HIDEKI GOTO

Last Updated :2024/05/07

Affiliations, Positions
Hiroshima University, Professor
E-mail
hdkgotohhiroshima-u.ac.jp
Self-introduction
Continuous demand for expanding function and increasing speed in information processing has been developing various related technologies. However, the energy consumption for the processing has been increasing, which will be a serious social problem to be solved. In the present and the past, electrons and photons are utilized for the processing and communication, respectively. We have conducted research projects on information processing converging electron-, photon- and quantum related technologies. Photon and quantum have distinct characteristics from those of electron. These lead to an epoch-making information processing platform that has characteristics of superior processing capability, high energy efficiency and environment-friendly.

Basic Information

Academic Degrees

  • Hiroshima University
  • Hiroshima University

Research Keywords

  • Spectroscopy with lasers
  • Semiconductor optical devices
  • Fabrication of novel semiconductors
  • Quantum information processing
  • Quantum photonics
  • Optical properties in semiconductor nanostructures

Educational Activity

Course in Charge

  1. 2024, Liberal Arts Education Program1, 2Term, Semiconductors connecting Hiroshima and the world
  2. 2024, Undergraduate Education, Year, Graduation Thesis
  3. 2024, Graduate Education (Master's Program) , First Semester, Seminar on Electronics A
  4. 2024, Graduate Education (Master's Program) , Second Semester, Seminar on Electronics B
  5. 2024, Graduate Education (Master's Program) , Academic Year, Academic Presentation in Electronics
  6. 2024, Graduate Education (Master's Program) , 1Term, Exercises in Electronics A
  7. 2024, Graduate Education (Master's Program) , 2Term, Exercises in Electronics A
  8. 2024, Graduate Education (Master's Program) , 3Term, Exercises in Electronics B
  9. 2024, Graduate Education (Master's Program) , 4Term, Exercises in Electronics B
  10. 2024, Graduate Education (Master's Program) , Intensive, Current Topics in Electronics B
  11. 2024, Graduate Education (Master's Program) , Academic Year, Advanced Study in Quantum Matter
  12. 2024, Graduate Education (Doctoral Program) , Academic Year, Advanced Study in Quantum Matter

