MINORU FUJISHIMA

Last Updated :2024/10/01

Affiliations, Positions
Graduate School of Advanced Science and Engineering, Professor
Web Site
E-mail
fuji@hiroshima-u.ac.jp
Self-introduction
Device modeling, circuit design, system architecture for millimeter-wave and terahrtz CMOS circuits are studied.

Basic Information

Academic Degrees

  • Ph.D., The University of Tokyo

Educational Activity

  • [Bachelor Degree Program] School of Engineering : Cluster 2(Electrical, Electronic and Systems Engineering) : Program of Electronic Devices and Systems
  • [Master's Program] Graduate School of Advanced Science and Engineering : Division of Advanced Science and Engineering : Quantum Matter Program
  • [Doctoral Program] Graduate School of Advanced Science and Engineering : Division of Advanced Science and Engineering : Quantum Matter Program

Research Fields

  • Engineering;Electrical and electronic engineering;Measurement engineering

Research Keywords

  • millimeter wave
  • terahrtz
  • CMOS
  • device modeling
  • circuit design
  • microwave
  • wireless
  • sensing

Educational Activity

Course in Charge

  1. 2024, Graduate Education (Master's Program) , 3Term, Exercises in Electronics B
  2. 2024, Graduate Education (Master's Program) , 4Term, Exercises in Electronics B
  3. 2024, Graduate Education (Master's Program) , 4Term, Analog Integrated Circuits A
  4. 2024, Graduate Education (Master's Program) , Academic Year, Advanced Study in Quantum Matter
  5. 2024, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Quantum Matter
  6. 2024, Graduate Education (Doctoral Program) , Intensive, Advanced Study in Quantum Matter
  7. 2024, Undergraduate Education, 2Term, Introduction to Semiconductor Devices and Circuits
  8. 2024, Undergraduate Education, Year, Graduation Thesis
  9. 2024, Graduate Education (Master's Program) , First Semester, Seminar on Electronics A
  10. 2024, Graduate Education (Master's Program) , Second Semester, Seminar on Electronics B
  11. 2024, Graduate Education (Master's Program) , Academic Year, Academic Presentation in Electronics
  12. 2024, Graduate Education (Master's Program) , 1Term, Exercises in Electronics A
  13. 2024, Graduate Education (Master's Program) , 2Term, Exercises in Electronics A

