AKINOBU TERAMOTO

Last Updated :2021/04/23

Affiliations, Positions
Research Institute for Nanodevice and Bio Systems, Professor
Web Site
E-mail
teramo10hiroshima-u.ac.jp

Basic Information

Major Professional Backgrounds

  • 2021/04/01, Hiroshima University, Research Institute for Nanodevice and Bio Systems, Director
  • 2019/06/01, Hiroshima University, Research Institute for Nanodevice and Bio Systems, Professor
  • 2019/06/01, Tohoku University, New Industry Creation Hatchery Center, Visiting Professor
  • 2014/07/01, 2019/05/31, TOHOKU UNIVERSITY, New Industry Creation Hatchery Center, Professor
  • 2007/04/01, 2014/06/30, TOHOKU UNIVERSITY, New Industry Creation Hatchery Center, Associate Professor
  • 2002/04/01, 2010/01/01, Tohoku University, New Industry Creation Hatchery Center, Associate Professor
  • 1992/04/01, 2002/02/28, MItsubishi Electric Corporation, LSI Laboratory, Engineer

Educational Backgrounds

  • Tohoku University, Graduate School of Engineering, Elcectronic Engineering, Japan, 2000/10/01, 2001/09/12
  • Tohoku University, Graduate School of Engineering, Electronic Enginnering, Japan, 1990/04/01, 1992/03/27
  • TOHOKU UNIVERSITY, Faculty of Engineering, Electronic Engineering, Japan, 1986/04/01, 1990/03/28

Academic Degrees

  • MS (Electronic Engineering), TOHOKU UNIVERSITY
  • Ph D (Engineering), TOHOKU UNIVERSITY

Research Fields

  • Engineering;Electrical and electronic engineering;Electron device / Electronic equipment
  • Engineering;Electrical and electronic engineering;Electronic materials / Electric materials

Research Keywords

  • Semiconductor, Reliability, Evaluation, device structure
  • semiconductor
  • process
  • insulator

Affiliated Academic Societies

Educational Activity

Course in Charge

  1. 2021, Liberal Arts Education Program1, 4Term, Industry and Technology
  2. 2021, Graduate Education (Master's Program) , 1Term, LSI Devices and Process Engineering
  3. 2021, Graduate Education (Master's Program) , 1Term, Introduction of the Electronics
  4. 2021, Graduate Education (Master's Program) , First Semester, Seminar on Electronics A
  5. 2021, Graduate Education (Master's Program) , Second Semester, Seminar on Electronics B
  6. 2021, Graduate Education (Master's Program) , Academic Year, Academic Presentation in Electronics
  7. 2021, Graduate Education (Master's Program) , 1Term, Exercises in Electronics A
  8. 2021, Graduate Education (Master's Program) , 2Term, Exercises in Electronics A
  9. 2021, Graduate Education (Master's Program) , 3Term, Exercises in Electronics B
  10. 2021, Graduate Education (Master's Program) , 4Term, Exercises in Electronics B
  11. 2021, Graduate Education (Master's Program) , 1Term, LSI Devices and Process Engineering
  12. 2021, Graduate Education (Master's Program) , 1Term, Introduction of the Electronics
  13. 2021, Graduate Education (Master's Program) , Academic Year, Advanced Study in Quantum Matter
  14. 2021, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Quantum Matter

