscopy, MICROELECTRONIC ENGINEERING, 88(7), 1549-1552, 201107
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  80. Impact of insertion of ultrathin TaOx, layer at the Pt/TiO2 interface on resistive switching characteristics, MICROELECTRONIC ENGINEERING, 88(7), 1152-1154, 201107
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  81. Direct observation of grain growth from molten silicon formed by micro-thermal-plasma-jet irradiation, APPLIED PHYSICS LETTERS, 101(17), 20121022
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  82. Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer, IEICE TRANSACTIONS ON ELECTRONICS, E96C(5), 674-679, 201305
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  83. Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior, IEICE TRANSACTIONS ON ELECTRONICS, E96C(5), 702-707, 201305
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  84. Layer Transfer and Simultaneous Crystallization Technique for Amorphous Si Films with Midair Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation and Its Application to Thin-Film Transistor Fabrication, JAPANESE JOURNAL OF APPLIED PHYSICS, 52(5), 201305
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  85. Leading Wave Crystallization Induced by Micro-Thermal-Plasma-Jet Irradiation of Amorphous Silicon Films, JAPANESE JOURNAL OF APPLIED PHYSICS, 52(5), 201305
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  86. Investigation of silicon grain structure and electrical characteristics of TFTs fabricated using different crystallized silicon films by atmospheric pressure micro-thermal-plasma-jet irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS, 53(3), 201403
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  87. Highly-Crystallized Ge:H Film Growth from GeH4 Very High Frequency Inductively-Coupled Plasma: Crystalline Nucleation Initiated by Ni Nanodots, JAPANESE JOURNAL OF APPLIED PHYSICS, 52(11), 201311
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  88. Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide Resistive Random Access Memories with Ti-Based Electrodes, JAPANESE JOURNAL OF APPLIED PHYSICS, 52(11), 201311
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  89. Fabricating metal-oxide-semiconductor field-effect transistors on a polyethylene terephthalate substrate by applying low-temperature layer transfer of a single-crystalline silicon layer by meniscus force, APPLIED PHYSICS LETTERS, 103(23), 20131202
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  90. Low-temperature layer transfer of midair cavity silicon films to a poly(ethylene terephthalate) substrate by meniscus force, JAPANESE JOURNAL OF APPLIED PHYSICS, 53(1), 201401
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  91. A technique for local area transfer and simultaneous crystallization of amorphous silicon layer with midair cavity by irradiation with near-infrared semiconductor diode laser, JAPANESE JOURNAL OF APPLIED PHYSICS, 53(4), 201404
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  92. Fabrication of N-channel single crystalline silicon (100) thin-film transistors on glass substrate by meniscus force-mediated layer transfer technique, JAPANESE JOURNAL OF APPLIED PHYSICS, 53(10), 201410
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  93. Improvement in Characteristic Variability of TFTs Using Grain Growth Control by Micro Thermal Plasma Jet Irradiation on a-Si Strips, JOURNAL OF DISPLAY TECHNOLOGY, 10(11), 950-955, 201411
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  94. Investigations on crack generation mechanism and crack reduction by buffer layer insertion in thermal-plasma-jet crystallization of amorphous silicon films on glass substrate, JAPANESE JOURNAL OF APPLIED PHYSICS, 54(1), 201501
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  95. Meniscus-force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substrates, JAPANESE JOURNAL OF APPLIED PHYSICS, 54(4), 04DA08-1-04DA08-5, 201504
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  96. High-efficiency impurity activation by precise control of cooling rate during atmospheric pressure thermal plasma jet annealing of 4H-SiC wafer, JAPANESE JOURNAL OF APPLIED PHYSICS, 54(6), 06GC01-1-06GC01-8, 201506
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  97. Pre-Amorphization and Low-Temperature Implantation for Efficient Activation of Implanted As in Ge(100), ECS Trans, 64(6), 423-429, 20141001
