HIROAKI HANAFUSA

Last Updated :2021/04/06

Affiliations, Positions
Graduate School of Advanced Science and Engineering, Associate Professor
Web Site
E-mail
hanafushiroshima-u.ac.jp

Basic Information

Major Professional Backgrounds

  • 2011/04/01, 2012/02/29, Tokyo University of Agriculture and Technology, Assistant Professor (Special Appointment)
  • 2012/03/01, 2020/03/31, Hiroshima University, Graduate School of Advanced Sciences of Matter, Assistant Professor

Educational Backgrounds

  • Tokyo University of Agriculture and Technology, Graduate School, Division of Engineering, Japan, 2008/04, 2011/06

Academic Degrees

  • Doctor of Engineering, Tokyo University of Agriculture and Technology
  • Master of Engineering, Tokyo University of Agriculture and Technology

Educational Activity

  • 【Bachelor Degree Program】School of Engineering : Cluster 2(Electrical, Electronic and Systems Engineering)
  • 【Master's Program】Graduate School of Advanced Science and Engineering : Division of Advanced Science and Engineering : Quantum Matter Program
  • 【Doctoral Program】Graduate School of Advanced Science and Engineering : Division of Advanced Science and Engineering : Quantum Matter Program

In Charge of Primary Major Programs

  • Electronic Devices and Systems

Research Fields

  • Interdisciplinary science and engineering;Applied physics;Thin film / Surface and interfacial physical properties

Research Keywords

  • Semiconductor

Educational Activity

Course in Charge

  1. 2021, Undergraduate Education, 1Term, Exercise of Electromagnetism I
  2. 2021, Graduate Education (Master's Program) , First Semester, Seminar on Electronics A
  3. 2021, Graduate Education (Master's Program) , Second Semester, Seminar on Electronics B
  4. 2021, Graduate Education (Master's Program) , Academic Year, Academic Presentation in Electronics
  5. 2021, Graduate Education (Master's Program) , 1Term, Exercises in Electronics A
  6. 2021, Graduate Education (Master's Program) , 2Term, Exercises in Electronics A
  7. 2021, Graduate Education (Master's Program) , 3Term, Exercises in Electronics B
  8. 2021, Graduate Education (Master's Program) , 4Term, Exercises in Electronics B
  9. 2021, Graduate Education (Master's Program) , Academic Year, Advanced Study in Quantum Matter

Research Activities

Academic Papers

  1. Crystalline Ge Layer Growth on Si(001) by Sputter Epitaxy Method, Book of 1st Int. Workshop on Si based Nano-electronics and –photonics eds by S. Chiussi, P. Alpuim, J. Murota, P. González, J. Serra, and B. León, 137-138, 20090901
  2. Ge Flat Layer Growth on Heavily Phosphorus-Doped Si(001) by Sputter Epitaxy, Japanese Journal of Applied Physics, 51, 055502, 20120427
  3. SiGe Sputter Epitaxy Technique and Its Application to SiGe Devices, Procedia Engineering, 36, 396-403, 20120401
  4. Direct observation of grain growth from molten silicon formed by micro-thermal-plasma-jet irradiation, APPLIED PHYSICS LETTERS, 101(17), 20121022
  5. Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy, Applied Physics Express, 4(2), 25701-025701-3, 20110113
  6. High-efficiency impurity activation by precise control of cooling rate during atmospheric pressure thermal plasma jet annealing of 4H-SiC wafer, JAPANESE JOURNAL OF APPLIED PHYSICS, 54(6), 20150527
  7. Estimation of Phosphorus-implanted 4H-SiC Layer Recrystallization by EBSD Pattern Analysis, Mat. Sci. Forum, 821, 391-394, 20150630
  8. Pre-Amorphization and Low-Temperature Implantation for Efficient Activation of Implanted As in Ge(100), ECS Trans, 64(6), 423-429, 20141012
  9. Properties of Al Ohmic contacts to n-type 4H-SiC employing a Phosphorus-Doped and Crystallized Amorphous-Silicon Interlayer, Mater. Sci. Forum, 778-780, 649-652, 20140226
  10. Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers, Applied Physics Express, 4(2), 24102-024102-3, 20110127
  11. Strain-Relaxed Si1-xGex and Strained Si Grown by Sputter Epitaxy, Jpn J Appl Phys, 47(4), 3020-3023, 20080425
  12. Generation of ultra high-power thermal plasma jet and its application to crystallization of amorphous silicon films, JAPANESE JOURNAL OF APPLIED PHYSICS, 56(6), 20170516
  13. High-temperature and high-speed oxidation of 4H-SiC by atmospheric pressure thermal plasma jet, JAPANESE JOURNAL OF APPLIED PHYSICS, 56(4), 201705
  14. Extremely high-power-density atmospheric-pressure thermal plasma jet generated by the nitrogen-boosted effect, Japanese Journal of Applied Physics, 57, 06JH01-1-06JH01-40, 20180509