Research Activities

Academic Papers

  1. Thermodynamic constraints and substrate influences on the growth of high-quality Bi2Te3 thin films by pulsed laser deposition, APPLIED PHYSICS EXPRESS, 15(6), 20220601
  2. Low-loss erbium-incorporated rare-earth oxide waveguides on Si with bound states in the continuum and the large optical signal enhancement in them, Optics Express, 29(25), 41132-41132, 20211206
  3. Thermal effect of InP/InAs nanowire lasers integrated on different optical platforms, OSA Continuum, 4(6), 1838-1838, 20210615
  4. Spin accumulation in photo-induced potential dimples generated in semiconductors, Communications Physics, 3, 11-1-7, 2020
  5. Optical frequency distribution using laser repeater stations with planar lightwave circuits,, Optics Express, 28, 9186-9197, 2020
  6. Highly sensitive transient reflection measurement in extreme ultraviolet region for tracking carrier and coherent phonon dynamics, Optics Express, 28, 1595-1602, 2020
  7. Epitaxial single-crystal rare-earth oxide in horizontal slot waveguide for silicon-based integrated active photonic devices, Optics Express, 28, 14448-14460, 2020
  8. Nanowire-based telecom-band light-emitting diodes with efficient light extraction, Jpn. J. Appl. Phys., 59, 105003-1-8, 2020
  9. Phase velocity of drifting spin wave packets in semiconductor two-dimensional electron gas, Appl. Phys. Express, 12, 013001-1-5, 2019
  10. Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature, Science Adv., 5, eaat8896-1-9, 2019
  11. Strain-induced exciton decomposition and anisotropic lifetime modulation in a GaAs micromechanical resonator, Phys. Rev. B, 99, 115315-1-6, 2019
  12. Low-temperature formation of GeSn nanodots by Sn mediation,, Jpn. J. Appl. Phys., 58, SDDG09-1-8, 2019
  13. Study on the formation mechanism of bismuth-mediated Ge nanodots fabricated by vacuum evaporation,, Jpn. J. Appl. Phys., 58, SDDG10-1-5, 2019
  14. Optical coherent transients in 167Er3+ at telecom-band wavelength, Opt. Lett., 44, 4933-4936, 2019
  15. Mid-Infrared Lasing of Single Wurtzite InAs Nanowire, Nano Lett., 9, 8059-8065, 2019
  16. Diameter-tailored telecom-band luminescence in InP/InAs heterostructure nanowires grown on InP (111)B substrate with continuously-modulated diameter from microscale to nanoscale, Nanotechnology, 29, 152202-1-12, 2018
  17. Relationship between the Fano asymmetry parameter and time-domain spectra studied by time-resolved measurement of carriers and phonons in p-type Si, Phys. Rev. B, 97, 104301-1-5, 2018
  18. Multi-petahertz electron interference in Cr:Al2O3 solid-state material, Nature Commun., 9, 1468-1-6, 2018
  19. Sub-50-as isolated extreme ultraviolet continua generated by 1.6-cycle near-infrared pulse combined with double optical gating scheme, Appl. Phys. Lett., 112, 181105-1-5, 2018
  20. Direct modulation of a single InP/InAs nanowire light-emitting diode, Appl. Phys. Lett., 112, 251106-1-5, 2018
  21. Dynamic Control of the Coupling between Dark and Bright Excitons with Vibrational Strain, Phys. Rev. Lett., 120, 267401-1-6, 2018
  22. Epitaxial growth and optical properties of Er-doped CeO2 on Si(111), Opt. Mat. Express, 8, 2843-2849, 2018
  23. Alternating InAsP/InP heterostructure nanowires grown with tertiary-butyl chloride, Nano Futures, 2, 045006-1-8, 2018
  24. Characterization of longitudinal acoustic phonons in InGaAsP multiple quantum wells by asynchronous optical sampling, Appl. Phys. Lett., 113, 201102-1-4, 2018
  25. Mechanism of concentration quenching in epitaxial (ErxSc1-x)2O3 thin layers, Opt. Mat. Express, 7, 1097-1104, 2017
  26. Effect of isotopic purification on spectral-hole narrowing in 167Er3+ hyperfine transitions, Appl. Phys. Express, 10, 042801-1-4, 2017
  27. Reduced pulse energy for frequency comb offset stabilization with a dual-pitch periodically poled lithium niobate ridge waveguide, Appl. Phys. Lett., 110, 241107-1-5, 2017
  28. Octave-spanning supercontinuum generation at telecommunications wavelengths in a precisely dispersion- and length-controlled silicon-wire waveguide with a double taper structure, Appl. Phys. Lett., 111, 021105-1-5, 2017
  29. Drift-induced enhancement of cubic Dresselhaus spin-orbit interaction in two-dimensional electron gas, Phys. Rev. Lett., 119, 187703-1-5, 2017
  30. Drift transport of helical spin coherence with tailored spin?orbit interactions, Nature Commun., 7, 10722-1-6, 2016
  31. Bias dependence of spin injection/transport properties of a perpendicularly magnetized FePt/MgO/GaAs structure, Appl. Phys. Express, 9, 043002-1-4, 2016
  32. Petahertz optical drive with wide-bandgap semiconductor, Nature Phys., 12, 741-745, 2016
  33. Ultralow-phase-noise millimetre-wave signal generator assisted with an electro-optics-modulator-based optical frequency comb, Scientific Reports, 6, 24621-1-7, 2016
  34. Dynamical observation of photo-Dember effect on semi-insulating GaAs using femtosecond core-level photoelectron spectroscopy, Appl. Phys. Express, 8, 022401-1-4, 2015
  35. Controlled 1.1-1.6 μm luminescence in gold-free multi-stacked InAs/InP heterostructure nanowires, Nanotechnology, 26, 115704-1-9, 2015
  36. Determination of phonon decay rate in p-type silicon under Fano resonance by measurement of coherent phonons, AIP Advances, 5, 097152-1-6, 2015
  37. Frequency stabilization of an Er-doped fiber laser with a collinear 2f-to-3f self-referencing interferometer, Appl. Phys. Lett., 106, 231106-1-4, 2015
  38. Bridging the Gap between the Nanometer-Scale Bottom-Up and Micrometer-Scale Top-Down Approaches for Site-Defined InP/InAs Nanowires, ACS Nano, 9, 10580-10589, 2015
  39. Cavity-less on-chip optomechanics using excitonic transitions in semiconductor heterostructures, Nature Commun., 6, 8478-1-6, 2015
  40. Growth of InP nanowires on graphene-covered Fe, Jpn. J. Appl. Phys., 53, 015504-1-6, 2014
  41. Deep-level transient spectroscopy characterization of In(Ga)As quantum dots fabricated using Bi as a surfactant, Jpn. J. Appl. Phys., 53, 06JG11-1-5, 2014
  42. Evaluation of hole-spin superposition in GaAs/AlGaAs quantum wells through time-resolved photoluminescence measurements, Appl. Phys. Lett., 104, 252426-1-4, 2014
  43. Etching effect of tertiary-butyl chloride during InP-nanowire growth, J. of Cryst. Growth, 402, 299-303, 2014
  44. MOCVD-grown compressively strained C-doped InxGa1?xAs1?ySby with high-In/Sb content for very low turn-on-voltage InP-based DHBTs, J. of Cryst. Growth, 404, 172-176, 2014
  45. Nonlinear optical spectra having characteristics of Fano interferences in coherently coupled lowest exciton biexciton states in semiconductor quantum dots, AIP Advances, 4, 107124-1-7, 2014
  46. A simple method for forming compositionally graded InxGa1?xAs1?ySby base of double-heterojunction bipolar transistors modulating CBr4-doping-precursor flow in metalorganic chemical vapor deposition, Appl. Phys. Express, 7, 114102-1-4, 2014
  47. Valley-antisymmetric potential in graphene under dynamical deformation, Phys. Rev. B, 90, 205402-1-8, 2014
  48. Characterizing inner-shell with spectral phase interferometry for direct electric-field reconstruction, Nature Commun., 5, 5599-1-6, 2014
  49. Manipulation of mobile spin coherence using magnetic-field-free electron spin resonance, Nature Phys., 9, 280-283, 2013
  50. Au-free InAs nanowires grown in In-particle-assisted vapor-liquid-solid mode: growth, structure, and electrical property, AIP Advances, 3, 052107-1-12, 2013
  51. Population dynamics in epitaxial Er2O3 thin films grown on Si(111), Appl. Phys. Lett., 102, 241918-1-4, 2013
  52. Xe K-shell X-ray generation using conical nozzle and 25 TW laser, Laser and Particle Beams, 31, 419-425, 2013
  53. Modifying exciton optical properties in quantum dots with coherent phonons induced by ultrafast optical pulses, Appl. Phys. Lett., 103, 112104-1-4, 2013
  54. Topological Raman Band in the Carbon Nanohorn, Phys. Rev. Lett., 111, 116801-1-5, 2013
  55. Direct Biexciton Creation with Two-Photon Excitation for Ideal Entangled Photon Pair Emissions in Optically Active Quantum Dots, Jpn. J. Appl. Phys., 52, 120202-1-4, 2013
  56. Proposal of Spin Complementary Field Effect Transistor, Appl. Phys. Lett., 100, 113502-1-3, 2012
  57. Flat-Top and Stacking-Fault-Free GaAs-Related Nanopillars Grown on Si Substrates, J. of Nanotechnology, 2012, 890607-1-8, 2012
  58. Vertically aligned InP nanowires grown via the self-assisted vapor-liquid-solid mode, Appl. Phys. Express, 5, 055201-1-3, 2012
  59. Spatially modulated photoluminescence properties in dynamically strained GaAs/AlAs quantum wells by surface acoustic wave, Appl. Phys. Lett., 100, 162109-1-4, 2012
  60. Charged exciton creation with two-color optical excitation method and analysis of initialization process of electron spin qubit in quantum dots, J. of Appl. Phys., 111, 123520-1-6, 2012
  61. Time-Resolved Surface Photoelectron Spectroscopy of Photoexcited Electron and Hole Dynamics on GaAs Using 92 eV Laser Harmonic Source, Jpn. J. Appl. Phys., 51, 072401-1-6, 2012
  62. VLS Growth of Alternating InAsP/InP Heterostructure Nanowires for Multiple-Quantum-Dot Structures, Nano Lett., 12, 2888-2893, 2012
  63. Dynamic control of photoluminescence polarization properties in GaAs/AlAs quantum wells by surface acoustic waves, Phys. Rev. B, 86, 035311-1-8, 2012
  64. Extremely Narrow Violet Photoluminescence Line from Ultrathin InN Single Quantum Well on Step-Free GaN Surface, Adv. Mater., 24, 4296-4300, 2012
  65. Optomechanical photoabsorption spectroscopy of exciton states in GaAs, Appl. Phys. Lett., 101, 082107-1-3, 2012
  66. Creation of charged excitons with two-color excitation method and initialization of electron spin qubit in quantum dots, Appl. Phys. Lett., 98, 032101-1-3, 2011
  67. Vibration Amplification, Damping, and Self-Oscillations in Micromechanical Resonators Induced by Optomechanical Coupling through Carrier Excitation, Phys. Rev. Lett., 106, 036801-1-4, 2011
  68. Predominant Si Doping through Au Catalyst Particles in the Vapor-Liquid-Solid Mode over the Shell Layer via the Vapor-Phase Epitaxy Mode of InAs Nanowires, J. Phys. Chem. C 2011, 115, 2923-2930, 2011
  69. Doping-type dependence of phonon dephasing dynamics in Si, Appl. Phys. Lett., 98, 141904-1-3, 2011
  70. Distinctive Feature of Ripening During Growth Interruption of InGaAs Quantum Dot Epitaxy Using Bi as a Surfactant, Jpn. J. Appl. Phys., 50, 06GH01-1-4, 2011
  71. Acoustically Induced Spin-Orbit Interactions Revealed by Two-Dimensional Imaging of Spin Transport in GaAs, Phys. Rev. Lett., 106, 216602-1-4, 2011