  98. Fabricating High-Performance Silicon Thin-Film Transistor by Meniscus Force Mediated Layer Transfer Technique, ECS Trans, 64(10), 17-22, 20141001
  99. Effect of Grain Growth Control by Atmospheric Micro-Thermal- Plasma-Jet Crystallization of Amorphous Silicon Strips on TFT Characteristics, ECS Trans, 64(10), 23-29, 20141001
  100. Formation of silicon-on-insulator layer with midair cavity for meniscus force-mediated layer transfer and high-performance transistor fabrication on glass, JAPANESE JOURNAL OF APPLIED PHYSICS, 54(8), 086503-1-086503-7, 201508
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  101. High-temperature and high-speed oxidation of 4H-SiC by atmospheric pressure thermal plasma jet, JAPANESE JOURNAL OF APPLIED PHYSICS, 56(4), 201704
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  102. Generation of ultra high-power thermal plasma jet and its application to crystallization of amorphous silicon films, JAPANESE JOURNAL OF APPLIED PHYSICS, 56(6), 201706
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  103. Extremely high-power-density atmospheric-pressure thermal plasma jet generated by the nitrogen-boosted effect, JAPANESE JOURNAL OF APPLIED PHYSICS, 57(6), 06JH01-1-06JH01-4, 201806
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  104. Estimation of Phosphorus-implanted 4H-SiC Layer Recrystallization by EBSD Pattern Analysis, Mat. Sci. Forum, 821-823, 391-394, 2015
  105. Properties of Al Ohmic Contacts to n-type 4H-SiC Employing a Phosphorus-Doped and Crystallized Amorphous-Silicon Interlayer, Mat. Sci. Forum, 778-780, 649-652, 2014
  106. XPS Study of Energy Band Alignment between Hf-La Oxides and Si(100), Trans. Mat. Res. Soc. Jpn.,, 38(3), 353-357, 2013
  107. Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM Diodes, ECS Trans., 58(9), 293-300, 2013
  108. Determination of Energy Band Alignment in Ultrathin Hf-based Oxide/Pt System, J. Phys. Conf. Ser.,, 417(1)
  109. Characterization of Ultrathin Ta-oxide Films Formed on Ge(100) by ALD and Layer-by-Layer Methods, J. Phys,Conf. Ser.,, 417(1), 2013
  110. Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories, IEICE Trans. on Electronics, E92-C(5), 616-619, 2009
  111. Surface Potential Changes Induced by Physisorption of Si-tagged Protein A on HF-last Si(100) and Thermally Grown SiO2 surface, ECS Trans.,, 19(22), 35-43, 2009
  112. Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique, Trans. MRS-J.,, 34(2), 309-312, 2009
  113. Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Annealing and Its Application to Floating Gate Memory, ECS Trans.,, 16(9), 177-182, 2008
  114. In-situ Monitoring of Si Wafer Temperature during Millisecond Rapid Thermal Annealing, ECS Trans.,, 13(1), 31-36, 2008
  115. Evaluation of Chemical Bonding Features and Resistance Switching Behaviors of Ultrathin Si Oxide Dielectric Sandwiched Between Pt Electrodes, JAPANESE JOURNAL OF APPLIED PHYSICS, 51(6S), 2012
  116. Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO2, ECS. Trans.,, 16(10), 255-260, 2008
  117. Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots, Solid State Phenomena, 121-123, 557-560, 2007
  118. Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique, Mat. Sci. Forum, 561-565, 1213-1216, 2007
  119. High Rate Growth of Highly-Crystallized Ge Films on Quartz from VHF Inductively-Coupled Plasma of GeH4 + H2, Mat. Sci. Forum, 561-565, 1209-1212, 2007
  120. Electrical Characteristics of Lightly-Doped Si Films Crsytallized by Thermal Plasma Jet Irradiation, Trans. Mat. Res. Soc. Jpn.,, 32, 465-468, 2007
  121. Fabrication of Polycrystalline Si Thin Film Transistor Using Plasma Jet Crystalliztion Technique, Trans. Mat. Res. Soc. Jpn.,, 30, 283-286, 2005
  122. Study of Charged States of Si Quantum Dots with Ge Core, Electrochem. Soc. Trans.,, 3(7), 257-262, 2006
  123. Fabrication of Multiply-Stacked Si Quantum Dots for Floating Gate MOS Devices, Trans. Mat. Res. Soc. Jpn.,, 31, 133-136, 2006
  124. Multistep Electron Charging to and Discharging from Silicon-Quantum-Dots Floating Gate in nMOSFETs, Trans. Mat. Res. Soc. Jpn.,, 31, 137-140, 2006
  125. Characterization of FUSI-PtSi Formed on Ultrathin HfO2/Si(100) by Photoelectron Spectroscopy, Trans. Mat. Res. Soc. Jpn.,, 31, 145-148, 2006