Invited Lecture, Oral Presentation, Poster Presentation

  1. Estimation of Phosphorus-implanted 4H-SiC Layer Activation by EBSD pattern analysis, H. Hanafusa, K. Maruyama, S. Hayashi, S. Higashi, 10th European Conference on Silicon Carbide and Related Materials (ECSCRM2014), 2014/09/21, Without Invitation, Japanese, Grenoble, France
  2. EBSD パターン明瞭度を用いたリン注入4H-SiC 層の結晶性評価, 花房宏明、丸山佳祐、林将平、東清一郎, 第75回 応用物理学会学術講演会, 2014/09/17, Without Invitation, Japanese, 北海道大学 札幌キャンパス
  3. 電子線後方散乱法を用いたリン注入4H-SiCの結晶性評価, 花房宏明、丸山圭祐、林将平、東清一郎, 平成26年度第4回半導体エレクトロニクス部門委員会 第1回講演会・見学会, 2015/01/24, Without Invitation, Japanese, 広島大学 東広島キャンパス
  4. Atmospheric Pressure Thermal-Plasma-Jet Oxidation of 4H-SiC, R. Ishimaru, H. Hanafusa, K. Maruyama, S. Higashi,, 68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing (ICRP-9/GEC-68/SPP-33), 2015/10, Without Invitation, English
  5. High Efficiency Activation of Phosphorus Atoms in 4HSiC by Atmospheric PressureThermal Plasma Jet Annealing, H. Hanafusa, K. Maruyama, R. Ishimaru, S. Higashi, 16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), 2015/10/04, Without Invitation, English
  6. Investigation on Crack Suppression Mechanism in Micro-Thermal-Plasma-Jet Crystallization of Amorphous Silicon Films on Flexible Glass Substrate, T. Hieda, H. Hanafusa, and S. Higashi, Int. Workshop Nanodevice Technologies 2017 (IWNT2017), 2017/03/02, Without Invitation, English, Higashi-Hiroshima, Japan
  7. Formation of Ohmic Contact for N-type 4H-SiC Layer by Silicon Cap Annealing, T. Taniguchi, H. Hanafusa, and S. Higashi, Int. Workshop Nanodevice Technologies 2017, 2017/03/02, Without Invitation, English
  8. Development of Self-Align Process Technique for 4H-SiC MOSFET with Thermal-Plasma-Jet Annealing, J. Inoue, H. Hanafusa, and S. Higashi, Int. Workshop Nanodevice Technologies 2017, Without Invitation, English
  9. Micro-thermal-plasma-jet Crystallization of Amorphous Silicon Films on Flexible Glass Substrate, T. Hieda, R. Shin, H. Hanafusa, S. Higashi, 34th Symposium on Plasma Processing (SPP34) / The 29th Symposium on Plasma Science for Materials, 2017/01/16, Without Invitation, English
  10. Generation of Ultra High Power Thermal Plasma Jet (Super TPJ) and Its Application to Crystallization of Amorphous Silicon Films, R. Nakashima, R. Shin, H. Hanafusa and S. Higashi, Int. Symp. Dry Process, 2016/11/21, Without Invitation, English
  11. Crystallization and Activationof P+ Dope a-Ge Film by Atmospheric Pressure Micro-Thermal-Plasma-Jet, H. Harada,, R. Shin, H. Hanafusa, S. Higashi, 2016 Int. Conf. Solid State Dev. Mat., 2016/09/26, Without Invitation, English
  12. High-temperature Oxidation of 4H-SiC by Thermal-Plasma-Jet, H. Hanafusa,, R. Ishimaru, S.Higashi, 11th European Conference on Silicon Carbide and Related Materials, 2016/09/25, Without Invitation, English