Research Activities

Academic Papers

  1. Effects of parasitic elements on L-type LC/CL matching circuits, IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences, 20231107
  2. A 58-%-Lock-Range Divide-by-9 Injection-Locked Frequency Divider Using Harmonic-Control Technique, IEICE TRANSACTIONS ON ELECTRONICS, E106C(10), 529-532, 20231000
  3. A 0.6-V 41.3-GHz Power-Scalable Sub-Sampling PLL in 55-nm CMOS DDC, IEICE TRANSACTIONS ON ELECTRONICS, E106C(10), 533-537, 20231000
  4. A 0.4-V 29-GHz-bandwidth power-scalable distributed amplifier in 55-nm CMOS DDC process, IEICE Transactions on Electronics, E105.C(10), 561-564, 20221001
  5. A 76-Gbit/s 265-GHz CMOS receiver with WR-3.4 waveguide interface, IEEE Journal of Solid-State Circuits, 57(10), 2988-2998, 20221001
  6. 140 GHz CMOS amplifier with group delay variation of 10.2 ps and 0.1 dB bandwidth of 12 GHz, IEICE ELECTRONICS EXPRESS, 8(14), 1192-1197, 20110725
  7. New Performance Indicators of Metal-Oxide-Semiconductor Field-Effect Transistors for High-Frequency Power-Conscious Design, JAPANESE JOURNAL OF APPLIED PHYSICS, 51(2), 2012
  8. Estimation of cotunneling in single-electron logic and its suppression, Japanese Journal of Applied Physics, 35(2B), 1146-1150, 19960201
  9. Correlated electron-hole transport in capacitively-coupled one-dimensional tunnel junction arrays, Japanese Journal of Applied Physics, 36(6B), 4166-4171, 19970601
  10. Proposal of a Schottky-barrier SET aiming at a future integrated device, IEICE Transactions on Electronics, E80-C(7), 881-885, 19970701
  11. Single-electron circuit simulation, IEICE Transactions on Electronics, E81-C(1), 21-29, 19980101
  12. Circuit simulator aiming at single-electron integration, Japanese Journal of Applied Physics, 37(3B), 1478-1482, 19980301
  13. Scaling of the single-electron tunnelling current through ultrasmall tunnel junctions, Journal of Physics: Condensed Matter, 12(32), 7223-7228, 20000801
  14. Charging and retention times in silicon-floating-dot-single-electron memory, Japanese Journal of Applied Physics, 40(3B), 2041-2045, 20010301
  15. Cotunneling-tolerant single-electron logic, Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials (SSDM), 207-209, 19950901
  16. 1Gbps/ch 60GHz CMOS Multichannel Millimeter-Wave Repeater, 2010 Symposium on VLSI Circuits, 93-94, 20100601
  17. D-band 3.6-dB-insertion-loss ASK modulator with 19.5-dB isolation in 65-nm CMOS technology, 2010 Asia-Pacific Microwave Conference Proceedings (APMC), 1853-1856, 20101201
  18. 116GHz CMOS injection locked oscillator with 99.3dBc/Hz at 1MHz offset phase noise, 2010 Asia-Pacific Microwave Conference Proceedings (APMC), 786-789, 20101201
  19. 1Gbps/ch 60GHz CMOS Multichannel Millimeter-Wave Repeater, 2010 Symposium on VLSI Circuits, 93-94, 20100601
  20. 2Gbps CMOS amplitude-shift-keying demodulator with input sensitivity of 33dBm, 2010 European Microwave Conference (EuMC), 268-271, 20101001
  21. 115GHz CMOS VCO with 4.4% Tuning Range, the 4th European Microwave Integrated Circuits Conference, 128-131, 20090901
  22. 12.5mW 48GHz CMOS Image-Rejection Filter with 1GHz Tuning range, the 4th European Microwave Integrated Circuits Conference, 483-486, 20090901
  23. 24GHz 1.89mW 12x CMOS Frequency Multiplier Using Pulse-Injected Oscillator, the 4th European Microwave Integrated Circuits Conference, 180-183, 20090901
  24. 49 mW 5 Gbit/s CMOS receiver for 60 GHz impulse radio, Electronics Letters, vol 45(Issue 17), 889-890, 20090801
  25. 50 GHz S-shaped rat-race balun with 1.4 dB insertion loss in a wafer-level chip-size package process, International Journal of Microwave and Wireless Technologies, 347-352, 20090801
  26. A 110GHz Inductor-less CMOS Frequency Divider, 2009 IEEE Asian Solid-State Circuits Conference, 61-64, 20091101
  27. Algorithmic Design Flow for Millimeter-Wave CMOS Low-Noise Amplifiers, 2009 Thai-Japan Microwave, 該当なし, 20090801
  28. Analysis of de-embedding error cancellation in cascade circuit design, IEICE TRANSACTIONS on Electronics, E94-C(10), 1641-1649, 20111001
  29. Device-modeling techniques for high-frequency circuits operated at over 100 GHz, IEICE TRANSACTIONS on Electronics, E94-C(4), 589-597, 20110401
  30. Prospective Silicon Applications and Technologies in 2025, IEICE TRANSACTIONS on Electronics, E94-C(4), 386-393, 20110401
  31. Characteristic impedance determination technique for CMOS on-wafer transmission line with large substrate loss, 79th Automatic RF Techniques Group Conf. (ARFTG), 2012(-), -, 20120601
  32. On the choice of cascade de-embedding methods for on-wafer S-parameter measurement, International Symposium on Radio-Frequency Integration Technology (RFIT), 2012(-), 137-139, 20121101
  33. On the length of THRU standard for TRL de-embedding on Si substrate above 110 GHz, International Conference on Microelectronic Test Structures (ICMTS), 2013(-), 81-86, 20130301
  34. 118GHz CMOS amplifier with group delay variation of 11.2ps and 3dB bandwidth of 20.4GHz, 2012 International Meeting for Future of Electron Devices Kansai (IMFEDK), 1-2, 20120501
  35. Prospective Silicon Applications and Technologies in 2025, IEICE Trans. Electron., 94(4), 386-393, 20110401
  36. Device Modeling Techniques for High-Frequency Circuits Design Using Bond-Based Design at over 100GHz, IEICE Trans. Electron., 94(4), 589-597, 20110401
  37. Analysis of De-Embedding Error Cancellation in Cascade Circuit Design, IEICE Trans. Electron., 94(10), 1641-1649, 20111001
  38. Bias-Voltage-Dependent Subcircuit Model for Millimeter-Wave CMOS Circuit, IEICE Trans. Electron., 95(6), 1077-1085, 20120601
  39. A 120-GHz Transmitter and Receiver Chipset with 9-Gbps Data Rate Using 65-nm CMOS Technology, IEICE Trans. Electron., 95(7), 1154-1162, 20120701
  40. A 120 GHz/140 GHz Dual-Channel OOK Receiver Using 65nm CMOS Technology, IEICE Trans. Fundamentals, 96(2), 486-493, 20130201
  41. 98 mW 10 Gbps Wireless Transceiver Chipset With D-Band CMOS Circuits, IEEE JOURNAL OF SOLID-STATE CIRCUITS, 48(10), 2273-2284, 2013
  42. Modeling of Short-Millimeter-Wave CMOS Transmission Line with Lossy Dielectrics with Specific Absorption Spectrum, IEICE TRANSACTIONS ON ELECTRONICS, E96C(10), 1311-1318, 2013
  43. 135 GHz 98 mW 10 Gbps CMOS Amplitude Shift Keying Transmitter and Receiver Chipset, IEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS COMMUNICATIONS AND COMPUTER SCIENCES, E97A(1), 86-93, 2014
  44. 9 dB NF and +11 dBm OIP3 CMOS Single Conversion Front-End for a Satellite Low-Noise Block Down-Converter, IEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS COMMUNICATIONS AND COMPUTER SCIENCES, E97A(1), 101-108, 2014
  45. E-Band 65 nm CMOS Low-Noise Amplifier Design Using Gain-Boost Technique, IEICE TRANSACTIONS ON ELECTRONICS, E97C(6), 476-485, 2014
  46. 8-GHz Locking Range and 0.4-pJ Low-Energy Differential Dual-Modulus 10/11 Prescaler, IEICE TRANSACTIONS ON ELECTRONICS, E97C(6), 486-494, 2014
  47. 97-mW 8-Phase CMOS VCO and Dividers for a 134-GHz PLL Synthesizer, IEICE TRANSACTIONS ON ELECTRONICS, E98C(7), 685-692, 2015
  48. Design of CMOS Resonating Push-Push Frequency Doubler, J97-C(12), 484-491, 20141201
  49. Recent progress and prospects of terahertz CMOS, IEICE ELECTRONICS EXPRESS, 12(13), 2015
  50. Tehrahertz CMOS Design for Low-Power and High-Speed Wireless Communication, IEICE TRANSACTIONS ON ELECTRONICS, E98C(12), 1091-1104, 2015
  51. Special Section on Solid-State Circuit Design-Architecture, Circuit, Device and Design Methodology FOREWORD, IEICE TRANSACTIONS ON ELECTRONICS, E99C(4), 430-430, 20160401
  52. C-12-31 Evaluation of Uncertainty at On-Wafer Measurement of CMOS Millimeter-Wave Integrated Circuits, Proceedings of the Society Conference of IEICE, 2014(2), 20140909
  53. C-2-70 Injection-Locked-Oscillator-Based Phase Shifter with High Phase Resolution, Proceedings of the Society Conference of IEICE, 2014(1), 20140909