  72. Carrier-mediated Optomechanical Coupling in GaAs Cantilevers, Phys. Rev. B, 84, 014305-1-10, 2011
  73. Effect of Electron Spin-spin Exchange Interaction on Spin Precession in Coupled Quantum Well, J. of Appl. Phys., 110, 033109-1-5, 2011
  74. Structural, Compositional, and Optical Characterizations of Vertically Aligned AlAs/GaAs/GaP Heterostructure Nanowires Epitaxially Grown on Si Substrate, Jpn. J. Appl. Phys., 49, 015001-1-6, 2010
  75. Parallel-aligned GaAs nanowires with <110> orientation laterally grown on (311)B substrates by gold-catalyzed vapor-liquid-solid mode, Nanotechnology, 21, 095607-1-10, 2010
  76. Towards New Low-dimensional Semiconductor Nanostructures and New Possibilities, NTT Technical Review, 8, 19-26, 2010
  77. Growth and Characterization of Telecommunication-Wavelength Quantum Dots Using Bi as a Surfactant, Jpn. J. Appl. Phys., 49, 06GJ01-1-7, 2010
  78. Observation of Coherent Phonons in Metallic Carbon Nanotubes, Appl. Phys. Lett., 97, 121910-1-3, 2010
  79. <110>-Oriented In0.04Ga0.96As Nanowires Laterally Grown on GaAs (311)B Substrate in Au-Catalyzed Vapor?Liquid?Solid Mode, Appl. Phys. Express, 3, 105002-1-3, 2010
  80. Magneto-optical spectroscopy of excitons and trions in charge-tunable quantum dots, Phys. Rev. B, 79, 121303-1-4(R), 2009
  81. Photoluminescence dynamics in GaAs/AlAs quantum wells modulated by one-dimensional standing surface acoustic waves, Appl. Phys. Lett., 94, 131912-1-3, 2009
  82. Dependence of Electron g-Factor on Barrier Aluminum Content in GaAs/AlGaAs Quantum Wells, Jpn. J. Appl. Phys. Part 1, 48, 063002-1-7, 2009
  83. Spatial and temporal modulation of exciton photoluminescence properties in GaAs/AlAs dynamic quantum dots formed by surface acoustic waves, Phys. Rev. B, 80, 075304-1-8, 2009
  84. Synthesis of GaAs nanowires with very small diameters and their optical properties with the radial quantum-confinement effect, Appl. Phys. Lett., 95, 123104-1-3, 2009
  85. Single-photon emission from single quantum dots in a hybrid pillar microcavity, Appl. Phys. Lett., 92, 081906-1-3, 2008
  86. Dependence of electron spin g-factor on magnetic field in quantum well, J. Lumin., 128, 865-867, 2008
  87. Single-photon emission from single quantum dots in a hybrid pillar microcavity, Appl. Phys. Lett., 92, 081906-1-3, 2008
  88. Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities, Optics Express, 16, 5199-5205, 2008
  89. Photoluminescence lifetime and potential fluctuation in wurtzite Zn1?xCdxO alloy films, Appl. Phys. Lett., 93, 171913-1-3, 2008
  90. Spin selective optical excitation in charge-tunable GaAs quantum dots, Phys. Stat. Sol. (c), 5, 2904-2906, 2008
  91. Full-color electroluminescence from ZnO-based heterojunction diodes, Appl. Phys. Lett., 90, 093512-1-3, 2007
  92. Exciton and biexciton emissions from single GaAs quantum dots in (Al,Ga)As nanowires, Jpn. J. Appl. Phys., 46, 2578-2580, 2007
  93. Tunable slow light of 1.3 um region in quantum dots at room temperature, Jpn. J. Appl. Phys., 46, 2369-2372, 2007
  94. Photoluminescence dynamics of GaAs/AlAs quantum wells modulated by surface acoustic waves, Jpn. J. Appl. Phys., 46, L758-L760, 2007
  95. Dimensional oscillation in GaAs/AlAs quantum wells by two-dimensional standing surface acoustic waves, Appl. Phys. Lett., 91, 141917-1-3, 2007
  96. Fine Structure and magneto-optics of exciton, trion, and charged biexciton states in single InAs quantum dots emitting at 1.3 mm, Phys. Rev. B, 73, 115322-1-7, 2006
  97. Multi-Quantum Structures of GaAs/AlGaAs Free Standing Nanowires, Jpn. J. Appl. Phys., 45, 3568-3571, 2006
  98. Detecting spatially localized excitons in InGaN quantum well structures with a micro-photoluminescence technique, Solid State Comm., 138, 590-593, 2006
  99. Modifying optical properties of InGaN quantum wells by a large piezoelectric polarization, Phys. Stat. Sol. (c), 3, 1974-1977, 2006
  100. Synthesis of terahertz electromagnetic wave pulses using amplitude and phase masks, Chem. Physics, 326, 577-582, 2006
  101. Vertical GaP Nanowires Arranged at Atomic Steps on Si(111) Substrates, Appl. Phys. Lett., 89, 033114-1-3, 2006
  102. InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers, Appl. Phys. Lett., 89, 101110-1-3, 2006
  103. Detecting coupled excitons with micro-photoluminescence techniques in bilayer quantum dots, Phys. Rev. B, 74, 115322-1-6, 2006
  104. Classical and quantum optical correlation effects between single quantum dots: The role of the hopping photon, Phys. Rev. B, 74, 115334-1-5, 2006
  105. Optical characteristics of single InAs/InGaAsP/InP(100) quantum dots emitting at 1.55 mm, Appl. Phys. Lett., 89, 181113-1-3, 2006
  106. Effects of nonradiative centers on localized excitons in InGaN quantum well structures, Appl. Phys. Lett., 89, 222110-1-3, 2006
  107. Quantum confinement effects on electron spin g-factor in semiconductor quantum well structures, Phys. Stat. Sol. (c), 3, 3496-3499, 2006
  108. Zn1-xCdxO/ZnO Heterostructures for Visible Light Emitting Devices, Jpn. J. Appl. Phys., 44, L4-6, 2005
  109. Observation of Cavity Polaritons in InGaN Microcavities, Phys. Stat. Sol. (c), 2, 809-812, 2005
  110. Nanoholes in InP and C60 Layers on GaAs Substrates by Using AlGaAs Nanowire Templates, Jpn. J. Appl. Phys., 44, L428-431, 2005
  111. Blue-purplish InGaN quantum wells with shallow depth of exciton localization, Appl. Phys. Lett., 86, 191902-1-3, 2005
  112. Terahertz wave detection performance of photoconductive antennas: Role of antenna structure and gate pulse intensity, J. of Appl. Phys., 97, 103103-1-6, 2005
  113. Exciton absorption properties of exciton-biexciton coherently coupled system in quantum dots, Phys. Rev. B, 71, 195334-1-9, 2005
  114. Optical nonlinearity induced by exciton-biexciton coherent effects in InGaAs quantum dots, Appl. Phys. Lett., 87, 102101-1-3, 2005
  115. Charged exciton emission at 1.3 mm from single InAs quantum dots grown by metalorganic chemical vapour deposition, Appl. Phys. Lett., 87, 172101-1-3, 2005
  116. Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells, Jpn. J. Appl. Phys., 44, L1381-L1384, 2005
  117. Control of Exciton-photon coupling in GaN-based Microcavities, NTT Technical Review, 3, 27-35, 2005
  118. Coherent Nonlinear Optical Properties in Quantum Dots, NTT Technical Review, 3, 19-26, 2005
  119. Nanoholes Formed by Au Particles Digging into GaAs and InP Substrates by Reverse Vapor-Liquid-Solid Mechanism, Jpn. J. Appl. Phys., 44, L1553-L1555, 2005
  120. Low-frequency spectral enhancement of THz electromagnetic waves emitted from InAs Surface with increased excitation intensity, J. of Appl. Phys., 95, 2141-2145, 2004
  121. Quantum Computation with Quantum Dot Excitons, Semicond. Sci. Technol., 19, S392-396, 2004
  122. Effects of Biexcitons on Exciton Decoherence Processes in InGaAs Quantum Dots, Phys. Rev. B, 69, 155328 -1-8, 2004
  123. Cavity Polaritons in InGaN Microcavities at Room Temperature, Phys. Rev. Lett., 92, 256402-1-4, 2004
  124. Systematic pump-probe terahertz wave emission spectroscopy of a photoconductive antenna fabricated on low-temperature grown GaAs, J. of Appl. Phys., 96, 3635-3638, 2004
  125. GaAs/AlGaAs Nanowires Capped with AlGaAs Layers on GaAs (311)B Substrates, Appl. Phys. Lett., 85, 1808-1810, 2004
  126. Characterization of Wurtzite Zn1-xCdxO Films Using Remote Plasma-Enhanced Metalorganic Chemical Vapor Deposition, Jpn. J. Appl. Phys., 43, L1452-1454, 2004
  127. Positional Control of Self-assembled Quantum Dots by Patterning Nanoscale SiN islands, Appl. Phys. Lett., 85, 2836-2838, 2004
  128. Spatially Ordered Self-assembled Quantum Dots with Uniform Shapes Fabricated by Patterning Nanoscale SiN Islands, Jpn. J. Appl. Phys. Part 1, 43, 6894-6899, 2004
  129. High Luminescent Efficiency of InGaN Multiple Quantum Wells Grown on InGaN Underlying Layers, Appl. Phys. Lett., 85, 3089-3091, 2004
  130. Effects of exciton?biexciton coherent coupling on exciton absorption in quantum dots, Appl. Phys. Lett., 85, 3480-3482, 2004
  131. Exciton Spin Relaxation Properties in Zero Dimensional Semiconductor Quantum Dots, Jpn. J. Appl. Phys., 42, 3340-3349, 2003
  132. Electric-field-induced Anisotropy of Excitonic Optical Properties in Semiconductor Quantum Dots, J. of Appl. Phys., 94, 342-347, 2003
  133. Low-threshold lasing of InGaN vertical-cavity surface-emitting lasers with dielectric distributed Bragg reflectors, Appl. Phys. Lett., 83, 830-832, 2003
  134. Piezoelectric Effects on Photoluminescence Properties in 10-nm-thick InGaN Quantum Wells, Appl. Phys. Lett., 83, 4791-4793, 2003
  135. Exciton Rabi Oscillation in Single Quantum Dot, Phys. Rev. Lett., 87, 246401-1-4, 2001
  136. Lateral Electric-field effects on Excitonic Photoemission in InGaAs Quantum Disks, Appl. Phys. Lett., 76, 867-869, 2000
  137. Effect of Electron-Hole Interaction on Electron Spin Relaxation in GaAs/AlGaAs Quantum Wells at Room Temperature, J. of Appl. Phys., 87, 3394-3398, 2000
  138. Spin-selective excitation of excitons and biexcitons in InxGa1-xAs quantum disks: Suppression of the spin-flip process in semiconductor zero-dimensional systems, Phys. Rev. B, 60, 5791-5796, 1999
  139. Spin relaxation of excitons in zero-dimensional InGaAs quantum disks, Appl. Phys. Lett., 72, 1341-1343, 1998
  140. Near-field optical spectroscopy and imaging of InGaAs/AlGaAs quantum dots, Appl. Phys. Lett., 72, 3494-3496, 1998
  141. Photon-spin controlled lasing oscillation in surface emitting lasers, Appl. Phys. Lett., 73, 566-568, 1998
  142. Excitonic optical properties in fractional-layer-superlattice wire structures in intermediate confinement regime between two-dimension and one dimension, Phys. Rev. B, 55, 2429-2435, 1997
  143. Radiative recombination lifetime of excitons in thin quantum boxes, J. of Appl. Phys., 81, 1785-1789, 1997
  144. Effects of dimensionality on radiative recombination lifetime of excitons in thin quantum boxes of intermediate regime between zero and two dimensions, Jpn. J. Appl. Phys., 36, 4204-4208, 1997
  145. Excitonic quantum confinement effects and exciton electroabsorption in semiconductor thin quantum box, J. of Appl. Phys., 82, 1667-1677, 1997
  146. Excitonic optical properties in semiconductor thin quantum boxes of intermediate regime between zero and two dimensions, Appl. Phys. Lett., 68, 2132-2134, 1996
  147. Excitonic optical properties in fractional-layer-superlattice wire structure,, Appl. Phys. Lett., 69, 1512-1514, 1996
  148. Bismuth induced enhancement of Rashba spin-orbit interaction in GaAsBi/GaAs heterostructures, Applied Physics Letters, 122(18), 20230501