Research Activities

Academic Papers

  1. Impact on the Conductance Method of the Asymmetry in the AC Response Induced by Interface Trap Levels, ECS Journal of Solid State Science and Technology, 10(4), 043004, 20210420
  2. Modification of copper and copper oxide surface states due to isopropyl alcohol treatment toward area-selective processes, Journal of Vacuum Science & Technology A, 39(1), 013403_1-10, 20201214
  3. Plasma resistance of sintered and ion-plated yttrium oxyfluorides with various Y, O, and F composition ratios for use in plasma process chamber, Journal of Vacuum Science & Technology A, 38(4), 043003_1-9, 20200611
  4. Influence of silicon wafer surface roughness on semiconductor device characteristics, Japanese Journal of Applied Physics, 59, SMMB06_1-6, 20200526
  5. Resistance Measurement Platform for Statistical Analysis of Emerging Memory Materials, IEEE Transactions on Semiconductor Manufacturing, 33(2), 232-239, 20200505
  6. Study on Influence of O2 Concentration in Wafer Cleaning Ambient for Smoothness of Silicon (110) Surface Appearing at Sidewall of Three-Dimensional Transistors, ECS Transactions, 97(3), 23-29, 20200501
  7. Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition, Journal of Vacuum Science & Technology A, 38(3), 032408_1-032408_11, 20200406
  8. Low-Temperature Deposition of Silicon Nitride Films Using Ultraviolet-Irradiated Ammonia, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 8(11), P715-P718, 20191112
  9. Impact of CoFeB surface roughness on reliability of MgO films in CoFeB/MgO/CoFeB magnetic tunnel junction, Japanese Journal of Applied Physics, 58, SIIB29_1-SIIB29_6, 20190717
  10. Statistical Analysis of Threshold Voltage Variation Using MOSFETs With Asymmetric Source and Drain, IEEE Electron Device Letters, 39(12), 1836-1839, 20181126
  11. Fabrication technology and characteristics of MOS device on atomically flat silicon surface, Readout, 51, 44-49, 20181015
  12. Impacts of Random Telegraph Noise with Various Time Constants and Number of States in Temporal Noise of CMOS Image Sensors, ITE Transactions on Media Technology and Applications, 6(3), 171-179, 20180701
  13. Statistical Analyses of Random Telegraph Noise in Pixel Source Follower with Various Gate Shapes in CMOS Image Sensor, ITE Transactions on Media Technology and Applications, 6(3), 163-170, 20180701
  14. Monte Carlo Simulation of Nanowires Array Biosensor With AC Electroosmosis, IEEE Transactions on Electron Devices, 65(5), 1932-1938, 201805420
  15. Hole-Trapping Process at Al2O3/GaN Interface Formed by Atomic Layer Deposition, IEEE Electron Device Letters, 38(9), 1309-1312, 20170823
  16. Stable yttrium oxyfluoride used in plasma process chamber, Journal of Vacuum Science & Technology A, 35(2), 021405_1-021405_6, 20170131
  17. Evaluating Work-Function and Composition of ErSix on Various Surface Orientation of Silicon, ECS Journal of Solid State Science and Technology,, 5(10), P608-P613, 20160921
  18. Detection of short range order in SiO2 thin-films by grazing-incidence wide and small-angle X-ray scattering, Journal of Applied Physics, 119, 154103_1-154103_5, 20160419
  19. Proposal of tunneling- and diffusion-current hybrid MOSFET: A device simulation study, Japanese Journal of Applied Physics, 55, 04ED12-1-04ED12-7, 20160314
  20. Impact of doping concentration on 1/ f noise performances of accumulation-mode Si(100) n-MOSFETs, Japanese Journal of Applied Physics, 55, 04ED08_1-04ED08_6, 20160308
  21. Introduction of Atomically Flattening of Si Surface to Large-Scale Integration Process Employing Shallow Trench Isolation, ECS Journal of Solid State Science and Technology, 5(2), P67-P72, 20151124
  22. Structural Analyses of Thin SiO2 Films Formed by Thermal Oxidation of Atomically Flat Si Surface by Using Synchrotron Radiation X-Ray Characterization, ECS Journal of Solid State Science and Technology, 4(8), N96-N98, 20150616
  23. Atomically flattening of Si surface of silicon on insulator and isolation-patterned wafers, Japanese Journal of Applied Physics, 54, 04DA04_1-04DA04_7, 20150223
  24. Mass densification and defect restoration in chemical vapor deposition silicon dioxide film using Ar plasma excited by microwave, Journal of Vacuum Science & Technology A, 32(5), 051502-1-051502-9, 20140709
  25. Extraction of time constants ratio over nine orders of magnitude for understanding random telegraph noise in metal–oxide–semiconductor field-effect transistors, Japanese Journal of Applied Physics, 53, 04EC19_1-04EC19_7, 20140305
  26. Carrier mobility characteristics of (100), (110), and (551) oriented atomically flattened Si surfaces for fin structure design of multi-gate metal–insulator–silicon field-effect transistors, Japanese Journal of Applied Physics, 53, 04EC04_1-04EC04_7, 20140207
  27. A Statistical Evaluation of Random Telegraph Noise of In-Pixel Source Follower Equivalent Surface and Buried Channel Transistors, IEEE Transactions on Electron Devices, 60(10), 3555-3561, 20130918
  28. A Test Circuit for Extremely Low Gate Leakage Current Measurement of 10 aA for 80 000 MOSFETs in 80 s, IEEE Transactions on Semiconductor Manufacturing, 26(3), 288-295, 20130731
  29. Low-Interface-Trap-Density and High-Breakdown-Electric-Field SiN Films on GaN Formed by Plasma Pretreatment Using Microwave-Excited Plasma-Enhanced Chemical Vapor Deposition, IEEE Transactions on Electron Devices, 60(6), 1916-1922, 20130503
  30. Angle-resolved photoelectron spectroscopy study on interfacial transition layer and oxidation-induced residual stress in Si(100) substrate near the interface, Microelectronic Engineering, 109, 197-199, 20130402
  31. Stress induced leakage current generated by hot-hole injection, Microelectronic Engineering, 109, 298-301, 20130328
  32. ★, High Quality SiO2/Al2O3 Gate Stack for GaN Metal-Oxide-Semiconductor Field-Effect Transistor, Japanese Journal of Applied Physics, 52, 04CF09_1-04CF09_6, 20130321
  33. Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species, Japanese Journal of Applied Physics, 52, 031302_1-031302_14, 20130222
  34. Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow- k Dielectric Fluorocarbon on Advanced Cu Interconnects, Japanese Journal of Applied Physics, 51, 05EC03_1-05EC03_6, 20120512
  35. A Simple Test Structure for Evaluating the Variability in Key Characteristics of a Large Number of MOSFETs, IEEE Transactions on Semiconductor Manufacturing, 25(2), 145-154, 20120504
  36. Cu Single Damascene Integration of an Organic Nonporous Ultralow- k Fluorocarbon Dielectric Deposited by Microwave-Excited Plasma-Enhanced CVD, IEEE Transactions on Electron Devices, 59(5), 1445-1453, 20120425
  37. Recovery Characteristics of Anomalous Stress-Induced Leakage Current of 5.6 nm Oxide Films, Japanese Journal of Applied Physics, 51, 04DC02_1-04DC02_6, 20120420
  38. Hole Mobility in Accumulation Mode Metal-Oxide-Semiconductor Field-Effect Transistors, Japanese Journal of Applied Physics, 51, 04DC07_1-04DC07_6, 20120420
  39. High Integrity SiO2 Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal-Oxide-Semiconductor Heterojunction Field-Effect Transistor on Si Substrate, Japanese Journal of Applied Physics, 51, 04DF03_1-04DF03_4, 20120420
  40. On the Interface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology, Japanese Journal of Applied Physics, 51, 02BA01_1-02BA01_6, 20120220
  41. Densification of chemical vapor deposition silicon dioxide film using oxygen radical oxidation, Journal of Applied Physics, 111(3), 034101_1-034101_7, 20120201
  42. A Test Circuit for Statistical Evaluation of p-n Junction Leakage Current and its Noise, IEEE Transactions on Semiconductor Manufacturing, 25(3), 303-309, 20120131
  43. Advanced Direct-Polishing Process Development of Non-Porous Ultralow-k Dielectric Fluorocarbon with Plasma Treatment on Cu Interconnects, Journal of The Electrochemical Society, 159(4), H407-H411, 20120125
  44. Highly Reliable Radical SiO2 Films on Atomically Flat Silicon Surface Formed by Low Temperature Pure Ar Annealing, Japanese Journal of Applied Physics, 50, 10PB05_1-10PB05_7, 20111020
  45. Large-Scale Test Circuits for High-Speed and Highly Accurate Evaluation of Variability and Noise in Metal-Oxide-Semiconductor Field-Effect Transistor Electrical Characteristics, Japanese Journal of Applied Physics, 50, 106701_1-106701_11, 20111020
  46. Tribological Study of Brush Scrubbing in Post-Chemical Mechanical Planarization Cleaning in Non-porous Ultralow-k Dielectric/Cu Interconnects, Journal of The Electrochemical Society, 158(11), H1145-H1151, 20111005
  47. Evaluation for Anomalous Stress-Induced Leakage Current of Gate SiO2 Films Using Array Test Pattern, IEEE Transactions on Electron Devices, 58(10), 3307-3313, 20110921
  48. Formation speed of atomically flat surface on Si (100) in ultra-pure argon, Microelectronic Engineering, 88(10), 3133-3139, 20110629
  49. Visualization of Single Atomic Steps on An Ultra-Flat Si(100) Surface by Advanced Differential Interference Contrast Microscopy, Electrochemical and Solid-State Letters, 14(9), H351-H353, 20110609
  50. Electrical Characteristics of Novel Non-porous Low-k Dielectric Fluorocarbon on Cu Interconnects for 22 nm Generation and Beyond, Japanese Journal of Applied Physics, 50(5), 05EB02_1-05EB02_5, 20110520
  51. Tribological Effects of Brush Scrubbing in Post Chemical Mechanical Planarization Cleaning on Electrical Characteristics in Novel Non-porous Low-k Dielectric Fluorocarbon on Cu Interconnects, Japanese Journal of Applied Physics, 50(5), 05EC07_1-05EC07_6, 20110520
  52. Analysis of the Low-Frequency Noise Reduction in Si(100) Metal-Oxide-Semiconductor Field-Effect Transistors, Japanese Journal of Applied Physics, 50(4), 04DC01_1-04DC01_6, 20110420
  53. Impact of Channel Direction Dependent Low Field Hole Mobility on (100) Orientation Silicon Surface, Japanese Journal of Applied Physics, 50(4), 04DC03_1-04DC03_6, 20110420
  54. High-Rate Deposition of Amorphous Silicon Films by Microwave-Excited High-Density Plasma, Japanese Journal of Applied Physics, 50(3), 036502_1-036502_6, 20110322
  55. Mesoscopic-Scale and Small Strain Field beneath SiO2/Si Interface Revealed by a Multiple-Wave X-ray Diffraction Phenomenon-Depth of the Strain Field, e-Journal of Surface Science and Nanotechnology, 9, 47-50, 20110219
  56. Electrical Properties of Metal-Oxide-Containing SiO2 Films Formed by Organosiloxane Sol–Gel Precursor, Japanese Journal of Applied Physics, 49(11), 111503_1-111503_5, 20101122
  57. Depth Profile of Nitrogen Atoms in Silicon Oxynitride Films Formed by Low-Electron-Temperature Microwave Plasma Nitridation, Japanese Journal of Applied Physics, 49(9), 091301_1-091301_8, 20100921
  58. Relation Between the Mobility,1/f Noise, and Channel Direction in MOSFETs Fabricated on (100) and (110) Silicon-Oriented Wafers, IEEE Transactions on Electron Devices, 57(7), 1597-1607, 20100623
  59. End-Point Detection of Ta/TaN Chemical Mechanical Planarization via Forces Analysis, Japanese Journal of Applied Physics, 49(5), 05FC01_1-05FC01_4, 20100520
  60. ★, Statistical Evaluation of Process Damage Using an Arrayed Test Pattern in a Large Number of MOSFETs, IEEE Transactions on Electron Devices, 57(6), 1310-1318, 20100519
  61. Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals, Applied Physics Letters, 96(17), 173103_1-173103_3, 20100427
  62. Light-Emitting Diode Based on ZnO by Plasma-Enhanced Metal-Organic Chemical Vapor Deposition Employing Microwave Excited Plasma, Japanese Journal of Applied Physics, 49(4), 04DG14_1-04DG14_4, 20100420
  63. Experimental Investigation of Effect of Channel Doping Concentration on Random Telegraph Signal Noise, Japanese Journal of Applied Physics, 49(4), 04DC07_1-04DC07_5, 20100420
  64. Analysis of Hundreds of Time Constant Ratios and Amplitudes of Random Telegraph Signal with Very Large Scale Array Test Pattern, Japanese Journal of Applied Physics, 49(4), 04DC06_1-04DC06_4, 20100420
  65. Low Contact Resistivity with Low Silicide/p+-Silicon Schottky Barrier for High-Performance p-Channel Metal-Oxide-Silicon Field Effect Transistors, Japanese Journal of Applied Physics, 49(4), 04DA03_1-04DA03_5, 20100420
  66. Very High Performance CMOS on Si(551) Using Radical Oxidation Technology and Accumulation-Mode SOI Device Structure, Journal of The Electrochemical Society, 157(3), H389-H393, 20100204
  67. Modelling of the hole mobility in p-channel MOS transistors fabricated on (110) oriented silicon wafers, Solid-State Electronics, 54(4), 420-426, 20091209
  68. Characterization of MgZnO films grown by plasma enhanced metal-organic chemical vapor deposition, Thin Solid Films, 518(11), 2953-2956, 20091028
  69. The electric properties of low-magnetic-loss magnetic composites containing Zn-Ni-Fe particles, Journal of Physics: Condensed Matter, 21(43), 436009_1-436009_5, 20091008
  70. Hole Mobility in Si(110) p-MOS Transistors, ECS Transactions, 16(40), 7-12, 20091000
  71. Low-Loss Composite Material Containing Fine Zn-Ni-Fe Flakes for High-Frequency Applications, IEEE Transactions on Magnetics, 45(10), 4337-4340, 20090918
  72. High-Frequency Propagation on Printed Circuit Board Using a Material With a Low Dielectric Constant, a Low Dielectric Loss, and a Flat Surface, EEE Transactions on Components and Packaging Technologies, 32(2), 415-423, 20090722
  73. In situ Observation of Grain Growth on Electroplated Cu Film by Electron Backscatter Diffraction, Japanese Journal of Applied Physics, 48(6), 066507_1-066507_8, 20090622
  74. Three-step Room Temperature Wet Cleaning Process for Silicon Substrate, Solid State Phenomena, 145-146, 381-384, 20090606
  75. Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces, IEICE TRANSACTIONS on Electronics, E92-C(5), 664-670, 20090501
  76. Reduction of Scratch on Brush Scrubbing in Post CMP Cleaning by Analyzing Contact Kinetics on Ultra Low-k Dielectric, ECS Transactions, 19(7), 103-109, 20090500
  77. Impact of New Approach to Improve MOSFETs Performance with Ultrathin Gate Insulator, ECS Transactions, 19(4), 65-70, 20090500
  78. UV-Raman Spectroscopy Study on SiO2/Si Interface, ECS Transactions, 19(2), 55-66, 20090500
  79. Effects of Ion-Bombardment-Assist and High Temperature on Growth of Zinc Oxide Films by Microwave Excited High Density Plasma Enhanced Metal Organic Chemical Vapor Deposition, Japanese Journal of Applied Physics, 48(4), 04C135_1-04C135_6, 20090420
  80. Deposition of Microcrystalline Si1-xGex by RF Magnetron Sputtering on SiO2 Substrates, Japanese Journal of Applied Physics, 48(4), 04C124_1-04C124_6, 20090420
  81. Complementary Metal-Oxide-Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface, Japanese Journal of Applied Physics, 48(4), 04C048_1-04C048_6, 20090420
  82. A Study on Very High Performance Novel Balanced Fully Depleted Silicon-on-Insulator Complementary Metal-Oxide-Semiconductor Field-Effect Transistors on Si(110) Using Accumulation-Mode Device Structure for Radio-Frequency Analog Circuits, Japanese Journal of Applied Physics, 48(4), 04C047_1- 04C047_4, 20090420
  83. Impact of Tungsten Capping Layer on Yttrium Silicide for Low-Resistance n+-Source/Drain Contacts Japanese Journal of, Japanese Journal of Applied Physics, 48(4), 04C046_1-04C046_5, 20090420
  84. Anomalous Random Telegraph Signal Extractions from a Very Large Number of n-Metal Oxide Semiconductor Field-Effect Transistors Using Test Element Groups with 0.47 Hz-3.0 MHz Sampling Frequency, Japanese Journal of Applied Physics, 48(4), 04C044_1-04C044_5, 20090420
  85. Effect of Additives in Organic Acid Solutions for Post-CMP Cleaning on Polymer Low-k Fluorocarbon, Journal of The Electrochemical Society, 156(6), H409-H415, 20090401
  86. Inductively coupled plasma generator for an environmentally benign perfluorocarbon abatement system, Journal of Vacuum Science & Technology A, 27(3), 465-470, 20090330
  87. Experimental demonstration and analysis of high performance and low 1/f noise Tri-gate MOSFETs by optimizing device structure, Microelectronic Engineering, 86(7-9), 1786-1788, 20090316
  88. Stress-induced leakage current and random telegraph signal, Journal of Vacuum Science & Technology B, 27(1), 394-401, 20090209
  89. Different mechanism to explain the 1/ f noise in n- and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers, Journal of Vacuum Science & Technology B, 27(1), 394-401, 20090209
  90. Characterization for High-Performance CMOS Using In-Wafer Advanced Kelvin-Contact Device Structure, IEEE Semiconductor Manufacturing, 22(1), 291-298, 20090204
  91. ★, Atomically Flat Silicon Surface and Silicon/Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal-Insulator-Silicon FETs, IEEE Transactions on Electron Devices, 56(2), 291-298, 20090128
  92. Effect of Various Cleaning Solutions and Brush Scrubber Kinematics on the Frictional Attributes of Post Copper CMP Cleaning Process, Solid State Phenomena, 145-146, 363-366, 20090106
  93. Damage-Free Post-CMP Cleaning Solution for Low-k Fluorocarbon on Advanced Interconnects, Solid State Phenomena, 145-146, 189-192, 20090106
  94. Angle-resolved photoelectron study on the structures of silicon nitride films and Si3N4 /Si interfaces formed using nitrogen-hydrogen radicals, Journal of Applied Physics, 104, 114112-1-114112-8, 20081211
  95. High-Efficiency PFC Abatement System Utilizing Plasma Decomposition and Ca(OH)2/Cao Immobilization, IEEE Transactions on Semiconductor Manufacturing, 21, 668-675, 20081105
  96. Three-Step Room-Temperature Cleaning of Bare Silicon Surface for Radical-Reaction-Based Semiconductor Manufacturing, Journal of The Electrochemical Society, 156, H10-H17, 20081030
  97. Accurate negative bias temperature instability lifetime prediction based on hole injection, Microelectronics Reliability, 48, 1649-1654, 20080822
  98. High Permeability and Low Loss Ni–Fe Composite Material for High-Frequency Applications, IEEE Transactions on Magnetics, 44, 2100-2106, 20080822
  99. Nitrogen Profile Study for SiON Gate Dielectrics of Advanced Dynamic Random Access Memory, Japanese Journal of Applied Physics, 47(7), 5380-5834, 20080711
  100. Formation and Property of Yttrium and Yttrium Silicide Films as Low Schottcky Barrier material for n-Type Silicon, Japanese Journal of Applied Physics, 47(4), 3138-3141, 20080425
  101. Characterization of Zinc Oxide Films Grown by a Newly Developed Plasma Enhanced Metal Organic Chemical Vapor Deposition Employing Microwave Excited High Density Plasma, Japanese Journal of Applied Physics, 47(4), 2994-2998, 20080425
  102. Performance Comparison of Ultrathin Fully Depleted Silicon-on-Insulator Inversion-, Intrinsic-, and Accumulation-Mode Metal-Oxide-Semiconductor Field-Effect Transistors, Japanese Journal of Applied Physics, 47(4), 2668-2671, 20080425
  103. Evaluation of New Amorphous Hydrocarbon Film for Copper Barrier Dielectric Film in Low-k Copper Metallization, Japanese Journal of Applied Physics, 47(4), 2531-2534, 20080425
  104. Low-Dielectric-Constant Nonporous Fluorocarbon Films for Interlayer Dielectric, Japanese Journal of Applied Physics, 47(4), 2531-2534, 20080425
  105. Tantalum Nitride Sputtering Deposition with Xe on Fluorocarbon for Cu Interconnects, Journal of The Electrochemical Society, 155(5), H323-H328, 20080319
  106. Evaluation of Si3N4/Si interface by UV Raman spectroscopy, Applied Surface Science, 254, 6229-6231, 20080318
  107. ★, Atomically Flat Silicon Surface and Silicon/Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal–Insulator–Silicon FETs, IEEE Transactions on Electron Devices, 56(2), 291-298, 20080128
  108. Damage-free microwave-excited plasma etching without carrier deactivation of heavily doped Si under thin silicide layer, Journal of Vacuum Science & Technology A, 26(1), 8-16, 20071214
  109. High performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs, Microelectronic Engineering, 84, 2105-2108, 20070600
  110. ★, Very High Carrier Mobility for High Performance CMOS on Si(110) surface, IEEE Transactions on Electron Devices, 54(6), 1438-1445, 20070529
  111. Revolutional Process of Silicon Technologies Exhibiting Very High Speed Performance Over 50 GHz Clock Rate, IEEE Transactions on Electron Devices, 54(6), 1471-1477, 20070529
  112. NBTI Mechanism Based on Hole-Injection for Accurate Lifetime Prediction, ECS Transactions, 6(3), 229-243, 20070500
  113. Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si(110) Surface, ECS Transactions, 6(4), 101-106, 20070500
  114. Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage, ECS Transactions, 6(4), 113-118, 20070500
  115. Development of Microwave-Excited Plasma-Enhanced Metal-rganic Chemical Vapor Deposition System for Forming Ferroelectric Sr2(Ta1-x,Nbx)2O7 Thin Film on Amorphous SiO2, Japanese Journal of Applied Physics, 46(4B), 2200-2204, 20070424
  116. Very Low Bit Error Rate in Flash Memory Using Tunnel Dielectrics Formed by Kr/O2/NO Plasma Oxynitridation, Japanese Journal of Applied Physics, 46(4B), 2148-2152, 20070424
  117. New Statistical Evaluation Method for the Variation of Metal-Oxide-Semiconductor Field-Effect Transistors, Japanese Journal of Applied Physics, 46(4B), 2054-2057, 20070424
  118. Electric Characteristics of Si3N4 Films Formed by Directly Radical Nitridation on Si(110) and Si(100) Surfaces, Japanese Journal of Applied Physics, 46(4B), 1895-1898, 20070424
  119. Low Leakage Current and Low Resistivity p+n Diode on Si(110) Fabricated by Ga+ and B+ Dual Ion Implantation for Low Temperature Source-Drain Activation, Japanese Journal of Applied Physics, 46(4B), 1848-1852, 20070424
  120. Accuracy and Applicability of Low Frequency C-V Measurement Methods for Characterization of Ultra-thin Gate Dielectrics with Large Current, IEEE Transactions on Electron Devices, 54(5), 20070423
  121. Subnitride and valence band offset at Si3N4/Si interface formed using nitrogen-hydrogen radicals, Applied Physics Letters, 90(12), 123114-1-123114-3, 20070319
  122. High quality gate insulator film formation on SiC using by microwave-excited high-density plasma, Microelectronics Reliability, 47(4-5), 786-789, 20070227
  123. X-ray photoelectron spectroscopy study of dielectric constant for Si compounds, Applied Physics Letters, 89(154103), 1-3, 20061011
  124. Fablication of Pt/Sr2(Ta1-x,Nbx)2O7/IrO2/SiO2/Si Device Window and Metal-Ferroelectric-Metal-Insulator-Si Field-Effect Transistor, Japanese Journal of Applied Physics, 45(9B), 7336-7340, 20060922
  125. Fabrication of Pt/Sr2(Ta1-x,Nbx)2O7/IrO2/SiO2/Si device with large memory window and metal-ferroelectric-metal-insulator-Si field-effect transistor, Japanese Journal of Applied Physics, 45(9B), 7336-7340, 20060922
  126. Circuit level prediction of device performance degradation due to negative bias temperature stress, Microelectronics Reliability, 47(6), 930-936, 20060912
  127. Low voltage 3 V operation of ferroelectric multi-layer stack MFIS structure device formed by plasma physical vapor deposition and oxygen radical treatment, Integrated Ferroelectrics, 81(1), 47-55, 20060817
  128. Examination of degradation mechanism due to negative bias temperature stress a perspective of hole energy for accurate lifetime prediction, Microelectronics Reliability, 47(4), 409-418, 20060804
  129. Control of Nitrogen Depth Profile near Silicon Oxynitride/ Si(100) Interface Formed by Radical Nitridation, Japanese Journal of Applied Physics, 45(8A), 20060804
  130. Relationship between Sr2(Ta1-x,Nbx)2O7 Crystal Phase and RF-Sputtering Plasma Condition for Metal-Ferroelectric-Insulator-Si Structure Device Formation, Japanese Journal of Applied Physics, 45(4B), 3207-3212, 20060425
  131. Impact of Improved High-Performance Si(110)-Oriented Metal-Oxide-Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices, Japanese Journal of Applied Physics, 45(4B), 3110-3116, 20060425
  132. 1/f noise suppression of pMOSFETs fabricated on Si(100) and Si(110) using an alkali-free cleaning process, IEEE Transactions on Electron Devices, 53(4), 851-856, 20060410
  133. Lattice Distortion at SiO2/Si(001) Interface Studied with High-Resolution Rutherford Backscattering Spectroscopy/Channeling, Japanese Journal of Applied Physics, 45(4A), 2467-2469, 20060407
  134. Statistical evaluation of very low gate leakage current for bit error evaluation in Flash Memory, Transactions of the Materials Research Society of Japan, 31(1), 141-144, 20060300
  135. Capacitance-voltage measurement method for ultrathin gate dielectrics using LC resonance circuit, IEEE Transactions on Semiconductor Manufacturing, 19(1), 43-49, 20060206
  136. Subject and View of Semiconductor Technologies for sub-100nm Node, The Journal of Institute of Electronics, Information, and Communication Engineering, 89(2), 109-116, 20060201
  137. New era of silicon technologies due to radical reaction based semiconductor manufacturing, Journal of Physics D: Applied Physics, 39(1), R1-R17, 20051215
  138. Hydrogen termination of Si(110) surfaces upon wet cleaning revealed by highly resolved scanning tunneling microscopy, Journal of Applied Physics, 98(10), 103525 1-8, 20051129
  139. Geometry and bias dependence of low-frequency random telegraph signal and 1/f noise levels in mosfets, Fluctuation and Noise Letters, 5(4), L539-L548, 20051024
  140. Control of nitrogen depth profile and chemical bonding state in silicon oxynitride films formed by radical nitridation, Japanese Journal of Applied Physics, 44(10), 7395-7399, 20051011
  141. High resolution X-ray photoelectron spectroscopy study on Si3N4/Si interface structures and its correlation with hysteresis in C-V curves, ECS Transactions, 1(1), 267-276, 20051000
  142. New NBTI Lifetime Prediction Method for Ultra Thin SiO2 Films, ECS Transactions, 1(1), 147-160, 20051000
  143. Adsorption behavior of various fluorocarbon gases on silicon wafer surface, Japanese Journal of Applied Physics, 44(4B), 2245-2251, 20050421
  144. XPS Study of H-Terminated Silicon Surface under Inert Gas and UHV Annealing, Journal of the Electrochemical Society, 152(2), G163-G167, 20050114
  145. A low-dielectric-constant Sr2(Ta1-x,Nbx)(2)O7 thin film controlling the crystal orientation on an IrO2 substrate for one-transistor-type ferroelectric memory device, Japanese Journal of Applied Physics, 43(4B), 2194-2198, 20040427
  146. High-speed damage-free contact hole etching using dual shower head microwave-excited high-density-plasma equipment, Japanese Journal of Applied Physics, 43(4B), 1784-1787, 20040427
  147. MFIS structure device with a low dielectric constant ferroelectric Sr2(Ta1-x,Nbx)2O7 formed by plasma physical vapor deposition and oxygen radical treatment, Integrated Ferroelectrics, 65(1), 29-38, 20040101
  148. Reliability of silicon nitride gate dielectrics grown at 400 degrees C formed by microwave-excited high-density plasma, Applied Surface Science, 216(1-4), 246-251, 20030630
  149. Oxygen radical treatment applied to ferroelectric thin films, Applied Surface Science, 216(1-4), 239-245, 20030630
  150. Ferroelectric Sr2(Ta1-x, Nbx)(2)O7 with a low dielectric constant by plasma physical vapor deposition and oxygen radical treatment, Japanese Journal of Applied Physics, 42(4B), 2050-2054, 20030401
  151. High-quality silicon oxide film formed by diffusion region plasma enhanced chemical vapor deposition and oxygen radical treatment using microwave-excited high-density plasma, Japanese Journal of Applied Physics, 42(4B), 1911-1915, 20030401
  152. A technology for reducing flicker noise for ULSI applications, Japanese Journal of Applied Physics, 42(4B), 2106-2109, 20030401
  153. Saturation phenomenon of stress-induced gate leakage current, Japanese Journal of Applied Physics, 41(4B), 2335-2338, 20020400
  154. Excess Currents Induced by Hot Hole Injection and FN Stress in Thin SiO2 Films, IEEE Transactions on Electron Devices, 48(5), 868-873, 20010500
  155. ★, Time-dependent dielectric breakdown of SiO2 films in a wide electric field range, Microelectronics Reliability, 41, 47-52, 20001222
  156. Simulation of dopant redistribution during gate oxidation including transient-enhanced diffusion caused by implantation damage, Japanese Journal of Applied Physics, 39(5A), 2565-2576, 20000500
  157. Precise Control of Nitrogen Profiles and Nitrogen Bond States for Highly Reliable N2O-Grown Oxynitride, Journal of the Electrochemical Society, 147(5), 1888-1892, 20000500
  158. Angle resolved X-ray photoelectron spectroscopic study of ultrathin oxynitrides, Materials Science in Semiconductor Processing, 2(3), 225-231, 19991000
  159. Effects of N distribution on charge trapping and TDDB characteristics of N2O annealed wet oxide, IEEE Transactions on Electron Devices, 46(6), 1121-1126, 19990600
  160. Origin of positive charge generated in thin SiO2 films during high-field electrical stress, IEEE Transactions on Electron Devices, 46(5), 947-953, 19990500
  161. Characterization of extrinsic oxide breakdown on thin dielectric oxide, Ieice Transactions on Electronics, E82C(4), 589-592, 19990400
  162. Improved reliability of NO treated NH3-nitrided oxide with regard to O2 annealing, SOLID-STATE ELECTRONICS, 42(6), 921-924, 19980600
  163. High performance 0.2 um dual gate complementary MOS technologies by suppression of transient-enhanced-diffusion using rapid thermal annealing, Japanese Journal of Applied Physics, 37(3B), 1054-1058, 19980300
  164. Highly Reliable SiO2 Films Formed by UV-O2 Oxidation, JJAP, 37(3B), 1122-1124, 19980300
  165. Oxide thickness dependence of nitridation effects on TDDB characteristics, Microelectronics Reliability, 37(10-11), 1521-1524, 19971100
  166. Dielectric Brekdown caused by hole-induced-defect in thin SiO2 films, Applied Surface Science, 117/118, 245-248, 19970602
  167. Electron traps and excess current induced by hot-hole injection into thin SiO2 films, Journal of the Electrochemical Society, 143(10), 3377-3383, 19961000
  168. Clarification of nitridation effect on oxide formation methods, Japanese Journal of Applied Physics, 35(2B), 1454-1459, 19960200
  169. Model for the Substrate Hole Current Based on Thermionic Hole Emission from the Anode during Fowlar-Nordheim Electron-Tunneling in N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors, Journal of Applied Physics, 77(7), 3277-3282, 19950401
  170. Charge-Transport in Ultrathin Silicon Nitrides, Journal of the Electrochemical Society, 142(3), 990-996, 19950300
  171. Preoxide-Controlled Oxidation for Very Thin Oxide-Films, The Japan Society of Applied Physics, 32(1B), 294-297, 19930100
  172. Very Thin Oxide Film on a Silicon Surface by Ultraclean Oxidation, Applied Physics Letters, 60(17), 2126-2128, 19920220
  173. Effect of Silicon Wafer In Situ Cleaning on the Chemical Structure of Ultrathin Silicon Oxide Film, Japanese Journal of Applied Physics, 30(12B), 3584-3586, 19911116
  174. Effects of Si Wafer Surface Micro Roughness on Electrical Properties of Very Thin Gate Oxide Films, ULSI Science and Technology, PV91(11), 400-408, 199111
  175. Native Oxide-Growth on Silicon Surface in Ultrapure Water and Hydrogen Peroxide, Japanese Journal of Applied Physics, 29(12), L2392-L2394, 19901020
  176. SiNx Deposition at Low Temperature Using UV-Irradiated NH3, ECS Transactions, 89(4), 31-36
  177. Effect of drain current on appearance probability and amplitude of random telegraph noise in low-noise CMOS image sensors, Japanese Journal of Applied Physics, 57, 04FF08_1-04FF08_6
  178. Experimental investigation of localized stress-induced leakage current distribution in gate dielectrics using array test circuit, Japanese Journal of Applied Physics, 57, 04FE11_1-04FE11_5
  179. Formation technology of flat surface with epitaxial growth on ion-implanted (100)-oriented Si surface of thin silicon-on-insulator, Japanese Journal of Applied Physics, 56, 105503_1 -105503_8
  180. Performances of accumulation-mode n- and p-MOSFETs on Si(110) wafers, Japanese Journal of Applied Physics, 56, 04CD15_1-04CD15_7
  181. Oxidizing Species Dependence of the Interface Reaction during Atomic-Layer-Deposition Process and Post-Deposition-Anneal, ECS Transactions, 75(5), 207-214
  182. Effects of Oxygen Microbubbles on Photoresist Layers under Hot Water Conditions, Journal of Photopolymer Science and Technology, 29(4), 643-646
  183. Low Leakage Current Al2O3 Metal-Insulator-Metal Capacitors Formed By Atomic Layer Deposition at Optimized Process Temperature and O2 Post Deposition Annealing, ECS Transactions, 72(4), 91-100
  184. Introduction of a High Selectivity Etching Process with Advanced SiNx Etch Gas in the Fabrication of FinFET Structures, ECS Transactions, 72(4), 23-30
  185. Effect of Oxygen Impurity on Nitrogen Radicals in Post-Discharge Flows, ECS Transactions, 69(39), 1-9
  186. Effect of Process Temperature of Al2O3 Atomic Layer Deposition Using Accurate Process Gasses Supply System, ECS Transactions, 66(4), 305-314
  187. Low Temperature Atomically Flattening of Si Surface of Shallow Trench Isolation Pattern, ECS Transactions, 66(7), 11-21
  188. Ultra-Low Temperature Flattening Technique of Silicon Surface Using Xe/H2 Plasma, ECS Transactions, 66(5), 277-283
  189. Effect of Hydrogen on Silicon Nitrides Formation by Microwave Excited Plasma Enhanced Chemical Vapor Deposition, ECS Transactions, 66(4), 151-159
  190. Crystallinity Improvement of Ferroelectric BiFeO3 Thin Film by Oxygen Radical Treatment, ECS Transactions, 66(5), 261-267
  191. Surface Metal Cleaning of GaN Surface Based on Redox Potential of Cleaning Solution, ECS Transactions, 66(7), 11-21
  192. Flattening Technique of (551) Silicon Surface Using Xe/H2 Plasma, ECS Transactions, 61(2), 401-407
  193. Effect of Composition Ratio on Erbium Silicide Work Function on Different Morphology of Si(100) Surface Changed by Alkaline Etching, ECS Transactions, 61(3), 47-53
  194. High Selectivity in Dry Etching of Silicon Nitride over Si Using a Novel Hydrofluorocarbon Etch Gas in a Microwave Excited Plasma for FinFET, ECS Transactions, 61(3), 29-37
  195. High Performance Normally-off GaN MOSFETs on Si Substrates, ECS Transactions, 58(4), 155-166
  196. Schottky Barrier Height between Erbium Silicide and Various Morphology of Si(100) Surface Changed by Alkaline Etching, ECS Transactions, 58(7), 349-354
  197. Effect of Composition Rate on Erbium Silicide Work Function on Different Silicon Surface Orientation, ECS Transactions, 53(1), 343-350
  198. Low Work Function between Erbium Silicide and n-type Silicon Controlled by Cap Film Stress, ECS Transactions, 45(3), 371-378
  199. Electrical Properties of Silicon Nitride Using High Density and Low Plasma Damage PECVD Formed at 400 oC, ECS Transactions, 45(3), 421-428
  200. Influence of Forming Gas Annealing on SiO2/Si(100) Interface Structures Formed Utilizing Oxygen Molecules Different from that Utilizing Oxygen Radicals, ECS Transactions, 45(3), 453-460
  201. 1/f CHANNEL NOISE AT HIGH DRAIN CURRENT IN MOS TRANSISTORS, Fluctuation and Noise Letters, 10(4), 431-445
  202. High Power Normally-Off GaN MOSFET, ECS Transactions, 41(8), 87-100
  203. Gate SiO2 Film Integrity on Ultra-Pure Argon Anneal (100) Silicon Surface, ECS Transactions, 41(7), 147-156
  204. Different Properties of Erbium Silicides on Si(100) and Si(551) Orientation Surfaces, ECS Transactions, 41(7), 365-373
  205. Clear Difference between the Chemical Structure of SiO2/Si Interfaces Formed Using Oxygen Radicals versus Oxygen Molecules, ECS Transactions, 35(4), 115-122
  206. Pr3Si6N11/Si3N4 Stacked High-k Gate Dielectrics with High Quality Ultrathin Si3N4 Interfacial Layers, ECS Transactions, 35(2), 275-284
  207. Advanced Direct-Polish Process on Organic Non-Porous Ultra Low-k Fluorocarbon Dielectric on Cu Interconnects, ECS Transactions, 34(1), 653-658
  208. Evaluation of Narrow Gap Filling Ability in Shallow Trench Isolation by Organosiloxane Sol-Gel Precursor, ECS Transactions, 33(3), 135-143
  209. Impact of Work Function Optimized S/D Silicide Contact for High Current Drivability CMOS, ECS Transactions, 28(1), 315-324
  210. Atomically Flattening Technology at 850˚C for Si(100) Surface, ECS Transactions, 28(1), 299-309
  211. Quantitative Analysis of the Strain Field beneath the Si3N4/Si(001) Interface Formed by the Xe/NH3 Plasma Nitridation using a Multiple-Wave X-ray Diffraction Phenomenon, Transactions of the Materials Research Society of Japan, 34(4), 597-600
  212. Very High Performance CMOS on Si(551) Surface using Radical Oxidation Silicon Flattening Technology and Accumulation-mode SOI Device Structure, ECS Transactions, 25(7), 115-129
  213. Different Types of Degradation and Recovery Mechanisms on NBT Stress for Thin SiO2 Films by On-the-Fly Measurement, ECS Transactions, 19(2), 339-350
  214. Effect of Polisher Kinematics in Reducing Average and Variance of Shear Force and Increasing Removal Rate in Copper CMP, ECS Transactions, 18(1), 465-471
  215. Microcrystalline Si1-xGex Deposited by Magnetron Sputtering, ECS Transactions, 16(9), 183-192
  216. X-ray Photoelectron Spectroscopic Study of Nitrogen Depth Profile in Radical Nitrided Silicon Oxynitride Film, Journal of the Vacuum Society of Japan, 50(11), 672-677
  217. Formation of High Quality Silicon Nitride Films Using Microwave Excitation Plasma, Journal of the Vacuum Society of Japan, 50(11), 672-677
  218. Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node, ECS Transactions, 11(6), 349-354
  219. Dependence of Electron Channel Mobility on Si-SiO2 Interface Microroughness, IEEE Electron Device Letters, 12(12), 652-654