  54. C-2-22 Multi-Stage CMOS Amplifier with Flat Gain Response, Proceedings of the Society Conference of IEICE, 2014(1), 20140909
  55. C-2-103 Study of Dummy Generation Method for Transmission Line on CMOS Circuit, Proceedings of the IEICE General Conference, 2014(1), 20140304
  56. C-2-92 CMOS Microstrip Line-to-WR3.4 Waveguide Transitions, Proceedings of the IEICE General Conference, 2014(1), 20140304
  57. 6.3 Dependable Air(6. Connectivity,Dependable VLSI System), The journal of Reliability Engineering Association of Japan, 35(8), 20131201
  58. 7.5 Dependable Wireless RFIC Technologies(7. Responsiveness,Dependable VLSI System), The journal of Reliability Engineering Association of Japan, 35(8), 20131201
  59. C-2-37 Design for Maximum FOM of 79GHz Power Amplifier with Temperature Compensation, Proceedings of the Society Conference of IEICE, 2013(1), 20130903
  60. Selection of Process Parameters in Electromagnetic Field Analysis, Proceedings of the Society Conference of IEICE, 2013(1), 20130903
  61. Study on the Structure of CMOS Transmission Lines for Short-Millimeter-Wave Band, Proceedings of the Society Conference of IEICE, 2013(1), 20130903
  62. Study on the Length of THRU Used in CMOS On-Chip Deembedding, Proceedings of the Society Conference of IEICE, 2013(1), 20130903
  63. Post Fabrication Modeling of Transmission Line, Proceedings of the Society Conference of IEICE, 2013(1), 20130903
  64. A Study of Modeling of Non-linear Capacitors in the Diode, Proceedings of the Society Conference of IEICE, 2013(2), 20130903
  65. Study on the Length ofthe Zero-Ohm Transmission Line in Millimeter-Wave CMOS Circuits, Proceedings of the Society Conference of IEICE, 2013(2), 20130903
  66. 209mW 11Gbps 130GHz CMOS Transceiver for Indoor Wireless Communication, IEICE technical report. Electron devices, 113(378), 67-71, 20140109
  67. Diode Modeling with Lossy Nonlinear Capacitance Model, Technical report of IEICE. ICD, 113(419), 20140121
  68. Design of CMOS Transmission Line-to-Waveguide Transitions from Milimeter Wave, Technical report of IEICE. ICD, 113(419), 20140121
  69. Drain Matching CMOS Millimeter-wave Frequency Doubler, Technical report of IEICE. ICD, 113(419), 20140121
  70. C-12-50 Diode Modeling with Lossy Nonlinear Capacitance Model, Proceedings of the IEICE General Conference, 2014(2), 20140304
  71. C-2-1 Temperature Compensation of CMOS Power Amplifier for 79GHz Radar System, Proceedings of the IEICE General Conference, 2014(1), 20140304
  72. C-2-36 Study for Gain of Small-Signal Amplifier at Conditionally Stable Region, Proceedings of the IEICE General Conference, 2014(1), 20140304
  73. C-2-61 The Effect on the Device Evaluation Results of Measurement Variability in the Millimeter-wave CMOS On-Chip De-embedding, Proceedings of the IEICE General Conference, 2014(1), 20140304
  74. Characterization of low-characteristic-impedance decoupling transmission line, IEICE technical report. Microwaves, 113(460), 29-34, 20140225
  75. On-wafer de-embedding pattern design for reduced uncertainty under an area constraint, IEICE technical report. Microwaves, 113(460), 35-40, 20140225
  76. Matching circuit for CMOS millimeter-wave frequency doubler, IEICE technical report. Microwaves, 113(460), 41-46, 20140225
  77. Consideration about Extremely High Frequency CMOS Amplification Circuit which is Wideband, IEICE technical report. Microwaves, 113(460), 47-51, 20140225
  78. C-2-1 Relationship between Size of Buffer and Maximum Oscillation Frequency in Ring Oscillator, Proceedings of the Society Conference of IEICE, 2014(1), 20140909
  79. C-2-39 CMOS transmission Line-to-Waveguide Transitions with coaxial structure, Proceedings of the Society Conference of IEICE, 2014(1), 20140909
  80. CI-2-8 Trends and Future Prospects of Terahertz CMOS Circuits, Proceedings of the Society Conference of IEICE, 2014(1), "SS-33"-"SS-34", 20140909
  81. Injection-Locked-Oscillator-Based Phase Shifter with High Phase Resolution, IEICE technical report. Computer systems, 114(346), 87-91, 20141124
  82. Study of 300 GHz CMOS wireless transceiver system, IEICE technical report. Computer systems, 114(346), 20141124
  83. Study of multi-stage CMOS small signal amplifier with wideband width and high gain, IEICE technical report. Microwaves, 114(376), 103-108, 20141211
  84. Study of Matched Ring Oscillators, IEICE technical report. Microwaves, 114(376), 109-114, 20141211
  85. C-2-47 300 GHz CMOS Microstrip Line-to-Waveguide Transitions, Proceedings of the Society Conference of IEICE, 2015(1), 20150825
  86. C-12-11 Model of Millimeter-Wave CMOS Zero-Ohm Transmission Line, Proceedings of the Society Conference of IEICE, 2015(2), 20150825
  87. C-12-14 Behavior model of a frequency tripler, Proceedings of the Society Conference of IEICE, 2015(2), 20150825
  88. Modeling of Nonlinear Capacitance on MOSFET at Millimeter-Wave Frequencies, IEICE technical report. Microwaves, 114(498), 1-5, 20150226
  89. Design of CMOS Multi-Stage Low-Noise Amplifier with Wide Bandwidth and High Gain, IEICE technical report. Microwaves, 114(498), 7-11, 20150226
  90. CMOS Biosensor IC Focusing on Dielectric Relaxations of Biological Water with 120GHz and 60GHz Oscillator Arrays, ITE Technical Report, 40(12), 41-44, 20160304
  91. FOREWORD, IEICE Transactions on Electronics, 99(4), 430-430, 2016
  92. Design of Matching Network with a Transformer, Proceedings of the Society Conference of IEICE, 2013(1), 20130903
  93. CMOS Millimeter-wave Differential Power Amplifier using On-chip Balun, Proceedings of the Society Conference of IEICE, 2013(1), 20130903
  94. Wireless digital data transmission from a 300 GHz CMOS transmitter, ELECTRONICS LETTERS, 52(15), 1353-1354, 20160721
  95. Compact 141-GHz Differential Amplifier with 20-dB Peak Gain and 22-GHz 3-dB Bandwidth, IEICE TRANSACTIONS ON ELECTRONICS, E99C(10), 1156-1163, 20161001
  96. CMOS Biosensor IC Focusing on Dielectric Relaxations of Biological Water With 120 and 60 GHz Oscillator Arrays, IEEE JOURNAL OF SOLID-STATE CIRCUITS, 51(11), 2534-2544, 20161101
  97. A 300 GHz CMOS Transmitter With 32-QAM 17.5 Gb/s/ch Capability Over Six Channels, IEEE JOURNAL OF SOLID-STATE CIRCUITS, 51(12), 3037-3048, 20161201
  98. Integrated-Circuit Approaches to THz Communications: Challenges, Advances, and Future Prospects, IEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS COMMUNICATIONS AND COMPUTER SCIENCES, E100A(2), 516-523, 20170201
  99. A consideration for transceivers operating at over 100GHz, 2011(113), 43-48, 20111209
  100. Millimeter-Wave and Terahertz CMOS Circuits and Applications, 2012(30), 25-26, 20120307
  101. 17.9 A 105Gb/s 300GHz CMOS transmitter, 2017 IEEE International Solid-State Circuits Conference (ISSCC), 308-309, 20170205
  102. Millimeter-Wave CMOS Circuits Aiming Terahertz Application, IEICE technical report. Electron devices, 109(313), 1-6, 20091122
  103. CS-8-4 Millimeter-Wave CMOS Circuits Towards Terahertz Region, Proceedings of the Society Conference of IEICE, 2010(1), "S-90"-"S-91", 20100831
  104. CS-2-5 Millimeter-Wave-Band CMOS Image Rejection Filer, Proceedings of the IEICE General Conference, 2010(1), "S-54"-"S-55", 20100302
  105. CI-2-1 Teraherz CMOS Oscillator, Proceedings of the Society Conference of IEICE, 2010(2), "SS-15"-"SS-16", 20100831
  106. BI-2-3 Millimeter-Wave/Terahertz CMOS Circuits, Proceedings of the Society Conference of IEICE, 2011(1), "SS-17"-"SS-18", 20110830
  107. Current Trend of Millimeter-Wave and Terahertz CMOS Ciruits, 111(271), 7-10, 20111021
  108. C-12-70 118GHz CMOS VCO using Back-Gate-Voltage-Controlled with Low Output Power Ripple, Proceedings of the IEICE General Conference, 2012(2), 20120306