  126. Nitridation of Ge(100) Surfaces by Vacuum-ultra violet (VUV) Irradiation in NH3 Ambience, Trans. Mat. Res. Soc. Jpn.,, 31, 153-156, 2006
  127. Impact of Nitrogen Incorporation into Yittrium Oxide on Chemical Bonding Features and Electrical Properties, Trans. Mat. Res. Soc. Jpn.,, 31, 157-160, 2006
  128. Photoemission Study of Ultrathin HfSiON/Si(100) Systems, Trans. Mat. Res. Soc. Jpn.,, 31, 125-128, 2006
  129. Photoemission Study of Ultrathin GeO2/Ge Heterostructures Formed by UV-O3 Oxidation, J. of Surf. Sci. and Nanotech.,, 4, 174-179, 2006
  130. Electrical Characterization of HfAlOx/SiON Dielectric Gate Capacitors, Trans. Mat. Res. Soc. Jpn.,, 30, 205-208, 2005
  131. Characterization of Charge Trapping and Dielectric Breakdown of HfAlOX/SiON Dielectric Gate Stack, Electrochem. Soc. Trans.,, 1(1), 163-172, 2005
  132. Single-grain Si TFTs with ECR-PECVD gate SiO2, IEEE Trans. Electron Devices,, 51, 500-502, 2004
  133. Defect control Process Technologies for High-Performance Polycrystalline Si Thin-Film Transistor Fabrication, Solid State Phenomena, 93, 49-54, 2003
  134. Analysis of free-carrier optical absorption used for characterization of microcrystalline silicon films, Solar Energy Mat. & Solar Cells, 66, 389-395, 2001
  135. Characterization of pulsed laser crystallization of silicon thin film, Solar Energy Mat. & Solar Cells, 66, 381-387, 2001
  136. Reduction of defects of polycrystalline silicon thin films by heat treatment with high-pressure H2O vapor, Solar Energy Mat. & Solar Cells, 66, 577-583, 2001
  137. Stochastic Electron Acceleration by an Electron Cyclotron Wave Propagating in an Inhomogeneous Magnetic Field, J. Phys. Soc. Jpn.,, 65(9), 2860-2866, 1996
  138. New Microwave Launcher for Producing ECR Plasmas without Window Contamination I. Excitation of Electron Cyclotron Wave, JAPANESE JOURNAL OF APPLIED PHYSICS, 32(4), 1818-1821, 1993
  139. Overdense Plasma Production Using Electron Cyclotron Waves, J. Phys. Soc. Jpn.,, 60(5), 1600-1607, 1991
  140. Single-Crystalline Si-CMOS Circuit Fabrication on Polyethylene Terephthalate Substrate by Meniscus Force-Mediated Layer Transfer, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 7(1), 943-948, 20190603
    Link to Paper Search Results by DOI
  141. In situ monitoring to visualize temperature distribution in molten silicon region formed under atmospheric pressure thermal plasma jet irradiation, Applied Physics Express, 13(1), 015507-1-015507-5, 20191203
  142. Development of high-yield layer transfer process of single-crystalline silicon thin films on plastic substrate and its application to multi-functional device integration, JAPANESE JOURNAL OF APPLIED PHYSICS, 59(SGGJ02), SGGJ02-1-SGGJ02-8, 20200401
    Link to Paper Search Results by DOI
  143. Band-energy estimation on silicon cap annealed 4H-SiC surface using hard X-ray photoelectron spectroscopy, SURFACE SCIENCE, 696, 202006
    Link to Paper Search Results by DOI
  144. Precise measurement of the temperature of a silicon wafer by an optical-interference contactless thermometer during rapid plasma processing, JOURNAL OF APPLIED PHYSICS, 127(20), 20200529
    Link to Paper Search Results by DOI
  145. Large area annealing by magnetic field scanning of atmospheric pressure thermal plasma beam, JAPANESE JOURNAL OF APPLIED PHYSICS, 59, 202006
    Link to Paper Search Results by DOI
  146. Direct observation of ultra-rapid solid phase crystallization of amorphous silicon films irradiated by micro-thermal-plasma-jet, Materials Science in Semiconductor Processing, 121, 105357-1-105357-9, 20200820
  147. Investigation on characteristics of millisecond solid phase crystallized silicon films annealed by atmospheric pressure DC arc discharge micro-thermal-plasma-jet and their application to bottom-gate thin film transistors fabrication, Japanese Journal of Applied Physics, 60(10), 105502-1-105502-7, 202110
  148. Direct observation of three-dimensional transient temperature distribution in SiC Schottky barrier diode under operation by optical-interference contactless thermometry imaging, APPLIED PHYSICS EXPRESS, 15(2), 20220201
    Link to Paper Search Results by DOI

Publications such as books

  1. 2004, THIN FILM TRANSISTORS Materials and processes Volume 2 Polycrystalline Silicon Thin Film Transistors , Kluwer Academic Publisher (Dordrecht), 2004, Scholarly Book, Cocompilation