Publications such as books

  1. 2017/07/07, Different Types of Field-Effect Transistors - Theory and Applications, Carrier Mobility in Field-Effect Transistors, InTech, 2017, July, Scholarly Book, Joint work, en, P. Gaubert and A. Teramoto, Chapter 1
  2. 2016/10/05, Advances in Noise Analysis, Mitigation and Control, New Processes and Technologies to Reduce the Low‐Frequency Noise of Digital and Analog Circuits, InTech, 2016, October, Scholarly Book, en, P. Gaubert and A. Teramoto, Chapter 1
  3. 2007/07, Advanced Gate Stacks for High-Mobility Semiconductors, New Processes and Technologies to Reduce the Low‐Frequency Noise of Digital and Analog Circuits, New Processes and Technologies to Reduce the Low‐Frequency Noise of Digital and Analog Circuits, Springer, 2007, July, Scholarly Book, Joint work, en, A. Teramoto and T. Ohmi, 10-3-540-71490-1, 21-24頁
  4. 2006, Scientific Wet Process Technology for Innovative LSI/FPD Manufacturing, Taylor & Francis, 2006, Scholarly Book, Joint work, en, H. Morita, A. Teramoto, H. Morinaga, S. Ojima, K. Mitsumori, T. Yabune, M. Miyashita, H. Kikuyama, J. takano, 61-250