  109. C-2-30 Comparison of Short-Millimeter-Wave CMOS On-Wafer De-embeddings, Proceedings of the Society Conference of IEICE, 2012(1), 20120828
  110. C-12-7 Wideband CMOS D-band Small-Signal Amplifier with Low Group Delay Variation, Proceedings of the Society Conference of IEICE, 2012(2), 20120828
  111. C-12-8 29.3GHz 133GHz Bandwidth CMOS Small-Signal Amplifier, Proceedings of the Society Conference of IEICE, 2012(2), 20120828
  112. C-12-10 Millimeter-Wave and Terahertz CMOS Circuits, Proceedings of the Society Conference of IEICE, 2012(2), 20120828
  113. Scattering matrix normalized to a nondiagonal reference impedance matrix, IEICE technical report. Microwaves, 112(459), 37-38, 20130227
  114. Relations of Gain and Stability in terms of the Parameter μ, Proceedings of the Society Conference of IEICE, 2013(1), 20130903
  115. 300-GHz Balanced Varactor Doubler in Silicon CMOS for Ultrahigh-Speed Wireless Communications, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 28(4), 341-343, 20180400
  116. DC and RF characterization of RF MOSFET embedding structure, 2017 International Conference of Microelectronic Test Structures (ICMTS), 1-5, 20170327
  117. Causal transmission line model incorporating frequency-dependent linear resistors, 2017 IEEE 21st Workshop on Signal and Power Integrity (SPI), 1-4, 20170507
  118. An 80–106 GHz CMOS amplifier with 0.5 V supply voltage, 2017 Radio Frequency Integrated Circuits Symposium (RFIC), 308-311, 20170604
  119. 56-Gbit/s 16-QAM Wireless Link With 300-GHz-Band CMOS Transmitter, 2017 IEEE International Microwave Symposium (IMS2017), 1-4, 20170607
  120. A 32 Gbit/s 16QAM CMOS Receiver in 300 GHz Band, 2017 IEEE International Microwave Symposium (IMS2017), 1-4, 20170608
  121. A figure of merit for terahertz transceiver modules, Vietnam Japan Microwave 2017 Conference (VJMW 2017), 20170614
  122. A 300 GHz CMOS Transmitter Front-End for Ultrahigh-Speed Wireless Communications, International Journal of Electrical and Computer Engineering (IJECE), vol. 7(no. 4), 2278-2286, 20170801
  123. Noise-figure optimization of a multi-stage millimeter-wave amplifier with negative capacitance feedback, 2017 Thailand-Japan Microwave (TJMW2017), 20170615
  124. 2.37-dBm-output 288–310 GHz frequency multiplier in 40 nm CMOS, 2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 28-30, 20170831
  125. A 416-mW 32-Gbit/s 300-GHz CMOS receiver, 2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 65-67, 20170831
  126. A 300 GHz single varactor doubler in 40 nm CMOS, 2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 165-167, 201709
  127. Low-power D-band CMOS amplifier for ultrahigh-speed wireless communications, International Journal of Electrical and Computer Engineering, vol. 8(no. 2), 933-938, 20180401
  128. 300-GHz CMOS transmitter module with built-in waveguide transition on a multilayered glass epoxy PCB, The 2018 IEEE Radio and Wireless Symposium (RWS2018), 154-156, 20180116
  129. A 300-uW K-Band Oscillator with High-Q Open Stub Capacitor in 55-nm CMOS DDC, The 2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT2018), 20180816
  130. 32-Gbit/s CMOS Receivers in 300-GHz Band, IEICE TRANSACTIONS ON ELECTRONICS, E101C(7), 464-471, 20180701
  131. A 79-85 GHz CMOS Amplifier with 0.35 V Supply Voltage, 2018 13th European Microwave Integrated Circuits Conference (EuMIC), 20180924
  132. A 239 – 315 GHz CMOS Frequency Doubler Designed by Using a Small-Signal Nonlinear Model, 2018 13th European Microwave Integrated Circuits Conference (EuMIC), 20180924
  133. 300-GHz CMOS Receiver Module with WR-3.4 Waveguide Interface, 2018 48th European Microwave Conference (EuMC), 20180926
  134. A 37-GHz-Input Divide-by-36 Injection-Locked Frequency Divider with 1.6-GHz Lock Range, IEEE Asian Solid-State Circuits Conference (A-SSCC 2018), 20181107
  135. Key Technologies for THz Wireless Link by Silicon CMOS Integrated Circuits, PHOTONICS, 5(4), 1-17, 20181123
  136. Emerging applications with terahertz communication, International Journal of Terahertz Science and Technology (TST), vol. 11(no. 4), 124-130, 20181231
  137. An 80Gb/s 300GHz-Band Single-Chip CMOS Transceiver, 2019 International Solid-State Circuits Conference (ISSCC 2019), 20190218
  138. MOSFET Small-Signal Model Considering Hot-Carrier Effect for Millimeter-Wave Frequencies, JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES, 40(4), 419-428, 20190401
  139. Causal Characteristic Impedance Determination Using Calibration Comparison and Propagation Constant, 2019 92nd ARFTG Microwave Measurement Conference (ARFTG), 1-6, 20190119
  140. Wideband Power-Line Decoupling Technique for Millimeter-Wave CMOS Integrated Circuits, 2019 IEEE International Symposium on Circuits and Systems (ISCAS), 1-4, 20190526
  141. An 80-Gb/s 300-GHz-Band Single-Chip CMOS Transceiver, IEEE JOURNAL OF SOLID-STATE CIRCUITS, 54(12), 3577-3588, 201912
  142. Design of CMOS On-Chip Transformer Coupled Matching Network for Millimeter-Wave Amplifiers with Optimal Chip Area, 2019 1st International Conference on Advances in Science, Engineering and Robotics Technology (ICASERT), 20190503
  143. Design of CMOS On-Chip Millimeter-Wave Transformer Coupled Balun and Power Divider-Combiner with Optimal Amplitude and Phase Imbalance, 2019 1st International Conference on Advances in Science, Engineering and Robotics Technology (ICASERT), 20190503
  144. 300-GHz Wireless Data Transmission System with Low-Snr CMOS RF Front End, 2019 12th Global Symposium on Millimeter Waves (GSMM), 20190522
  145. A-40-dBc Integrated-Phase-Noise 45-GHz Sub-Sampling PLL with 3.9-dBm Output and 2.1% DC-to-RF Efficiency, 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2019), 175-178, 20190601
  146. A 6-mW-DC-Power 300-GHz CMOS Receiver for Near-Field Wireless Communications, 2019 IEEE MTT-S International Microwave Symposium (IMS 2019), 504-507, 20190601
  147. Study on sub-terahertz-band wireless system with fiber-optic speed, Impact, vol. 2020(no. 1), 41-42, 20200227
  148. Future of 300 GHz band wireless communications and their enabler, CMOS transceiver technologies, JAPANESE JOURNAL OF APPLIED PHYSICS, 60(SB), 20210215
  149. Improvement Method of Power-Added Efficiency of Multi-Stage CMOS Amplifiers in Millimeter-Wave Band, 2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 28-30, 20200902
  150. Effect of an Electromagnetic Wave Absorber on 300-GHz Short-Range Wireless Communications, 2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 94-96, 20200902
  151. 300-GHz CMOS-Based Wireless Link Using 40-dBi Cassegrain Antenna for IEEE Standard 802.15. 3d, 2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 136-138, 20200903
  152. Overview of sub-terahertz communication and 300GHz CMOS transceivers, IEICE ELECTRONICS EXPRESS, 18(8), 20210425
  153. White Paper on RF Enabling 6G – Opportunities and Challenges from Technology to Spectrum, University of Oulu 6G Research Visions, No. 13(No. 13), 20210401
  154. A 32-Gb/s CMOS Receiver With Analog Carrier Recovery and Synchronous QPSK Demodulation,, in IEEE Microwave and Wireless Components Letters, vol. 31(no. 6), 768-770, 20210317
  155. Coverage of Sub-Terahertz Communications and A 300-GHz-Band CMOS Transceiver, 2021 13th Global Symposium on Millimeter-Waves & Terahertz (GSMM), 1-3, 20210523
  156. A 258-GHz CMOS Transmitter with Phase-Shifting Architecture for Phased-Array Systems, 2021 IEEE MTT-S International Microwave Symposium (IMS), 705-708, 20210607
  157. A 272-GHz CMOS Analog BPSK/QPSK Demodulator for IEEE 802.15.3d, ESSCIRC 2021 – IEEE 47th European Solid State Circuits Conference (ESSCIRC), 415-418, 20210913
  158. A 76-Gbit/s 265-GHz CMOS Receiver,, 2021 IEEE Asian Solid-State Circuits Conference (A-SSCC), 1-3, 20210913
  159. A 30-To-70-GHz CMOS Amplifier for 300-GHz Heterodyne Receivers, 2021 Asia-Pacific Microwave Conference (APMC), 20211130