Publications such as books

  1. 2021, Fundamental Properties of Semiconductor Nanowires, Fundamental Properties of Semiconductor Nanowires, Springer, Guoqiang Zhang; Kouta Tateno; Hideki Gotoh, 9789811590504
  2. 2017/10/11, Novel Compound Semiconductor Nanowires: Materials, Devices, and Applications, Novel Compound Semiconductor Nanowires: Materials, Devices, and Applications, Jenny Stanford Publishing, Guoqiang Zhang; Kouta Tateno; Hideki Gotoh, 9814745766, 9814745766, 528

Invited Lecture, Oral Presentation, Poster Presentation

  1. Silicon Microdisk Resonators in the Mid-Infrared for On-Chip Gas Sensing, Takuma Miyake; Rikito Osako; Xuejun Xu; Kentarou Sawano; Takuya Maruizumi; Takehiko Tawara; Hideki Gotoh, 2020 International Conference on Solid State Devices and Materials (SSDM2020), 2020/10
  2. Electrical performance improvement of InAs/InP nanowire telecom-band light emitting diodes, G. Zhang; T. Tawara; H. Gotoh, 42nd Photonics & Electromagnetic Res. Symp. (PIERS2019), 2019/12
  3. Optical absorption and Emission of Erbium Ions in Integrated Optical Waveguides, X. Xu; V. Fili; T. Inaba; T. Tawara; H. Omi; H. Gotoh, Int. School and Symp. on Nanoscale Transport and phoTonics 2019 (ISNTT2019), 2019/11
  4. Improvement of the Crystallinity of Gd2O3 on Si by an Interface Control, T. Inaba; X. Xu; T. Tawara; H. Omi; H. Yamamoto; H. Gotoh, Int. School and Symp. on Nanoscale Transport and phoTonics 2019 (ISNTT2019), 2019/11
  5. Micromechanical Control of Exciton Lifetime, R. Ohta; H. Okamoto; T. Tawara; H. Gotoh; H. Yamaguchi, Int. School and Symp. on Nanoscale Transport and phoTonics 2019 (ISNTT2019), 2019/11, English
  6. Site-controlled Vertical InP Nanowires by Self-assembled Indium Particle Array, G. Zhang; T. Tawara; H. Gotoh, Int. School and Symp. on Nanoscale Transport and phoTonics 2019 (ISNTT2019), 2019/11
  7. Optical Coherent Transient of 167Er3+ in Y2SiO5 at Telecom-band Wavelength, M. Hiraishi; M. IJspeert; T. Tawara; S. Adachi; R. Kaji; H. Omi; H. Gotoh, Int. School and Symp. on Nanoscale Transport and phoTonics 2019 (ISNTT2019), 2019/11
  8. Horizontal slot waveguides based on epitaxial rare-earth oxide on Si, X. Xu; V. Fili; T. Inaba; T. Tawara; H. Omi; H. Gotoh, 2019 Int. Conf. on Solid State Devices and Materials (SSDM2019), 2019/09
  9. Drift spin dynamics in two-dimensional electron gas, Yoji Kunihashi; Yusuke Tanaka; Haruki Sanada; Koji Onomitsu; Hideki Gotoh; Makoto Kohda; Junsaku Nitta; Tetsuomi Sogawa, SPIE Optics+Photonics, 2019/08
  10. Cascaded optical fiber link using PLC-based laser repeater stations, T. Akatsuka; T. Goh; H. Imai; K. Oguri; A. Ishizawa; I. Ushijima; N. Ohmae; M. Takamoto; H. Katori; T. Hashimoto; H. Gotoh; and T. Sogawa, International Conference on Laser Spectroscopy (ICOLS2019), 2019/07
  11. Horizontal slot waveguides with strong optical confinement in low refractive index oxide films, X. Xu; T. Inaba; T. Tawara; H. Omi; H. Gotoh, 24th Optelectronics and Communications Conf. (OECC2019), 2019/07
  12. Strain-induced lifetime modulation of GaAs excitons with a micromechanical resonator, R. Ohta; H. Okamoto; T. Tawara; H. Gotoh; H. Yamaguchi, 21st Int. Conf. on Electron Dynamics in Semiconductors Optoelectronics and Nanostructures (EDISON21), 2019/07
  13. Mechanical control of localized exciton: strained coupling between dark and bright states and mechanical control of exciton lifetime, R. Ohta; H. Okamoto; T. Tawara; H. Gotoh; H. Yamaguchi, Canada-Japan Workshop on Hybrid Quantum Systems (HQS2019), 2019/06
  14. Telecom-band lasing nanowires at room temperature, G. Zhang; M. Takiguchi; K. Tateno; T. Tawara; M. Notomi; H. Gotoh, Compound Semiconductor Week 2019 (CSW2019), 2019/05
  15. Mechanical control of localized exciton, R. Ohta; H. Okamoto; T. Tawara; H. Gotoh; H. Yamaguchi, Frontiers in Quantum Materials & Device Workshop (FQMD2019), 2019/05
  16. Observation of Phase Relaxation in Spin Superposition by Polarization- and Time-Resolved Pump and Probe Measurements, H. Muramatsu; T. Ito; H. Gotoh; M. Ichida; and H. Ando, 2018 International Conference on Solid State Devices and Materials (SSDM2018), 2018/09
  17. Dynamics of Locally Injected Spin Distribution in Undoped GaAs Quantum Wells, H. Sanada; Y. Kunihashi; Y. Tanaka; A. Stramma; H. Gotoh; K. Onomitsu; M. Kohda; J. Nitta; and T. Sogawa, 2018 International Conference on Solid State Devices and Materials (SSDM2018), 2018/09
  18. Nanowire-based telecom-band light emitting diodes, G.Zhang; D.Gnatek; M.Takiguchi; K.Tateno; S.Sasaki; X.Xu; T.Tawara; and H. Gotoh, 2018 International Conference on Solid State Devices and Materials (SSDM2018), 2018/09
  19. Rabi oscillation 167Er3+ toward quantum memories, M. Hiraishi; M. IJspeert; T. Tawara; and H. Gotoh, 2018 International Conference on Solid State Devices and Materials (SSDM2018), 2018/09
  20. Dynamics of dark spin memories in undoped GaAs quantum wells, H. Sanada; Y. Kunihashi; Y. Tanaka; A. Stramma; H. Gotoh; K. Onomitsu; M. Kohda; J. Nitta; and T. Sogawa, 34th International Conference on the Physics of Semiconductors (ICPS2018), 2018/08
  21. Current-controlled Dresselhaus spin-orbit interaction, Y. Kunihashi; H. Sanada; Y. Tanaka; H. Gotoh; K. Onomitsu; M. Kohda; J. Nitta; and T. Sogawa, 34th International Conference on the Physics of Semiconductors (ICPS2018), 2018/08
  22. Transient spectroscopy of long-lived dark spins in GaAs quantum wells, H. Sanada; A. Stramma; Y. Kunihashi; Y. Tanaka; H. Gotoh; K. Onomitsu; M. Kohda; J. Nitta; and T. Sogawa, 10th International School and Conference on Physics and Applications of Spin Phenomena in Solids (PASPS10), 2018/08
  23. Simple method to lock an optical frequency comb to an ultra-stable laser without an RF signal generator, K. Hitomi; A. Ishizawa; K. Hitachi; T. Nishikawa; H. Gotoh; T. Sogawa; K. Hara, The 13th Pacific Rim Conference on Lasers and Electro-Optics (CLEO Pacific Rim 2018), 2018/07
  24. Characterization of Acoustic Phonons in InGaAsP MQW by Asynchronous Optical Sampling, K. Hitachi; M. Someya; A. Ishizawa; T. Nishikawa; and H. Gotoh, The 13th Pacific Rim Conference on Lasers and Electro-Optics (CLEO Pacific Rim 2018), 2018/07
  25. Nonequilibrium Dirac electron dynamics in SiC graphene probed by sub-10-fs angle-resolved photoemission spectroscopy, K. Oguri; K. Tome; H. Mashiko; Y. Sekine; K. Kato; H. Hibino; A. Suda; and H. Gotoh, XXI International Conference on Ultrafast Phenomena (UP2018), 2018/07
  26. Electric dipole oscillation in solids characterized by Fourier transform extreme ultraviolet attosecond spectroscopy, Y. Chisuga; H. Mashiko; K. Oguri; I. Katayama; J. Takeda; and H. Gotoh, XXI International Conference on Ultrafast Phenomena (UP2018), 2018/07
  27. InP/InAs heterostructure nanowires grown by self-catalyzed VLS mode, G. Zhang and H.Gotoh, Nanowire Week 2018, 2018/06
  28. Gb/s direct modulation of a single InP/InAs nanowire light emitting diode at telecom-band, M. Takiguchi; G.Zhang; S.Sasaki; K.Nozaki; E.Chen; K.Tateno; T.Tawara; A.Shinya; H.Gotoh; and M. Notomi, Nanowire Week 2018, 2018/06
  29. Carrier-envelope-offset locking of 25-GHz EOM comb based on a free-running CW Laser Diode, A. Ishizawa; T. Nishikawa; K. Hara; K. Hitachi; T. Sogawa; and H. Gotoh, Conference on Lasers and Electro-Optics (CLEO 2018), 2018/05
  30. Time-resolved ARPES Based on 8-fs High-harmonic Source in the Extreme Ultraviolet Region, K. Toume; K. Oguri; H. Mashiko; K. Kato; Y. Sekine; H. Hibino; A. Suda and H. Gotoh, Conference on Lasers and Electro-Optics (CLEO 2018), 2018/05
  31. Excitation Power Dependence of Nonequilibrium Carrier Relaxation Dynamics in Graphene, Y. Hasegawa; K. Oguri; K. Kato; T. Nishikawa; and H. Gotoh, International School and Symposium on Nanoscale Transport and phoTonics (ISNTT2017), 2017/11
  32. Diffusion-suppressed Drift-spin Dynamics in GaAs Quantum Wells, Y. Tanaka; Y. Kunihashi; H. Sanada; H. Gotoh; K. Onomitsu; M. Kohda; J. Nitta; and T. Sogawa, International School and Symposium on Nanoscale Transport and phoTonics (ISNTT2017), 2017/11
  33. Spin Diffusion Dynamics Under Spin-orbit Magnetic Field in Undoped GaAs Quantum Wells, H. Sanada; Y. Kunihashi; Y. Tanaka; H. Gotoh; K. Onomitsu; M. Kohda; J. Nitta; and T. Sogawa, International School and Symposium on Nanoscale Transport and phoTonics (ISNTT2017), 2017/11
  34. Evaluation of 2f -to-3f Self-referencing Interferometer Using Dual-pitch PPLN Ridge Waveguides, K. Hara; K. Hitachi; A. Ishizawa; T. Nishikawa; and H. Gotoh, International School and Symposium on Nanoscale Transport and phoTonics (ISNTT2017), 2017/11
  35. Telecom-band Light Emitting Diodes Based on Bottom-up InAs/InP Heterostructure, G. Zhang; M. Takiguchi; K. Tateno; T. Tawara; M. Notomi; and H. Gotoh, International School and Symposium on Nanoscale Transport and phoTonics (ISNTT2017), 2017/11