Invited Lecture, Oral Presentation, Poster Presentation

  1. Study on Influence of O2 Concentration in Wafer Cleaning Ambient for Smoothness of Silicon (110) Surface Appearing at Sidewall of Three-Dimensional Transistors, T. Suwa, A. Teramoto, Y. Shirai, T. Matsuo, N. Mizutani, and S. Sugawa, ECS Meeting, 2020/05/01, Without Invitation, English, The Electrochemical Society
  2. Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis of MOSFETs with Various Gate Shapes, R. Akimoto, R. Kuroda, A. Teramoto, T. Mawaki, S. Ichino, T. Suwa, and S. Sugawa, 2020 IEEE International Reliability Physics Symposium, 2020/04/28, Without Invitation, English, IEEE, Virtual
  3. High Reliability CoFeB/MgO/CoFeB Magnetic Tunnel Junction Fabrication Using Low-damage Ion Beam Etching, H. Park, A. Teramoto, J.-i. Tsuchimoto, K. Hashimoto, T. Suwa, M. Hayashi, R. Kuroda, and S. Sugawa, International Conference on Solid State Devices and Materials, 2019/09/06, Without Invitation, English, The Japan Society of Applied Physics, Nagoya
  4. An Accuracy Improved Resistance Measurement Platform For Evaluation of Emerging Memory Materials, T. Maeda, Y. Omura, R. Kuroda, A. Teramoto, T. Suwa, and S. Sugawa, International Conference on Solid State Devices and Materials, 2019/09/04, Without Invitation, English, The Japan Society of Applied Physics, Nagoya
  5. SiNx Deposition at Low Temperature Using UV-Irradiated NH3, Y. Shiba, A. Teramoto, T. Suwa, K. Ishii, A. Shimizu, K. Umezawa, R. Kuroda, and S. Sugawa, 235th ECS Meeting, 2019/05/26, Without Invitation, English, The Electrochemical Society, Dallas
  6. Resistance Measurement Platform for Statistical Analysis of Next Generation Memory Materials, T. Maeda, Y. Omura, A. Teramoto, R. Kuroda, T. Suwa, and S. Sugawa, IEEE International Conference on Microelectronic Test Structures, 2019/03/18, Without Invitation, English, IEEE, Kitakyushu
  7. Impact of Y-O-F Composition in Yttrium Oxyfluoride on Corrosion Resistance to Plasma Irradiation, A. Teramoto, Y. Shiba, T. Goto, Y. Kishi, and S. Sugawa, 5th Annual World Congress of Smart Materials, 2019/03/06, With Invitation, English, BIT, Rome
  8. An Electrical Impedance Biosensor Array for Tracking Moving Cells, N. Ogata, A. Shina, T. Komiya, Y. Iizuka, K. Matsuse, F. Imaizumi, T. Suwa, and A. Teramoto, IEEE SENSORS, 2018/10/28, Without Invitation, English, IEEE, New Delhi
  9. Corrosion Resistance to F and Cl plasma of Yttrium Oxyfluoride (YOF) formed by Sintering, A. Teramoto, Y. Shiba, T. Goto, Y. Kishi, and S. Sugawa, AVS 65th International Symposium, 2018/10/21, Without Invitation, English, American Vacuum Society, Long Beach
  10. Effects of Process Gases and Gate TiN Electrode during the Post Deposition Anneal to ALD-Al2O3 Dielectric Film, M. Saito, A. Teramoto, T. Suwa, K. Nagumo, Y. Shiba, R. Kuroda, and S. Sugawa, VS 65th International Symposium, 2018/10/21, Without Invitation, English, AVS, Long Beach
  11. Impact of CoFeB Surface Roughness on Reliability of MgO Films in CoFeB/MgO/CoFeB Magnetic Tunnel Junction, H. W. Park, A. Teramoto, J. Tsuchimoto, M. Hayashi, K. Hashimoto, and S. Sugawa, 4th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures & 26th International Colloquium on Scanning Probe Microscopy, 2018/10/21, Without Invitation, English, The Japan Society of Applied Physics, Sendai
  12. Statistical Analysis of Electric Characteristics Variability Using MOSFETs with Asymmetric Source and Drain, Shinya Ichino, Akinobu Teramoto, Rihito Kuroda, Takezo Mawaki, Tomoyuki Suwa, Shigetoshi Sugawa, IEICE Technical Committee on Silicon Device and Materials, 2018/10/17, Without Invitation, Japanese, Sendai
  13. Impacts of Boron Concentration and Annealing Temperature on Electrical Characteristics of CoFeB/MgO/CoFeB Magnetic Tunnel Junction, H. Park, A. Teramoto, J.-i. Tsuchimoto, M. Hayashi, K. Hashimoto, R. Kuroda, and S. Sugawa, International Conference on Solid State Devices and Materials, 2018/09/09, Without Invitation, English, The Japan Society of Applied Physics, Tokyo
  14. Improved Conductance Method for Interface Trap Density of ZrO2-Si interface, H. J. Lin, A. Teramoto, H. Watanabe, R. Kurota, K. Umezawa, K. Furukawa, and S. Sugawa, International Conference on Solid State Devices and Materials, 2018/09/09, Without Invitation, English, The Japan Society of Applied Physics, Tokyo
  15. Impact of atomically flat SiO2/Si interface on improvement of MOS device performance, A. Teramoto, T. Suwa, R. Kuroda, and S. Sugawa, European Advanced Materials Congress, 2018/08/21, With Invitation, English, European Advanced Materials Congress, Stockholm
  16. Reliability of MgO in Magnetic Tunnel Junctions Formed by MgO Sputtering and Mg Oxidation, A. Teramoto, K. Hashimoto, T. Suwa, J.-i. Tsuchimoto, M. Hayashi, H. Park, and S. Sugawa, IEEE International Reliability Physics Symposium, 2018/03/11, Without Invitation, English, IEEE, Burlingame
  17. Corrosion Resistance of Yttrium Trifluoride (YF3) and Yttrium Oxyfluoride (YOF) used in Plasma Process Chamber, Y. Shiba, A. Teramoto, T. Goto, and Y. Kishi, AVS 64th International Symposium, 2017/10/29, Without Invitation, English, AVS, Tampa
  18. Difference of the Hysteresis in Capacitance-voltage Characteristics of ALD-Al2O3 MIS Capacitors on Si and GaN Substrate, M. Saito, T. Suwa, A. Teramoto, T. Narita, and T. Kachi, AVS 64th International Symposium, 2017/10/29, Without Invitation, English, AVS, Tampa
  19. Analysis of Random Telegraph Noise Behaviors toward Changes of Source Follower Transistor Operation Conditions using High Accuracy Array Test Circuit, Shinya Ichino, Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shunichi Wakashima, Shigetoshi Sugawa , IEICE Technical Committee on Silicon Device and Materials, 2017/10/26, Without Invitation, Japanese, Institute of Electronics, Information, and Communication Engineering, Sendai
  20. Experimental Investigation of Localized Stress Induced Leakage Current Distribution and its Decrease by Atomically Flattening Process, Hyeonwoo Park, Rihito Kuroda, Tetsuya Goto, Tomoyuki Suwa, Akinobu Teramoto,Daiki Kimoto, Shigetoshi Sugawa, IEICE Technical Committee on Silicon Device and Materials, 2017/10/25, Without Invitation, Japanese, IEICE, Sendai
  21. Statistical analysis of random telegraph noise in pixel source follower -- Impacts of transistor shape, time constants and number of states --, Rihito Kuroda, Akinobu Teramoto, Shinya Ichino, Takezo Mawaki, Shunichi Wakashima, Shigetoshi Sugawa, The Institute of Image Information and Television Engineers, 2017/09/25, Without Invitation, Japanese, The Institute of Image Information and Television Engineers, Tokyo
  22. Monte-Carlo Simulation of Biomolecules' Fluid-Dynamics in Electrolyte Facing Nanowires Biosensor, C.-A. Lee, A. Teramoto, and H. Watanabe, 17th IEEE International Conference on Nanotechnology, 2017/07/25, Without Invitation, English, IEEE, Pittsburgh
  23. Atomically flat interface for noise reduction in SOIMOSFETs, P. Gaubert, A. Kircher, H. Park, R. Kuroda, S. Sugawa, T. Goto, T. Suwa, and A. Teramoto, 24th International Conference on Noise and Fluctuations, 2017/06/20, Without Invitation, English, IEEE, Vilnius
  24. Improvement in Electrical Characteristics of ALD Al2O3 Film by Microwave Excited Ar/O2 Plasma Treatment, M. Saito, T. Suwa, A. Teramoto, Y. Koda, R. Kuroda, Y. Shiba, S. Sugawa, J. Tsuchimoto, and M. Hayashi., 231st ECS Meeting, 2017/04/15, Without Invitation, English, The Electrochemical Society, New Orleans
  25. Impact of SiO2/Si interface micro-roughness on SILC distribution and dielectric breakdown: A comparative study with atomically flattened devices, H. Park, T. Goto, R. Kuroda, A. Teramoto, T. Suwa, D. Kimoto, and S. Sugawa, IEEE International Reliability Physics Symposium, 2017/04/02, Without Invitation, English, IEEE, Monterey
  26. High Quality Film and Interface Formation using Appropriate Reaction Species, Akinobu Teramoto, AVS 63rd International Symposium, 2016/11/09, With Invitation, Japanese, AVS, Nashville
  27. Behavior of Random Telegraph Noise toward Bias Voltage Changing, Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shinya Ichino, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa, IEICE Technical Committee on Silicon Device and Materials, 2016/10/27, Without Invitation, Japanese, IEICE, Sendai
  28. Formation technology of Flat Surface after Selective Epitaxial Growth on Ion-Implanted (100) Oriented Thin SOI Wafers, Kiichi Furukawa, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Keiichi Hashimoto, Shigetoshi Sugawa, Daisuke Suzuki, Yoichiro Chiba, Katsutoshi Ishii, Akira Shimizu, Kazuhide Hasebe, IEICE Technical Committee on Silicon Device and Materials, 2016/10/26, Without Invitation, Japanese, IEICE, Sendai
  29. Effects of the oxidizing species on the interface of Al2O3 film by atomic layer deposition, Masaya Saito, Tomoyuki Suwa, Akinobu Teramoto, Rihito Kuroda, Yasumasa Koda, Hisaya Sugita, Hidekazu Ishii, Yoshinobu Shiba, Yasuyuki Shirai, Shigetoshi Sugawa, Marie Hayashi, Junichi Tsuchimoto, IEICE Technical Committee on Silicon Device and Materials, 2016/10/26, Without Invitation, Japanese, IEICE, Sendai
  30. Low Frequency Noise of Accumulation-Mode n- and p-MOSFETs fabricated on (110) Crystallographic Silicon-Oriented Wafers, P. Gaubert, A. Teramoto, and S. Sugawa, International Conference on Solid State Devices and Materials, 2016/09/26, Without Invitation, English, The Japan Society of Applied Physics, Tsukuba
  31. Formation Technology of Flat Surface after Selective-Epitaxial-Growth on Ion-implanted (100) Oriented Thin SOI Wafers, K. Furukawa, A. Teramoto, R. Kuroda, T. Suwa, K. Hashimoto, S. Sugawa, D. Suzuki, Y. Chiba, K. Ishii, A. Shimizu, and K. Hasebe, International Conference on Solid State Devices and Materials, 2016/09/26, Without Invitation, English, The Japan Soceity of Applied Physics, Tsukuba
  32. Oxidizing Species Dependence of the Interface Reaction during Atomic-Layer-Deposition Process and Post-Deposition-Anneal, T. Suwa, A. Teramoto, Y. Koda, M. Saito, H. Sugita, M. Hayashi, J. Tsuchimoto, H. Ishii, Y. Shiba, Y. Shirai, and S. Sugawa, PRiME Meeting, 2016/09/01, Without Invitation, English, The Electrochemical Society The Electrochemical Society of Japan The Korean Electrochemical Society, Honolulu
  33. Introduction of a High Selectivity Etching Process with Advanced SiNx Etch Gas in the Fabrication of FinFET Structures, T. Kojiri, T. Suwa, K. Hashimoto, A. Teramoto, R. Kuroda, and S. Sugawa, 229th ECS Meeting, 2016/05/31, Without Invitation, English, The Electrochemical Society, San Diego
  34. Low Leakage Current Al2O3 Metal-Insulator-Metal Capacitors Formed By Atomic Layer Deposition at Optimized Process Temperature and O2 Post Deposition Annealing, Y. Koda, H. Sugita, T. Suwa, R. Kuroda, T. Goto, A. Teramoto, and S. Sugawa, 229th ECS Meeting, 2016/05/31, Without Invitation, English, The Electrochemical Society, San Diego
  35. Random Telegraph Noise Measurement and Analysis based on Arrayed Test Circuit toward High S/N CMOS Image Sensors, R. Kuroda, A. Teramoto, and S. Sugawa, IEEE International Conference on Microelectronic Test Structures, 2016/05/28, With Invitation, English, IEEE, Yokohama
  36. Study of process temperature of Al2O3 atomic layer deposition using high accuracy process gasses supply controller, Hisaya Sugita, Yasumasa Koda, Tomoyuki Suwa, Rihito Kuroda, Tetsuya Goto, Hidekazu Ishii, Satoru Yamashita, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi , IEICE Technical Committee on Silicon Device and Materials, 2015/10/30, Without Invitation, Japanese, IEICE, Sendai
  37. A Device Simulation Study on Tunneling and Diffusion Current Hybrid MOSFET, Kiichi Furukawa, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Keiichi Hashimoto, Takashi Kojiri, Shigetoshi Sugawa , IEICE Technical Committee on Silicon Device and Materials, 2015/10/30, Without Invitation, Japanese, IEICE, Sendai
  38. Electrical Properties of MOSFETs Introducing Atomically Flat Gate Insulator/Silicon Interface , Tetsuya Goto, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Yutaka Kamata, Yuki Kumagai, Katsuhiko Shibusawa, IEICE Technical Committee on Silicon Device and Materials, 2015/10/29, Without Invitation, Japanese, IEICE, Sendai
  39. Ultra-Low Temperature Flattening Technique of Silicon Surface Using Xe/H2 Plasma, Tomoyuki Suwa, Akinobu Teramoto, Tetsuya Goto, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi, IEICE Technical Committee on Silicon Device and Materials, 2015/10/29, Without Invitation, Japanese, IEICE, Sendai
  40. Ferroelectric BiFeO3 Formation with Oxigen Radical Treatment, uminobu Imaizumi, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa, IEICE Technical Committee on Silicon Device and Materials, 2015/10/29, Without Invitation, Japanese, IEICE, Sendai
  41. Effect of Oxygen Impurity on Nitrogen Radicals in Post-Discharge Flows, Y. Shiba, A. Teramoto, T. Suwa, K. Watanabe, S. Nishimura, Y. Shirai, and S. Sugawa, 228th ECS Meeting, 2015/10/11, Without Invitation, English, The Electrochemical Society, Phoenix
  42. 1/f Noise Performances and Noise Sources of Accumulation Mode Si(100) n-MOSFETs, P. Gaubert, A. Teramoto, and S. Sugawa, International Conference on Solid State Devices and Materials, 2015/09/29, Without Invitation, English, The Japan Society of Applied Physics, Sapporo
  43. Proposal of Tunneling and Diffusion Current Hybrid MOSFET, K. Furukawa, R. Kuroda, T. Suwa, K. Hashimoto, A. Teramoto, and S. Sugawa, International Conference on Solid State Devices and Materials, 2015/09/29, Without Invitation, English, The Japan Society of Applied Physics, Sapporo
  44. Drastic suppression of the 1/f noise in MOSFETs: Fundamental fluctuations of mobility rather than induced mobility fluctuations, P. Gaubert, A. Teramoto, S. Sugawa, International Conference on Noise and Fluctuations, 2015/06/02, With Invitation, English, IEEE, Xian
  45. Effect of Hydrogen on Silicon Nitrides Formation by Microwave Excited Plasma Enhanced Chemical Vapor Deposition, A. Teramoto, Y. Nakao, T. Suwa, K. Hashimoto, T. Motoya, M. Hirayama, S. Sugawa, and T. Ohmi, 227th ECS Meeting, 2015/05/24, Without Invitation, English, The Electrochemical Society, Chicago
  46. Ultra-Low Temperature Flattening Technique of Silicon Surface Using Xe/H2 Plasma, T. Suwa, A. Teramoto, T. Goto, M. Hirayama, S. Sugawa, and T. Ohmi, 227th ECS Meeting, 2015/05/24, Without Invitation, English, The Electrochemical Society, Chicago
  47. Effect of Process Temperature of Al2O3 Atomic Layer Deposition Using Accurate Process Gasses Supply System, H. Sugita, Y. Koda, T. Suwa, R. Kuroda, T. Goto, H. Ishii, S. Yamashita, A. Teramoto, S. Sugawa, and T. Ohmi, 227th ECS Meeting, 2015/05/24, Without Invitation, English, The Electrochemical Society, Chicago
  48. Surface Metal Cleaning of GaN Surface Based on Redox Potential of Cleaning Solution, K. Nagao, K. Nakamura, A. Teramoto, Y. Shirai, F. Imaizumi, T. Suwa, S. Sugawa, and T. Ohmi, 227th ECS Meeting, 2015/05/24, Without Invitation, English, The Electrochemical Society, Chicago
  49. Crystallinity Improvement of Ferroelectric BiFeO3 Thin Film by Oxygen Radical Treatment, F. Imaizumi, T. Goto, A. Teramoto, S. Sugawa, and T. Ohmi, 227th ECS Meeting, 2015/05/24, Without Invitation, English, The Electrochemical Society, Chicago
  50. Low Temperature Atomically Flattening of Si Surface of Shallow Trench Isolation Pattern, T. Goto, R. Kuroda, T. Suwa, A. Teramoto, N. Akagawa, D. Kimoto, S. Sugawa, T. Ohmi, Y. Kamata, Y. Kumagai, and K. Shibusawa, 227th ECS Meeting, 2015/05/24, Without Invitation, English, The Electrochemical Society, Chicago
  51. Effect of random telegraph noise reduction by atomically flat gate insulator film/Si interface, Rihito Kuroda, Toshiki Obara, Tetsuya Goto, Naoya Akagawa, Daiki Kimoto, Akinobu Teramoto, Shigetoshi Sugawa, The Institute of Image Information and Television Engineers, 2015/05/08, Without Invitation, Japanese, The Institute of Image Information and Television Engineers, Tokyo
  52. Analysis of trap density causing random telegraph noise in MOSFETs, Toshiki Obara, Akinobu Teramoto, Rihito Kuroda, Akihiro Yonezawa, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi , IEICE Technical Committee on Silicon Device and Materials, 2014/10/17, Without Invitation, Japanese, IEICE, Sendai
  53. Study on compositional transition layers at Si3N4/Si interface formed by radical nitridation, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi, IEICE Technical Committee on Silicon Device and Materials, 2014/10/17, Without Invitation, Japanese, IEICE, Sendai
  54. Introduction of Atomically Flattening of Silicon Surface in Shallow Trench Isolation Process Technology, Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi, Yuki Kumagai, Yutaka Kamata, Katsuhiko Shibusawa, IEICE Technical Committee on Silicon Device and Materials, 2014/10/16, Without Invitation, Japanese, IEICE, Sendai
  55. Atomically Flattening of Si Surface of SOI and Isolation-patterned Wafers, T. Goto, R. Kuroda, N. Akagawa, T. Suwa, A. Teramoto, X. Li, S. Sugawa, T. Ohmi, Y. Kumagai, Y. Kamata, and K. Sibusawa, International Conference on Solid State Devices and Materials, 2014/09/08, Without Invitation, Japanese, The Japan Society of Applied Physics, Tsukuba
  56. Demonstrating Individual Leakage Path from Random Telegraph Signal of Stress Induced Leakage Current, A. Teramoto, T. Inatsuka, T. Obara, N. Akagawa, R. Kuroda, S. Sugawa, and T. Ohmi, IEEE International Reliability Physics Symposium, 2014/06/01, Without Invitation, English, IEEE, Waikoloa
  57. Analyzing Correlation between Multiple Traps in RTN Characteristics, T. Obara, A. Teramoto, A. Yonezawa, R. Kuroda, S. Sugawa, and T. Ohmi, IEEE International Reliability Physics Symposium, 2014/06/01, Without Invitation, English, IEEE, Waikoloa
  58. A Novel Analysis of Oxide Breakdown based on Dynamic Observation using Ultra-High Speed Video Capturing Up to 10,000,000 Frames Per Second, R. Kuroda, F. Shao, D. Kimoto, K. Furukawa, H. Sugo, T. Takeda, K. Miyauchi, Y. Tochigi, A. Teramoto, and S. Sugawa, IEEE International Reliability Physics Symposium, 2014/06/01, Without Invitation, English, IEEE, Waikoloa
  59. Effect of Composition Ratio on Erbium Silicide Work Function on Different Morphology of Si(100) Surface Changed by Alkaline Etching, H. Tanaka, T. Suwa, A. Teramoto, T. Motoya, S. Sugawa, and T. Ohmi, 225th ECS Meeting, 2014/04/01, Without Invitation, English, The Electrochemical Society, Orland
  60. Flattening Technique of (551) Silicon Surface Using Xe/H2 Plasma, T. Suwa, A. Teramoto, S. Sugawa, and T. Ohmi, 225th ECS Meeting, 2014/04/01, Without Invitation, English, The Electrochemical Society, Orland
  61. High Selectivity in Dry Etching of Silicon Nitride over Si Using a Novel Hydrofluorocarbon Etch Gas in a Microwave Excited Plasma for FinFET, Y. Nakao, T. Matsuo, A. Teramoto, H. Utsumi, K. Hashimoto, R. Kuroda, Y. Shirai, S. Sugawa, and T. Ohmi, 225th ECS Meeting, 2014/04/01, Without Invitation, English, The Electrochemical Society, Orland
  62. A statistical evaluation of effective time constants of random telegraph noise with various operation timings of in-pixel source follower transistors, A. Yonezawa, R. Kuroda, A. Teramoto, T. Obara, and S. Sugawa, SPIE-IS&T Electronic Imaging,, 2014/02/02, Without Invitation, English, The international society for optics and photonics, San Francisco
  63. Schottky Barrier Height Between Erbium Silicide and Various Morphology of Si(100) Surface Changed By Alkaline Etching, H. Tanaka, A. Teramoto, S. Sugawa, and T. Ohmi, 224th ECS Meeting, 2013/10/27, Without Invitation, English, The Electrochemical Society, San Francisco
  64. High Performance Normally-Off GaN Mosfets On Si Substrates, H. Kambayshi, N. Ikeda, T. Nomura, H. Ueda, Y. Nirozumi, K. Harada, K. Hasebe, A. Teramoto, S. Sugawa, and T. Ohmi, 224th ECS Meeting, 2013/10/27, Without Invitation, English, The Electrochemical Society, San Francisco
  65. Study of Time Constant Analysis in Random Telegraph Noise at the Subthreshold Voltage Region, Akihiro Yonezawa, Akinobu Teramoto, Toshiki Obara, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi , IEICE Technical Committee on Silicon Device and Materials, 2013/10/18, Without Invitation, Japanese, IEICE, Sendai
  66. A device structure design of multi-gate MOSFETs based on carrier mobility characteristics of atomically flattened Si surface, Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi , IEICE Technical Committee on Silicon Device and Materials, 2013/10/17, Without Invitation, Japanese, IEICE, Sendai
  67. Wet cleaning process for GaN surface at room temperature, Y. Tsuji, T. Katsuyama, A. Teramoto, Y. Shirai, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2013/09/24, Without Invitation, English, The Japan Society of Apllied Physics, Fukuoka
  68. Detection of oxidation-induced compressive stress in Si(100) substrate near the SiO2/Si interface with atomic-scale resolution, T. Suwa, K. Nagata, H. Nohira, K. Nakajima, A. Teramoto, A. Ogura, K. Kimura, T. Muro, T. Kinoshita, S. Sugawa, T. Hattori, and T. Ohmi, International Conference on Solid State Devices and Materials, 2013/09/24, Without Invitation, English, The Japan Society of Applied Physics, Fukuoka
  69. Extraction of Time Constants Ratio over Nine Orders of Magnitude for Understanding Random Telegraph Noise in MOSFETs, T. Obara, A. Yonezawa, A. Teramoto, R. Kuroda, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2013/09/24, Without Invitation, English, The Japan Society of Applied Physics, Fukuoka
  70. Carrier Mobility on (100), (110), and (551) Oriented Atomically Flattened Si Surfaces for Multi-gate MOSFETs Device Design, R. Kuroda, Y. Nakao, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2013/09/24, Without Invitation, English, The Japan Society of Applied Physics, Fukuoka
  71. Impact of Injected Carrier Types to Stress Induced Leakage Current Using Substrate Hot Carrier Injection Stress, H. W. Park, A. Teramoto, T. Inatsuka, R. Kuroda, S. Sugawa, and T. Ohmi, Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 2013/06/26, Without Invitation, English, The Institute of Electronics, Information and Communication Engineers The Institute of Electronics and Information Engineers of Korea, Seoul
  72. Stress induced leakage current generated by hot-hole injection, A. Teramoto, H. W. Park, T. Inatsuka, R. Kuroda, S. Sugawa, and T. Ohmi, CEZAMAT, 18th Conference of "Insulating Films on Semiconductors", 2013/06/25, Without Invitation, English, Cracow
  73. Angle-Resolved Photoelectron Spectroscopy Study on Interfacial Transition Layer and Oxidation-Induced Residual Stress in Si(100) Substarte Near the Interface, T. Suwa, A. Teramoto, K. Nagata, A. Ogura, T. Muro, T. Kinoshita, T. Ohmi, and T. Hattori, CEZAMAT, 18th Conference of "Insulating Films on Semiconductors", 2013/06/25, Without Invitation, English, Cracow
  74. 1/f noise of accumulation mode p- and n-MOSFETs, P. Gaubert, A. Teramoto, S. Sugawa, and T. Ohmi, 22nd International Conference on Noise and Fluctuations, 2013/06/24, Without Invitation, English, IEEE, Montpellier
  75. High-Speed and Highly Accurate Evaluation of Electrical Characteristics in MOSFETs, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on IC Design and Technology, 2013/05/29, With Invitation, English, IEEE, Pavia
  76. XPS analysis of the terminated-bonding states at GaN surface after chemical and plasma treatments, Y. Tsuji, T. Watanabe, K. Nakamura, I. Makabe, K. Nakata, T. Katsuyama, A. Teramoto, Y. Shirai, S. Sugawa, and T. Ohmi, The 40th International Symposium on Compound Semiconductors, 2013/05/19, Without Invitation, English, Kobe
  77. Effect of Composition Rate on Erbium Silicide Work Function on Different Silicon Surface Orientation, H. Tanaka, A. Teramoto, T. Motoya, S. Sugawa, and T. Ohmi, 223rd ECS Meeting, 2013/05/15, Without Invitation, English, The Electrochemical Society, Toronto
  78. The study of time constant analysis in random telegraph noise at the sub-threshold voltage region, A. Yonezawa, A. Teramoto, T. Obara, R. Kuroda, S. Sugawa, and T. Ohmi, IEEE International Reliability Physics Symposium, 2013/04/14, Without Invitation, English, IEEE, Monterey
  79. Demonstrating Distribution of SILC Values at Individual Leakage Spots , T. Inatsuka, R. Kuroda, A. Teramoto, Y. Kumagai, S. Sugawa, and T. Ohmi, IEEE International Reliability Physics Symposium, 2013/04/14, Without Invitation, English, IEEE, Monterey
  80. High Integrity SiO2/Al2O3 Gate Stack for Normally-off GaN MOSFET, H. Kambayashi, T. Nomura, H. Ueda, K. Harada, Y. Morozumi, K. Hasebe, A. Teramoto, S. Sugawa, and T. Ohmi, MRS Spring Meeting, 2013/04/01, Without Invitation, English, Material research society, San Francisco
  81. Detection of crystalline like structures in SiO2 thin films formed using oxygen molecules/radicals, K. Nagata, T. Yamaguchi, A. Ogura, T. Koganezawa, I. Hirosawa, T. Suwa, A. Teramoto, T. Hattori, and T. Ohmi, The 6th International Symposium on Advanced Science and Technology of Silicon Materials, 2012/11/19, Without Invitation, Japanese, Japan Society for the Promotion of Science, Kona
  82. Accumulation-mode SOI CMOS Performance on Very Flat Si(551) Syrface, Akinobu Teramoto, BIT's 2nd Annual World Congress of Nanosciene and Nanotechnology, 2012/10/28, With Invitation, English, BIT, Qindao
  83. Low Temperature PECVD of High Quality Silicon Nitride for Gate Spacer, Yukihisa Nakao, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Hiroaki Tanaka, Shigetoshi Sugawa, Tadahiro Ohmi , IEICE Technical Committee on Silicon Device and Materials, 2012/10/26, Without Invitation, Japanese, IEICE, Sendai
  84. Noise Performance of Accumulation MOSFETs, P. Gaubert, A. Teramoto, S. Sugawa, and T. Ohmi, IEICE Technical Committee on Silicon Device and Materials, 2012/10/26, Without Invitation, Japanese, IEICE, Sendai
  85. Evaluation of crystalline phase in SiO2 thin film using grazing incidence X-ray diffraction, Kohki Nagata, Takuya Yamaguchi, Atsushi Ogura, Tomoyuki Koganezawa, Ichiro Hirosawa, Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi , IEICE Technical Committee on Silicon Device and Materials, 2012/10/25, Without Invitation, Japanese, IEICE, Sendai
  86. Chemical structures of compositional transition layer at SiO2/Si(100) interface, Tomoyuki Suwa, Akinobu Teramoto, Takayuki Muro, Toyohiko Kinoshita, Shigetoshi Sugawa, Takeo Hattori, Tadahiro Ohmi, IEICE Technical Committee on Silicon Device and Materials, 2012/10/25, Without Invitation, Japanese, IEICE, Sendai
  87. Effect of Erbium Silicide Crystallinity for Low Barrier Contact Between Erbium Silicide and n-type Silicon, H. Tanaka, A. Teramoto, S. Sugawa, and T. Ohmi, 222nd ECS Meeting, 2012/10/10, Without Invitation, English, The Electrochemical Society, Honolulu