Publications such as books

  1. 2021/03/29, THz Communications. Springer Series in Optical Sciences, vol 234., Si-CMOS, Springer, Cham, 2021, 202103, Joint work, O. Momeni, M. Fujishima, 978-3-030-73737-5, pp.235-255
  2. 2015/02, Wireless Transceiver Circuits: System Perspectives and Design Aspects, Modern transceiver systems require diversified design aspects as various radio and sensor applications have emerged. Choosing the right architecture and understanding interference and linearity issues are important for multi-standard cellular transceivers and software-defined radios. A millimeter-wave complementary metal–oxide–semiconductor (CMOS) transceiver design for multi-Gb/s data transmission is another challenging area. Energy-efficient short-range radios for body area networks and sensor networks have recently received great attention. To meet different design requirements, gaining good system perspectives is important., Ultrahigh-Speed Wireless Communication with Short-Millimeter-Wave CMOS Circuits, CMOS, millimeter-wave, transceiver, CRC Press, 2015, 2, Scholarly Book, Joint work, 英, 9781482234350, 580
  3. 2015/07, Current Millimeter-Wave Technology, 波長が1cm以下の電波であるミリ波に関する技術開発は長い歴史を持っているが、車載レーダや固定無線などの一部の用途を除いては未だに大きなマーケットを形成していない。  その原因は、デバイスが未成熟であったこと、ミリ波は直進性が強くこれまでの無線通信とは異なり自由に接続できないこと、ミリ波通信では数Gbpsの超高速データ伝送が可能だが、コストに見合った用途やコンテンツが未成熟だったことなどが挙げられる。  初期のミリ波デバイスはインパットダイオードやガンダイオードなどの二端子デバイスであった。私が学生だった時代から使用されていたので、40年以上の歴史がある。しかしながら、二端子デバイスは入出力の分離が困難なため応用分野が限定され、ミリ波帯で広く使用されたのは三端子デバイスであるGaAs化合物半導体トランジスタであった。  現在では、これを伝送線路などの受動素子と併せて集積化したマイクロ波モノリシック集積回路(MMIC)によりミリ波回路の実用化が図られ、衛星放送の受信機、車載レーダ、固定無線などに用いられている。しかしながら、来たる大量使用に向けてモノリシック集積回路による実現が試みられるようになった。当初はSiGeヘテロ接合トランジスタによる集積回路が開発され、続いて微細化により周波数特性が急激に上昇したCMOS集積回路が開発された。CMOS集積回路の意義は高周波性能が目標に達したということだけではなく、デジタル回路との混載が可能であり、ミスマッチの抑制など様々なデジタル補償を用いることで、システム全体の性能向上、小面積化、低電力化が図り易いことや、将来のベースバンド回路との一体集積が可能となることにある。  また、最近は変復調の多値化ビット数の向上により、同一周波数帯域を用いてもデータレートを向上できる技術が開発されるようになり、従来に比較して約6倍の速度向上が図られている。このためには位相雑音の低減、周波数特性のフラットネスの向上、ベースバンドを含めた雑音や歪の低減が重要である。更にミリ波の課題である直進性への対応として、電子ビームフォーミング技術の開発が盛んである。また、低電力である程度の距離の通信を可能にするためには高利得アンテナが重要となるが、平面アンテナを中心として各種のアンテナ技術や、アンテナとチップを繋ぐ、低損失のパッケージ技術なども開発が進められている。 新たな市場への対応として、超高速データ伝送特性を用いて短時間のデータ伝送特性を実現する、データキオスクなどの新たな近距離無線技術が実用化されようとしている他、光ファイバーに比べて敷設の自由度が高いミリ波無線ネットワーク、4K・8Kなどの超高精細TVシステムへの適用技術、ミリ波イメージング技術なども開発が進められている。  以上のようにミリ波技術はデバイス技術だけでなく、回路技術やシステム技術の開発により、その課題を克服し、本来の利点である超高速信号伝送の実現に向けた開発が続けられており、今後の無線通信における通信容量の逼迫を解決する技術としてミリ波技術が実用化される日もそれほど遠くないものと思われる。, 2015, 7, Scholarly Book, Joint work, 日, 978-4-7813-1078-7, 220, 8
  4. 2018/08/01, VLSI Design and Tems Dependabilityest for Syst, Connectivity in Wireless Telecommunications, Springer, 2018, 201808, Scholarly Book, Joint work, EN, K. Tsubouchi, F. Adachi, S. Kameda, M. Motoyoshi, A. Taira, N. Suematsu, T. Takagi, H. Oguma, M. Fujishima, R. Inagaki, M. Tsuru, E. Taniguchi, H. Fukumoto, A. Matsuzawa, M. Miyahara, M. Iwata, F. Yamagata, N. Izuka,, 245-324
  5. 2017/08/01, International Journal of Electrical and Computer Engineering (IJECE), A 300 GHz CMOS Transmitter Front-End for Ultrahigh-Speed Wireless Communications, 2017/08/01, 201708, T. A. Vu, M. Fujishima, pp. 2278-2286
  6. 2017/02/01, IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences, Integrated-Circuit Approaches to THz Communications: Challenges, Advances, and Future Prospects, 2017/02/01, 201702, M. Fujishima, S. Amakawa, pp. 516-523
  7. 2019/08/19, Design of Terahertz CMOS Integrated Circuits for High-Speed Wireless Communication, Design of Terahertz CMOS Integrated Circuits for High-Speed Wireless Communication, The Institution of Engineering and Technology (IET), 2019, 201908, Scholarly Book, Joint work, EN, 1785613871, 189
  8. 2019/07/21, Connectivity in Wireless Telecommunications, VLSI Design and Test for Systems Dependability, Springer, Tokyo, 2019, 201907, Scholarly Book, Joint work, EN, K. Tsubouchi, F. Adachi, S. Kameda, M. Motoyoshi, A. Taira, N. Suematsu, T. Takagi, H. Oguma, M. Fujishima, R. Inagaki, M. Tsuru, E. Taniguchi, H. Fukumoto, A. Matsuzawa, M. Miyahara, M. Iwata, F. Yamagata, N. Izuka, pp. 245-324