  36. State Preparation and Lifetime Measurements through Spectral Hole Burning in 167Er3+:Y2SiO5, M. I. Jspeert; M. Hiraishi; T. Tawara; K. Shimizu; H. Omi; S. Adachi; and H. Gotoh, International School and Symposium on Nanoscale Transport and phoTonics (ISNTT2017), 2017/11
  37. Drift-induced Enhancement of Cubic Dresselhaus Spin-orbit Interaction in Two-dimensional Electron Gas, Y. Kunihashi; H. Sanada; Y. Tanaka; H. Gotoh; K. Onomitsu; K. Nakagawara; M. Kohda; J. Nitta; and T. Sogawa, International School and Symposium on Nanoscale Transport and phoTonics (ISNTT2017), 2017/11
  38. Dynamic coupling control of dark and bright bound excitons in a mechanical resonator, R. Ohta; H. Okamoto; T. Tawara; H. Gotoh; H. Yamaguchi, International Symposium on Hybrid Quantum Systems 2017 (HQS2017), 2017/09
  39. Growth of CeO2 on Si (111) substrates as a magnetically purified host crystal for Er3+ dopants, T. Inaba; T. Tawara; H. Omi; H. Yamamoto; H. Gotoh, International Symposium on Hybrid Quantum Systems 2017 (HQS2017), 2017/09
  40. Λ-system initialization through spectral hole burning in 167Er3+:Y2SiO5, M. IJspeert; G. Mariani; T. Tawara; K. Shimizu; H. Omi; S. Adachi; H. Gotoh, International Symposium on Hybrid Quantum Systems 2017 (HQS2017), 2017/09
  41. Population trapping through spectral hole burning in 167Er3+:Y2SiO5, M. IJspeert; G. Mariani; T. Tawara; K. Shimizu; H. Omi; S. Adachi; H. Gotoh, 2017 International Conference on Solid State Device and Materials (SSDM2017), 2017/09
  42. Broadband isolated attosecond pulse generation and its application to PHz-wave and electron interaction dynamics in solid, K. Oguri; H. Mashiko; and H. Gotoh, 2nd International Symposium on Attosecond Science, 2017/08
  43. Spatial-temporal analysis of diffusion-suppressed drift-spin dynamics, Yusuke Tanaka; Yoji Kunihashi; Haruki Sanada; Hideki Gotoh, 22nd International Conference on Electronic Properties of Two Dimensional Systems/18th International Conference on Modulated Semiconductor Structures (EP2DS-22/MSS-18), 2017/08
  44. Diffusion Dynamics of Long-lived Electron Spins in Undoped GaAs Quantum Wells, H. Sanada; Y. Kunihashi; Y. Tanaka; H. Gotoh; K. Onomitsu; M. Kohda; J. Nitta; and T. Sogawa, 22nd International Conference on Electronic Properties of Two Dimensional Systems/18th International Conference on Modulated Semiconductor Structures (EP2DS-22/MSS-18), 2017/08
  45. Electric field induced enhancement of cubic Dresselhaus spin-orbit interaction in GaAs quantum well, Y. Kunihashi; H. Sanada; Y. Tanaka; H. Gotoh; K. Onomitsu; K. Nakagawara; M. Kohda; J. Nitta; and T. Sogawa, 22nd International Conference on Electronic Properties of Two Dimensional Systems/18th International Conference on Modulated Semiconductor Structures (EP2DS-22/MSS-18), 2017/08
  46. InP/InAs heterostructure nanowires by self-catalyzed VLS mode, Guoqiang Zhang and Hideki Gotoh, The 15th Internationall Conference on Advanced Materials (IUMRS-ICAM2017), 2017/08
  47. Development of an optical lattice clock for a frequency comparison through an optical fiber link over 100 km, Hiromitsu Imai; Tomoya Akatsuka; Katsuya Oguri; Atsushi Ishizawa; Masao Takamoto; Manoj Das; Noriaki Ohmae; Hidetoshi Katori; Hideki Gotoh; Tetsuomi Sogawa, International Conference on Laser Spectroscopy (ICOLS 2017), 2017/07
  48. Optical fiber link at 1397 nm over 100 km for networking distant Sr optical lattice clocks with 10-18 uncertainties, Tomoya Akatsuka; Hiromitsu Imai; Katsuya Oguri; Atsushi Ishizawa; Tetsushi Takano; Masao Takamoto; Hidetoshi Katori; Hideki Gotoh; Tetsuomi Sogawa, International Conference on Laser Spectroscopy (ICOLS 2017), 2017/07
  49. Petaherz electron dynamics with wide-bandgap semiconductor, H. Mashiko; K. Oguri; Y. Chisuga; H. Masuda; I. Katayama; J. Takeda; and H. Gotoh, 6th international conference on Attosecond Physics (ATTO2017), 2017/07
  50. Reduced pulse energy for frequency stabilization with a dual-pitch periodically poled lithium niobate ridge waveguide, K. Hitachi; K. Hara; O. Tadanaga; A. Ishizawa; T. Nishikawa; and H. Gotoh, Conference on Lasers and Electro-optics/ Europian Quantum Electronics Conference (CLEO/Europe-EQEC 2017), 2017/06
  51. Spectral Hole Narrowing in Er3+ 4f Transitions by Isotope Separation, T. Tawara; G. Mariani; K. Shimizu; H. Omi; S. Adachi; H. Gotoh, Conference on Lasers and Electro-Optics (CLEO2017), 2017/05
  52. Attosecond-pulse continua with over 70 eV bandwidth by using double optical gated sub-two-cycle pulse, K. Oguri; H. Mashiko; T. Ogawa; Y. Hanada; and H. Gotoh, The 8th Shanghai-Tokyo Advanced Research Symposium on Ultrafast Intense Laser Science (STAR8), 2017/05
  53. Au-free InP/InAs heterostructure nanowires, Guoqiang Zhang and Hideki Gotoh, Compound Semiconductor Week 2017 (CSW2017), 2017/05
  54. Mid-infrared lasing of a single InAs nanowire, Hisashi Sumkura; Guoqiang Zhang; Hideki Gotoh and Masaya Notomi, Nanowire Week 2017, 2017/05
  55. Petahertz semiconductor drive characterized by isolated attosecond pulse, H. Mashiko; K. Oguri; and H. Gotoh, The 8th Asian Workshop on Generation and Application of Coherent XUV and X-ray Radiation (8th AWCXR), 2017/03
  56. InP/InAs heterostructure nanowires grown by indium-particle-assisted vapor-liquid-solid mode, Guoqiang Zhang; and Hideki Gotoh, 31st DGKK Workshop: Epitaxy of III/V Semiconductor, 2016/12
  57. Petaherz electronic response in semiconductor (invited), K. Oguri; H. Mashiko; T. Yamaguchi; A. Suda; and H. Gotoh, The 9th Asian Symposium on Intense Laser Science(ASILS9), 2016/11
  58. Reduction of pulse energy for frequency stabilization with dual-pitch periodically poled lithium niobate waveguides, K. Hara; K. Hitachi; O. Tadanaga; T. Ishizawa; T. Nishikawa; T. Sogawa; H. Gotoh, 2016 IEEE Photonics Conference (IPC), 2016/10
  59. Generation of low-phase-noise millimeter waves in a wide frequency range by using a frequency comb based on electro-optics-modulators, A. Ishizawa; T. Nishikawa; T. Goto; K. Hitachi; T. Sogawa; and H. Gotoh, Frontiers in Optics (FIO) 2016, 2016/10
  60. Light-induced electron dynamics in semiconductor from femtosecond to attosecond regime (invited), K. Oguri; H. Mashiko; T. Yamaguchi; A. Suda; and H. Gotoh, The International Symposium on Ultrafast Intense Laser Science 15 (ISUILS15), 2016/10
  61. Spin manipulation of drifting electrons by electrically-controlled spin-orbit interaction in GaAs quantum well, Y. Kunihashi; H. Sanada; H. Gotoh; K. Onomitsu; M. Kohda; J. Nitta; and T. Sogawa, International Conference on the Physics of Semiconductors 2016 (ICPS2016), 2016/08
  62. Site-defined InP/InAs heterostructure nanowires with the diameter tuned from microscale to nanoscale, G. Zhang; T. Sogawa; H. Gotoh, International Conference on the Physics of Semiconductors 2016 (ICPS2016), 2016/08
  63. Spin coherence enhanced by in-plane electric field-induced spin-orbit interaction, Y. Kunihashi; H. Sanada; H. Gotoh; K. Onomitsu; M. Kohda; J. Nitta; and T. Sogawa, The 43rd International Symposium on Compound Semiconductors (ISCS2016), 2016/06
  64. Site-defined InP/InAs heterostructure nanowires with tunable diameter by in-situ diameter-tuning technique, G. Zhang; K. Tateno; T. Sogawa; and H. Gotoh, The 43rd International Symposium on Compound Semiconductors (ISCS2016), 2016/06
  65. Acoustic transport and manipulation of electron spins in semiconductors, H. Sanada; Y. Kunihashi; H. Gotoh; K. Onomitsu; M. Kohda; J. Nitta; P.V. Santos and T. Sogawa, SPICE Workshop Quantum Acoustics ? Surface Acoustic Waves meets Solid State Qubits, 2016/05
  66. Gate-controlled spin coherence of drifting electrons in GaAs quantum wells, Y. Kunihashi; H. Sanada; H. Gotoh; K. Onomitsu; and T. Sogawa, Internetional Symposium on Nanoscale Transport and Technology 2015 (ISNTT 2015), 2015/11
  67. Bridging the gap between the Nanometer-scale bottom-up and micrometer-scale top-down approaches through a self-assembly process, G. Zhang; M. Takiguchi; K. Tateno; and H. Gotoh, Internetional Symposium on Nanoscale Transport and Technology 2015 (ISNTT 2015), 2015/11
  68. Acoustic control of optical properties and spins in quantum wells, T. Sogawa; H. Sanada; Y. Kunihashi; and H. Gotoh, International Symposium on Advanced Nanodevices and Nanotechnology (ISANN2015), 2015/11
  69. Electrical control of drifting spin coherence, Y. Kunihashi; H. Sanada; H. Gotoh; K. Onomitsu; M. Kohda; J. Nitta; and T. Sogawa, International Workshop : Quantum Nanostructures and Electron-Nuclear Spin Interactions, 2015/10
  70. Estimation of Spin-orbit Interaction Parameters with Drifting Spins in Semiconductor Quantum Wells, Y. Kunihashi; H. Sanada; H. Gotoh; K. Onomitsu; M. Kohda; J. Nitta; and T. Sogawa, 2015 International Conference on Solid State Devices and Materials (SSDM 2015), 2015/09
  71. Determination of phonon decay-rate in p-type Si under Fano resonance by meas-urements of coherent phonons with femto-second laser pulses, K. Kato; K. Oguri; H. Sanada; T. Tawara; T.Sogawa and H. Gotoh, 2015 International Conference on Solid State Devices and Materials (SSDM 2015), 2015/09