  88. Comprehensive Study on Chemical Structures of Compositional Transition Layer at SiO2/Si(100) Interface, T. Suwa, A. Teramoto, T. Muro, T. Kinoshita, S. Sugawa, T. Hattori, and T. Ohmi, 222nd ECS Meeting, 2012/10/09, Without Invitation, English, The Electrochemical Society, Honolulu
  89. Dependence of chemical structures of transition layer at SiO2/Si(100) interface on oxidation temperature, annealing in forming gas, and oxidizing species, T. Suwa, A. Teramoto, T. Muro, T. Kinoshita, S. Sugawa, T. Hattori, and T. Ohmi, International Conference on Solid State Devices and Materials, 2012/09/25, Without Invitation, English, The Japan Society of Applied Physics, Kyoto
  90. High Quality SiO2/Al2O3 Gate Stack for GaN MOSFET, H. Kambayashi, T. Nomura, H. Ueda, K. Harada, Y. Morozumi, K. Hasebe, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2012/09/25, Without Invitation, English, The Japan Society of Applied Physics, Kyoto
  91. Low frequency noise assessment of accumulation Si p-MOSFETs, P. Gaubert, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2012/09/25, Without Invitation, English, The Japan Society of Applied Physics, Kyoto
  92. The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers, P. Gaubert, A. Teramoto, S. Sugawa, and T. Ohmi, The European Solid-State Device Research Conference, 2012/09/17, Without Invitation, English, CEZAMAT, Bordeaux
  93. 100nm-gate-length Normally-off Accumulation-Mode FD-SOI MOSFETs for Low Noise Analog/RF Circuits, H. Utsumi, R. Kasahara, Y. Nakao, R. Kuroda, A. Teramoto, S. Sugawa, and T. Ohmi, Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 2012/06/27, Without Invitation, English, The Institute of Electronics, Information and Communication Engineers The Institute of Electronics and Information Engineers of Korea, Naha
  94. A Novel Chemically, Thermally and Electrically Robust Cu Interconnect Structure with an Organic Non-porous Ultralow-k Dielectric Fluorocarbon (k=2.2), X. Gu, A. Teramoto, R. Kuroda, Y. Tomita, T. Nemoto, S. Kuroki, S. Sugawa, and T. Ohmi, Symposium on VLSI Technology, 2012/06/13, Without Invitation, English, IEEE The Japan Society of Applied Physics, Honolulu
  95. Low Work Function between Erbium Silicide and n-type Silicon Control by Cap Film Stress, H. Tanaka, A. Teramoto, S. Sugawa, and T. Ohmi, 221st ECS Meeting, 2012/05/06, Without Invitation, English, The Electrochemical Society, Seattle
  96. Changes in SiO2/Si(100) Interface Structure Induced by Forming Gas Annealing, T. Suwa, Y. Kumagai, A. Teramoto, T. Muro, T. Kinoshita, S. Sugawa, T. Hattori, and T. Ohmi, 221st ECS Meeting, 2012/05/06, Without Invitation, English, The Electrochemical Society, Seattle
  97. Electrical Properties of Silicon Nitride Using High Density and Low Plasma Damage PECVD Formed at 400[ordinal indicator, masculine]C, Y. Nakao, R. Kuroda, H. Tanaka, A. Teramoto, S. Sugawa, and T. Ohmi, 221st ECS Meeting, 2012/05/06, Without Invitation, English, The Electrochemical Society, Seattle
  98. Statistical analysis of Random Telegraph Noise reduction effect by separating channel from the interface, A. Yonezawa, A. Teramoto, R. Kuroda, H. Suzuki, S. Sugawa, and T. Ohmi, IEEE International Reliability Physics Symposium, 2012/04/15, Without Invitation, English, IEEE, Anaheim
  99. A test circuit for extremely low gate leakage current measurement of 10 aA for 80,000 MOSFETs in 80 s, Y. Kumagai, T. Inatsuka, R. Kuroda, A. Teramoto, T. Suwa, S. Sugawa, and T. Ohmi, IEEE International Conference on Microelectronic Test Structures, 2012/03/19, Without Invitation, English, IEEE, Anaheim
  100. A statistical evaluation of low frequency noise of in-pixel source follower-equivalent transistors with various channel types and body bias, R. Kuroda, A. Yonezawa, A. Teramoto, T. L. Li, Y. Tochigi, and S. Sugawa, SPIE, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIV, 2012/02/19, Without Invitation, English, The international society for optics and photonics, Burlingame
  101. Development of Direct-polish Process of CMP and Post-CMP Clean for Next Generation Advanced Cu Interconnects, X. Gu, Y. Tomita, T. Nemoto, A. Teramoto, R. D. Mateo, T. Sakai, R. Kuroda, S. Sugawa, and T. Ohmi, International Conference on Planarization/CMP Technology, 2011/11/09, Without Invitation, English, CMPUGM JJCNS, Seoul
  102. Clear Difference between the Chemical Structure of SiO2/Si Interfaces Formed Using Oxygen Radicals and Oxygen Molecules, Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Toyohiko Kinoshita, Takayuki Muro, Takeo Hattori, Tadahiro Ohmi , IEICE Technical Committee on Silicon Device and Materials, 2011/10/21, Without Invitation, Japanese, IEICE, Sendai
  103. On the relation between interface flattening effect and insulator breakdown characteristic of radical reaction based insulator formation technology, Rihito Kuroda, Akinobu Teramoto, Xiang Li, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi, IEICE Technical Committee on Silicon Device and Materials, 2011/10/20, Without Invitation, Japanese, IEICE, Sendai
  104. Statistical Evaluations of Generation and Recovery Characteristics of Anomalous Stress Induced Leakage Current, Takuya Inatsuka, Yuki Kumagai, Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi , IEICE Technical Committee on Silicon Device and Materials, 2011/10/20, Without Invitation, Japanese, IEICE, Sendai
  105. Reduction of Random Telegraph Noise with Broad Channel MOSFET, Hiroyoshi Suzuki, Rihito Kuroda, Akinobu Teramoto, Akihiro Yonezawa, Hiroaki Matsuoka, Taiki Nakazawa, Kenichi Abe, Shigetoshi Sugawa, Tadahiro Ohmi, IEICE Technical Committee on Silicon Device and Materials, 2011/10/20, Without Invitation, Japanese, IEICE, Sendai
  106. Gate SiO2 Film Integrity on Ultra-Pure Argon Anneal (100) Silicon Surface, A. Teramoto, X. Li, R. Kuroda, T. Suwa, S. Sugawa, and T. Ohmi, 220th ECS Meeting, 2011/10/09, Without Invitation, English, The Electrochemical Society, Boston
  107. Different Properties of Erbium Silicides on Si(100) and Si(551) Orientation Surfaces, H. Tanaka, A. Teramoto, R. Kuroda, Y. Nakao, T. Suwa, S. Sugawa, and T. Ohmi, 220th ECS Meeting, 2011/10/09, Without Invitation, English, The Electrochemical Society, Boston
  108. High Power Normally-Off GaN MOSFET on Si Substrate, H. Kambayashi, Y. Satoh, T. Kokawa, N. Ikeda, T. Nomura, S. Kato, A. Teramoto, S. Sugawa, and T. Ohmi, 220th ECS Meeting, 2011/10/09, With Invitation, English, The Electrochemical Society, Boston
  109. Impact of Random Telegraph Noise Reduction with Buried Channel MOSFET, H. Suzuki, R. Kuroda, A. Teramoto, A. Yonezawa, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2011/09/28, Without Invitation, English, The Japan Society of Applied Physics, Nagoya
  110. Clear Difference between Chemical Structure of SiO2/Si Interface Formed Using Oxygen Radicals and That Formed Using Oxygen Molecules, T. Suwa, Y. Kumagai, A. Teramoto, T. Muro, T. Kinoshita, S. Sugawa, T. Hattori, and T. Ohmi, International Conference on Solid State Devices and Materials, 2011/09/28, Without Invitation, English, The Japan Society of Applied Physics, Nagoya
  111. High Quality and Low Thermal Budget Silicon Nitride Deposition Using PECVD for Gate Spacer, Silicide Block and Contact Etch Stopper, Y. Nakao, R. Kuroda, H. Tanaka, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2011/09/28, Without Invitation, English, The Japan Society of Applied Physics, Nagoya
  112. On the Si Surface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Ins u lator Formation Technology, R. Kuroda, A. Teramoto, X. Li, T. Suwa, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2011/09/28, Without Invitation, English, The Japan Society of Applied Physics, Nagoya
  113. High Integrity SiO2 Gate Insulator Formed by Microwave-Excited PECVD for AlGaN/GaN Hybrid MOS-HFET on Si Substrate, H. Kambayashi, T. Nomura, S. Kato, H. Ueda, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2011/09/28, Without Invitation, English, The Japan Society of Applied Physics, Nagoya
  114. Recovery Characteristic of Anomalous Stress Induced Leakage Current of 5.6nm Oxide Films, T. Inatsuka, Y. Kumagai, R. Kuroda, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2011/09/28, Without Invitation, English, 応用物理学会, 名古屋
  115. Evidence of the universality of the hole mobility in accumulation MOS transistors, P. Gaubert, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2011/09/28, Without Invitation, English, The Japan Society of Applied Physics, Nagoya
  116. Process Optimization for Improved Compatibility with Organic Non-porous Low-k Dielectric Fluorocarbon on advanced Cu Interconnects, X. Gu, Y. Tomita, T. Nemoto, K. Miyatani, A. Saito, Y. Kobayashi, A. Teramoto, R. Kuroda, S.-I. Kuroki, T. Nozawa, T. Matsuoka, S. Sugawa, and T. Ohmi, Advanced Metallization Conference, 2011/09/12, Without Invitation, English, The Japan Society of Applied Physics, Tokyo
  117. Clear Difference between the Chemical Structure of SiO2/Si Interfaces Formed Using Oxygen Radicals and Oxygen Molecules, T. Suwa, A. Teramoto, T. Ohmi, and T. Hattori, Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 2011/06/29, Without Invitation, English, The Institute of Electronics, Information and Communication Engineers The Institute of Electronics and Information Engineers, Daejeon
  118. Structural analysis of atomically flat SiO2/Si interface using CTR scattering around the 110 forbidden reflection, K. Nagata, M. Hattori, D. Kosemura, M. Takei, A. Ogura, T. Koganezawa, I. Hirosawa, T. Suwa, A. Teramoto, T. Hattori, and T. Ohmi, E-MRS ICAM IUMRS 2011 Spring Meeting , 2011/05/09, Without Invitation, English, International Union of Materials Research Society, Nice
  119. Cu Damascene Interconnects with an Organic Low-k Fluorocarbon Dielectric Deposited by Microwave Excited Plasma Enhanced CVD, X. Gu, T. Nemoto, Y. Tomita, A. Shirotori, R. Duyos-Mateo, K. Miyatani, A. Saito, Y. Kobayashi, A. Teramoto, S.-I. Kuroki, T. Nozawa, T. Matsuoka, S. Sugawa, and T. Ohmi, IEEE International Interconnect Technology Conference, 2011/05/09, Without Invitation, English, IEEE, Dresden
  120. Pr3Si6N11/Si3N4 Stacked High-k Gate Dielectrics with High Quality Ultrathin Si3N4 Interfacial Layers, H. Wakamatsu, A. Teramoto, and T. Ohmi, 219th ECS Meeting, 2011/05/01, Without Invitation, English, The Electrochemical Society, Montreal
  121. Clear Difference between the Chemical Structure of SiO2/Si Interface Formed Using Oxygen Radicals and that Formed Using Oxygen Molecules, T. Suwa, Y. Kumagai, A. Teramoto, T. Muro, T. Kinoshita, T. Hattori, and T. Ohmi, 219th ECS Meeting, 2011/05/01, Without Invitation, English, The Electrochemical Society, Montreal
  122. Understanding of Traps Causing Random Telegraph Noise Based on Experimentally Extracted Time Constants and Amplitude, K. Abe, A. Teramoto, S. Sugawa, and T. Ohmi, IEEE International Reliability Physics Symposium, 2011/04/10, Without Invitation, English, IEEE, Monterey
  123. Observation of Single Atomic Steps on an Ultra-Flat Si (100) Surface by a Differential Interference Contrast Microscope, Y.-G. Kim, S.-i. Kobayashi, R. Wen, K. Yasuda, T. Suwa, R. Kuroda, X. Li, A. Teramoto, T. Ohmi, and K. Itaya, he 2011 WPI-AIMR Annual Workshop, 2011/02/21, Without Invitation, English, Tohoku University, Sendai
  124. High reliable SiO2 Films on Atomically Flat Silicon Surface Formed by Low Temperature Pure Ar Annealing, X. Li, R. Kuroda, T. Suwa, A. Teramoto, S. Sugawa, and T. Ohmi, International Workshop on Dielectric Thin Film For Future Electron devices, 2011/01/20, Without Invitation, English, The Japan Society of Applied Physics, Tokyo
  125. Ultra-low Series Resistance W/ErSi2/n+-Si and W/Pd2Si/p+-Si S/D Electrodes for Advanced CMOS Platform, R. Kuroda, H. Tanaka, Y. Nakao, A. Teramoto, N. Miyamoto, S. Sugawa, and T. Ohmi, International Electron Device Meeting, 2010/12/06, Without Invitation, English, IEEE, San Francisco
  126. Statistical Evaluation of Random Telegraph Signal in MOFET, Akinobu Teramoto, Ken-ichi Abe, Shigetoshi Sugawa, and Tadahiro Ohmi, IEICE Technical Committee on Silicon Device and Materials, 2010/11/11, Without Invitation, Japanese, IEICE, Sendai
  127. Statistical Evaluation for Trap Energy Level of RTS Characteristics, TERAMOTO Akinobu, 2010/10/22, With Invitation, Japanese, The Japan Society of Applied Physics, Tokyo
  128. Strain evaluation in Si at atomically flat SiO2/Si interface, Maki Hattori, Daisuke Kosemura, Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Motohiro Tomita, Yuuki Mizukami, Yuuki Hashiguchi, Takuya Yamaguchi, Atsushi Ogura, Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi, Tomoyuki Koganezawa , IEICE Technical Committee on Silicon Device and Materials, 2010/10/22, Without Invitation, Japanese, IEICE, Sendai
  129. Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals, Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori, Toyohiko Kinoshita, Takayuki Muro , IEICE Technical Committee on Silicon Device and Materials, 2010/10/22, Without Invitation, Japanese, IEICE, Sendai
  130. Integration of Novel Non-porous Low-k Dielectric Fluorocarbon into Advanced Cu Interconnects, Xun Gu, Takenao Nemoto, Yugo Tomita, Akinobu Teramoto, Shin-Ichiro Kuroki, Shigetoshi Sugawa, Tadahiro Ohmi, IEICE Technical Committee on Silicon Device and Materials, 2010/10/22, Without Invitation, Japanese, IEICE, Sendai
  131. Low Resistance Source/Drain Contacts with Low Schottky Barrier for High Performance Transistors, Hiroaki Tanaka, Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi , IEICE Technical Committee on Silicon Device and Materials, 2010/10/21, Without Invitation, Japanese, IEICE, Sendai
  132. Tribological Effects of Brush Scrubbing in Post-CMP Cleaning on the Electrical Characteristics in the Novel Non-porous Low-k Dielectric on Cu Interconnects, X. Gu, T. Nemoto, Y. Tomita, A. Teramoto, S. Sugawa, and T. Ohmi, Advanced Metallization Conference, 2010/10/19, Without Invitation, English, The Japan Society of Applied Physics, Tokyo
  133. Electrical Characteristics of Novel Non-porous Low-k Dielectric Fluorocarbon on Cu Interconnects for 22nm Generation and Beyond, X. Gu, T. Nemoto, Y. Tomita, K. Miyatani, A. Saito, Y. Kobayashi, A. Teramoto, S.-I. Kuroki, T. Nozawa, T. Matsuoka, S. Sugawa, and T. Ohmi, Advanced Metallization Conference, 2010/10/19, Without Invitation, English, The Japan Society of Applied Physics, Tokyo
  134. Evaluation of Narrow Gap Filling Ability in Shallow Trench Isolation by Organosiloxane Sol-Gel Precursor, K. Watanuki, A. Inokuchi, A. Banba, N. Manabe, H. Suzuki, T. Koike, T. Adachi, T. Goto, A. Teramoto, Y. Shirai, S. Sugawa, and T. Ohmi, 218th ECS Meeting, 2010/10/10, Without Invitation, English, The Electrochemical Society, Las Vegas
  135. Techniques for high accurate and fast measurement of RTN and fabrication process conditions having a strong influence on RTN characteristics, K. Abe, A. Teramoto, S. Sugawa, and T. Ohmi, The Institute of Image Information and Television Engineers, 2010/09/27, Without Invitation, Japanese, The Institute of Image Information and Television Engineers, Tokyo
  136. Large Scale Test Circuits for Systematic Evaluation of Variability and Noise of MOSFETs’ Electrical Characteristics, Y. Kumagai, K. Abe, T. Fujisawa, S. Watabe, R. Kuroda, N. Miyamoto, T. Suwa, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2010/09/22, Without Invitation, English, The Japan Society of Applied Physics, Tokyo
  137. Drastic reduction of the low frequency noise in Si(100) p-MOSFETs , P. Gaubert, A. Teramoto, R. Kuroda, Y. Nakao, H. Tanaka, and T. Ohmi, International Conference on Solid State Devices and Materials, 2010/09/22, Without Invitation, English, The Japan Society of Applied Physics, Tokyo
  138. Impact of the Channel Direction Dependent Low Field Hole Mobility on Si(100), R. Kuroda, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2010/09/22, Without Invitation, English, The Japan Society of Applied Physics, Tokyo
  139. Strain field under SiO2/Si interface revealed by multiple X-ray diffraction phenomenon, W. Yashiro, Y. Yoda, T. Aratani, A. Teramoto, T. Hattori, and K. Miki, The Eleventh International Conference on Surface X-ray and Neutron Scattering, 2010/07/13, Without Invitation, English, DESY, Evanston
  140. Statistical evaluation for trap energy level of RTS characteristics, A. Teramoto, T. Fujisawa, K. Abe, S. Sugawa, and T. Ohmi, Symposium on VLSI Technology, 2010/06/15, Without Invitation, English, IEEE The Japan Society of Applied Physics, Honolulu
  141. Statistical evaluation of dynamic junction leakage current fluctuation using a simple arrayed capacitors circuit, K. Abe, T. Fujisawa, H. Suzuki, S. Watabe, R. Kuroda, S. Sugawa, A. Teramoto, and T. Ohmi, IEEE International Reliability Physics Symposium, 2010/05/02, Without Invitation, English, IEEE, Anaheim
  142. Impact of Work Function Optimized S/D Silicide Contact for High Current Drivability CMOS, Y. Nakao, R. Kuroda, H. Tanaka, T. Isogai, A. Teramoto, S. Sugawa, and T. Ohmi, 217th ECS Meeting, 2010/04/26, Without Invitation, English, The Electrochemical Society, Vancouver
  143. Atomically Flattening Technology at 850 ºC for Si(100) Surface, X. Li, A. Teramoto, T. Suwa, R. Kuroda, S. Sugawa, and T. Ohmi, 217th ECS Meeting, 2010/04/25, Without Invitation, English, The Electrochemical Society, Vancouver
  144. A Test Structure for Statistical Evaluation of pn Junction Leakage Current Based on CMOS Image SensorTechnology, K. Abe, T. Fujisawa, H. Suzuki, S. Watabe, R. Kuroda, S. Sugawa, A. Teramoto, and T. Ohmi, IEEE International Conference on Microelectronic Test Structures, Hiroshima, 2010/03/22, Without Invitation, English, IEEE, Hiroshima
  145. Qualification of Dynamic Pressure Distribution on Wafer by Pressure Sensing Sheet during Polishing, X. Gu, T. Nemoto, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Planarization/CMP Technology, 2009/11/19, Without Invitation, English, SEMI, Fukuoka
  146. The Study of Electrical and Structual Properties of SiO2 Film Containing Metal oxide using Organosiloxane-based Silica Precursor, K. Watanuki, A. Inokuchi, A. Bamba, H. Suzuki, T. Koike, T. Adachi, A. Teramoto, Y. Shirai, S. Sugawa, and T. Ohmi, AVS 56th International Symposium & Exhibition, 2009/11/08, Without Invitation, English, AVS, San Jose
  147. Study on compositional transition layers at SiO2/Si interface formed by radical oxidation, T. Suwa, A. Teramoto, T. Ohmi, T. Hattori, Y. KatoT. Kinoshita, T. Muro,, IEICE Technical Committee on Silicon Device and Materials, 2009/10/22, Without Invitation, Japanese, IEICE, Sendai
  148. Statistical Analysis of Random Telegraph Signal Using a Large-Scale Array TEG with a Long Time Measurement, T. Fujisawa, K. Abe, S. Watabe, N. Miyamoto, A. Teramoto, S. Sugawa, T. Ohmi, IEICE Technical Committee on Silicon Device and Materials, 2009/10/22, Without Invitation, Japanese, IEICE, Sendai
  149. Low Contact Resistance with Low Silicide/p+-Silicon Schottky Barrier for High Performance p-channel MOSFETs , H. Tanaka, T. Isogai, T. Goto, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2009/10/07, Without Invitation, English, The Japan Society of Applied Physics, Sendai
  150. Impact of Very Low Series Resistance due to Raised Metal S/D Structure with Very Low Contact Resistance Silicide for sub-100-nm nMOSFET, R. Kuroda, T. Isogai, H. Tanaka, Y. Nakao, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2009/10/07, Without Invitation, English, The Japan Society of Applied Physics, Sendai
  151. Suppression of Vth Variability for n-MOSFET in Dual Oxide Formation Process, Y. Kamata, K. Shibusawa, K. Abe, S. Sugawa, A. Teramoto, and T. Ohmi, International Conference on Solid State Devices and Materials, 2009/10/07, Without Invitation, English, The Japan Society of Applied Physics, Sendai
  152. Statistical Analysis of Time Constant Ratio of Random Telegraph Signal with Very Large-Scale Array TEG, T. Fujisawa, K. Abe, S. Watabe, N. Miyamoto, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2009/10/07, Without Invitation, English, The Japan Society of Applied Physics, Sendai
  153. Light-emitting Diode Based on ZnO by Plasma Enhanced MOCVD Employing Microwave Exited Plasma , H. Asahara, D. Takamizu, A. Inokuchi, M. Hirayama, A. Teramoto, and T. Ohmi, International Conference on Solid State Devices and Materials, 2009/10/07, Without Invitation, English, The Japan Society of Applied Physics, Sendai
  154. Impact of Channel Doping Concentration on Random Telegraph Signal Noise, K. Abe, A. Teramoto, S. Watabe, T. Fujisawa, S. Sugawa, Y. Kamata, K. Shibusawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2009/10/07, Without Invitation, English, The Japan Society of Applied Physics, Sendai
  155. Very High Performance CMOS on Si(551) Surface Using Radical Oxidation Silicon Flattening Technology and Accumulation-Mode SOI Device Structure, W. Cheng, A. Teramoto, and T. Ohmi, 216th ECS Meeting, 2009/10/04, Without Invitation, English, The Electrochemical Society, Vienna
  156. Damage free very low electron temperature plasma process for low Flicker noise in p-MOS fabricated on (100) and (110) silicon-oriented wafers, P. Gaubert, A. Teramoto, T. Ohmi, The 39th European Solid-State Device Research Conference, 2009/09/14, Without Invitation, English, IEEE, Athens
  157. Obvious suppression of performance degradation induced by thermal effect in SOI power LDMOSFETs using accumulation mode device structure, W. Cheng, A. Teramoto, and T. Ohmi, 13th European Conference on Power Electronics and Applications, 2009/09/08, Without Invitation, Japanese, IEEE, Barcelona
  158. Experimental demonstration and analysis of high performance and low 1/f noise Tri-gate MOSFETs by optimizing device structure, W. Cheng, A. Teramoto, T. Ohmi, The 16th International Conference Insulating Films on Semiconductors, 2009/06/29, Without Invitation, English, Cambridge
  159. MOS Transistors fabricated on Si(551) surface based on radical reaction processes, A. Teramoto, W. Cheng, C. F. Tye, S. Sugawa, and T. Ohmi, Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 2009/06/24, With Invitation, Japanese, The Institute of Electronics and Information Engineers The Institute of Electronics, Information and Communication Engineers, Busan
  160. A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies, K. Abe, T. Fujisawa, A. Teramoto, S. Watabe, S. Sugawa, and T. Ohmi, sia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 2009/06/24, Without Invitation, English, The Institute of Electronics and Information Engineers The Institute of Electronics, Information and Communication Engineers, Busan
  161. Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron, T. Suwa, T. Aratani, M. Higuchi, S. Sugawa, E. Ikenaga, J. Ushio, H. Nohira, A. Teramoto, T. Ohmi, and T. Hattori, Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 2009/06/24, Without Invitation, English, The Institute of Electronics and Information Engineers The Institute of Electronics, Information and Communication Engineers, Busan
  162. Suppression of 1/f Noise in Accumulation Mode FD-SOI MOSFETs on Si(100) and (110) Surfaces, W. Cheng, C. Tye, P. Gaubert, A. Teramoto, S. Sugawa, and T. Ohmi, 20th International Conference on Noise and Fluctuations, 2009/06/14, Without Invitation, English, IEEE, Pisa
  163. Thermal Decomposition Characteristics of Metal-organic Materials of Zinc Oxide for Evaluation as MOCVD Precursor, K. Watanuki, H. Asahara, A. Inokuchi, T. Kadota, C. Hasegawa, H. Kanato, A. Teramoto, Y. Shirai, and T. Ohmi, 215th ECS Meeting, 2009/05/24, Without Invitation, English, The Electrochemical Society, San Francisco
  164. UV-Raman Spectroscopy Study on SiO2/Si Interface, M. Hattori, T. Yoshida, D. Kosemura, A. Ogura, T. Suwa, A. Teramoto, T. Hattori, and T. Ohmi, 215th ECS Meeting, 2009/05/24, Without Invitation, English, The Electrochemical Society, San Francisco
  165. Reduction of Scratch on Brush Scrubbing in Post CMP Cleaning by Analyzing Contact Kinetics on Ultra Low-k Dielectric, X. Gu, T. Nemoto, A. Teramoto, T. Ito, and T. Ohmi, 215th ECS Meeting, 2009/05/24, Without Invitation, English, The Electrochemical Society, San Francisco
  166. Atomically Flat Interface for the Reduction of the Low Frequency Noise on Si(100) nMOS Transistors, P. Gaubert, R. Kuroda, S. Endo, Y. Kuboyama, T. Kitagaki, H. Nada, H. Tamura, A. Teramoto, and T. Ohmi, 215th ECS Meeting, 2009/05/24, Without Invitation, English, The Electrochemical Society, San Francisco
  167. Deposition of Noncrystalline SiGe by Magnetron Sputtering on SiO2 Substrate, A. Hiroe, T. Goto, A. Teramoto, T. Ohmi, IEICE, 2009/05/07, Without Invitation, Japanese, IEICE, Toyohashi
  168. Asymmetry of RTS characteristics along source-drain direction and statistical analysis of process-induced RTS, K. Abe, Y. Kumagai, S. Sugawa, S. Watabe, T. Fujisawa, A. Teramoto, and T. Ohmi, IEEE International Reliability Physics Symposium, 2009/04/26, Without Invitation, English, IEEE, Montreal
  169. Optimizing Pad Groove Design and Polishing Kinematics for Reduced Shear Force, Low Force Fluctuation and Optimum Removal Rate Attributes of Copper CMP, Y. Sampurno, A. Philipossian, S. Theng, T. Nemoto, X. Gu, Y. Zhuang, A. Teramoto, and T. Ohmi, MRS Spring Meeting, 2009/04/13, Without Invitation, English, Material Research Society, San Francisco
  170. Effect of Pad Groove Design and Polisher Kinematics in Reducing Average and Variance of Shear Force and Increasing Removal Rate in Copper CMP, Y. Sampurno, A. Philipossian, S. Theng, T. Nemoto, X. Gu, Y. Zhuang, A. Teramoto, and T. Ohmi, MRS Spring Meeting, 2009/04/13, Without Invitation, English, Material Research Society, San Francisco
  171. Novel End-point Detection Method by Monitoring Shear Force Oscillation Frequency for Barrier Metal Polishing in Advanced LSI, X. Gu, T. Nemoto, A. Philipossian, J. Cheng, Y. A. Sampurno, Y. Zhuang, A. Teramoto, T. Ito, and T. Ohmi, MRS SPRING MEETING, 2009/04/13, Without Invitation, English, Material Research Society, San Francisco
  172. A Test Structure for Statistical Evaluation of Characteristics Variability in a Very Large Number of MOSFETs, S. Watabe, S. Sugawa, K. Abe, T. Fujisawa, N. Miyamoto, A. Teramoto, and T. Ohmi, IEEE International Conference on Microelectronic Test Structures, 2009/03/30, Without Invitation, English, IEEE, Oxnard
  173. Advanced Method for Measuring Ultra-Low Contact Resistivity Between Silicide and Silicon Based on Cross Bridge Kelvin Resistor, T. Isogai, H. Tanaka, A. Teramoto, T. Goto, S. Sugawa, and T. Ohmi, IEEE International Conference on Microelectronic Test Structures, 2009/03/30, Without Invitation, English, IEEE, Oxnard
  174. Accurate Time Constant of Random Telegraph Signal Extracted by a Sufficient Long Time Measurement in Very Large-Scale Array TEG, T. Fujisawa, K. Abe, S. Watabe, N. Miyamoto, A. Teramoto, S. Sugawa, and T. Ohmi, IEEE International Conference on Microelectronic Test Structures, 2009/03/30, Without Invitation, English, IEEE, Oxnard