Invited Lecture, Oral Presentation, Poster Presentation

  1. Interfacial Thermal Resistance Measurement at Polymer/Semiconductor Interface Using Optical-Interference Contactless Thermometry (OICT), J. Yu, H. Hanafusa, S. Higashi, 4th China International Youth Conference on Electrical Engineering (CIYCEE2023), 2023/12/08, Without Invitation, English, Chengdu, China
  2. Direct Measurement of silicon wafer surface temperature during plasma processing using Optical-Interference Contactless Thermometry (OICT), R. Goto, J. Yu, H. Hanafusa, and S. Higashi, 44th International Symposium on Dry Process (DPS2023), 2023/11/21, Without Invitation, English, Nagoya, Japan
  3. Atmospheric-Pressure Reactive Thermal Plasma Jet Technology for Decarbonization of Semiconductor Manufacturing, S. Higashi, H. Kato, J. Yu, K. Matsumoto, and H. Hanafusa, 244th ECS Meeting, 2023/10/08, With Invitation, English, Gothenburg, Sweden
  4. MEASUREMENT OF TRANSIENT HEAT TRANSFER ACROSS ORGANIC/SEMICONDUCTOR INTERFACE USING OPTICAL INTERFERENCE CONTACTLESS THERMOMETRY (OICT), J. Yu, R. Goto, H. Hanafusa, S. Higashi, 33rd International Symposium on Transport Phenomena (ISTP-33), 2023/09/24, Without Invitation, English, Kumamoto, Japan
  5. Measurement of Heat Dissipation between SiC and Thermal Interface Material in Power Device Packaging Based on Optical-Interference Contactless Thermometry, J. Yu, R. Goto, H. Hanafusa, S. Higashi, 2023 International Conference on Solid State Devices and Materials (SSDM2023), 2023/09/05, Without Invitation, English, Nagoya, Japan
  6. Extraction of Organic/Semiconductor Interfacial Thermal Resisitance based on Optical Interference Contactless Thermometry (OICT), J. Yu, H. Hanafusa, and S. Higashi, 2023 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD2023), 2023/07/10, Without Invitation, English, Yokohama, Japan
  7. Application of Atmospheric Pressure Thermal Plasma Jet for Semiconductor Device Fabrication, S. Higashi, H. Kato, H. Hanafusa, International Conference on Processing & Manufacturing of advanced Materials (THERMEC'2023), 2023/07/02, With Invitation, English, Vienna, Austria
  8. Generation of Reactive Atmospheric-Pressure Micro-Thermal-Plasma-Jet and Its Application to Organic Film Etching, H. Kato, H. Hanafusa, T. Sato, S. Hayashi, S. Higashi, 43rd International Symposium on Dry Process (DPS2022), 2022/11/24, Without Invitation, English, Osaka, Japan+ｵﾝﾗｲﾝ
  9. Atmospheric Pressure Thermal Plasma Jet Technology for Semiconductor Device Manufacturing, S. Higashi, A. Kameda, H. Kato, and H. Hanafusa, 15th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 16th International Conference on Plasma-Nano Technology & Science (ISPlasma2023/IC-PLANTS2023), 2023/03/05, With Invitation, English, Gifu, Japan
  10. 3-D Imaging of Temperature Variations in 4H-SiC Schottky Barrier Diode under Operation based on Optical Interference Contactless Thermometry, S. Higashi, A. Kameda, H. Kato, and H. Hanafusa, 13th International Workshop on New Group IV Semiconductor Nanoelectronics, 2023/01/23, With Invitation, English, Sendai, Japan
  11. Single Crystalline Silicon CMOSFETs on Plastic and Their Application to Highly Sensitive Virus Detection System, S. Higashi, R. Sumichika, T. Suehiro, H. Hanafusa, and Y. Okamura, 29th International Display Workshops (IDW'22), 2022/12/14, With Invitation, English, Fukuoka, Japan
  12. Ultra-fast Etching of Photoresist by Reactive Atmospheric-pressure Thermal Plasma Jet, H. Kato, H. Hanafusa, T. Sato, S. Higashi, 2022 International Symposium on Semiconductor Manufacturing (ISSM2022), 2022/12/12, Without Invitation, English, KFC Hall, Tokyo
  13. Research on Real-Time Temperature Measurement for SiC Wafer during Ultra-Rapid Thermal Annealing Based on Optical-Interference Contactless Thermometry (OICT), J. Yu, K. Fujimoto, K. Matsuguchi, T. Sato, H. Hanafusa and S. Higashi, International Workshop on Nanodevice Technologies 2022,in Memory of M. Hirose (IWNT2022), 2022/03/11, Without Invitation, English, Hiroshima, Japan
  14. Direct Imaging of Semiconductor Device Self-heating Based on Optical Interference Contactless Thermometry, S. Higashi, International Workshop on Nanodevice Technologies 2022,in Memory of M. Hirose (IWNT2022), 2022/03/11, With Invitation, English, Hiroshima,Japan