Invited Lecture, Oral Presentation, Poster Presentation

  1. Ultrahigh-Speed Wireless Communications in the 300-GHz Band and Its Future, M. Fujishima, 2023 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT 2023), 2023/08/15, With Invitation, English
  2. The Future of 300 GHz Band Wireless Communications, M. Fujishima, European Conference on Networks and Communications (EuCNC), 2023/06/06, With Invitation, English
  3. CMOS Sub-Terahertz Wireless Communications Using High-Frequency Circuit Techniques Beyond Fmax, M. Fujishima, 2023 IEEE Custom Integrated Circuits Conference (CICC), 2023/04/23, With Invitation, English
  4. Active Combiner with Cascode Circuit, L. Xu, S. Yabuki, S. Tanaka, T. Yoshida, M. Fujishima, 2023 Thailand-Japan Microwave (TJMW), 2023/12/15, Without Invitation, English
  5. Evaluation of a 40-nm CMOS Process 105-to-145-GHz Differential Wilkinson Coupler, Z. Yan, S. Tanaka, T. Yoshida, M. Fujishima, 2023 Asia-Pacific Microwave Conference (APMC 2023), 2023/12/07, Without Invitation, English
  6. A 40nm CMOS Wide-Bandwidth Marchand Balun at 180-370 GHz, Z. Yan, S. Tanaka, T. Yoshida, M. Fujishima, International Symposium on Biomedical Engineering / International Workshop on Nanodevice Technologies (ISBE2023/IWNT2023), 2023/11/21, Without Invitation, English
  7. Design of 40-nm CMOS active combiner with Cascode Circuit, L. Xu, S. Tanaka, T. Yoshida, M. Fujishima, International Symposium on Biomedical Engineering / International Workshop on Nanodevice Technologies (ISBE2023/IWNT2023), 2023/11/22, Without Invitation, English
  8. A 2D Beam-Steerable 252-285-GHz 25.8-Gbit/s CMOS Receiver Module, T. Yoshida, S. Hara, T. Hagino. M. Mubarak, A. Kasamatsu, K. Takano, Y. Sugimoto, K. Sakakibara, S. Amakawa, M. Fujishima, 2023 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2023/11/05, Without Invitation, English
  9. Suppression of Reflections and Elimination of Transmission Disparities in Differential Crossover Line Junctions, Z. Yan, S. Tanaka, T. Yoshida, M. Fujishima, 2023 IEEE 15th International Conference on ASIC (ASICON 2023), 2023/10/27, Without Invitation, English
  10. A 27-to-65-GHz CMOS Amplifier with Tunable Frequency Response, L. Xu, S. Yabuki, S. Tanaka, T. Yoshida, M. Fujishima, 2023 IEEE 15th International Conference on ASIC (ASICON 2023), 2023/10/27, Without Invitation, English
  11. Analysis of the Wilkinson Coupler Under Different Input Conditions, S. Tanaka, T. Yoshida, S. Amakawa, M. Fujishima, URSI General Assembly and Scientific Symposium (URSI GASS 2023), 2023/08/24, Without Invitation, English
  12. Differential Wilkinson Coupler with Reduced Reflections at Intersections, Z. Yan, S. Tanaka, T. Yoshida, M. Fujishima, URSI General Assembly and Scientific Symposium (URSI GASS 2023), 2023/08/22, Without Invitation, English
  13. Effects of Parasitic Elements on LC/CL Matching Circuits, S. Tanaka, T. Yoshida, M. Fujishima, International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC 2023), 2023/06/27, Without Invitation, English
  14. Sub-Terahertz Transceivers in Silicon- Issues and Challenges -, M. Fujishima, imec seminar, 2022/09/16, With Invitation, English, Belgium
  15. 300-GHz Back-Radiation On-Chip-Antenna Measurement with Electromagnetic-Wave-Absorption Sheet, S. Lee, K. Katayama, K. Takano, M. Fujita, M. Toyoda, S. Hara, I. Watanabe, A. Kasamatsu, S. Amakawa, T. Yoshida, M. Fujishima, 2022 IEEE 34th International Conference on Microelectronic Test Structures (ICMTS), 2022/03/21, Without Invitation, English
  16. Will Terahertz Communication Change the World?, M. Fujishima, The 2022 Asia-Pacific Microwave Conference (APMC 2022), 2022/11/30, With Invitation, English, Yokohama
  17. 300-GHz band transceiver using silicon CMOS integrated circuits -Behind-the-scenes of circuit design that exceeds fmax-, M. Fujishima, 2022 International Conference on Analog VLSI Circuits(AVIC), 2022/10/31, With Invitation, English, HIroshima
  18. Challenges and future of sub-THz communications using CMOS integrated circuits, M. Fujishima, The European Microwave Conference (EuMC), 2022/09/27, With Invitation, English, Milan, Italy
  19. 300-GHz self-heterodyne-mixing-receiver-based wireless data transmission, S. Lee, Y. Morishita,S. Amakawa,T. Yoshida and M. Fujishima, 2022 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT 2022), 2022/08/31, With Invitation, English, Online
  20. Potential of terahertz communication not limited to short range, M. Fujishima, 2022 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT 2022), 2022/08/31, With Invitation, English, Online
  21. Issues and challenges for sub-teraertz transceivers, M. Fujishima, The 10th Murata Semiconductor Workshop, 2022/07/07, With Invitation, English, JAPAN
  22. A 300-GHz analog-demodulation CMOS receiver for IEEE 802.15.3d, S. Lee, S. Amakawa, T. Yoshida and M. Fujishima, The 14th Global Symposium on Millimeter-waves & Terahertz (GSMM 2022), 2022/03/20, With Invitation, English, Seoul
  23. 29-to-65-GHz CMOS amplifier with tunable frequency response, S. Yabuki, S. Fujimoto, S. Amakawa, T. Yoshida and M. Fujishima, 2022 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT 2022), 2022/08/30, Without Invitation, English, Online
  24. 254-GHz-to-299-GHz down conversion mixer using 45nm SOI CMOS, Y. Sako, T. Kobayashi, S. Hara, S. Amakawa, T. Yoshida, M. Fujishima, 65th IEEE International Midwest Symposium on Circuits and Systems (MWSCAS 2022), 2022/08/08, Without Invitation, English, Online
  25. Demonstration of non-invasive probing of CMOS devices with aluminum pads at frequencies up to 500 GHz, R. Sakamaki, R. Kishikawa, S. Kon, Y. Tojima, I. Somada, S. Matsui, G. Taoka, T. Yoshida, S. Amakawa, M. Fujishima, 99th Automatic Radio Frequency Techniques Group (ARFTG) Microwave Measurement Conference, 2022/06/24, Without Invitation, English, Denver, CO, USA
  26. 300-GHz Back-Radiation On-Chip-Antenna Measurement with Electromagnetic-Wave-Absorption Sheet, S. Lee, K. Katayama, K. Takano, M. Fujita, M. Toyoda, S. Hara, I. Watanabe, A. Kasamatsu, S. Amakawa, T. Yoshida, M. Fujishima, 2022 IEEE 34th International Conference on Microelectronic Test Structures (ICMTS), 2022/03/21, Without Invitation, English, Virtual
  27. Overview of Sub-Terahertz Communications and 300 GHz CMOS Transceivers, M. Fujishima, Intel Laboratory Web Seminar, 2021/05/05, With Invitation, English, Online
  28. Overview of Sub-Terahertz Communications and 300 GHz CMOS Transceivers, M. Fujishima, POSTECH EE seminar in RFIC, 2021/04/02, With Invitation, English, Online
  29. CMOS Transceiver Realizing Terahertz Wireless Communication, The Key Technology of Beyond 5G, M. Fujishima, 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2020/11/03, With Invitation, English, Kunming, China (Online)
  30. Future of 300-GHz-Band Wireless Communications and Their Enabler, CMOS Transceiver Technologies, M. Fujishima, 2020 International Conference on Solid-State Devices and Materials (SSDM), 2020/09/29, With Invitation, English, VIRTUAL
  31. Ultrahigh-Speed One-Chip CMOS Transceiver with 300-GHz Band, M. Fujishima, 2019 IEEE 13th International Conference on ASIC (ASICON), 2019/10/31, With Invitation, English, Chongqing, China
  32. 300-GHz-Band One-Chip CMOS Wireless Transceiver and Its Future, M. Fujishima, The 5th International Symposium on Microwave/Terahertz Science and Applications (MTSA2019), 2019/10/01, With Invitation, English, Busan, Korea
  33. 300-GHz-Band CMOS Ultrahigh-Speed Transceiver and Its Future, M. Fujishima, The 4th Japan-Russia Joint Microwave and Telecommunication Workshop, 2019/09/19, With Invitation, English, St. Peterburg, Russia
  34. One-Chip CMOS Terahertz Transceiver, M. Fujishima, IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2019/08/30, With Invitation, English, Nanjing, China
  35. 300-GHz-Band CMOS Transmitter and Receiver Modules with WR-3.4 Waveguide Interface, S. Amakawa and M. Fujishima, IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G), 2019/08/15, With Invitation, English, Atlanta, USA
  36. Terahertz One-Chip CMOS Transceiver (Keynote), M. Fujishima, The sixth IEEE MTT-S International Wireless Symposium (IEEE IWS 2019), 2019/05/20, With Invitation, English, Guangzhou, China
  37. Ultrahigh-Speed Terahertz Transceiver with CMOS Technology, M. Fujishima, The European Microwave Conference in Central Europe (EuMCE), 2019/05/13, With Invitation, English, Prague, Czech Republic
  38. 300-GHz-band wireless communication and its futures, M. Fujishima, IHP workshop, 2019/03/20, With Invitation, English, Frankfurt (Oder), Germany
  39. 300-GHz-band wireless communication and its futures, M. Fujishima, IMEC workshop, 2019/03/18, With Invitation, English, Leuven, Belgium
  40. 300-GHz-band CMOS transceiver for ultrahigh-speed terahertz communication (Invited Paper), M. Fujishima, Special Session on THz Communication in SPIE Photonics West, 2019/02/05, With Invitation, English, San Francisco
  41. Ultrahigh-speed terahertz wireless communication with silicon CMOS integrated circuits, M. Fujishima, 2nd CIRFE Symposium Symposium on Advanced Applications, 2018/12/04, With Invitation, English, Nagoya
  42. 300-GHz CMOS transceiver for terahertz wireless communication, S. Hara, K. Takano, K. Katayama, R. Dong and S. Lee, I. Watanabe, N. Sekine, A. Kasamatsu, T. Yoshida, S. Amakawa and M. Fujishima, S. Hara, K. Takano, K. Katayama, R. Dong and S. Lee, I. Watanabe, N. Sekine, A. Kasamatsu, T. Yoshida, S. Amakawa and M. Fujishima, 30th Asia-Pacific Microwave Conference (APMC 2018), 2018/11/08, With Invitation, English, Kyoto
  43. Terahertz CMOS technology for beyond 5G, M. Fujishima, IEEE Asian Solid-State Circuits Conference (A-SSCC 2018), 2018/11/05, With Invitation, English, Tainan
  44. 300-GHz-band wireless transceiver with CMOS integrated circuits, M. Fujishima, 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2018), 2018/11/01, With Invitation, English, Qingdao
  45. 300GHz-Band CMOS Wireless Transceiver, M. Fujishima, 2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT2018), 2018/08/17, With Invitation, English, Melbourne, Australia
  46. Ultrahigh-speed terahertz wireless communication with silicon integrated circuits, M. Fujishima, Workshop B, The 2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT2018), 2018/08/15, With Invitation, English, Melborne
  47. 300-GHz-band Communication Using Silicon CMOS Integrated Circuits, M. Fujishima, Progress In Electromagnetics Research Symposium (PIERS 2018), 2018/08/03, With Invitation, English, Toyama
  48. 300-GHz-band CMOS wireless communication and its potential applications, M. Fujishima, 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2018), 2018/07/03, With Invitation, English, Kitakyusyu
  49. Terahertz Wireless Communication with Silicon CMOS Integrated Circuits, M. Fujishima, 2018 Thailand–Japan Microwave (TJMW), 2018/06/28, With Invitation, English, Bangkok, Thailand
  50. 300-GHz CMOS wireless transceiver and its future, M. Fujishima, WSD: eXtreme-bandwidth: architectures for RF and mmW transceivers in nanoscale CMOS, 2018/06/10, With Invitation, English, Pennsylvania, USA
  51. 300-GHz-band CMOS transceiver, M. Fujishima, the 2017 IEEE International Microwave and RF Conference (IMaRC 2017), 2017/12/13, With Invitation, English, India Ahmedabad
  52. 300-GHz-band terahertz transceiver using CMOS integrated circuits, M. Fujishima, The 6th Shenzhen International Conference on Advanced Science and Technology (SICAST 2017), 2017/12/06, With Invitation, English, China Shenzhen
  53. Technologies for THz wireless link by Silicon CMOS Integrated Circuits, M. Fujishima, 4th Microwave/THz Science and Applications (MTSA 2017), 2017/11/22, With Invitation, English, Okayama
  54. Terahertz CMOS Transceiver for Tera-bps Wireless Link, M. Fujishima, IEEE 12th International Conference on ASIC (ASICON 2017), 2017/10/28, With Invitation, English, China Guiyang