  175. Micro Crystalline Si1-xGex Deposited by Magnetron Sputtering, A. Hiroe, T. Goto, A. Teramoto, and T. Ohmi, 214th ECS Meeting, 2008/10/12, Without Invitation, English, The Electrochemical Society, Honolulu
  176. Three-Step Room Temperature Cleaning of Bare Silicon Surface for Radical Based Semiconductor Manufacturing, R. Hasebe, A. Teramoto, R. Kuroda, T. Suwa, S. Sugawa, and T. Ohmi, 214th ECS Meeting, 2008/10/12, Without Invitation, English, The Electrochemical Society, Honolulu
  177. Hole Mobility in Si(110) p-MOS Transistors, P. Gaubert, A. Teramoto, T. Ohmi, 214th ECS Meeting, 2008/10/12, Without Invitation, English, The Electrochemical Society, Honolulu
  178. Improved High Temperature Characteristics in Accumulation-mode Fully Depleted SOI MOSFETs on Si(100) and (110) Surfaces, W. Cheng, A. Teramoto, and T. Ohmi, 214th ECS Meeting, 2008/10/12, Without Invitation, English, The Electrochemical Society, Honolulu
  179. Statistical evaluation of characteristics variation and RTS noise of MOSFETs, T. Fujisawa, S. Sugawa, S. Watabe, K. Abe, A. Teramoto, T. Ohmi, IEICE, 2008/10/09, Without Invitation, Japanese, IEICE, Sendai
  180. The data analysis and measurement technique of the atomic force microscopy for the atomically flat silicon surface, M. Konda, A. Teramoto, T. Suwa, R. Kuroda, T. Ohmi, IEICE, 2008/10/09, Without Invitation, Japanese, IEICE, Sendai
  181. Evaluation of Post Cu-CMP Cleaning Chemicals for Non-Porous Ultra Low-k Dielectric Fluorocarbon Film, X. Gu, T. Nemoto, A. Teramoto, T. Itoh, T. Ohmi, IEICE, 2008/10/09, Without Invitation, Japanese, IEICE, Sendai
  182. Investigation of Novel End-Point-Detection for Ta/Cu CMP, Xun Gu, Takenao Nemoto, Ara Philipossian・Yasa Adi Sampurno, Jiang Cheng, Yun Zhuang, Akinobu Teramoto, Takashi Ito, Tadahiro Ohmi, IEICE, 2008/10/09, Without Invitation, Japanese, IEICE, Sendai
  183. Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy, T. Suwa, T. Aratani, S. Sugawa, E. Ikenaga, J. Ushio, H. Nohira, A. Teramoto, T. Ohmi, T. Hattori, IEICE, 2008/10/09, Without Invitation, Japanese, IEICE, Sendai
  184. Correlation between Stress Induced Leakage Current and Random Telegraph Signal noise, Y. Kumagai, A. Teramoto, T. Fujisawa, S. Watabe, T. Suwa, N. Miyamoto, S. Sugawa, T. Ohmi, IEICE, 2008/10/08, Without Invitation, Japanese, Sendai
  185. CMOSFET Featuring Atomically Flat Gate Insulator Film/Silicon Interface on (100) Orientation Surface, R. Kuroda, A. Teramoto, T. Suwa, Y. Nakao, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2008/09/23, Without Invitation, English, The Japan Society of Applied Physics, Tsukuba
  186. A Study on Very High Performance Novel Balanced FD-SOI CMOSFETs on Si(110) Using Accumulation Mode Device Structure for RF Analog Circuits, W. Cheng, A. Teramoto, C.-F. Tye, R. Kuroda, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2008/09/23, Without Invitation, English, The Japan Society of Applied Physics, Tsukuba
  187. Impact of Tungsten Capping Layer on Yttrium Silicide for Low Resistance Source/Drain Contacts, T. Isogai, H. Tanaka, T. Goto, A. Teramoto, S. Sugawa and T. Ohmi, International Conference on Solid State Devices and Materials, 2008/09/23, Without Invitation, English, The Japan Society of Applied Physics, Tsukuba
  188. Effects of Ion-Bombardment-Assist and High Temperature on Growth of Zinc Oxide Films by Microwave Excited High Density Plasma Enhanced MOCVD, H. Asahara, At. Inokuchi, K. Watanuki1, M. Hirayama, A. Teramoto, and T. Ohmi, International Conference on Solid State Devices and Materials, 2008/09/23, Without Invitation, English, The Japan Society of Applied Physics, Tsukuba
  189. μc-Si1-xGex Deposition on SiO2 by RF Magnetron Sputtering, A. Hiroe, T. Goto, A. Teramoto, and T. Ohmi, International Conference on Solid State Devices and Materials, 2008/09/23, Without Invitation, English, The Japan Society of Applied Physics, Tsukuba
  190. Anomalous RTS Extractions from a Very Large Number of n-MOSFETs using TEG with 0.47 Hz - 3.0 MHz Sampling Frequency, K. Abe, T. Fujisawa, A. Teramoto, S. Watabe, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2008/09/23, Without Invitation, English, The Japan Society of Applied Physics, Tsukuba
  191. Effect of various cleaning solutions and brush scrubber kinematics on the frictional attributes of post copper CMP cleaning process, Y. Zhuang, T. Sun, Y. Sampurno, X. Gu, T. Nemoto, F. Sudatgho, S. N. Theng, A. Philipossian, A. Teramoto, and T. Ohmi, Tthe 9th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, 2008/09/21, Without Invitation, English, IMEC, Bruges
  192. 3-step room temperature wet cleaning process for silicon substrate, R. Hasebe, A. Teramoto, R. Kuroda, T. Suwa, S. Sugawa, and T. Ohmi, The 9th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, 2008/09/21, Without Invitation, English, IMEC, Bruges
  193. Damage-free post-CMP cleaning solution for Low-K fluorocarbon on advanced interconnects, X. Gu, A. Teramoto, T. Nemoto, R. Hasebe, T. Ito, and T. Ohmi, The 9th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, 2008/09/21, Without Invitation, English, IMEC, Bruges
  194. Atomically flat gate insulator/silicon (100) interface formation introducing high mobility, ultra-low noise, and small characteristics variation CMOSFET, R. Kuroda, A. Teramoto, T. Suwa, R. Hasebe, X. Li, M. Konda, S. Sugawa, and T. Ohmi, 38th European Solid-State Device Research Conference, 2008/09/15, Without Invitation, English, IEEE, Edinburgh
  195. Impact of Performance and Reliability Boosters in Novel FD-SOI CMOS Devices on Si(110) Surface for Analog Applications, W. Cheng, A. Teramoto, R. Kuroda, C.-F. Tye, S. Watabe, S. Sugawa, and T. Ohmi, 29th International Conference on the Physics of Semiconductors, 2008/07/27, Without Invitation, English, The International Unions of Pure and Applied Physics, Rio de Janeiro
  196. The data analysis technique of the atomic force microscopy for the atomically flat silicon surface, M. Konda, A. Teramoto, T. Suwa, R. Kuroda, and T. Ohmi, Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 2008/07/02, Without Invitation, English, The Institute of Electronics, Information and Communication Engineers The Institute of Electronics and Information Engineers, Sapporo
  197. A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation, H. Imai, M. Sugimura, M. Kawasaki, A. Teramoto, S. Sugawa, and T. Ohmi, Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 2008/07/02, Without Invitation, English, The Institute of Electronics, Information and Communication Engineers The Institute of Electronics and Information Engineers, Sapporo
  198. Stress Induced Leakage Current and Random Telegraph Signal, A. Teramoto, Y. Kumagai, K. Abe, T. Fujisawa, S. Watabe, T. Suwa, N. Miyamoto, S. Sugawa, and T. Ohmi, 15th Workshop on Dielectrics in Microelectronics, 2008/06/20, Without Invitation, English, Innovations for High Performance Microelectronics, Berlin
  199. Different mechanism to explain the 1/f noise in n-and p-SOI-MOS transistors fabricated on (110) and (100) silicon oriented wafers, P. Gaubert, A. Teramoto, W. Cheng, T. Hamada, and T. Ohmi, 5th Workshop on Dielectrics in Microelectronics, 2008/06/20, Without Invitation, English, Innovations for High Performance Microelectronics, Berlin
  200. A new approach to realize high performance RF power FETs on Si(110) surface, W. Cheng, A. Teramoto, and T. Ohmi, IEEE Power Electronics Specialists Conference, 2008/06/15, Without Invitation, English, IEEE, Rohdes
  201. New insulation material with flat-surface, low coefficient of thermal expansion, low-dielectric-loss for next generation semiconductor packages, M. Sugimura, H. Imai, M. Kawasaki, K. Kamata, K. Fujii, Y. Fujito, S. Yonehara, A. Teramoto, S. Sugawa, and T. Ohmi, Electronic Components and Technology Conference, 2008/05/27, Without Invitation, English, IEEE, Lake Buena Vista
  202. Impact of New Approach to Improve RF Power FETs Performance on Si(110) Surface, W. Cheng, A. Teramoto, and T. Ohmi, 213th ECS Meeting, 2008/05/18, Without Invitation, English, The Electrochemical Society, Phoenix
  203. Statistical evaluation for anomalous SILC of tunnel oxide using integrated array TEG, Y. Kumagai, A. Teramoto, S. Sugawa, T. Suwa, and T. Ohmi, IEEE International Reliability Physics Symposium, 2008/04/27, Without Invitation, English, IEEE, Phoenix
  204. International Semiconductor Technology Conference, T. Nemoto, G. Xun, H. Imai, A. Teramoto, T. Ito, S. Sugawa, and T. Ohmi, MRS Spring Meeting, 2008/03/24, Without Invitation, English, Material Research Society, San Francisco
  205. Characterization of MOSFETs intrinsic performance using in-wafer advanced Kelvin-contact device structure for high performance CMOS LSIs, R. Kuroda, A. Teramoto, T. Komuro, C. Weitao, S. Watabe, T. Ching Foa, S. Sugawa, and T. Ohmi, IEEE International Conference on Microelectronic Test Structures, 2008/03/24, Without Invitation, English, IEEE, Edinburgh
  206. High Performance Bottom Gate μc-Si TFT Fabricated by Microwave Plasma CVD, A. Hiroe, A. Teramoto, and T. Ohmi, MRS Symposium, 2008/03/24, Without Invitation, English, Material Research Society, San Francisco
  207. The Cleaning Method Which is Able to Keep the Smoothness of Si (100), X. Li, X. Gu, A. Teramoto, R. Kuroda, R. Hasebe, T. Suwa, N. Yu, S. Sugawa, T. Ito and T. Ohmi, International Semiconductor Technology Conference 2008, 2008/03/15, Without Invitation, English, The Institute of Scientific and Technical Communicators, Shanghai
  208. Atomically Flat Gate Insulator/Silicon (100) Interface Formation Technology for High Performance LSI, A. Teramoto, R. Kuroda, T. Suwa and T. Ohmi, WPI & IFCAM Joint Workshop -Challenge of Interdisciplinary Materials Science to Technological Innovation of the 21st Century, 2008/02, Without Invitation, English, Tohoku University, Sendai
  209. High performance Bottom Gate μc-Si TFT Fabricated by Low Damage, High Density Plasma Source, A. Hiroe, M. Hirayama, Y. Shirai, A. Teramoto and T.Ohmi, The 14th International Display Workshops, 2007/12/05, Without Invitation, English, The Institute of Image Information and Television Engineers The Society for Information Display, Sapporo
  210. Development of a high efficiency PFC abatement system utilizing plasma and Ca(OH)2/CaO under a decompression atmosphere, K. Suzuki, Y. Ishihara, K. Sakoda, Y. Shirai, M. Hirayama, A. Teramoto, T. Ohmi, and T. Watanabe, International Symposium on Semiconductor Manufacturing, 2007/10/15, Without Invitation, English, IEEE, Santa Clara
  211. Development of a Xenon recycling and supply system for plasma process, M. Yamawaki, T. Urakami, Y. Ishihara, Y. Shirai, A. Teramoto, and T. Ohmi, International Symposium on Semiconductor Manufacturing, 2007/10/15, Without Invitation, English, IEEE, Santa Clara
  212. Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node, W. Cheng, A. Teramoto, and T. Ohmiu, 212th ECS Meeting, 2007/10/07, Without Invitation, English, The Electrochemical Society, Washington D.C.
  213. High Mobility Bottom Gate Microcrystalline Si TFT Fabricated by Microwave Plasma CVD, A. Hiroe, A. Teramoto, T. Ohmi, IEICE, 2007/10/04, Without Invitation, Japanese, IEICE, Sendai
  214. Statistical Evaluation of Characteristics Variability caused by Plasma Processes, S. Watabe, S. Sugawa, K. Abe, T. Fujisawa, N. Miyamoto, A. Teramoto, T. Ohmi, IEICE, 2007/10/04, Without Invitation, Japanese, Sendai
  215. Nitrogen Profile Study for SiON Gate Dielectrics of Advanced DRAM, Shigemi Murakawa, Masashi Takeuchi, Minoru Honda, Shu-ichi Ishizuka, Toshio Nakanishi, Yoshihiro Hirota, Takuya Sugawara, Yoshitsugu Tanaka, Yasushi Akasaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi, IEICE, 2007/10/04, Without Invitation, Japanese, IEICE, Sendai
  216. The Evaluation of New Amorphous Hydrocarbon Film aCHx, for Low-k Copper Barrier Film, H. Ishikawa, T. Nozawa, T. Matsuoka, A. Teramoto, M. Hirayama, T. Ito, T, Ohmi, IEICE, 2007/10/04, Without Invitation, Japanese, IEICE, Sendai
  217. Atomic order flatting technology of silicon surface, Tomoyuki Suwa, Rihito Kuroda, Akinobu Teramoto, Tadahiro Ohmi, IEICE, 2007/10/04, Without Invitation, Japanese, IEICE, Sendai
  218. Statistical Evaluation of Random Telegraph Signal Using a Very Large-scale Array TEG, Kennichi Abe, Shigetoshi Sugawa, Rihito Kuroda, Shunnichi Watabe, Akinobu Teramoto, Tadahiro Ohmi, IEICE, 2007/10/04, Without Invitation, Japanese, IEICE, Sendai
  219. Modeling and Implementation of Subthreshold Characteristics of Accumulation-Mode MOSFETs for Various SOI Layer Thickness and Impurity Concentrations, R. Kuroda, A. Teramoto, W. Cheng, S. Sugawa, and T. Ohmi, IEEE International SOI Conference, 2007/10/01, Without Invitation, English, IEEE, Indian Wells
  220. Performance Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic-and Accumulation- Mode MOSFETs, R. Kuroda, A. Teramoto, S. Sugawa and T. Ohmi, International Conference on Solid State Devices and Materials, 2007/09/18, Without Invitation, English, The Japan Society of Applied Physics, Tsukuba
  221. he Evaluation of New Amorphous Hydrocarbon Film aCHx, for Copper Barrier Dielectric Film in Low-k Copper Metallization, H. Ishikawa, T. Nozawa, T. Matsuoka, A. Teramoto, M. Hirayama, T. Ito and T. Ohmi, International Conference on Solid State Devices and Materials, 2007/09/18, Without Invitation, English, The Japan Society of Applied Physics, Tsukuba
  222. Low Dielectric Constant Non- Porous Fluorocarbon Films for Inter-Layer Dielectric, A. Itoh, A. Inokuchi, S. Yasuda, A. Teramoto, T. Goto, M. Hirayama and T. Ohmi, International Conference on Solid State Devices and Materials, 2007/09/18, Without Invitation, English, The Japan Society of Applied Physics, Tsukuba
  223. Low Contract Resistance with Low Schottky Barrier for N-Type Silicon Using Yttrium Silicide, T. Isogai, H. Tanaka, T. Goto, A. Teramoto, S. Sugawa and T. Ohmi, International Conference on Solid State Devices and Materials, 2007/09/18, Without Invitation, English, The Japan Society of Applied Physics, Tsukuba
  224. Characterization of Zinc Oxide Films Grown by a Newly Developed Plasma Enhanced MOCVD Employing Microwave Excited High Destiny Plasma, H. Asahara, A. Inokuchi, K.Watanuki, M. Hirayama, A. Teramoto and T. Ohmi, International Conference on Solid State Devices and Materials, 2007/09/18, Without Invitation, English, The Japan Society of Applied Physics, Tsukuba
  225. Statistical Analysis of RTS Noise and Low Frequency Noise in 1M MOSFETs Using an Advanced TEG, K. Abe, S. Sugawa, S. Watabe, N. Miyamoto, A. Teramoto, M. Toita, Y. Kamata, K. Shibusawa, and T. Ohmi, 9th International Conference on Noise and Fluctuations, 2007/09/09, Without Invitation, English, IEEE, Tokyo
  226. Impact of the channel direction on the 1/f noise in SOI -MOSFETs fabricated on (100) and (110) silicon oriented wafers, P. Gaubert, W. Cheng, A. Teramoto and T. Ohmi, 19th International Conference on NOISE AND FLUCTUATIONS-ICNF2007, 2007/09/09, Without Invitation, English, IEEE, Tokyo
  227. 13.56 and 100 MHz Coupled Mode Rf-Sputtering for Ferroelectric Sr2(Ta1-x,Nbx)2O7 (STN) Film Applied to One-Transistor-Type Ferroelectric Random Access Memory, I. Takahashi, T. Shinohara, A. Teramoto, M. Hirayama, S. Sugawa, and T. Ohmi, 11th European Meeting on Ferroelectricity, 2007/09/03, Without Invitation, English, Bled
  228. Microwave-Excited Plasma Enhanced Metal-Organic Chemical Vapor Deposition with Ion-Bombardment-Assistance for Forming Ferroelectric Sr2(Ta1-x,Nbx)2O7 (STN) Thin Film, I. Takahashi, M. Hirayama, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Electroceramics , 2007/07, Without Invitation, English, Arusha
  229. Random Telegraph Signal Statistical Analysis using a Very Large-scale Array TEG with 1M MOSFETs, K. Abe, S. Sugawa, S. Watabe, N. Miyamoto, A. Teramoto, Y. Kamata, K. Shibusawa, M. Toita, and T. Ohmi, IEEE Symposium on VLSI Technology, 2007/06/12, Without Invitation, English, The Japan Society of Applied Physics IEEE, Kyoto
  230. Study on subnitride and valence band offset at Si3N4 / Si interface formed using nitrogen radicals, Akinobu Teramoto, Takashi Aratani, Masaaki Higuchi, Eiji Ikenaga, Hiroshi Nohira, Shigetoshi Sugawa, Tadahiro Ohmi, Takeo Hattori, 2007/06/08, Without Invitation, Japanese, IEICE, Higashi Hiroshima
  231. Statistical Evaluation of Localized Low Gate Current through Tunnel Dielectric using Integrated Array TEG, Yuki Kumagai, A.kinobu Teramoto, Shigetoshi Sugawa, Tomoyuki Suwa, Tadahiro Ohmi, IEICE, 2007/06/07, Without Invitation, Japanese, IEICE, Higashihiroshima
  232. Analysis of Source Follower Random Telegraph Signal Using nMOS and pMOS Array TEG, K. Abe, S. Sugawa, R. Kuroda, S. Watabe, N. Miyamoto, A. Teramoto, T. Ohmi, Y. Kamata, and K. Shibusawa, International Image Sensor Workshop, 2007/06/07, Without Invitation, English, IEEE Electron Devices Society Institute of Television Engineers of Japan (ITEJ) Jet Propulsion Laboratory Siimpel Corporation Walter Kosonocky Award, Ogunquit
  233. Fabrication of Pt/Sr2(Ta1-x,Nbx)2O7/SiO2/Si Field-Effect Transistor for One-Transistor-Type Ferroelectric Random Access Memory, I. Takahashi, K. Azumi, Y. Shirai, M. Hirayama, A. Teramoto, S. Sugawa, and T. Ohmi, 6th WSEAS International Conference on MICROELECTRONICS, NANOELECTRONICS, OPTOELECTRONICS, 2007/05/27, Without Invitation, English, World Scientific and Engineering Academy and Society, Istanbul
  234. Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage, R. Kuroda, A. Teramoto, W. Cheng, S. Sugawa and T. Ohmi, 211th Meeting of The Electrochemical Society, 2007/05/06, Without Invitation, English, The Electrochemical Society, Chicago
  235. Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si(110) Surface, W. Cheng, A. Teramoto, C. Tye, P. Gaubert, M. Hirayama, S. Sugawa and T. Ohmi, 211th Meeting of The Electrochemical Society, 2007/05/06, Without Invitation, English, The Electrochemical Society, Chicago
  236. NBTI Mechanism Based on Hole-Injection for Accurate Lifetime Prediction, A. Teramoto, R. Kuroda, and T. Ohmi, 211th Meeting of The Electrochemical Society, 2007/05/06, With Invitation, English, The Electrochemical Society, Chicago
  237. Formation of Ferroelectric Sr2(Ta1-x,Nbx)2O7 Film (STN) on SiON formed by microwave-excited plasma and (Ba1-x,Srx)TiO3(BST) by rf sputtering applied to One-Transistor-Type Ferroelectric Memory Device, I.Takahashi, T. Suwa, K. Azumi, T. Isogai, Y. Shirai, M. Hirayama, A. Teramoto, S. Sugawa, and T. Ohmi, The 19th International Symposium of Integrated Ferroelectrics, 2007/05, Without Invitation, English, Bordeaux
  238. High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs, W. Cheng, A. Teramoto, R. Kuroda, M. Hirayama, and T. Ohmi, The 15th Biennial Conference on Insulating Films on Semiconductors, 2007/03/24, Without Invitation, English, Athens
  239. Development of Microwave-Excited Plasma Enhanced Metal-Organic Chemical Vapor deposition System and Formation of Ferroelectric Sr2(Ta1-x,Nbx)2O7 Film, Ichirou Takahashi, Kiyoshi Funawa, Keita Azumi, Satoru Yamashita, Yasuyuki Shirai, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi, IEICE, 2007/03/15, Without Invitation, Japanese, IEICE, Tokyo
  240. Preperation and Electrical Properties of Ultrathin Stacked Si3N4/High-k Dielectric Pr3Si6N11 Films grown in Radical Reaction Based MOCVD Systems, H. Wakamatsu, I. Takahashi, A. Teramoto, and T. Ohmi, The Joint International Conference of 4th International Symposium on System Construction of Global-Network-Oriented Ioformation Electronics and Student-Organizing International Mini-Conference on Ioformation Electronics System, 2007/01, Without Invitation, English, Tohoku University, Sendai
  241. High Quality Gate Insulator Film Formation on SiC at Low Temperature, Koutaro Tnaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi, IEICE, 2006/12/14, Without Invitation, Japanese, IEICE, Kyoto
  242. Electric and interface characteristics of Si3N4 films formed by directly radical NH on Si (110) and Si (100) surfaces, M. Higuchi, T. Suwa, T. Aratani, T. Hamada, A. Teramoto, T. Hattori, S. Sugawa, T. Ohmi, S. Shinagawa, H. Nohira, and E. Ikenaga, 7th IEEE Semiconductor Interface Specialists Conference, 2006/12/07, Without Invitation, English, IEEE, San Diego
  243. Revolutional Progress of Silicon Technologies Exhibiting Very High Speed Performance Over 50 GHz Clock Rate, T. Ohmi, A. Teramoto, R. Kuroda, and N. Miyamoto, The 6th Taiwan-Japan Microelectronics International Symposium, 2006/11/01, With Invitation, English, National Chiao Tung University, Hsinchu
  244. Radical Oxidation on Ultra Pure Silicon Surface, K. Kawase, M. Higuchi, T. Suwa, H. Umeda, M. Inoue, A. Teramoto, T. Hattori, S. Sugawa, and T. Ohmi, 210th ECS Meeting, 2006/10/29, Without Invitation, English, The Electrochemical Society, Mexico
  245. Impact of improved mobility and low flicker noise MOS transistors using accumulation mode fully depleted silicon-on-insulator devices, W. Cheng, A. Teramoto, P. Gaubert, M. Hirayama, and T. Ohmi, International Conference on Solid-State and Integrated Circuit Technology, 2006/10/23, Without Invitation, English, IEEE, Shanghai
  246. Consecutive uniform etching process in a single chamber using the microwave-excited plasma etcher with RLSA, Kazuyuki Ikenaga, Tetsuya Goto, Akinobu Teramoto, Masaki Hirayama, Toshihisa Nozawa, Tadahiro Ohmi, IEICE, 2006/10/05, Without Invitation, Japanese, IEICE, Sendai
  247. Very Low Bit Error Rate in Flash Memory Using Tunnel Dielectrics Formed by Kr/O_2/NO Plasma Oxynitridation, Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi, IEICE, 2006/10/05, Without Invitation, Japanese, IEICE, Sendai
  248. Electrical Characteristics and Interface Structure of Ultra-thin Si_3N_4 films on Si (100) and Si (110), T. Aratani, M. Higuchi, T. Hamada, A. Teramoto, T. Hattori, S. Sugawa, T. Ohmi, S. Shinagawa, H. Nohira, E. Ikenaga, IEICE, 2006/10/05, Without Invitation, Japanese, IEICE, Sendai
  249. A Study on Statistical Evaluation Method for the Variation of MOSFETs, K. Abe, S. Watabe, S. Sugawa, A. Teramoto, T. Ohmi, IEICE, 2006/10/05, Without Invitation, Japanese, IEICE, Sendai
  250. A New Statistical Evaluation Method for the Variation of MOSFETs, S. Watabe, S. Sugawa, A. Teramoto, and T. Ohmi, International Conference on Solid State Devices and Materials, 2006/09/12, Without Invitation, English, The Japan Society of Applied Physics, Yokohama
  251. Technology of Ferroelectric Thin Film Formation with Large Coercive Field for Future Scaling Down of Ferroelectric Gate FET Memory Device, I. Takahashi, T. Isogai, K. Azumi, M. Hirayama, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2006/09/12, Without Invitation, English, The Japan Society of Applied Physics, Yokohama
  252. Formation of Ferroelectric Sr2(Ta1-x,Nbx)2O7 Thin Film on Amorphous SiO2 by Microwave-Excited Plasma Enhanced Metalorganic Chemical Vapor Deposition, I. Takahashi, K. Funaiwa, S. K. Azumi, Yamashita, Y. Shirai, M. Hirayama, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2006/09/12, Without Invitation, English, The Japan Society of Applied Physics, Yokohama
  253. Very Low Bit Error Rate in Flash Memory using Tunnel Dielectrics formed by Kr/O2/NO Plasma Oxynitridation, T. Suwa, H. Takahashi, Y. Kumagai, G. Fujita, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2006/09/12, Without Invitation, English, The Japan Society of Applied Physics, Yokohama
  254. Low Leakage Current and Low Resistivity p+n Diodes on Si(110) Fabricated by Ga+/B+ Combination I/I and Low Temperature Annealing, H. Imai, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2006/09/12, Without Invitation, English, The Japan Society of Applied Physics, Yokohama
  255. Electric characteristics of Si3N4 films formed by directly radical nitridation on Si (110) and Si (100) surfaces, M. Higuchi, T. Aratani, T. Hamada, A. Teramoto, T. Hattori, S. Sugawa, T. Ohmi, S. Shinagawa, H. Nohira, E. Ikenaga, and K. Kobayashi, International Conference on Solid State Devices and Materials, 2006/09/12, Without Invitation, English, The Japan Society of Applied Physics, Yokohama
  256. Formation of Metal-Ferroelectric-Insulator-Si Structure Device with Large Memory Window by Supplying Ion Bombardment Energy in Rf-Sputtering Plasma, I. Takahashi, T. Isogai, K. Azumi, A. Teramoto, S. Sugawa, and T. Ohmi, 15th International Symposium on the Applications of Ferroelectrics, 2006/07/30, Without Invitation, English, IEEE, Sunset Beach
  257. Accurate Extraction of Conduction Parameters in MOSFETs on Si(110) surface, P. Gaubert, A. Teramoto, T. Hamada, T. Suwa, and T. Ohmi, 8th International Conference on the Physics of Semiconductors,, 2006/07/24, Without Invitation, English, IEEE, Shanghai
  258. The Dependence of Remaining Carbon in the Electrical Property of the Gate Insulator Film on SiC at Low Temperature Insulator Formation, K. Tanaka, H. Tanaka, A. Teramoto, S. Sugawa, and T. Ohmi, Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, 2006/07, Without Invitation, English, IEICE The Institute of Electronics and Information Engineers (IEIE) of Korea, Sendai
  259. The dependence of the intermediate nitridation states density at Si3N4/Si interface on surface Si atoms density, M. Higuchi, S. Shinagawa, A. Teramoto, H. Nohira, T. Hattori, E. Ikenaga, S. Sugawa, and T. Ohmi, Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, 2006/07, Without Invitation, English, IEICE The Institute of Electronics and Information Engineers (IEIE) of Korea, Sendai
  260. High Quality Gate Insulator Film Formation on SiC using by Microwave-Excited High-Density Plasma, K. Tanaka, H. Tanaka, A. Teramoto, S. Sugawa, and T. Ohmi, 14th Workshop on Dielectrics in Microelectronics, 2006/06/26, Without Invitation, English, CNR Institute for Microelectronics and Microsystems, Catania
  261. Accurate Circuit Performance Prediction Model and Lifetime Prediction Method of NBT Stressed Devices for Highly Reliable ULSI Circuits, R. Kuroda, K. Watanabe, A. Teramoto, M. Mifuji, T. Yamaha, S. Sugawa, and T. Ohmi, IEEE International Conference on Integrated Circuit Design and Technology, 2006/05/24, With Invitation, English, IEEE, Padova
  262. Accurate circuit performance prediction model and lifetime prediction method of nbt stressed devices for highly reliable ulsi circuits, R. Kuroda, K. Watanabe, A. Teramoto, M. Mifuji, T. Yamaha, S. Sugawa, and T. Ohmi, International Electron Devices Meeting, 2005/12/05, Without Invitation, English, IEEE, Washington D. C.
  263. Statistical evaluation of very low gate leakage current for bit error evaluation in Flash Memory, T. Suwa, S. Sugawa, H. Takahashi, A. Teramoto, and T. Ohmi, he 16th Symposium of The Materials Research Society of Japan, 2005/12, Without Invitation, English, Material Research Society of Japan, Tokyo
  264. Development of NBTI Lifetime Prediction Method and Evaluation Method using Hole Injection Technique, Akinobu Teramoto, Kazufumi Watanabe, Rihito Kuroda, Michihiko Mifuji, Takahisa Yamaha, Shigetoshi Sugawa, Tadahiro Ohmi, IEICE, 2005/11/25, Without Invitation, Japanese, IEICE, Osaka