  72. Bridging the Gap between the Nanometer-scale Bottom-up and Micrometer-scale Top-down Approaches for Site-defined InP/InAs Heterostructure Nanowires, G. Zhang; M. Takiguchi; K. Tateno; and H. Gotoh, 2015 International Conference on Solid State Devices and Materials (SSDM 2015), 2015/09
  73. Observation of Hole-Spin Superposition in GaAs Quantum Well under Magnetic Field, Tetsu Ito; Hideki Gotoh; Masao Ichida; and Hiroaki Ando, 17th International Conference on Modulated Semiconductor Structures (MSS-17), 2015/07
  74. Self-Aligned Gate-All-Around InAs Nanowire Field-Effect Transistors, Satoshi Sasaki; Kouta Tateno; Guoqiang Zhang; Shiro Saito; and Hideki Gotoh, 17th International Conference on Modulated Semiconductor Structures (MSS-17), 2015/07
  75. Optical measurements of perpendicularly polarized spin injection in L10-FePt/MgO/n-GaAs structures, R. Osugi; Y. Kunihashi; H. Sanada; M. Kohda; H. Gotoh; T. Sogawa; and J. Nitta, 17th International Conference on Modulated Semiconductor Structures (MSS-17), 2015/07
  76. Electrical control of drifting spin coherence in persistent spin helix condition, Y. Kunihashi; H. Sanada; H. Gotoh; K. Onomitsu; M. Kohda; J. Nitta; and T. Sogawa, 17th International Conference on Modulated Semiconductor Structures (MSS-17), 2015/07
  77. Octave Spanning Frequency Comb Generation in a Dispersion-Controlled Short Silicon-Wire Waveguide with a Fiber Laser Oscillator, T. Goto; A. Ishizawa; R. Kou; T. Tsuchizawa; N. Matsuda; K. Hitachi; T. Nishikawa; K. Yamada; T. Sogawa; and H. Gotoh, The 2015 Conference on Lasers and Electro-Optics (CLEO 2015), 2015/05
  78. A Robust 2f-to-3f Collinear Interferometer with a Dual-Pitch Periodically Poled Lithium Niobate Ridge Waveguide, K. Hitachi; A. Ishizawa; O. Tadanaga; H. Mashiko; T. Nishikawa; T. Sogawa; H. Gotoh, The 2015 Conference on Lasers and Electro-Optics (CLEO 2015), 2015/05
  79. Broadband Dual-comb Spectroscopy with Cascaded-electro-optic-modulator-based Frequency Combs, T. Nishikawa; A. Ishizawa; M. Yan; H. Gotoh; T. W. H?nsch; and N. Picque, The 2015 Conference on Lasers and Electro-Optics (CLEO 2015), 2015/05
  80. Optical Frequency Combs of Multi-GHz Line-spacing for Real-time Multi-heterodyne Spectroscopy, A. Ishizawa; T. Nishikawa; M. Yan; G. Millot; H. Gotoh; T. W. H?nsch; and N. Picque, The 2015 Conference on Lasers and Electro-Optics (CLEO 2015), 2015/05
  81. Low-Phase-Noise Millimeter-Wave Signal Generator assisted with Frequency Comb based on Electro-Optics-Modulators, A. Ishizawa; T. Nishikawa; T. Goto; K. Hitachi; T. Sogawa; and H. Gotoh, The 2015 Conference on Lasers and Electro-Optics (CLEO 2015), 2015/05
  82. Anisotropic spin dynamics of drifting electrons with coexistence of Rashba and Dresselhaus spin-orbit interactions, Y. Kunihashi; H. Sanada; H. Gotoh; K. Onomitsu; M. Kohda; J. Nitta; and T. Sogawa, 2014 International Conference on Solid State Devices and Materials (SSDM 2014), 2014/09
  83. Effects of Band Mixing on Hole-Spin Superposition in GaAs/AlGaAs Quantum Wells, T. Ito; H. Gotoh; M. Ichida; and H. Ando, 2014 International Conference on Solid State Devices and Materials (SSDM 2014), 2014/09
  84. Strain Characterization of InAs Segment in Au-free InP/InAs Heterostructure Nanowires by Micro-Raman Measurement, G. Zhang; S. Kenichi; S. Nakagawa; K. Tateno; T. Sogawa and H. Gotoh, 2014 International Conference on Solid State Devices and Materials (SSDM 2014), 2014/09
  85. Direct Imaging of Long-Distance Spin Transport under Persistent Spin Helix Condition in GaAs Quantum Well, Y. Kunihashi; H. Sanada; H. Gotoh; K. Onomitsu; M. Kohda; J. Nitta; and T. Sogawa, 32nd International Conference on the Physics of Semiconductors (ICPS2014), 2014/08
  86. Manipulation of optical field emitted from autoionizing transition stimulated by isolated attosecond pulse, H. Mashiko; T. Yamaguchi; K. Oguri; A. Suda; and H. Gotoh, 19th International Conference on Ultrafast Phenomena (UP2014), 2014/07
  87. Nonuniform growth rate of semiconductor nanowires with the growth time in the vapor-liquid-solid mode, G. Zhang; K. Tateno; and H. Gotoh, The 17th International Conference on Metalorganic Vapour Phase Epitaxy (ICMOVPE XVII), 2014/07
  88. Temporal characterization of emitted field from autoionization state stimulated by isolated attosecond pulse, H. Mashiko; T. Yamaguchi; K. Oguri; A. Suda; and H. Gotoh, The 2014 Conference on Lasers and Electro-Optics (CLEO 2014), 2014/06
  89. Optical transition between Stark levels in (ErSc)2O3 epitaxitial films, T. Tawara; H. Omi; A. Najar; R. Kaji; S. Adachi; and H. Gotoh, The 2014 Conference on Lasers and Electro-Optics (CLEO 2014), 2014/06
  90. A collinear 2f-to-3f self-referencing interferometer with a dual-pitch PPLN ridge waveguide, K. Hitachi; A. Ishizawa; T. Nishikawa; H. Mashiko; O. Tadanaga; M. Asobe; T. Sogawa; and H. Gotoh, The 2014 Conference on Lasers and Electro-Optics (CLEO 2014), 2014/06
  91. On-Chip Supercontinuum Generation in a Dispersion-Controlled Silicon-Wire Waveguide, A. Ishizawa; T. Goto; H. Nishi; N. Matsuda; R. Kou; K. Hitachi; T. Nishikawa; ; K. Yamada; T. Sogawa; H. Gotoh, The 2014 Conference on Lasers and Electro-Optics (CLEO 2014), 2014/06
  92. TBCl etching for uniform‐diameter InAsP nanowires, Tateno Kouta; Zhang Guoqiang; Gotoh Hideki, The 26th International Conference on Indium Phosphide and Related Materials(IPRM2014), 2014/05
  93. Coherent manipulation of electron spins in acoustically induced moving dots, H. Sanada; Y. Kunihashi; H. Gotoh; K. Onomitsu; M. Kohda; J. Nitta; P. V. Santos; and T. Sogawa, 8th International Conference on Quantum Dots (QD2014), 2014/05
  94. Manipulation of electron spin coherence using acoustically induced moving dots in semiconductors, H. Sanada; Y. Kunihashi; H. Gotoh; K. Onomitsu; M. Kohda; J. Nitta; P. V. Santos; and T. Sogawa, International Symposium on Advanced Nanodevices and Nanotechnology (ISANN2013), 2013/12
  95. Bias and temperature dependences of perpendicularly polarized spin injection in L10-FePt / MgO / GaAs spin injection devices, R. Ohsugi; J. Shiogai; M. Kohda; Y. Kunihashi; H. Sanada; T. Seki; Y. Sakuraba; M. Mizuguchi; H. Gotoh; T. Sogawa; K. Takanashi; and J. Nitta, International Symposium on Nanoscale Transport and Technology (ISNTT2013), 2013/11
  96. Coherent manipulation of electron spins travelling in semiconductors without external magnetic fields, H. Sanada; Y. Kunihashi; H. Gotoh; K. Onomitsu; M. Kohda; J. Nitta; P. V. Santos; and T. Sogawa, International Symposium on Nanoscale Transport and Technology (ISNTT2013), 2013/11
  97. Gate Control of Spatial Electron Distribution in Perisitent Spin Helix State, Y. Kunihashi; H. Sanada; H. Gotoh; K. Onomitsu; M. Kohda; J. Nitta; T. Sogawa, 2013 International Conference on Solid State Devices and Materials (SSDM 2013), 2013/09
  98. Dynamics of Hole-spin Superposition in GaAs/AlGaAs Quantum Wells, T. Ito; H. Gotoh; M. Ichida; and H. Ando, 2013 International Conference on Solid State Devices and Materials (SSDM 2013), 2013/09
  99. InP Nanowires on Graphen-covered Micron Fe Wires, K. Tateno; G. Zhang and H. Gotoh, 2013 International Conference on Solid State Devices and Materials (SSDM 2013), 2013/09
  100. Energy transfer in epitaxial Er2O3 thin films grown on Si(111) substrates, T. Tawara; T. Hozumi; H. Omi; R. Kaji; S. Adachi; H. Gotoh; T. Sogawa, IEEE Photonics Conference 2013 (IPC2013), 2013/09
  101. Size-controlled InAs nanostructures in InP NW grown via the Au-free VLS mode, G. Zhang; D. Birowosuto; K. Tateno; H. Gotoh; and H. Sogawa, SPIE Optics + Photonics, 2013/08
  102. Gate-controlled spin precession of drifting electrons in GaAs QW, Y. Kunihashi; H. Sanada; H. Gotoh; K. Onomitsu; M. Kohda; J. Nitta; T. Sogawa, 16th International Conference on Modulated Semiconductor Structures(MSS-16), 2013/07
  103. Magnetic-field-free electron spin resonance in winding GaAs channel, H. Sanada; Y. Kunihashi; H. Gotoh; K. Onomitsu; M. Kohda; J. Nitta; P. V. Santos; T. Sogawa, 16th International Conference on Modulated Semiconductor Structures(MSS-16), 2013/07
  104. Comparison between magneto-optical Kerr effect and electrical 3T-Hanle effect in perpendicular L10-FePt / MgO / GaAs spin injection devices, R. Ohsugi; J. Shiogai; M. Kohda; Y. Kunihashi; H. Sanada; T. Seki; Y. Sakuraba; M. Mizuguchi; H. Gotoh; T. Sogawa; K. Takanashi; J. Nitta, 7th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH VII), 2013/07
  105. Fano Quantum Interference Effects in Exciton-Biexciton Coherently Coupled System in Quantum Dots, H. Gotoh; H. Sanada; H. Yamaguchi; and T. Sogawa, The 2013 Conference on Lasers and Electro-Optics (CLEO 2013), 2013/06
  106. Biexciton Creation Without Undesireble Excitons for Ideal Entangled Photon Pair Emissions in Optically-active Quantum Dots, H. Gotoh; H. Sanada; H. Yamaguchi; and T. Sogawa, The 40th International Symposium on Compound Semiconductors (ISCS2013), 2013/05