  55. CMOS terahertz transceiver to open up an emerging communication region, M. Fujishima, RIEC Russia-Japan Joint International Microwave Workshop 2017, 2017/10/19, With Invitation, English, Sendai
  56. Near-fiber-optic-speed 300-GHz-band link and a dedicated CMOS transceiver, M. Fujishima, 2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2017/08/31, With Invitation, English, Korea Seoul
  57. 300-GHz-band CMOS wireless transceiver and its future, M. Fujishima, 42 International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz 2017), 2017/08/28, With Invitation, English, Cancun, Mexico
  58. Ultimate high-speed and low-power CMOS transceiver, M. Fujishima, M. Fujishima, R. Dong, Advanced CMOS Technology Summer School (ACSS) 2017, 2017/08/01, With Invitation, English, Beijing China
  59. 300GHz CMOS Transceiver -Beyond 5G Wireless -, R. Dong, R. Dong, K. Takano, K. Katayama, S. Hara , T. Yoshida, S. Amakawa, M. Fujishima, 5G Event Shanghai, 2017/07/20, With Invitation, English, Shanghai, China
  60. A 300GHz-band wireless transceiver using Si-CMOS integrated circuits, Minoru Fujishima, Photonics Society Summer Topical Meeting Series (SUM), 2017 IEEE, 2017/07/10, With Invitation, English, San Juan, United States
  61. 300GHz wireless link with a CMOS transceiver, Minoru Fujishima, Nano-Micro Conference 2017, 2017/06/20, With Invitation, English, Shanghai, China
  62. Near-Fiber-Optic-Speed Wireless Communication with Terahertz CMOS Technology, M. Fujishima, IEEE MTT-S Latin America Microwave Conference (LAMC), 2016/12/13, With Invitation, English, Puerto Vallarta Mexico
  63. Terahertz wireless communication using 300GHz CMOS transmitter, Minoru Fujishima, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2016), 2016/10/27, With Invitation, English, Hangzhou, China
  64. 300GHz CMOS Wireless Transmitter with Fiber-Optic Speed, M. Fujishima, The 2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT2016), 2016/08/24, With Invitation, English, Taipei, Taiwan
  65. Channel allocation of 300GHz band for fiber-optic-speed wireless communication, M Fujishima, URSI Asia-Pacific Radio Science Conference (URSI AP-RASC), 2016/08/22, With Invitation, English, Seoul, Korea
  66. 300 GHz CMOS Wireless Communication with Fiber-Optic Speed, M. Fujishima, Workshop on THz Technologies and Applications, 2016/06/14, With Invitation, English, Nanjing China
  67. 300GHz CMOS Wireless Communication with 32 Quadrature-Amplitude-Modulation Capability, M. Fujishima, 229th ECS Meeting, 2016/05/31, With Invitation, English, San Diego, CA, USA
  68. 300GHz CMOS Wireless Transmitter, M. Fujishima, EMERGING TECHNOLOGIES 2016 (ETCMOS 2016), 2016/05/27, With Invitation, English, Montreal, QC, Canada
  69. Device Characterization and Modeling for Terahertz CMOS Design,, Minoru Fujishima,, IEEE MTT-S International Microwave and RF Conference 2015 (IMaRC), 2015/12/10, With Invitation, English, India Hyderabad
  70. Evaluation and Modeling of Terahertz CMOS Devices,, Minoru Fujishima,, 2015 CMOS Emerging Technologies Research Conference, 2015/05/20, With Invitation, English, Canada Vancouver
  71. Power-efficient CMOS Devices for ultrahigh-speed terahertz communication, Minoru Fujishima, The third conference on millimeter wave & terahertz technologies (MMWATT), 2015/01/01, With Invitation, English, IEEE Iran Section, Teheran
  72. Millimeter-wave and Terahertz CMOS Design, Minoru Fujishima, The third conference on millimeter wave & terahertz technologies (MMWATT), 2014/12/30, With Invitation, English, IEEE Iran Section, Teheran
  73. Low-power ultrahigh-speed mobile communication with terahertz CMOS circuits, Minoru Fujishima, 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT), 2014/10/30, With Invitation, English, IEEE SSCS, Beijing
  74. Ultrahigh-Frequency CMOS Designs, Minoru Fujishima, CMOSETR 2014, 2014/07/07, With Invitation, English, ET CMOS Services, Grenoble
  75. Power-Efficient Ultrahigh-Speed CMOS Wireless Communication, Minoru Fujishima, 7th Global Symposium on Millimeter-Waves (GSMM) 2014, 2014/05/23, With Invitation, English, IEEE MTT-S, Seoul
  76. Millimeter-wave and TeraHertz CMOS Design, Minoru Fujishima, 2014/05/17, With Invitation, English, Millimeter-wave and its h igher-frequency part “terahertz” have attracted many attentions to open up new applications such as ultr ahigh-speed wireless communication and noninva sive transparent image. Utilizing recent transistor performance in CMOS technology, those new applications are being realized by commercial CMOS process. Since base-band signal processors are indispensable in a system level, CMOS circuits for millimeter-wave and terahertz have advantage against compound-semiconductor circuits from viewpoint of high-volume production and low-power consumption. In this talk, we will discuss millimeter-wave and terahertz CMOS design by clarifying difference from conventional microwave design. Design examples from system level to building block for mobile high-speed communication are also discussed.
  77. Millimeter-wave and TeraHertz CMOS Design, Minoru Fujishima, Tsinghua University Seminar, 2014/05/16, With Invitation, English, Tsinghua University, Beijing, Millimeter-wave and its h igher-frequency part “terahertz” have attracted many attentions to open up new applications such as ultr ahigh-speed wireless communication and noninva sive transparent image. Utilizing recent transistor performance in CMOS technology, those new applications are being realized by commercial CMOS process. Since base-band signal processors are indispensable in a system level, CMOS circuits for millimeter-wave and terahertz have advantage against compound-semiconductor circuits from viewpoint of high-volume production and low-power consumption. In this talk, we will discuss millimeter-wave and terahertz CMOS design by clarifying difference from conventional microwave design. Design examples from system level to building block for mobile high-speed communication are also discussed.
  78. Terahertz CMOS Electronics for Future Mobile Applications , Minoru Fujishima, 225th ECS Meeting, 2014/05/12, With Invitation, English, The Electrochemical Society, Orland, The highest operation frequency of RFCMOS circuits has risen exponentially over the years. This improved performance has culminated in new wireless and wireline communication standards with higher data rates. There has been a tenfold increase in the wireless data rate every four years, being much faster than the increasing speed of wireline communications. If this trend is to continue, 100 Gb/s will be realized around 2020. In order to realize a terahertz CMOS transceiver with 100 Gb/s, not only is device performance improvement through miniaturization important, but also circuit design techniques that move the circuit operation frequency close to fmax must be developed. Furthermore, one has to remind that stringent practical issue, power consumption, still remains for mobile applications even if the terahertz transceiver is technically feasible. Namely, one must consider how the power consumption maintains at the level of the current mobile applications even when ultrahigh data rate is acquired. This challenging issue implies that the near-fmax design technique is extremely useful because the fmax of a given MOSFET is a function of bias voltage, and reduced-fmax circuits can have superior power efficiency. To utilize near-fmax technology, firstly, one has to know the optimum bias point giving maximum operation frequency under limited power consumption. To achieve low-power operation at a high operation frequency, it is important to choose an appropriate set of bias voltages. The FP (frequency-power) plot is a useful guide to choosing such a set, which shows the gate and drain bias dependences of fmax and power consumption per unit gate width of an NMOSFET. The power-efficient bias points can be found from the FP plot as the points on the power contours where fmax is maximized. The power-efficient bias points give the best fmax for the given power consumption. Since the highest possible fmax of a given MOSFET is realized away from the power-efficient bias points, it is best to avoid the bias point that maximizes the transconductance (gm) if power efficiency is an important design goal. By reducing the actual fmax to be used through tracing the power-efficient bias curve, power consumption can be reduced considerably. As can be observed in 65- and 40-nm CMOS processes, reducing fmax enables exponential power reduction, where the reduction rate is 1/10 every 75 GHz in both process technologies. When trying to obtain the highest possible performance of a MOSFET, the MOSFET must be biased such that its highest fmax is realized. If, on the other hand, the power consumption is a great concern in a terahertz mobile application, one can opt for a reduced-fmax design. Power-efficient bias points can be found in the FP plot. Continued improvement of the device performance is thus essential for achieving the ultimate low-power high-speed wireless communication even in mobile application.
  79. A 300GHz CMOS Transceiver Aiming for Long-Range Sub-Terahertz Communications, M. Fujishima, 2021 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2021/08/26, With Invitation, English, Online
  80. A 300GHz CMOS Transceiver Targeting 6G, M. Fujishima, 2021 IEEE 14th International Conference on ASIC (ASICON), 2021/09/28, With Invitation, English, Online
  81. Technical issues in sub-terahertz band communications and 300 GHz CMOS transceivers, M. Fujishima, 9th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies (RJUSE TeraTech-2021), 2021/11/03, With Invitation, English, Online
  82. Advances in Terahertz CMOS for 6G,, M. Fujishima, 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2021/12/09, With Invitation, English, Online
  83. Sub-Terahertz Transceivers in Silicon, M. Fujishima, ISSCC Forum, 2022/02/25, With Invitation, English, Online
  84. A 180-370-GHz Wide-Bandwidth Marchand Balun with Lateral Ground Wall, Z. Yan, S. Tanaka, T. Yoshida, M. Fujishima, 2023 Thailand-Japan Microwave (TJMW), 2023/12/14, Without Invitation, English
  85. 300-GHz CMOS Transceivers and Future of Sub-Terahertz Communication, M. Fujishima, URSI General Assembly and Scientific Symposium (URSI GASS 2023), 2023/08/22, With Invitation, English
  86. Sub-Terahertz Communication and Its Future Towards 6G, M. Fujishima, 2023 IEEE 15th International Conference on ASIC (ASICON 2023), 2023/10/27, With Invitation, English
  87. Evolving Terahertz Wireless Communication: Achieving Ultrahigh Data Rates through Efficient Beam Steering, M. Fujishima, IEEE 2023 Asian Solid-State Circuit Conference (A-SSCC 2023), 2023/11/07, With Invitation, English
  88. Highly Efficient Wireless Communications Using 300-GHz-Band Phased Arrays, M. Fujishima, 2023 Asia-Pacific Microwave Conference (APMC 2023), 2023/12/07, With Invitation, English
  89. 300 GHz Band Wireless Communications and Its Future, M. Fujishima, Terahertz-Related Devices and Technologies (TeraTech 2023), 2023/09/07, With Invitation, English
  90. 25.9-Gb/s 259-GHz phased-array CMOS receiver module with 28º steering range, S. Hara, MH Mubarak, A. Kasamatsu, Y. Sugimoto, K. Sakakibara, K. Takano, T. Yoshida, S. Amakawa, M. Fujishima, The 2024 IEEE Radio and Wireless Symposium (RWS2024), 2024/01/22, Without Invitation, English
  91. Sub-Terahertz Communication and Its Future Towards 6G, M. Fujishima, 2023 Thailand-Japan Microwave (TJMW), 2023/12/15, With Invitation, English
  92. Overcoming Challenges for Ultrahigh-Speed Sub-Terahertz Wireless Communication, M. Fujishima, European Conference on Networks and Communications (EUCNC2024), 2024/06/03, With Invitation, English
  93. Pioneering Ultrahigh-Speed Terahertz Communication for 6G: Challenges and Opportunities, M. Fujishima, IEEE MTT-S International Microwave Symposium (IMS 2024), 2024/06/16, With Invitation, English