  265. Suppression of Surface Micro-Roughness of Silicon Wafer by Addition of Alcohol into Ultra Pure Water for Rinsing Process, M. Yamamoto, K. Nii, H. Morinaga, A. Teramoto, and T. Ohmi, The 208th ECS Meeting, 2005/10/16, Without Invitation, English, The Electrochemical Society, Los Angeles
  266. New NBTI Lifetime Prediction Method for Ultra Thin SiO2 Films, K. Watanabe, R. Kuroda, A. Teramoto, S. Sugawa, and T. Ohmi, The 208th ECS Meeting, 2005/10/16, Without Invitation, English, The Electrochemical Society, Los Angeles
  267. The effect of oxygen concentration in cleaning process, N. Mizutani, H. Morinaga, A. Teramoto, and T. Ohmi, The 208th ECS Meeting, 2005/10/16, Without Invitation, English, The Electrochemical Society, Los Angeles
  268. High resolution X-ray photoelectron spectroscopy study on Si3N4/Si interface structures and its correlation with hysteresis in C-V curves, M. Higuchi, A. Teramoto, M. Komura, S. Shinagawa, E. Ikenaga, H. Nohira, K. Kobayashi, T. Hattori, S. Sugawa, and T. Ohmi, The 208th ECS Meeting, 2005/10/16, Without Invitation, English, The Electrochemical Society, Los Angeles
  269. High resolution X-ray photoelectron spectroscopy study on Si_3N_4/Si interface structures and its correlation electrical properties by NH^* direct nitridation process, M. Higuchi, M. Komura, A. Teramoto, S. Shinagawa, E. Ikenaga, K. Kobayashi, H. Nohira, S. Sugawa, T. Hattori, T. Ohmi, IEICE, 2005/10/06, Without Invitation, Japanese, IEICE, Sendai
  270. EOT Measurement by LC Resonance Method for Ultra Thin Gate Dielectrics, Rihito, Kuroda, Akinobu Teramoto, Masanori Komura, Kazufumi Watanabe, Shigetoshi Sugawa, Tadahiro Ohmi, IEICE, 2005/10/06, Without Invitation, Japanese, IEICE, Sendai
  271. Fabrication of ultra clean silicon surface, K. Kawase, H. Umeda, M. Inoue, T. Suwa, M. Higuchi, A. Teramoto, S. Sugawa, T. Ohmi, IEICE, 2005/10/06, Without Invitation, Japanese, IEICE, Sendai
  272. Suppression of the low frequency noise level in (100) and (110) oriented silicon p-MOSFETs induced by an alkali-free cleaning process, P. Gaubert, A. Teramoto, T. Hamada, M. Yamamoto, and T. Ohmi, IEICE Technical Committee on Silicon Device and Materials, 2005/10/06, Without Invitation, English, IEICE, Sendai
  273. Impact of interface micro-roughness on low frequency noise in (110) and (100) pMOSFETs, P. Gaubert, A. Teramoto, T. Hamada, M. Yamamoto, K. Nii, H. Akahori, K. Kotani, and T. Ohmi, 8th International Conference on Noise and Fluctuations,, 2005/09/19, Without Invitation, English, IEEE, Salamanca
  274. Study of the Metal-Ferroelectric-Insulator-Si Structure Device Formation by Controlling Properties of High Frequency and Microwave Excited Plasma, I. Takahashi, H. Sakurai, T. Isogai, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2005/09/12, Without Invitation, English, The Japan Society of Applied Physics, Kobe
  275. Damage-Free Microwave-Excited Plasma Contact Hole Etching without Carrier Deactivation at the Interface between Silicide and Heavily-Doped Si, T. Goto, M. Terasaki, H. Asahara, H. Nakazawa, A. Inokuchi, J. Yamanaka, A. Teramoto, M. Hirayama, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2005/09/12, Without Invitation, English, The Japan Society of Applied Physics, Kobe
  276. Impact of The Improved High Performance Si(110) Oriented MOSFETs by Using Accumulation-Mode Fully Depleted SOI Devices, W. Cheng, A. Teramoto, M. Hirayama, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2005/09/12, Without Invitation, English, The Japan Society of Applied Physics, Kobe
  277. Geometry and Bias Dependency of Low-Frequency Random Telegraph Signal and 1/F Noise Levels in MOSFETs, M. Toita, L. K. J. Vandamme, S. Sugawa, A. Teramoto, and T. Ohmi, 20th Annual Meeting of Japanese Association for Science, Art and Technology of Fluctuations, 2005/09, Without Invitation, English, Tokyo
  278. Reduction of 1/f noise in Si(110) nad (110) surface MOSFET using a new clearning technology, P. Gaubert, A. Teramoto, K. Kotani, and T. Ohmi, 20th Annual Meeting of Japanese Association for Science, Art and Technology of Fluctuations, 2005/09, Without Invitation, English, Tokyo
  279. Impact of High Performance Accumulation-Mode Fully Depleted SOI MOSFETs, W. Cheng, A. Teramoto, M. Hirayama, S. Sugawa, and T. Ohmi, Asia-Pacific Workshop on fundamentals and Applications of Advanced Semiconductor Devices, 2005/06, Without Invitation, English, The Institute of Electronics, Information and Communication Engineers (IEICE-ES) The Institute of Electronics and Information Engineers (IEIE), Seoul
  280. EOT measurement for ultra-thin gate dielectrics using LC resonance circuit, A. Teramoto, M. Komura, R. Kuroda, K. Watanabe, S. Sugawa, and T. Ohmi, nternational Conference on Microelectronic Test Structures, 2005/04/04, Without Invitation, English, IEEE, Leuven
  281. High Current Drivability MOSFET Fabricated on Si(110) Surface, A. Teramoto and T. Ohmi, MRS Spring Meeting, 2005/03/28, With Invitation, English, Material Research Society, San Francisco
  282. Quantum Chemical Study on Chemical Reactivity of Silicon Surface, K. Chiba, H. Tsuboi, M. Koyama, M. Kubo, K. Nii, A. Teramoto, T. Ohmi, A Miyamoto , IEICE, 2004/10/15, Without Invitation, Japanese, IEICE, Sendai
  283. ontrol of Native Oxide Growth on Silicon Surface, Hiroshi Akahori, Keiichi Nii, Kazumi Tsukamoto, Akinobu Teramoto, Tadahiro Ohmi, IEICE, 2004/10/15, Without Invitation, Japanese, IEICE, Sendai
  284. Control of nitrogen depth profile and chemical bonding state in radical nitrided silicon oxide film, K. Kawase, H. Umeda, M. Inoue, T. Suwa, M. Higuchi, M. Komura, A. Teramoto, T. Ohmi, IEICE, 2004/10/14, Without Invitation, Japanese, IEICE, Sendai
  285. Improvement of Ferroelectric STN Thin Film Properties by Oxygen Radical Treatment, T. Isogai, I. Takahashi, H. Sakurai, T. Goto, M. Hirayama, A. Teramoto, S. Sugawa, T. Ohmi, IEICE, 2004/10/14, Without Invitation, Japanese, IEICE, Sendai
  286. Suppression of Surface Micro-Rouhness on Si(110), K. Nii, M. Yamamoto, A. Teramoto, and T. Ohmi, 206th ECS Meeting, 2004/10/03, Without Invitation, English, The Electrochemical Society, Honolulu
  287. The Thermal Degradation Prevention of Fluorocarbon Material for Interlayer Dielectric Film, A. Hidaka, S. Yamashita, M. Kitano, A. Teramoto, Y. Shirai, and T. Ohmi, 206th ECS Meeting, 2004/10/03, Without Invitation, English, The Electrochemical Society, Honolulu
  288. High Quality Plasma Processing using Microwave Excited Plasma System with Xenon Gas, Y. Shirai, A. Teramoto, M. Hirayama, T. Ohmi, H. Hasegawa, Y. Ishihara, T. Satoh, and M. Yamawaki, International Symposium on Semiconductor Manufacturing, 2004/09/27, Without Invitation, English, IEEE, Tokyo
  289. A Large-Signal MOSFET Model Based on Transient Carrier Response for RF Circuits, K. Watanabe, K. Kotani, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2004/09/14, Without Invitation, English, The Japan Society of Applied Physics, Tokyo
  290. MFIS-structure Memory Device with High Quality Ferroelectric Sr2 (Ta1-xNbx)2 O7 Formed by Physical Vapor Deposition and Oxygen Radical Treatment by Oxygen Assisted Layer by Layer(ROALL) deposition, H. Sakurai, I. Takahashi, T. Isogai, K. Funaiwa, T. Tsunoda, T. Goto, M. Hirayama, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2004/09/14, Without Invitation, English, The Japan Society of Applied Physics, Tokyo
  291. Control of nitrogen profile in radical nitridation of SiO2 films, K. Kawase, H. Umeda, M. Inoue, S. Tsujikawa, Y. Akamatsu, A. Teramoto, and T. Ohmi, International Conference on Solid State Devices and Materials, 2004/09/14, Without Invitation, English, The Japan Society of Applied Physics, TOきょ
  292. Accurate Temperature Drift model of MOSFETs Mobility for Analog Circuits, K. Watanabe, T. Hamada, K. Kotani, A. Teramoto, S. Sugawa, and T. Ohmi, Simulation of Semiconductor Processes and Devices, 2004/09/02, Without Invitation, English, IEEE, Munich
  293. XPS study of radical nitrided silicon oxide film, K. Kawase, H. Umeda, M. Inoue, S Tsujikawa, Y. Akamatsu, A. Teramoto, T. Ohmi, IEICE SDM, 2004/06/22, Without Invitation, Japanese, IEICE, Tokyo
  294. Sub-Micron MOSFETs Technology Characterization by Low-Frequency Noise, M. Toita, S. Sugawa, A. Teramoto, and T. Ohmi, 3rd European Microelectronics and Packaging Symposium, 2004/06/16, Without Invitation, English, International Microelectronics and Packaging Society, Prague
  295. High Performance Low Noise CMOS Fabricated on Flattened (110) oriented Si Substrate, T. Hamada, A. Teramoto, H. Akahori, K. Nii, T. Suwa, M. Hirayama, and T. Ohmi, Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices, 2004/06, Without Invitation, English, The Institute of Electronics, Information and Communication Engineers The Institute of Electronics and Information Engineers, Nagasaki
  296. Atomic Order Flattening and Hydrogen Termination of Si(110) Surface , H. Akahori K. Nii A. Teramoto T. Ohmi , 205th ECS Meeting, 2004/05/10, Without Invitation, English, The Electrochemical Society, San Antonio
  297. 1/f noise degradation caused by Fowler-Nordheim tunneling stress in MOSFETs, M. Toita, S. Sugawa, A. Teramoto, T. Akaboshi, H. Imai, and T. Ohmi, IEEE International Reliability Physics Symposium, 2004/03/30, Without Invitation, English, IEEE, Dallas
  298. Low Noise Balanced-CMOS Technology Formed on Si(110) Surface, Akinobu Teramoto, Tatsufumi Hamada, Hiroshi Akahori, Keiichi Nii, Koji Kotani, Tadahiro Ohmi, IEICE SDM, 2004/01/16, With Invitation, Japanese, IEICE, Tokyo
  299. Low Noise Balanced-CMOS on Si(110) Surface for Analog/Digital Mixed Signal Circuits, A. Teramoto, T. Hamada, H. Akahori, K. Nii, T. Suwa, K. Kotani, M. Hirayama, S. Sugawa,T. Ohmi, International Electron Device Metting, 2003/12/08, Without Invitation, IEEE, Washington D.C.
  300. Electrical Characteristics of MOSFET on Flattened (110) oriented Si substrate, Tatsfumi Hamada, Hiroshi Akahori, Keiichi Nii, Tomoyuki Suwa, Masaki Hirayama, Akinobu Teramoto, Tadahiro Ohmi, IEICE SDM, 2003/10/21, Without Invitation, Japanese, IEICE, Sendai
  301. Flattening of Silicon(11O) surface, Hiroshi Akahori, Keiichi Nii, Akinobu Teramoto, Masaki Hirayama, Tadahiro Ohmi, IEICE SDM, 2003/10/21, Without Invitation, Japanese, IEICE, Sendai
  302. A Hydrogen Termination Process on Silicon Surface as investigated by Computational Chemistry, H. Iga, K. Chiba, S. Uchida, Y. Sasaki, R. Endou, K. Sugawara, A. Chida, J. Matsuda, N. Isoda, K. Sasada, T. Yokosuka, A. Endou, M. Kubo, A. Imamura, K. Nii, A. Teramoto, T. Ohmi, A. Miyamoto, IEICE SDM, 2003/10/21, Without Invitation, Japanese, IEICE, Sendai
  303. High Performance Poly-Si TFT with Thin Gate Oxide Film Grown by Oxygen Radical, K. Ishii, F. Imaizumi, T. Hayashi, A. Teramoto, M. Hirayama, S. Sugawa, T. Ohmi, IEICE SDM, 2003/10/20, Without Invitation, Japanese, IEICE, Sendai
  304. Very High Reliability of Ultrathin Silicon Nitride Gate Dielectric Film for sub-1OOnm Generation, M. Komura, M. Higuchi, W. Cheng, I Ohshima, A. Teramoto, M. Hirayama, S. Sugawa, T.Ohmi, IEICE SDM, 2003/10/20, With Invitation, Japanese, IEICE, Sendai
  305. High Quality Silicon Nitride Film Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition with Dual Gas Shower Head, H. Tanaka, C. Zhong, Y. Hayakawa, M. Hirayama, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2003/09/16, Without Invitation, Japanese, The Japan Society of Applied Physics, Tokyo
  306. A Low Dielectric Constant Sr2(Ta1-x,Nbx)2O7 Thin Film Controlling the Crystal Orientation on IrO2 Substrate for One Transistor Type Ferroelectric Memory Device, I. Takahashi, H. Sakurai, A. Yamada, T. Goto, M. Hirayama, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2003/09/16, Without Invitation, English, The Japan Society of Applied Physics, Tokyo
  307. Very High Reliability of Ultrathin Silicon Nitride Gate Dielectric Film for Sub-100nm Generation, M. Komura, M. Higuchi, W. Cheng, I. Ohshima, A. Teramoto, M. Hirayama, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2003/09/16, Without Invitation, English, The Japan Society of Applied Physics, Tokyo
  308. High Performance Poly-Si Device with Thin Gate Oxide Film Grown by Plasma Oxidation Technology, F. Imaizumi, T. Hayashi, K. Ishii, A. Teramoto, M. Hirayama, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2003/09/16, Without Invitation, English, The Japan Society of Applied Physics, Tokyo
  309. High-Speed Damage-Free Contact Hole Etching using Dual Shower Head Microwave-Excited High-Density Plasma Equipment, T. Goto, H. Yamauchi, T. Kato, A. Teramoto, M. Hirayama, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2003/09/16, Without Invitation, English, The Japan Society of Applied Physics, Tokyo
  310. Atomic Order Flattening of Hydrogen-Terminated Si(110) substrate For Next Generation ULSI Devices, H. Akahori, K. Nii, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2003/09/16, Without Invitation, English, The Japan Society of Applied Physics, Tokyo
  311. Very High Integrity Thin Film Formations at Very Low Temperatures, T. Ohmi, A. Teramoto, H. Tanaka, and M. Hirayama, MRS Spring Meeting, 2003/04/24, With Invitation, English, Material Research Society, San Francisco
  312. Influence of the noble gas atom contained in the plasma oxides and nitrides on the electrical properties, M. Higuchi, T. Suwa, I OhshimaW. Cheng, A. Teramoto, M. Hirayama, S. Sugawa, T. Ohmi, IEICE SDM, 2002/10/28, Without Invitation, Japanese, IEICE, Sendai
  313. Reduction Effect of Flicker Noise by Atomic Scale Flattening Silicon Surface, K. Tanaka, K. Watanabe, H. Ishino, S. Sugawa, A. Teramoto, M. Hirayama, T. Ohmi, IEICE SDM, 2002/10/28, Without Invitation, Japanese, IEICE, Sendai
  314. Oxygen Radical Annealing Applied to Ferroelectric Thin Films, I. Takahashi, H. Sakurai, A. Yamada, K. Funaiwa, K. Hirai, S. Urabe, T. Goto, M. Hirayama, A. Teramoto, S. Sugawa, and T. Ohmi, Fourth International Symposium on Control of Semiconductor Interfaces, 2002/10, Without Invitation, English, Japan Society for the Promotion of Science, Karuizawa
  315. Highly Reliable Silicon Nitride Gate Dielectrics Grown at Low Temperature by Microwave-Excited High-Density Plasma, I. Ohshima, W. Cheng, M. Hirayama, A. Teramoto, H. Shimada, Y. Ono, S. Sugawa, and T. Ohmi, Fourth International Symposium on Control of Semiconductor Interfaces, 2002/10, Without Invitation, English, Japan Society for the Promotion of Science, Karuizawa
  316. A Ferroelectric Sr2(Ta1-x, Nbx)2O7 with a Low Dielectric Constant by Plasma PVD and Oxygen Radical , I. Takahashi, H. Sakurai, A. Yamada, K. Funaiwa, K. Hirai, S. Urabe, T. Goto, M. Hirayama, A. Teramoto, S. Sugawa, and T. Ohmi, International Conference on Solid State Devices and Materials, 2002/09/17, Without Invitation, English, The Japan Society of Applied Physics, Nagoya
  317. A Technology of Reducing Flicker Noise for ULSI Applications, K. Tanaka, K. Watanabe, H. Ishino, S. Sugawa, A. Teramoto, M. Hirayama, and T. Ohmi, International Conference on Solid State Devices and Materials, 2002/09/17, Without Invitation, English, The Japan Society of Applied Physics, Nagoya
  318. Improving Reliability of Ultra Thin Silicon Nitride Gate Dielectric Film Directly Grown at Low Temperature by Microwave-Excited High-Density Plasma, W. Cheng, I. Ohshima, H. Shimada, Y. Ono, M. Hirayama, A. Teramoto, S. Sugawa, T. Ohmi, IEICE SDM, 2002/06/20, Without Invitation, Japanese, IEICE, Higashihiroshima
  319. Influence of Organic Contamination on Electrical Property of Gate Oxides, M. Inoue, T. Takahashi, A. Teramoto, Y. Horie, T. Kaneoka, Y. Ohno, E. Hara, J. Kobayashi, IEICE SDM, 2001/10/09, Without Invitation, Japanese, IEICE, Sendai
  320. Saturation Phenomenon of Stress-Induced Gate Leakage Current, S. Ueno, T. Kuroi, A. Teramoto, H. Umeda, T. Eimori, and Y. Inoue, International Conference on Solid State Devices and Materials, 2001/09/26, Without Invitation, English, The Japan Society of Applied Physics, Tokyo
  321. Oxide thickness dependence of nitridation effects on TDDB characteristics, M. K. Mazumder, A. Teramoto, J. Komori, and Y. Mashiko, International Conference on Microelectronic Test Structures, 2001/03/19, Without Invitation, English, IEEE, Kobe
  322. 80 nm CMOSFET technology using double offset-implanted source/drain extension and low temperature SiN process, H. Sayama, Y. Nishida, H. Oda, J. Tsuchimoto, H. Umeda, A. Teramoto, K. Eikyu, Y. Inoue, and M. Inuishi, International Electron Devices Meeting, 2000/12/10, Without Invitation, English, IEEE, San Francisco
  323. Breakdown Mechanism of Thin Gate Oxide Films, A. Teramoto, M. Inoue, H. Umeda, Y. Ohno, A. Nishimoto, IEICE SDM, 2000/10/19, Without Invitation, Japanese, IEICE, Sendai
  324. Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors, K. Eikyu, H. Takashino, M. Kidera, A. Teramoto, H. Umeda, K. Ishikawa, N. Kotani, and M. Inuishi, International Conference on Simulation of Semiconductor Processes and Devices, 2000/09/06, Without Invitation, English, IEEE, Seattle
  325. Electric Characteristics of Gate Dielectrics formed by using an RTA, H. Umeda, A. Teramoto, Y. Ohno, A. Shigetomi, IEICE SDM, 1999/09/28, Without Invitation, Japanese, IEICE, Sendai
  326. Electric-Field Dependence of Gate Oxide Life Time, M. Inoue, A. Teramoto, H. Umeda, Y. Ohno, A. Shigetomi, IEICE SDM, 1999/09/28, Without Invitation, Japanese, IEICE, Sendai
  327. Study of oxide breakdown under very low electric field, A. Teramoto, H. Umeda, K. Azamawari, K. Kobayashi, K. Shiga, J. Komori, Y. Ohno, and H. Miyoshi, IEEE International Reliability Physics Symposium, 1999/03/23, Without Invitation, English, IEEE, San Diego
  328. Characterization of Extrinsic Oxide Breakdown on Thin Dielectric Oxide, K. Shiga, J. Komori, M. Katsumata, A. Teramoto, Y. Mashiko, IEICE SDM, 1998/11/20, Without Invitation, Japanese, IEICE
  329. Gate Oxide Formation at Low Temperature using UV-O_2 Oxidation, A. Teramoto, Y. Ohno, H. Miyoshi, IEICE SDM, 1998/07/28, Without Invitation, Japanese, IEICE, Tokyo
  330. A new test structure for evaluation of extrinsic oxide breakdown, K. Shiga, J. Komori, M. Katsumata, A. Teramoto, and M. Sekine, International Conference on Microelectronic Test Structures, 1998/03/20, Without Invitation, English, IEEE, Kanazawa
  331. Degradation of the characteristics of p+ poly MOS capacitors with NO nitrided gate oxide due to post nitrogen annealing, M. K. Mazumder, A. Teramoto, K. Kobayashi, M. Sekine, S. Kawazu, and H. Koyama, IEEE International Integrated Reliability Workshop , 1997/10/13, Without Invitation, English, IEEE, Lake Tahoe
  332. Highly Reliable SiO2 films Formed by UV-O2 Oxidation, A. Teramoto, K. Konayashi, Y. Ohmo, and M. Hirayama, International Conference on Solid State Devices and Materials, 1997/09/16, Without Invitation, English, The Japan Society of Applied Physics, Hamamatsu
  333. High Performance 0.2 mm Dual Gate CMOS by Suppression of Transient-Enhanced-Diffusion Using Rapid Thermal Annealing Technolohies, Y. Nishida, H. sayama, S. Shimizu, T. Kuroi, A. Furukawa, A. Teramoto, T. Uchida, Y. Inoue, and T. Nishimura, International Conference on Solid State Devices and Materials, 1997/09/16, Without Invitation, English, The Japan Society of Applied Physics, Hamamatsu
  334. Temperature dependence of TDDB characteristics of thin SiO2 film for flash memory, M. Katsumata, A. Teramoto, K. Kobayashi, M. K. Mazumder, R. Sekine, and H. Koyama, 6th International Symposium on Physical and Failure Analysis of Integrated Circuits, 1997/07/22, Without Invitation, English, IEEE, Singapore
  335. Channel Profile Control Based On Transient-enhanced-diffusion Suppression By RTA For 0.18 mm Single Gate CMOS, A. Furukawa, A. Teramoto, S. Shimizu, Y. Abe, and Y. Tokuda, Symposium on VLSI Technology,, 1997/06/12, Without Invitation, English, IEEE The Japan Society of Applied Physics, Kyoto
  336. Dopant redistribution during gate oxidation including transient enhanced diffusion in oxidizing ambient, T. Uchida, K. Eikyu, M. Fujinaga, A. Teramoto, and H. Miyoshi, International Electron Devices Meeting, 1996/12/08, Without Invitation, English, IEEE, San Francisco
  337. High reliability of nanometer-range N2O-nitrided oxides due to suppressing hole injection, K. Kobayashi, A. Teramoto, T. Nakamura, H. Watanabe, H. Kurokawa, Y. Matsui, and M. Hirayama, International Electron Devices Meeting, 1996/12/08, Without Invitation, English, IEEE, San Francisco
  338. Effect of N2O or NO annealing of wet oxide at different times on TDDB characteristics, M. K. Mazumder, A. Teramoto, K. Kobayashi, M. Katsumata, Y. Mashiko, M. Sekine, H. Koyama, and A. Yasuoka, IEEE International Integrated Reliability Workshop, 1996/10/20, Without Invitation, English, IEEE, Lake Tahoe
  339. Sub-quarter-micron dual gate CMOSFETs with ultra-thin gate oxide of 2 nm, T. Kuroi, S. Shimizu, S. Ogino, A. Teramoto, M. Shirahata, Y. Okumura, M. Inuishi, and H. Miyoshi, Symposium on VLSI Technology, 1996/06/13, Without Invitation, English, IEEE The Japan Society of Applied Physics, Honolulu
  340. Excess currents induced by hot-hole injection and F-N stress in thin SiO2 films, A. Teramoto, K. Kobayashi, Y. Matsui, M. Hirayama, and A. Yasuoka, IEEE International Reliability Physics Symposium, 1996/04/30, Without Invitation, English, IEEE, Dallas
  341. Clarification of Nitridation Effect on Oxinitridation Methods, T. Kuroi, S. Shirahata, Y. Okumura, S. Shimizu, A. Teramoto, M. Anma, M. Inuishi, and T. Hirao, International Conference on Solid State Devices and Materials, 1995/08/21, Without Invitation, English, The Japan Society of Applied Physics, Osaka
  342. Electron traps and excess current induced by hot-hole injection into thin SiO2 films, K. Kobayashi, A. Teramoto, and M. Hirayama, International Reliability Physics Symposium , 1995/04/04, Without Invitation, English, IEEE, Las Vegas
  343. Area and thickness dependence of the TDDB characteristics of silicon dioxides, A. Teramoto, K. Kobayashi, M. Hirayama, IEICE SDM, 1994/07/25, Without Invitation, Japanese, IEICE
  344. Pre-oxide-Controlled Oxidation for Very Thin Gate Oxide, K. Makihara, A. Teramoto, K. Nakamura, M. Morita, and T. Ohmi, International Conference on Solid State Devices and Materials, 1992/08/26, Without Invitation, English, The Japan Society of Applied Physics, Tsukuba
  345. High Reliability of Ultraclean Oxide Films, M. Morita, K. Nakamura, A. Teramoto, K. Makihara, and T. Ohmi, 183th Electrochemical Society Meeting, 1992/05, Without Invitation, English, The Electrochemical Society, Honolulu
  346. Effect of Silicon Wafer In Situ Cleaning on the Chemical Structure of Ultrathin Silicon Oxide Film, N. Terada, H. Ogawa, K. Moriki, A. Teramoto, K. Makihara, M. Morita, T. Ohmi, and T. Hattori, International Conference on Solid State Devices and Materials, 1991/08/27, Without Invitation, English, The Japan Society of Applied Physics, Yokohama
  347. Effects of Si Wafer Surface Micro-Roughness on Electrical Properties of Very-Thin Gate Oxide Films, M. Morita, A. Teramoto, K. Makihara, T. Ohmi, Y. Nakazato, A. Uchiyama, and T. Abe, 179th Electrochemical Society Meeting, 1991/05, Without Invitation, English, The Electrochemical Society, Washington D.C.
  348. Native Oxide Growth on Silicon Surface in Wet Ambient, M. Morita, T. Ohmi, E. Hasegawa, and A. Teramoto, International Conference of Solid State Device and Materials, 1990/08/22, Without Invitation, English, The Japan Society of Applied Physics, Sendai
  349. Particle Generation from Gate Valves and its Behavior, M. Morita, T. Ohmi, E. Hasegawa, A. Teramoto, and S. Kawajiri, American Association for Aerosol Research, 1990/06, Without Invitation, English, American Association for Aerosol Research, Philadelphia
  350. Measurement of gas concentration distribution in vacuum chamber using high SN ratio absorption imaging, Keigo Takahashi, Yhang Ricardo Sipauba Carvalho da Silva, Naoki Numao, Rihito Kuroda, Yasuyuki Fujihara, Maasa Murata, Hidekazu Ishii, Tatsuo Morimoto, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, The Institute of Image Information and Television Engineers, 2019/06/18, Without Invitation, Japanese, The Institute of Image Information and Television Engineers, Tokyo
  351. Gas concentration distribution measurement in semiconductor process chamber using a high SNR CMOS absorption image sensor, K. Takahashi, Yhang Ricardo Sipauba Cavalho da Silva, R. Kuroda, Y. Fujiwara, M. Murata, H. Ishii, T. Morimoto, T. SUwa, A. Teramoto, S. Sugawa, IEICE SDM, 2019/10/24, Without Invitation, Japanese, IEICE, Sendai
  352. Resistance Measurement Platform for Statistical Evaluation of Emerging Memory Materials with High Accuracy, Takeru Maeda, Yuya Omura, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa, IEICE SDM, 2019/10/24, Without Invitation, Japanese, IEICE, Sendai
  353. Influence of Silicon Wafer Surface Roughness on Semiconductor Device Characteristics, K. Mori, S. Samata, N. Mitsugi, A. Teramoto, R. Kuroda, T. Suwa, K. Hashimoto, and S. Sugawa, International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY, 2019/11/18, Without Invitation, English, The Japan Society of Applied Physics, Tokyo
  354. Dielectric breakdown of MgO in MRAM, A. Teramoto, J. Tsuchimoto, H. Park, M. Hayashi, K. Tsunekawa, T. Suwa, R. Kuroda, and S. Sugawa, Special MRAM poster session IEDM, 2019/12/11, Without Invitation, English, IEEE, San Francisco
  355. Plasma Resistance of Sintered Yttrium Oxyfluoride (YOF) with Various Y, O, and F Composition Ratios, T. Goto, Y. Shiba, A. Teramoto, Y. Kishi, and S. Sugawa, AVS 66th International Symposium, 2010/02/01, Without Invitation, English, AVS, Columbus,OH, USA
  356. Operation Principle and Structure of normally-off Floating Gate GaN HEMT with Injection Gate, Kenshi Nagumo, Daiki Kimoto, Tomoyuki Suwa, Akinobu Teramoto, Riichiro Shirota, Shinichiro Tskatani, Rihito Kuroda, Shigetoshi Sugawa, IEICE Technical Committee on Electron Devices, 2020/01/31, Without Invitation, Japanese, IEICE, Tokyo, We report a GaN HEMT (High Electron Mobility Transistor) with floating gate, that has an additional injection gate for charge injection as a structure to achieve normally-off. The introduction of the injection gate not only avoids damage to the gate insulation film at the period of charge injection, which was a problem of conventional HEMT devices with floating gate, but also suppresses threshold voltage-variation by the charge injection. We show the usefulness of this structure by circuit modeling of this new structure and structural design by numerical calculation.
  357. Large-Scale Evaluation of MIM Devices Using High-Precision Current Measurement Array Test Circuit, Hayato Suzuki, Hyeonwoo Park, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Shigetoshi Sugawa, The 67th JSAP Spring Meeting, 2020/02/28, Without Invitation, Japanese, The Japan Society of Applied Physics, Tokyo