  107. VLS-grown InP Nanowires on Iron Metal Mediated by Graphene Layers, K. Tateno; K. Kanzaki; G. Zhang; H. Gotoh; H. Hibino; T. Sogawa, 2013 Materials Research Society (MRS) Spring Meeting, 2013/04
  108. InAsP-InAs-InAsP hetero-nanowires grown via the self-assisted vapor-liquid-solid mode, G. Zhang; K. Tateno; H. Gotoh; and T. Sogawa, 2012 International Conference on Solid State Devices and Materials (SSDM 2012), 2012/09
  109. Cavity-free laser cooling of a GaAs/AlGaAs micromechanical resonator using optical absorption at exciton states, T. Watanabe; H. Okamoto; K. Onomitsu; H. Gotoh; T. Sogawa; and H. Yamaguchi, 31st International Conference of the Physics of Semiconductors, 2012/07
  110. Imaging of Tunable Spin Precession in GaAs Moving Dots, H. Sanada; H. Gotoh; K. Onomitsu; M. Kohda; P. V. Santos; and T. Sogawa, 31st International Conference of the Physics of Semiconductors, 2012/07
  111. Modifying Excitonic Properties in Quantum Dots using Coherent Phonons Induced by Ultrafast Optical Pulses, H. Gotoh; H. Sanada; H. Yamaguchi; and T. Sogawa, 31st International Conference of the Physics of Semiconductors, 2012/07
  112. InP/InAs multi-stacked heterostructure nanowires grown via the self-assisted vapor-liquid-solid mode, G. Zhang; K. Tateno; H. Gotoh; and T. Sogawa, 31st Electronic Materials Symposium, 2012/07
  113. VLS growth of nanowires on graphen, K. Tateno; G. Zhang; H. Gotoh; H. Hibino; and T. Sogawa, 31st Electronic Materials Symposium, 2012/07
  114. VLS Growth of III-V Semiconductor Nanowires on Graphene Layers, K. Tateno; D. Takagi; G. Zhang; H. Gotoh; H. Hibino; T. Sogawa, 2012 Materials Research Society (MRS) Spring Meeting, 2012/04
  115. Formation of ohmic contact of InP nanowires without annealing processes, G. Zhang; S. Saito; K. Tateno; H. Gotoh; and T. Sogawa, 2011 International Conference on Solid State Devices and Materials (SSDM 2011), 2011/09
  116. Acoustically Controlled Spin-Orbit Interactions in GaAs, H. Sanada; T. Sogawa; H. Gotoh; K. Onomitsu; M. Kohda; J. Nitta; and P. V. Santos, The 15th International Conference on Modulated Semiconductor Structures (MSS-15), 2011/07
  117. Lateral Nanowires with Triangular and Trapezoidal Cross-sections on (311)B and (001) Substrates, G. Zhang; K. Tateno; H. Gotoh; and T. Sogawa, 2010 International Conference on Solid State Devices and Materials (SSDM 2010), 2010/09
  118. Dynamics of highly-polarized travelling spins measured using magneto-optic Kerr effect, H. Sanada; H. Gotoh; M. Kohda; J. Nitta; K. Onomitsu; H. Yamaguchi; and T. Sogawa, 30th International Conference on the Physics of Semiconductors (ICPS2010), 2010/07
  119. Role of Background Photons in a Strongly-Coupled Quantum Dot-Nanocavity System, T. Tawara; H. Kamada; S. Hughes; H. Okamoto; M. Notomi; H. Gotoh, The 37th International Symposium on Compound Semiconductors (ISCS2010), 2010/05
  120. Growth and Characterization of <110>-0riented In0.04Ga0.96As Nanowires Laterally Grown on GaAs (311)B Substrate in the Au-catalyzed Vapor-liquid-solid Mode, G. Zhang; K. Tateno; H. Gotoh; and H. Nakano, The 37th International Symposium on Compound Semiconductors (ISCS2010), 2010/05
  121. Spin Initialization by Polarization-resolved Two-color Optical Pumping in Quantum Dots without Static Magnetic Fields, H. Gotoh; H. Sanada; H. Kamada; H. Yamaguchi; and H. Nakano, The 37th International Symposium on Compound Semiconductors (ISCS2010), 2010/05
  122. Photoluminescence study of bare freestanding gallium arsenide nanowires grown by vapor-liquid-solid method, G. Zhang; K. Tateno; H. Sanada; T. Tawara; H. Gotoh; and H. Nakano, 8th Pacific Rim Conference on Lasers and Elecro-Optics (CLEO/Pacific Rim 2009), 2009/08
  123. Evidence of different doping modes in tapered VLS nanowires by studying axial distribution of carrier concentration in Si-doped InAs nanowires, G. Zhang; K. Tateno; S. Suzuki; H. Gotoh; and H. Nakano, The 14th International Conference on Modulated Semiconductor Structures (MSS-14), 2009/07
  124. Excited-state spectroscopy of charged quantum dots in magnetic field, H. Sanada; T. Sogawa; H. Gotoh; Y. Tokura; H. Yamaguchi; H. Nakano and H. Kamada, The 14th International Conference on Modulated Semiconductor Structures (MSS-14), 2009/07
  125. Size-dependent Optical Properties of Freestanding GaAs Nanowires, G. Zhang; K. Tateno; H. Sanada; T. Tawara; H. Gotoh; and H. Nakano, International Symposium on Nanoscale Transport and Technology (ISNTT 2009), 2009/02
  126. Optical Properties of GaAs/AlAs dynamic quantum wires formed by one-dimensional standing waves, T. Sogawa; H. Sanada; H. Gotoh; H. Yamaguchi; S. Miyashita; and P. V. Santos, IEEE Nanotechnology Materials and Devices Conference 2008 (NMDC2008), 2008/10
  127. Spin Characterization of Excited Trion in GaAs Quantum Dots, H. Sanada; T. Sogawa; H. Gotoh; H. Kamada; H. Yamaguchi; and H. Nakano, Fifth International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS V), 2008/08
  128. Spin Selective Excitation in Charge Tunable GaAs Quantum Dots, H. Sanada; T. Sogawa; H. Gotoh; H. Kamada; H. Yamaguchi; and H. Nakano, The 34 International Symposium on Compound Semiconductors (ISCS2007), 2007/10
  129. Fabrication and Optical Properties of Hybrid-Type Pillar Microcavity, T. Yamaguchi; T. Tawara; H. Gotoh; H. Kamada; H. Okamoto; H. Nakano; O. Mikami, 12th OptoElectronics and Communications Conference (OECC 2007), 2007/07
  130. Dynamic Polarization Anisotropy of Moving Dots Formed by Surface Acoustic Waves, T. Sogawa; H. Sanada; H. Gotoh; H. Yamaguchi; S. Miyashita; and P. V. Santos, International Conference on Electronic Properties of Two-dimensional Systems and Modulated Semiconductor Structures (EP2DS), 2007/07
  131. Dependence of Electron Spin g-Factor on Magnetic Field in Quantum Wells, T. Ito; W. Shichi; Y. Nishioka; M. Ichida; H. Gotoh; H. Kamada; and H. Ando, DPC 07, 2007/06
  132. Temperature Insensitive Ultra LowThreshold Lasing in Quantum-Dot Photonic-Crystal Nanocavities, T. Tawara; H. Kamada; Y.-H. Zhang; N. I. Cade; T. Tanabe; H. Gotoh; D. Ding; S. Johnson; E. Kuramochi; M. Notomi; H. Nakano, Conference on Lasers and Electro-optics (CLEO/QELS2007), 2007/05
  133. Evidence of Quantum Dot-like Nano-objects in InGaN Quantum Wells Provided by Narrow Photoluminescence Spectra from Localized Excitons, H. Gotoh; T. Akasaka; T. Tawara; Y. Konayashi; T. Makimoto; and H. Nakano, International Workshop on Nitride Semiconductors 2006 (IWN2006), 2006/10
  134. Optical Properties of Dynamically-modulated Dots and Wires Formed by Surface Acoustic Waves, T. Sogawa; H. Gotoh; Y. Hirayama; T. Saku; S. Miyashita; P. V. Santos; and K. H. Ploog, International Conference on Solid State Devices and Materials (SSDM2006), 2006/09
  135. Exciton and Biexciton Emissions from Single GaAs Quantum Dots in (Al Ga)As Nanowires, H. Sanada; H. Gotoh; K. Tateno; and H. Nakano, International Conference on Solid State Devices and Materials (SSDM2006), 2006/09
  136. Tunable Slow Light of 1.3 μm Region in Quantum Dots at Room Temperature, H. Gotoh; S. W. Chang; S. L. Chuang; H. Okamoto; and Y. Shibata; H. Sanada, International Conference on Solid State Devices and Materials (SSDM2006), 2006/09
  137. Dimensionality Control in GaAs Quantum Wells Dynamically-modulated by Surface Acoustic Waves, T. Sogawa; H. Gotoh; Y. Hirayama; T. Saku; S. Miyashita; P. V. Santos; and K. H. Ploog, International Conference of Physics of Semiconductors (ICPS28), 2006/07
  138. Quantum confinement effects on electron spin g-factor in semiconductor quantum well structures, T. Ito; S. Morisada; M. Ichida; H. Gotoh; H. Kamada; and H. Ando, EXCON 2006, 2006/06
  139. Dependence of Interference Spectrum between Harmonics from a ZnO Thin Film on the Carrier-envelope Phase of Few-cycle Laser Pulses, A. Ishizawa; H. Gotoh; H. Nakano; A. Nakamura; and J. Temmyo, Conference on Lasers and Electro-optics (CLEO/QELS2006), 2006/05
  140. Detecting Coupled Excitons by Photoluminescence Excitation in Bi-layer Quantum Dots, H. Gotoh; H. Sanada; H. Kamada; H. Nakano; H. Ando; and J. Temmyo, Quantum Electronics and Laser Science Conference (CLEO/QELS2006), 2006/05
  141. Fine-structure and Exciton Complexes in Long-wavelength InAs Quantum Dots, N. I. Cade; H. Gotoh; H. Kamada; T. Tawara; T. Sogawa; H. Nakano; and H. Okamoto, 9th Conference on Optics and Excitons in Confined Systems (OECS-9), 2005/09
  142. Multi-quantum structures of GaAs/AlGaAs free-standing nanowires, K. Tateno; H. Gotoh; and Y. Watanabe, 2005 International Conference on Solid State Devices and Materials (SSDM’05), 2005/09
  143. Modifying Optical Properties of InGaN Quantum Wells by a Large Piezoelectric Polarization, H. Gotoh; T. Tawara; Y. Kabayashi; N. Kobayashi; Y. Yamauchi; T. Makimoto; and T. Saitoh, 6th International Conference on Nitride Semiconductors (ICNS-6), 2005/08