  15. Transient Temperature Imaging in SiC Wafer During Thermal-Plasma-Jet Annealing Based on Optical-Interference Contactless Thermometry, J. Yu, K. Fujimoto, K. Matsuguchi, T. Sato, H. Hanafusa and S. Higashi, 2021/11/11, Without Invitation, English
  16. Automatic Temperature Measurement of SiC Wafer During Millisecond Thermal Processing Based on Optical-Interference Contactless Thermometry (OICT), Jiawen Yu, Keiya Fujimoto, Kotaro Matsuguchi, Takuma Sato, Hiroaki Hanafusa, Seiichiro Higashi, 2021/09/10, Without Invitation, English
  17. Growth of High Crystallinity Silicon Films by Intermittent Pulse Heating assisted Plasma Enhanced Chemical Vapor Deposition, T. Nojima, H. Hanafusa, T. Sato, S. Hayashi, S. Higashi, 42nd International Symposium on Dry Process (DPS2021), 2021/11/18, Without Invitation, English, Online Symposium
  18. Visualization of Transient Internal Temperature Changes during SiC-Schottky Barrier Diode Operation using Optical-Interference Contactless Thermometry, K. Fujimoto, H. Hanafusa, T. Sato, S. Higashi, 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020.2021), 2021/10/24, Without Invitation, English, Tours, France and Virtual conference
  19. Millisecond Annealing by Atmospheric Pressure Thermal Plasma Jet and Direct Imaging of Temperature Distribution Using Optical Interference Contactless Thermometry (OICT), S. Higashi, 240th ECS Meeting, 2021/10/10, With Invitation, English, Digital Meeting
  20. Application of Millisecond Solid Phase Crystallization of Silicon Films Induced by Micro-Thermal-Plasma-Jet to Bottom-Gate Thin-Film Transistors, Nguyen ThiKhanh Hoa, Hiroaki Hanafusa, Seiichiro Higashi, 2021/09/21, Without Invitation, English
  21. Effects of Crystallization Conditions on the Electrical Characteristics of P-type Ge TFTs Formed by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation, T. Sato, H. Hanafusa, S. Higashi, 2021 International Conference on Solid State Devices and Materials(SSDM2021), 2021/09/06, Without Invitation, English, ALL-VIRTUAL Conference
  22. Characteristics of Millisecond Solid Phase Crystallized Silicon Films Formed by Micro-Thermal-Plasma-Jet and Their Application to Bottom-Gate Thin Film Transistor, Hoa ThiKhanh Nguyen , Hiroaki Hanafusa, Ryuji Kawakita, Kazuki Segawa, Seiichiro Higashi, 2021 International Conference on Solid State Devices and Materials(SSDM2021), 2021/09/06, Without Invitation, English, ALL-VIRTUAL Conference
  23. Defect Control in Quasi Single-crystalline Silicon Strips on Insulator Formed by Atmospheric Pressure Thermal Plasma Jet, S. Higashi, International Conference on Processing & Manufacturing of advanced Materials (Thermec'2021), 2021/06/01, With Invitation, English, Virtual Conference
  24. Characteristics of Millisecond Solid Phase Crystallization of Phosphorus Doped Silicon Film Annealed by Thermal-Plasma-Jet Irradiation, Nguyen ThiKhanh Hoa, Hiroaki Hanafusa, Seiichiro Higashi, 2021/03/16, Without Invitation, English
  25. Investigation on millisecond solid phase crystallization of amorphous silicon films induced by micro thermal plasma jet, Hoa ThiKhanh Nguyen, Hiroaki Hanafusa, Yuri Mizukawa, Shohei Hayashi, Seichiiro Higashi, 2020/10/22, Without Invitation, English, Online virtual meeting
  26. Characteristics of Rapidly Solid Phase Crystallized Amorphous Silicon Films Formed by Micro-Thermal-Plasma Jet Irradiation, Hoa ThiKhanh Nguyen, H. Hanafusa, Y. Mizukawa, S. Hayashi, S. Higashi, 2020 International Conference on Solid State Devices and Materials (SSDM2020), 2020/09/27, Without Invitation, English, ALL-VIRTUAL conference
  27. Investigation on Rapid Solid Phase Crystallization of Amorphous Silicon Films Induced by Micro-Thermal-Plasma Jet, Nguyen ThiKhanh Hoa, Yuri Mizukawa, Hiroaki Hanafusa, Seichiiro Higashi, 2020/09/08, Without Invitation, English
  28. Investigation the solid phase crystallization kinetics at the high-temperature region by annealing amorphous silicon using micro-thermal-plasma jet, 2020/03/12, Without Invitation, Japanese
  29. Direct Observation of Ultra-rapid Solid Phase Crystallization of Amorphous Silicon Films Irradiated by Micro-Thermal Plasma Jet, S. Higashi, 8th International Symposium on Control of Semiconductor Interfaces(ISCSI-VIII), 2019/11/27, With Invitation, English, Sendai, Japan
  30. Measurement of the Thermo-Optic Coefficient and Verification of Absolute Temperature for Plasma Processing Application of Optical Interference Contactless Thermometer of Silicon Wafer, A. Kameda, H. Hanafusa and S. Higashi, 41st International Symposium on Dry Process (DPS2019), 2019/11/21, Without Invitation, English, Hiroshima, Japan