  13. Silicidation-Less Ohmic Contact Formation on N-Type 4H-SiC with Silicon Cap Annealing, H. Hanafusa, T. Taniguchi and S. Higashi, International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), 2017/09/17, Without Invitation, English
  14. Extremely High-power-density Atmospheric Pressure Thermal-Plasma-Jet Generated by Nitrogen-boost Effect, H. Hanafusa, W. Nakano, R. Nakashima and S. Higashi, Int. Symp. Dry Process (DPS2017), 2017/11/16, Without Invitation, English
  15. Activation of High-temperature-implanted Phosphorus Atoms in 4H-SiC by Atmospheric Pressure Thermal Plasma Jet Annealing, H. Hanafusa, S. Higashi, 2018 18th Int. Workshop Junction Tech. (IWJT-2018), 2018/03/08, With Invitation, English
  16. Millisecond Annealing of 4H-SiC Wafer for Impurity Activation by Nitrogen-boosted Atmospheric Pressure Thermal Plasma Jet, S. Kawasaki, H. Hanafusa, S. Higashi, European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), 2018/09/05, Without Invitation, English
  17. Investigation on Contact Property on Silicon-Cap-Annealed n-type 4H-SiC, D. Todo, H. Hanafusa, S. Higashi, European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), 2018/09/03, Without Invitation, English
  18. Ultra-High-Speed Crystallization of Amorphous Silicon Films on Flexible Glass Substrate by Thermal-PlasmaJet Irradiation Using Cylindrical Rotation Stage, W. Nakano, H. Hanafusa, S. Higashi, 2018 International Conference on Solid State Devices and Materials (SSDM 2018), 2018/09/10, Without Invitation, English
  19. Analysis of a Molten Region on Amorphous Silicon Film By High-Speed Camera and Contactless Temperature Measurement during Atmospheric Pressure Thermal Plasma Jet Annealing, Y. Mizukawa, H. Hanafusa, and S. Higashi, 2018 ECS and SMEQ Joint Int. Meeting, 2018/09/30, With Invitation, English
  20. Capless Annealing of Mg Implanted GaN (0001) Face Using Atmospheric Pressure Thermal Plasma Jet, H. Hanafusa, S. Higashi, and K. Shiozaki, International Workshop on Nitride Semiconductors (IWN2018), 2018/11/12, Without Invitation, English
  21. Visualization of Temperature Field in Molten Silicon Formed by Atmospheric Pressure Thermal Plasma Jet Irradiation, Y. Mizukawa, H. Hanafusa and S. Higashi, Int. Symp. Dry Process (DPS2018), 2018/11/14, Without Invitation, English
  22. Batteryless Operation of Single Crystalline Silicon CMOS Logic Circuits on a Flexible Substrate by Perovskite Photovoltaic Cells, S. Nagasawa, H. Hanafusa, S. Higashi, 15th Int. Thin-Film Transistor Conf. (ITC2019), 2019/03/01, Without Invitation, English
  23. Atmospheric Pressure Thermal Plasma Jet Oxidation for 4H-SiC, H. Hanafusa, Annual World Congress of Smart Materials-2019, 2019/03/08, Without Invitation, English