Awards

  1. 2014/09/17, Outstanding Paper Award, The Japan Society of Applied Physics, Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species

Patented

  1. US9875899, Semiconductor transistor
  2. US10043654, Method for rinsing compound semiconductor, solution for rinsing compound semiconductor containing gallium as constituent element, method for fabricating compound semiconductor device, method for fabricating gallium nitride substrate, and gallium nitride substrate
  3. US9543191, Wiring structure having interlayer insulating film and wiring line without a barrier layer between
  4. US9299844, Accumulation-mode MOSFET and driving method thereof
  5. US9230799, Method for fabricating semiconductor device and the semiconductor device
  6. US9157681, Surface treatment method for atomically flattening a silicon wafer and heat treatment apparatus
  7. US9153658, Semiconductor device and method of manufacturing the same
  8. US8,999,788, Manufacturing method of GaN-based semiconductor device and semiconductor device
  9. US8906796, Method of producing semiconductor transistor
  10. US8841545, Solar cell wherein solar photovolatic thin film is directly formed on base
  11. US8716114, Semiconductor device manufacturing method and semiconductor device
  12. US8664909, Inverter unit, integrated circuit chip, and vehicle drive apparatus
  13. US8648393, Transistor and semiconductor device
  14. US8643106, Semiconductor device
  15. US8633395, Multilayer wiring board
  16. US8575023, Contact formation method, semiconductor device manufacturing method, and semiconductor device
  17. US8497214, Semiconductor device manufacturing method
  18. US8492879, Semiconductor substrate and semiconductor device
  19. US8468719, Silicon carbide substrate, semiconductor device, wiring substrate, and silicon carbide manufacturing method
  20. US8405343, Inverter unit, integrated circuit chip, and vehicle drive apparatus
  21. US8399862, Ion implanting apparatus and ion implanting method
  22. US8362567, Semiconductor device
  23. US8314449, MIS transistor and CMOS transistor
  24. US8328928, Metal nanoink and process for producing the metal nanoink, and die bonding method and die bonding apparatus using the metal nanoink
  25. US8217270, Multilayer circuit board and electronic device
  26. US8198195, Plasma processing method and plasma processing apparatus
  27. US8183670, Semiconductor device and method of manufacturing the same
  28. US8138527, Transistor and semiconductor device
  29. JPUS8134376, Method of measuring electronic device and measuring apparatus
  30. US8093918, Electronic device identifying method and electronic device comprising identification means
  31. US8067809, Semiconductor storage device including a gate insulating film with a favorable nitrogen concentration profile and method for manufacturing the same
  32. UA8895410, Method of manufacturing semiconductor device and semiconductor manufacturing apparatus
  33. US8030182, Semiconductor device manufacturing method and semiconductor manufacturing apparatus
  34. US7994063, Method for manufacturing semiconductor device and method for cleaning semiconductor substrate
  35. US7968470, Plasma nitriding method, method for manufacturing semiconductor device and plasma processing apparatus
  36. US7975901, Bonding apparatus and wire bonding method
  37. US7965097, Test circuit, wafer, measuring apparatus, measuring method, device manufacturing method and display apparatus
  38. US7960937, Inverter unit, integrated circuit chip, and vehicle drive apparatus
  39. US7928518, P-channel power MIS field effect transistor and switching circuit
  40. US7928018, Plasma processing method and method for manufacturing an electronic device
  41. US7902595, Power IC device and method of manufacturing same
  42. US7898033, Semiconductor device
  43. US7893537, Semiconductor device
  44. US7887385, Organic EL light emitting element, manufacturing method thereof, and display device
  45. US7863925, Test circuit, wafer, measuring apparatus, and measuring method
  46. US7863713, Semiconductor device
  47. US7848828, Method and apparatus for managing manufacturing equipment, method for manufacturing device thereby
  48. US7820558, Semiconductor device and method of producing the semiconductor device
  49. US7812595, Electronic device identifying method
  50. US7800202, Semiconductor device
  51. US7774081, Manufacturing system, manufacturing method, managing apparatus, managing method and computer readable medium
  52. US7704893, Semiconductor device, method for manufacturing semiconductor device and gas for plasma CVD
  53. US7691725, Method for manufacturing semiconductor device
  54. US7663195, P-channel power MIS field effect transistor and switching circuit
  55. US7521324, Semiconductor device and method for manufacturing the same
  56. US7449719, Semiconductor device and method of manufacturing the same
  57. US7411274, Silicon semiconductor substrate and its manufacturing method
  58. US7179746, Method of surface treatment for manufacturing semiconductor device
  59. US6756647, Semiconductor device including nitride layer
  60. US 6753233, Method of manufacturing semiconductor device, and semiconductor device having memory cell
  61. US6720601, Semiconductor device comprising a gate conductive layer with a stress mitigating film thereon
  62. US6683004, Method of manufacturing a semiconductor device, and semiconductor device manufactured thereby
  63. US6649969, Nonvolatile semiconductor device
  64. US6638803, Semiconductor device and method for manufacturing the same
  65. US6521509, Semiconductor device and method of manufacturing the same
  66. US6472700, Semiconductor device with isolation insulator, interlayer insulation film, and a sidewall coating film
  67. US6221771, Method of forming tungsten silicide film, method of fabricating semiconductor devices and semiconductor manufactured thereby

Social Activities

History as Committee Members

  1. Program committee, 2020/11/01, 2021/11/30, International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology
  2. Program committee, 2018/11/00, 2019/11/30
  3. Program Committee, 2018/11/00, 2019/11/00, The Japan Society of Applied Physics