  31. Precise determination of Temperature Distribution in Molten on Insulating Substrate Silicon Formed by Atmospheric Pressure Thermal Plasma Jet Annealing, Y. Mizukawa, A. Kameda, H. Hanafusa and S. Higashi, 41st International Symposium on Dry Process (DPS2019), 2019/11/21, Without Invitation, English, Hiroshima, Japan
  32. Large Area Annealing by Magnetic Field Scanning of Atmospheric Pressure Thermal Plasma Beam, K. Segawa, H. Hanafusa, Y. Mizukawa and S. Higashi, 41st International Symposium on Dry Process (DPS2019), 2019/11/21, Without Invitation, English, Hiroshima, Japan
  33. Single-Crystalline Silicon CMOS Fabrication on PET By Meniscus Force Mediated Layer Transfer Technique, S. Higashi, 236th Electrochem. Soc. (ECS) Meeting, 2019/10/13, With Invitation, English, Atlanta, GA, USA
  34. Investigation on Electrical Characteristics of 4H-SiC Schottky-Barrier-Diodes after Silicon-Cap-Annealing, D. Todo, H. Hanafusa, S. Higashi, International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), 2019/09/29, Without Invitation, English, Kyoto, Japan
  35. Direct observation of phase transformation and transient reflectivity of amorphous silicon film during micro-thermal plasma jet irradiation, Nguyen ThiKhanh Hoa, Yuri Mizukawa, Hiroaki Hanafusa, Seichiiro Higashi, 2019/09/18, Without Invitation, English
  36. Two-dimensional Visualization of Temperature Distribution in Molten Region of a-Si Film during Atmospheric Pressure Thermal Plasma Jet Annealing, Y. Mizukawa, A. Kameda, H. Hanafusa and S. Higashi, 2019 International Conference on Solid State Devices and Materials (SSDM2019), 2019/09/02, Without Invitation, English, Nagoya, Japan
  37. Development of High Yield Layer Transfer Process of Single Crystalline Silicon Thin Film on Plastic Substrate and Its Application to Floating Gate Memory Fabrication, T. Hirano, R. Mizukami, T. Yamashita, F. Kondo, H. Hanafusa, Y. Mizukawa and S. Higashi, 2019 International Conference on Solid State Devices and Materials (SSDM2019), 2019/09/02, Without Invitation, English, Nagoya, Japan
  38. Generation of Atmospheric Pressure Thermal Plasma Beam by Nitrogen Addition to Ar DC Arc Discharge, K. Segawa, H. Hanafusa, Y. Mizukawa, and S. Higashi, 2019 Asia-Pacific Workshop Fundamentals and Applications of Advanced Semiconductor Dev. (AWAD2019), 2019/07/01, Without Invitation, English, Busan, Korea
  39. Visualization of Temperature Field in Molten Silicon Formed by Thermal Plasma Jet Induced Ultra-rapid Annealing, S. Higashi, 2019 Int. Thin-Film Transistor Conf. (ITC2019), 2019/02/28, With Invitation, English, Naha, Japan
  40. Ultra-rapid Phase Transformation of Amorphous Germanium Thin-Films on Insulator Induced by Atmospheric Pressure Thermal Plasma Jet Irradiatio, S. Higash, 12th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2018/12/06, With Invitation, English, Sendai, Japan
  41. Melting and Crystallization of Amorphous Germanium Films on Insulating Substrate By Atmospheric Pressure Micro-Thermal-Plasma-Jet,, S. Higash, H. Harada, and T. Nakatani, 2018 ECS and SMEQ Joint Int. Meeting, 2018/09/30, Without Invitation, English, Cancun, Mexico
  42. Meniscus Force Mediated Transfer of Single-Crystalline Silicon Thin Films on PET Substrate and Its Application to CMOS Circuit Fabrication, S. Higashi, 18th International Meeting on Information Display (IMID2018), 2018/08/28, With Invitation, English, Busan, Korea
  43. Nitrogen-boosted Atmospheric Pressure Thermal-Plasma-Jet Generation and Its Application to Crystallization of Amorphous Silicon Films on Flexible Glass, S. Higashi, Int. Thin-Film Transistor Conf. (ITC2018), 2018/02/28, With Invitation, English, Guangzhou, China
  44. Low Temperature Formation of SiNx Encapsulation Films by Remote Plasma Enhanced Chemical Vapor Deposition, S. Higashi, M. Wei, T. Kanamaru, 24th Int.Display Workshops (IDW'17), 2017/12/06, Without Invitation, English, Sapporo, Japan
  45. Atmospheric pressure micro-thermal-plasma-jet irradiation on amorphous germaniumstrips and its application to thin film transistor fabrication, S. Higashi, H. Harada, T. Nakatani, 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016), 2016/07/04, Without Invitation, English, Hakodate, Japan