Awards

  1. 2024/02/18, Most Valuable Associate Editor, IEEE Journal of Solid-State Circuits
  2. 2017/09/01, IEEE International Symposium on Radio-Frequency Integration Technology RFIT Award, IEEE International Symposium on Radio-Frequency Integration Technology General Chair
  3. 2019/05/23, Global Symposium on Millimeter Waves 2019 (GSMM 2019) Best Paper Award, GSMM2019 General Chair GSMM2019 Award Committee Chair, 300-GHz Wireless Data Transmission System with Low-SNR CMOS RF Front End
  4. 2020/02/17, 2020 IEEE International Solid-State Circuits Conference 2019 Demonstration Session Certificate of Recognition, International Solid-State Circuits Conference (2020 ISSCC), An 80Gb/s 300GHz-Band Single-Chip CMOS Transceiver

Patented

  1. Patent, JP5500679, 2014/03/20
  2. Patent, 5665074, 2014/12/19
  3. Patent, 8976846, 2015/03/10
  4. 9294320, 2016/03/22

External Funds

Acceptance Results of Competitive Funds

  1. KAKENHI(Grant-in-Aid for Scientific Research (A)), 2022, 2024
  2. ‐, 2022//0/4/, 2023//0/3/
  3. ‐, 2022//0/9/, 2023//0/3/
  4. Research and Development Project of the Enhanced Infrastructures for Post-5G Information and Communication Systems, 2020//1/2/, 2023//1/1/
  5. Strategic Information and Communications R&D Promotion Programme, 2013/08/29, 2014/03/14
  6. Strategic Basic Research Programs(CREST), 2009/08/01, 2015/03/31
  7. KAKENHI, 2018, 2020
  8. KAKENHI(Grant-in-Aid for Scientific Research (A)), 2018, 2020

Social Activities

Organizing Academic Conferences, etc.

  1. RFIT 2020, General Chair, 2020/09, 2020/09
  2. IEICE General Conference, General Chair, 2024/03, 2024/03
  3. IEEE SSCS Kansai Chapter, 2014/07, 2014/07
  4. International Workshop on Advanced Solid-State Circuits in Tokyo, IEEE SSCS Kansai Chapter, 2014/11, 2014/11
  5. International Workshop on Advanced Solid-State Circuits in Kyoto , IEEE SSCS Kansai Chapter, 2014/11, 2014/11
  6. 2014/04, 2014/04
  7. 2014/05, 2014/05
  8. 2014/06, 2014/06
  9. 2014/07, 2014/07
  10. 2014/07, 2014/07
  11. 2014/08, 2014/08
  12. 2014/10, 2014/10
  13. 2014/12, 2014/12
  14. 2014/12, 2014/12
  15. 2015/01, 2015/01
  16. 2015/03, 2015/03
  17. 2015/03, 2012/03
  18. 2015/03, 2015/03
  19. Vietnam - Japan MicroWave Workshop (VJMW2014), 2014/11, 2014/11
  20. 2015/04, 2015/04
  21. 2015/04, 2015/04
  22. 2015/05, 2015/05
  23. 2015/06, 2015/06
  24. 2015/07, 2015/07
  25. 2015/08, 2015/08
  26. 2015/08, 2015/08
  27. 2015/10, 2015/10
  28. 2015/11, 2015/11
  29. 2015/11, 2015/11
  30. 2015/12, 2015/12
  31. 2015/12, 2015/12
  32. 2016/03, 2016/03
  33. 2016/03, 2016/03
  34. 2016/04, 2016/04
  35. 2016/05, 2016/05
  36. 2016/08, 2016/08
  37. 2016/09, 2016/09
  38. 2016/12, 2016/12
  39. 2017/01, 2017/01
  40. 2017/03, 2017/03
  41. 2017/02, 2017/02
  42. 2017/02, 2017/02
  43. 2017/03, 2017/03
  44. 2017/03, 2017/03
  45. 2017/04, 2017/04
  46. 2017/05, 2017/05