  144. Dispersion Relation of InGaN Cavity Polaritons Measured by Angle-resolved Photoluminescence, T. Tawara; H. Gotoh; H. Kamada; T. Akasaka; T. Makimoto; T. Saitoh; and H. Nakano, Pacific Rim Conference on Lasers and Elecro-Optics (IQEC/CLEO-PR2005), 2005/07
  145. Enhanced Single QD Spectra from 2D GaAs Photonic Crystal Cavities, T. Ito; T. Tawara; K. Tateno; H. Yamaguchi; M. Ueki; S. Mitsugi; E. Kuramochi; H. Gotoh; and M. Notomi, Pacific Rim Conference on Lasers and Elecro-Optics (IQEC/CLEO-PR2005), 2005/07
  146. Dephasing of Single InGaAs QD Exciton with Interaction between QDs, T. Kutsuwa; H. Gotoh; H. Kamada; J. Temmyo; and H. Ando, International Quantum Electronics Conference (IQEC/CLEO-PR2005), 2005/07
  147. Entangling Single-Quantum Dot Excitons through Dipole-Dipole Interactions in a Semiconductor, S. Hughes; H. Gotoh; and H. Kamada, International Quantum Electronics Conference (IQEC/CLEO-PR2005), 2005/07
  148. Optical Characteristics of Single InAs/InGaAs Quantum Dots Emitting around 1.3 mm, N. I. Cade; H. Okamoto; H. Gotoh; H. Kamada; T. Tawara; T. Sogawa; and H. Nakano, International Quantum Electronics Conference (IQEC/CLEO-PR2005), 2005/07
  149. Optical Nonlinearity by Exciton-biexciton Coherent Effects in Quantum Dots, H. Gotoh; H. Kamada; T. Saitoh; H. Ando; and J. Temmyo, International Quantum Electronics Conference (IQEC/CLEO-PR2005), 2005/07
  150. Nanowires and Nanoholes on GaAs (311) B Substarates, K. Tateno; H. Gotoh; and Y. Watanabe, International Conference on Nanoelectronics Nanostrucures and Carrier Interactions (NNCI2005), 2005/02
  151. Exciton and Biexciton Coherent Optical Properties in Semiconductor Nanostructures, H. Gotoh and H. Kamada, The 1st International Symposium on Nanovision Science, 2005/02
  152. Generation of Frequency-tunable THz Waves by using birefringent Crystal and Grating Pair, R. Yano; H. Gotoh; and T. Hattori, 14th International Conference on Ultrafast Phenomena, 2004/07
  153. Observation of InGaN Cavity Polaritons at Room Temperature, T. Tawara; H. Gotoh; T. Akasaka; N. Kobayashi; and T. Saitoh, International Quantum Electronics Conference (CLEO/IQEC2004), 2004/05
  154. Electromagnetically Induced Transparency-like Exciton Nonlinear Absorption in Quantum Dots, H. Gotoh; H. Kamada; T. Saitoh; H. Ando; and J. Temmyo, International Quantum Electronics Conference (CLEO/IQEC2004), 2004/05
  155. Low-threshold lasing of optically pumped InGaN vertical-cavity surface-emitting lasers with dielectric mirrors, T. Tawara; H. Gotoh; T. Akasaka; N. Kobayashi; and T. Saitoh, 5th Pacific Rim Conf. on Lasers and Electro-Optics(CLEO/Pacific Rim 2003), 2003/12
  156. Large piezoelectric effects on photoluminescence properties in 10 nm-thick InGaN Quantum wells, H. Gotoh; Y. Kobayashi; N. Kobayashi; T. Saitoh; and T. Tawara, 5th Pacific Rim Conf. on Lasers and Electro-Optics(CLEO/Pacific Rim 2003), 2003/12
  157. Spectral profile of THz electromagnetic waves emitted from photoconductive antenna studied by pump-probe THz wave emission spectroscopy, R. Yano; H. Gotoh; Y. Hirayama; and S. Miyashita, The 28th international conference on infrared and millimeter waves, 2003/09
  158. Spectral properties and structure dependence of detection efficiency of photoconductive antennas, R. Yano; Y. Hirayama; S. Miyashita; H. Gotoh; Y. Kadoya; K. Kusuda; and M. Yamanishi, The 10th International Workshop on Femtosecond Technology, 2003/07
  159. Exciton-Biexciton Coherent Coupling Effects on Exciton Absorption in Quantum Dots, H. Gotoh; H. Kamada; T. Saitoh; H. Ando; and J. Temmyo, Quantum Electronics and Laser Science Conference (CLEO/QELS2003), 2003/06
  160. Quantum dot exciton Rabi oscillation and quantum gate operation, H. Kamada; H. Gotoh; H. Ando; and T. Takagahara, 8th Int. Symp. on Advanced Physical Fields(APF8), 2003/01
  161. Quantum gate operation of exciton qubits in semiconductor quantum dots, H. Kamada; H. Gotoh; H. Ando; T. Takagahara and J. Temmyo, Photonics West 2003, 2003/01
  162. Single Quantum Dots Exciton : Application to Quantum Optics, H. Kamada; H. Gotoh; H. Ando; T. Takagahara and J. Temmyo, 2nd International Conference on Semiconductor Quantum Dots (QD2002), 2002/09
  163. Quantum Mechanical Time-Evolution of Exciton States in Semiconductor Quantum Dots : Quantum Gate Operation of Exciton Qubits, H. Kamada; H. Ando; T. Takagahara; H. Gotoh; and J. Temmyo, The 2002 International Conference on Solid State Devices and Materials (SSDM2002), 2002/09
  164. Quantum gate operation of quantum dot exciton, H. Kamada; H. Gotoh; H. Ando; and T. Takagahara, International symposium on quantum computing, 2002/07
  165. Quantum Mechanical Interference in Single Dot Exciton Driven by Number of Photons in Single Photon Regime, H. Kamada; H. Gotoh; H. Ando; and T. Takagahara, International Conference on Physics of Semiconductors (ICPS2002), 2002/07
  166. Excitation Intensity Dependence of THz Spectrum Emitted from InAs, R. Yano; Y. Hirayama; S. Miyashita; H. Gotoh; Y. Kadoya; K. Kusuda; and M. Yamanishi, The 9th Inernational Workshop on Femtosecond Technology, 2002/06
  167. Exciton Rabioscillation: Coherently Manipulate Zero-dimensional Quantum States by Light, H. Kamada; H. Gotoh; H. Ando; T. Takagahara; and J. Temmyo, Quantum Electronics and Laser Science Conference (CLEO/QELS2002), 2002/05
  168. Importance of Biexcitonic Scattering in Exciton Dephasing in Quantum Dots, H. Gotoh; H. Kamada; T. Saitoh; H. Ando; and J. Temmyo, Quantum Electronics and Laser Science Conference (CLEO/QELS2002), 2002/05
  169. Coherent optical control of single dot exciton wavefunction, H. Kamada; H. Gotoh; H. Ando; and T. Takagahara, The first International Workshop on Quantum Dots for Quantum Computing and Classical Size Effect Circuits (IWQDQC), 2002/01
  170. Exciton Rabi oscillation in a single self-organized InGaAs quantum dot, H. Kamada; H. Ando; T. Takagahara; H. Gotoh; and J. Temmyo, 7th International Conference of Optics and Excitons in Confined System (OECS7), 2001/09
  171. Exciton Rabi Oscillation in Single Quantum Dot: Temporal Measurement of Oscilation and Corresponding Energy Level Splitting, H. Kamada; H. Ando; T.Takagahara; H. Gotoh and J. Temmyo, The Pacific Rim Conference on Lasers and Electro-Optics (CLEO Pacific Rim 2001), 2001/07
  172. Lateral Electric-field Effects on Excitonic Optical Properties of InGaAs Quantum Disks, H. Gotoh; H. Kamada; H. Ando; and J. Temmyo, Fifth Optoelectronics and Communication Conference (OECC 2000), 2000/07
  173. Effect of Electron-Hole Interaction on Electron Spin Relaxation in GaAs/AlGaAs Quantum Wells, H. Gotoh; H. Ando; T. Sogawa; H. Kamada; T. Kagawa and H. Iwamura, The Pacific Rim Conference on Lasers and Electro-Optics (CLEO/Pacific Rim'99), 1999/09
  174. Photon-spin controlled lasing oscillation in GaAs VCSELs, H. Ando; T. Sogawa; and H. Gotoh, the 25th International Symposium on Compound Semiconductors, 1998/10
  175. Near-field optical nanoprobing of InGaAs/AlGaAs quantum dots, A. Chavez-Pirson; J. Temmyo; H. Kamada; H. Gotoh; and H. Ando, the 1998 International Symposium on Formation Physics and Device Application of Quantum Dot Structures (QDS '98), 1998/05
  176. Spin selective excitation of exciton and biexciton in zero dimensional InGaAs quantum disks, H. Kamada; H. Gotoh; H. Ando; and J. Temmyo, The 3rd Symposium on the physics and application of spin-related phenomena in semiconductors, 1997/11
  177. Extreamly long spin relaxation time in zero-dimensional InGaAs quantum disks, H. Gotoh; H. Kamada; A. Chavez-Pirson; H Ando; and J. Temmyo, Quantum Electronics and Laser Science Conference (CLEO/QELS '97), 1997/05
  178. Damage induced by a low-biased 92-MHz anode-coupled reactive ion etcher using chlorine-nitrogen mixed plasmas, T. Saitoh; H. Gotoh; T. Sogawa and H. Kanbe, Material Research Society (MRS) 1996 Fall Meeting, 1996/12
  179. Effects of dimensionality on radiative recombination lifetime of excitons in thin quantum boxes of intermediate regime between zero and two dimensions, H. Gotoh; H. Ando; and T. Takagahara, 1996 International Symposium on Formation Physics and Device Application of Quantum Dot Structures (QDS '96), 1996/11
  180. Optical nonlinearities in GaAs fractional-layer-superlattice quantum wires, A. Chavez-Pirson; H. Ando; H. Gotoh; H. Saito; N. Kobayashi; and H. Kanbe, Quantum Electronics and Laser Science Conference (QELS '96), 1996/06
  181. Enhancement of the excitonic effects in semiconductor thin quantum boxes with large lateral size, H. Gotoh; H. Ando; and H. Kanbe, 1995 International Conference on Solid State Devices and Materials (SSDM), 1995/08
  182. Excitonic optical properties in fractional-layer-superlattice wire structure: dimensional tunability from 2D to 1D, H. Ando; H. Saito; A. Chavez-Pirson; H. Gotoh; N. Kobayashi; and H. Kanbe, Conf. on Lasers and Electro-Optics/Pacific Rim '95, 1995/07