  46. Activation of Impurity Atoms in 4H-SiC Wafer by Atmospheric Pressure Thermal Plasma Jet Irradiation, S. Higashi, 16th International Workshop on Junction Technology (IWJT2016 ), 2016/05/09, With Invitation, English, Shanghai, China
  47. Silicon CMOS on glass and plastic - Crystallization and layer transfer approaches -, S. Higashi, Semiconductor Tech. Ultra Large Scale Integrated Circuits and Thin Film Transistors V, 2015/06/14, With Invitation, English
  48. Atmospheric Pressure Plasma Processing and Layer Transfer Technique for Thin-Film Device Fabrication on Glass and Plastic Substrates, S. Higashi, 2014 Int. Workshop Junction Tech. (IWJT-2014), 2014/05/18, With Invitation, English, Shanghai, China
  49. Low-Temperature Formation of Single-Crystalline Silicon on Glass and Plastic Substrates and Its Application to MOSFET Fabrication, S. Higashi, K. Sakaike, S. Hayashi, S. Morisaki, M. Akazawa, S. Nakamura, and T. Fukunaga, Int. Display Workshops (IDW'13), 2013/12/04, With Invitation, English, Sapporo, Japan
  50. Growth Control of Crystalline Silicon during Microsecond Phase Transformation and Its Application to Thin-Film Transistor Fabrication, S. Higashi, S. Hayashi, S. Morisaki, and Y. Fujita, AMFPD13, 2013/06/26, With Invitation, English, Kyoto, Japan
  51. Application of Atmospheric Pressure Micro-Thermal-Plasma-Jet to Ultra Rapid Thermal Annealing for Semiconductor Device Fabrication, S. Higashi, Int. Workshop Junction Tech. (IWJT-2012), 2012/05/14, With Invitation, English, Shanghai, China
  52. Rapid Thermal Annealing by Atmospheric Pressure Micro-thermal–Plasma–jet and Its Application to Thin FilmTransistor Fabrication –Crystallization Doping, and Reliability Improvement, S. Higashi, 2012 Mat. Res. Soc. Spring Meeting, 2012/04/09, With Invitation, English, San Francisco, USA
  53. Fabrication of High Performance TFTs by Atmospheric Pressure Micro-thermal-plasma-jet Induced Lateral Crystallization Technique, S. Higashi, S. Hayashi, Y. Nishida, and R. Matsubara, 2011 Mat. Res. Soc. Spring Meeting, 2011/04/25, Without Invitation, English, San Francisco, USA
  54. Millisecond Annealing Induced by Atmospheric Pressure Thermal Plasma Jet Irradiation and Its Application to Ultra Shallow Junction Formation, S. Higashi, 2010 Int. Workshop Junction Tech. (IWJT-2010), 2010/05/10, With Invitation, English, Shanghai, China
  55. Control of Growth Orientation during Rapid Solidification of Si Microliquid, S. Higashi, N. Koba, T. Matsumoto, and S. Miyazaki, 23rd Int. Conf. Amorphous Nanocrystalline Semiconductors (ICANS23), 2009/08/23, Without Invitation, English, Utrecht, Netherlands
  56. Millisecond Thermal Processing for TFT and ULSI, S. Higashi, Semiconductor Tech. Ultra Large Scale Integrated Circuits and Thin Film Transistors II, 2009/07/05, With Invitation, English, Xi'an,China
  57. Application of Thermal Plasma Jet to Crystallization of Amorphous Si Films on Glass Substrate and Thin Film Transistor Fabrication, S. Higashi, 6th Asian-European Int. Conf. Plasma Surf. Eng. (AEPSE 2007) Workshop on Flat-panel and Flexible Devices, 2007/09/28, With Invitation, English, Nagasaki, Japan
  58. Ultrarapid thermal annealing induced by DC arc discharge plasma jet its application, S. Higashi, H. Kaku, T. Okada, H. Murakami, and S. Miyazaki, 5th Int. Symp. Nanotechnol. JAPAN NANO 2007, 2007/02/20, Without Invitation, English, Tokyo, Japan
  59. Ultrarapid Thermal Annealing Induced by DC Arc Discharge Plasma Jet Irradiation, S. Higashi, H. Kaku, T. Okada, T. Yorimoto, H. Murakami, and S. Miyazaki, Fifth Hiroshima Int. Workshop Nanoelectronics for Tera-Bit Information Processing, 2007/01/29, Without Invitation, English, Tokyo, Japan
  60. Comparison of Defect Densities in Excimer Laser and Thermal Plasma Jet Crystallized Si Films, S. Higashi, T. Yorimoto, T. Okada, H. Kaku, H. Murakami, and S. Miyazaki, 3rd Int. TFT Conf., 2007/01/25, Without Invitation, English, Rome, Italy
  61. Ultrarapid Thermal Annealing Induced by Plasma Jet Irradiation and Its Application to Thin Film Transistor Fabrication, S. Higashi, H. Kaku, T. Okada, H. Murakami, and S. Miyazaki, Int. 21st Century COE Symp. Atomistic Fabrication Tech., 2006/10/19, Without Invitation, English, Osaka, Japan
  62. Rapid Thermal Annealing Technique Using Thermal Plasma Jet and Its Application to Thin Film Transistor Fabrication, S. Higashi, 12th Int. Display Workshop/Asia Display 2005, 2005/12/06, With Invitation, English, Takamatsu, Japan
  63. Formation of Si Nano-Crystals by Millisecond Annealing of SiOx Films using Thermal Plasma Jet, S. Higashi, T. Okada, N. Fujii, N. Koba, H. Murakami, and S. Miyazaki, Fourth Hiroshima Int. Workshop Nanoelectronics Tera-Bit Information Processing, 2005/09/16, Without Invitation, English, Hiroshima, Japan
  64. Rapid Thermal Annealing of Thin Films in Millisecond Time Domain Using Thermal Plasma Jet, S. Higashi, AM-LCD 05, 2005/07/06, With Invitation, English, Kanazawa, Japan
  65. Crystallization of Amorphous Si Films on Glass Substrate Using Plasma Jet and Its Application to Thin Film Transistor Fabrication, S. Higashi, H. Kaku, T. Okada, H. Taniguchi, H. Murakami, and S. Miyazaki, 3rd Hiroshima Int. Workshop Nanoelectronics Tera-Bit Information Processing, 2004/12/06, Without Invitation, English, Hiroshima, Japan
  66. Crystallization of Si Films on Glass Substrate Using Thermal Plasma Jet, S. Higashi, H. Kaku, H. Taniguchi, H. Murakami, and S. Miyazaki, Int. Conf. Polycrystalline Semiconductors 2004 (POLYSE), 2004/09/05, Without Invitation, English, Potsdam, Germany
  67. Crystallization of Si Thin Film Using Thermal Plasma Jet and Its Application to Thin-Film Transistor Fabrication, S. Higashi, H. Kaku, H. Murakami, S. Miyazaki, M. Asami, H. Watakabe, N. Ando, and T. Sameshima, AM-LCD 04, 2004/08/25, Without Invitation, English, Tokyo Japan
  68. Interface – The Key to High-Performance Poly-Si TFT Fabrication, S. Higashi, D. Abe, K. Miyashita, T. Kawamura, S. Inoue, and T. Shimoda, 2003/05/18, With Invitation, English, Baltimore USA
  69. Defect control Process Technologies for High-Performance Polycrystalline Si Thin-Film Transistor Fabrication,, S. Higashi, D. Abe, Y. Hiroshima, K. Miyashita, T. Kawamura, S. Inoue, and T. Shimoda, 7th Int. Conf. Polycrystalline Semiconductors VII (POLYSE VII), 2002/09/10, Without Invitation, English, Nara, Japan
  70. Effect of SiO2/Si Interface Quality on the Performance of Polycrystalline Si Thin-Film Transistor, S. Higashi, D. Abe, Y. Hiroshima, K. Miyashita, T. Kawamura, S. Inoue, and T. Shimoda, AM-LCD 02, 2002/07/10, Without Invitation, English, Tokyo, Japan
  71. Low Temperature Process Technologies and Their Application to Polycrystalline Si Thin-Film Transistor Fabrication, S. Higashi, D. Abe, S. Inoue, and T. Shimoda, AM-LCD 01, 2001/07/11, Without Invitation, English, Tokyo, Japan
  72. Pulsed-Laser-Induced Microcrystallization and Amorphization of Silicon Thin Films, S. Higashi, S. Inoue, T. Shimoda and T. Sameshima, AM-LCD 01, 2001/07/11, Without Invitation, English, Tokyo, Japan
  73. Low Temperature Process Technologies for The Next Generation High Performance Polycrystalline Silicon Thin-Film Transistors, S. Higashi, D. Abe, S. Inoue and T. Shimoda, Mat. Res. Soc. Symp., 2001/04/16, With Invitation, English, San Francisco, USA
  74. Low Temperature Process Technologies and "Process Integration," for High Performance Polycrystalline Silicon Thin-Film Transistors, S. Higashi, Electrochem. Soc. Proc, 2000/10/23, With Invitation, English, Phoenix, USA
  75. Low Temperature Formation of Device Quality MOS Interface Using SiO Evaporation in Oxygen Radical Atmosphere, S. Higashi, D. Abe, Y. Tsunoda and T. Sameshima, Tech. Pap. AM-LCD 2000, 2000/07/12, Without Invitation, English, Tokyo, Japan
  76. Electrical Properties of Excimer Laser Crystallized Polycrystalline Silicon Films, S. Higashi, Tech. Pap. AM-LCD 99, 1999/07/14, With Invitation, English, Tokyo, Japan
  77. A 1.8-in. Poly-Si TFT-LCD for HDTV Projectors with a 5-V Fully Integrated Driver, S. Higashi, Y. Matsueda, S. Takenaka, M. Miyasaka, I. Yudasaka, and H. Ohshima, Society for Information Display 95, 1995/05/16, Without Invitation, English, Orlando, USA

Patented

  1. Patent, JP4072625, 2008/02/01

External Funds

Acceptance Results of Competitive Funds

  1. Funding Program for Next Generation World-Leading Researchers, 2011/02/10, 2014/03/31
  2. KAKENHI, Control of Electronic Properties of One-Dimensionally Self-Aligned Si-Ge based Quantum Dots and Its Electroluminescence, 2009, 2012
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  3. KAKENHI, The fabrication of super atom structure using Si based self-assembled quantum dots and its electron state control, 2003, 2005
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